JPS59117258A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59117258A
JPS59117258A JP57226273A JP22627382A JPS59117258A JP S59117258 A JPS59117258 A JP S59117258A JP 57226273 A JP57226273 A JP 57226273A JP 22627382 A JP22627382 A JP 22627382A JP S59117258 A JPS59117258 A JP S59117258A
Authority
JP
Japan
Prior art keywords
insulating film
forming
conductor
region
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57226273A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0566027B2 (enExample
Inventor
Shinichiro Mitani
真一郎 三谷
Kiyoshi Honma
精 本間
Kanji Funaki
船木　莞治
Tadafumi Tamura
田村　忠文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Priority to JP57226273A priority Critical patent/JPS59117258A/ja
Publication of JPS59117258A publication Critical patent/JPS59117258A/ja
Publication of JPH0566027B2 publication Critical patent/JPH0566027B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP57226273A 1982-12-24 1982-12-24 半導体装置の製造方法 Granted JPS59117258A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57226273A JPS59117258A (ja) 1982-12-24 1982-12-24 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57226273A JPS59117258A (ja) 1982-12-24 1982-12-24 半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP1332730A Division JPH0612806B2 (ja) 1989-12-25 1989-12-25 半導体装置

Publications (2)

Publication Number Publication Date
JPS59117258A true JPS59117258A (ja) 1984-07-06
JPH0566027B2 JPH0566027B2 (enExample) 1993-09-20

Family

ID=16842617

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57226273A Granted JPS59117258A (ja) 1982-12-24 1982-12-24 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59117258A (enExample)

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031268A (ja) * 1983-07-29 1985-02-18 Nec Corp Ｍｉｓ型半導体記憶装置
JPS60220958A (ja) * 1984-04-17 1985-11-05 Mitsubishi Electric Corp 半導体集積回路装置
JPS6126253A (ja) * 1984-07-16 1986-02-05 Nippon Telegr & Teleph Corp <Ntt> 半導体記憶装置の製造方法
JPS6151868A (ja) * 1984-08-21 1986-03-14 Nec Corp 半導体装置
JPS6161293A (ja) * 1984-08-31 1986-03-29 Mitsubishi Electric Corp ダイナミツクメモリ装置
JPS6187359A (ja) * 1984-10-05 1986-05-02 Nec Corp 半導体メモリセル
JPS61144059A (ja) * 1984-12-18 1986-07-01 Toshiba Corp 半導体装置の製造方法
JPS61208256A (ja) * 1985-03-13 1986-09-16 Toshiba Corp 半導体記憶装置
JPS61239658A (ja) * 1985-04-16 1986-10-24 Toshiba Corp 半導体記憶装置
JPS6221266A (ja) * 1985-07-19 1987-01-29 Sanyo Electric Co Ltd 半導体メモリセル
JPS62140456A (ja) * 1985-12-16 1987-06-24 Toshiba Corp 半導体記憶装置
JPS62188264A (ja) * 1986-02-13 1987-08-17 Nec Corp 半導体装置
JPS62243358A (ja) * 1986-04-15 1987-10-23 Matsushita Electronics Corp 半導体メモリ装置
JPS62273764A (ja) * 1986-05-21 1987-11-27 Matsushita Electronics Corp 半導体メモリ装置
JPS6394669A (ja) * 1986-10-08 1988-04-25 Mitsubishi Electric Corp 半導体記憶装置
JPS63104466A (ja) * 1986-10-22 1988-05-09 Mitsubishi Electric Corp Ｍｏｓ型ダイナミツクｒａｍ
JPS63124453A (ja) * 1986-11-13 1988-05-27 Mitsubishi Electric Corp 半導体記憶装置
JPS63124454A (ja) * 1986-11-13 1988-05-27 Mitsubishi Electric Corp 半導体記憶装置
JPS6469048A (en) * 1987-09-10 1989-03-15 Toshiba Corp Dynamic memory cell and manufacture thereof
US4887136A (en) * 1986-10-20 1989-12-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device and the method for manufacturing the same
US4959698A (en) * 1986-10-08 1990-09-25 Mitsubishi Denki Kabushiki Kaisha Memory cell of a semiconductor memory device
JPH0691210B2 (ja) * 1984-11-30 1994-11-14 アメリカン テレフオン アンド テレグラフ カムパニ− Ｄｒａｍセル用高性能トレンチコンデンサ
US5545290A (en) * 1987-07-09 1996-08-13 Texas Instruments Incorporated Etching method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5349969A (en) * 1976-10-18 1978-05-06 Hitachi Ltd Semiconductor memory unit
JPS5632463U (enExample) * 1979-08-20 1981-03-30
JPS5643171U (enExample) * 1979-09-10 1981-04-20
JPS5643171A (en) * 1979-09-17 1981-04-21 Mitsubishi Electric Corp Informing device for platform of elevator
JPS5710973A (en) * 1980-06-24 1982-01-20 Agency Of Ind Science & Technol Semiconductor device
JPS592362A (ja) * 1982-06-28 1984-01-07 Nippon Telegr & Teleph Corp <Ntt> 半導体装置とその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5349969A (en) * 1976-10-18 1978-05-06 Hitachi Ltd Semiconductor memory unit
JPS5632463U (enExample) * 1979-08-20 1981-03-30
JPS5643171U (enExample) * 1979-09-10 1981-04-20
JPS5643171A (en) * 1979-09-17 1981-04-21 Mitsubishi Electric Corp Informing device for platform of elevator
JPS5710973A (en) * 1980-06-24 1982-01-20 Agency Of Ind Science & Technol Semiconductor device
JPS592362A (ja) * 1982-06-28 1984-01-07 Nippon Telegr & Teleph Corp <Ntt> 半導体装置とその製造方法

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031268A (ja) * 1983-07-29 1985-02-18 Nec Corp Ｍｉｓ型半導体記憶装置
JPS60220958A (ja) * 1984-04-17 1985-11-05 Mitsubishi Electric Corp 半導体集積回路装置
JPS6126253A (ja) * 1984-07-16 1986-02-05 Nippon Telegr & Teleph Corp <Ntt> 半導体記憶装置の製造方法
JPS6151868A (ja) * 1984-08-21 1986-03-14 Nec Corp 半導体装置
JPS6161293A (ja) * 1984-08-31 1986-03-29 Mitsubishi Electric Corp ダイナミツクメモリ装置
JPS6187359A (ja) * 1984-10-05 1986-05-02 Nec Corp 半導体メモリセル
JPH0691210B2 (ja) * 1984-11-30 1994-11-14 アメリカン テレフオン アンド テレグラフ カムパニ− Ｄｒａｍセル用高性能トレンチコンデンサ
JPS61144059A (ja) * 1984-12-18 1986-07-01 Toshiba Corp 半導体装置の製造方法
JPS61208256A (ja) * 1985-03-13 1986-09-16 Toshiba Corp 半導体記憶装置
JPS61239658A (ja) * 1985-04-16 1986-10-24 Toshiba Corp 半導体記憶装置
JPS6221266A (ja) * 1985-07-19 1987-01-29 Sanyo Electric Co Ltd 半導体メモリセル
JPS62140456A (ja) * 1985-12-16 1987-06-24 Toshiba Corp 半導体記憶装置
JPS62188264A (ja) * 1986-02-13 1987-08-17 Nec Corp 半導体装置
JPS62243358A (ja) * 1986-04-15 1987-10-23 Matsushita Electronics Corp 半導体メモリ装置
JPS62273764A (ja) * 1986-05-21 1987-11-27 Matsushita Electronics Corp 半導体メモリ装置
JPS6394669A (ja) * 1986-10-08 1988-04-25 Mitsubishi Electric Corp 半導体記憶装置
US4959698A (en) * 1986-10-08 1990-09-25 Mitsubishi Denki Kabushiki Kaisha Memory cell of a semiconductor memory device
US4887136A (en) * 1986-10-20 1989-12-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device and the method for manufacturing the same
JPS63104466A (ja) * 1986-10-22 1988-05-09 Mitsubishi Electric Corp Ｍｏｓ型ダイナミツクｒａｍ
JPS63124453A (ja) * 1986-11-13 1988-05-27 Mitsubishi Electric Corp 半導体記憶装置
JPS63124454A (ja) * 1986-11-13 1988-05-27 Mitsubishi Electric Corp 半導体記憶装置
US5545290A (en) * 1987-07-09 1996-08-13 Texas Instruments Incorporated Etching method
JPS6469048A (en) * 1987-09-10 1989-03-15 Toshiba Corp Dynamic memory cell and manufacture thereof

Also Published As

Publication number Publication date
JPH0566027B2 (enExample) 1993-09-20

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