JPH0447988B2 - - Google Patents

Info

Publication number
JPH0447988B2
JPH0447988B2 JP57117303A JP11730382A JPH0447988B2 JP H0447988 B2 JPH0447988 B2 JP H0447988B2 JP 57117303 A JP57117303 A JP 57117303A JP 11730382 A JP11730382 A JP 11730382A JP H0447988 B2 JPH0447988 B2 JP H0447988B2
Authority
JP
Japan
Prior art keywords
plane
effect transistor
field effect
channel
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57117303A
Other languages
English (en)
Japanese (ja)
Other versions
JPS598375A (ja
Inventor
Daisuke Ueda
Hiromitsu Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=14708408&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPH0447988(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP57117303A priority Critical patent/JPS598375A/ja
Priority to DE3324017A priority patent/DE3324017C2/de
Publication of JPS598375A publication Critical patent/JPS598375A/ja
Publication of JPH0447988B2 publication Critical patent/JPH0447988B2/ja
Priority to US07/982,068 priority patent/US5883411A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP57117303A 1982-07-05 1982-07-05 縦型構造電界効果トランジスタ Granted JPS598375A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP57117303A JPS598375A (ja) 1982-07-05 1982-07-05 縦型構造電界効果トランジスタ
DE3324017A DE3324017C2 (de) 1982-07-05 1983-07-04 Isolierschicht-Feldeffekt-Transistor
US07/982,068 US5883411A (en) 1982-07-05 1992-11-23 Vertical insulated gate FET

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57117303A JPS598375A (ja) 1982-07-05 1982-07-05 縦型構造電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS598375A JPS598375A (ja) 1984-01-17
JPH0447988B2 true JPH0447988B2 (en, 2012) 1992-08-05

Family

ID=14708408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57117303A Granted JPS598375A (ja) 1982-07-05 1982-07-05 縦型構造電界効果トランジスタ

Country Status (3)

Country Link
US (1) US5883411A (en, 2012)
JP (1) JPS598375A (en, 2012)
DE (1) DE3324017C2 (en, 2012)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61199666A (ja) * 1985-03-01 1986-09-04 Hitachi Cable Ltd 電界効果トランジスタ
JPS62115775A (ja) * 1985-11-15 1987-05-27 Nec Corp 半導体装置
DE69223128T2 (de) * 1991-07-26 1998-07-09 Denso Corp Verfahren zur herstellung vertikaler mosfets
US6603173B1 (en) 1991-07-26 2003-08-05 Denso Corporation Vertical type MOSFET
US6015737A (en) * 1991-07-26 2000-01-18 Denso Corporation Production method of a vertical type MOSFET
DE4342767A1 (de) * 1993-12-15 1995-06-22 Ant Nachrichtentech Verfahren zur Herstellung einer quaderförmigen Vertiefung zur Aufnahme eines Bauelementes in einer Trägerplatte
DE19611045C1 (de) * 1996-03-20 1997-05-22 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement
KR100304716B1 (ko) * 1997-09-10 2001-11-02 김덕중 모스컨트롤다이오드및그제조방법
DE19840032C1 (de) * 1998-09-02 1999-11-18 Siemens Ag Halbleiterbauelement und Herstellungsverfahren dazu
EP1151476B1 (en) 1999-11-11 2008-04-16 Nxp B.V. Semiconductor device having a field effect transistor and a method of manufacturing such a device
JP4363736B2 (ja) * 2000-03-01 2009-11-11 新電元工業株式会社 トランジスタ及びその製造方法
JP2003017698A (ja) * 2001-07-04 2003-01-17 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP4865166B2 (ja) * 2001-08-30 2012-02-01 新電元工業株式会社 トランジスタの製造方法、ダイオードの製造方法
DE10153315B4 (de) * 2001-10-29 2004-05-19 Infineon Technologies Ag Halbleiterbauelement
US6819089B2 (en) 2001-11-09 2004-11-16 Infineon Technologies Ag Power factor correction circuit with high-voltage semiconductor component
US6825514B2 (en) * 2001-11-09 2004-11-30 Infineon Technologies Ag High-voltage semiconductor component
EP1341238B1 (en) * 2002-02-20 2012-09-05 Shindengen Electric Manufacturing Co., Ltd. Diode device and transistor device
US6920267B2 (en) * 2002-05-13 2005-07-19 Alps Electric Co., Ltd Optical coupling device and manufacturing method thereof
US6841825B2 (en) * 2002-06-05 2005-01-11 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device
JP3971670B2 (ja) * 2002-06-28 2007-09-05 新電元工業株式会社 半導体装置
JP5299373B2 (ja) * 2003-01-16 2013-09-25 富士電機株式会社 半導体素子
CN100502036C (zh) * 2003-12-22 2009-06-17 松下电器产业株式会社 纵型栅极半导体装置及其制造方法
JP2006093430A (ja) * 2004-09-24 2006-04-06 Nec Electronics Corp 半導体装置
JP2007019191A (ja) * 2005-07-06 2007-01-25 Fujitsu Ltd 半導体装置とその製造方法
JP2012069960A (ja) * 2011-10-17 2012-04-05 Shindengen Electric Mfg Co Ltd エピタキシャルシリコン成長方法
WO2014059080A1 (en) 2012-10-12 2014-04-17 Texas State University-San Marcos A vertically movable gate field effect transistor (vmgfet) on a silicon-on-insulator (soi) wafer and method of forming a vmgfet
US8912066B2 (en) 2013-03-15 2014-12-16 Globalfoundries Singapore Pte. Ltd. Lateral double-diffused high voltage device
CN108122969A (zh) * 2017-12-18 2018-06-05 广东美的制冷设备有限公司 绝缘栅双极晶体管、ipm模块及空调器

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1248051A (en) * 1968-03-01 1971-09-29 Post Office Method of making insulated gate field effect transistors
US3785886A (en) * 1971-02-22 1974-01-15 Ibm Semiconductor device fabrication utilizing <100> oriented substrate material
US4243997A (en) * 1976-03-25 1981-01-06 Tokyo Shibaura Electric Co., Ltd. Semiconductor device
US4070690A (en) * 1976-08-17 1978-01-24 Westinghouse Electric Corporation VMOS transistor
US4084175A (en) * 1976-09-30 1978-04-11 Research Corporation Double implanted planar mos device with v-groove and process of manufacture thereof
US4278987A (en) * 1977-10-17 1981-07-14 Hitachi, Ltd. Junction isolated IC with thick EPI portion having sides at least 20 degrees from (110) orientations
US4131496A (en) * 1977-12-15 1978-12-26 Rca Corp. Method of making silicon on sapphire field effect transistors with specifically aligned gates
NL7905402A (nl) * 1978-10-05 1980-04-09 American Micro Syst U-mos halfgeleiderinrichting.
US4374455A (en) * 1979-10-30 1983-02-22 Rca Corporation Method for manufacturing a vertical, grooved MOSFET
US4577208A (en) * 1982-09-23 1986-03-18 Eaton Corporation Bidirectional power FET with integral avalanche protection

Also Published As

Publication number Publication date
DE3324017C2 (de) 1986-07-17
US5883411A (en) 1999-03-16
DE3324017A1 (de) 1984-01-05
JPS598375A (ja) 1984-01-17

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term