JPH04262890A - フラックス剤および金属粒子を有する接着剤 - Google Patents

フラックス剤および金属粒子を有する接着剤

Info

Publication number
JPH04262890A
JPH04262890A JP3274544A JP27454491A JPH04262890A JP H04262890 A JPH04262890 A JP H04262890A JP 3274544 A JP3274544 A JP 3274544A JP 27454491 A JP27454491 A JP 27454491A JP H04262890 A JPH04262890 A JP H04262890A
Authority
JP
Japan
Prior art keywords
adhesive
metal particles
substrate
electrical
fluxing agent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3274544A
Other languages
English (en)
Other versions
JP2807940B2 (ja
Inventor
Robert W Pennisi
ロバート・ダブリュ・ペニシ
Marc V Papageorge
マーク・ブイ・パパジョージ
Glenn F Urbish
グレン・エフ・アービッシュ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of JPH04262890A publication Critical patent/JPH04262890A/ja
Application granted granted Critical
Publication of JP2807940B2 publication Critical patent/JP2807940B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
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    • H01L23/49883—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing organic materials or pastes, e.g. for thick films
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】この発明は一般的には電子回路に
関し、かつより特定的には電気的相互接続方法に関し、
そしてさらに特定的には集積回路のフリップチップ取り
付けおよび封入に関する。
【０００２】
【従来の技術】人手によるワイヤボンディングの高価格
、信頼性のなさ、および低い生産性を除去するためには
んだバンプ（ｓｏｌｄｅｒ　　ｂｕｍｐ）相互接続が開
発された。フリップチップ集積回路のためのはんだバン
プ相互接続技術は何らかの形でおよそ２０年間使用され
てきている。初期の、複雑性の少ない集積回路は典型的
には周辺に接点部を有するのに対し、フリップチップバ
ンプ技術はそれが全範囲の領域のアレイに進むに応じて
相互接続密度のかなりの増大を許容した。制御された崩
壊（コプラス：ｃｏｌｌａｐｓｅ）チップ接続はダイ上
のウエット可能な金属端子に被着されたはんだバンプお
よび基板上のはんだによりウエット可能な端子の整合す
るフットプリントを利用する。上下逆の集積回路（フリ
ップチップ）が基板に整列されかつすべての接合がはん
だをリフローすることにより同時に行われる。制御され
たコラプス方法においては、はんだのバンプが集積回路
の端子上に被着される。正確に形成されたはんだバンプ
をダイ表面上に被着するための数多くの機構が長年にわ
たる非常な努力の課題であり、この問題に対する各々の
解決方法はかなり欠点を有している。最善の方法でさえ
もダイにかなりのコストおよび処理ステップを加える。
【０００３】はんだバンプは厚膜のガラスダムを使用す
ることにより端子上に流れ出すことが抑制されており、
基板の金属化部分の先端へのはんだの流れを制限する。 同様に、集積回路上のはんだの流れは集積回路上の化学
蒸着されたガラスのパッシベーションの表面被覆に露出
した金属上のはんだ可能なパッドの大きさにより制限さ
れる。
【０００４】はんだ合金の選択は融点に基づき規定され
る。鉛の多いはんだはその合金の高い融点のため集積回
路をアルミナセラミック基板に接合する場合に使用され
、組み立てられた回路のさらに他の処理を許容する。 エポキシまたはポリイミド回路板のような有機キャリア
への接合は低い融点のはんだ合金を必要とする。低温錫
／鉛はんだ（融点１８３℃）のようなはんだまたは鉛／
インジウムはんだ（融点２２０℃）のようなはんだが使
用されてきている。
【０００５】端子の冶金の選択は選択されるはんだに依
存する。銀および金はよくない選択であるが、それはこ
れらがはんだ中に急速に溶解するからである。従って、
銅、錫、鉛、パラジウム、プラチナ、またはニッケルが
一般に回路基板の端子として使用され、かつクロム、チ
タン、またはニッケル薄膜が一般に集積回路の端子に使
用される。
【０００６】集積回路を基板に接合するためには、フラ
ックス、水−ホワイトロジンまたは水溶性のフラックス
、が集積回路を定位置に保持するための一時的な接着剤
として基板上に付加される。該アセンブリはリフロー熱
サイクルにさらされ、オーブンまたは炉の中でダイを基
板に接合する。はんだの表面張力がダイを基板の端子に
自己整列することを助ける。リフローの後、フラックス
残留物がダイの腐食を防止するために除去されなければ
ならない。塩素を含む、フッ素を含むあるいは炭化水素
の溶剤がロジンを除去するために使用され、あるいは表
面活性剤の水溶液が水溶性のフラックスを除去するため
に使用される。ダイの基板への緊密な接近により（典型
的には、０．００１から０．００４インチ、すなわち０
．０２５４ミリメートルから０．１０２ミリメートル）
、ダイの下からフラックス残留物を除去することは高度
なクリーニング体制およびかなりの時間の消費を必要と
する困難な作業である。全てのフラックス残留物の完全
な除去を保証することが産業上の多くの努力の課題であ
った。
【０００７】クリーニングの後、アセンブリは電気的に
試験され、かつさらに環境的な保護を与えるためにパッ
ケージングが付加される。パッシベーション、封入、ま
たはカバーの付加が通常の方法である。封入の場合、液
体ポリマがダイの回りおよび下に付加される。歴史的に
は、ポリマの選択はシリコーン（ｓｉｌｉｃｏｎｅｓ）
およびエポキシであり、エポキシがより多く好まれてい
た。エポキシのセラミック基板への付着はシリコーンに
比べて優れている。エポキシの膨脹係数はセラミック充
填剤を添加することによって低くすることができる。こ
れは基板と封入材との間に生ずる熱的ストレスを低減す
る。低い膨脹係数を備えたエポキシの接着剤の重要性は
フリップチップのアプリケーションに対しては強調しす
ぎることはない。硬化したエポキシは堅くかつシリコー
ンの柔軟性を持たない。従って、もしそれらの膨脹係数
が充填剤によって低くならなければ、初期のデバイスの
故障がダイのクラックの形成から生じ得る。無機充填剤
の使用もまた熱伝導率およびイオンの汚染物質のレベル
に影響を与える。
【０００８】ダイおよび基板の間の非常に小さなギャッ
プは装置に対し最大の環境的保護を提供するためには完
全に満たされなければならない。デバイスを封入する過
去の努力は、米国特許第４，６０４，６４４号に述べら
れているように、ダイの中央部に欠如領域を残し、有機
レジンが該ダイの周辺に付加され、かつ前記空間に毛管
作用により引き入れられた。ダイの大きさが増大するに
応じて、毛管作用の制限された効力はより微妙なものと
なりかつダイのさらに大きな領域が保護されないままと
なった。
【０００９】
【発明が解決しようとする課題】ダイの表面を封入する
他の方法は上記制限を、ダイの中央に位置する、基板の
穴を通して有機レジンを付加することにより克服しよう
と試みた。はんだ付けおよびクリーニング操作の後、封
入樹脂がダイの表面の完全なカバレージを保証するため
に、前記穴に付加されかつダイの周辺回りにも付加され
た。この方法は前記穴のために使用されない空間を提供
するために、回路のない基板の領域を確保する必要性を
生ずる。
【００１０】明らかに、はんだバンプを除去し、ダイ表
面の完全な被覆を保証し、かつ基板の利用可能な領域の
最大の使用を許容するフリップチップ集積回路を封入す
る改良された方法が必要である。
【００１１】
【課題を解決するための手段および作用】要約すると、
本発明によれば、フラックス剤およびはんだの粒子を含
む接着材料が金属化パターンを有する基板かあるいは電
気的コンポーネントに付加される。該コンポーネントが
基板上に配置されかつ接着材料が加熱される。加熱段階
の間、フラックス剤がはんだ粒子の基板の金属化パター
ンおよびコンポーネントへの接着を促進し、かつ接着材
料が硬化（キュア）され、基板およびコンポーネントを
機械的に相互接続し、封入し、かつパッシベートする。
【００１２】
【実施例】図１を参照すると、電気的終端部１５０を有
する集積回路ダイ１３０がフラックス剤、硬化剤、およ
び金属粒子を含む接着材料１２０でコーティングされて
いる。接着材料はダイの表面にわたり一様に広がってお
り、電気的終端部およびダイの残りの部分の双方を覆っ
ている。図２を参照すると、接着材料２２０はフラック
ス剤（図示せず）、硬化剤（図示せず）、および金属粒
子２４０を含みそれにより接着材料が室温で直ちには硬
化しないように処方されている。適切な接着材料の例は
ビスフェノールＡおよびエピクロロヒドリンから作られ
たエポキシ樹脂である。そのようなエポキシ樹脂は、た
とえば、アメリカ合衆国、テキサス州、ヒューストンの
、Ｓｈｅｌｌ　　Ｃｈｅｍｉｃａｌ　　Ｃｏ．からＥｐ
ｏｎ　　８２５の取引名で、かつアメリカ合衆国、ミシ
ガン州、ミッドランドのダウケミカル社からＤＥＲ　　
３３２の取引名で商業的に入手可能である。硬化剤また
はハードナーはアミン、無水物、あるいは他の適切な反
応剤である。適切なハードナーを有するポリエステル樹
脂のような他の２材料型樹脂システムもまた互換性があ
る。フラックス剤の目的は金属粒子２４０に対するフラ
ックス作用を提供することである。アビエチン酸、アジ
ピン酸、アスコルビン酸、アクリル酸、クエン酸、２−
フロイック酸（２−ｆｕｒｏｉｃ　　ａｃｉｄ）、リン
ゴ酸、およびポリアクリル酸がフラックス剤として有用
であることが分かっている。一般式 で表される他の有機酸も有用であり、ここでＲは電子吸
引グループ（ｅｌｅｃｔｒｏｎ　　ｗｉｔｈｄｒａｗｉ
ｎｇ　　ｇｒｏｕｐ）である。特定の電子吸引グループ
はフッ素、塩素、臭素、ヨウ素、硫黄、ニトリル、水酸
基、ベンジルまたはいずれかの他の電子吸引グループで
ある。接着材料中に存在するフラックス剤の量は特定の
フラックス剤の活動、選択された金属合金、および基板
の金属化システムに応じて約０．１から約１６重量％の
範囲とすることができる。使用される金属粒子の量は接
着材料の約５０から約８５重量％に及ぶ。粒子の形状は
好ましくは球体であり、その大きさは直径で約１から約
２０ミクロンの範囲である。金属粒子として使用される
適切な金属は錫，鉛、インジウム、ビスマス、アンチモ
ン、銀、あるいはこれらの金属の合金である。
【００１３】デバイス２３０は電気的終端部２５０が基
板２００に面しかつ基板２００の金属化パターン２１０
と整列するように配置される。デバイス２３０は金属化
パターン２１０と緊密な接触に向けて動かされる。接着
剤２２０はデバイスの表面を環境的な汚染から保護する
ためにデバイス２３０と基板２００との間に連続的な封
入部を提供する。
【００１４】図面は集積回路デバイス２３０が基板に封
入されかつ接続されるものを示しているが、他のタイプ
の表面実装型コンポーネントを用いた実施例もまた本発
明の範囲内にある。
【００１５】アセンブリ２７０は接着剤を硬化させるた
めに加熱され、フラックス剤が活性化されかつ金属粒子
２４０および金属化表面２１０上の酸化物を低減し、金
属粒子の金属終端部２５０および基板の金属化部２１０
への合金化を許容する。加熱処理の間、接着剤は縮みか
つ基板−金属粒子−デバイス終端部のインタフェースに
圧力を及ぼす。接着システムの特定の化学に応じて、第
２のキュアリング後の操作が接着材料２２０を完全に硬
化させるために必要であるかもしれない。リフロー／キ
ュアリング段階の間に、デバイスは封入される。接着材
料２２０はデバイスの表面を環境的な汚染から保護する
ためにデバイス２３０と基板２００との間に連続的な封
入部を提供するから、これ以上のクリーニングまたは封
入操作は必要でない。
【００１６】以下に示す実例は発明の実施のモードを示
すものでありかつその請求の範囲を不当に制限すること
を意図するものではない。
【００１７】実例１ 次の処方に従ってフラックス剤およびハードナーを含む
接着材料が準備された。 　　　　成分　　　　　　　　　　　　　　　　　　　
　　　　　　　　　　　　　　　　　　　　　　　　　
　　　　　　　　重量％　　　　Ｆｕｒａｎｅ　　８９
３０３エポキシ、パートＡ　　　　　　　　　　　　　
　１７　　　　リンゴ酸　　　　　　　　　　　　　　
　　　　　　　　　　　　　　　　　　　　　　　　　
　　　　　　　　　　　６　　　　Ｆｕｒａｎｅ　　８
９３０３エポキシ、パートＢ　　　　　　　　　　　　
　　１７　　　　はんだ球、２００−３２５メッシュ　
　　　　　　　　　　　　　　　　　　　　　　　６０
Ｆｕｒａｎｅ　　８９３０３エポキシ、パートＡはアメ
リカ合衆国、カリホルニア州、ロサンゼルスのＦｕｒａ
ｎｅ　　Ｐｒｏｄｕｃｔｓ　　Ｃｏｍｐａｎｙから入手
可能なビスフェノールＡ−エピクロロヒドリン型エポキ
シ樹脂である。それは半導体デバイスを封入する用途の
ために処方されている。Ｆｕｒａｎｅ　　８９３０３エ
ポキシ、パートＢはこれもまたＦｕｒａｎｅ　　Ｐｒｏ
ｄｕｃｔｓ　　Ｃｏｍｐａｎｙから入手可能な無水物硬
化剤またはハードナーである。他のタイプの２材料型エ
ポキシまたはポリエステル樹脂もまた本発明の範囲内で
所望の結果を得るために使用できる。等価な材料はＨｙ
ｓｏｌ、Ａｍｉｃｏｎ、およびＲｅｉｃｈｈｏｌｄ　　
Ｃｈｅｍｉｃａｌのような会社から入手可能である。マ
リック酸およびエポキシのパートＡがアルミニウムの平
なべに加えられた。混合物は溶液がクリアになるまで、
かき混ぜながら約１５０℃まで加熱された。溶液は室温
まで冷却され、パートＢおよび低温はんだの球体（６３
％錫、３７％鉛）が平なべに加えられ、かつ混合物は一
様になるまでかき混ぜられた。混合物の一部が集積回路
の終端部に対応するはんだコートされた金属化パターン
を含むポリイミド回路板にコーティングされた。ポリイ
ミド板ははんだ球のリフローを保証するため１８５℃を
越える温度にまで加熱された。約３０秒後に、ポリイミ
ド回路板は熱源から外されかつ室温まで冷却された。ア
センブリははんだリフローおよび球体のポリイミド回路
板かつまた集積回路へのウエッティングを確認するため
に３０倍の顕微鏡のもとで調査された。
【００１８】実例２ ２０重量％のリンゴ酸のメタノール溶液が銅被覆された
金属化パターンを含むプリント回路板上にスプレーされ
、かつ乾燥された。プリント回路板は約１４５℃にまで
加熱されかつ支持されない接着剤のフィルムがプリント
回路板上に置かれ、金属化パターンを覆った。接着剤は
、はんだ球で満たされた、ビスフェノール−Ａおよびエ
ピクロロヒドリンから作られたエポキシフィルムであっ
た。該接着剤はＺ−ＬｉｎｋＲの商標名でＳｈｅｌｄａ
ｈｌ，Ｉｎｃ．によって販売されており、かつ米国特許
第４，７４７，９６８に記載されている。マリック酸の
溶液が接着剤上にスプレーされ、乾燥され、かつ集積回
路が接着剤上にフェースダウンで載置された。集積回路
の電気的終端部は回路板の金属化パターン上のパッドと
整列され、かつプリント回路板は約３０秒間１９０℃を
越える温度にまで加熱され、この間集積回路およびプリ
ント回路板アセンブリ上の圧力は約５０ｋｇ／ｃｍ２に
維持された。プリント回路板および集積回路が接合され
た後、アセンブリは熱源から取り除かれ、室温まで冷却
され、かつはんだリフローおよび球体のプリント回路板
および集積回路への冶金学的ウエッティングを確認する
ために３０倍の顕微鏡のもとで調査された。
【００１９】
【発明の効果】フラックス特性を有する異方的に伝導す
る接着剤が表面実装コンポーネント、かつ特にフリップ
チッフ集積回路をはんだリフローしかつ封入し、そして
パッシベートするために使用できることとなり、この場
合集積回路のアクティブ面の外部環境からの保護が維持
される。
【図面の簡単な説明】
【図１】本発明に関わる接着材料でコーティングされた
デバイスを示す平面図である。
【図２】本発明に従いデバイスを基板に取り付けた状態
を示す部分的正面図である。
【符号の説明】
１２０　　接着材料 １３０　　集積回路ダイ １５０　　電気的終端部 ２００　　基板 ２１０　　金属化パターン ２２０　　接着材料 ２３０　　デバイス ２４０　　金属粒子 ２５０　　電気的終端部 ２７０　　アセンブリ

Claims (11)

    【特許請求の範囲】
  1. 【請求項１】　　電気的コンポーネントおよび基板をは
    んだリフローしかつ相互接続する場合に使用するための
    フラックス剤および金属粒子を有する接着剤であって、
    熱硬化樹脂、フラックス剤、金属粒子、そして硬化剤を
    具備することを特徴とするフラックス剤および金属粒子
    を有する接着剤。
  2. 【請求項２】　　前記熱硬化樹脂はエポキシまたはポリ
    エステルであることを特徴とする請求項１に記載の接着
    剤。
  3. 【請求項３】　　前記フラックス剤は化学式を有する化
    合物を具備し、ここでＲはフッ素、塩素、臭素、ヨウ素
    、硫黄、水酸基、ニトリル、およびベンジルからなるグ
    ループから選択された電子吸引グループであることを特
    徴とする請求項１に記載の接着剤。
  4. 【請求項４】　　前記フラックス剤はリンゴ酸であるこ
    とを特徴とする請求項１に記載の接着剤。
  5. 【請求項５】　　接着剤中のフラックス剤の割合は接着
    剤の約０．１〜約１６重量％の範囲であることを特徴と
    する請求項１に記載の接着剤。
  6. 【請求項６】　　前記金属は鉛、錫、インジウム、ビス
    マス、アンチモン、銀、およびそれらの合金からなるグ
    ループから選択されたことを特徴とする請求項１に記載
    の接着剤。
  7. 【請求項７】　　前記金属粒子の割合は接着剤の５０重
    量％より大きく８５重量％より小さいことを特徴とする
    請求項１に記載の接着剤。
  8. 【請求項８】　　電気的コンポーネントのアセンブリで
    あって、複数の電気的終端部を有する電気的コンポーネ
    ント、前記電気的コンポーネントの終端部に対応する複
    数の電気的終端部を有するコンポーネント装着基板、前
    記電気的コンポーネントを前記基板に機械的に接続する
    ための接着材料であって、エポキシ樹脂、化学式を有す
    る化合物を具備するフラックス材であって、この場合Ｒ
    はフッ素、塩素、臭素、ヨウ素、硫黄、水酸基、ニトリ
    ル、およびベンジルからなるグループから選択された電
    子吸引グループであるもの、金属粒子、および硬化剤、
    を具備するもの、を具備し、前記接着材料は前記電気的
    コンポーネントおよび前記基板の間に配置されかつ両者
    を接合し、前記金属粒子はリフローされかつ前記電気的
    コンポーネントを前記基板に電気的に接続することを特
    徴とする電気的コンポーネントのアセンブリ。
  9. 【請求項９】　　前記化合物はリンゴ酸であることを特
    徴とする請求項８に記載の電気的コンポーネントのアセ
    ンブリ。
  10. 【請求項１０】　　前記金属粒子は大きさで１ミクロン
    より大きくかつ２０ミクロンより小さく、かつ前記方法
    は鉛、錫、インジウム、ビスマス、アンチモン、および
    銀からなるグループから選択されることを特徴とする請
    求項８に記載の電気的コンポーネントのアセンブリ。
  11. 【請求項１１】　　前記金属粒子ははんだの合金である
    ことを特徴とする請求項８に記載の電気的コンポーネン
    トのアセンブリ。
JP3274544A 1990-09-27 1991-09-26 フラックス剤および金属粒子を有する接着剤 Expired - Fee Related JP2807940B2 (ja)

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US07/588,889 US5136365A (en) 1990-09-27 1990-09-27 Anisotropic conductive adhesive and encapsulant material
US588,889 1990-09-27

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JPH04262890A true JPH04262890A (ja) 1992-09-18
JP2807940B2 JP2807940B2 (ja) 1998-10-08

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