JPH0415200B2 - - Google Patents

Info

Publication number
JPH0415200B2
JPH0415200B2 JP60256806A JP25680685A JPH0415200B2 JP H0415200 B2 JPH0415200 B2 JP H0415200B2 JP 60256806 A JP60256806 A JP 60256806A JP 25680685 A JP25680685 A JP 25680685A JP H0415200 B2 JPH0415200 B2 JP H0415200B2
Authority
JP
Japan
Prior art keywords
gan
sapphire substrate
grown
temperature
minutes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60256806A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62119196A (ja
Inventor
Isamu Akasaki
Nobuhiko Sawaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NAGOYA DAIGAKU GAKUCHO
Original Assignee
NAGOYA DAIGAKU GAKUCHO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NAGOYA DAIGAKU GAKUCHO filed Critical NAGOYA DAIGAKU GAKUCHO
Priority to JP60256806A priority Critical patent/JPS62119196A/ja
Publication of JPS62119196A publication Critical patent/JPS62119196A/ja
Priority to US07/272,081 priority patent/US4855249A/en
Publication of JPH0415200B2 publication Critical patent/JPH0415200B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/052—Light-emitting semiconductor devices having Schottky type light-emitting regions; Light emitting semiconductor devices having Metal-Insulator-Semiconductor type light-emitting regions
    • H10P14/24—
    • H10P14/2921—
    • H10P14/3416—
    • H10P14/3602—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/913—Graphoepitaxy or surface modification to enhance epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/025—Deposition multi-step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/11—Metal-organic CVD, ruehrwein type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator

Landscapes

  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP60256806A 1985-11-18 1985-11-18 化合物半導体の成長方法 Granted JPS62119196A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60256806A JPS62119196A (ja) 1985-11-18 1985-11-18 化合物半導体の成長方法
US07/272,081 US4855249A (en) 1985-11-18 1988-03-16 Process for growing III-V compound semiconductors on sapphire using a buffer layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60256806A JPS62119196A (ja) 1985-11-18 1985-11-18 化合物半導体の成長方法

Publications (2)

Publication Number Publication Date
JPS62119196A JPS62119196A (ja) 1987-05-30
JPH0415200B2 true JPH0415200B2 (enExample) 1992-03-17

Family

ID=17297695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60256806A Granted JPS62119196A (ja) 1985-11-18 1985-11-18 化合物半導体の成長方法

Country Status (2)

Country Link
US (1) US4855249A (enExample)
JP (1) JPS62119196A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
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US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
JP2021073702A (ja) * 2015-09-11 2021-05-13 国立大学法人三重大学 窒化物半導体基板

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US5218216A (en) * 1987-01-31 1993-06-08 Toyoda Gosei Co., Ltd. Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same
JP2753832B2 (ja) * 1988-03-30 1998-05-20 京セラ株式会社 第▲ｉｉｉ▼・ｖ族化合物半導体の気相成長法
JPH0240891A (ja) * 1988-07-29 1990-02-09 Toshiba Corp 薄膜型エレクトロルミネッセンス表示素子
JP2650744B2 (ja) * 1988-12-28 1997-09-03 シャープ株式会社 発光ダイオード
JP2704181B2 (ja) * 1989-02-13 1998-01-26 日本電信電話株式会社 化合物半導体単結晶薄膜の成長方法
JP2534743Y2 (ja) * 1989-09-05 1997-05-07 株式会社資生堂 中皿を交換自在としたコンパクト容器
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
DE69126152T2 (de) 1990-02-28 1997-11-13 Japan Res Dev Corp Lichtemittierende Halbleitervorrichtung mit Gallium-Nitrid-Verbindung
US5278433A (en) * 1990-02-28 1994-01-11 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US5164359A (en) * 1990-04-20 1992-11-17 Eaton Corporation Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate
JP3078821B2 (ja) * 1990-05-30 2000-08-21 豊田合成株式会社 半導体のドライエッチング方法
US5281830A (en) * 1990-10-27 1994-01-25 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
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US5290393A (en) * 1991-01-31 1994-03-01 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
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US5633192A (en) * 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
US6953703B2 (en) * 1991-03-18 2005-10-11 The Trustees Of Boston University Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen
US5192987A (en) * 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
US5270247A (en) * 1991-07-12 1993-12-14 Fujitsu Limited Atomic layer epitaxy of compound semiconductor
JP2666228B2 (ja) * 1991-10-30 1997-10-22 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子
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Cited By (4)

* Cited by examiner, † Cited by third party
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US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US7616672B2 (en) 1994-09-14 2009-11-10 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US8934513B2 (en) 1994-09-14 2015-01-13 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
JP2021073702A (ja) * 2015-09-11 2021-05-13 国立大学法人三重大学 窒化物半導体基板

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JPS62119196A (ja) 1987-05-30

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