JPS62119196A - 化合物半導体の成長方法 - Google Patents

化合物半導体の成長方法

Info

Publication number
JPS62119196A
JPS62119196A JP60256806A JP25680685A JPS62119196A JP S62119196 A JPS62119196 A JP S62119196A JP 60256806 A JP60256806 A JP 60256806A JP 25680685 A JP25680685 A JP 25680685A JP S62119196 A JPS62119196 A JP S62119196A
Authority
JP
Japan
Prior art keywords
gan
grown
sapphire substrate
temperature
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60256806A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0415200B2 (enExample
Inventor
Isamu Akasaki
勇 赤崎
Nobuhiko Sawaki
宣彦 澤木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nagoya University NUC
Original Assignee
Nagoya University NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nagoya University NUC filed Critical Nagoya University NUC
Priority to JP60256806A priority Critical patent/JPS62119196A/ja
Publication of JPS62119196A publication Critical patent/JPS62119196A/ja
Priority to US07/272,081 priority patent/US4855249A/en
Publication of JPH0415200B2 publication Critical patent/JPH0415200B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H01L21/02661—In-situ cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/052—Light-emitting semiconductor devices having Schottky type light-emitting regions; Light emitting semiconductor devices having Metal-Insulator-Semiconductor type light-emitting regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/913—Graphoepitaxy or surface modification to enhance epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/025—Deposition multi-step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/11—Metal-organic CVD, ruehrwein type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP60256806A 1985-11-18 1985-11-18 化合物半導体の成長方法 Granted JPS62119196A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60256806A JPS62119196A (ja) 1985-11-18 1985-11-18 化合物半導体の成長方法
US07/272,081 US4855249A (en) 1985-11-18 1988-03-16 Process for growing III-V compound semiconductors on sapphire using a buffer layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60256806A JPS62119196A (ja) 1985-11-18 1985-11-18 化合物半導体の成長方法

Publications (2)

Publication Number Publication Date
JPS62119196A true JPS62119196A (ja) 1987-05-30
JPH0415200B2 JPH0415200B2 (enExample) 1992-03-17

Family

ID=17297695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60256806A Granted JPS62119196A (ja) 1985-11-18 1985-11-18 化合物半導体の成長方法

Country Status (2)

Country Link
US (1) US4855249A (enExample)
JP (1) JPS62119196A (enExample)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01249695A (ja) * 1988-03-30 1989-10-04 Kyocera Corp 第３・ｖ族化合物半導体の気相成長法
US5006908A (en) * 1989-02-13 1991-04-09 Nippon Telegraph And Telephone Corporation Epitaxial Wurtzite growth structure for semiconductor light-emitting device
JPH0349010U (enExample) * 1989-09-05 1991-05-13
JPH05183189A (ja) * 1991-11-08 1993-07-23 Nichia Chem Ind Ltd ｐ型窒化ガリウム系化合物半導体の製造方法。
US5278433A (en) * 1990-02-28 1994-01-11 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer
US5281830A (en) * 1990-10-27 1994-01-25 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US5408120A (en) * 1992-07-23 1995-04-18 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
US5587014A (en) * 1993-12-22 1996-12-24 Sumitomo Chemical Company, Limited Method for manufacturing group III-V compound semiconductor crystals
US5733796A (en) * 1990-02-28 1998-03-31 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6593016B1 (en) 1999-06-30 2003-07-15 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and producing method thereof
KR100416738B1 (ko) * 1996-12-30 2004-04-21 삼성전기주식회사 기상결정성장법에의한ZnSe단결정제조장치
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US7183578B2 (en) 2003-03-26 2007-02-27 Kyocera Corporation Semiconductor apparatus, method for growing nitride semiconductor and method for producing semiconductor apparatus
US7196347B2 (en) 2003-08-06 2007-03-27 Rohm Co., Ltd. Semiconductor light emitting device
US7393213B2 (en) 2004-05-19 2008-07-01 Epivalley Co., Ltd. Method for material growth of GaN-based nitride layer
US7498244B2 (en) 2003-11-28 2009-03-03 Epivalley Co., Ltd. Method for fabricating GaN-based nitride layer

Families Citing this family (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5218216A (en) * 1987-01-31 1993-06-08 Toyoda Gosei Co., Ltd. Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same
JPH0240891A (ja) * 1988-07-29 1990-02-09 Toshiba Corp 薄膜型エレクトロルミネッセンス表示素子
JP2650744B2 (ja) * 1988-12-28 1997-09-03 シャープ株式会社 発光ダイオード
US5164359A (en) * 1990-04-20 1992-11-17 Eaton Corporation Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate
JP3078821B2 (ja) * 1990-05-30 2000-08-21 豊田合成株式会社 半導体のドライエッチング方法
JP3160914B2 (ja) * 1990-12-26 2001-04-25 豊田合成株式会社 窒化ガリウム系化合物半導体レーザダイオード
US5290393A (en) * 1991-01-31 1994-03-01 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
JP2786952B2 (ja) * 1991-02-27 1998-08-13 株式会社豊田中央研究所 窒化ガリウム系化合物半導体発光素子およびその製造方法
US6953703B2 (en) * 1991-03-18 2005-10-11 The Trustees Of Boston University Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen
WO1992016966A1 (en) * 1991-03-18 1992-10-01 Boston University A method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films
US5633192A (en) * 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
US5192987A (en) * 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
US5270247A (en) * 1991-07-12 1993-12-14 Fujitsu Limited Atomic layer epitaxy of compound semiconductor
JP2666228B2 (ja) * 1991-10-30 1997-10-22 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子
JP3352712B2 (ja) * 1991-12-18 2002-12-03 浩 天野 窒化ガリウム系半導体素子及びその製造方法
JP2657743B2 (ja) * 1992-10-29 1997-09-24 豊田合成株式会社 窒素−３族元素化合物半導体発光素子
US6083812A (en) * 1993-02-02 2000-07-04 Texas Instruments Incorporated Heteroepitaxy by large surface steps
DE69431333T2 (de) * 1993-10-08 2003-07-31 Mitsubishi Cable Industries, Ltd. GaN-Einkristall
US6440823B1 (en) 1994-01-27 2002-08-27 Advanced Technology Materials, Inc. Low defect density (Ga, Al, In)N and HVPE process for making same
US5679152A (en) * 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
JP3293035B2 (ja) * 1994-04-08 2002-06-17 株式会社ジャパンエナジー 窒化ガリウム系化合物半導体結晶の成長方法及び窒化ガリウム系化合物半導体装置
US5814533A (en) * 1994-08-09 1998-09-29 Rohm Co., Ltd. Semiconductor light emitting element and manufacturing method therefor
US5818078A (en) * 1994-08-29 1998-10-06 Fujitsu Limited Semiconductor device having a regrowth crystal region
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
JP3771952B2 (ja) * 1995-06-28 2006-05-10 ソニー株式会社 単結晶ｉｉｉ−ｖ族化合物半導体層の成長方法、発光素子の製造方法およびトランジスタの製造方法
US5677538A (en) * 1995-07-07 1997-10-14 Trustees Of Boston University Photodetectors using III-V nitrides
US5985687A (en) * 1996-04-12 1999-11-16 The Regents Of The University Of California Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials
US6266355B1 (en) 1997-09-12 2001-07-24 Sdl, Inc. Group III-V nitride laser devices with cladding layers to suppress defects such as cracking
US6086673A (en) * 1998-04-02 2000-07-11 Massachusetts Institute Of Technology Process for producing high-quality III-V nitride substrates
US6690700B2 (en) * 1998-10-16 2004-02-10 Agilent Technologies, Inc. Nitride semiconductor device
US6713789B1 (en) * 1999-03-31 2004-03-30 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method of producing the same
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US6531719B2 (en) 1999-09-29 2003-03-11 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device
KR100388011B1 (ko) * 2000-01-17 2003-06-18 삼성전기주식회사 ＧａＮ박막 ＳＡＷ필터 및 이를 제조하는 방법
US6392257B1 (en) 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
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US6501973B1 (en) 2000-06-30 2002-12-31 Motorola, Inc. Apparatus and method for measuring selected physical condition of an animate subject
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US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
US6504183B1 (en) 2000-09-08 2003-01-07 United Epitaxy Company Epitaxial growth of nitride semiconductor device
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US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
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KR100533636B1 (ko) * 2003-12-20 2005-12-06 삼성전기주식회사 질화물 반도체 제조방법 및 그에 따라 제조된 질화물반도체구조
FI20045482A0 (fi) 2004-12-14 2004-12-14 Optogan Oy Matalamman dislokaatiotiheyden omaava puolijohdesubstraatti, ja menetelmä sen valmistamiseksi
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