JPH0232791B2 - - Google Patents

Info

Publication number
JPH0232791B2
JPH0232791B2 JP54168529A JP16852979A JPH0232791B2 JP H0232791 B2 JPH0232791 B2 JP H0232791B2 JP 54168529 A JP54168529 A JP 54168529A JP 16852979 A JP16852979 A JP 16852979A JP H0232791 B2 JPH0232791 B2 JP H0232791B2
Authority
JP
Japan
Prior art keywords
film
type
field effect
effect transistor
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP54168529A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5691470A (en
Inventor
Yukimasa Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP16852979A priority Critical patent/JPS5691470A/ja
Publication of JPS5691470A publication Critical patent/JPS5691470A/ja
Priority to JP2055080A priority patent/JPH02263475A/ja
Publication of JPH0232791B2 publication Critical patent/JPH0232791B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components

Landscapes

  • Semiconductor Memories (AREA)
JP16852979A 1979-12-25 1979-12-25 Semiconductor Granted JPS5691470A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP16852979A JPS5691470A (en) 1979-12-25 1979-12-25 Semiconductor
JP2055080A JPH02263475A (ja) 1979-12-25 1990-03-08 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16852979A JPS5691470A (en) 1979-12-25 1979-12-25 Semiconductor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2055080A Division JPH02263475A (ja) 1979-12-25 1990-03-08 半導体装置

Publications (2)

Publication Number Publication Date
JPS5691470A JPS5691470A (en) 1981-07-24
JPH0232791B2 true JPH0232791B2 (forum.php) 1990-07-23

Family

ID=15869704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16852979A Granted JPS5691470A (en) 1979-12-25 1979-12-25 Semiconductor

Country Status (1)

Country Link
JP (1) JPS5691470A (forum.php)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02263475A (ja) * 1979-12-25 1990-10-26 Toshiba Corp 半導体装置
JPS5760868A (en) * 1980-09-29 1982-04-13 Seiko Epson Corp Cmos memory cell
JPH0815157B2 (ja) * 1984-07-27 1996-02-14 株式会社日立製作所 薄膜トランジスタの製造方法
JPS62131573A (ja) * 1985-12-04 1987-06-13 Hitachi Ltd 半導体装置
JPH07120805B2 (ja) * 1987-10-12 1995-12-20 日本電気株式会社 半導体装置およびその製造方法
JPH06101563B2 (ja) * 1988-07-19 1994-12-12 工業技術院長 薄膜電界効果トランジスタとその製造方法
JP2782333B2 (ja) * 1995-11-24 1998-07-30 セイコーエプソン株式会社 薄膜トランジスタの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5951146B2 (ja) * 1977-02-25 1984-12-12 沖電気工業株式会社 絶縁ゲ−ト型半導体集積回路の製造方法
JPS5457969A (en) * 1977-10-18 1979-05-10 Sony Corp Electric field effect transistor

Also Published As

Publication number Publication date
JPS5691470A (en) 1981-07-24

Similar Documents

Publication Publication Date Title
US4213139A (en) Double level polysilicon series transistor cell
US5298782A (en) Stacked CMOS SRAM cell with polysilicon transistor load
KR0161520B1 (ko) 반도체 기억장치
JPH0232791B2 (forum.php)
JPH05102432A (ja) スタテイツク半導体記憶装置及びその製造方法
JPS62174968A (ja) 半導体装置
JP2550119B2 (ja) 半導体記憶装置
JP2500924B2 (ja) 半導体装置
JPS58116760A (ja) 相補型ｍｏｓ半導体装置
JP2877069B2 (ja) スタティック型半導体メモリ装置
JP2956181B2 (ja) 抵抗素子を有する半導体装置
JPS63131565A (ja) 半導体装置
JPH1168091A (ja) クローズド・トランジスタ
JP2852046B2 (ja) 半導体装置
JPH02129960A (ja) 半導体メモリ
JPH02263475A (ja) 半導体装置
JPH0240951A (ja) 半導体メモリ装置
JPH065754B2 (ja) 半導体装置
JPH06112479A (ja) 多入力電界効果型トランジスタ
JPH06232372A (ja) 半導体記憶装置
JP2993041B2 (ja) 相補型ｍｏｓ半導体装置
JP2800206B2 (ja) 半導体記憶装置
JP2602125B2 (ja) 薄膜トランジスタの製造方法
KR0161418B1 (ko) Sram의 pmos 박막트랜지스터의 일정전원선과 금속배선을 전기적으로 연결하는 콘택 및 그것의 형성 방법
JPH01287960A (ja) メモリ装置