JPH02119148A - 半導体素子用ボンディングワイヤ - Google Patents

半導体素子用ボンディングワイヤ

Info

Publication number
JPH02119148A
JPH02119148A JP1112579A JP11257989A JPH02119148A JP H02119148 A JPH02119148 A JP H02119148A JP 1112579 A JP1112579 A JP 1112579A JP 11257989 A JP11257989 A JP 11257989A JP H02119148 A JPH02119148 A JP H02119148A
Authority
JP
Japan
Prior art keywords
wire
bonding wire
bonding
strength
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1112579A
Other languages
English (en)
Other versions
JP2745065B2 (ja
Inventor
Takahide Ono
恭秀 大野
Yoshio Ozeki
大関　芳雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Publication of JPH02119148A publication Critical patent/JPH02119148A/ja
Application granted granted Critical
Publication of JP2745065B2 publication Critical patent/JP2745065B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026—Alloys based on copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23B—TURNING; BORING
    • B23B5/00—Turning-machines or devices specially adapted for particular work; Accessories specially adapted therefor
    • B23B5/08—Turning-machines or devices specially adapted for particular work; Accessories specially adapted therefor for turning axles, bars, rods, tubes, rolls, i.e. shaft-turning lathes, roll lathes; Centreless turning
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は半導体素子の電極と外部リードを接続するため
に使用するボンディングワイヤに関するものである。
（従来の技術） 従来、半導体素子の電極を外部ＩＪ　−トに接続するた
めに、Ａｕに微量のＣａ、　Ｂｅ、　Ｇｅなどを含有さ
せた＾Ｕ合金の線径２５〜５０μｍのワイヤ、すなわち
ボンディングワイヤが用いられている。
このワイヤを用いて半導体素子とリードフレームを接続
する際に、両者とも超音波による圧接か、半導体素子の
電極については、アークで先端をボールアップした後熱
圧着する方法がとられている。
しかしながら、近年ＩＣのより一層の小型化、集積化が
おこなわれ、電極数の増加のため、現状ワイヤ径では、
電極の占める面積が大きくなりすぎることが問題視され
るようになってきた。この問題を解決するためには、ワ
イヤ径を細くすることが必要であるが、現状のワイヤを
細くしたのでは、配線時及び使用中の断線の割合が高く
実用に供しえない。
そのため現状ワイヤでは、ボンディングワイヤの特性と
しては線径２０ａｏ程度が限界であるとされていた。
特開昭５６−４９５３４号公報および特開昭５６−４９
５３５号公報ではｐｔを３０−ｔ％まで、あるいはＰｄ
を４０−ｔ％までＡｕに加えることによりワイヤの高強
度化をはかり、細線化を可能にするという提案もあるが
、合金元素の含有量がある限界を越えると接合時に形成
するボールの硬さが増し、熱圧着に必要な荷重が大きく
なり、ＩＣのシリコンチップに損傷を与える等の問題が
起きる。特開昭６０−１５９５８号公報では、Ｍに異種
元素を混入した電極配線に対して良好な熱圧着性を有す
るボンディングワイヤとして、Ａｕ基の合金ワイヤが提
案されているが、これも同様の問題があり、従来から採
用されているｒｃ、及□び接合方法を特別に変更するこ
となく、ＩＣの小型化、高密度化がはかれる新しいボン
ディングワイヤが求められている。
（発明が解決しようとする課題） そこで、本発明では、ボンディングワイヤの線径をこれ
までよりも細くしても従来のワイヤと同じ信頼性を持っ
たワイヤを提供することを目的とする。また、本発明の
他の目的としては、製造時においても強度がつよくて極
細線にすることが可能で、接合時の破断強度に優れた断
線の極めて少ない半導体素子用ボンディングワイヤを提
供しようとするものである。
（課題を解決するための手段） 本発明の要旨は下記のとおりである。
（１）　　Ｃｕを１〜５ｗｔ％未満含有し、残部はＡｕ
からなる半導体素子用ボンディングワイヤ。
（２）　　Ｃｕを１〜５ｗｔ％未満と、Ｃａ＋　Ｇｅ＋
　Ｂｅ、　Ｌａ。
Ｉｎの１種または２種以上を合計で０．０００３〜０．
０１ｗｔ％含有し、残部はＡｕからなる半導体素子用ボ
ンディングワイヤ。
（３）　　Ｃｕを１〜５ｗｔ％未満と、ｐｔを１〜５ｗ
ｔ％未満含有し、残部はＡｕからなる半導体素子用ボン
ディングワイヤ。
（４）　　Ｃｕを１〜５ｗｔ％未満と、ｐｔを１〜５ｗ
ｔ％未満と、Ｃａ、　Ｇｅ、　Ｂｅ、　Ｌａ＋　Ｉｎの
１種または２種以上を合計で０．０００３〜０．０１ｗ
ｔ％含有し、残部はＡｕからなる半導体素子用ボンディ
ングワイヤ。
本発明の半導体素子用ボンディングワイヤにおいて、Ａ
ｕにＣｕを１〜５ｗｔ％未満含有させた理由は、Ｃｕが
Ａｕに完全に固溶することにより、母線の強度が向上す
るばかりか接合強度も高くなるからで、これまでのワイ
ヤではなかなか難しかった線径２０μｍ以下の細線にし
才も、Ｃｕが１％以上含有されていれば、破断強度４ｇ
ｒ以上を満足することが出来る。この特徴は、Ｃｕの含
有量の増加とともに強度の上昇が認められるが、５％を
越えると耐食性に問題を生じ、長時間を経た後での信頼
性を損なう。また、Ｃｕの含有量が５％に達すると接合
時に形成するボールの硬さが増加し、熱圧着に必要な荷
重が大きくなることからシリコンチップに損傷を与える
ためである。
なお、原料となるＡｕ、　Ｃｕは不純物の含有量が多い
と製品の特性が不安定となることと、細線化や接合時に
破断の原因となるので、９９．９％以上の高純度とする
ことが好ましい。
Ｃｕの含有によってこのような効果が得られるのは、固
溶体強化と規則格子の生成によっていると推察される。
なお、ｐｔは、この効果を助長する働きをする。その含
有量は、１〜５ｗｔ％未満の範囲で、それ未満では効果
がなく、上限を越えると延性の減少やボールの硬さの増
加という不都合が生ずる。
伸線時に導入された加工歪を除き、適度な延性と十分な
強度を保持するために、２００〜６００°Ｃの温度と適
切な時間の熱処理を行うことが望ましい。
伸線ままの細線は延性（伸び）がなく、また加工歪のた
めカールが強く、使用に供せないことがあるので通常は
焼なまし熱処理を行う。熱処理の温度が高いほど、長時
間であるほど強度が低下し、延性が大きくなるのが一般
的であるが、その程度は合金成分の含有量によって異な
るので、線径と成分に応じた熱処理条件を選ぶ必要があ
る。また、この熱処理によって組織の再結晶、粒成長が
進行するが、結晶粒径が線径に近づくと、強度、延性と
も著しく低下するため、熱処理条件の選定は細径ワイヤ
の場合は特に重要である。
第１図は、Ｃｕを含有した線径１０ＩＩｍのワイヤで４
ｇｒ以上の破断強度を確保する熱処理条件を示したグラ
フである。実線は４００°Ｃ１破線は２００°Ｃで処理
した場合を示している。
また、特に、従来の金ボンディングワイヤの添加にも用
いられているＣａ、　Ｂｅ、　Ｇｅ、　Ｌａ、　Ｉｎの
添加は、本発明のボンディングワイヤの接合強度を向上
させる。この目的のために、これらの元素の１種または
２種以上を合計で０．０００３〜０．０１ｗｔ％の範囲
で添加することができる。
本発明のボンディングワイヤは、真空溶解炉等を用いて
本発明にしたがった化学成分のＡｕ合金を溶解し鋳造し
た後、線引、熱処理等を行って所望の細径のワイヤに製
造される。
（実施例） つぎに、本発明の効果を明瞭にする実施例を説明する。
純度９９．９９％の高純度Ａｕと純度９９．９％の高純
度Ｃｕを用い、第１表のような元素を添加した材料を真
空溶解炉で溶製し、線引、熱処理をおこなった。
線径は、１０μｍ、一部は、１２μｍ、１５μｍ、１９
ｕｒｎ、　　２５Ｉ１ｍ、　　３０ｐｍである。
引っ張り試験はゲージ長１００ｍｍの試験片を用いた。
接合強度は第２図に示すようにＳｉチップｌとリードフ
レーム２に接合したボンディングワイヤ３を図に示すよ
うに矢印方向に引っ張り、そのときの破断強度を測定し
た。ワイヤの破断荷重、伸びと接合後の破断強度を比較
材と対比して第１表に示す。
第１表から明らかなように、本発明ワイヤは、細径にも
かかわらす破断強度及び接合強度が優れていることがわ
かる。また、従来のボンディングワイヤと同様の線径で
使用すれば、より強度の高いワイヤが得られる。
（発明の効果） 以上説明したように、本発明ワイヤは、破断強度及び接
合強度に優れ、特に、従来のワイヤに対して、１０μｍ
のような細径にしても従来のワイヤ以上に信顛性の高い
ワイヤとして高集積化したＬＳＩの小型化に役立つもの
である。
【図面の簡単な説明】
第１図は、Ｃｕを含有した線径１０μｍのワイヤで４ｇ
ｒ以上の破断強度を確保する熱処理条件を示したグラフ
である。実線は４００°Ｃ１破線は２００°Ｃで処理し
た場合を示している。 第２図は、接合強度測定法の説明図である。 １＋Ｓｉチツプ、２；リードフレーム、３；ポンディン
グワイヤ、↑；引っ張り方向

Claims (7)

    【特許請求の範囲】
  1. （１）Ｃｕを１〜５ｗｔ％未満含有し、残部はＡｕから
    なる半導体素子用ボンディングワイヤ。
  2. （２）Ｃｕを１〜５ｗｔ％未満と、Ｃａ、Ｇｅ、Ｂｅ、
    Ｌａ、Ｉｎの１種または２種以上を合計で０．０００３
    〜０．０１ｗｔ％含有し、残部はＡｕからなる半導体素
    子用ボンディングワイヤ。
  3. （３）Ｃｕを１〜５ｗｔ％未満と、ｐｔを１〜５ｗｔ％
    未満含有し、残部はＡｕからなる半導体素子用ボンディ
    ングワイヤ。
  4. （４）Ｃｕを１〜５ｗｔ％未満と、ｐｔを１〜５ｗｔ％
    未満と、Ｃａ、Ｇｅ、Ｂｅ、Ｌａ、Ｉｎの１種または２
    種以上を合計で０．０００３〜０．０１ｗｔ％含有し、
    残部はＡｕからなる半導体素子用ボンディングワイヤ。
  5. （５）線径が２０μｍ以下である請求項１〜４のいずれ
    かに記載の半導体素子用ボンディングワイヤ。
  6. （６）破断強さが４ｇｒ以上である請求項１〜４のいず
    れかに記載の半導体素子用ボンディングワイヤ。
  7. （７）線径が１５μｍ以下で破断強さが４ｇｒ以上であ
    る請求項１〜４のいずれかに記載の半導体素子用ボンデ
    ィングワイヤ。
JP1112579A 1988-05-02 1989-05-01 半導体素子用ボンディングワイヤ Expired - Fee Related JP2745065B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10958788 1988-05-02
JP63-109587 1988-05-02

Publications (2)

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JPH02119148A true JPH02119148A (ja) 1990-05-07
JP2745065B2 JP2745065B2 (ja) 1998-04-28

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JP (1) JP2745065B2 (ja)
KR (1) KR930001265B1 (ja)
DE (1) DE3990432C1 (ja)
GB (1) GB2229859B (ja)
WO (1) WO1989011161A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6011305A (en) * 1997-02-21 2000-01-04 Nec Corporation Semiconductor device having metal alloy for electrodes
US6080492A (en) * 1997-07-01 2000-06-27 Nippon Steel Corporation Gold alloy thin wire for semiconductor devices

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19740004A1 (de) * 1997-09-11 1998-11-19 Siemens Ag Bonddraht
DE19753055B4 (de) * 1997-11-29 2005-09-15 W.C. Heraeus Gmbh Feinstdraht aus einer Gold-Legierung, Verfahren zu seiner Herstellung und seine Verwendung

Citations (2)

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JPS5649534A (en) * 1979-09-28 1981-05-06 Tanaka Kikinzoku Kogyo Kk Bonding wire for semiconductor device
JPS5676556A (en) * 1979-11-28 1981-06-24 Tanaka Denshi Kogyo Kk Bonding gold wire for semiconductor element

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US3769006A (en) * 1972-01-27 1973-10-30 Gold Refining W Co Bright cast alloy, and composition
JPS53112060A (en) * 1977-03-11 1978-09-30 Tanaka Electronics Ind Gold wire for bonding semiconductor
JPS55127041A (en) * 1979-03-26 1980-10-01 Hitachi Ltd Resin-sealed semiconductor device
DE3153395C2 (en) * 1981-02-12 1987-11-19 W.C. Heraeus Gmbh, 6450 Hanau, De Use of a very fine wire made of a copper/tin alloy
DD201156A1 (de) * 1981-10-02 1983-07-06 Daut Hans Heiner Edelmetallegierungen fuer mikrodrahtwerkstoffe
US4490504A (en) * 1983-08-15 1984-12-25 General Electric Company Flame retardant non-dripping polycarbonate compositions
JPS6049534A (ja) * 1983-08-26 1985-03-18 三菱電機株式会社 回路しや断器
EP0288776A3 (en) * 1987-04-28 1989-03-22 Texas Instruments Incorporated Gold alloy wire connection to copper doped aluminum semiconductor circuit interconnection bonding pad
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Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JPS5649534A (en) * 1979-09-28 1981-05-06 Tanaka Kikinzoku Kogyo Kk Bonding wire for semiconductor device
JPS5676556A (en) * 1979-11-28 1981-06-24 Tanaka Denshi Kogyo Kk Bonding gold wire for semiconductor element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6011305A (en) * 1997-02-21 2000-01-04 Nec Corporation Semiconductor device having metal alloy for electrodes
US6080492A (en) * 1997-07-01 2000-06-27 Nippon Steel Corporation Gold alloy thin wire for semiconductor devices

Also Published As

Publication number Publication date
JP2745065B2 (ja) 1998-04-28
KR900700217A (ko) 1990-08-11
KR930001265B1 (ko) 1993-02-22
GB2229859A (en) 1990-10-03
DE3990432C1 (de) 1994-06-23
GB8928848D0 (en) 1990-06-13
GB2229859B (en) 1993-01-06
WO1989011161A1 (en) 1989-11-16

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