JP7455951B2 - チップパッケージ構造、およびチップパッケージ構造の製造方法 - Google Patents
チップパッケージ構造、およびチップパッケージ構造の製造方法 Download PDFInfo
- Publication number
- JP7455951B2 JP7455951B2 JP2022502145A JP2022502145A JP7455951B2 JP 7455951 B2 JP7455951 B2 JP 7455951B2 JP 2022502145 A JP2022502145 A JP 2022502145A JP 2022502145 A JP2022502145 A JP 2022502145A JP 7455951 B2 JP7455951 B2 JP 7455951B2
- Authority
- JP
- Japan
- Prior art keywords
- chips
- layer
- package structure
- vertical conductive
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W42/00—Arrangements for protection of devices
- H10W42/121—Arrangements for protection of devices protecting against mechanical damage
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/0698—Local interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
- H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
- H10W70/09—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
- H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
- H10W70/614—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together the multiple chips being integrally enclosed
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/63—Vias, e.g. via plugs
- H10W70/635—Through-vias
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
- H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
- H10W74/121—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
- H10W74/129—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed forming a chip-scale package [CSP]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7424—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self-supporting substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7436—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to support a device or a wafer when forming electrical connections thereto
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/099—Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
- H10W70/652—Cross-sectional shapes
- H10W70/6528—Cross-sectional shapes of the portions that connect to chips, wafers or package parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/0198—Manufacture or treatment batch processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/823—Interconnections through encapsulations, e.g. pillars through molded resin on a lateral side a chip
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/853—On the same surface
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/9413—Dispositions of bond pads on encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
- H10W74/014—Manufacture or treatment using batch processing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
- H10W74/019—Manufacture or treatment using temporary auxiliary substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
- H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
- H10W74/117—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
- H10W74/142—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations exposing the passive side of the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/20—Configurations of stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/20—Configurations of stacked chips
- H10W90/24—Configurations of stacked chips at least one of the stacked chips being laterally offset from a neighbouring stacked chip, e.g. chip stacks having a staircase shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/752—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between stacked chips
Landscapes
- Engineering & Computer Science (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Manufacturing & Machinery (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023210084A JP7723065B2 (ja) | 2019-11-29 | 2023-12-13 | チップパッケージ構造、およびチップパッケージ構造の製造方法 |
| JP2025126408A JP2025166004A (ja) | 2019-11-29 | 2025-07-29 | チップパッケージ構造、およびチップパッケージ構造の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/121821 WO2021102876A1 (en) | 2019-11-29 | 2019-11-29 | Chip package structure and manufacturing method thereof |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023210084A Division JP7723065B2 (ja) | 2019-11-29 | 2023-12-13 | チップパッケージ構造、およびチップパッケージ構造の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2022540260A JP2022540260A (ja) | 2022-09-14 |
| JP7455951B2 true JP7455951B2 (ja) | 2024-03-26 |
Family
ID=70306487
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022502145A Active JP7455951B2 (ja) | 2019-11-29 | 2019-11-29 | チップパッケージ構造、およびチップパッケージ構造の製造方法 |
| JP2023210084A Active JP7723065B2 (ja) | 2019-11-29 | 2023-12-13 | チップパッケージ構造、およびチップパッケージ構造の製造方法 |
| JP2025126408A Pending JP2025166004A (ja) | 2019-11-29 | 2025-07-29 | チップパッケージ構造、およびチップパッケージ構造の製造方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023210084A Active JP7723065B2 (ja) | 2019-11-29 | 2023-12-13 | チップパッケージ構造、およびチップパッケージ構造の製造方法 |
| JP2025126408A Pending JP2025166004A (ja) | 2019-11-29 | 2025-07-29 | チップパッケージ構造、およびチップパッケージ構造の製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US11133290B2 (https=) |
| JP (3) | JP7455951B2 (https=) |
| KR (3) | KR102902502B1 (https=) |
| CN (2) | CN113964102A (https=) |
| TW (1) | TWI752402B (https=) |
| WO (1) | WO2021102876A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20240332152A1 (en) * | 2023-04-03 | 2024-10-03 | Yangtze Memory Technologies Co., Ltd. | Integrated package device, fabrication method thereof and memory system |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11469215B2 (en) * | 2016-07-13 | 2022-10-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chip package structure with molding layer and method for forming the same |
| DE112016007295T5 (de) * | 2016-10-01 | 2019-06-19 | Intel Corporation | Elektronisches bauelementgehäuse |
| US11735570B2 (en) * | 2018-04-04 | 2023-08-22 | Intel Corporation | Fan out packaging pop mechanical attach method |
| JP2022002249A (ja) * | 2020-06-19 | 2022-01-06 | キオクシア株式会社 | 半導体装置およびその製造方法 |
| KR102904560B1 (ko) * | 2020-08-19 | 2025-12-26 | 에스케이하이닉스 주식회사 | 수직 인터커넥터를 포함하는 반도체 패키지 |
| US11289130B2 (en) * | 2020-08-20 | 2022-03-29 | Macronix International Co., Ltd. | Memory device |
| CN112614830A (zh) * | 2020-11-30 | 2021-04-06 | 华为技术有限公司 | 一种封装模组及电子设备 |
| JP2022098115A (ja) * | 2020-12-21 | 2022-07-01 | キオクシア株式会社 | 半導体装置およびその製造方法 |
| US12266636B2 (en) | 2020-12-23 | 2025-04-01 | Stmicroelectronics Pte Ltd | Stacked die package including a multi-contact interconnect |
| CN114715834B (zh) * | 2021-01-05 | 2025-04-08 | 华邦电子股份有限公司 | 封装结构及其制造方法 |
| KR102920160B1 (ko) * | 2021-01-20 | 2026-02-02 | 에스케이하이닉스 주식회사 | 수직 인터커넥터를 포함하는 반도체 패키지 |
| JP2022112923A (ja) * | 2021-01-22 | 2022-08-03 | キオクシア株式会社 | 半導体装置およびその製造方法 |
| CN118366875A (zh) * | 2021-01-26 | 2024-07-19 | 长江存储科技有限责任公司 | 基板结构及其制造和封装方法 |
| CN113380762B (zh) * | 2021-06-04 | 2022-08-30 | 长江存储科技有限责任公司 | 芯片封装结构及其制造方法 |
| US11908838B2 (en) * | 2021-08-26 | 2024-02-20 | Taiwan Semiconductor Manufacturing Company Limited | Three-dimensional device structure including embedded integrated passive device and methods of making the same |
| KR20230033362A (ko) | 2021-09-01 | 2023-03-08 | 삼성전자주식회사 | 반도체 패키지 및 그의 제조 방법 |
| CN121510594A (zh) * | 2021-12-28 | 2026-02-10 | 长江存储科技有限责任公司 | 存储器系统封装结构及制造方法 |
| EP4437588A4 (en) * | 2021-12-28 | 2025-08-27 | Yangtze Memory Tech Co Ltd | MEMORY SYSTEM PACKAGING STRUCTURE AND FORMING METHOD THEREOF |
| KR20230164794A (ko) | 2022-05-25 | 2023-12-05 | 삼성전자주식회사 | 반도체 패키지 |
| KR20230172743A (ko) * | 2022-06-16 | 2023-12-26 | 삼성전자주식회사 | 반도체 패키지 및 반도체 패키지의 제조 방법 |
| KR20240062200A (ko) * | 2022-10-28 | 2024-05-09 | 삼성전자주식회사 | 반도체 패키지 및 반도체 패키지의 제조 방법 |
| CN118451547A (zh) * | 2022-11-03 | 2024-08-06 | 英诺赛科(苏州)半导体有限公司 | 半导体封装结构及其制造方法 |
| US20240260281A1 (en) * | 2023-01-26 | 2024-08-01 | Micron Technology, Inc. | Molded memory assemblies for a system in package semiconductor device assembly |
| CN118782602A (zh) * | 2023-03-30 | 2024-10-15 | 长鑫存储技术有限公司 | 芯片堆叠封装结构及芯片堆叠封装方法 |
| KR102950559B1 (ko) | 2024-05-31 | 2026-04-10 | 주식회사 에이팩트 | 반도체 패키지 및 그 제조 방법 |
| US20260033378A1 (en) * | 2024-07-23 | 2026-01-29 | Micron Technology, Inc. | Stacked die substrate-less semiconductor package |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003209218A (ja) | 2002-01-15 | 2003-07-25 | Oki Electric Ind Co Ltd | 半導体装置及び半導体装置の製造方法 |
| US20100193930A1 (en) | 2009-02-02 | 2010-08-05 | Samsung Electronics Co., Ltd. | Multi-chip semiconductor devices having conductive vias and methods of forming the same |
| US20150243634A1 (en) | 2014-02-27 | 2015-08-27 | SK Hynix Inc. | Semiconductor device |
Family Cites Families (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5251497A (en) * | 1975-10-24 | 1977-04-25 | Bridgestone Corp | Improved process for preparing flame-retarded polyurethane foam having a low smoking property |
| JPH05251497A (ja) * | 1992-03-09 | 1993-09-28 | Nec Corp | 半導体装置 |
| US8710675B2 (en) * | 2006-02-21 | 2014-04-29 | Stats Chippac Ltd. | Integrated circuit package system with bonding lands |
| KR20090055316A (ko) * | 2007-11-28 | 2009-06-02 | 삼성전자주식회사 | 반도체 패키지와, 이를 구비하는 전자 기기 및 반도체패키지의 제조방법 |
| TW200939407A (en) * | 2008-03-13 | 2009-09-16 | Chipmos Technologies Inc | Multi-chip package structure and the method thereof |
| KR20100112446A (ko) * | 2009-04-09 | 2010-10-19 | 삼성전자주식회사 | 적층형 반도체 패키지 및 그 제조 방법 |
| KR101053140B1 (ko) | 2009-04-10 | 2011-08-02 | 주식회사 하이닉스반도체 | 적층 반도체 패키지 |
| KR101624973B1 (ko) * | 2009-09-23 | 2016-05-30 | 삼성전자주식회사 | 패키지 온 패키지 타입의 반도체 패키지 및 그 제조방법 |
| KR101604605B1 (ko) * | 2009-09-24 | 2016-03-21 | 삼성전자주식회사 | 반도체 패키지 및 이의 제조 방법 |
| KR101686553B1 (ko) * | 2010-07-12 | 2016-12-14 | 삼성전자 주식회사 | 반도체 패키지 및 패키지 온 패키지 |
| KR101738103B1 (ko) * | 2010-09-10 | 2017-05-22 | 삼성전자주식회사 | 3차원 반도체 기억 소자 |
| KR20120035297A (ko) * | 2010-10-05 | 2012-04-16 | 삼성전자주식회사 | 반도체 패키지 및 이의 제조 방법 |
| US8970046B2 (en) * | 2011-07-18 | 2015-03-03 | Samsung Electronics Co., Ltd. | Semiconductor packages and methods of forming the same |
| KR101831938B1 (ko) * | 2011-12-09 | 2018-02-23 | 삼성전자주식회사 | 팬 아웃 웨이퍼 레벨 패키지의 제조 방법 및 이에 의해 제조된 팬 아웃 웨이퍼 레벨 패키지 |
| KR102110405B1 (ko) * | 2013-11-01 | 2020-05-14 | 에스케이하이닉스 주식회사 | 반도체 패키지 및 그 제조방법 |
| KR102143653B1 (ko) * | 2013-12-31 | 2020-08-11 | 에스케이하이닉스 주식회사 | 전자기 간섭 차폐부를 갖는 반도체 패키지 및 제조방법 |
| US20150262902A1 (en) * | 2014-03-12 | 2015-09-17 | Invensas Corporation | Integrated circuits protected by substrates with cavities, and methods of manufacture |
| KR102299673B1 (ko) * | 2014-08-11 | 2021-09-10 | 삼성전자주식회사 | 반도체 패키지 |
| KR20160055100A (ko) * | 2014-10-03 | 2016-05-17 | 인텔 코포레이션 | 수직 기둥들을 갖는 오버랩핑 적층형 다이 패키지 |
| TWI582917B (zh) * | 2015-07-29 | 2017-05-11 | 力成科技股份有限公司 | 以封膠體取代基板核心之多晶片封裝構造 |
| US10396055B2 (en) * | 2015-09-25 | 2019-08-27 | Intel Corporation | Method, apparatus and system to interconnect packaged integrated circuit dies |
| TWI604591B (zh) * | 2015-12-23 | 2017-11-01 | 力成科技股份有限公司 | 薄型扇出式多晶片堆疊封裝構造及其製造方法 |
| US9984998B2 (en) * | 2016-01-06 | 2018-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Devices employing thermal and mechanical enhanced layers and methods of forming same |
| TWI606563B (zh) * | 2016-04-01 | 2017-11-21 | 力成科技股份有限公司 | 薄型晶片堆疊封裝構造及其製造方法 |
| TWI567897B (zh) * | 2016-06-02 | 2017-01-21 | 力成科技股份有限公司 | 薄型扇出式多晶片堆疊封裝構造與製造方法 |
| CN107579061B (zh) * | 2016-07-04 | 2020-01-07 | 晟碟信息科技(上海)有限公司 | 包含互连的叠加封装体的半导体装置 |
| US11469215B2 (en) * | 2016-07-13 | 2022-10-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chip package structure with molding layer and method for forming the same |
| US20200066701A1 (en) * | 2016-09-28 | 2020-02-27 | Intel Corporation | Stacked chip package having substrate interposer and wirebonds |
| US11056465B2 (en) * | 2016-12-29 | 2021-07-06 | Intel Corporation | Semiconductor package having singular wire bond on bonding pads |
| TWI613772B (zh) | 2017-01-25 | 2018-02-01 | Powertech Technology Inc. | 薄型扇出式多晶片堆疊封裝構造 |
| TWI638439B (zh) * | 2017-04-17 | 2018-10-11 | Powertech Technology Inc. | 半導體封裝結構及其製造方法 |
| CN107731761A (zh) * | 2017-09-30 | 2018-02-23 | 睿力集成电路有限公司 | 底部半导体封装件及其制造方法 |
| CN109979907B (zh) * | 2017-12-28 | 2021-01-08 | 瀚宇彩晶股份有限公司 | 电子产品 |
| DE112017008335T5 (de) * | 2017-12-28 | 2020-09-03 | Intel Corporation | Multi-Die, Vertikal-Draht-Package-in-Package-Vorrichtung und Verfahren zum Herstellen desselben |
| KR102475818B1 (ko) | 2018-01-18 | 2022-12-08 | 에스케이하이닉스 주식회사 | 멀티 칩 스택을 포함하는 반도체 패키지 및 제조 방법 |
| KR102173811B1 (ko) * | 2018-05-16 | 2020-11-04 | 주식회사 네패스 | 패키지 유닛 및 멀티 스택 패키지 |
| CN110010481B (zh) * | 2018-10-10 | 2020-12-29 | 浙江集迈科微电子有限公司 | 一种密闭型系统级光电模块封装方式和工艺 |
| CN109585431A (zh) * | 2018-12-17 | 2019-04-05 | 华进半导体封装先导技术研发中心有限公司 | 一种Flash芯片堆叠的扇出封装结构及其制造方法 |
| US11948917B2 (en) * | 2019-04-23 | 2024-04-02 | Intel Corporation | Die over mold stacked semiconductor package |
| KR102774713B1 (ko) * | 2019-09-06 | 2025-03-04 | 에스케이하이닉스 주식회사 | 적층 반도체 칩을 포함하는 반도체 패키지 |
| KR102786360B1 (ko) * | 2019-09-25 | 2025-03-26 | 에스케이하이닉스 주식회사 | 적층 반도체 칩을 포함하는 반도체 패키지 |
| KR102710260B1 (ko) * | 2019-10-01 | 2024-09-27 | 에스케이하이닉스 주식회사 | 적층 반도체 칩을 포함하는 반도체 패키지 |
| KR102610247B1 (ko) * | 2020-11-11 | 2023-12-06 | 주식회사 네패스 | 반도체 패키지 및 이의 제조 방법 |
-
2019
- 2019-11-29 CN CN202111230273.1A patent/CN113964102A/zh active Pending
- 2019-11-29 KR KR1020247014843A patent/KR102902502B1/ko active Active
- 2019-11-29 CN CN201980003370.1A patent/CN111066144B/zh active Active
- 2019-11-29 KR KR1020257042024A patent/KR20260007629A/ko active Pending
- 2019-11-29 WO PCT/CN2019/121821 patent/WO2021102876A1/en not_active Ceased
- 2019-11-29 KR KR1020227000528A patent/KR102664356B1/ko active Active
- 2019-11-29 JP JP2022502145A patent/JP7455951B2/ja active Active
-
2020
- 2020-01-07 US US16/736,741 patent/US11133290B2/en active Active
- 2020-01-07 TW TW109100384A patent/TWI752402B/zh active
-
2021
- 2021-08-23 US US17/408,849 patent/US11688721B2/en active Active
-
2023
- 2023-05-09 US US18/195,096 patent/US12125827B2/en active Active
- 2023-12-13 JP JP2023210084A patent/JP7723065B2/ja active Active
-
2025
- 2025-07-29 JP JP2025126408A patent/JP2025166004A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003209218A (ja) | 2002-01-15 | 2003-07-25 | Oki Electric Ind Co Ltd | 半導体装置及び半導体装置の製造方法 |
| US20100193930A1 (en) | 2009-02-02 | 2010-08-05 | Samsung Electronics Co., Ltd. | Multi-chip semiconductor devices having conductive vias and methods of forming the same |
| US20150243634A1 (en) | 2014-02-27 | 2015-08-27 | SK Hynix Inc. | Semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20240332152A1 (en) * | 2023-04-03 | 2024-10-03 | Yangtze Memory Technologies Co., Ltd. | Integrated package device, fabrication method thereof and memory system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111066144B (zh) | 2021-10-15 |
| JP7723065B2 (ja) | 2025-08-13 |
| JP2022540260A (ja) | 2022-09-14 |
| KR102902502B1 (ko) | 2025-12-22 |
| US11133290B2 (en) | 2021-09-28 |
| US11688721B2 (en) | 2023-06-27 |
| US20210384166A1 (en) | 2021-12-09 |
| US20210167039A1 (en) | 2021-06-03 |
| CN111066144A (zh) | 2020-04-24 |
| JP2025166004A (ja) | 2025-11-05 |
| KR20240068079A (ko) | 2024-05-17 |
| US12125827B2 (en) | 2024-10-22 |
| TW202121625A (zh) | 2021-06-01 |
| CN113964102A (zh) | 2022-01-21 |
| JP2024026357A (ja) | 2024-02-28 |
| KR20220018578A (ko) | 2022-02-15 |
| TWI752402B (zh) | 2022-01-11 |
| KR20260007629A (ko) | 2026-01-14 |
| KR102664356B1 (ko) | 2024-05-13 |
| WO2021102876A1 (en) | 2021-06-03 |
| US20230275070A1 (en) | 2023-08-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7455951B2 (ja) | チップパッケージ構造、およびチップパッケージ構造の製造方法 | |
| CN105390467B (zh) | 芯片堆叠半导体封装件 | |
| US7888785B2 (en) | Semiconductor package embedded in substrate, system including the same and associated methods | |
| KR20180130043A (ko) | 칩 스택들을 가지는 반도체 패키지 | |
| CN101355067A (zh) | 多芯片模块的改进的电连接 | |
| CN105845635A (zh) | 电子封装结构 | |
| US12327821B2 (en) | Semiconductor package having chip stack | |
| US20100237491A1 (en) | Semiconductor package with reduced internal stress | |
| CN105845638B (zh) | 电子封装结构 | |
| US8680686B2 (en) | Method and system for thin multi chip stack package with film on wire and copper wire | |
| CN105845639A (zh) | 电子封装结构及导电结构 | |
| CN114121833A (zh) | 电子封装件及其制法与电子结构 | |
| WO2025241893A1 (zh) | 3d垂直互连封装结构及其制备方法 | |
| US20080044947A1 (en) | A method to provide substrate-ground coupling for semiconductor integrated circuit dice constructed from soi and related materials in stacked-die packages | |
| KR102699633B1 (ko) | 반도체 장치 및 그 제조 방법 | |
| KR102889512B1 (ko) | 반도체 패키지 | |
| US20250246573A1 (en) | Semiconductor package | |
| US20240243111A1 (en) | Semiconductor package | |
| US10090232B1 (en) | Bumpless fan-out chip stacking structure and method for fabricating the same | |
| KR20240177148A (ko) | 반도체 패키지 | |
| CN120184123A (zh) | 利用接合引线作为互联的半导体封装件 | |
| CN118943118A (zh) | 半导体封装 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220112 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220112 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20230110 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230116 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230417 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20230814 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231213 |
|
| A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20231220 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240213 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240313 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7455951 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |