TWI752402B - 晶片封裝結構及其製造方法 - Google Patents
晶片封裝結構及其製造方法 Download PDFInfo
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- TWI752402B TWI752402B TW109100384A TW109100384A TWI752402B TW I752402 B TWI752402 B TW I752402B TW 109100384 A TW109100384 A TW 109100384A TW 109100384 A TW109100384 A TW 109100384A TW I752402 B TWI752402 B TW I752402B
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- Prior art keywords
- vertical conductive
- conductive element
- package structure
- wafers
- wafer
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Abstract
提供了一種包括第一晶片堆疊和重新分佈層的晶片封裝結構。第一晶片堆疊包括複數個第一晶片、第一模製層和至少一個第一垂直導電元件。所述複數個第一晶片是依序堆疊的,其中,所述複數個第一晶片中的每者包括至少一個第一鍵合焊盤,並且第一鍵合焊盤未被所述複數個第一晶片覆蓋。第一模製層包覆所述複數個第一晶片。所述至少一個第一垂直導電元件穿過第一模製層,其中,所述至少一個第一垂直導電元件被設置到第一鍵合焊盤的至少其中之一上並與之電連接。重新分佈層設置在第一晶片堆疊上並且電連接至所述至少一個第一垂直導電元件。
Description
本發明涉及晶片封裝結構及其製造方法,更具體而言涉及具有依序堆疊的複數個晶片的晶片封裝結構及其製造方法。
在半導體製作製程當中,封裝製程能夠對諸如一個或複數個晶片的半導體部件進行包覆,以形成半導體封裝結構,從而對半導體部件予以保護。當今,業界做出了極大努力來研發具有優良特性的封裝結構。例如,在3D半導體裝置(例如,3D記憶體件)當中,封裝結構被研發以期具有諸如低成本、小尺寸、短設計時間、強保護和/或較佳電特性(例如,短電連接距離)的特點。然而,傳統封裝結構無法同時滿足上述優良特性。
本發明提供了具有依序堆疊的複數個晶片的晶片封裝結構及其製造方法。
在實施例中,晶片封裝結構包括第一晶片堆疊和重新分佈層。第一晶片堆疊包括複數個第一晶片、第一模製層和至少一個第一垂直導電元件。所述複數個第一晶片是依序堆疊的,其中,所述複數個第一晶片中的每者包括至
少一個第一鍵合焊盤,並且第一鍵合焊盤未被所述複數個第一晶片覆蓋。第一模製層包覆所述複數個第一晶片。所述至少一個第一垂直導電元件穿過第一模製層,其中,所述至少一個第一垂直導電元件被設置到第一鍵合焊盤的至少其中之一上並與之電連接。重新分佈層設置在第一晶片堆疊上並且電連接至所述至少一個第一垂直導電元件。
在另一個實施例中,提供了晶片封裝結構的製造方法。所述製造方法包括:在載板上堆疊複數個第一晶片,其中,所述複數個第一晶片中的每者具有至少一個第一鍵合焊盤,並且所述第一鍵合焊盤未被所述複數個第一晶片覆蓋;在第一鍵合焊盤的至少其中之一上形成將被電連接至第一鍵合焊盤的至少其中之一的至少一個第一垂直導電元件;形成包覆所述複數個第一晶片的第一模製層,以形成第一晶片堆疊,其中,所述至少一個第一垂直導電元件穿過第一模製層,並且第一晶片堆疊包括所述複數個第一晶片、所述至少一個第一垂直導電元件和第一模製層;以及在第一模製層上形成將被電連接至所述至少一個第一垂直導電元件的重新分佈層。
由於本發明的晶片封裝結構的設計的原因,所述晶片封裝結構具有降低的橫向尺寸,並且可以縮短晶片封裝結構的晶片與外部裝置之間的訊號傳輸路徑。此外,能夠降低晶片封裝結構的設計時間和成本。另一方面,在製作製程中,在存在晶片的偏移時,能夠提高晶片封裝結構的可靠性。
對於本領域技術人員而言,在閱讀了下文對透過各幅附圖例示的優選實施例的詳細描述之後,本發明的這些和其他目標無疑將變得顯而易見。
100,200,300,400:晶片封裝結構
110,110a,110b,110c,110d:第一晶片
112:第一鍵合焊盤
114,314,340:晶粒貼覆膜
120:第一垂直導電元件
130:第一模製層
140:重新分佈層
142,442:導電層
144,444:絕緣層
146:開口
150:焊料球
160:保護層
210:連接導線
310,310a,310b,310c,310d:第二晶片
312:第二鍵合焊盤
320:第二垂直導電元件
330:第二模製層
350:第三垂直導電元件
360:第三模製層
440:子重新分佈層
500,700:方法
510a,520a,530a,510b,520b,530b,540,550,560,570,740:步驟
CB1,CB2:載板
CS1:第一晶片堆疊
CS2:第二晶片堆疊
Dn:法線方向
圖1是示出了根據本發明的第一實施例的晶片封裝結構的截面圖的示意圖。
圖2是示出了根據本發明的第二實施例的晶片封裝結構的截面圖的示意圖。
圖3是示出了根據本發明的第三實施例的晶片封裝結構的截面圖的示意圖。
圖4是示出了根據本發明的第四實施例的晶片封裝結構的截面圖的示意圖。
圖5是示出了根據本發明的實施例的晶片封裝結構的製造方法的流程圖。
圖6A到圖6K是分別例示了根據本發明實施例的晶片封裝結構的製造方法中的狀態的示意圖。
圖7是示出了根據本發明的另一實施例的晶片封裝結構的製造方法的流程圖。
圖8是例示了根據本發明的另一實施例的晶片封裝結構的製造方法中的狀態的示意圖。
儘管討論了具體配置和佈置,但是應當理解所述討論只是為了達到舉例說明的目的。本領域技術人員將認識到可以使用其他配置和佈置而不脫離本公開的實質和範圍。本領域技術人員顯然將認識到也可以將本公開用到各種各樣的其他應用當中。
在本說明書和下文的申請專利範圍中通篇使用某些術語來指代特定部件。本領域技術人員應當理解,電子設備製造商可以用不同的名稱來稱呼部件。本文無意對名稱不同而非功能不同的部件做出區分。在下文的描述和申請專利範圍中,詞語“包括”、“包含”、“具有”是按照開放的方式使用的,因而應當被解釋為“包括但不限於……”。因而,當在本公開的描述當中使用
詞語“包括”、“包含”和/或“具有”時,對應的特徵、區域、步驟、操作和/或部件被指定為存在,但不局限於一個或複數個所述對應特徵、區域、步驟、操作和/或部件的存在。
應當指出,在說明書中提到“一個實施例”、“實施例”、“範例實施例”、“一些實施例”等表示所述的實施例可以包括特定的特徵、結構或特性,但未必每個實施例都包括該特定特徵、結構或特性。此外,這樣的短語未必是指同一實施例。此外,在結合實施例描述特定特徵、結構或特性時,結合明確或未明確描述的其他實施例實現這樣的特徵、結構或特性處於本領域技術人員的知識範圍之內。
一般而言,應當至少部分地由前後文中的使用來理解術語。例如,至少部分地根據前後文,文中採用的詞語“一個或複數個”可以用於從單數的意義上描述任何特徵、結構或特點,或者可以用於從複數的意義上描述特徵、結構或特點的組合。類似地,還可以將詞語“一”、“一個”或“該”理解為傳達單數用法或者傳達複數用法,這至少部分地取決於語境。
應當容易地理解,應當按照最寬的方式解釋本公開中的“在……上”、“在……以上”和“在……之上”,使得“在……上”不僅意味著直接處於某物上,還包含在某物上且其間具有中間特徵或層的含義,“在……以上”或者“在……之上”不僅意味著在某物以上或之上的含義,還包含在某物以上或之上且其間沒有中間特徵或層的含義(即,直接處於某物上)。
此外,文中為了便於說明可以採用空間相對術語,例如,“下面”、
“以下”、“下方”、“以上”、“上方”等,以描述一個元件或特徵與其他元件或特徵的如圖所示的關係。空間相對術語意在包含除了附圖所示的取向之外的處於使用或操作中的裝置的不同取向。所述設備可以具有其他取向(旋轉90度或者處於其他取向上),並照樣相應地解釋文中採用的空間相對描述詞。
文中使用的“基底”一詞是指在上面添加後續材料層的材料。能夠對基底本身圖案化。添加到基底上面的材料可以受到圖案化,或者可以保持不受圖案化。此外,基底可以包括很寬範圍內的一系列半導體材料,例如,矽、鍺、砷化鎵、磷化銦等。或者,基底可以由非導電材料,例如,玻璃、塑膠或者藍寶石晶片等形成。
文中使用的“層”一詞可以指包括具有厚度的區域的材料部分。層可以在整個的下層結構或上層結構之上延伸,或者可以具有比下層或上層結構的範圍小的範圍。此外,層可以是勻質或者非勻質的連續結構的一個區域,非勻質的連續結構的厚度小於該連續結構的厚度。例如,層可以位於所述連續結構的頂表面和底表面之間的任何成對水平面之間,或者位於所述頂表面和底表面處。層可以水準延伸、垂直延伸和/或沿錐形表面延伸。基底可以是層,可以在其內包含一個或複數個層,和/或可以具有位於其上、其以上和/或其以下的一個或複數個層。層可以包括複數個層。例如,互連層可以包括一個或複數個導體和接觸層(在其內形成接觸、互連線路和/或通孔)以及一個或複數個電介質層。
文中所使用的詞語“標稱/標稱地”是指在產品或製程的設計時間內設置的部件或製程操作的特徵或參數的預期或目標值連同高於和/或低於所述預
期值的某一值範圍。所述值範圍可能歸因於製造製程或容限的略微變化。如文中所使用的,“大約”一詞是指既定量的值能夠基於與物件半導體裝置相關聯的特定技術節點發生變動。基於特定技術節點,“大約”一詞可以指示既定量的值在(例如)該值的10~30%(例如,該值的±10%、±20%或者30%)以內發生變動。
儘管諸如第一、第二、第三等的詞語可以被用來描述不同的構成元件,但是這樣的構成元件不受所述詞語的限制。所述詞語僅用於在說明書中將一個構成元件與其他構成元件區分開。這些詞語並非意在對構成元件排序,和/或並非意在對構成元件的製造過程排序。申請專利範圍中可能未使用同樣的詞語,而是可能相對於對元件主張保護的順序使用詞語第一、第二、第三等。相應地,下文的描述當中的第一構成元件可以是請求項中的第二構成元件。
參考圖1,圖1是示出了根據本發明的第一實施例的晶片封裝結構的截面圖的示意圖。如圖1所示,晶片封裝結構100包括第一晶片堆疊CS1和重新分佈層140。在這一實施例中,第一晶片堆疊CS1包括複數個第一晶片110、第一模製層130以及至少一個第一垂直導電元件120,但不限於此。任何其他適當部件可以被任選包含到第一晶片堆疊CS1當中。
第一晶片110可以是透過半導體製作製程形成的,並且第一晶片110可以是相同的或者不同的。例如,在一些實施例中,第一晶片110可以是相同的,並且具有儲存功能;在一些實施例中,第一晶片110可以是不同的,並且第一晶片110可以具有相同功能或不同功能,但不限於此。可以基於需求選擇任何種類的晶片來用作第一晶片110。此外,在一些實施例中,第一晶片110可以具有基
底以及設置在基底上的電子部件。所述電子部件可以包括2D儲存單元、3D儲存單元和/或其他適當部件。例如,電子部件可以是3D儲存單元,使得第一晶片110可以具有儲存功能,並且晶片封裝結構100可以是3D記憶體件,但不限於此。注意,“3D記憶體件”一詞是指具有垂直取向儲存單元電晶體串(即,在本文中稱為“儲存串”)的半導體裝置,所述垂直取向儲存單元電晶體串處於橫向取向的基底上,從而使得所述儲存串相對於基底沿垂直方向延伸。
在圖1中,第一晶片堆疊CS1包括依序堆疊的四個第一晶片110(即,分別為110a、110b、110c和110d),但不限於此。在這一實施例中,第一晶片110可以透過複數個晶粒貼覆膜(DAF)114相互黏貼,其中,晶粒貼覆膜114可以分別設置在三個第一晶片110b、110c和110d的底表面上,但不限於此。此外,第一晶片110的每者包括至少一個第一鍵合焊盤112,其被配置成對應的第一晶片110與外部裝置(諸如訊號源或電源等)之間的訊號傳輸通路的部件。為了使圖1簡單並且清楚,圖1僅示出各第一晶片110具有一個第一鍵合焊盤112;然而實際上,各第一晶片110可以具有一個第一鍵合焊盤112或者複數個第一鍵合焊盤112。第一鍵合焊盤112可以包括至少一種導電材料,諸如金屬和/或透明導電材料,但不限於此。第一鍵合焊盤112未被第一晶片110覆蓋,使得一些導電元件(諸如下文討論的垂直導電元件和/或連接線)可以被設置到第一鍵合焊盤112上並且與之電連接。在這一實施例中,圖1中所示的第一晶片110是按照階梯的形式堆疊的,以露出第一鍵合焊盤112,但不限於此。
第一模製層130可以包覆並且覆蓋第一晶片110,以保護第一晶片110並且減少對第一晶片110的物理損傷和/或化學損傷(諸如氧化、由濕氣帶來的損傷)。第一模製層130可以包括環氧樹脂和/或任何其他適當模製化合物。
各第一垂直導電元件120可以被設置到第一鍵合焊盤112的至少其中之一上並與之電連接。在圖1中,第一晶片堆疊CS1包括複數個第一垂直導電元件120,並且第一垂直導電元件120的每者可以被設置到第一鍵合焊盤112之一上,但不限於此。而且,在這一實施例中,第一垂直導電元件120的每者可以與對應的第一鍵合焊盤112接觸,但不限於此。
此外,第一垂直導電元件120可以穿過第一模製層130,使得第一晶片110可以電連接至設置在第一模製層130上的部件。在圖1中,第一垂直導電元件120的延伸方向可以基本上平行於第一晶片堆疊CS1的法線方向Dn(即,第一晶片堆疊CS1的表面的垂直方向),但不限於此。此外,第一垂直導電元件120可以包括至少一種導電材料,諸如,金、銅、鋁、銀和/或其他適當金屬,但不限於此。
重新分佈層140設置在第一晶片堆疊CS1上,並且重新分佈層140電連接至第一垂直導電元件120。就細節而言,重新分佈層140可以包括至少一個導電層142和至少一個絕緣層144,其中,導電層142可以電連接至第一垂直導電元件120。導電層142可以包括金屬、任何其他適當的導電材料或其組合,並且絕緣層144可以包括有機材料或無機材料(諸如氧化矽、氮化矽、氮氧化矽、任何其他適當的絕緣材料或其組合)。在一些實施例中,如圖1所示,重新分佈層140可以包括一個導電層142和一個絕緣層144。在一些實施例(附圖未示出)中,重新分佈層140可以包括複數個導電層142和複數個絕緣層144。
在圖1的重新分佈層140中,絕緣層144可以具有複數個開口146,以
露出導電層142的複數個部分。此外,如圖1所示,晶片封裝結構100可以進一步包括與導電層142的露出部分接觸的複數個焊料球150。也就是說,焊料球150中的每者對應於開口146之一。在這種情況下,焊料球150中的每者可以起著訊號輸入/輸出端子的作用。透過焊料球150(即,訊號輸入/輸出端子),來自外部裝置的訊號可以被輸入到晶片封裝結構100內,和/或來自晶片封裝結構100的訊號可以被輸出至外部裝置。注意,焊料球150中的每者可以電連接至第一垂直導電元件120的至少其中之一。
具體而言,焊料球150可以是透過設計重新分佈層140而佈置的。因此,晶片封裝結構100可以更易於被接合到電路板上,以便與外部裝置電連接。
在一些實施例中,焊料球150中的相鄰的兩個焊料球之間的距離可以大於對應於這些焊料球150的第一垂直導電元件120中的相鄰兩個第一垂直導電元件之間的距離,但不限於此。在一些實施例中,晶片封裝結構100可以是扇出型封裝,但不限於此。
由於第一晶片110被堆疊到一起,因此能夠降低晶片封裝結構的橫向尺寸。由於晶片封裝結構100使用第一垂直導電元件120和重新分佈層140,而非傳統的導線接合(wire bonding)技術(即,接合在焊盤和接合基底之間的彎曲導線),因而能夠進一步降低晶片封裝結構100的橫向尺寸(因為彎曲導線的兩端不能太過接近),並且可以縮短第一晶片110和外部裝置之間的訊號傳輸通路。
而且,傳統導線接合技術中使用的接合基底不存在於晶片封裝結構100內,因此能夠節省接合基底的設計時間和成本。另一方面,在晶片封裝結構100的製造製程當中,當存在第一晶片110的偏移時,第一垂直導電元件120和重新分佈層140的形成的可靠性高於傳統導線接合技術的可靠性。
晶片封裝結構100可選擇性地包括任何其他適當部件或結構。例如,在圖1中,晶片封裝結構100可以進一步包括設置在第一晶片堆疊CS1的與重新分佈層140相對的一側上的保護層160。保護層160被配置為提供針對晶片封裝結構100的應力補償,以減少封裝翹曲現象。
本發明的晶片封裝結構不限於上述實施例。下文將描述本發明的其他實施例。為了便於比較,在下文中將採用相同的附圖標記標示相同的部件。
下文的描述涉及實施例中的每者之間的差異,並且將不再對重複的部分做多餘描述。
參考圖2,圖2是示出了根據本發明的第二實施例的晶片封裝結構的截面圖的示意圖。為了使圖2簡單、清楚,圖2僅示出各第一晶片110具有一個第一鍵合焊盤112;然而,實際上,各第一晶片110可以具有一個第一鍵合焊盤112或者複數個第一鍵合焊盤112。如圖2中所示,這一實施例與第一實施例之間的差異在於,這一實施例的晶片封裝結構200進一步包括至少一條連接導線210,並且每一連接導線210電連接於第一鍵合焊盤112中的兩個之間,這兩個第一鍵合焊盤分別屬於第一晶片110中的兩個第一晶片,使得第一垂直導電元件120之一可以電連接至第一晶片110中的至少兩個。例如,圖2示出了電連接至第一鍵合焊盤112中的分別屬於兩個第一晶片110c和110d的兩個第一鍵合焊盤之間的一條連接導線210,並且最上第一垂直導電元件120電連接至這兩個第一晶片110c和110d,但不限於此。連接導線210可以設置在任何其他適當位置上,並且可以基於需求使用任何適當數量的連接導線210。作為示例,在一些實施例中,一條連接導線210電連接在第一鍵合焊盤112中的分別屬於兩個第一晶片110c和110d
的兩個第一鍵合焊盤112之間,並且另一連接導線210電連接在第一鍵合焊盤112中的分別屬於兩個第一晶片110b和110c的兩個第一鍵合焊盤112之間,使得最上第一垂直導電元件120(或另一第一垂直導電元件120)電連接至這三個第一晶片110b、110c和110d,但不限於此。作為另一個示例,在一些實施例中,一條連接導線210電連接在第一鍵合焊盤112中的分別屬於兩個第一晶片110c和110d的兩個第一鍵合焊盤112之間,另一連接導線210電連接在第一鍵合焊盤112中的分別屬於兩個第一晶片110b和110c的兩個第一鍵合焊盤112之間,並且又一連接導線210電連接在第一鍵合焊盤112中的分別屬於兩個第一晶片110a和110b的兩個第一鍵合焊盤112之間,使得最上第一垂直導電元件120(或另一第一垂直導電元件120)電連接至這四個第一晶片110a~110d,但不限於此。
此外,連接導線210可以由導線接合製程形成,並且連接導線210可以包括至少一種導電材料,諸如金、銅、鋁、銀和/或其他適當金屬,但不限於此。
參考圖3,圖3是示出了根據本發明的第三實施例的晶片封裝結構的截面圖的示意圖。為了使圖3簡單、清楚,圖3僅示出各第一晶片110具有一個第一鍵合焊盤112;然而,實際上,各第一晶片110可以具有一個第一鍵合焊盤112或者複數個第一鍵合焊盤112。如圖3中所示,這一實施例與第一實施例之間的差異在於,這一實施例的晶片封裝結構300進一步包括設置在第一晶片堆疊CS1和重新分佈層140之間的第二晶片堆疊CS2。第二晶片堆疊CS2可以包括複數個第二晶片310、第二模製層330以及至少一個第二垂直導電元件320,但不限於此。任何其他適當部件可以被選擇性地包含到第二晶片堆疊CS2當中。
第二晶片310可以是透過半導體製作製程形成的,並且第二晶片310可以是相同的或者不同的。例如,在一些實施例中,第二晶片310可以是相同的,並且具有儲存功能;在一些實施例中,第二晶片310可以是不同的,並且第二晶片310可以具有相同功能或不同功能,但不限於此。可以基於需求選擇任何種類的晶片來用作第二晶片310。此外,在一些實施例中,第二晶片310可以具有基底以及設置在基底上的電子部件。所述電子部件可以包括2D儲存單元、3D儲存單元和/或其他適當部件。
在一些實施例中,第二晶片310的至少其中之一可以與第一晶片110的至少其中之一相同,但不限於此。在一些實施例中,所有第二晶片310可以不同於所有第一晶片110。
在圖3中,第二晶片堆疊CS2包括依序堆疊的四個第二晶片310(即,分別為310a、310b、310c和310d),但不限於此。在這一實施例中,第二晶片310可以透過複數個晶粒貼覆膜314相互黏貼,其中,晶粒貼覆膜314可以分別設置在三個第二晶片310b、310c和310d的底表面上,但不限於此。此外,第二晶片310的每者包括至少一個第二鍵合焊盤312,其起著對應的第二晶片310與外部裝置之間的訊號傳輸通路上的部件的作用。為了使圖3簡單、清楚,圖3僅示出各第二晶片310具有一個第二鍵合焊盤312;然而,實際上,各第二晶片310可以具有一個第二鍵合焊盤312或者複數個第二鍵合焊盤312。第二鍵合焊盤312可以包括至少一種導電材料,諸如金屬和/或透明導電材料,但不限於此。第二鍵合焊盤312未被第二晶片310覆蓋,使得一些導電元件(下文討論的)可以被設置到第二鍵合焊盤312上並且與之電連接。在這一實施例中,圖3中所示的第二晶片310按照階梯的形式堆疊,從而露出第二鍵合焊盤312,但不限於此。
第二模製層330可以包覆並且覆蓋第二晶片310,以保護第二晶片310並且減少對第二晶片310的物理損傷和/或化學損傷(諸如氧化、由濕氣帶來的損傷)。第二模製層330可以包括環氧樹脂和/或任何其他適當模製化合物。在一些實施例中,第二模製層330的材料可以與第一模製層130的材料相同,但不限於此。
各第二垂直導電元件320可以被設置到第二鍵合焊盤312的至少其中之一上並與之電連接。在圖3中,第二晶片堆疊CS2包括複數個第二垂直導電元件320,並且各第二垂直導電元件320可以設置在第二鍵合焊盤312之一上,但不限於此。而且,在這一實施例中,各第二垂直導電元件320可以與對應的第二鍵合焊盤312接觸,但不限於此。
此外,第二垂直導電元件320可以穿過第二模製層330,使得第二晶片310可以電連接至設置在第二模製層330上的部件。在圖3中,第二垂直導電元件320的延伸方向可以基本上平行於第二晶片堆疊CS2的法線方向(即,第二晶片堆疊CS2的表面的垂直方向),但不限於此。在一些實施例中,第二垂直導電元件320的延伸方向可以基本上平行於第一垂直導電元件120的延伸方向(即,第二垂直導電元件320的延伸方向基本上平行於第一晶片堆疊CS1的法線方向Dn),但不限於此。此外,第二垂直導電元件320可以包括至少一種導電材料,諸如,金、銅、鋁、銀和/或其他適當金屬,但不限於此。在一些實施例中,第二垂直導電元件320的材料可以與第一垂直導電元件120的材料相同,但不限於此。
在圖3中,重新分佈層140電連接至第二垂直導電元件320。類似地,在重新分佈層140中,絕緣層144可以進一步具有更多開口146,從而露出導電層142的更多部分,並且與開口146之一對應的焊料球150中的每者可以電連接至第一垂直導電元件120的至少其中之一和/或第二垂直導電元件320的至少其中之一。
具體而言第一晶片堆疊CS1的功能可以與第二晶片堆疊CS2的功能相同或不同。而且,第一晶片110的數量可以與第二晶片310的相同或不同。
此外,晶片封裝結構300可以進一步包括設置在第二晶片堆疊CS2的底表面上的晶粒貼覆膜340,使得第二晶片堆疊CS2可以透過晶粒貼覆膜340黏貼至第一晶片堆疊CS1。在圖3中,第二晶片堆疊CS2按照階梯形式堆疊在第一晶片堆疊CS1上,但不限於此。此外,在一些實施例中,第一垂直導電元件120和第二垂直導電元件320可以位於相對於晶片封裝結構300的中心的不同部分處。
例如,在圖3中,第一垂直導電元件120可以位於相對於晶片封裝結構300的中心的左側部分處,並且第二垂直導電元件320可以位於相對於晶片封裝結構300的中心的右側部分處,但不限於此。在一些實施例中,第一垂直導電元件120和第二垂直導電元件320可以位於相對於晶片封裝結構300的中心的同一部分處。例如,第一垂直導電元件120和第二垂直導電元件320可以位於相對於晶片封裝結構300的中心的左側部分處。此外,圖3中所示的第二晶片堆疊CS2不覆蓋第一鍵合焊盤112和第一垂直導電元件120,但不限於此。
具體而言,晶片封裝結構300可以進一步包括第三模製層360和至少一個第三垂直導電元件350。第三模製層360可以包覆第一晶片堆疊CS1和第二晶
片堆疊CS2。在圖3中,第三模製層360可以被填充到第一晶片堆疊CS1和重新分佈層140之間的縫隙以及第二晶片堆疊CS2和保護層160之間的縫隙當中。第三模製層360可以包括環氧樹脂和/或任何其他適當模製化合物。在一些實施例中,第三模製層360的材料可以與第一模製層130的材料和/或第二模製層330的材料相同,但不限於此。
各第三垂直導電元件350可以被設置到第一垂直導電元件120之一上並與之電連接,並且各第三垂直導電元件350可以電連接至重新分佈層140。也就是說,第一晶片110的第一鍵合焊盤112可以透過第一垂直導電元件120和第三垂直導電元件350電連接至重新分佈層140。在圖3中,晶片封裝結構300包括複數個第三垂直導電元件350,並且各第三垂直導電元件350可以與對應的第一垂直導電元件120接觸,但不限於此。
此外,第三垂直導電元件350可以穿過第三模製層360。在圖3中,第三垂直導電元件350的延伸方向可以基本上平行於第一晶片堆疊CS1的法線方向Dn,但不限於此。在一些實施例中,第三垂直導電元件350的延伸方向可以基本上平行於第一垂直導電元件120的延伸方向和/或第二垂直導電元件320的延伸方向,但不限於此。此外,第二垂直導電元件320可以包括至少一種導電材料,諸如,金、銅、鋁、銀和/或其他適當金屬,但不限於此。在一些實施例中,第三垂直導電元件350的材料可以相同於第一垂直導電元件120的材料和/或第二垂直導電元件320的材料,但不限於此。
在一些實施例中,晶片封裝結構300可以進一步包括設置在第二晶片堆疊CS2和重新分佈層140之間的其他晶片堆疊。在這種情況下,第三模製層360
還可以包覆設置在第二晶片堆疊CS2和重新分佈層140之間的晶片堆疊。
因此,由於晶片堆疊是堆疊的,因而能夠降低晶片封裝結構300的橫向尺寸。而且,由於使用了垂直導電元件,因而能夠進一步降低晶片封裝結構300的橫向尺寸。另一方面,在製造過程中,當存在晶片的偏移時,所述垂直導電元件和重新分佈層140的形成的可靠性高於傳統導線接合技術的可靠性。
參考圖4,圖4是示出了根據本發明的第四實施例的晶片封裝結構的截面圖的示意圖。為了使圖4簡單、清楚,圖4僅示出各第一晶片110中具有一個第一鍵合焊盤112,並且各第二晶片310中具有一個第二鍵合焊盤312;然而實際上,各第一晶片110中可以具有一個第一鍵合焊盤112或者複數個第一鍵合焊盤112,並且各第二晶片310中可以具有一個第二鍵合焊盤312或者複數個第二鍵合焊盤312。如圖4所示,這一實施例與第三實施例之間的差異在於,這一實施例的晶片封裝結構400的第一晶片堆疊CS1進一步包括子重新分佈層440,其中,子重新分佈層440設置在第一垂直導電元件120和第三垂直導電元件350之間。換言之,子重新分佈層440處於第一模製層130上。
子重新分佈層440的結構與重新分佈層140類似。就細節而言,子重新分佈層440可以包括至少一個導電層442和至少一個絕緣層444,其中,導電層442可以電連接到第一垂直導電元件120和第三垂直導電元件350之間。導電層442可以包括金屬、任何其他適當的導電材料或其組合,並且絕緣層444可以包括有機材料或無機材料。在一些實施例中,如圖3所示,子重新分佈層440可以包括一個導電層442和一個絕緣層444。在一些實施例(附圖未示出)中,子重新分佈層440可以包括複數個導電層142和複數個絕緣層144。
在圖4中,由於子重新分佈層440的原因,第三垂直導電元件350可以不必直接設置在對應的第一垂直導電元件120上。也就是說,相互對應的第三垂直導電元件350和第一垂直導電元件120在第一晶片堆疊CS1的法線方向Dn上可以是錯開的。因而,第三垂直導電元件350可以設置在任何其他適當位置上。此外,在這種情況下,圖4中所示的第二晶片堆疊CS2可以與第一晶片110d的第一鍵合焊盤112以及最上第一垂直導電元件120重疊,但不限於此。因此,增加了第一晶片堆疊CS1與第二晶片堆疊CS2的重疊區域,從而降低了晶片封裝結構400的橫向尺寸。
在下文中公開了用於製造前述晶片封裝結構的示例性方法。
參考圖5,圖5是示出了根據本發明的實施例的晶片封裝結構的製造方法的流程圖。應當認識到,圖5所示的流程圖只是示例性的。在一些實施例中,可以同時或者按照與圖5所示的不同的順序執行所述步驟中的一些。在一些實施例中,可以在方法500的現有步驟之一之前或之後在方法500中添加任何其他適當步驟。關於下文的內容,將參考圖5描述方法500。然而,方法500不限於這些示例性實施例。
為了更清楚地解釋方法500,進一步參考圖6A到圖6K以及圖3。圖6A到圖6K是分別示出了根據本發明的實施例的晶片封裝結構300的製造方法的各個狀態的示意圖。注意,進一步參考圖6A到圖6K以及圖3,以示出圖3所示的晶片封裝結構300(即,第三實施例的晶片封裝結構300)的製造過程。
在圖5的步驟510a中,第一晶片110被堆疊到載板CB1上(如圖6A中所示)。例如,在圖6A中,第一晶片110是按照階梯的形式堆疊的,使得第一鍵合焊盤112不被第一晶片110覆蓋。此外,晶粒貼覆膜114可以被設置到一些第一晶片110b、110c和110d的底表面上,使得第一晶片110可以相互黏貼。
在圖5的步驟520a中,第一垂直導電元件120被形成到第一鍵合焊盤112上,從而電連接至第一鍵合焊盤112(如圖6B中所示)。在一些實施例中,第一垂直導電元件120可以是透過接合製程形成的,其中,第一垂直導電元件120的一個末端被接合到第一鍵合焊盤112上,而第一垂直導電元件120的另一末端不與任何東西發生接觸。因而,第一垂直導電元件120的延伸方向可以基本上平行於第一晶片堆疊CS1的法線方向Dn。
可選擇地,在一些實施例中,可以形成電連接於第一鍵合焊盤112中的分別屬於兩個第一晶片110的兩個第一鍵合焊盤之間的連接導線210(參考圖2),但不限於此。
在圖5的步驟530a中,形成第一模製層130,以包覆第一晶片110,由此形成第一晶片堆疊CS1(如圖6C和圖6D中所示),其中,第一晶片堆疊CS1包括第一晶片110、第一垂直導電元件120和第一模製層130。
就細節而言,如圖6C中所示,第一模製層130被形成為覆蓋第一晶片110和第一垂直導電元件120。之後,如圖6D中所示,對第一模製層130的表面減薄,從而露出每一第一垂直導電元件120的末端。換言之,形成第一模製層130的步驟可以包括:對第一模製層130的表面減薄,以露出每一第一垂直導電元件
120的末端。因此,第一垂直導電元件120可以電連接至在後續製造製程當中形成於第一模製層130上的部件。此外,這一減薄步驟採用化學機械拋光(CMP)或任何其他適當製程。此外,在形成第一模製層130之後,第一垂直導電元件120可以穿過第一模製層130。
可選擇地,在一些實施例中,在形成第一模製層130之後,子重新分佈層440(參考圖4)可以被形成到第一模製層130上,但不限於此。
在圖5的步驟510b中,第二晶片310被堆疊到載板CB1上(如圖6A中所示)。例如,在圖6A中,第二晶片310是按照階梯形式堆疊的,使得第二鍵合焊盤312未被第二晶片310覆蓋。此外,晶粒貼覆膜314可以被設置到一些第二晶片310b、310c和310d的底表面上,使得第二晶片310可以相互黏貼。
在圖5的步驟520b中,第二垂直導電元件320被形成到第二鍵合焊盤312上,從而電連接至第二鍵合焊盤312(如圖6B中所示)。在一些實施例中,第二垂直導電元件320可以是透過接合製程形成的,其中,第二垂直導電元件320的一個末端被接合到第二鍵合焊盤312上,而第二垂直導電元件320的另一末端不與任何東西發生接觸。因而,第二垂直導電元件320的延伸方向可以基本上平行於第二晶片堆疊CS2的法線方向(例如,在一些實施例中,第二垂直導電元件320可以基本上平行於第一晶片堆疊CS1的法線方向Dn)。
在圖5的步驟530b中,形成第二模製層330,以包覆第二晶片310,由此形成第二晶片堆疊CS2(如圖6C和圖6D中所示),其中,第二晶片堆疊CS2包括第二晶片310、第二垂直導電元件320和第二模製層330。
就細節而言,如圖6C所示,第二模製層330被形成為覆蓋第二晶片310和第二垂直導電元件320。之後,如圖6D所示,對第二模製層330的表面減薄,以露出每一第二垂直導電元件320的末端,使得第二垂直導電元件320可以電連接至在後續製造製程中形成在第二模製層330上的部件。此外,該減薄步驟採用化學機械拋光(CMP)或任何其他適當製程。此外,在形成第二模製層330之後,第二垂直導電元件320可以穿過第二模製層330。
在一些實施例中,如圖5和圖6A中所示,步驟510a中的載板可以與步驟510b中的載板相同;也就是說,第一晶片110和第二晶片310可以被堆疊到同一載板CB1上,但不限於此。因此,步驟510a和步驟510b可以同時執行。在一些實施例(附圖未示出)中,步驟510a中的載板可以不同於步驟510b中的載板,並且步驟510a和步驟510b可以不同時執行。
在一些實施例中,如圖5以及圖6B到圖6D中所示,可以同時執行步驟520a和步驟520b,並且可以同時執行步驟530a和步驟530b,使得第一晶片堆疊CS1和第二晶片堆疊CS2形成在同一載板CB1上,並且第一模製層130和第二模製層330由相同材料形成,但不限於此。如圖6C和圖6D中所示,第一模製層130和第二模製層330直接相互連接,但不限於此。
之後,在一些實施例中,某一步驟可以被添加到方法500中。例如,由於在圖6D中第一晶片堆疊CS1和第二晶片堆疊CS2形成在同一載板CB1上,因而執行用於移除載板CB1的步驟以及用於將第一晶片堆疊CS1與第二晶片堆疊CS2分開的步驟。更確切地來講,如圖6E所示,載板CB1可以被移除,使得第一
晶片堆疊CS1和第二晶片堆疊CS2可以與載板CB1分開。在一些實施例中,可以執行離型製程,從而將第一晶片堆疊CS1和第二晶片堆疊CS2與載板CB1分開,但不限於此。之後,可以使第一晶片堆疊CS1和第二晶片堆疊CS2相互分開。在一些實施例中,可以執行切割製程,從而將第一晶片堆疊CS1與第二晶片堆疊CS2分開,但不限於此。可選擇地,在將第一晶片堆疊CS1與第二晶片堆疊CS2分開之後,可以在第二晶片堆疊CS2的底表面上進一步形成晶粒貼覆膜340。
在圖5的步驟540中,將第二晶片堆疊CS2堆疊到第一晶片堆疊CS1上(如圖6F中所示)。就細節而言,第一晶片堆疊CS1可以被設置到另一載板CB2上,之後,第二晶片堆疊CS2被堆疊到第一晶片堆疊CS1上,其中,該載板CB2可以與前述載板CB1相同或不同。例如,在圖6F中,第二晶片堆疊CS2可以被按照階梯形式堆疊到第一晶片堆疊CS1上,使得第一鍵合焊盤112不被第二晶片堆疊CS2覆蓋。此外,在一些實施例中,第二晶片堆疊CS2和第一晶片堆疊CS1透過形成在第二晶片堆疊CS2的底表面上的晶粒貼覆膜340相互黏貼。
在圖5的步驟550中,第三垂直導電元件350被形成到第一垂直導電元件120上,從而電連接至第一垂直導電元件120(如圖6G中所示)。第三垂直導電元件350的形成製程與第一垂直導電元件120的形成製程類似。在一些實施例中,第三垂直導電元件350可以是透過接合製程形成的,其中,第三垂直導電元件350的一個末端被接合到第一垂直導電元件120上,而第三垂直導電元件350的另一末端不與任何東西發生接觸。因而,第三垂直導電元件350的延伸方向可以基本上平行於第一晶片堆疊CS1的法線方向Dn。
在圖5的步驟560中,形成第三模製層360以包覆第一晶片堆疊CS1和
第二晶片堆疊CS2(如圖6H和圖6I中所示)。就細節而言,如圖6H所示,第三模製層360被形成為覆蓋第一晶片堆疊CS1、第二晶片堆疊CS2和第三垂直導電元件350。之後,如圖6I中所示,對第三模製層360的表面減薄,以露出每一第三垂直導電元件350的末端和每一第二垂直導電元件320的末端。因此,第三垂直導電元件350和第二垂直導電元件320可以電連接至在後續製造製程中形成的部件。此外,該減薄步驟採用化學機械拋光或任何其他適當製程。此外,在形成第三模製層360之後,第三垂直導電元件350可以穿過第三模製層360。
在圖5的步驟570中,將重新分佈層140形成到第一晶片堆疊CS1和第二晶片堆疊CS2上,從而電連接至第一垂直導電元件120、第二垂直導電元件320和第三垂直導電元件350(如圖6J中所示)。重新分佈層140可以包括至少一個導電層142和至少一個絕緣層144,其中,導電層142可以電連接至第一垂直導電元件120。在圖6J中,例如,導電層142可以被形成到第一晶片堆疊CS1和第二晶片堆疊CS2上並受到圖案化,以便電連接至第一垂直導電元件120、第二垂直導電元件320和第三垂直導電元件350(在圖6J中,導電層142可以與第一垂直導電元件120、第二垂直導電元件320和第三垂直導電元件350的末端接觸);之後,絕緣層144可以被形成到導電層142上,並且絕緣層144可以受到圖案化,以形成露出導電層142的複數個部分的開口146,但不限於此。此外,導電層142和絕緣層144可以是透過一種或多種薄膜沉積製程形成的,所述製程包括但不限於化學氣相沉積(CVD)、物理氣相沉積(PVD)、原子層沉積(ALD)或其任何組合;並且導電層142和絕緣層144可以透過(但不限於)微影製程受到圖案化。
此外,複數個焊料球150可以被形成到重新分佈層140上。更確切地來講,焊料球150可以被形成到重新分佈層140上並且對應於開口146。
之後,在圖6K中,可以移除載板CB2。在一些實施例中,可以執行離型製程,從而將第一晶片堆疊CS1與載板CB2分開,但不限於此。
可選擇地,保護層160可以被形成到第一晶片堆疊CS1的與重新分佈層140相對的一側上,從而完成圖3中所示的晶片封裝結構300。在一些實施例中,保護層160可以被黏貼到第一晶片堆疊CS1上,但不限於此。
參考圖7,圖7是根據本發明的另一實施例的晶片封裝結構的製造方法的流程圖。應當認識到,圖7中所示的流程圖只是示例性的。在一些實施例中,可以同時或者按照與圖7中所示的不同的順序執行所述步驟中的一些。在一些實施例中,可以在方法700的現有步驟之一之前或之後在方法700中添加任何其他適當步驟。關於下文的內容,將參考圖7描述方法700。然而,方法700不限於這些示例性實施例。
為了更清楚地解釋方法700,進一步參考圖6A到圖6D、圖8以及圖1。
圖8是例示了根據本發明的另一實施例的晶片封裝結構的製造方法中的狀態的示意圖。注意,進一步參考圖6A到圖6D、圖8以及圖1,以示出圖1中所示的晶片封裝結構100(即,第一實施例的晶片封裝結構100)的製造過程。
對圖7的步驟510a、520a和530a的解釋可以參考上述內容和圖5,因而將不再對步驟510a、520a和530a做贅述。注意,在這一實施例中可以不形成圖6A到圖6D中所示的第二晶片堆疊CS2。
在圖7的步驟740中,在第一晶片堆疊CS1上形成重新分佈層140,從而使之電連接至第一垂直導電元件120(如圖8中所示)。重新分佈層140的形成方法可以參考上述內容,並且將不對重複部分做贅述。此外,焊料球150可以被形成到重新分佈層140上並且對應於開口146。
之後,可以移除載板CB1。在一些實施例中,可以執行離型製程,從而將第一晶片堆疊CS1與載板CB1分開,但不限於此。
可選擇地,保護層160可以被形成到第一晶片堆疊CS1的與重新分佈層140相對的一側上,從而完成圖1所示的晶片封裝結構100。
概括地說,由於本發明的晶片封裝結構的設計的原因,晶片封裝結構具有降低的橫向尺寸,並且可以縮短晶片封裝結構的晶片與外部裝置之間的訊號傳輸路徑。此外,能夠降低晶片封裝結構的設計時間和成本。另一方面,在製作製程中,在存在晶片的偏移時,能夠提高晶片封裝結構的可靠性。
上文對具體實施例的描述將充分揭示本公開的整體實質,本領域技術人員不需要過多的試驗就能夠透過應用本領域的知識容易地針對各種應用修改和/或調整這樣的具體實施例,而不脫離本公開的整體原理。因此,基於文中提供的教導和指引,意在使這樣的調整和修改落在所公開的實施例的含義以及等價方案的範圍內。應當理解,文中的措辭或術語是為了達到描述而非限定目的,因而本領域技術人員應當根據所述教導和指引對本說明書的術語或措辭加以解釋。
上文借助於說明所指定的功能及其關係的實施方式的功能方塊描述了本公開的實施例。為了描述的方便起見,任意地定義了這些功能方塊的邊界。可以定義替代邊界,只要適當地執行指定功能及其關係即可。
發明內容部分和摘要部分可能闡述了本發明人設想的本公開的一個或複數個示範性實施例,而非全部的示範性實施例,因而並非意在透過任何方式對本公開和所附請求項構成限制。
本公開的寬度和範圍不應由上述示範性實施例中的任何示範性實施例限制,而是應僅根據下述申請專利範圍及其等價方案界定。
100:晶片封裝結構
110,110a,110b,110c,110d:第一晶片
112:第一鍵合焊盤
114:晶粒貼覆膜
120:第一垂直導電元件
130:第一模製層
140:重新分佈層
142:導電層
144:絕緣層
146:開口
150:焊料球
160:保護層
CS1:第一晶片堆疊
Dn:法線方向
Claims (16)
- 一種晶片封裝結構,包括:第一晶片堆疊,包括:依序堆疊的複數個第一晶片,其中,所述複數個第一晶片中的每者包括至少一個第一鍵合焊盤,並且所述第一鍵合焊盤未被所述複數個第一晶片覆蓋;包覆所述複數個第一晶片的第一模製層;以及穿過所述第一模製層的至少一個第一垂直導電元件,其中,所述至少一個第一垂直導電元件被設置到所述第一鍵合焊盤的至少其中之一上並與之電連接;設置在所述第一晶片堆疊上並且電連接至所述至少一個第一垂直導電元件的重新分佈層;第二晶片堆疊,設置在所述第一晶片堆疊和所述重新分佈層之間,其中,所述第二晶片堆疊包括:依序堆疊的複數個第二晶片,其中,所述複數個第二晶片中的每者包括至少一個第二鍵合焊盤,並且所述第二鍵合焊盤未被所述複數個第二晶片覆蓋;包覆所述複數個第二晶片的第二模製層;以及穿過所述第二模製層的至少一個第二垂直導電元件,其中,所述至少一個第二垂直導電元件被設置到所述第二鍵合焊盤的至少其中之一上並與之電連接,並且所述至少一個第二垂直導電元件電連接至所述重新分佈層;第三模製層,包覆所述第一晶片堆疊和所述第二晶片堆疊;以及至少一個第三垂直導電元件,穿過所述第三模製層,其中,所述至少一個 第三垂直導電元件被設置在所述至少一個第一垂直導電元件上並與之電連接,並且所述至少一個第三垂直導電元件電連接至所述重新分佈層。
- 如請求項1所述的晶片封裝結構,其中,所述至少一個第三垂直導電元件的延伸方向基本上平行於所述第一晶片堆疊的法線方向。
- 如請求項1所述的晶片封裝結構,其中,所述第一晶片堆疊還包括設置在所述至少一個第一垂直導電元件和所述至少一個第三垂直導電元件之間的子重新分佈層。
- 如請求項1所述的晶片封裝結構,其中,所述第二晶片堆疊被按照階梯形式堆疊到所述第一晶片堆疊上。
- 如請求項1所述的晶片封裝結構,其中,所述至少一個第一垂直導電元件的延伸方向基本上平行於所述第一晶片堆疊的法線方向。
- 如請求項1所述的晶片封裝結構,其中,所述複數個第一晶片是按照階梯的形式堆疊的。
- 如請求項1所述的晶片封裝結構,還包括設置在所述第一晶片堆疊的與所述重新分佈層相對的一側上的保護層。
- 據請求項1所述的晶片封裝結構,其中,所述第一晶片堆疊還包括 電連接於所述第一鍵合焊盤中的分別屬於所述複數個第一晶片中的兩個第一晶片的兩個第一鍵合焊盤之間的連接導線。
- 一種晶片封裝結構的製造方法,包括:在載板上堆疊複數個第一晶片,其中,所述複數個第一晶片中的每者具有至少一個第一鍵合焊盤,並且所述第一鍵合焊盤未被所述複數個第一晶片覆蓋;在所述第一鍵合焊盤的至少其中之一上形成將被電連接至所述第一鍵合焊盤的所述至少其中之一的至少一個第一垂直導電元件;形成包覆所述複數個第一晶片的第一模製層,以形成第一晶片堆疊,其中,所述至少一個第一垂直導電元件穿過所述第一模製層,並且所述第一晶片堆疊包括所述複數個第一晶片、所述至少一個第一垂直導電元件和所述第一模製層;將第二晶片堆疊堆疊到所述第一晶片堆疊上,其中,所述第二晶片堆疊包括:依序堆疊的複數個第二晶片,其中,所述複數個第二晶片中的每者包括至少一個第二鍵合焊盤,並且所述第二鍵合焊盤未被所述複數個第二晶片覆蓋;包覆所述複數個第二晶片的第二模製層;以及穿過所述第二模製層的至少一個第二垂直導電元件,其中,所述至少一個第二垂直導電元件被設置到所述第二鍵合焊盤的至少其中之一上並與之電連接;在所述至少一個第一垂直導電元件上形成將電連接至所述至少一個第一垂直導電元件的至少一個第三垂直導電元件; 形成包覆所述第一晶片堆疊和所述第二晶片堆疊的第三模製層,其中,所述至少一個第三垂直導電元件穿過所述第三模製層;以及在所述第一晶片堆疊與所述第二晶片堆疊上形成將被電連接至所述至少一個第一垂直導電元件、所述至少一個第二垂直導電元件與所述至少一個第三垂直導電元件的重新分佈層。
- 如請求項9所述的晶片封裝結構的製造方法,其中,所述第二晶片堆疊的形成方法包括:堆疊所述複數個第二晶片;在所述第二鍵合焊盤的至少其中之一上形成所述至少一個第二垂直導電元件;以及形成包覆所述複數個第二晶片的所述第二模製層。
- 如請求項9所述的晶片封裝結構的製造方法,其中,所述第一晶片堆疊和所述第二晶片堆疊形成在同一載板上。
- 如請求項9所述的晶片封裝結構的製造方法,其中,所述第二晶片堆疊被按照階梯形式堆疊到所述第一晶片堆疊上。
- 如請求項9所述的晶片封裝結構的製造方法,其中,所述第一模製層的形成步驟包括:對所述第一模製層的表面減薄,以露出所述至少一個第一垂直導電元件的末端。
- 如請求項9所述的晶片封裝結構的製造方法,其中,所述複數個第一晶片是按照階梯的形式堆疊的。
- 如請求項9所述的晶片封裝結構的製造方法,還包括:移除所述載板。
- 如請求項15所述的晶片封裝結構的製造方法,其中,在移除所述載板的步驟之後,所述製造方法包括:在所述第一晶片堆疊的與所述重新分佈層相對的一側上形成保護層。
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