JP7108625B2 - 圧電トランスデューサを有するイメージング・デバイス - Google Patents
圧電トランスデューサを有するイメージング・デバイス Download PDFInfo
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- JP7108625B2 JP7108625B2 JP2019550544A JP2019550544A JP7108625B2 JP 7108625 B2 JP7108625 B2 JP 7108625B2 JP 2019550544 A JP2019550544 A JP 2019550544A JP 2019550544 A JP2019550544 A JP 2019550544A JP 7108625 B2 JP7108625 B2 JP 7108625B2
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Description
本発明は、イメージング・デバイスに関し、より詳細には、圧電トランスデューサを有するイメージング・デバイスに関する。
人体の内部器官を画像化し、内部器官の画像を表示するための非侵入的イメージング・システムは、信号を人体中に送信し、器官から反射された信号を受信する。典型的には、イメージング・システムにおいて使用されるトランスデューサはトランシーバと呼ばれ、トランシーバのいくつかは、光音響効果または超音波効果に基づく。一般に、圧電トランスデューサは、医療撮像、管内の流れ測定、スピーカー、マイクロフォン、砕石術、治療のための組織加熱および手術のための高強度集束超音波(HIFU)のような撮像および他の応用に使用される。
Claims (23)
- 基板と;
前記基板から懸架される少なくとも一つの膜と;
第二の基板であって、前記第二の基板は第一の金属導体を含み、前記少なくとも一つの膜は第二の金属導体を含み、前記第一および第二の金属導体が可変の空隙によって電気的に分離されており、前記可変の空隙は前記少なくとも一つの膜のたわみを示す、第二の基板と;
前記少なくとも一つの膜に取り付けられた複数のトランスデューサ素子とを有する、
トランシーバ素子であって、
前記複数のトランスデューサ素子のそれぞれは、下部電極、下部電極上の圧電層および圧電層上の少なくとも一つの上部電極を有し、前記複数のトランスデューサ素子のそれぞれは、前記下部電極と前記少なくとも一つの上部電極の間に電位を印加することに応答して曲げモーメントを生成し、曲げモーメントを印加することに応答して電荷を生成し、
前記複数のトランスデューサ素子のうちの第一のトランスデューサ素子の圧電層が、前記複数のトランスデューサ素子のうちの第二のトランスデューサ素子の圧電層と逆向きに分極されている、
トランシーバ素子。 - 前記少なくとも一つの膜が、溝およびバンプの少なくとも一方を含み、それにより可変の厚さをもつ、請求項1記載のトランシーバ素子。
- 第一の共振周波数をもつ前記第一のトランスデューサ素子および前記第一の共振周波数とは異なる第二の共振周波数をもつ前記第二のトランスデューサ素子が逆向きの曲げモーメントを生成する、請求項1記載のトランシーバ素子。
- 第一の共振周波数をもつ前記第一のトランスデューサ素子が、前記第一の共振周波数とは異なる第二の共振周波数をもつ前記第二のトランスデューサ素子と同じ向きの曲げモーメントを生成する、請求項1記載のトランシーバ素子。
- 前記第一のトランスデューサ素子の前記少なくとも一つの上部電極が、前記第二のトランスデューサ素子の前記下部電極に電気的に結合され、前記第一のトランスデューサ素子の前記下部電極が前記第二のトランスデューサ素子の前記少なくとも一つの上部電極に電気的に結合されている、請求項1記載のトランシーバ素子。
- 前記圧電層が一つまたは複数の圧電サブ層を含む、請求項1記載のトランシーバ素子。
- 前記少なくとも一つの膜が第一および第二の膜を含み、前記第一および第二の膜が異なる共振モードでアクチュエーションされる、請求項1記載のトランシーバ素子。
- 前記第一のトランスデューサ素子に加えられる電気信号が前記第二のトランスデューサ素子に加えられる電気信号に対して位相遅延をもつ、請求項1記載のトランシーバ素子。
- 前記少なくとも一つの膜が第一および第二の膜を含み、前記第一の膜は送信モードにおいて圧力波を生成するために動作し、前記第二の膜は受信モードにおいて圧力波を検出するためにのみ動作する、請求項1記載のトランシーバ素子。
- 前記基板が前記少なくとも一つの膜の下に配置された少なくとも一つの空洞を含み、前記空洞は真空であるまたは気体で充填されている、請求項1記載のトランシーバ素子。
- 前記第二の基板は光源を含み、前記少なくとも一つの膜は前記光源によって発される光の一部を通過させるよう配置された開口を含む、請求項1記載のトランシーバ素子。
- 前記圧電層が、PZT、KNN、PZT-N、PMN-Pt、AlN、Sc-AlN、ZnO、PVDFおよびLiNiO3のうちの少なくとも一つを含む、請求項1記載のトランシーバ素子。
- 前記基板において形成され、かつ膜と膜の間に配置された一つまたは複数の溝をさらに有する、請求項1記載のトランシーバ素子。
- 圧力波を発生させ、外部圧力波を電気信号に変換するためのトランシーバ・セルと;
前記トランシーバ・セルの動作を制御するための制御ユニットとを有するイメージング・システムであって、
前記トランシーバ・セルは:
基板と;
前記基板から懸架される少なくとも一つの膜と;
第二の基板であって、前記第二の基板は第一の金属導体を含み、前記少なくとも一つの膜は第二の金属導体を含み、前記第一および第二の金属導体が可変の空隙によって電気的に分離されており、前記可変の空隙は前記少なくとも一つの膜のたわみを示す、第二の基板と;
前記少なくとも一つの膜に取り付けられた複数のトランスデューサ素子とを含み、前記複数のトランスデューサ素子のそれぞれは、下部電極、下部電極上の圧電層および圧電層上の少なくとも一つの上部電極を有し、前記複数のトランスデューサ素子のそれぞれは、前記下部電極および前記少なくとも一つの上部電極の間に電位を印加することに応答して曲げモーメントを生成し、前記外部圧力波に起因する曲げモーメントに応答して電荷を生成し、
前記複数のトランスデューサ素子のうちの第一のトランスデューサ素子の圧電層が、前記複数のトランスデューサ素子のうちの第二のトランスデューサ素子の圧電層と逆向きに分極されている、
イメージング・システム。 - 前記トランシーバ・セルによって生成された圧力波を集束させるためのコーティング層をさらに有する、
請求項14記載のイメージング・システム。 - 前記電気信号を処理するためのプロセッサと;
前記プロセッサからの処理された信号に基づいて画像を表示するためのディスプレイとをさらに有する、
請求項14記載のイメージング・システム。 - 前記少なくとも一つの膜は第一および第二の膜を含み、前記第一および第二の膜は異なる共振モードでアクチュエーションされる、請求項14記載のイメージング・システム。
- 基板と;
前記基板から懸架され、前記基板に対して動くよう前記基板から離間されている部分を含む少なくとも一つの膜と;
第二の基板であって、前記第二の基板は第一の金属導体を含み、前記少なくとも一つの膜は第二の金属導体を含み、前記第一および第二の金属導体が可変の空隙によって電気的に分離されており、前記可変の空隙は前記少なくとも一つの膜のたわみを示す、第二の基板と;
前記少なくとも一つの膜の前記部分の上面に取り付けられた複数のトランスデューサ素子とを有する、
トランシーバ素子であって、
前記複数のトランスデューサ素子のそれぞれは、下部電極、下部電極上の圧電層および圧電層上の少なくとも一つの上部電極を有し、前記複数のトランスデューサ素子のそれぞれは、前記下部電極と前記少なくとも一つの上部電極の間に電位を印加することに応答して曲げモーメントを生成し、曲げモーメントを印加することに応答して電荷を生成し、前記複数のトランスデューサ素子は互いから物理的に離間されており、
前記複数のトランスデューサ素子のうちの第一のトランスデューサ素子の圧電層が、前記複数のトランスデューサ素子のうちの第二のトランスデューサ素子の圧電層と逆向きに分極されている、
トランシーバ素子。 - 前記複数のトランスデューサ素子のうちの第一のトランスデューサ素子が、前記複数のトランスデューサ素子のうちの第二のトランスデューサ素子と逆向きに分極されている、請求項18記載のトランシーバ素子。
- 前記第一のトランスデューサ素子の前記少なくとも一つの上部電極が、前記第二のトランスデューサ素子の前記下部電極に電気的に結合され、前記第一のトランスデューサ素子の前記下部電極が前記第二のトランスデューサ素子の前記少なくとも一つの上部電極に電気的に結合されている、請求項19記載のトランシーバ素子。
- 圧力波を発生させ、外部圧力波を電気信号に変換するためのトランシーバ・セルと;
前記トランシーバ・セルの動作を制御するための制御ユニットとを有するイメージング・システムであって、
前記トランシーバ・セルは:
基板と;
前記基板から懸架され、前記基板に対して動くよう前記基板から離間されている部分を含む少なくとも一つの膜と;
第二の基板であって、前記第二の基板は第一の金属導体を含み、前記少なくとも一つの膜は第二の金属導体を含み、前記第一および第二の金属導体が可変の空隙によって電気的に分離されており、前記可変の空隙は前記少なくとも一つの膜のたわみを示す、第二の基板と;
前記少なくとも一つの膜の前記部分の上面に取り付けられた複数のトランスデューサ素子とを含み、前記複数のトランスデューサ素子のそれぞれは、下部電極、下部電極上の圧電層および圧電層上の少なくとも一つの上部電極を有し、前記複数のトランスデューサ素子のそれぞれは、前記下部電極と前記少なくとも一つの上部電極の間に電位を印加することに応答して曲げモーメントを生成し、曲げモーメントを印加することに応答して電荷を生成し、前記複数のトランスデューサ素子は互いから物理的に離間されており、
前記複数のトランスデューサ素子のうちの第一のトランスデューサ素子の圧電層が、前記複数のトランスデューサ素子のうちの第二のトランスデューサ素子の圧電層と逆向きに分極されている、
イメージング・システム。 - 前記複数のトランスデューサ素子のうちの第一のトランスデューサ素子が、前記複数のトランスデューサ素子のうちの第二のトランスデューサ素子と逆向きに分極されている、請求項21記載のイメージング・システム。
- 前記第一のトランスデューサ素子の前記少なくとも一つの上部電極が、前記第二のトランスデューサ素子の前記下部電極に電気的に結合され、前記第一のトランスデューサ素子の前記下部電極が前記第二のトランスデューサ素子の前記少なくとも一つの上部電極に電気的に結合されている、請求項22記載のイメージング・システム。
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