US20210275143A1 - Low voltage, low power mems transducer with direct interconnect capability - Google Patents
Low voltage, low power mems transducer with direct interconnect capability Download PDFInfo
- Publication number
- US20210275143A1 US20210275143A1 US17/318,416 US202117318416A US2021275143A1 US 20210275143 A1 US20210275143 A1 US 20210275143A1 US 202117318416 A US202117318416 A US 202117318416A US 2021275143 A1 US2021275143 A1 US 2021275143A1
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- piezoelectric
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- 239000000758 substrate Substances 0.000 claims abstract description 99
- 239000012528 membrane Substances 0.000 claims abstract description 72
- 239000004020 conductor Substances 0.000 claims description 158
- 238000003384 imaging method Methods 0.000 claims description 112
- 239000000523 sample Substances 0.000 claims description 17
- 230000007246 mechanism Effects 0.000 claims description 14
- 210000000056 organ Anatomy 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 238000002604 ultrasonography Methods 0.000 claims description 9
- 230000000630 rising effect Effects 0.000 claims description 8
- 230000011664 signaling Effects 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 4
- 229910013336 LiNiO3 Inorganic materials 0.000 claims description 2
- 239000002033 PVDF binder Substances 0.000 claims description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 2
- 230000000593 degrading effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 82
- 238000000034 method Methods 0.000 description 45
- 238000010586 diagram Methods 0.000 description 42
- 230000008569 process Effects 0.000 description 27
- 239000000463 material Substances 0.000 description 18
- 230000001276 controlling effect Effects 0.000 description 16
- 230000006870 function Effects 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 11
- 230000002829 reductive effect Effects 0.000 description 9
- 238000013461 design Methods 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 210000001519 tissue Anatomy 0.000 description 7
- 238000003491 array Methods 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 239000011247 coating layer Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 210000001835 viscera Anatomy 0.000 description 5
- 241001465754 Metazoa Species 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000002059 diagnostic imaging Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 239000006098 acoustic absorber Substances 0.000 description 3
- 230000017531 blood circulation Effects 0.000 description 3
- 230000001934 delay Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 210000001367 artery Anatomy 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000003278 mimic effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 210000003462 vein Anatomy 0.000 description 2
- -1 vias Substances 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 208000029549 Muscle injury Diseases 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000001574 biopsy Methods 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000035876 healing Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000002406 microsurgery Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
- 230000001225 therapeutic effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000000451 tissue damage Effects 0.000 description 1
- 231100000827 tissue damage Toxicity 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000012285 ultrasound imaging Methods 0.000 description 1
Images
Classifications
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
- A61B8/4483—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer
- A61B8/4494—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer characterised by the arrangement of the transducer elements
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
- A61B8/4444—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device related to the probe
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/08—Detecting organic movements or changes, e.g. tumours, cysts, swellings
- A61B8/0883—Detecting organic movements or changes, e.g. tumours, cysts, swellings for diagnosis of the heart
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/13—Tomography
- A61B8/14—Echo-tomography
- A61B8/145—Echo-tomography characterised by scanning multiple planes
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
- A61B8/4444—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device related to the probe
- A61B8/4455—Features of the external shape of the probe, e.g. ergonomic aspects
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
- A61B8/4444—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device related to the probe
- A61B8/4461—Features of the scanning mechanism, e.g. for moving the transducer within the housing of the probe
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
- A61B8/4483—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
- A61B8/4483—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer
- A61B8/4488—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer the transducer being a phased array
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/46—Ultrasonic, sonic or infrasonic diagnostic devices with special arrangements for interfacing with the operator or the patient
- A61B8/461—Displaying means of special interest
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/48—Diagnostic techniques
- A61B8/488—Diagnostic techniques involving Doppler signals
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/52—Devices using data or image processing specially adapted for diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/5207—Devices using data or image processing specially adapted for diagnosis using ultrasonic, sonic or infrasonic waves involving processing of raw data to produce diagnostic data, e.g. for generating an image
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/54—Control of the diagnostic device
- A61B8/546—Control of the diagnostic device involving monitoring or regulation of device temperature
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/0207—Driving circuits
- B06B1/0215—Driving circuits for generating pulses, e.g. bursts of oscillations, envelopes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/0207—Driving circuits
- B06B1/0223—Driving circuits for generating signals continuous in time
- B06B1/0238—Driving circuits for generating signals continuous in time of a single frequency, e.g. a sine-wave
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
- B06B1/0607—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements
- B06B1/0622—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements on one surface
- B06B1/0629—Square array
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
- B06B1/0644—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a single piezoelectric element
- B06B1/0662—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a single piezoelectric element with an electrode on the sensitive surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
- B06B1/0688—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction with foil-type piezoelectric elements, e.g. PVDF
- B06B1/0692—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction with foil-type piezoelectric elements, e.g. PVDF with a continuous electrode on one side and a plurality of electrodes on the other side
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S15/00—Systems using the reflection or reradiation of acoustic waves, e.g. sonar systems
- G01S15/88—Sonar systems specially adapted for specific applications
- G01S15/89—Sonar systems specially adapted for specific applications for mapping or imaging
- G01S15/8906—Short-range imaging systems; Acoustic microscope systems using pulse-echo techniques
- G01S15/8909—Short-range imaging systems; Acoustic microscope systems using pulse-echo techniques using a static transducer configuration
- G01S15/8915—Short-range imaging systems; Acoustic microscope systems using pulse-echo techniques using a static transducer configuration using a transducer array
- G01S15/8925—Short-range imaging systems; Acoustic microscope systems using pulse-echo techniques using a static transducer configuration using a transducer array the array being a two-dimensional transducer configuration, i.e. matrix or orthogonal linear arrays
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/52—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S15/00
- G01S7/52017—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S15/00 particularly adapted to short-range imaging
- G01S7/52046—Techniques for image enhancement involving transmitter or receiver
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/52—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S15/00
- G01S7/52017—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S15/00 particularly adapted to short-range imaging
- G01S7/52079—Constructional features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/52—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S15/00
- G01S7/521—Constructional features
-
- H01L41/053—
-
- H01L41/0805—
-
- H01L41/0973—
-
- H01L41/098—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
- H10N30/2048—Membrane type having non-planar shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
- A61B8/4427—Device being portable or laptop-like
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
- A61B8/4444—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device related to the probe
- A61B8/4472—Wireless probes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B2201/00—Indexing scheme associated with B06B1/0207 for details covered by B06B1/0207 but not provided for in any of its subgroups
- B06B2201/70—Specific application
- B06B2201/76—Medical, dental
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/52—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S15/00
- G01S7/52017—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S15/00 particularly adapted to short-range imaging
- G01S7/52079—Constructional features
- G01S7/5208—Constructional features with integration of processing functions inside probe or scanhead
Definitions
- the present invention relates to imaging devices, and more particularly, to imaging devices having configurable ultrasonic line imagers.
- a non-intrusive imaging system/probe for imaging internal tissue, bones, blood flow or organs of human or animal body and displaying the images requires transmission of a signal into the body and receiving an emitted or reflected signal from the body part being imaged.
- transducers that are used in an imaging system are referred to as transceivers and some of the transceivers are based on photo-acoustic or ultrasonic effects.
- the transceivers are used for imaging, but are not necessarily limited to imaging.
- the transceivers can be used in medical imaging, flow measurements in pipes, speaker and microphone arrays, lithotripsy, localized tissue heating for therapeutics or highly intensive focused ultrasound (HIFU) for surgery.
- HIFU highly intensive focused ultrasound
- the conventional transducers built from bulk piezoelectric (PZT) material typically require very high voltage pulses to generate transmission signals, typically 100 V or more. This high voltage results in high power dissipation, since the power consumption/dissipation in the transducers is proportional to the square of the drive voltage. There is also a limit on how hot the surface of the probe could be and this limits how much power could be consumed in the probe, since the consumed power is proportional to the heat generated by the probe. In the conventional systems, the heat generation has necessitated cooling arrangements for some probes, increasing the manufacturing costs and weights of the probes. In general, the weight of the conventional probe is also an issue, since a large number of sonographers, who use these probes, are known to suffer from muscular injuries.
- the conventional ultrasound probes in use for medical imaging typically use PZT material or other piezo ceramic and polymer composites.
- Probes typically house the transducers and some other electronics with means to cause an image to be displayed on a display unit.
- To fabricate the conventional bulk PZT elements for the transducers one can simply cut a thick piezoelectric material slab into large rectangular shaped PZT elements. These rectangular shaped PZT elements are very expensive to build, since the manufacturing process involves precisely cutting of the rectangular shaped thick PZT or ceramic material and mounting on substrates with precise spacing. Further, the impedance of the transducers is much higher than the impedance of the transmit/receive electronics for the transducers.
- the transmit/receive electronics for the transducers often are located far away from the probe, requiring micro-coax cables between the transducers and electronics.
- the cables need to have a precise length for delay and impedance matching, and, quite often, additional impedance matching networks are required for efficient connection of the transducers through the cables to the electronics.
- CMUTs capacitive micromachined ultrasound transducers
- pMUTs piezoelectric micromachined ultrasound transducers
- the conventional cMUT sensors are particularly prone to failure or drift in performance due to the charge build-up during the high voltage operation, difficulty with generating high enough acoustic pressure at lower frequencies and are inherently nonlinear.
- the conventional pMUTs have been a promising alternative but have issues related to transmission and receive inefficiencies, still required relatively high operating voltages and had limited bandwidth As such, there is a need for pMUTs that have an enhanced efficiency, that can operate at lower voltages and exhibit high bandwidth.
- a transceiver includes: a substrate; a membrane suspending from the substrate; a bottom electrode disposed on the membrane; a piezoelectric layer disposed on the bottom electrode; first and second top electrodes disposed on the piezoelectric layer, the first top electrode being electrically separated from the second top electrode; and the piezoelectric layer including a first portion located under the first top electrode and poled in a first direction and a second portion located under the second top electrode and poled in a second direction that is opposite to the first direction.
- a transceiver includes: a transceiver substrate and an ASIC chip.
- the transceiver substrate includes: a substrate; at least one membrane disposed on the substrate; and a plurality of piezoelectric elements disposed on the at least one membrane, each of the plurality of piezoelectric elements including; a bottom electrode; a piezoelectric layer disposed on the bottom electrode; first and second top electrodes disposed on the piezoelectric layer, the first top electrode being electrically and spatially separated from the second top electrode; and the piezoelectric layer including a first portion located under the first top electrode and poled in a first direction and a second portion located under the second top electrode and poled in a second direction that is opposite to the first direction.
- the ASIC chip is electrically coupled to the transceiver substrate by a three dimensional interconnection mechanism and includes: at least one circuit for controlling one or more of the plurality of piezoelectric elements; and a control unit electrically coupled to the at least one circuit and controlling the at least one circuit.
- an imaging system includes first and second imaging device.
- Each of the first and second imaging device includes: a substrate; at least one membrane disposed on the substrate; and a plurality of piezoelectric elements disposed on the at least one membrane.
- Each of the plurality of piezoelectric elements includes; a bottom electrode; a piezoelectric layer disposed on the bottom electrode; first and second top electrodes disposed on the piezoelectric layer, the first top electrode being electrically and spatially separated from the second top electrode; and the piezoelectric layer including a first portion located under the first top electrode and poled in a first direction and a second portion located under the second top electrode and poled in a second direction that is opposite to the first direction.
- the first imaging device transmits pressure waves toward a target to be imaged and wherein the second imaging device is located at a different location from the first imaging device and receives pressure waves reflected from the target.
- FIG. 1 shows a schematic diagram of an imaging system according to embodiments of the present disclosure.
- FIG. 2 shows a schematic diagram of an ultrasonic imager according to embodiments of the present disclosure.
- FIG. 2A shows a schematic diagram of an ultrasonic imager according to embodiments of the present disclosure.
- FIG. 3A shows a side views of an exemplary transceiver array according to embodiments of the present disclosure.
- FIG. 3B shows a top view of a transceiver tile according to embodiments of the present disclosure.
- FIG. 4-8 show steps for fabricating an exemplary piezoelectric element according to embodiments of the present disclosure.
- FIG. 9 shows a schematic diagram of a piezoelectric element according to embodiments of the present disclosure.
- FIG. 10A shows a schematic diagram of a piezoelectric element according to embodiments of the present disclosure.
- FIG. 10B shows a symbolic representation of the piezoelectric element in FIG. 10A .
- FIG. 10C shows a schematic cross sectional view of an exemplary piezoelectric element according to embodiments of the present disclosure.
- FIG. 10D shows a schematic diagram of a piezoelectric element according to embodiments of the present disclosure.
- FIG. 10E shows a schematic diagram of a piezoelectric element according to embodiments of the present disclosure.
- FIG. 10F shows a schematic diagram of a piezoelectric element according to embodiments of the present disclosure.
- FIG. 10G shows a bottom view of the piezoelectric element in FIG. 10F according to embodiments of the present disclosure.
- FIG. 10H shows a cross sectional view of the piezoelectric element in FIG. 10F according to embodiments of the present disclosure.
- FIG. 11 shows a schematic diagram of a piezoelectric element according to embodiments of the present disclosure.
- FIG. 12-16 shows steps for fabricating an exemplary piezoelectric element according to embodiments of the present disclosure.
- FIG. 17A shows dipole orientations of a piezoelectric material before, during and after a poling process according to embodiments of the present disclosure.
- FIG. 17B shows a flow chart of an illustrative process for poling a piezoelectric layer according to embodiments of the present disclosure.
- FIG. 18A shows a schematic diagram of an imaging assembly according to embodiments of the present disclosure.
- FIG. 18B shows a schematic diagram of an imaging assembly according to embodiments of the present disclosure.
- FIG. 19A-1 shows a top view of a transceiver substrate and an ASIC chip according to embodiments of the present disclosure.
- FIG. 19A-2 shows a side view of an imaging assembly according to embodiments of the present disclosure.
- FIG. 19B-1 shows a top view of a transceiver substrate and an ASIC chip according to embodiments of the present disclosure.
- FIG. 19B-2 shows a side view of an imaging assembly according to embodiments of the present disclosure.
- FIG. 19C shows a top view of a transceiver substrate and an ASIC chip according to embodiments of the present disclosure.
- FIG. 19D shows a top view of a transceiver substrate and an ASIC chip according to embodiments of the present disclosure.
- FIG. 19E shows a top view of a transceiver substrate and an ASIC chip according to embodiments of the present disclosure.
- FIG. 19F shows a top view of a transceiver substrate and an ASIC chip according to embodiments of the present disclosure.
- FIG. 19G shows a top view of a transceiver substrate and an ASIC chip according to embodiments of the present disclosure.
- FIG. 20 illustrates a schematic diagram of an array of piezoelectric elements capable of performing two and three dimensional imaging according to embodiments of the present disclosure.
- FIG. 21 illustrates a schematic diagram of an array of piezoelectric elements according to embodiments of the present disclosure.
- FIG. 22 illustrates a schematic diagram of an array of piezoelectric elements according to embodiments of the present disclosure.
- FIG. 23 illustrates a schematic diagram of an array of piezoelectric elements according to embodiments of the present disclosure.
- FIG. 24 illustrates a schematic diagram of an array of piezoelectric elements according to embodiments of the present disclosure.
- FIG. 25 illustrates a schematic diagram of an array of piezoelectric elements according to embodiments of the present disclosure.
- FIG. 26 illustrates a schematic diagram of an array of piezoelectric elements according to embodiments of the present disclosure.
- FIG. 27 illustrates a schematic diagram of an array of piezoelectric elements according to embodiments of the present disclosure.
- FIG. 28 illustrates a schematic diagram of an imaging system according to embodiments of the present disclosure.
- FIG. 29 illustrates a schematic diagram of an imaging system according to embodiments of the present disclosure.
- FIG. 30 shows an embodiment of a piezoelectric element coupled to a circuit element according to embodiments of the present disclosure.
- FIG. 31 shows a circuit for controlling multiple piezoelectric element according to embodiments of the present disclosure.
- FIG. 32 shows a circuit for controlling multiple piezoelectric element according to embodiments of the present disclosure.
- FIG. 33 shows a transmit drive signal waveform according to embodiments of the present disclosure.
- FIG. 34 shows a transmit drive signal waveform according to embodiments of the present disclosure.
- FIG. 35 shows a transmit drive signal waveform according to embodiments of the present disclosure.
- FIG. 36 shows input/output signals of various circuits in an imaging assembly according to embodiments of the present disclosure.
- FIG. 37A shows a plot of the amplitude of a transmit pressure wave as a function of angle according to embodiments of the present disclosure.
- FIG. 37B shows windows for apodization process according to embodiments of the present disclosure.
- FIG. 38 shows a schematic diagram of an imaging assembly according to embodiments of the present disclosure.
- the pMUT transducers and transducer assemblies may be used for generating images of internal organs of a human/animal body as well as other therapeutic applications where ultrasonic beams are used to heat tissue for healing or focus high power ultrasonic beams for micro surgery.
- the piezoelectric elements may also be used for tomography applications.
- the manufacturing cost of pMUTs may be reduced by applying modern semiconductor and wafer processing techniques.
- thin film piezoelectric layer may be spun on or sputtered onto semiconductor wafers and later patterned to create piezoelectric sensors that each have two or more electrodes.
- each piezoelectric element may be designed to have the ability to emit or receive signals at a certain frequency, known as center frequency, as well as the second and/or additional frequencies.
- center frequency known as center frequency
- the terms piezoelectric element, pMUT, transceiver, and pixel are used interchangeably.
- FIG. 1 shows a schematic diagram of an imaging system 100 according to embodiments of the present disclosure.
- the system 100 may include: an imager 120 that generates and transmits pressure waves 122 toward an internal organ 112 , such as heart, in a transmit mode/process; and a device 102 that sends and receives signals to the imager through a communication channel 130 .
- the internal organ 112 may reflect a portion of the pressure waves 122 toward the imager 120 , and the imager 120 may capture the reflected pressure waves and generate electrical signals in a receive mode/process.
- the imager 120 may communicate electrical signals to the device 102 and the device 102 may display images of the organ or target on a display/screen 104 using the electrical signals.
- the imager 120 may be used to perform one dimensional imaging, also known as A-Scan, two dimensional imaging, also known as B scan, three dimensional imaging, also sometimes referred to as C scan, and Doppler imaging. Also, the imager may be switched to various imaging modes under program control.
- the imager 120 may be used to get an image of internal organs of an animal, too.
- the imager 120 may also be used to determine direction and velocity of blood flow in arteries and veins as in Doppler mode imaging and also measure tissue stiffness.
- the pressure wave 122 may be acoustic, ultrasonic, or photo-acoustic waves that can travel through the human/animal body and be reflected by the internal organs, tissue or arteries and veins.
- the imager 120 may be a portable device and communicate signals through the communication channel 130 , either wirelessly (using a protocol, such as 802.11 protocol) or via a cable (such as USB2, USB 3, USB 3.1, and USB-C), with the device 102 .
- the device 102 may be a mobile device, such as cell phone or iPad, or a stationary computing device that can display images to a user.
- an imager may be configured to simultaneously transmit and receive ultrasonic waveforms.
- Certain piezoelectric elements may be configured to send pressure waves toward the target organ being imaged while other piezoelectric elements may receive the pressure waves reflected from the target organ and develop electrical charges in response to the received waves.
- FIG. 2 shows a schematic diagram of the imager 120 according to embodiments of the present disclosure.
- the imager 120 may be an ultrasonic imager.
- the imager 120 may include: a transceiver tile(s) 210 for transmitting and receiving pressure waves; a coating layer 212 that operates as a lens for steering the propagation direction of and/or focusing the pressure waves and also functions as an impedance interface between the transceiver tile and the human body 110 ; a control unit 202 , such as ASIC chip (or, shortly ASIC), for controlling the transceiver tile(s) 210 and coupled to the transducer tile 210 by bumps; Field Programmable Gate Arrays (FPGAs) 214 for controlling the components of the imager 120 ; a circuit(s) 215 , such as Analogue Front End (AFE), for processing/conditioning signals; an acoustic absorber layer 203 for absorbing waves that are generated by the transducer tiles 210 and propagate toward
- AFE Analogue Front End
- the device 102 may have a display/screen. In such a case, the display may not be included in the imager 120 .
- the imager 120 may receive electrical power from the device 102 through one of the ports 230 . In such a case, the imager 120 may not include the battery 206 . It is noted that one or more of the components of the imager 120 may be combined into one integral electrical element. Likewise, each component of the imager 120 may be implemented in one or more electrical elements.
- the user may apply gel on the skin of the human body 110 before the body 110 makes a direct contact with the coating layer 212 so that the impedance matching at the interface between the coating layer 212 and the human body 110 may be improved, i.e., the loss of the pressure wave 122 at the interface is reduced and the loss of the reflected wave travelling toward the imager 120 is also reduced at the interface.
- the transceiver tiles 210 may be mounted on a substrate and may be attached to an acoustic absorber layer. This layer absorbs any ultrasonic signals that are emitted in the reverse direction, which may otherwise be reflected and interfere with the quality of the image.
- the coating layer 212 may be only a flat matching layer just to maximize transmission of acoustic signals from the transducer to the body and vice versa.
- the thickness of the coating layer 212 may be a quarter wavelength of the pressure wave generated by the transducer tile(s) 202 .
- Beam focus in the elevation direction. which is along the direction of the length of the column, is not essential in this case, because it can be electronically implemented in control unit 202 . Even then, the lens may be designed with a focus in some cases.
- the imager 120 may use the reflected signal to create an image of the organ 112 and results may be displayed on a screen in a variety of format, such as graphs, plots, and statistics shown with or without the images of the organ 112 .
- control unit 202 such as ASIC, may be assembled as one unit together with the transceiver tiles.
- control unit 202 may be located outside the imager 120 and electrically coupled to the transceiver tile 210 via a cable 220 (e.g., as shown in FIG. 2A ).
- the imager 120 may include a housing or enclosure 250 that encloses the components 202 - 215 and a heat dissipation mechanism for dissipating heat energy generated by the components as shown in FIG. 2A .
- a second housing or enclosure 251 may be provided to enclose the control unit 202 while the other components 203 - 215 are enclosed by the first housing or enclosure 250 .
- FIG. 3A shows a schematic diagram of an exemplary transceiver array having three transceiver tiles 210 according to embodiments of the present disclosure.
- the tiles may be on a planar surface or on a curved surface.
- FIG. 3B shows a top view of the transceiver tile 210 that includes one or more piezoelectric elements 302 according to embodiments of the present disclosure.
- the transceiver tile 210 may include a transceiver substrate 304 and one or more piezoelectric elements 302 arranged on the transceiver substrate 304 .
- the pMUT array 302 may be formed on a wafer and the wafer may be diced to form multiple transceiver tiles 210 . This process may reduce the manufacturing cost since the transceiver tiles 210 may be fabricated in high volume and at low cost. In embodiments, the diameter of the wafer may range 6-12 inches and many pMUT arrays may be batch manufactured. Further, in embodiments, as discussed in conjunction with FIGS. 18 and 19 , the integrated circuits for controlling the pMUT array 302 may be formed in an ASIC chip so that the pMUT array 302 may be connected to the matching integrated circuits in close proximity, preferably within 25 ⁇ m-100 ⁇ m. For example, the transceiver tile 210 may have 1024 pMUT elements 302 and be connected to a matching ASIC chip that has the appropriate number of circuits for driving the 1024 pMUT elements 302 .
- each piezoelectric element 302 may have any suitable shape such as, square, rectangle, and circle, so on.
- two or more piezoelectric elements may be connected to form a larger pixel element.
- FIG. 3B when building an imager, it is desirable to have a two dimensional array of piezoelectric element 302 , arranged in orthogonal directions.
- a column of N piezoelectric elements 302 may be connected electrically in parallel. Then, this line element may provide transmission and reception of ultrasonic signals similar to those achieved by a continuous piezoelectric element that is almost N times longer than each element.
- This line element may be called a column or line or line element interchangeably.
- tiles may be arranged in other shape such as circular, or other shapes.
- one or more temperature sensors 320 may be installed in the transducer tile 210 to measure the temperature of the tile 210 .
- the imager 120 may include one or more temperature sensors for measuring temperatures at various locations of the imager 120 .
- a line element of a conventional design may be 280 ⁇ m in width and 8000 ⁇ m tall, while the thickness may be 100 ⁇ m.
- the composite structure i.e. the line element
- the composite structure may act as one line element with a center frequency that consists of the center frequencies of all the element pixels. In modern semiconductor processes, these center frequencies match well to each other and have a very small deviation from the center frequency of the line element. It is also possible to mix several pixels of somewhat different center frequencies to create a wide bandwidth line compared to lines using only one central frequency.
- the piezoelectric elements 302 have a suspended membrane associated with them that vibrates at a center frequency when exposed to stimulus at that frequency and behave like resonators. There is a selectivity associated with these resonators, known as a Q factor.
- Q may be usually designed to be low (close 1 or thereabouts) and achieved by a combination of design of the pixels and loading applied to the pixels in actual use.
- the loading may be provided by application of a layer of RTV or other material to the top face of the piezoelectric elements, where the loading may facilitate closer impedance matching between the transducer surface emitting and receiving the pressure waves and the human body part being imaged.
- the low Q and the well matched center frequency may allow the line element to essentially act like a line imaging element with substantially one center frequency.
- loading may also include a matching layer below the transducers, where the emitted waveform is absorbed by an acoustic absorber.
- each piezoelectric element 302 may be spaced 250 ⁇ m from each other center to center. Further to simplify, say they are square in shape. Now, let's say, to mimic a conventional line element, a column of the piezoelectric elements 302 may be connected to each other. For example, 24 piezoelectric elements 302 in a column may create a line element of roughly 6 mm in elevation, with each element being 0.25 mm in width. In embodiments, this connection may be achieved at wafer level using a metal interconnect layer.
- the transceiver tile 210 may include one or more membranes that suspend from the substrate and the piezoelectric elements 302 may be disposed on the membranes.
- a membrane may be disposed under each of the piezoelectric elements 302 .
- more than one piezoelectric elements may be disposed on one membrane 309 .
- more than one membrane may be disposed under one of the piezoelectric elements 302 . More information on the arrangement of piezoelectric elements on a membrane may be found in a copending U.S. patent application Ser. No. 15/820,319, entitled “Imaging devices having piezoelectric transducers,” filed on Nov. 21, 2017, which is herein incorporated by reference in its entirety.
- the voltage potential across the top and bottom electrodes ranges 100V-200V.
- the voltage potential across the top and bottom electrodes is about 30V.
- the piezoelectric elements 302 may include a scaled down thin piezoelectric layer, and the piezoelectric layer may have a thickness in the order of 2 ⁇ m or less.
- FIGS. 4-8 show steps for fabricating an exemplary piezoelectric element according to embodiments of the present disclosure.
- FIG. 4 shows a top view of a membrane 406 disposed on a substrate 402
- FIG. 5 shows a cross sectional view of the membrane and substrate, taken along the line 4 - 4 according to embodiments of the present disclosure.
- the substrate 402 may correspond to the transceiver substrate 304 in FIG. 3B .
- a membrane layer 404 may be deposited on the substrate 402 and a cavity 408 may be formed to remove a portion of the substrate 402 , to thereby form the membrane 406 that may vibrate relative to the substrate 402 in the vertical direction.
- the cavity 408 may be formed by conventional wafer processing techniques, such as etching.
- the substrate 402 may be formed of the same material as the membrane layer 404 .
- the substrate 402 may be formed of a different material from the membrane layer 404 . It is noted that the cavity 408 may be formed after the other components, such as top conductor ( 812 in FIG. 8 ), of the piezoelectric element is formed.
- the membrane 406 has a circular projection area.
- the membrane 406 may have other suitable geometrical shape.
- FIG. 6 shows a top view of a bottom electrode 602 disposed on the membrane layer 404 and arranged over the membrane 406 according to embodiments of the present disclosure.
- FIG. 7 shows a top view of a piezoelectric layer 706 disposed on the bottom electrode 602 according to embodiments of the present disclosure.
- the piezoelectric layer 706 may have the similar projection area as the bottom electrode 602 so that the piezoelectric layer 706 may cover the entire portion of the bottom electrode 602 .
- FIG. 8 shows a top view of a piezoelectric element according to embodiments of the present disclosure.
- a top electrode 808 may be disposed on the piezoelectric layer 706 and arranged over the membrane 406 .
- a conductor 812 may be disposed on and electrically coupled to the top electrode 808 , while conductors 810 and 811 may reach the bottom electrode 602 through one or more vias 814 .
- the top electrode 808 , the piezoelectric layer 706 and the bottom electrode 602 may form a two terminal piezoelectric element and the membrane 406 may vibrate when an electrical voltage is applied across the top and bottom electrodes.
- electrical charge may be developed in the top and bottom electrodes when the membrane is deformed by a pressure wave during a receive mode/process.
- FIG. 9 shows a schematic diagram of a piezoelectric element 900 according to embodiments of the present disclosure.
- a piezoelectric layer 910 may be disposed between a first electrode (X) 906 and a second electrode (O) 904 .
- the first electrode (X) 906 may be connected to a ground or a DC bias via the conductor (X) 908 and the second electrode (O) 904 may be connected to an electrical circuit (not shown in FIG. 9 ) through a signal conductor (O) 902 .
- the piezoelectric element 800 in FIG. 8 is an exemplary implementation of the piezoelectric element 900 and the piezoelectric element 900 may be disposed on a membrane layer (such as 404 in FIG. 5 ).
- the piezoelectric layer is thick, approaching around 100 ⁇ m and typically an AC voltage of +100 to ⁇ 100 V across the piezoelectric layer is required to create an ultrasonic pressure wave of sufficient strength to enable medical imaging.
- the frequency of this AC drive signal is typically around the resonating frequency of the piezoelectric structure, and typically above 1 MHz for medical imaging applications.
- the power dissipated in driving the piezoelectric element is proportional to C*V 2 , where C is capacitance of the piezoelectric element and V is the maximum voltage across the piezoelectric layer.
- multiple piezoelectric lines are driven together with somewhat different phase delays to focus the pressure waves or to steer a propagation direction of the pressure waves.
- the simultaneous drive of multiple piezoelectric lines causes the temperature at the surface of the piezoelectric elements to rise. In general, it is highly desirable not to exceed a certain threshold temperature, so as not to injure the subject being imaged. This limits the number of lines that can be driven and the time period for which they can be driven.
- the piezoelectric layer 910 is much thinner, approximately 1 to 2 ⁇ m thick, compared to the conventional bulk piezoelectric elements. In embodiments, this large reduction in thickness may enable the use of lower voltage drive signals for the piezoelectric element 900 , where the voltage is lowered approximately by the amount by which the thickness of the piezoelectric layer 910 is lowered to maintain the similar electric field strength. For example, in embodiments, the voltage potential across the two electrodes 904 and 906 may range from around 1.8 V to 12.6 V peak to peak. The capacitance of the piezoelectric element 900 may increase due to the reduction in thickness of the piezoelectric layer 910 for similar piezoelectric material.
- the capacitance increases by a factor of 10 and the power dissipation decreases by a factor of 10.
- This reduction in power dissipation also reduces heat generation and temperature rise in the piezoelectric element.
- the temperature of the pMUT surface may be lowered.
- more pMUT elements may be driven simultaneously to illuminate the larger target area, compared to the conventional piezoelectric elements.
- a target area may be scanned with multiple emissions using different steering angles and the obtained image data may be combined to obtain a higher quality image.
- the ability to drive more piezoelectric elements simultaneously may allow more coverage of the transducer aperture per emission, minimizing the number of emissions needed to cover the entire aperture, thus increasing frame rates.
- a frame rate measures how many times a target is imaged per minute. It is desirable to image at a high frame rate, especially when tissue motion is involved since the moving tissue may make the image blurry.
- the imager 120 that operates at a higher frame rate may be able to generate images of enhanced quality, compared to the conventional bulk piezoelectric elements.
- image quality may be improved by compounding several frames of images into one resultant lower noise frame.
- this averaging technique may be feasible to enhance the image quality.
- the synthetic aperture method of ultrasound imaging may be used to allow compounding of images.
- the various frames of images may also be with different steering angles or from orthogonal steering directions to better view the target.
- FIG. 10A shows a schematic diagram of a piezoelectric element 1000 according to embodiments of the present disclosure.
- FIG. 10B shows a symbolic representation of the piezoelectric element 1000 in FIG. 10A .
- the piezoelectric element 1000 is similar to the piezoelectric element 900 , with the difference that the piezoelectric element 1000 has more than two electrodes.
- the piezoelectric element 1000 may include: a top electrode (O) 100 , a first bottom electrode (X) 1006 ; a second bottom electrode (T) 1012 ; a piezoelectric layer 1010 disposed between the top and bottom electrodes; and three conductors 1002 , 1008 and 1014 that are electrically coupled to the bottom and top electrodes 1004 , 1006 and 1012 , respectively.
- top and bottom merely refer to two opposite sides of the piezoelectric layer, i.e., the top electrode is not necessarily disposed over the bottom electrode.
- the piezoelectric layer 1010 may include at least one of PZT, PZT-N, PMN-Pt, AlN, Sc—AlN, ZnO, PVDF, and LiNiO 3 .
- FIG. 10C shows a schematic cross sectional diagram of the piezoelectric element 1000 according to embodiments of the present disclosure.
- the piezoelectric element 1000 may be disposed on a membrane layer 1034 that is supported by a substrate 1030 .
- a cavity 1032 may be formed in the substrate 1030 to define a membrane.
- the membrane layer 1034 may be formed by depositing SiO 2 on the substrate 1030 .
- the piezoelectric element 1000 may include a piezoelectric layer 1010 and a first electrode (O) 1002 that is electrically connected to a signal conductor (O) 1004 .
- the signal conductor (O) 1004 may be formed by depositing TiO 2 and metal layers on the membrane layer 1034 .
- the piezoelectric layer 1010 may be formed by the sputtering technique or by the Sol Gel process.
- a second electrode (X) 1006 may be grown above the piezoelectric layer 1010 and electrically connected to a second conductor 1008 .
- a third electrode (T) 1012 may be also grown above the piezoelectric layer 1010 and disposed adjacent to the second conductor 1012 but electrically isolated from the second conductor (X) 1008 .
- the second electrode (X) 1006 and third electrode (T) 1012 may be formed by depositing one metal layer on the piezoelectric layer 1010 and patterning the metal layer.
- the projection areas of the electrodes 1002 , 1006 and 1012 may have any suitable shape, such as square, rectangle, circle, and ellipse, so on.
- the first electrode (O) 1002 may be electrically connected to the conductor (O) 1004 using a metal, a via and interlayer dielectrics. In embodiments, the first electrode (O) 1002 may be in direct contact with the piezoelectric layer 1010 .
- the third conductor (T) 1014 may be deposited or grown on the other side of the piezoelectric layer 1010 with respect to the first electrode (O) 1002 .
- FIG. 10D shows a schematic diagram of a piezoelectric element 1030 according to embodiments of the present disclosure.
- the piezoelectric element 1030 may include two sub piezoelectric elements (or shortly sub elements) 1031 - 1 and 1031 - 2 .
- each sub element may be a three terminal device, i.e. it may have one top electrode 1032 - 1 (or 1032 - 2 ), two bottom electrodes 1034 - 1 (or 1034 - 2 ) and 1036 - 1 (or 1036 - 2 ), and one piezoelectric layer 1035 - 1 (or 1035 - 2 ).
- the top electrode 1032 - 1 may be electrically connected to the top electrode 1032 - 2 by a common conductor (O) 1031
- the first bottom electrode (X) 1034 - 1 may be electrically connected to the first bottom electrode (X) 1034 - 2 by a common conductor (X) 1038
- the second bottom electrode (T) 1036 - 1 may be electrically connected to the second bottom electrode (T) 1036 - 2 by a common conductor (T) 1040
- the piezoelectric element 1030 may be disposed on one membrane or each sub element may be disposed on a separate membrane.
- the conductor (O) 1032 - 1 may be electrically connected to the electrode (O) 1031 , using metals, vias, interlayer dielectrics (ILD), so on, in the similar manner as the piezoelectric element illustrated in FIGS. 12-16 .
- the conductor (X) 1038 and the conductor (T) 1040 may be all grounded (or connected to a DC bias) during active operation of the imager.
- the electrodes (O) 1032 - 1 and 1032 - 2 may be driven by a common transmit driver circuit and a common electrical signal, typically a signal waveform around the center frequency of the transducer. For example, if the center frequency is 2 MHz, a sinusoidal waveform or square waveform at 2 MHz is applied to the piezoelectric element 1030 . This waveform may cause the piezoelectric element 1030 to resonate at 2 MHz and send out a pressure wave, such as 122 , from the surface of the transducer.
- the pressure wave may be reflected from the target organ to be imaged.
- the reflected pressure wave may hit the piezoelectric element 1030 which is now connected to a signal receiver.
- the pressure wave may be converted to the electrical charge in the piezoelectric element 1030 by the piezoelectric layers 1035 - 1 and 1035 - 2 .
- this charge may be signal processed by amplifiers, filters and eventually digitized by an A/D converter (not shown in FIG. 10D ), followed by digital decimators with the data eventually interfaced to FPGAs or Graphical Processing Units (GPUs). These processed signals from multiple piezoelectric elements may be then reconstructed into images.
- the signal waveform driving the transmit driver can also be a frequency varying signal or a phase varying signal or other complex coded signals, such as chirps or Golay codes
- FIG. 10E shows a schematic diagram of a piezoelectric element 1050 according to embodiments of the present disclosure.
- the piezoelectric element 1050 may include two sub elements 1051 - 1 and 1051 - 2 .
- each sub element may be a two terminal device, i.e. it may have one top electrode 1052 - 1 (or 1052 - 2 ), one bottom electrode 1054 - 1 (or 1054 - 2 ), and one piezoelectric layer 1056 - 1 (or 1056 - 2 ).
- the top electrode (O) 1052 - 1 may be electrically connected to the top electrode (O) 1052 - 2 by a common conductor (O) 1051
- the bottom electrode (X) 1054 - 1 may be electrically connected to the bottom electrode (X) 1054 - 2 by a common conductor (X) 1058
- the piezoelectric element 1050 may be disposed on one membrane or each sub element may be disposed on a separate membrane.
- FIG. 10F shows a schematic diagram of a piezoelectric element 1070 according to embodiments of the present disclosure.
- FIG. 10G shows a bottom view of the piezoelectric element 1070 according to embodiments of the present disclosure.
- the piezoelectric element 1070 may include: a top electrode (O) 1074 , a first bottom electrode (X) 1080 ; a second bottom electrode (T) 1076 ; a piezoelectric layer 1075 disposed between the top and bottom electrodes; and three conductors 1072 , 1078 and 1082 that are electrically coupled to the bottom and top electrodes 1074 , 1076 and 1080 , respectively.
- the conductors are not shown.
- each of the first and second bottom electrodes has an annular shape and the second bottom electrode (X) 1076 surrounds the first bottom electrode (T) 1080 .
- FIG. 10H shows a schematic diagram of a piezoelectric element 1085 according to embodiments of the present disclosure.
- the piezoelectric element 1085 may utilize transverse mode of operation and include: a substrate 1091 , a membrane 1090 secured to the substrate at one end; a bottom electrode (O) 1092 that is electrically coupled to a conductor 1089 ; a piezoelectric layer 1088 ; and a top electrode 1086 that is electrically coupled to a conductor 1087 .
- the membrane 1090 may be secured to the substrate 1091 at one end so as to vibrate in the transverse mode, as indicated by an arrow 1093 , i.e., the piezoelectric element may operate in the transverse mode.
- the piezoelectric element 1085 may have any suitable number of top electrodes. Also, it is noted that more than one piezoelectric element may be installed on the membrane 1090 . It is further noted that the substrate 1091 and membrane 1090 may be formed of one monolithic body and the membrane is formed by etching the substrate.
- FIG. 11 shows a schematic diagram of a piezoelectric element 1100 according to embodiments of the present disclosure.
- an electrode (O) 1104 may be disposed on the top surface of a piezoelectric layer 1110 and electrically connected to a conductor (O) 1102 that may be connected to an electric circuit.
- the conductor (T 1 ) 1108 , conductor (T 2 ) 1114 and conductor (X) 1118 may be connected to the bottom electrode (T 1 ) 1106 , electrode (T 2 ) 1112 and electrode (X) 1116 , respectively.
- the electrode (T 1 ) 1106 , the electrode (X) 1116 and the electrode (T 2 ) 1112 may be disposed on the bottom surface of the piezoelectric layer 1110 .
- the piezoelectric element 1100 may be disposed on one membrane or three separate membranes.
- FIGS. 10A-11 show piezoelectric elements (or sub elements) that each have either two terminal (O and X) or three terminals (O, X, and T) or four terminals (O, X, T 1 and T 2 ).
- a piezoelectric element may have more than four terminals.
- a piezoelectric element may have top bottom (O) electrode and more than three bottom electrodes.
- FIG. 12-16 show steps for fabricating an exemplary piezoelectric element that has four terminals according to embodiments of the present disclosure.
- FIG. 12 show top view of a membrane 1206 , which may be formed by forming a membrane layer 1204 on a substrate 1202 , and forming a cavity 1208 in the substrate.
- FIG. 13 shows a cross sectional view of the structure in FIG. 12 , taken along the line 12 - 12 .
- the membrane 1204 may be deposited by a suitable wafer processing technique.
- FIG. 14 shows a top view of a layer structure formed on the membrane layer 1204 and FIG. 15 shows a cross sectional view of the layer structure in FIG. 14 , taken along the line 14 - 14 , according to embodiments of the present disclosure.
- three top electrodes 1223 , 1224 - 1 , and 1224 - 2 , a piezoelectric layer 1220 , and a bottom electrode 1222 may be formed on the membrane layer 1204 .
- the top electrodes 1223 , 1224 - 1 , and 1224 - 2 , piezoelectric layer 1220 , and bottom electrode 1222 may be deposited by suitable wafer processing techniques, such as deposition, sputtering, patterning so on.
- FIG. 16 shows a top view of a piezoelectric element 1600 according to embodiments of the present disclosure.
- three conductors 1620 , 1622 - 1 , and 1622 - 2 may be electrically coupled to the electrodes 1223 , 1224 - 1 , and 1224 - 2 , respectively.
- the conductors (O) 1610 may be electrically coupled to the bottom electrode 1222 through one or more vias 1614 .
- electrical grounds and source planes may be reached to the bottom electrode 1222 through the vias 1614 and the conductors (O) 1610 .
- each of the conductors 1620 , 1622 - 1 , and 1622 - 2 may be connected to the ground or a DC bias voltage.
- the conductor 1620 may be connected to the ground or a first DC bias voltage
- the conductors 1622 - 1 and 1622 - 2 may be connected to the ground or a second DC bias voltage.
- FIG. 17 shows dipole orientations of a piezoelectric material before, during and after the poling process according to embodiments of the present disclosure.
- the individual dipole moments are not aligned.
- the dipole moments may be aligned to point the same direction.
- the dipole moments may remain fairly aligned, although there may still be some elements of random direction.
- the poling process may be performed by putting the piezoelectric material in a constant electric field at a high temperature to thereby force the dipoles to align.
- the piezoelectric element 1000 in FIG. 10A may be poled so that the portions of the piezoelectric layer over the electrode (X) 1006 and electrode (T) 1012 may be poled in opposite directions, as shown, for example, in FIG. 10B where the portion of the piezoelectric layer 1010 under the electrode (X) 1006 is poled in a first direction and the portion of the piezoelectric layer 1010 under the electrode (T) 1012 is poled in a second direction that is opposite the first direction.
- This type of poling may result in boosted pressure output for the same transmit voltage, compared to the pressure output that would be obtained using the one poling direction configuration. Also, in embodiments, this type of poling may improve the receive sensitivity, where the reflected pressure waves may be differentially boosted to create a larger charge output, compared to the one poling direction configuration.
- FIG. 17B shows a flow chart of an illustrative process for poling a piezoelectric element 1600 according to embodiments of the present disclosure.
- the piezoelectric element 1600 may be mounted inside a high temperature chamber (step 1728 ) and the bottom electrode 1222 may be coupled to the ground (step 1722 ), while the first top electrode 1224 - 1 (or 1224 - 2 ) may be coupled to a high positive voltage, such as 15 V, (step 1724 ) and the second top electrode 1223 may be coupled to a high negative voltage, such as ⁇ 15 V, (step 1726 ).
- the piezoelectric element 1600 may be subject to a high temperature inside the chamber for extended period of time (step 1728 ).
- the portions of the piezoelectric layer 1220 under the two electrodes 1224 - 1 and 1224 - 2 may be polarized in the same or opposite direction to that of the portion of the piezoelectric layer 1220 under the electrodes 1223 .
- poling may be implemented by application of high voltages across the electrodes at high temperature, typically 150° C., for 30 minutes for certain piezoelectric materials. For example, for a 1 ⁇ m thick piezoelectric layer, +15 V from the signal electrode to the T electrode and ⁇ 15V from the signal electrode to the X electrode may be applied.
- each of the X and T electrodes may be grounded or tied to a non-zero DC bias voltage while the conductor (O) 1610 may be connected to an ASIC chip so as to be driven by a transmit driver during the transmit operation or may be connected to an LNA (such as 1811 in FIG. 18A ) in the ASIC chip during the receive operation.
- a DC bias voltage may improve the sensitivity of the piezoelectric element 1600 .
- FIG. 18A shows an imaging assembly 1800 according to embodiments of the present disclosure.
- the imaging assembly 1800 may include: a transceiver substrate 1802 (which may be similar to the transceiver tile 210 ); and an ASIC chip 1804 electrically coupled to the transceiver substrate.
- the transceiver substrate 1802 may include one or more piezoelectric elements 1806 , where each of the piezoelectric element may be disposed on one or more membranes. In embodiments, more than one piezoelectric element may be disposed on one membrane.
- poling of the piezoelectric layer may be performed after the transceiver substrate 1802 is interconnected to the ASIC chip 1804 .
- the ASCI 1804 may be replaced by a suitable substrate that includes multiple circuits for driving the piezoelectric elements 1806 in the transceiver substrate 1802 .
- poling may be performed on the transceiver tile/substrate 1802 after the transceiver substrate is 3D interconnected to the ASIC chip 1804 .
- the conventional piezoelectric elements it is difficult to perform the poling process on a transceiver tile after the transducer tile is coupled to the circuits for driving the piezoelectric elements. It is due to the fact that poling requires application of high voltages to the circuits for controlling the piezoelectric elements and the high voltages may damage the circuits.
- the poling may be performed on the transducer substrate 1802 that is already integrated with the ASIC chip 1804 .
- the ASIC chip 1804 may enable application of desired voltages on all first electrodes of the piezoelectric elements and high voltages may be applied to all second or additional electrodes.
- each of the piezoelectric elements 1806 a - 1806 n may have two or more electrodes and these electrodes may be connected to drive/receive electronics housed in the ASIC chip 1804 .
- each piezoelectric element e.g. 1806 a
- the conductor 1810 a may be electrically coupled to a DC bias (X) 1832 a or the ground
- the conductor (T) 1812 a may be coupled to a DC bias (T) 1834 a or the ground.
- the ASIC chip 1804 may include one or more circuits 1842 a - 1842 n that are each electrically coupled to one or more piezoelectric elements 1806 a - 1806 n ; and one control unit 1840 for controlling the circuits 1842 a - 1842 n .
- each circuit e.g. 1842 a
- the switch 1816 a may connect the transmit driver 1813 a to the piezoelectric element 1806 a so that a signal is transmitted to the top electrode of the piezoelectric element 1806 a .
- the switch 1816 a may connect the amplifier 1811 a to the piezoelectric element 1806 a so that a signal is transmitted from the top electrode of the piezoelectric element 1806 a to the amplifier 1811 a.
- the transmit driver 1813 a may include various electrical components. However, for brevity, the transmit driver 1813 a is represented by one driver. But, it should be apparent to those of ordinary skill in the art that the transmit driver may include a more complex driver with many functions. Electrical components for processing the received signals may be connected to the amplifier 1811 a , even though only one amplifier 1811 a is shown in FIG. 18A .
- the amplifier 1811 a may be a low noise amplifier (LNA).
- the circuit 1842 n may have the same or similar structure as the circuit 1842 a.
- all of the DC biases (X) 1832 a - 1832 n may be connected to the same DC bias or the ground, i.e., all of the conductors (X) 1810 a - 1810 n may be connected to a single DC bias or the ground.
- all of the DC biases (X) 1834 a - 1834 n may be connected to the same DC bias or a different DC bias, i.e., all of the conductors (T) 1812 a - 1812 n may be connected to a single DC bias or the ground.
- the conductors (X, T and O) 1810 , 1812 , and 1814 may be connected to the ASIC chip 1804 using an interconnect technology—for instance, copper pillar interconnects or bumps (such as 1882 in FIG. 18B ), as indicated by an arrow 1880 .
- the circuitry components in the ASIC chip 1804 may communicate outside the ASIC chip 1804 using an interconnect 1830 .
- the interconnect 1830 may be implemented using bonding wires from pads on the ASIC chip 1804 to another pad outside the ASIC chip.
- other types of interconnects, such as bump pads or redistribution bumps on the ASIC chip 1804 may be used in addition to wire bonded pads.
- the LNAs 1811 included in the circuits 1842 may be implemented outside the ASIC chip 1804 , such as part of a receive analog front end (AFE).
- AFE receive analog front end
- a LNA may reside in the ASIC chip 1804 and another LNA and programmable gain amplifier (PGA) may reside in the AFE.
- the gain of each LNA 1811 may be programmed in real time, allowing the LNA to be part of a time gain compensation function (TGC) needed for the imager.
- TGC time gain compensation function
- the LNAs 1811 may be built using low voltage transistor technologies and, as such, may be damaged if they are exposed to high transmit voltages that the conventional transducers need. Therefore in the conventional systems, a high voltage transmit/receive switch is used to separate the high transmit voltages from the low voltage receive circuitry. Such a switch may be large and expensive, use High Voltage (HV) processes, and degrade the signal sent to LNA. In contrast, in embodiments, low voltages may be used, and as such, the high voltage components of the conventional system may not be needed any more. Also, in embodiments, by eliminating the conventional HV switch, the performance degradation caused by the conventional HV switch may be avoided.
- HV High Voltage
- the piezoelectric elements 1806 may be connected to the LNAs 1811 during the receive mode by the switches 1816 .
- the LNAs 1811 may convert the electrical charge in the piezoelectric elements 1806 generated by the reflected pressure waves exerting pressure on the piezoelectric elements, to an amplified voltage signal with low noise.
- the signal to noise ratio of the received signal may be among the key factors that determine the quality of the image being reconstructed. It is thus desirable to reduce inherent noise in the LNA itself.
- the noise may be reduced by increasing the transconductance of the input stage of the LNAs 1811 , such as using more current in the input stage. The increase in current may cause the increase in power dissipation and heat.
- pMUTs 1806 may be operated with low voltages and be in close proximity to the ASIC chip 1804 , and as such, the power saved by the low voltage pMUTs 1806 may be utilized to lower noise in the LNAs 1811 for a given total temperature rise acceptable, compared to conventional transducers operated with high voltages.
- FIG. 18B shows a schematic diagram of an imaging assembly 1850 according to embodiments of the present disclosure.
- the transceiver substrate 1852 and ASIC chip 1854 may be similar to the transceiver substrate 1802 and ASIC chip 1804 , respectively.
- the electronics for driving piezoelectric transducers is typically located far away from the piezoelectric transducers and are connected to the piezoelectric transducers using a coax cable.
- the coax cable increases parasitic loading, such as additional capacitance, on the electronics, and the additional capacitance causes loss in critical performance parameters, such as increase in noise and loss of signal power.
- additional capacitance causes loss in critical performance parameters, such as increase in noise and loss of signal power.
- the transmit driver or drivers (or equivalently circuits) 1862 a - 1862 n may be connected directly to piezoelectric elements (or equivalently pixels) 1856 a - 1856 n+i using a low impedance three dimensional (3D) interconnect mechanism (as indicated by an arrow 1880 ), such as Cu pillars or solder bumps 1882 , or wafer bonding or similar approaches or a combination of such techniques.
- a low impedance three dimensional (3D) interconnect mechanism as Cu pillars or solder bumps 1882 , or wafer bonding or similar approaches or a combination of such techniques.
- the circuits 1862 upon integrating the transceiver substrate 1852 to the ASIC chip 1854 , the circuits 1862 may be located less than 100 ⁇ m vertically (or so) away from the piezoelectric elements 1856 .
- any conventional device for impedance matching between driver circuits 1862 and piezoelectric elements 1856 may not be required, further simplifying design and increasing power efficiency of the imaging assembly 1800 .
- Impedance of the circuits 1862 may be designed to match the requirement of the piezoelectric elements 1856 .
- each of the piezoelectric elements 1806 a - 1806 n may be electrically connected to a corresponding one of the circuits 1842 a - 1842 n located in the ASIC chip 1804 . In embodiments, this arrangement may allow the imager to generate three-dimensional images.
- each of the piezoelectric elements 1856 a - 1856 m may have three leads represented by X, T, and O. The leads from each of the piezoelectric elements may be electrically connected to a corresponding one of the circuits 1862 a - 1862 m located in the ASIC chip 1854 by the interconnect means 1882 .
- a line of piezoelectric elements such as 1856 n+ 1- 1856 n+i may be electrically coupled to one common circuit 1862 n .
- the transmit driver circuit 1862 n may be implemented with one transmit driver.
- the transmit driver circuit 1862 n may be implemented with multilevel drivers to facilitate various imaging modes.
- the ASIC chip 1854 may have any suitable number of circuits that are similar to the circuit 1862 n .
- the control unit 1892 may have capability to configure the piezoelectric elements, either horizontally or vertically in a two dimensional pixel array, configure their length and put them into transmit or receive or poling mode or idle mode.
- the control unit 1892 may perform the poling process after the transceiver substrate 1852 is combined with the ASIC chip 1854 by the three dimensional integration technique 1882 .
- the transmit driver circuit 1843 may be implemented with multilevel drive as shown in FIG. 34 , where the transmit driver output may have more than 2 output levels. FIG.
- the transmit driver can also be a 2 level driver with drive signal as shown in FIG. 33 .
- lead lines 1882 a - 1882 n may be signal conductors that are used to apply pulses to the electrodes (O) of the piezoelectric elements 1856 .
- the lead lines 1884 a - 1884 n , 1886 a - 1886 n , and 1888 a - 1888 n may be used to communicate signals with the piezoelectric elements 1856 a - 1856 n +i. It is noted that other suitable number of lead lines may be used to communicate signals/data with the imaging assembly 1800 .
- each of the lead lines (X) 1886 and lead lines (T) 1888 may be connected to the ground or a DC bias terminal.
- the digital control lead 1894 may be a digital control bus and include one or more leads that are needed to control and address the various functions in the imaging assembly 1850 . These leads, for example, may allow programmability of the ASIC chip 1854 using communication protocols, such as Serial Peripheral Interface (SPI) or other protocols.
- SPI Serial Peripheral Interface
- the piezoelectric elements 1806 (or 1856 ) and the control electronics/circuits 1842 (or 1862 ) may be developed on the same semiconductor wafer.
- the transceiver substrate 1802 (or 1852 ) and ASIC chip 1804 (or 1854 ) may be manufactured separately and combined to each other by a 3D interconnect technology, such as metal interconnect technology using bumps 1882 .
- the interconnect technology may eliminate the low yield multiplication effect, to thereby lower the manufacturing cost and independently maximize the yield of components.
- lead lines 1862 a - 1862 n may be signal conductors that are used to apply pulses to the electrodes (O) of the piezoelectric elements 1806 .
- the lead lines 1864 a - 1864 n , 1866 a - 1866 n , and 1868 a - 1868 n may be used to communicate signals with the piezoelectric elements 1806 a - 1806 n . It is noted that other suitable number of lead lines may be used to communicate signals/data with the imaging assembly 1800 .
- the LNAs 1811 may operate in a charge sensing mode and each have a programmable gain that may be configured in real time to provide gain compensation.
- one or more temperature sensors may be installed in the imager 120 .
- the ASIC may receive temperature data from the temperature sensor(s) and, using the temperature data, adjust the imaging frame rate or a signal-to-noise ratio of the LNAs 1811 .
- each piezoelectric element 1904 may be a two terminal piezoelectric element, where the piezoelectric element is symbolically represented by two electrodes O and X.
- the circuit element 1908 may include electrical components for driving the corresponding piezoelectric element 1904 , where the circuit element 1908 is symbolically represented by a transmit driver.
- an imaging element 1910 may include a piezoelectric element 1904 and a circuit element 1908 , and the piezoelectric element 1904 may be electrically connected to the circuit element 1908 by two bumps.
- FIG. 19B-1 shows a top view of a transceiver substrate 1911 and an ASIC chip 1913
- FIG. 19B-2 shows a side view of imaging assembly 1915 according to embodiments of the present disclosure.
- the imaging assembly 1915 may be similar to the imaging assembly 1901 , with the difference that two sub piezoelectric elements are electrically coupled to two sub circuit elements by three bumps.
- the piezoelectric element 1912 includes two sub piezoelectric elements, each sub piezoelectric element may be a two terminal piezoelectric element, and the X electrodes of the two sub piezoelectric elements may be electrically coupled to each other.
- each O electrode of the sub piezoelectric element may be electrically coupled to a transmit driver of the corresponding sub circuit element 1914 and the X electrodes of the two sub piezoelectric elements may be electrically coupled to a common electrical terminal of the circuit element 1914 .
- the piezoelectric element 1912 may be interconnected to the circuit element 1914 by three bumps.
- FIG. 19C shows a top view of a transceiver substrate 1920 and an ASIC chip 1924 according to embodiments of the present disclosure.
- the transceiver substrate 1920 may be similar to the transceiver substrate 1902 , with the difference that three sub piezoelectric elements are electrically coupled to three sub circuit elements by four bumps.
- the piezoelectric element 1922 includes three sub piezoelectric elements, each sub piezoelectric element may be a two terminal piezoelectric element, and the X electrodes of the three sub piezoelectric elements may be electrically coupled to each other.
- each O electrode of the sub piezoelectric element may be electrically coupled to a transmit driver of the corresponding sub circuit element and the X electrodes of the three sub piezoelectric elements may be electrically coupled to a common electrical terminal of the circuit element 1926 .
- the piezoelectric element 1922 may be interconnected to the circuit element 1926 by four bumps.
- FIG. 19D shows a top view of a transceiver substrate 1930 and an ASIC chip 1934 according to embodiments of the present disclosure.
- the transceiver substrate 1930 may be similar to the transceiver substrate 1902 , with the difference that each piezoelectric element 1932 may be electrically coupled to a circuit element 1936 by three bumps.
- the O electrode may be coupled to a transmit driver of the circuit element 1936 by a bump, and the X and T electrodes may be coupled to the circuit element 1936 by two bumps.
- FIG. 19E shows a top view of a transceiver substrate 1940 and an ASIC chip 1944 according to embodiments of the present disclosure.
- the piezoelectric element 1942 may include two sub piezoelectric elements, each sub piezoelectric element may be a three terminal piezoelectric element, and the X electrodes of the two sub piezoelectric elements may be electrically coupled to each other.
- each O electrode of the sub piezoelectric element may be electrically coupled to a transmit driver of the corresponding sub circuit element by a bump and the X electrodes of the two sub piezoelectric elements may be electrically coupled to the circuit element 1946 by a bump and each T electrode of the sub piezoelectric element may be electrically coupled to the circuit element 1946 by a bump.
- the piezoelectric element 1942 may be interconnected to the circuit element 1946 by five bumps.
- FIG. 19F shows a top view of a transceiver substrate 1950 and an ASIC chip 1954 according to embodiments of the present disclosure.
- the piezoelectric element 1952 may include two sub piezoelectric elements, each sub piezoelectric element may be a three terminal piezoelectric element, the X electrodes of the two sub piezoelectric elements may be electrically coupled to each other, and T electrodes of the two sub piezoelectric elements may be electrically coupled to each other.
- each O electrode of the sub piezoelectric element may be electrically coupled to a transmit driver of the corresponding sub circuit element by a bump and the X electrodes of the two sub piezoelectric elements may be electrically coupled to the circuit element 1956 by a bump.
- the T electrodes of the two sub piezoelectric elements may be electrically coupled to the circuit element 1956 by a bump.
- the piezoelectric element 1952 may be interconnected to the circuit element 1956 by four bumps.
- FIG. 19G shows a top view of a transceiver substrate 1960 and an ASIC chip 1964 according to embodiments of the present disclosure.
- the piezoelectric element 1962 may include two sub piezoelectric elements, each sub piezoelectric element may be a three terminal piezoelectric element, the O electrodes of the two sub piezoelectric elements may be electrically coupled to each other, the X electrodes of the two sub piezoelectric elements may be electrically coupled to each other, and the T electrodes of the two sub piezoelectric elements may be electrically coupled to each other.
- the piezoelectric element 1962 may be interconnected to the circuit element 1966 by three bumps.
- FIG. 20 shows a schematic diagram of an m ⁇ n array 2000 of piezoelectric elements 2002 - 11 - 2002 - mn according to embodiments of the present disclosure.
- each piezoelectric element may be a two terminal piezoelectric element (such as piezoelectric element 900 in FIG. 9 ) and have an electrode (O) (e.g. 2003 - 11 ) electrically coupled to a conductor (O) (e.g. 2004 - 11 ) and an electrode (X) electrically connected to ground or a DC bias voltage via a common conductor (X) 2007 .
- each signal conductor (O) may be managed independently by a circuit element (such as 1908 ).
- each conductor (O) e.g.
- the array 2000 may be disposed on a transceiver substrate and electrically coupled to an ASIC chip by interconnection mechanism, such as m ⁇ n+1 bumps, as discussed in conjunction with FIGS. 19A-19G .
- each piezoelectric element including at least one sub piezoelectric element, can provide unique information in the array.
- each piezoelectric element may have one or more membranes and vibrate in multiple modes and frequencies of the membranes.
- each piezoelectric element 2002 may be driven by pulses that have voltage profiles 3300 and 3400 in FIGS. 33 and 34 .
- the O electrodes in each column may be electrically coupled to a common conductor.
- the circuit elements in the ASIC chip may be electronically controlled so that the O electrodes in each column may be electrically coupled to each other.
- the O electrodes in each column may receive the same electrical pulse through a common transmit driver or per a multiplicity of drivers with identical electrical drive signals during the transmit mode.
- the O electrodes in each column may simultaneously transmit the electrical charge to a common amplifier during the receive mode.
- the piezoelectric element in each column may be operated as a line unit (or equivalently line element).
- FIG. 21 illustrates a schematic diagram of an n ⁇ n array 2100 of piezoelectric elements 2102 - 11 - 2012 - mn according to embodiments of the present disclosure.
- each piezoelectric element may be a three terminal piezoelectric element and include the electrodes O, X, and T.
- the X electrodes e.g. X 11 , X 21 , . . . , Xm 1
- the T electrodes e.g. T 11 , T 21 , . . .
- Tm 1 may be connected column wise in a serial manner and all of the T electrodes (T 11 -Tmn) may be electrically coupled to a common conductor (T) 2108 .
- a column of elements such as 2102 - 11 , 2102 - 21 through 2102 - m 1 when connected together as described in embodiments make up a line element or a column.
- each of the O electrodes 2103 - 11 - 2103 - mn may be electrically coupled to a transmit driver of a corresponding circuit element in an ASIC chip via one of the conductors O 11 -Omn.
- the array 2100 may be disposed on a transceiver substrate and electrically coupled to an ASIC chip by interconnection mechanism, such as m ⁇ n+2 bumps.
- the O electrodes in each column may be electrically coupled to a common conductor.
- the O electrodes in each column may receive the same electrical pulse through a common transmit driver during the transmit mode.
- the O electrodes in each column may simultaneously transmit the electrical charge to a common amplifier during the receive mode.
- the piezoelectric element in each column is operated as a line unit.
- each of the O electrodes in a column may be connected to a dedicated transmit driver, where the input signal of the transmit drivers for all elements in a column are identical, thus creating a substantially identical transmit drive output to appear on all piezoelectric elements during a transmit operation.
- Such a line element is electronically controlled on a per element basis, since each element has it own transmit driver. This has advantages in driving large capacitive line elements, where each element has smaller capacitance and delays in timing can be minimized for elements on a column.
- charge from all elements in a column can be sensed by connecting it to a LNA, as is done by 2D imaging.
- charge for each element is sensed by connecting the O electrodes of each element to a LNA during a receive mode operation.
- FIG. 22 illustrates a schematic diagram of an m ⁇ n array 2200 of piezoelectric elements 2202 - 11 - 2202 - mn according to embodiments of the present disclosure.
- the array 2200 may be similar to the array 2100 , with the differences that the X electrodes (e.g. X 12 -Xm 2 ) in a column may be connected to a common conductor (e.g. 2206 - 1 ) and the T electrodes (e.g. T 12 -Tm 2 ) in a column may be connected to a common conductor (e.g. 2208 - 1 ).
- the X electrodes (or T electrodes) in the same column may have the same voltage potential during operation.
- each of the O electrodes may be electrically coupled to a transmit driver of a corresponding circuit element in an ASIC chip via one of the conductors O 11 -Omn.
- the array 2200 may be disposed on a transceiver substrate and electrically coupled to an ASIC chip by interconnection mechanism, such as m ⁇ n+2n bumps.
- the array 2200 may use more bumps for connecting the T and X electrodes to the ASIC chip.
- an increase in the number of connections for T and X between the ASIC chip and the piezoelectric array may reduce impedance in the X and T conductors when connected in parallel to the ground or DC bias sources and reduce the crosstalk.
- Crosstalk refers to the coupling of signals from an imaging element to another one, and may create interference and reduce the image quality.
- Spurious electrical coupling may be created when any voltage drop due to current flowing in X and T lines appear across a piezoelectric element that ideally should not be exposed to that voltage.
- the X, T, and O electrodes may be locally shorted.
- the idle electrodes have the O electrodes grounded, leaving the X electrodes connected to other X electrodes in the array and the T electrodes connected to other T electrodes in the array.
- FIG. 23 illustrates a schematic diagram of an m ⁇ n array 2300 of piezoelectric elements 2302 - 11 - 2302 - mn according to embodiments of the present disclosure.
- the array 2300 may be similar to the array 2100 , with the difference that each piezoelectric element may be a five terminal piezoelectric element, i.e., each piezoelectric element may include one bottom electrode (O) and four top electrodes (two X electrodes and two T electrodes).
- two X electrodes of each piezoelectric element may be connected column wise in a serial manner and all of the 2m ⁇ n X electrodes may be electrically coupled to a common conductor (X) 2306 .
- X common conductor
- each of the O electrodes may be electrically coupled to a transmit driver of a corresponding circuit element in an ASIC chip via one of the conductors O 11 -Omn.
- the array 2300 may be disposed on a transceiver substrate and electrically coupled to an ASIC chip by interconnection mechanism, such as m ⁇ n+2 bumps.
- FIG. 24 illustrates a schematic of an m ⁇ n array 2400 of piezoelectric elements 2402 - 11 - 2402 - mn according to embodiments of the present disclosure.
- the array 2400 may be similar to the array 2200 , with the differences that each piezoelectric element may be a five terminal piezoelectric element: one bottom electrode (O) and four top electrodes (two X electrodes and two T electrodes).
- the two X electrodes of each piezoelectric element may be electrically connected in a column wise direction to a conductor (e.g. 2406 - 1 ), and the two T electrodes of each piezoelectric element may be electrically connected in a column wise direction to a common conductor (e.g.
- each of the O electrodes may be electrically coupled to a transmit driver of a corresponding circuit element in an ASIC chip via one of the conductors O 11 -Omn.
- the array 2400 may be disposed on a transceiver substrate and electrically coupled to an ASIC chip by interconnection mechanism, such as m ⁇ n+2n bumps.
- FIG. 25 illustrates a schematic diagram of an m ⁇ n array 2500 of piezoelectric elements 2502 - 11 - 2502 - mn according to embodiments of the present disclosure.
- the array 2500 may be similar to the array 2100 in that each piezoelectric element may have one bottom electrode (O) and two top electrodes (T), but have the differences that all of the two top electrodes (T) of the piezoelectric elements along a column (e.g. 2502 - 11 - 2502 - m 1 ) may be electrically connected to a common conductor (e.g. 2508 - 1 ).
- a common conductor e.g. 2508 - 1
- each of the O electrodes may be electrically coupled to a transmit driver of a corresponding circuit element in an ASIC chip via one of the conductors O 11 -Omn.
- the array 2500 may be disposed on a transceiver substrate and electrically coupled to an ASIC chip by interconnection mechanism, such as m ⁇ n+n bumps.
- the piezoelectric elements in each piezoelectric array may be the same or different from each other.
- the projection areas of the two top electrodes of one piezoelectric element 2202 - 11 may have same or different shapes from the projection areas of the two top electrodes of another piezoelectric element 2202 - n 1 .
- FIG. 27 illustrates a schematic diagram of an m ⁇ n array 2700 of piezoelectric elements 2702 - 11 - 2702 - mn according to embodiments of the present disclosure.
- each piezoelectric element may include two signal electrodes (O) and one common electrode (X).
- each signal electrode (O) may be electrically coupled to a transmit driver of a corresponding circuit element of an ASIC chip.
- the piezoelectric element 2702 - 11 may include two signal conductors O 111 and O 112 that may be electrically coupled to two circuit elements in an ASIC chip, respectively, where each signal electrode may develop electrical charge during the receive mode.
- the array 2700 may be disposed on a transceiver substrate and electrically coupled to an ASIC chip by interconnection mechanism, such as 2m ⁇ n+1 bumps. In embodiments, all of the T electrodes in the array 2700 may be electrically coupled to the ground or a DC bias voltage via the common conductor (T) 2708 .
- T common conductor
- the signal conductors (O) in the arrays in FIGS. 20-27 may be electrically coupled to a circuit element, where the circuit element may include a transistor switch that is similar to the switch 1816 in FIG. 18A , i.e., the switch may toggle between the transmit driver and an amplifier during the transmit and receive modes, respectively so that the O electrode may generate pressure wave during the transmit mode and develop electrical charge during the receive mode.
- the circuit element may include a transistor switch that is similar to the switch 1816 in FIG. 18A , i.e., the switch may toggle between the transmit driver and an amplifier during the transmit and receive modes, respectively so that the O electrode may generate pressure wave during the transmit mode and develop electrical charge during the receive mode.
- FIG. 28 shows an exemplary embodiment of an imaging system 2800 according to embodiments of the present disclosure.
- the imaging system 2800 may include an array of piezoelectric elements 2802 - 11 - 2802 - mn and circuit elements for controlling/communicating with the array.
- each of the piezoelectric elements 2802 - 11 - 2802 - mn may include three electrodes; first and second signal (O) electrodes and a T electrode.
- first and second O electrodes in each piezoelectric element refer to the left and right O electrodes of each piezoelectric element in FIG.
- all of T electrodes in the array 2800 may be electrically coupled to the ground or DC bias voltage via the conductor (T) 2808 .
- the first O electrodes of the piezoelectric elements in a column may be electrically coupled to a common conductor (e.g. O 11 ) and the second O electrodes of the piezoelectric elements in the same column may be electrically coupled to another common conductor (e.g. O 12 ).
- each of the first and second signal O electrodes may develop electrical charge that may be processed by a corresponding circuit.
- the first set of conductors O 11 , O 21 , . . . , On 1 may be electrically coupled to the amplifiers 2810 - 1 - 2810 - n , respectively, where the electrical charge developed in a column of the first O electrodes may be transferred to a corresponding amplifier via one of the O conductors.
- the second set of conductors O 12 , O 22 , . . . , On 2 may be electrically coupled to the switches 2812 - 1 - 2812 - n , respectively.
- each switch e.g. 2812 - 1
- a transit driver e.g.
- each switch e.g. 2812 - 1
- a signal amplifier e.g. 2814 - 1
- electrical charge developed in a column of second O electrodes in the piezoelectric elements e.g. 2801 - 11 - 2802 - m 1
- the piezoelectric elements 2802 - 11 - 2802 - mn may be disposed in a transceiver substrate while the switches 2812 - 1 - 2812 - n , transmit drivers 2816 - 1 - 2816 - n , and amplifies 2810 - 1 - 2810 - n and 2814 - 1 - 2814 - n may be disposed in an ASIC chip, where the transceiver substrate may be electrically coupled to the ASIC chip by 2n+1 bumps.
- a column of the first electrodes may be electrically coupled to a common conductor (e.g. O 11 ) and a column of the second electrodes may be electrically coupled to another common conductor (e.g. O 12 ).
- the imaging system 2800 may be operated as a line imager, i.e., each of the first set of conductors O 11 -On 2 may operate as a transmit unit and/or a receive unit during operation.
- the electrical charge developed in a column of the first O electrodes connected to a conductor (e.g. O 11 ) may be transmitted to an amplifier (e.g. 2810 - 1 ), which may be a low noise amplifier.
- each column of the first O electrodes may operate as a receiving line imager.
- the electrical charge developed in a column of the second O electrodes connected to a conductor may be transmitted to a signal amplifier (e.g. 2814 - 1 ), which may be a low noise amplifier, via a switch (e.g. 2812 - 1 ).
- the amplifier may amplify the electrical charge signal and convert the charge signal to an output voltage.
- each column of the second O electrodes may operate as a receiving line imager.
- the electrical signal pulse may be transmitted from the transmit driver (e.g. 2816 - 1 ) to a column of the second O electrodes connected to a conductor (e.g. O 12 ) via a switch (e.g. 2812 - 1 ) so that the set of second O electrodes may generate pressure waves.
- each column of second O electrodes may operate as a transmit line unit.
- the switches 2812 which may be transistor switches, may be set to a neutral position (i.e., they are not coupled to either transmit drivers or amplifiers) during the receive mode. In such a case, only the second set of conductors O 12 , O 22 , . . . , On 2 may operate during the receive mode.
- the transmit driver (e.g. 2816 - 1 ) may send a signal to a column of piezoelectric elements (e.g. 2802 - 11 - 2802 - m 1 ) via a conductor (O 12 ) and simultaneously, an amplifier (e.g. 2810 - 1 ) may receive electrical charge signal from the same column of piezoelectric elements (e.g. 2802 - 11 - 2802 - m 1 ).
- each piezoelectric element (e.g. 2802 - 11 ) in a column may receive a signal from the transmit driver (e.g. 2816 - 1 ) through one conductor (e.g.
- the imaging system 2800 may perform simultaneous transmitting and receiving modes.
- This simultaneous operation of transmitting and receiving modes may be very advantageous in continuous mode Doppler Imaging, where a high blood flow velocity may be imaged, compared to pulsed Doppler Imaging.
- a line unit which refers to a column of O electrodes electrically coupled to a common conductor, may operate as a transmit unit or a receive unit or both.
- electrical signals may be sequentially transmitted to the conductors O 12 , O 22 , . . . , On 2 so that the line elements sequentially generate pressure waves during the transmit mode, and the reflected pressure waves may be processed and combined to generate a two dimensional image of the target organ in the receive mode.
- electrical drive signals may be simultaneously transmitted to the conductors O 12 , O 22 , . . .
- On 2 during the transmit mode and the reflected pressure waves may be processed at the same time using charge generated from conductors O 11 , O 12 to On 1 to simultaneously transmit and receive ultrasound to create a two dimensional image.
- Conductors O 12 -On 2 may also be used to receive charge from the piezoelectric line elements in a receive mode of operation.
- FIG. 29 shows an exemplary embodiment of an imaging system 2900 according to embodiments of the present disclosure.
- the imaging system 2900 includes an array of piezoelectric elements 2902 - 11 - 2902 - mn and each piezoelectric element may include first and second signal (O) electrodes and a T electrode.
- all of the T electrodes in the array may be electrically coupled to one common conductor (T) 2908 ; each row of the first O electrodes may be electrically connected to one of conductors O 1 -Om; and each column of the second O conductors may be electrically connected to a switch 2912 via one of conductors O 12 -On 2 and.
- each of the switches 2912 - 1 - 2912 - n may toggle between a transmit driver (e.g. 2916 - 1 ) and an amplifier (e.g. 2914 - 1 ), which may be a low noise amplifier.
- each of the conductors O 1 -On may be connected to one of the amplifiers 2910 - 1 - 2910 - m , which may be low noise amplifiers.
- a signal may be transmitted from a transmit driver (e.g. 2916 - 1 ) to a column of second O electrodes via a conductor (e.g. O 12 ) so that the column of piezoelectric elements may generate pressure waves as a line unit.
- a transmit driver e.g. 2916 - 1
- a conductor e.g. O 12
- each switch e.g. 2912 - 1
- a corresponding transmit driver e.g. 2916 - 1
- the imaging system 2900 may process the reflected pressure waves in two different methods.
- the amplifiers 2910 - 1 - 2910 - n may receive electric charge signals from the first O electrodes, i.e., each amplifier may receive signals from a row of the first O electrodes.
- This method allows biplane imaging/mode, where for a two dimensional image, the biplane image may provide orthogonal perspectives. Also, this method may provide more than two dimensional imaging capability. The biplane imaging may be helpful for many applications, such as biopsy. It is noted that, in this method, the transmitting and receiving modes may be performed simultaneously.
- the switches 2912 may be toggled to the amplifiers 2914 so that each amplifier may receive and process the electrical charge signals from a corresponding column of the second O electrodes.
- a line unit which refers to a column (or row) of O electrode electrically coupled to an O conductor, may operate as a transmit unit or a receive unit or both.
- the directions may be electronically programmed and electronically adjustable.
- the gain of the amplifiers 2910 and 2914 may be adjustable electronically, where gain control leads are implemented in the amplifiers.
- the length of each line elements i.e., the number of piezoelectric elements in each line element
- this may be achieved by connecting all signal electrodes of every piezoelectric element to corresponding nodes in the ASIC chip and, where the ASIC programs the connection between the signal electrodes of the elements to be connected to each other, transmit drivers or amplifiers as appropriate.
- FIG. 30 shows an embodiment of a piezoelectric element 3000 coupled to a circuit element 3001 according to embodiments of the present disclosure.
- the piezoelectric element 3000 may include: a first sub-piezoelectric element 3021 - 1 and a second sub-piezoelectric element 3021 - 2 .
- the piezoelectric element 3000 may include: a bottom electrode (X) 3002 that is shared by the first and second sub piezoelectric elements and coupled to a conductor (X) 3006 .
- the first sub-piezoelectric element 3021 - 1 may include a signal (O) electrode 3003 that is electrically coupled to the amplifier 3010 via the conductor 3008 .
- the second sub-piezoelectric element 3021 - 2 may include a signal (O) electrode 3004 that is electrically coupled to the switch 3014 via the conductor 3012 .
- a circuit element 3001 may be electrically coupled to the piezoelectric element 3000 and include two amplifiers 3010 and 3016 , such as low noise amplifiers, and a transmit driver 3018 .
- the switch 3014 may have one end connected to the O electrode 3004 through the conductor 3012 and the other end that may toggle between the amplifier 3016 for the receive mode and a transmit driver 3018 for the transmit mode.
- the amplifier 3016 may be connected to other electronics to further amplify, filter and digitize a receive signal, even though an amplifier is used to symbolically represent the electronics.
- the transmit driver 3018 may be a multistage drive and may generate an output with two or more levels of a signaling. The signaling can be unipolar or bipolar.
- the transmit driver 3018 may include a switch interconnecting an input to an output of a driver under electronic control of the driver, which is not explicitly shown In FIG. 30 .
- the signal of the transmit driver 3018 may be pulse width modulated (PWM), where, by controlling the pulse widths on a per element basis, a weighting function may be created on a transmitted ultrasound signal. This may for example perform a windowing function, where the transmit signal is weighted by a window function.
- the weighting coefficients may be achieved by varying the duty cycle of the transmit signal as is done during PWM signaling. This kind of operations may allow for transmit apodization, where the side lobe of a radiated signal are greatly attenuated, allowing for a higher quality image.
- a transceiver array may be disposed in a transceiver substrate and include an n ⁇ n array of the piezoelectric element 3000 and an n ⁇ n array of the circuit elements 3001 may be disposed in an ASIC chip, where each piezoelectric element 3000 may be electrically coupled to a corresponding one of the n ⁇ n array of the circuit elements 3001 .
- the transceiver substrate may be interconnected to the ASIC chip by 3n 2 bumps.
- each column (or row) of piezoelectric element array may be operated a line unit, as discussed in conjunction with FIGS. 28 and 29 .
- each piezoelectric element 3000 of the n ⁇ n array of piezoelectric elements may be coupled with a corresponding one circuit element 3001 of the n ⁇ n array of circuit elements.
- the sub-piezoelectric element 3021 - 1 may be in the receive mode during the entire operational period while the sub-piezoelectric element 3021 - 2 may be in either transmit or receive mode.
- the simultaneous operation of transmit and receive modes may allow the continuous mode Doppler imaging.
- the power levels of the pressure wave generated by the sub-piezoelectric element 3021 - 2 may be changed by using pulse width modulation (PWM) signaling.
- PWM pulse width modulation
- different fast settling power supplies are used for B Mode and various Doppler Mode imaging to allow transmit drive voltages to differ in the 2 cases to for example not create excessive power in Doppler mode.
- the power level may be changed by using the PWM signals on the transmit without using the conventional fast settling power supplies.
- the ground electrodes of the piezoelectric element may also be separated from each other and connected to the ground separately. In embodiments, this independent grounding may reduce the noise and result in faster settling times.
- power transmitted may also be reduced by reducing the height of the transmit columns under electronic control. This again facilitates use of same power supply for both Doppler and B mode and meet power transmission requirements in each mode. This also allows co imaging.
- FIG. 31 shows a circuit 3100 for controlling multiple piezoelectric elements according to embodiments of the present disclosure.
- the circuit 3100 may be disposed in an ASIC chip, where the line (either column or row) of piezoelectric elements that is disposed in a transceiver substrate and the ASIC chip may be interconnected to the transceiver substrate by bumps.
- the circuit 3100 may include an array of circuit elements 3140 - 1 - 3140 - n , where each circuit element may communicate signals with the O and X electrodes of the corresponding piezoelectric element.
- each circuit element may include a first switch (e.g. 3102 - 1 ), a second switch (e.g. 3104 - 1 ), a third switch (e.g. 3106 - 1 ), and a transmit driver (e.g. 3108 - 1 ).
- the output from the transmit driver (e.g. 3108 - 1 ) may be sent to an O electrode of the piezoelectric element via a conductor (e.g. 3110 - 1 ).
- each circuit element may receive a transmit driver (driving) signal 3124 through a conductor 3122 .
- Each second switch e.g.
- the transmit driver (e.g. 3108 - 1 ) may perform logical decode, level shift, buffer the input signal and send the transit signal to the O electrode via the conductor (e.g. 3110 - 1 ).
- the first switch (e.g. 3102 - 1 ) may be turned off.
- the control unit 3150 may decide which piezoelectric elements need to be turned on during the transmit mode. If the control unit 3150 decides not to turn on a second piezoelectric element, the first switch (e.g. 3102 - 2 ) and the second switch (e.g. 3104 - 2 ) may be turned off, while the third switch (e.g. 3106 - 2 ) may be turned on so that the O and X electrodes have the same electrical potential (i.e., there is a net zero volt drive across the piezoelectric layer). In in embodiments, the third switches 3106 may be optional.
- the first switch e.g. 3102 - 1
- the amplifier 3128 may receive electrical charge signal (or, equivalently, sensor signal) 3126 and amplify the sensor signal, where the amplified signal may be further processed to generate an image.
- the second switch e.g. 3104 - 1
- the third switch e.g. 3106 - 1
- the entire array of the circuit element 3140 - 1 - 3140 - n may share a common amplifier 3128 , simplifying the design of the circuit 3100 .
- the X electrodes of the piezoelectric elements may be electrically coupled to the ground or a DC bias voltage via the conductors 3112 - 1 - 3112 - n , where the conductors 3112 - 1 - 3112 - n may be electrically coupled to a common conductor 3152 .
- the circuit 3100 may be coupled to a column of piezoelectric elements (e.g. 2002 - 11 - 2002 - n 1 ) in FIG. 20 .
- a plurality of circuits that are similar to the circuit 3100 may be coupled with the multiple columns of piezoelectric elements in the array in FIG. 20 , and the conductors 3152 may be coupled to a common conductor (such as 2007 in FIG. 20 ).
- the circuit 3100 may control a column of piezoelectric elements in FIGS. 20-27 .
- FIG. 32 shows a circuit 3200 for controlling multiple piezoelectric elements according to embodiments of the present disclosure.
- the circuit 3200 may be disposed in an ASIC chip, where the line (either column or row) of piezoelectric elements that is disposed in a transceiver substrate and the ASIC chip may be interconnected to the transceiver substrate by bumps.
- the circuit 3200 may include an array of circuit elements 3240 - 1 - 3240 - n , where each circuit element may communicate signals with the O, X, and T electrodes of the corresponding piezoelectric element.
- each circuit element may include a first switch (e.g. 3202 - 1 ), a second switch (e.g. 3204 - 1 ), a third switch (e.g. 3206 - 1 ), a fourth switch (e.g. 3207 - 1 ), and a transmit driver (e.g. 3208 - 1 ).
- the output from the transmit driver (e.g. 3208 - 1 ) may be sent to an O electrode of the piezoelectric element via a conductor (e.g. 3210 - 1 ).
- each circuit element may receive a transmit driver (or driving) signal 3224 through a conductor 3222 .
- Each second switch (e.g. 3204 - 1 ), which may be a transistor switch and controlled by a control unit 3250 , may be turned on to transmit the signal 3224 to the transmit driver (e.g. 3208 - 1 ).
- the transmit driver (e.g. 3208 - 1 ) may logically decode the signal, level shift it and buffer, the output signal and send the transmit output signal to the O electrode via the conductor (e.g. 3210 - 1 ).
- the first switch (e.g. 3202 - 1 ) may be turned off.
- the control unit 3250 may decide which piezoelectric elements need to be turned on during the transmit mode. If the control unit 3250 decides not to turn on a second piezoelectric element, the first switch (e.g. 3202 - 2 ) and the second switch (e.g. 3204 - 2 ) may be turned off, while the third switch (e.g. 3206 - 2 ) and the fourth switch (e.g. 3207 - 2 ) may be turned on so that the O and X (and T) electrodes have the same electrical potential (i.e., there is a net zero volt drive across the piezoelectric layer). In in embodiments, the third and fourth switches (e.g. 3206 - 2 and 3207 - 2 may be optional. It is understood that 3 level signaling and a transmit driver that performs that is not shown explicitly. Similarly the connections to X T conductors and switches like 3206 - 2 , 3207 - 2 are shown in a simplified manner.
- the first switch e.g. 3202 - 1
- the amplifier 3228 may amplify the electrical charge (or sensor) signal 3226 , where the amplified signal may be further processed to generate an image.
- the second switch e.g. 3204 - 1
- the third switch e.g. 3206 - 1
- the fourth switch e.g. 3207 - 1
- the entire array of the circuit element 3240 - 1 - 3240 - n may share a common amplifier 3228 , simplifying the design of the circuit 3200 .
- the X electrodes of the piezoelectric elements may be electrically coupled to the ground or a DC bias voltage via the conductors 3212 - 1 - 3212 - n , where the conductors 3212 - 1 - 3212 - n may be electrically coupled to a common conductor 3252 .
- the T electrodes of the piezoelectric elements may be electrically coupled to the ground or a DC bias voltage via the conductors 3213 - 1 - 3213 - n , where the conductors 3213 - 1 - 3213 - n may be electrically coupled to a common conductor 3254 .
- the circuit 3200 may be coupled to a column of piezoelectric elements (e.g. 2102 - 11 - 2102 - n 1 ) in FIG. 21 .
- a plurality of circuits that are similar to the circuit 3200 may be coupled with the multiple columns of piezoelectric elements in the array in FIG. 21 , and the conductors 3252 may be coupled to a common conductor (such as 2106 in FIG. 20 ).
- the conductors 3254 may be coupled to a common conductor (such as 2108 in FIG. 21 ).
- the circuit 3200 may control a column of piezoelectric elements in FIGS. 20-27 .
- conductors are used to electrically couple an electrode to another electrode.
- the electrodes 2006 - 11 - 2006 - m 1 are electrically coupled to a conductor 2007 .
- the conductors in FIGS. 22-32 may be implemented in a variety of methods, such as metal interconnect layers deposited and patterned on the substrate on which the piezoelectric elements are disposed or on a different substrate, such as ASIC, that is connected to the substrate.
- FIGS. 33 and 34 show exemplary waveforms 3300 and 3400 for driving a piezoelectric element during the transmit mode according to embodiments of the present disclosure.
- piezoelectric material may be vulnerable to damages caused by dielectric aging, and the aging may be delayed or avoided by using unipolar drive signals.
- the waveforms 3300 and 3400 represent the voltage potential between O and X electrodes and/or between O and T electrodes.
- the waveforms may be unipolar in nature and may be a two level step waveform 3300 (i.e., the transmit driver, such as 2812 , 2912 , 3018 , 3108 , 3208 , etc.
- the multistep waveform 3400 is a unipolar transmit driver) or a multilevel (such as three level) step waveform 3400 .
- the actual voltage amplitude may vary typically from 1.8 V to 12.6 V.
- the multistep waveform 3400 or a waveform with more steps may reduce heating in the piezoelectric element and have advantages for use during certain imaging modes, such as Doppler or harmonic imaging.
- the frequency of the pulses in the waveforms 3300 and 3400 may vary depending on the nature of the signal needed and need to contain the frequency at which membrane underlying the pMUT is responsive to.
- the waveforms may also be complex signals, such as linear or non-linear frequency modulated chirp signals, or other coded signals using the Golay codes.
- the circuits for driving the piezoelectric elements may further be designed such that the transmit output from the underlying membrane may be symmetrical in shape.
- the rising edge of the pulse may be substantially symmetrical to the falling edge of the pulse with respect to the center of the pulse. This symmetry lowers the harmonic content of the transmit signal, specially the second harmonic and other even order harmonics signal.
- the signal pulse in the waveform 3300 (or 3400 ) may be a pulse width modulated (PWM) signal.
- FIG. 35 shows a transmit drive signal waveform according to embodiments of the present disclosure.
- the signal 3500 from the transmit driver may be symmetric and bipolar i.e., the magnitude (H 1 ) and width (W 1 ) of the peak maximum voltage are the same as the magnitude (H 2 ) and width (W 2 ) of the peak minimum voltage.
- the slope of the rising edge 3502 is the same as the slope of the falling edge 3504 .
- the rising time W 3 is the same as the fall time W 4 , where the fall time W 4 refers to the time interval between the starting point of the fall and the reference voltage.
- the rising edge 3506 has the same slope as the rising edge 3502 .
- the transmit drive e.g. 3018 in FIG. 30
- the transmit drive may be driven by an electrical waveform, such as shown in FIGS. 33-34 .
- FIG. 36 shows output signals of various circuits in an imaging assembly according to embodiments of the present disclosure.
- the waveform 3602 may be an output signal from the transmit driver, e.g. 3018 and transmitted to a piezoelectric element, e.g. 3000 .
- the piezoelectric element may have an inherent bandwidth, it may output a sinusoidal output 3604 at its resonant frequency.
- the piezoelectric element may be charged at a rate such that it is completely charged but not very quickly.
- the waveform 3608 which represents the voltage potential across the top and bottom electrodes as a function of time, is closer in shape to the output of the transducer and because difference in shape is smaller, the input signal bandwidth and output signal bandwidth matches better, less loss of energy in heat occurs.
- drive impedance of transmit driver is optimized to reduce the loss of energy. Stated differently, the impedance of the transmit driver is designed to drive the piezoelectric element optimally with respect to heat dissipation and time constants needed for adequate voltage settling within a target time period.
- the imager 120 may use a harmonic imaging technique, where the harmonic imaging refers to transmitting pressure waves on the fundamental frequency of the membrane and receiving reflected pressure waves at second or higher harmonic frequencies of the membrane.
- the images based on the reflected waves at the second or higher harmonic frequencies have higher quality than the images based on the reflected waves at the fundamental frequency.
- the symmetry in the transmit waveform may suppress the second or higher harmonic components of the transmit waves, and as such, the interference of these components with the second or higher harmonic waves in the reflected waves may be reduced, enhancing the image quality of the harmonic imaging technique.
- the waveform 3300 may have 50% duty cycle.
- the arrays may include multiple line units, where each line unit includes a plurality of piezoelectric elements that are electrically coupled to each other.
- the line units may be driven with multiple pulses that have phase differences (or equivalently delays). By adjusting the phases, the resultant pressure waves may be steered at an angle, which is referred to as beamforming.
- FIG. 37A shows a plot of the amplitude of a transmit pressure wave as a function of spatial location along the azimuth axis of the transducer according to embodiments of the present disclosure.
- the piezoelectric elements in the array are arranged in 2 dimensions and the piezoelectric elements on a column in the Y direction are connected and have many columns along the X direction, the X direction is known as the azimuth direction and the Y direction is known as the elevation direction.
- the transmit pressure wave includes the main lobe and multiple side lobes.
- the main lobe may be used to scan tissue targets and have high pressure amplitude.
- the side lobes have lower amplitude but degrade quality of images and therefore it is desirable to reduce their amplitude.
- FIG. 37B shows various types of windows for apodization process according to embodiments of the present disclosure.
- x-axis represents position of a piezoelectric elements relative to the piezoelectric element at the center of an active window and y-axis represents the amplitude (or, weight applied to the piezoelectric element).
- y-axis represents the amplitude (or, weight applied to the piezoelectric element).
- the weighting function is implemented, as depicted by the Hamming window 3722 , lines at the center get a greater weighting than ones at the edges.
- the piezoelectric elements in the leftmost column (which is denoted as ⁇ N in FIG. 37B ) and the piezoelectric elements in the rightmost column (which is denoted as N in FIG. 37B ) may have the lowest weight, while the piezoelectric elements in the middle column may have the highest weight.
- This process is known as apodization.
- various types of window weighting may be applied, even though the Hamming window 3722 shown is only meant to be one example.
- apodization may be implemented by a variety of means such as scaling the transmit driver output drive level differently for different lines by employing a digital to analog converter (DAC) or by keeping the same drive level but reducing the number of pixels on a line
- DAC digital to analog converter
- the net effect is the side lobe level can be reduced by use of apodization, where the weighting of the transmit drive varies based on where a particular line is located within the transmit aperture energized.
- the reduction in the voltage of the pulses or waveforms may lower the temperature at the transducer surface.
- transducers operating at lower voltages may deliver better probe performance, resulting in better quality images.
- transmit pressure waves may be generated by using only a portion of probe (i.e., a subset of the piezoelectric elements) and scanning the remaining elements sequentially in time using a multiplexer. Therefore, at any point of time, in the conventional systems, only a portion of the transducer elements may be used to limit the temperature rise.
- the lower voltage probe may allow more piezoelectric elements to be addressed simultaneously, which may enable increased frame rates of the images and enhanced image quality.
- Significant power is also consumed in the receive path where the received signal is amplified using LNAs.
- An imaging system typically uses a number of receive channels, with an amplifer per receiver channel. In embodiments, using temperature data, a number of receiver channels can be turned off to save power and reduce temperature.
- the apodization may be achieved by varying the number of piezoelectric elements in each line unit according to a window function.
- a window approximation may be achieved by electronically controlling the number of piezoelectric elements on a line or by hardwiring the transducer array with the required number of elements.
- the heat developed by a probe may be a function of the pulse duration in the transmit pulse/waveform.
- SNR signal to noise ratio
- a piezoelectric element may require long pulse trains. However, this also degrades axial resolution and also generates more heat in the piezoelectric elements. So, in the conventional systems, the number of pulses emitted is small, sometimes one or two. Since longer pulses may create more heat energy, making it impractical for their use in the conventional systems.
- the pulses and waveforms 3300 and 3400 may have significantly lower peak values, which may enables the use of long pulse trains, chirps or other coded signaling.
- the longer pulse trains do not degrade axial resolution since in the receiver matched filtering is performed to compress the waveform to restore resolution. This technique allows a better signal to noise ratio and allows signal to penetrate deeper into the body and allows for high quality imaging of targets deeper in the body.
- a layer of Polydimethylsiloxane (PDMS) or other impedance matching material may be spun over the transducer elements in FIGS. 4-19 .
- This layer may improve the impedance matching between the transducer elements and the human body so that the reflection or loss of pressure waves at the interface between the transducer elements and the human body may be reduced.
- more than one line unit may be created by connecting pixels in the y-direction (or x-direction), where one line unit (or equivalently line element) refers to multiple piezoelectric elements that are electrically connected to each other.
- one or more line units may also be created by connecting piezoelectric elements along the x-direction.
- the piezoelectric elements in a line unit may be hardwired.
- each piezoelectric element 1806 may be electrically coupled to a circuit 1842 , i.e., the number of piezoelectric elements in the transceiver substrate 1802 is the same as the number of circuit 1842 in the ASIC chip 1804 .
- the electrical connections of piezoelectric elements in each column (or row) may be performed electronically, i.e., the hardwire conductors (e.g. 2007 ) for connecting electrodes in a column (or row) is replaced by electronic switches.
- the piezoelectric elements in a line imager/unit may be electronically connected to each other.
- a line imager/unit may be built by connecting each piezoelectric element of a two dimensional matrix array to a corresponding control circuit (such as 1842 ) of a two dimensional array of control circuits, where the control circuits are located spatially close to pixels.
- a multiplicity of drivers controlling a column (or row) of pixels may be turned on electronically.
- the number of drivers in each line imager/unit can be electrically modified under program control and electronically adjustable, i.e., the line imager having the piezoelectric elements are electrically configurable.
- smaller capacitance of each pixel may be driven efficiently by the distributed drive circuitry without other equalizing elements in between driver and pixel, eliminating the difficulty of driving a very large line capacitance.
- driver optimization may allow symmetry in rising edge and falling edges, allowing better linearity in transmit output, enabling harmonic imaging. (The symmetry is described in conjunction with FIGS. 33 and 34 .)
- electronic control may allow programmable aperture size, transmit apodization, and horizontal or vertical steering control, all of which may improve image quality.
- the configurable line imager/unit under electronic control may be electrically modified under program control. For example, if a smaller number of connected elements is desired in the y-direction, the number may be adjusted by software control and without having to re-spin the control electronic circuitry or the piezoelectric array.
- each line unit may be designed to consist of several sub units with separate control for each sub unit.
- the advantage of these sub units is that it may alleviate the difficulty of driving a large capacitive load for a line unit using one single external transmit driver. For example, if two line units are created in the place of one line unit that includes the entire piezoelectric elements in a column, two different transmit drivers (such as 2816 ) may be employed and each transmit driver may control half of the load of the full line unit. Also, even if one driver is used, driving the first half of the line unit and the second half of the line unit separately may improve the drive situation due to lower resistance connection to both ends of the line unit.
- both the length and orientation of the line units may be controlled.
- the line units may be arranged in both x and y directions.
- the O electrodes along a column e.g. 2003 - 11 - 2003 - n 1
- the O electrodes in the other columns may be electrically coupled to form n number of line units that extend along the x-direction.
- the line units that extend along the x-direction include n number of O electrodes ( 2003 - 12 - 2003 - 1 n ), . . . , ( 2003 - n 2 - 2003 - nn ).
- the arrangement of line units along orthogonal directions may be possible by controlling the electrical circuits in ASIC chip.
- each piezoelectric element may include two or more top (X and T) electrodes.
- the piezoelectric layer under these top electrode may be poled in the same direction or opposite directions. The multiple poling direction when combined with an appropriate applied signal electric field may create improvements in transducer transmit and receive sensitivities and also create additional resonances to enable wider bandwidth.
- each array may have one or more membranes disposed under the piezoelectric elements.
- the membranes may have multiple modes of vibration.
- one membrane may vibrate in the fundamental mode at a certain frequency while another membrane may vibrate at a different frequency determined by membrane design and relative arrangements of electrodes with different poling directions.
- multiple membranes may be driven by same electrode set and each membrane may have different fundamental frequencies.
- each membrane may be responsive to a wide range of frequencies, increasing its bandwidth. Also, such a transducer with different poling directions may help increase transmit and receive sensitivities while also enabling a high bandwidth transducer.
- the X (or T) electrodes in a column may be electrically coupled to a conductor.
- these conductors may be electrically coupled to one common conductor.
- the conductors 2008 - 1 - 2208 - n may be electrically coupled to one common conductor line so that all of the T electrodes in the array 2200 may be connected to the ground or a common DC bias voltage.
- each array may include piezoelectric elements that are arranged in a two dimensional array, where the number of elements in the x-direction may be the same as the number of elements in the y-direction. However, it should be apparent to those of ordinary skill in the art that the number of elements in the x-direction may be different from the number of elements in the y-direction.
- the ASIC chip (such as 1804 ) coupled to the transducer substrate (such as 1802 ) may contain temperature sensors that measure the surface temperatures of the imaging device 120 facing the human body during operation.
- the maximum allowable temperature may be regulated, and this regulation may limit the functionality of the imaging device since the temperatures should not rise beyond the allowable upper limit.
- this temperature information may be used to improve image quality. For example, if temperature is below the maximum allowed limit, additional power may be consumed in the amplifiers to lower its noise and improve system signal-to-noise ratio (SNR) for improved quality images.
- SNR system signal-to-noise ratio
- the power consumed by the imaging device 120 increases as the number of line units that are driven simultaneously increases. All line units in the imaging device 120 may need to be driven to complete transmitting pressure waves from the whole aperture. If only a few line units are driven to transmit pressure waves, wait and receive the reflected echo at a time, it will take more time to complete one cycle of driving the entire line units for the whole aperture, reducing the rate at which images can be taken per second (frame rate). In order to improve this rate, more line units need to be driven at a time.
- the information of the temperature may allow the imaging device 120 to drive more lines to improve the frame rate.
- each piezoelectric element may have one bottom electrode (O) and one or more top electrodes (X and T) and have more than one resonance frequency.
- each piezoelectric element 2502 in FIG. 25 may have one bottom electrode (O) and two top electrodes, where the first top electrode and the bottom electrode (O) may be responsive to a first frequency f 1 , while the second top electrode and the bottom electrode (O) may be responsive to a second frequency f 2 that may be different from f 1 .
- the electrical charge developed during the receive mode is transferred to an amplifier, such as 1811 , 2810 , 2814 , 2910 , 2914 , 3010 , 3016 , 3128 , and 3228 .
- the amplified signal may be further processed by various electrical components.
- the each of the amplifiers 1811 , 2810 , 2814 , 2910 , 2914 , 3010 , 3016 , 3128 , and 3228 collectively refers to one or more electrical components/circuits that process the electrical charge signal, i.e., each amplifier symbolically represents one or more electrical components/circuits for processing the electrical charge signal.
- FIG. 38 shows a schematic diagram of an imaging assembly 3800 according to embodiments of the present disclosure.
- the imaging assembly 3800 may include: a transceiver substrate 3801 having piezoelectric elements (not shown in FIG. 38 ); an ASIC chip 3802 electrically coupled to the transceiver substrate 3801 ; a receiver multiplexer 3820 electrically coupled to the ASIC chip 3802 ; a receiver analogue-front-end (AFE) 3830 ; a transmitter multiplexer 3824 electrically coupled to the ASIC chip 3802 ; and a transmit beamformer 3834 electrically coupled to the second multiplexer 3824 .
- AFE analogue-front-end
- the ASIC chip 3802 may include multiple circuits 3804 that are connected to and configured to drive multiple piezoelectric elements in the transceiver substrate 3801 .
- each circuit 3804 may include a receiver amplifier (or shortly amplifier) 3806 , such as LNA, and a transmit driver 3808 for transmitting a signal to a piezoelectric element, and a switch 3810 that toggles between the amplifier 3806 and the transmit driver 3808 .
- the amplifiers may have programmable gain and means to connect them to piezo elements that need to be sensed.
- the transmit drivers have means to optimize their impedance and means to be connected to piezoelectric elements that are to be driven.
- the receiver multiplexer 3820 may include multiple switches 3822 and the receiver AFE 3830 may include multiple amplifiers 3832 .
- each of the switches 3822 may electrically connect/disconnect a circuit 3804 to/from an amplifier 3832 .
- the transmitter multiplexer 3824 may include multiple switches 3826 and the transmit beamformer 3834 may include multiple transmit driver 3836 and other circuitry not shown to control the relative delay between transmit driver waveform of the various drivers, and other circuitry not shown to control the frequency and the number of pulses for each of the transmit drivers.
- each of the switches 3826 turn on during a transmit operation and connect to circuit 3804 , while switches 3822 turn off, while switch 3810 connects to transmit driver 3808 .
- switches 3826 turn off while switches 3822 turn on, while switch 3810 is connected to amplifier 3806 .
- the switches 3810 may be toggled to the transmit drivers 3808 during the transmit mode and toggle to the amplifiers 3806 during the receive mode.
- a portion of the switches 3822 may be closed so that the corresponding circuits 3804 may be set to the receive mode.
- a portion of the switches 3826 may be closed so that the corresponding circuits 3804 may be set to the transmit mode. Since a portion of the switches 3822 and a portion of the switches 3826 may be closed simultaneously, the imager assembly may be operated in both transmit and receive modes simultaneously.
- the receiver multiplexer 3820 and the transmitter multiplexer 3824 reduce the number of ASIC pins.
- the receiver multiplexer 3820 , receiver AFE 3830 , transmitter multiplexer 3824 , and transmitter beamformer 3834 may be included in the circuits 215 in FIG. 2 .
- each piezoelectric may have more than two electrodes, where one electrode may be in the transmit mode to generate pressure waves while the other electrode may be simultaneously in the receive mode to develop electrical charge. This simultaneous operation of transmit and receive modes may allow three dimensional imaging.
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Abstract
A transceiver includes an array of pMUT elements, where each pMUT element includes: a substrate; a membrane suspending from the substrate; a bottom electrode disposed on the membrane; a piezoelectric layer disposed on the bottom electrode; and a first electrode disposed on the piezoelectric layer. Each pMUT element exhibits one or more modes of vibration.
Description
- This application is a divisional application of Ser. No. 15/826,614, filed Nov. 29, 2017, entitled “LOW VOLTAGE, LOW POWER MEMS TRANSDUCER WITH DIRECT INTERCONNECT CAPABILITY,” which claims the benefit of U.S. Provisional Application Nos. 62/429,832, filed on Dec. 4, 2016, entitled “A Configurable Ultrasonic Line imager,” 62/429,833, filed on Dec. 4, 2016, entitled “Low Voltage, Low Power MEMS Transducer with Direct Interconnect,” and 62/433,782, filed on Dec. 13, 2016, entitled “Micromachined Transceiver Array,” which are hereby incorporated by reference in their entirety.
- The present invention relates to imaging devices, and more particularly, to imaging devices having configurable ultrasonic line imagers.
- A non-intrusive imaging system/probe for imaging internal tissue, bones, blood flow or organs of human or animal body and displaying the images requires transmission of a signal into the body and receiving an emitted or reflected signal from the body part being imaged. Typically, transducers that are used in an imaging system are referred to as transceivers and some of the transceivers are based on photo-acoustic or ultrasonic effects. In general, the transceivers are used for imaging, but are not necessarily limited to imaging. For example, the transceivers can be used in medical imaging, flow measurements in pipes, speaker and microphone arrays, lithotripsy, localized tissue heating for therapeutics or highly intensive focused ultrasound (HIFU) for surgery.
- The conventional transducers built from bulk piezoelectric (PZT) material typically require very high voltage pulses to generate transmission signals, typically 100 V or more. This high voltage results in high power dissipation, since the power consumption/dissipation in the transducers is proportional to the square of the drive voltage. There is also a limit on how hot the surface of the probe could be and this limits how much power could be consumed in the probe, since the consumed power is proportional to the heat generated by the probe. In the conventional systems, the heat generation has necessitated cooling arrangements for some probes, increasing the manufacturing costs and weights of the probes. In general, the weight of the conventional probe is also an issue, since a large number of sonographers, who use these probes, are known to suffer from muscular injuries.
- The conventional ultrasound probes in use for medical imaging typically use PZT material or other piezo ceramic and polymer composites. Probes typically house the transducers and some other electronics with means to cause an image to be displayed on a display unit. To fabricate the conventional bulk PZT elements for the transducers, one can simply cut a thick piezoelectric material slab into large rectangular shaped PZT elements. These rectangular shaped PZT elements are very expensive to build, since the manufacturing process involves precisely cutting of the rectangular shaped thick PZT or ceramic material and mounting on substrates with precise spacing. Further, the impedance of the transducers is much higher than the impedance of the transmit/receive electronics for the transducers.
- In the conventional systems, the transmit/receive electronics for the transducers often are located far away from the probe, requiring micro-coax cables between the transducers and electronics. In general, the cables need to have a precise length for delay and impedance matching, and, quite often, additional impedance matching networks are required for efficient connection of the transducers through the cables to the electronics.
- Advances in micro-machining technologies allow sensors and actuators, such as capacitive micromachined ultrasound transducers (cMUTs) and piezoelectric micromachined ultrasound transducers (pMUTs), to be efficiently formed on a substrate. Compared to the conventional transducers having bulky piezoelectric material, pMUTs are less bulky and cheaper to manufacture while they have simpler and higher performance interconnection between electronics and transducers, provide greater flexibility in the operational frequency, and potential to generate higher quality images.
- Although the basic concepts for these transducers have been disclosed in the early 1990's, commercial implementation of these concepts has met with a number of challenges. For instance, the conventional cMUT sensors are particularly prone to failure or drift in performance due to the charge build-up during the high voltage operation, difficulty with generating high enough acoustic pressure at lower frequencies and are inherently nonlinear. The conventional pMUTs have been a promising alternative but have issues related to transmission and receive inefficiencies, still required relatively high operating voltages and had limited bandwidth As such, there is a need for pMUTs that have an enhanced efficiency, that can operate at lower voltages and exhibit high bandwidth.
- In embodiments, a transceiver includes: a substrate; a membrane suspending from the substrate; a bottom electrode disposed on the membrane; a piezoelectric layer disposed on the bottom electrode; first and second top electrodes disposed on the piezoelectric layer, the first top electrode being electrically separated from the second top electrode; and the piezoelectric layer including a first portion located under the first top electrode and poled in a first direction and a second portion located under the second top electrode and poled in a second direction that is opposite to the first direction.
- In embodiments, a transceiver includes: a transceiver substrate and an ASIC chip. The transceiver substrate includes: a substrate; at least one membrane disposed on the substrate; and a plurality of piezoelectric elements disposed on the at least one membrane, each of the plurality of piezoelectric elements including; a bottom electrode; a piezoelectric layer disposed on the bottom electrode; first and second top electrodes disposed on the piezoelectric layer, the first top electrode being electrically and spatially separated from the second top electrode; and the piezoelectric layer including a first portion located under the first top electrode and poled in a first direction and a second portion located under the second top electrode and poled in a second direction that is opposite to the first direction. The ASIC chip is electrically coupled to the transceiver substrate by a three dimensional interconnection mechanism and includes: at least one circuit for controlling one or more of the plurality of piezoelectric elements; and a control unit electrically coupled to the at least one circuit and controlling the at least one circuit.
- In embodiments, an imaging system includes first and second imaging device. Each of the first and second imaging device includes: a substrate; at least one membrane disposed on the substrate; and a plurality of piezoelectric elements disposed on the at least one membrane. Each of the plurality of piezoelectric elements includes; a bottom electrode; a piezoelectric layer disposed on the bottom electrode; first and second top electrodes disposed on the piezoelectric layer, the first top electrode being electrically and spatially separated from the second top electrode; and the piezoelectric layer including a first portion located under the first top electrode and poled in a first direction and a second portion located under the second top electrode and poled in a second direction that is opposite to the first direction. The first imaging device transmits pressure waves toward a target to be imaged and wherein the second imaging device is located at a different location from the first imaging device and receives pressure waves reflected from the target.
- References will be made to embodiments of the invention, examples of which may be illustrated in the accompanying figures. These figures are intended to be illustrative, not limiting. Although the invention is generally described in the context of these embodiments, it should be understood that it is not intended to limit the scope of the invention to these particular embodiments.
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FIG. 1 shows a schematic diagram of an imaging system according to embodiments of the present disclosure. -
FIG. 2 shows a schematic diagram of an ultrasonic imager according to embodiments of the present disclosure.FIG. 2A shows a schematic diagram of an ultrasonic imager according to embodiments of the present disclosure. -
FIG. 3A shows a side views of an exemplary transceiver array according to embodiments of the present disclosure. -
FIG. 3B shows a top view of a transceiver tile according to embodiments of the present disclosure. -
FIG. 4-8 show steps for fabricating an exemplary piezoelectric element according to embodiments of the present disclosure. -
FIG. 9 shows a schematic diagram of a piezoelectric element according to embodiments of the present disclosure. -
FIG. 10A shows a schematic diagram of a piezoelectric element according to embodiments of the present disclosure. -
FIG. 10B shows a symbolic representation of the piezoelectric element inFIG. 10A . -
FIG. 10C shows a schematic cross sectional view of an exemplary piezoelectric element according to embodiments of the present disclosure. -
FIG. 10D shows a schematic diagram of a piezoelectric element according to embodiments of the present disclosure. -
FIG. 10E shows a schematic diagram of a piezoelectric element according to embodiments of the present disclosure. -
FIG. 10F shows a schematic diagram of a piezoelectric element according to embodiments of the present disclosure. -
FIG. 10G shows a bottom view of the piezoelectric element inFIG. 10F according to embodiments of the present disclosure. -
FIG. 10H shows a cross sectional view of the piezoelectric element inFIG. 10F according to embodiments of the present disclosure. -
FIG. 11 shows a schematic diagram of a piezoelectric element according to embodiments of the present disclosure. -
FIG. 12-16 shows steps for fabricating an exemplary piezoelectric element according to embodiments of the present disclosure. -
FIG. 17A shows dipole orientations of a piezoelectric material before, during and after a poling process according to embodiments of the present disclosure. -
FIG. 17B shows a flow chart of an illustrative process for poling a piezoelectric layer according to embodiments of the present disclosure. -
FIG. 18A shows a schematic diagram of an imaging assembly according to embodiments of the present disclosure. -
FIG. 18B shows a schematic diagram of an imaging assembly according to embodiments of the present disclosure. -
FIG. 19A-1 shows a top view of a transceiver substrate and an ASIC chip according to embodiments of the present disclosure. -
FIG. 19A-2 shows a side view of an imaging assembly according to embodiments of the present disclosure. -
FIG. 19B-1 shows a top view of a transceiver substrate and an ASIC chip according to embodiments of the present disclosure. -
FIG. 19B-2 shows a side view of an imaging assembly according to embodiments of the present disclosure. -
FIG. 19C shows a top view of a transceiver substrate and an ASIC chip according to embodiments of the present disclosure. -
FIG. 19D shows a top view of a transceiver substrate and an ASIC chip according to embodiments of the present disclosure. -
FIG. 19E shows a top view of a transceiver substrate and an ASIC chip according to embodiments of the present disclosure. -
FIG. 19F shows a top view of a transceiver substrate and an ASIC chip according to embodiments of the present disclosure. -
FIG. 19G shows a top view of a transceiver substrate and an ASIC chip according to embodiments of the present disclosure. -
FIG. 20 illustrates a schematic diagram of an array of piezoelectric elements capable of performing two and three dimensional imaging according to embodiments of the present disclosure. -
FIG. 21 illustrates a schematic diagram of an array of piezoelectric elements according to embodiments of the present disclosure. -
FIG. 22 illustrates a schematic diagram of an array of piezoelectric elements according to embodiments of the present disclosure. -
FIG. 23 illustrates a schematic diagram of an array of piezoelectric elements according to embodiments of the present disclosure. -
FIG. 24 illustrates a schematic diagram of an array of piezoelectric elements according to embodiments of the present disclosure. -
FIG. 25 illustrates a schematic diagram of an array of piezoelectric elements according to embodiments of the present disclosure. -
FIG. 26 illustrates a schematic diagram of an array of piezoelectric elements according to embodiments of the present disclosure. -
FIG. 27 illustrates a schematic diagram of an array of piezoelectric elements according to embodiments of the present disclosure. -
FIG. 28 illustrates a schematic diagram of an imaging system according to embodiments of the present disclosure. -
FIG. 29 illustrates a schematic diagram of an imaging system according to embodiments of the present disclosure. -
FIG. 30 shows an embodiment of a piezoelectric element coupled to a circuit element according to embodiments of the present disclosure. -
FIG. 31 shows a circuit for controlling multiple piezoelectric element according to embodiments of the present disclosure. -
FIG. 32 shows a circuit for controlling multiple piezoelectric element according to embodiments of the present disclosure. -
FIG. 33 shows a transmit drive signal waveform according to embodiments of the present disclosure. -
FIG. 34 shows a transmit drive signal waveform according to embodiments of the present disclosure. -
FIG. 35 shows a transmit drive signal waveform according to embodiments of the present disclosure. -
FIG. 36 shows input/output signals of various circuits in an imaging assembly according to embodiments of the present disclosure. -
FIG. 37A shows a plot of the amplitude of a transmit pressure wave as a function of angle according to embodiments of the present disclosure. -
FIG. 37B shows windows for apodization process according to embodiments of the present disclosure. -
FIG. 38 shows a schematic diagram of an imaging assembly according to embodiments of the present disclosure. - In the following description, for purposes of explanation, specific details are set forth in order to provide an understanding of the disclosure. It will be apparent, however, to one skilled in the art that the disclosure can be practiced without these details. Furthermore, one skilled in the art will recognize that embodiments of the present disclosure, described below, may be implemented in a variety of ways, such as a process, an apparatus, a system, a device, or a method on a tangible computer-readable medium.
- One skilled in the art shall recognize: (1) that certain fabrication steps may optionally be performed; (2) that steps may not be limited to the specific order set forth herein; and (3) that certain steps may be performed in different orders, including being done contemporaneously.
- Elements/components shown in diagrams are illustrative of exemplary embodiments of the disclosure and are meant to avoid obscuring the disclosure. Reference in the specification to “one embodiment,” “preferred embodiment,” “an embodiment,” or “embodiments” means that a particular feature, structure, characteristic, or function described in connection with the embodiment is included in at least one embodiment of the disclosure and may be in more than one embodiment. The appearances of the phrases “in one embodiment,” “in an embodiment,” or “in embodiments” in various places in the specification are not necessarily all referring to the same embodiment or embodiments. The terms “include,” “including,” “comprise,” and “comprising” shall be understood to be open terms and any lists that follow are examples and not meant to be limited to the listed items. Any headings used herein are for organizational purposes only and shall not be used to limit the scope of the description or the claims. Furthermore, the use of certain terms in various places in the specification is for illustration and should not be construed as limiting.
- In embodiments, the pMUT transducers and transducer assemblies may be used for generating images of internal organs of a human/animal body as well as other therapeutic applications where ultrasonic beams are used to heat tissue for healing or focus high power ultrasonic beams for micro surgery. In embodiments, the piezoelectric elements may also be used for tomography applications.
- In embodiments, the manufacturing cost of pMUTs may be reduced by applying modern semiconductor and wafer processing techniques. In embodiments, thin film piezoelectric layer may be spun on or sputtered onto semiconductor wafers and later patterned to create piezoelectric sensors that each have two or more electrodes. In embodiment, each piezoelectric element may be designed to have the ability to emit or receive signals at a certain frequency, known as center frequency, as well as the second and/or additional frequencies. Hereinafter, the terms piezoelectric element, pMUT, transceiver, and pixel are used interchangeably.
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FIG. 1 shows a schematic diagram of animaging system 100 according to embodiments of the present disclosure. As depicted, thesystem 100 may include: animager 120 that generates and transmits pressure waves 122 toward aninternal organ 112, such as heart, in a transmit mode/process; and adevice 102 that sends and receives signals to the imager through acommunication channel 130. In embodiments, theinternal organ 112 may reflect a portion of the pressure waves 122 toward theimager 120, and theimager 120 may capture the reflected pressure waves and generate electrical signals in a receive mode/process. Theimager 120 may communicate electrical signals to thedevice 102 and thedevice 102 may display images of the organ or target on a display/screen 104 using the electrical signals. - In embodiment, the
imager 120 may be used to perform one dimensional imaging, also known as A-Scan, two dimensional imaging, also known as B scan, three dimensional imaging, also sometimes referred to as C scan, and Doppler imaging. Also, the imager may be switched to various imaging modes under program control. - In embodiments, the
imager 120 may be used to get an image of internal organs of an animal, too. Theimager 120 may also be used to determine direction and velocity of blood flow in arteries and veins as in Doppler mode imaging and also measure tissue stiffness. In embodiments, thepressure wave 122 may be acoustic, ultrasonic, or photo-acoustic waves that can travel through the human/animal body and be reflected by the internal organs, tissue or arteries and veins. - In embodiments, the
imager 120 may be a portable device and communicate signals through thecommunication channel 130, either wirelessly (using a protocol, such as 802.11 protocol) or via a cable (such as USB2,USB 3, USB 3.1, and USB-C), with thedevice 102. In embodiments, thedevice 102 may be a mobile device, such as cell phone or iPad, or a stationary computing device that can display images to a user. - In embodiments, an imager may be configured to simultaneously transmit and receive ultrasonic waveforms. Certain piezoelectric elements may be configured to send pressure waves toward the target organ being imaged while other piezoelectric elements may receive the pressure waves reflected from the target organ and develop electrical charges in response to the received waves.
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FIG. 2 shows a schematic diagram of theimager 120 according to embodiments of the present disclosure. In embodiments, theimager 120 may be an ultrasonic imager. As depicted inFIG. 2 , theimager 120 may include: a transceiver tile(s) 210 for transmitting and receiving pressure waves; acoating layer 212 that operates as a lens for steering the propagation direction of and/or focusing the pressure waves and also functions as an impedance interface between the transceiver tile and thehuman body 110; acontrol unit 202, such as ASIC chip (or, shortly ASIC), for controlling the transceiver tile(s) 210 and coupled to thetransducer tile 210 by bumps; Field Programmable Gate Arrays (FPGAs) 214 for controlling the components of theimager 120; a circuit(s) 215, such as Analogue Front End (AFE), for processing/conditioning signals; anacoustic absorber layer 203 for absorbing waves that are generated by thetransducer tiles 210 and propagate toward thecircuit 215; acommunication unit 208 for communicating data with an external device, such as thedevice 102, through one ormore ports 216; amemory 218 for storing data; abattery 206 for providing electrical power to the components of the imager; and optionally adisplay 217 for displaying images of the target organs. - In embodiments, the
device 102 may have a display/screen. In such a case, the display may not be included in theimager 120. In embodiments, theimager 120 may receive electrical power from thedevice 102 through one of the ports 230. In such a case, theimager 120 may not include thebattery 206. It is noted that one or more of the components of theimager 120 may be combined into one integral electrical element. Likewise, each component of theimager 120 may be implemented in one or more electrical elements. - In embodiments, the user may apply gel on the skin of the
human body 110 before thebody 110 makes a direct contact with thecoating layer 212 so that the impedance matching at the interface between thecoating layer 212 and thehuman body 110 may be improved, i.e., the loss of thepressure wave 122 at the interface is reduced and the loss of the reflected wave travelling toward theimager 120 is also reduced at the interface. In embodiments, thetransceiver tiles 210 may be mounted on a substrate and may be attached to an acoustic absorber layer. This layer absorbs any ultrasonic signals that are emitted in the reverse direction, which may otherwise be reflected and interfere with the quality of the image. - As discussed below, the
coating layer 212 may be only a flat matching layer just to maximize transmission of acoustic signals from the transducer to the body and vice versa. In embodiments, the thickness of thecoating layer 212 may be a quarter wavelength of the pressure wave generated by the transducer tile(s) 202. Beam focus in the elevation direction. which is along the direction of the length of the column, is not essential in this case, because it can be electronically implemented incontrol unit 202. Even then, the lens may be designed with a focus in some cases. Theimager 120 may use the reflected signal to create an image of theorgan 112 and results may be displayed on a screen in a variety of format, such as graphs, plots, and statistics shown with or without the images of theorgan 112. - In some embodiments, the
control unit 202, such as ASIC, may be assembled as one unit together with the transceiver tiles. In other embodiments, thecontrol unit 202 may be located outside theimager 120 and electrically coupled to thetransceiver tile 210 via a cable 220 (e.g., as shown inFIG. 2A ). In some embodiments, theimager 120 may include a housing orenclosure 250 that encloses the components 202-215 and a heat dissipation mechanism for dissipating heat energy generated by the components as shown inFIG. 2A . In other embodiments, for example, where thecontrol unit 202 is located outside theimager 120, a second housing orenclosure 251 may be provided to enclose thecontrol unit 202 while the other components 203-215 are enclosed by the first housing orenclosure 250. -
FIG. 3A shows a schematic diagram of an exemplary transceiver array having threetransceiver tiles 210 according to embodiments of the present disclosure. The tiles may be on a planar surface or on a curved surface.FIG. 3B shows a top view of thetransceiver tile 210 that includes one or morepiezoelectric elements 302 according to embodiments of the present disclosure. As depicted, thetransceiver tile 210 may include atransceiver substrate 304 and one or morepiezoelectric elements 302 arranged on thetransceiver substrate 304. - Unlike the conventional systems that use bulk piezoelectric elements, in embodiments, the
pMUT array 302 may be formed on a wafer and the wafer may be diced to formmultiple transceiver tiles 210. This process may reduce the manufacturing cost since thetransceiver tiles 210 may be fabricated in high volume and at low cost. In embodiments, the diameter of the wafer may range 6-12 inches and many pMUT arrays may be batch manufactured. Further, in embodiments, as discussed in conjunction withFIGS. 18 and 19 , the integrated circuits for controlling thepMUT array 302 may be formed in an ASIC chip so that thepMUT array 302 may be connected to the matching integrated circuits in close proximity, preferably within 25 μm-100 μm. For example, thetransceiver tile 210 may have 1024pMUT elements 302 and be connected to a matching ASIC chip that has the appropriate number of circuits for driving the 1024pMUT elements 302. - In embodiments, each
piezoelectric element 302 may have any suitable shape such as, square, rectangle, and circle, so on. In embodiments, two or more piezoelectric elements may be connected to form a larger pixel element. As depicted inFIG. 3B , when building an imager, it is desirable to have a two dimensional array ofpiezoelectric element 302, arranged in orthogonal directions. In embodiments, to create a line element, a column of Npiezoelectric elements 302 may be connected electrically in parallel. Then, this line element may provide transmission and reception of ultrasonic signals similar to those achieved by a continuous piezoelectric element that is almost N times longer than each element. This line element may be called a column or line or line element interchangeably. It is understood that tiles may be arranged in other shape such as circular, or other shapes. In embodiments, one ormore temperature sensors 320 may be installed in thetransducer tile 210 to measure the temperature of thetile 210. It is noted that theimager 120 may include one or more temperature sensors for measuring temperatures at various locations of theimager 120. - To mimic a line element of the conventional designs, the shape of a piezoelectric element of a given width may need to be very tall. For example, a line element of a conventional design may be 280 μm in width and 8000 μm tall, while the thickness may be 100 μm. However, on the
transceiver tile 210, it is advantageous to design a line element using a plurality of identicalpiezoelectric elements 302, where each element may have its characteristic center frequency. In embodiments, when a plurality of thepiezoelectric elements 302 are connected together, the composite structure (i.e. the line element) may act as one line element with a center frequency that consists of the center frequencies of all the element pixels. In modern semiconductor processes, these center frequencies match well to each other and have a very small deviation from the center frequency of the line element. It is also possible to mix several pixels of somewhat different center frequencies to create a wide bandwidth line compared to lines using only one central frequency. - In embodiments, the
piezoelectric elements 302 have a suspended membrane associated with them that vibrates at a center frequency when exposed to stimulus at that frequency and behave like resonators. There is a selectivity associated with these resonators, known as a Q factor. In embodiments, for ultrasound imagers, Q may be usually designed to be low (close 1 or thereabouts) and achieved by a combination of design of the pixels and loading applied to the pixels in actual use. In embodiments, the loading may be provided by application of a layer of RTV or other material to the top face of the piezoelectric elements, where the loading may facilitate closer impedance matching between the transducer surface emitting and receiving the pressure waves and the human body part being imaged. In embodiments, the low Q and the well matched center frequency may allow the line element to essentially act like a line imaging element with substantially one center frequency. In embodiments, loading may also include a matching layer below the transducers, where the emitted waveform is absorbed by an acoustic absorber. - In embodiments, for instance, each
piezoelectric element 302 may be spaced 250 μm from each other center to center. Further to simplify, say they are square in shape. Now, let's say, to mimic a conventional line element, a column of thepiezoelectric elements 302 may be connected to each other. For example, 24piezoelectric elements 302 in a column may create a line element of roughly 6 mm in elevation, with each element being 0.25 mm in width. In embodiments, this connection may be achieved at wafer level using a metal interconnect layer. - It is noted that the
transceiver tile 210 may include one or more membranes that suspend from the substrate and thepiezoelectric elements 302 may be disposed on the membranes. In embodiments, as described below in conjunction withFIGS. 4-8 , a membrane may be disposed under each of thepiezoelectric elements 302. In embodiments, more than one piezoelectric elements may be disposed on one membrane 309. In embodiments, more than one membrane may be disposed under one of thepiezoelectric elements 302. More information on the arrangement of piezoelectric elements on a membrane may be found in a copending U.S. patent application Ser. No. 15/820,319, entitled “Imaging devices having piezoelectric transducers,” filed on Nov. 21, 2017, which is herein incorporated by reference in its entirety. - For the conventional bulk piezoelectric elements, the voltage potential across the top and bottom electrodes ranges 100V-200V. For the conventional pMUTs, the voltage potential across the top and bottom electrodes is about 30V. In embodiments, in order to reduce this voltage further, the
piezoelectric elements 302 may include a scaled down thin piezoelectric layer, and the piezoelectric layer may have a thickness in the order of 2 μm or less.FIGS. 4-8 show steps for fabricating an exemplary piezoelectric element according to embodiments of the present disclosure.FIG. 4 shows a top view of amembrane 406 disposed on asubstrate 402 andFIG. 5 shows a cross sectional view of the membrane and substrate, taken along the line 4-4 according to embodiments of the present disclosure. (In embodiments, thesubstrate 402 may correspond to thetransceiver substrate 304 inFIG. 3B .) As depicted, in embodiments, amembrane layer 404 may be deposited on thesubstrate 402 and acavity 408 may be formed to remove a portion of thesubstrate 402, to thereby form themembrane 406 that may vibrate relative to thesubstrate 402 in the vertical direction. In embodiment, thecavity 408 may be formed by conventional wafer processing techniques, such as etching. In embodiments, thesubstrate 402 may be formed of the same material as themembrane layer 404. In alternative embodiments, thesubstrate 402 may be formed of a different material from themembrane layer 404. It is noted that thecavity 408 may be formed after the other components, such as top conductor (812 inFIG. 8 ), of the piezoelectric element is formed. - In embodiments, the
membrane 406 has a circular projection area. However, it should be apparent to those of ordinary skill in the art that themembrane 406 may have other suitable geometrical shape. -
FIG. 6 shows a top view of a bottom electrode 602 disposed on themembrane layer 404 and arranged over themembrane 406 according to embodiments of the present disclosure.FIG. 7 shows a top view of apiezoelectric layer 706 disposed on the bottom electrode 602 according to embodiments of the present disclosure. In embodiments, thepiezoelectric layer 706 may have the similar projection area as the bottom electrode 602 so that thepiezoelectric layer 706 may cover the entire portion of the bottom electrode 602. -
FIG. 8 shows a top view of a piezoelectric element according to embodiments of the present disclosure. As depicted, atop electrode 808 may be disposed on thepiezoelectric layer 706 and arranged over themembrane 406. In embodiments, aconductor 812 may be disposed on and electrically coupled to thetop electrode 808, whileconductors more vias 814. In embodiments, thetop electrode 808, thepiezoelectric layer 706 and the bottom electrode 602 may form a two terminal piezoelectric element and themembrane 406 may vibrate when an electrical voltage is applied across the top and bottom electrodes. In embodiments, electrical charge may be developed in the top and bottom electrodes when the membrane is deformed by a pressure wave during a receive mode/process. -
FIG. 9 shows a schematic diagram of apiezoelectric element 900 according to embodiments of the present disclosure. As depicted, apiezoelectric layer 910 may be disposed between a first electrode (X) 906 and a second electrode (O) 904. In embodiments, the first electrode (X) 906 may be connected to a ground or a DC bias via the conductor (X) 908 and the second electrode (O) 904 may be connected to an electrical circuit (not shown inFIG. 9 ) through a signal conductor (O) 902. In embodiments, thepiezoelectric element 800 inFIG. 8 is an exemplary implementation of thepiezoelectric element 900 and thepiezoelectric element 900 may be disposed on a membrane layer (such as 404 inFIG. 5 ). - In the conventional piezoelectric elements, the piezoelectric layer is thick, approaching around 100 μm and typically an AC voltage of +100 to −100 V across the piezoelectric layer is required to create an ultrasonic pressure wave of sufficient strength to enable medical imaging. The frequency of this AC drive signal is typically around the resonating frequency of the piezoelectric structure, and typically above 1 MHz for medical imaging applications. In the conventional systems, the power dissipated in driving the piezoelectric element is proportional to C*V2, where C is capacitance of the piezoelectric element and V is the maximum voltage across the piezoelectric layer. Typically, when transmitting pressure waves, multiple piezoelectric lines are driven together with somewhat different phase delays to focus the pressure waves or to steer a propagation direction of the pressure waves. The simultaneous drive of multiple piezoelectric lines causes the temperature at the surface of the piezoelectric elements to rise. In general, it is highly desirable not to exceed a certain threshold temperature, so as not to injure the subject being imaged. This limits the number of lines that can be driven and the time period for which they can be driven.
- In embodiments, the
piezoelectric layer 910 is much thinner, approximately 1 to 2 μm thick, compared to the conventional bulk piezoelectric elements. In embodiments, this large reduction in thickness may enable the use of lower voltage drive signals for thepiezoelectric element 900, where the voltage is lowered approximately by the amount by which the thickness of thepiezoelectric layer 910 is lowered to maintain the similar electric field strength. For example, in embodiments, the voltage potential across the twoelectrodes piezoelectric element 900 may increase due to the reduction in thickness of thepiezoelectric layer 910 for similar piezoelectric material. For instance, when the drive voltage is decreased by a factor of 10 while the thickness of thepiezoelectric layer 910 is also decreased by a factor of 10, the capacitance increases by a factor of 10 and the power dissipation decreases by a factor of 10. This reduction in power dissipation also reduces heat generation and temperature rise in the piezoelectric element. Thus, in embodiments, using lower drive voltages and thinner piezoelectric layer, compared to the conventional piezoelectric elements, the temperature of the pMUT surface may be lowered. Alternately, in embodiments, for a given temperature, more pMUT elements may be driven simultaneously to illuminate the larger target area, compared to the conventional piezoelectric elements. This may allow faster scanning of the target, especially if multiple emissions are needed to scan the entire portion of the target to form one image. In embodiments, a target area may be scanned with multiple emissions using different steering angles and the obtained image data may be combined to obtain a higher quality image. - Compared to the conventional bulk piezoelectric elements, in embodiments, the ability to drive more piezoelectric elements simultaneously may allow more coverage of the transducer aperture per emission, minimizing the number of emissions needed to cover the entire aperture, thus increasing frame rates. A frame rate measures how many times a target is imaged per minute. It is desirable to image at a high frame rate, especially when tissue motion is involved since the moving tissue may make the image blurry. In embodiments, the
imager 120 that operates at a higher frame rate may be able to generate images of enhanced quality, compared to the conventional bulk piezoelectric elements. - In embodiments, image quality may be improved by compounding several frames of images into one resultant lower noise frame. In embodiments, by using low voltage and low power pMUTs with a high frame rate, compared to the conventional bulk piezoelectric elements, for a given rise in the pMUT temperature, this averaging technique may be feasible to enhance the image quality. In embodiments, the synthetic aperture method of ultrasound imaging may be used to allow compounding of images. The various frames of images may also be with different steering angles or from orthogonal steering directions to better view the target.
-
FIG. 10A shows a schematic diagram of apiezoelectric element 1000 according to embodiments of the present disclosure.FIG. 10B shows a symbolic representation of thepiezoelectric element 1000 inFIG. 10A . As depicted, thepiezoelectric element 1000 is similar to thepiezoelectric element 900, with the difference that thepiezoelectric element 1000 has more than two electrodes. More specifically, thepiezoelectric element 1000 may include: a top electrode (O) 100, a first bottom electrode (X) 1006; a second bottom electrode (T) 1012; apiezoelectric layer 1010 disposed between the top and bottom electrodes; and threeconductors top electrodes - While a unimorph piezoelectric element is shown in
FIG. 10A purely for the purpose of illustration, in embodiments, a multiplayer piezoelectric element composed of a plurality of piezoelectric sublayers and electrodes can be utilized. In embodiments, thepiezoelectric layer 1010 may include at least one of PZT, PZT-N, PMN-Pt, AlN, Sc—AlN, ZnO, PVDF, and LiNiO3. -
FIG. 10C shows a schematic cross sectional diagram of thepiezoelectric element 1000 according to embodiments of the present disclosure. As depicted, thepiezoelectric element 1000 may be disposed on a membrane layer 1034 that is supported by asubstrate 1030. In embodiments, acavity 1032 may be formed in thesubstrate 1030 to define a membrane. In embodiments, the membrane layer 1034 may be formed by depositing SiO2 on thesubstrate 1030. - In embodiments, the
piezoelectric element 1000 may include apiezoelectric layer 1010 and a first electrode (O) 1002 that is electrically connected to a signal conductor (O) 1004. In embodiments, the signal conductor (O) 1004 may be formed by depositing TiO2 and metal layers on the membrane layer 1034. In embodiments, thepiezoelectric layer 1010 may be formed by the sputtering technique or by the Sol Gel process. - In embodiments, a second electrode (X) 1006 may be grown above the
piezoelectric layer 1010 and electrically connected to asecond conductor 1008. A third electrode (T) 1012 may be also grown above thepiezoelectric layer 1010 and disposed adjacent to thesecond conductor 1012 but electrically isolated from the second conductor (X) 1008. In embodiments, the second electrode (X) 1006 and third electrode (T) 1012 may be formed by depositing one metal layer on thepiezoelectric layer 1010 and patterning the metal layer. In embodiments, the projection areas of theelectrodes - As in the
piezoelectric element 1000, the first electrode (O) 1002 may be electrically connected to the conductor (O) 1004 using a metal, a via and interlayer dielectrics. In embodiments, the first electrode (O) 1002 may be in direct contact with thepiezoelectric layer 1010. The third conductor (T) 1014 may be deposited or grown on the other side of thepiezoelectric layer 1010 with respect to the first electrode (O) 1002. -
FIG. 10D shows a schematic diagram of apiezoelectric element 1030 according to embodiments of the present disclosure. As depicted, thepiezoelectric element 1030 may include two sub piezoelectric elements (or shortly sub elements) 1031-1 and 1031-2. In embodiments, each sub element may be a three terminal device, i.e. it may have one top electrode 1032-1 (or 1032-2), two bottom electrodes 1034-1 (or 1034-2) and 1036-1 (or 1036-2), and one piezoelectric layer 1035-1 (or 1035-2). In embodiments, the top electrode 1032-1 may be electrically connected to the top electrode 1032-2 by a common conductor (O) 1031, the first bottom electrode (X) 1034-1 may be electrically connected to the first bottom electrode (X) 1034-2 by a common conductor (X) 1038, and the second bottom electrode (T) 1036-1 may be electrically connected to the second bottom electrode (T) 1036-2 by a common conductor (T) 1040. In embodiments, thepiezoelectric element 1030 may be disposed on one membrane or each sub element may be disposed on a separate membrane. It should be apparent to those of ordinary skill in the art that the conductor (O) 1032-1 may be electrically connected to the electrode (O) 1031, using metals, vias, interlayer dielectrics (ILD), so on, in the similar manner as the piezoelectric element illustrated inFIGS. 12-16 . - In embodiments, the conductor (X) 1038 and the conductor (T) 1040 may be all grounded (or connected to a DC bias) during active operation of the imager. In embodiments, the electrodes (O) 1032-1 and 1032-2 may be driven by a common transmit driver circuit and a common electrical signal, typically a signal waveform around the center frequency of the transducer. For example, if the center frequency is 2 MHz, a sinusoidal waveform or square waveform at 2 MHz is applied to the
piezoelectric element 1030. This waveform may cause thepiezoelectric element 1030 to resonate at 2 MHz and send out a pressure wave, such as 122, from the surface of the transducer. The pressure wave may be reflected from the target organ to be imaged. In embodiments, the reflected pressure wave may hit thepiezoelectric element 1030 which is now connected to a signal receiver. The pressure wave may be converted to the electrical charge in thepiezoelectric element 1030 by the piezoelectric layers 1035-1 and 1035-2. In embodiments, this charge may be signal processed by amplifiers, filters and eventually digitized by an A/D converter (not shown inFIG. 10D ), followed by digital decimators with the data eventually interfaced to FPGAs or Graphical Processing Units (GPUs). These processed signals from multiple piezoelectric elements may be then reconstructed into images. The signal waveform driving the transmit driver can also be a frequency varying signal or a phase varying signal or other complex coded signals, such as chirps or Golay codes -
FIG. 10E shows a schematic diagram of apiezoelectric element 1050 according to embodiments of the present disclosure. As depicted, thepiezoelectric element 1050 may include two sub elements 1051-1 and 1051-2. In embodiments, each sub element may be a two terminal device, i.e. it may have one top electrode 1052-1 (or 1052-2), one bottom electrode 1054-1 (or 1054-2), and one piezoelectric layer 1056-1 (or 1056-2). In embodiments, the top electrode (O) 1052-1 may be electrically connected to the top electrode (O) 1052-2 by a common conductor (O) 1051, and the bottom electrode (X) 1054-1 may be electrically connected to the bottom electrode (X) 1054-2 by a common conductor (X) 1058. In embodiments, thepiezoelectric element 1050 may be disposed on one membrane or each sub element may be disposed on a separate membrane. -
FIG. 10F shows a schematic diagram of apiezoelectric element 1070 according to embodiments of the present disclosure.FIG. 10G shows a bottom view of thepiezoelectric element 1070 according to embodiments of the present disclosure. As depicted, thepiezoelectric element 1070 may include: a top electrode (O) 1074, a first bottom electrode (X) 1080; a second bottom electrode (T) 1076; apiezoelectric layer 1075 disposed between the top and bottom electrodes; and threeconductors top electrodes FIG. 10G , the conductors are not shown.) In embodiments, each of the first and second bottom electrodes has an annular shape and the second bottom electrode (X) 1076 surrounds the first bottom electrode (T) 1080. -
FIG. 10H shows a schematic diagram of apiezoelectric element 1085 according to embodiments of the present disclosure. As depicted, thepiezoelectric element 1085 may utilize transverse mode of operation and include: asubstrate 1091, amembrane 1090 secured to the substrate at one end; a bottom electrode (O) 1092 that is electrically coupled to aconductor 1089; apiezoelectric layer 1088; and atop electrode 1086 that is electrically coupled to aconductor 1087. In embodiments, themembrane 1090 may be secured to thesubstrate 1091 at one end so as to vibrate in the transverse mode, as indicated by anarrow 1093, i.e., the piezoelectric element may operate in the transverse mode. - It is noted that the
piezoelectric element 1085 may have any suitable number of top electrodes. Also, it is noted that more than one piezoelectric element may be installed on themembrane 1090. It is further noted that thesubstrate 1091 andmembrane 1090 may be formed of one monolithic body and the membrane is formed by etching the substrate. -
FIG. 11 shows a schematic diagram of apiezoelectric element 1100 according to embodiments of the present disclosure. As depicted, an electrode (O) 1104 may be disposed on the top surface of apiezoelectric layer 1110 and electrically connected to a conductor (O) 1102 that may be connected to an electric circuit. The conductor (T1) 1108, conductor (T2) 1114 and conductor (X) 1118 may be connected to the bottom electrode (T1) 1106, electrode (T2) 1112 and electrode (X) 1116, respectively. The electrode (T1) 1106, the electrode (X) 1116 and the electrode (T2) 1112 may be disposed on the bottom surface of thepiezoelectric layer 1110. In embodiments, thepiezoelectric element 1100 may be disposed on one membrane or three separate membranes. -
FIGS. 10A-11 show piezoelectric elements (or sub elements) that each have either two terminal (O and X) or three terminals (O, X, and T) or four terminals (O, X, T1 and T2). However, it should be apparent to those of ordinary skill in the art that more than a piezoelectric element (or sub element) may have more than four terminals. For instance, a piezoelectric element may have top bottom (O) electrode and more than three bottom electrodes. -
FIG. 12-16 show steps for fabricating an exemplary piezoelectric element that has four terminals according to embodiments of the present disclosure.FIG. 12 show top view of amembrane 1206, which may be formed by forming amembrane layer 1204 on asubstrate 1202, and forming acavity 1208 in the substrate.FIG. 13 shows a cross sectional view of the structure inFIG. 12 , taken along the line 12-12. In embodiments, themembrane 1204 may be deposited by a suitable wafer processing technique. -
FIG. 14 shows a top view of a layer structure formed on themembrane layer 1204 andFIG. 15 shows a cross sectional view of the layer structure inFIG. 14 , taken along the line 14-14, according to embodiments of the present disclosure. As depicted, threetop electrodes 1223, 1224-1, and 1224-2, apiezoelectric layer 1220, and abottom electrode 1222, may be formed on themembrane layer 1204. In embodiments, thetop electrodes 1223, 1224-1, and 1224-2,piezoelectric layer 1220, andbottom electrode 1222 may be deposited by suitable wafer processing techniques, such as deposition, sputtering, patterning so on. -
FIG. 16 shows a top view of apiezoelectric element 1600 according to embodiments of the present disclosure. As depicted, threeconductors 1620, 1622-1, and 1622-2 may be electrically coupled to theelectrodes 1223, 1224-1, and 1224-2, respectively. Also, the conductors (O) 1610 may be electrically coupled to thebottom electrode 1222 through one ormore vias 1614. In embodiments, electrical grounds and source planes may be reached to thebottom electrode 1222 through thevias 1614 and the conductors (O) 1610. In embodiments, each of theconductors 1620, 1622-1, and 1622-2 may be connected to the ground or a DC bias voltage. In embodiments, theconductor 1620, may be connected to the ground or a first DC bias voltage, and the conductors 1622-1 and 1622-2 may be connected to the ground or a second DC bias voltage. - In general, due to the inherent non-symmetry in the crystalline structure of piezoelectric material, an electrical polarity develops, creating electric dipoles. In a macroscopic crystalline structure, the dipoles are by default found to be randomly oriented as shown in
FIG. 17A on the left. When the material is subjected to a mechanical stress, each dipole rotates from its original orientation toward a direction that minimizes the overall electrical and mechanical energy stored in the dipole. If all the dipoles are initially randomly oriented (i.e. a net polarization of zero), their rotation may not significantly change the macroscopic net polarization of the material; hence, the piezoelectric effect exhibited will be negligible. Therefore, during an initial state, the dipoles need to be more-or-less oriented in the same direction, which is referred to as poling process. The direction along which the dipoles align is known as the poling direction.FIG. 17 shows dipole orientations of a piezoelectric material before, during and after the poling process according to embodiments of the present disclosure. - As depicted, before the poling process, the individual dipole moments are not aligned. During the poling process, the dipole moments may be aligned to point the same direction. After poling, the dipole moments may remain fairly aligned, although there may still be some elements of random direction. In embodiments, the poling process may be performed by putting the piezoelectric material in a constant electric field at a high temperature to thereby force the dipoles to align.
- In embodiments, the
piezoelectric element 1000 inFIG. 10A may be poled so that the portions of the piezoelectric layer over the electrode (X) 1006 and electrode (T) 1012 may be poled in opposite directions, as shown, for example, inFIG. 10B where the portion of thepiezoelectric layer 1010 under the electrode (X) 1006 is poled in a first direction and the portion of thepiezoelectric layer 1010 under the electrode (T) 1012 is poled in a second direction that is opposite the first direction. This type of poling may result in boosted pressure output for the same transmit voltage, compared to the pressure output that would be obtained using the one poling direction configuration. Also, in embodiments, this type of poling may improve the receive sensitivity, where the reflected pressure waves may be differentially boosted to create a larger charge output, compared to the one poling direction configuration. -
FIG. 17B shows a flow chart of an illustrative process for poling apiezoelectric element 1600 according to embodiments of the present disclosure. To pole thepiezoelectric element 1600, thepiezoelectric element 1600 may be mounted inside a high temperature chamber (step 1728) and thebottom electrode 1222 may be coupled to the ground (step 1722), while the first top electrode 1224-1 (or 1224-2) may be coupled to a high positive voltage, such as 15 V, (step 1724) and the secondtop electrode 1223 may be coupled to a high negative voltage, such as −15 V, (step 1726). Then, thepiezoelectric element 1600 may be subject to a high temperature inside the chamber for extended period of time (step 1728). - Depending on the polarities of the first and second high voltages, the portions of the
piezoelectric layer 1220 under the two electrodes 1224-1 and 1224-2 may be polarized in the same or opposite direction to that of the portion of thepiezoelectric layer 1220 under theelectrodes 1223. In embodiments, for instance, poling may be implemented by application of high voltages across the electrodes at high temperature, typically 150° C., for 30 minutes for certain piezoelectric materials. For example, for a 1 μm thick piezoelectric layer, +15 V from the signal electrode to the T electrode and −15V from the signal electrode to the X electrode may be applied. Once the piezoelectric material is poled, then each of the X and T electrodes may be grounded or tied to a non-zero DC bias voltage while the conductor (O) 1610 may be connected to an ASIC chip so as to be driven by a transmit driver during the transmit operation or may be connected to an LNA (such as 1811 inFIG. 18A ) in the ASIC chip during the receive operation. In embodiments, a DC bias voltage may improve the sensitivity of thepiezoelectric element 1600. -
FIG. 18A shows animaging assembly 1800 according to embodiments of the present disclosure. As depicted, theimaging assembly 1800 may include: a transceiver substrate 1802 (which may be similar to the transceiver tile 210); and anASIC chip 1804 electrically coupled to the transceiver substrate. In embodiments, thetransceiver substrate 1802 may include one or more piezoelectric elements 1806, where each of the piezoelectric element may be disposed on one or more membranes. In embodiments, more than one piezoelectric element may be disposed on one membrane. In embodiments, poling of the piezoelectric layer may be performed after thetransceiver substrate 1802 is interconnected to theASIC chip 1804. It is noted that theASCI 1804 may be replaced by a suitable substrate that includes multiple circuits for driving the piezoelectric elements 1806 in thetransceiver substrate 1802. - In embodiments, poling may be performed on the transceiver tile/
substrate 1802 after the transceiver substrate is 3D interconnected to theASIC chip 1804. In the conventional piezoelectric elements, it is difficult to perform the poling process on a transceiver tile after the transducer tile is coupled to the circuits for driving the piezoelectric elements. It is due to the fact that poling requires application of high voltages to the circuits for controlling the piezoelectric elements and the high voltages may damage the circuits. In contrast, in embodiments, the poling may be performed on thetransducer substrate 1802 that is already integrated with theASIC chip 1804. In embodiments, theASIC chip 1804 may enable application of desired voltages on all first electrodes of the piezoelectric elements and high voltages may be applied to all second or additional electrodes. - In embodiments, each of the piezoelectric elements 1806 a-1806 n may have two or more electrodes and these electrodes may be connected to drive/receive electronics housed in the
ASIC chip 1804. In embodiments, each piezoelectric element (e.g. 1806 a) may include a top conductor that is electrically connected to a conductor (O) (e.g. 1814 a) and two bottom electrodes that are electrically connected to conductors (X, T) (e.g. 1810 a and 1812 a). In embodiments, theconductor 1810 a may be electrically coupled to a DC bias (X) 1832 a or the ground, and the conductor (T) 1812 a may be coupled to a DC bias (T) 1834 a or the ground. - In embodiments, the
ASIC chip 1804 may include one or more circuits 1842 a-1842 n that are each electrically coupled to one or more piezoelectric elements 1806 a-1806 n; and onecontrol unit 1840 for controlling the circuits 1842 a-1842 n. In embodiments, each circuit (e.g. 1842 a) may include a transmit driver (1813 a), a receiver amplifier (or shortly amplifier) (e.g. 1811 a), a switch (e.g. 1816 a) having one terminal electrically coupled to the conductor (O) (1814 a) and another terminal that toggles between the two conductors coupled to the transmitdriver 1813 a andamplifier 1811 a. During a transmit (Tx) mode/process, theswitch 1816 a may connect the transmitdriver 1813 a to thepiezoelectric element 1806 a so that a signal is transmitted to the top electrode of thepiezoelectric element 1806 a. During a receive (Rx) mode/process, theswitch 1816 a may connect theamplifier 1811 a to thepiezoelectric element 1806 a so that a signal is transmitted from the top electrode of thepiezoelectric element 1806 a to theamplifier 1811 a. - It is noted that the transmit
driver 1813 a may include various electrical components. However, for brevity, the transmitdriver 1813 a is represented by one driver. But, it should be apparent to those of ordinary skill in the art that the transmit driver may include a more complex driver with many functions. Electrical components for processing the received signals may be connected to theamplifier 1811 a, even though only oneamplifier 1811 a is shown inFIG. 18A . In embodiments, theamplifier 1811 a may be a low noise amplifier (LNA). In embodiments, thecircuit 1842 n may have the same or similar structure as the circuit 1842 a. - In embodiments, all of the DC biases (X) 1832 a-1832 n may be connected to the same DC bias or the ground, i.e., all of the conductors (X) 1810 a-1810 n may be connected to a single DC bias or the ground. Similarly, all of the DC biases (X) 1834 a-1834 n may be connected to the same DC bias or a different DC bias, i.e., all of the conductors (T) 1812 a-1812 n may be connected to a single DC bias or the ground.
- In embodiments, the conductors (X, T and O) 1810, 1812, and 1814 may be connected to the
ASIC chip 1804 using an interconnect technology—for instance, copper pillar interconnects or bumps (such as 1882 inFIG. 18B ), as indicated by anarrow 1880. In embodiments, the circuitry components in theASIC chip 1804 may communicate outside theASIC chip 1804 using aninterconnect 1830. In embodiments, theinterconnect 1830 may be implemented using bonding wires from pads on theASIC chip 1804 to another pad outside the ASIC chip. In embodiments, other types of interconnects, such as bump pads or redistribution bumps on theASIC chip 1804 may be used in addition to wire bonded pads. - In embodiments, the LNAs 1811 included in the circuits 1842 may be implemented outside the
ASIC chip 1804, such as part of a receive analog front end (AFE). In embodiments, a LNA may reside in theASIC chip 1804 and another LNA and programmable gain amplifier (PGA) may reside in the AFE. The gain of each LNA 1811 may be programmed in real time, allowing the LNA to be part of a time gain compensation function (TGC) needed for the imager. - In embodiments, the LNAs 1811 may be built using low voltage transistor technologies and, as such, may be damaged if they are exposed to high transmit voltages that the conventional transducers need. Therefore in the conventional systems, a high voltage transmit/receive switch is used to separate the high transmit voltages from the low voltage receive circuitry. Such a switch may be large and expensive, use High Voltage (HV) processes, and degrade the signal sent to LNA. In contrast, in embodiments, low voltages may be used, and as such, the high voltage components of the conventional system may not be needed any more. Also, in embodiments, by eliminating the conventional HV switch, the performance degradation caused by the conventional HV switch may be avoided.
- In embodiments, the piezoelectric elements 1806 may be connected to the LNAs 1811 during the receive mode by the switches 1816. The LNAs 1811 may convert the electrical charge in the piezoelectric elements 1806 generated by the reflected pressure waves exerting pressure on the piezoelectric elements, to an amplified voltage signal with low noise. The signal to noise ratio of the received signal may be among the key factors that determine the quality of the image being reconstructed. It is thus desirable to reduce inherent noise in the LNA itself. In embodiments, the noise may be reduced by increasing the transconductance of the input stage of the LNAs 1811, such as using more current in the input stage. The increase in current may cause the increase in power dissipation and heat. In embodiments, pMUTs 1806 may be operated with low voltages and be in close proximity to the
ASIC chip 1804, and as such, the power saved by the low voltage pMUTs 1806 may be utilized to lower noise in the LNAs 1811 for a given total temperature rise acceptable, compared to conventional transducers operated with high voltages. -
FIG. 18B shows a schematic diagram of animaging assembly 1850 according to embodiments of the present disclosure. In embodiments, thetransceiver substrate 1852 andASIC chip 1854 may be similar to thetransceiver substrate 1802 andASIC chip 1804, respectively. In the conventional systems, the electronics for driving piezoelectric transducers is typically located far away from the piezoelectric transducers and are connected to the piezoelectric transducers using a coax cable. In general, the coax cable increases parasitic loading, such as additional capacitance, on the electronics, and the additional capacitance causes loss in critical performance parameters, such as increase in noise and loss of signal power. In contrast, as depicted inFIG. 18B , the transmit driver or drivers (or equivalently circuits) 1862 a-1862 n may be connected directly to piezoelectric elements (or equivalently pixels) 1856 a-1856 n+i using a low impedance three dimensional (3D) interconnect mechanism (as indicated by an arrow 1880), such as Cu pillars orsolder bumps 1882, or wafer bonding or similar approaches or a combination of such techniques. In embodiments, upon integrating thetransceiver substrate 1852 to theASIC chip 1854, the circuits 1862 may be located less than 100 μm vertically (or so) away from the piezoelectric elements 1856. In embodiments, any conventional device for impedance matching between driver circuits 1862 and piezoelectric elements 1856 may not be required, further simplifying design and increasing power efficiency of theimaging assembly 1800. Impedance of the circuits 1862 may be designed to match the requirement of the piezoelectric elements 1856. - In embodiments, in
FIG. 18A , each of the piezoelectric elements 1806 a-1806 n may be electrically connected to a corresponding one of the circuits 1842 a-1842 n located in theASIC chip 1804. In embodiments, this arrangement may allow the imager to generate three-dimensional images. Similarly, inFIG. 18B , each of the piezoelectric elements 1856 a-1856 m may have three leads represented by X, T, and O. The leads from each of the piezoelectric elements may be electrically connected to a corresponding one of the circuits 1862 a-1862 m located in theASIC chip 1854 by the interconnect means 1882. In addition, in embodiments, a line of piezoelectric elements, such as 1856 n+1-1856 n+i may be electrically coupled to one common circuit 1862 n. In embodiments, the transmit driver circuit 1862 n may be implemented with one transmit driver. In alternative embodiment, the transmit driver circuit 1862 n may be implemented with multilevel drivers to facilitate various imaging modes. - It should be apparent to those of ordinary skill in the art that the
ASIC chip 1854 may have any suitable number of circuits that are similar to the circuit 1862 n. In embodiments, thecontrol unit 1892 may have capability to configure the piezoelectric elements, either horizontally or vertically in a two dimensional pixel array, configure their length and put them into transmit or receive or poling mode or idle mode. In embodiments, thecontrol unit 1892 may perform the poling process after thetransceiver substrate 1852 is combined with theASIC chip 1854 by the threedimensional integration technique 1882. In embodiments, the transmit driver circuit 1843 may be implemented with multilevel drive as shown inFIG. 34 , where the transmit driver output may have more than 2 output levels.FIG. 34 shows an embodiment where the output level may be 0V or 6V or 12V. It is understood that that these voltages can be different, for example they can be −5V, 0V and +5V. The transmit driver can also be a 2 level driver with drive signal as shown inFIG. 33 . - In embodiments,
lead lines 1882 a-1882 n may be signal conductors that are used to apply pulses to the electrodes (O) of the piezoelectric elements 1856. Similarly, the lead lines 1884 a-1884 n, 1886 a-1886 n, and 1888 a-1888 n may be used to communicate signals with the piezoelectric elements 1856 a-1856 n+i. It is noted that other suitable number of lead lines may be used to communicate signals/data with theimaging assembly 1800. - In embodiments, each of the lead lines (X) 1886 and lead lines (T) 1888 may be connected to the ground or a DC bias terminal. In embodiments, the
digital control lead 1894 may be a digital control bus and include one or more leads that are needed to control and address the various functions in theimaging assembly 1850. These leads, for example, may allow programmability of theASIC chip 1854 using communication protocols, such as Serial Peripheral Interface (SPI) or other protocols. - In embodiments, the piezoelectric elements 1806 (or 1856) and the control electronics/circuits 1842 (or 1862) may be developed on the same semiconductor wafer. In alternative embodiments, the transceiver substrate 1802 (or 1852) and ASIC chip 1804 (or 1854) may be manufactured separately and combined to each other by a 3D interconnect technology, such as metal interconnect
technology using bumps 1882. In embodiments, the interconnect technology may eliminate the low yield multiplication effect, to thereby lower the manufacturing cost and independently maximize the yield of components. - In embodiments, lead lines 1862 a-1862 n may be signal conductors that are used to apply pulses to the electrodes (O) of the piezoelectric elements 1806. Similarly, the lead lines 1864 a-1864 n, 1866 a-1866 n, and 1868 a-1868 n may be used to communicate signals with the piezoelectric elements 1806 a-1806 n. It is noted that other suitable number of lead lines may be used to communicate signals/data with the
imaging assembly 1800. - As discussed above, the LNAs 1811 may operate in a charge sensing mode and each have a programmable gain that may be configured in real time to provide gain compensation. In embodiments, as discussed in conjunction with
FIG. 3B , one or more temperature sensors may be installed in theimager 120. In embodiments, the ASIC may receive temperature data from the temperature sensor(s) and, using the temperature data, adjust the imaging frame rate or a signal-to-noise ratio of the LNAs 1811. -
FIG. 19A-1 shows a top view of atransceiver substrate 1902 and anASIC chip 1906 andFIG. 19A-2 shows a side view ofimaging assembly 1901 according to embodiments of the present disclosure. As depicted, theimaging assembly 1901 may include thetransceiver substrate 1902 that is interconnected to theASIC chip 1906 by suitable interconnection mechanism, such as bumps. Hereinafter, the bumps are shown as the interconnection mechanism, even though other suitable interconnection mechanisms may be used in place of the bumps. - In embodiments, each
piezoelectric element 1904 may be a two terminal piezoelectric element, where the piezoelectric element is symbolically represented by two electrodes O and X. In embodiments, thecircuit element 1908 may include electrical components for driving the correspondingpiezoelectric element 1904, where thecircuit element 1908 is symbolically represented by a transmit driver. In embodiments, animaging element 1910 may include apiezoelectric element 1904 and acircuit element 1908, and thepiezoelectric element 1904 may be electrically connected to thecircuit element 1908 by two bumps. -
FIG. 19B-1 shows a top view of atransceiver substrate 1911 and anASIC chip 1913 andFIG. 19B-2 shows a side view ofimaging assembly 1915 according to embodiments of the present disclosure. As depicted, theimaging assembly 1915 may be similar to theimaging assembly 1901, with the difference that two sub piezoelectric elements are electrically coupled to two sub circuit elements by three bumps. More specifically, thepiezoelectric element 1912 includes two sub piezoelectric elements, each sub piezoelectric element may be a two terminal piezoelectric element, and the X electrodes of the two sub piezoelectric elements may be electrically coupled to each other. In embodiments, each O electrode of the sub piezoelectric element may be electrically coupled to a transmit driver of the correspondingsub circuit element 1914 and the X electrodes of the two sub piezoelectric elements may be electrically coupled to a common electrical terminal of thecircuit element 1914. As such, in eachimaging element 1917, thepiezoelectric element 1912 may be interconnected to thecircuit element 1914 by three bumps. -
FIG. 19C shows a top view of atransceiver substrate 1920 and anASIC chip 1924 according to embodiments of the present disclosure. As depicted, thetransceiver substrate 1920 may be similar to thetransceiver substrate 1902, with the difference that three sub piezoelectric elements are electrically coupled to three sub circuit elements by four bumps. More specifically, thepiezoelectric element 1922 includes three sub piezoelectric elements, each sub piezoelectric element may be a two terminal piezoelectric element, and the X electrodes of the three sub piezoelectric elements may be electrically coupled to each other. In embodiments, each O electrode of the sub piezoelectric element may be electrically coupled to a transmit driver of the corresponding sub circuit element and the X electrodes of the three sub piezoelectric elements may be electrically coupled to a common electrical terminal of thecircuit element 1926. As such, thepiezoelectric element 1922 may be interconnected to thecircuit element 1926 by four bumps. - It is noted that the piezoelectric element may have more than two terminals.
FIG. 19D shows a top view of atransceiver substrate 1930 and anASIC chip 1934 according to embodiments of the present disclosure. As depicted, thetransceiver substrate 1930 may be similar to thetransceiver substrate 1902, with the difference that eachpiezoelectric element 1932 may be electrically coupled to acircuit element 1936 by three bumps. In embodiments, the O electrode may be coupled to a transmit driver of thecircuit element 1936 by a bump, and the X and T electrodes may be coupled to thecircuit element 1936 by two bumps. -
FIG. 19E shows a top view of atransceiver substrate 1940 and anASIC chip 1944 according to embodiments of the present disclosure. As depicted, thepiezoelectric element 1942 may include two sub piezoelectric elements, each sub piezoelectric element may be a three terminal piezoelectric element, and the X electrodes of the two sub piezoelectric elements may be electrically coupled to each other. In embodiments, each O electrode of the sub piezoelectric element may be electrically coupled to a transmit driver of the corresponding sub circuit element by a bump and the X electrodes of the two sub piezoelectric elements may be electrically coupled to thecircuit element 1946 by a bump and each T electrode of the sub piezoelectric element may be electrically coupled to thecircuit element 1946 by a bump. As such, thepiezoelectric element 1942 may be interconnected to thecircuit element 1946 by five bumps. -
FIG. 19F shows a top view of atransceiver substrate 1950 and anASIC chip 1954 according to embodiments of the present disclosure. As depicted, thepiezoelectric element 1952 may include two sub piezoelectric elements, each sub piezoelectric element may be a three terminal piezoelectric element, the X electrodes of the two sub piezoelectric elements may be electrically coupled to each other, and T electrodes of the two sub piezoelectric elements may be electrically coupled to each other. In embodiments, each O electrode of the sub piezoelectric element may be electrically coupled to a transmit driver of the corresponding sub circuit element by a bump and the X electrodes of the two sub piezoelectric elements may be electrically coupled to thecircuit element 1956 by a bump. Also, the T electrodes of the two sub piezoelectric elements may be electrically coupled to thecircuit element 1956 by a bump. As such, thepiezoelectric element 1952 may be interconnected to thecircuit element 1956 by four bumps. -
FIG. 19G shows a top view of atransceiver substrate 1960 and anASIC chip 1964 according to embodiments of the present disclosure. As depicted, thepiezoelectric element 1962 may include two sub piezoelectric elements, each sub piezoelectric element may be a three terminal piezoelectric element, the O electrodes of the two sub piezoelectric elements may be electrically coupled to each other, the X electrodes of the two sub piezoelectric elements may be electrically coupled to each other, and the T electrodes of the two sub piezoelectric elements may be electrically coupled to each other. As such, thepiezoelectric element 1962 may be interconnected to thecircuit element 1966 by three bumps. -
FIG. 20 shows a schematic diagram of an m×narray 2000 of piezoelectric elements 2002-11-2002-mn according to embodiments of the present disclosure. As depicted, each piezoelectric element may be a two terminal piezoelectric element (such aspiezoelectric element 900 inFIG. 9 ) and have an electrode (O) (e.g. 2003-11) electrically coupled to a conductor (O) (e.g. 2004-11) and an electrode (X) electrically connected to ground or a DC bias voltage via a common conductor (X) 2007. In embodiments, each signal conductor (O) may be managed independently by a circuit element (such as 1908). In embodiments, each conductor (O) (e.g. 2004-mn) may be electrically coupled to a transmit driver of a circuit element while all of the X electrodes (2006-11-2006-mn) of the piezoelectric element array may be connected to a common conductor (X) 2007. In embodiments, thearray 2000 may be disposed on a transceiver substrate and electrically coupled to an ASIC chip by interconnection mechanism, such as m×n+1 bumps, as discussed in conjunction withFIGS. 19A-19G . More specifically, the m×n conductors (O) 2004-11-2004-mn may be coupled to m×n transmit drivers of ASIC chip by m×n bumps and the common conductor (X) 2007 may be coupled to the ASIC chip by one bump. In embodiments, such an exemplary arrangement as described here is used to perform 3D imaging, where each piezoelectric element, including at least one sub piezoelectric element, can provide unique information in the array. In embodiments, each piezoelectric element may have one or more membranes and vibrate in multiple modes and frequencies of the membranes. In embodiments, eachpiezoelectric element 2002 may be driven by pulses that havevoltage profiles FIGS. 33 and 34 . - In embodiments, the O electrodes in each column (e.g. 2003-11-2003-m 1) may be electrically coupled to a common conductor. For instance, the circuit elements in the ASIC chip may be electronically controlled so that the O electrodes in each column may be electrically coupled to each other. In such a configuration, the O electrodes in each column may receive the same electrical pulse through a common transmit driver or per a multiplicity of drivers with identical electrical drive signals during the transmit mode. Similarly, the O electrodes in each column may simultaneously transmit the electrical charge to a common amplifier during the receive mode. Stated differently, the piezoelectric element in each column may be operated as a line unit (or equivalently line element).
-
FIG. 21 illustrates a schematic diagram of an n×narray 2100 of piezoelectric elements 2102-11-2012-mn according to embodiments of the present disclosure. As depicted, each piezoelectric element may be a three terminal piezoelectric element and include the electrodes O, X, and T. In embodiments, the X electrodes (e.g. X11, X21, . . . , Xm1) may be connected column wise in a serial manner and all of the X electrodes (X11-Xmn) may be electrically coupled to a common conductor (X) 2106. The T electrodes (e.g. T11, T21, . . . , Tm1) may be connected column wise in a serial manner and all of the T electrodes (T11-Tmn) may be electrically coupled to a common conductor (T) 2108. A column of elements such as 2102-11, 2102-21 through 2102-m 1 when connected together as described in embodiments make up a line element or a column. In embodiments, each of the O electrodes 2103-11-2103-mn may be electrically coupled to a transmit driver of a corresponding circuit element in an ASIC chip via one of the conductors O11-Omn. In embodiments, thearray 2100 may be disposed on a transceiver substrate and electrically coupled to an ASIC chip by interconnection mechanism, such as m×n+2 bumps. - In embodiments, the O electrodes in each column (e.g. 2103-11-2103-m 1) may be electrically coupled to a common conductor. In such a configuration, the O electrodes in each column may receive the same electrical pulse through a common transmit driver during the transmit mode. Similarly, the O electrodes in each column may simultaneously transmit the electrical charge to a common amplifier during the receive mode. Stated differently, the piezoelectric element in each column is operated as a line unit. In embodiments each of the O electrodes in a column may be connected to a dedicated transmit driver, where the input signal of the transmit drivers for all elements in a column are identical, thus creating a substantially identical transmit drive output to appear on all piezoelectric elements during a transmit operation. Such a line element is electronically controlled on a per element basis, since each element has it own transmit driver. This has advantages in driving large capacitive line elements, where each element has smaller capacitance and delays in timing can be minimized for elements on a column. In embodiments, in a receive mode, charge from all elements in a column can be sensed by connecting it to a LNA, as is done by 2D imaging. For 3D imaging, charge for each element is sensed by connecting the O electrodes of each element to a LNA during a receive mode operation.
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FIG. 22 illustrates a schematic diagram of an m×narray 2200 of piezoelectric elements 2202-11-2202-mn according to embodiments of the present disclosure. As depicted, thearray 2200 may be similar to thearray 2100, with the differences that the X electrodes (e.g. X12-Xm2) in a column may be connected to a common conductor (e.g. 2206-1) and the T electrodes (e.g. T12-Tm2) in a column may be connected to a common conductor (e.g. 2208-1). As such, the X electrodes (or T electrodes) in the same column may have the same voltage potential during operation. In embodiments, each of the O electrodes may be electrically coupled to a transmit driver of a corresponding circuit element in an ASIC chip via one of the conductors O11-Omn. In embodiments, thearray 2200 may be disposed on a transceiver substrate and electrically coupled to an ASIC chip by interconnection mechanism, such as m×n+2n bumps. - Compared to
array 2100, thearray 2200 may use more bumps for connecting the T and X electrodes to the ASIC chip. In general, an increase in the number of connections for T and X between the ASIC chip and the piezoelectric array may reduce impedance in the X and T conductors when connected in parallel to the ground or DC bias sources and reduce the crosstalk. Crosstalk refers to the coupling of signals from an imaging element to another one, and may create interference and reduce the image quality. Spurious electrical coupling may be created when any voltage drop due to current flowing in X and T lines appear across a piezoelectric element that ideally should not be exposed to that voltage. In embodiments, when the piezoelectric element is not transmitting or receiving under electronic control, the X, T, and O electrodes may be locally shorted. Alternatively, the idle electrodes have the O electrodes grounded, leaving the X electrodes connected to other X electrodes in the array and the T electrodes connected to other T electrodes in the array. -
FIG. 23 illustrates a schematic diagram of an m×narray 2300 of piezoelectric elements 2302-11-2302-mn according to embodiments of the present disclosure. As depicted, thearray 2300 may be similar to thearray 2100, with the difference that each piezoelectric element may be a five terminal piezoelectric element, i.e., each piezoelectric element may include one bottom electrode (O) and four top electrodes (two X electrodes and two T electrodes). In embodiments, two X electrodes of each piezoelectric element may be connected column wise in a serial manner and all of the 2m×n X electrodes may be electrically coupled to a common conductor (X) 2306. Similarly, the two T electrodes of each piezoelectric element may be connected column wise in a serial manner and all of the 2m×n T electrodes may be electrically coupled to a common conductor (T) 2308. In embodiments, each of the O electrodes may be electrically coupled to a transmit driver of a corresponding circuit element in an ASIC chip via one of the conductors O11-Omn. In embodiments, thearray 2300 may be disposed on a transceiver substrate and electrically coupled to an ASIC chip by interconnection mechanism, such as m×n+2 bumps. -
FIG. 24 illustrates a schematic of an m×narray 2400 of piezoelectric elements 2402-11-2402-mn according to embodiments of the present disclosure. As depicted, thearray 2400 may be similar to thearray 2200, with the differences that each piezoelectric element may be a five terminal piezoelectric element: one bottom electrode (O) and four top electrodes (two X electrodes and two T electrodes). In embodiments, the two X electrodes of each piezoelectric element may be electrically connected in a column wise direction to a conductor (e.g. 2406-1), and the two T electrodes of each piezoelectric element may be electrically connected in a column wise direction to a common conductor (e.g. 2408-1). In embodiments, each of the O electrodes may be electrically coupled to a transmit driver of a corresponding circuit element in an ASIC chip via one of the conductors O11-Omn. In embodiments, thearray 2400 may be disposed on a transceiver substrate and electrically coupled to an ASIC chip by interconnection mechanism, such as m×n+2n bumps. -
FIG. 25 illustrates a schematic diagram of an m×narray 2500 of piezoelectric elements 2502-11-2502-mn according to embodiments of the present disclosure. As depicted, thearray 2500 may be similar to thearray 2100 in that each piezoelectric element may have one bottom electrode (O) and two top electrodes (T), but have the differences that all of the two top electrodes (T) of the piezoelectric elements along a column (e.g. 2502-11-2502-m 1) may be electrically connected to a common conductor (e.g. 2508-1). In embodiments, each of the O electrodes may be electrically coupled to a transmit driver of a corresponding circuit element in an ASIC chip via one of the conductors O11-Omn. In embodiments, thearray 2500 may be disposed on a transceiver substrate and electrically coupled to an ASIC chip by interconnection mechanism, such as m×n+n bumps. -
FIG. 26 illustrates a schematic of an m×narray 2600 of piezoelectric elements 2602-11-2602-mn according to embodiments of the present disclosure. As depicted, thearray 2600 may have similar electrical connections to thearray 2100, i.e., all of the X electrodes in the piezoelectric elements may be electrically coupled to acommon conductor 2606 and all of the T electrodes in the piezoelectric elements may be electrically coupled to acommon conductor 2608. Thearray 2600 may be different from thearray 2100 in that the top electrodes (X, T) of one piezoelectric element (e.g. 2602-11) may have the same or different geometrical shapes from the top electrodes (X, T) of another piezoelectric element (e.g. 2602-21). - For the piezoelectric arrays 2000-2500, the piezoelectric elements in each piezoelectric array may be the same or different from each other. For instance, the projection areas of the two top electrodes of one piezoelectric element 2202-11 may have same or different shapes from the projection areas of the two top electrodes of another piezoelectric element 2202-
n 1. -
FIG. 27 illustrates a schematic diagram of an m×narray 2700 of piezoelectric elements 2702-11-2702-mn according to embodiments of the present disclosure. As depicted, each piezoelectric element may include two signal electrodes (O) and one common electrode (X). In embodiments, each signal electrode (O) may be electrically coupled to a transmit driver of a corresponding circuit element of an ASIC chip. For instance, the piezoelectric element 2702-11 may include two signal conductors O111 and O112 that may be electrically coupled to two circuit elements in an ASIC chip, respectively, where each signal electrode may develop electrical charge during the receive mode. In embodiments, thearray 2700 may be disposed on a transceiver substrate and electrically coupled to an ASIC chip by interconnection mechanism, such as 2m×n+1 bumps. In embodiments, all of the T electrodes in thearray 2700 may be electrically coupled to the ground or a DC bias voltage via the common conductor (T) 2708. - In embodiments, the signal conductors (O) in the arrays in
FIGS. 20-27 may be electrically coupled to a circuit element, where the circuit element may include a transistor switch that is similar to the switch 1816 inFIG. 18A , i.e., the switch may toggle between the transmit driver and an amplifier during the transmit and receive modes, respectively so that the O electrode may generate pressure wave during the transmit mode and develop electrical charge during the receive mode. -
FIG. 28 shows an exemplary embodiment of animaging system 2800 according to embodiments of the present disclosure. As depicted, theimaging system 2800 may include an array of piezoelectric elements 2802-11-2802-mn and circuit elements for controlling/communicating with the array. In embodiments, each of the piezoelectric elements 2802-11-2802-mn may include three electrodes; first and second signal (O) electrodes and a T electrode. (For the purpose of illustration, the first and second O electrodes in each piezoelectric element refer to the left and right O electrodes of each piezoelectric element inFIG. 28 .) In embodiments, all of T electrodes in thearray 2800 may be electrically coupled to the ground or DC bias voltage via the conductor (T) 2808. In embodiments, the first O electrodes of the piezoelectric elements in a column may be electrically coupled to a common conductor (e.g. O11) and the second O electrodes of the piezoelectric elements in the same column may be electrically coupled to another common conductor (e.g. O12). In embodiments, during the receive mode, each of the first and second signal O electrodes may develop electrical charge that may be processed by a corresponding circuit. - In embodiments, the first set of conductors O11, O21, . . . , On1 may be electrically coupled to the amplifiers 2810-1-2810-n, respectively, where the electrical charge developed in a column of the first O electrodes may be transferred to a corresponding amplifier via one of the O conductors. In embodiments, the second set of conductors O12, O22, . . . , On2 may be electrically coupled to the switches 2812-1-2812-n, respectively. In embodiments, each switch (e.g. 2812-1) may be connected to a transit driver (e.g. 2816-1) during the transmit mode/process so that a signal pulse may be transmitted to a column of second O electrodes in the piezoelectric elements (e.g. 2801-11-2802-m 1). In embodiments, each switch (e.g. 2812-1) may be connected to a signal amplifier (e.g. 2814-1) during the receive mode/process so that electrical charge developed in a column of second O electrodes in the piezoelectric elements (e.g. 2801-11-2802-m 1) may be transmitted to the amplifier. In embodiments, the piezoelectric elements 2802-11-2802-mn may be disposed in a transceiver substrate while the switches 2812-1-2812-n, transmit drivers 2816-1-2816-n, and amplifies 2810-1-2810-n and 2814-1-2814-n may be disposed in an ASIC chip, where the transceiver substrate may be electrically coupled to the ASIC chip by 2n+1 bumps.
- In embodiments, a column of the first electrodes may be electrically coupled to a common conductor (e.g. O11) and a column of the second electrodes may be electrically coupled to another common conductor (e.g. O12). As such, in embodiments, the
imaging system 2800 may be operated as a line imager, i.e., each of the first set of conductors O11-On2 may operate as a transmit unit and/or a receive unit during operation. As discussed above, during the receive mode, the electrical charge developed in a column of the first O electrodes connected to a conductor (e.g. O11) may be transmitted to an amplifier (e.g. 2810-1), which may be a low noise amplifier. Then, the amplifier may amplify the electrical charge signal and convert the charge signal to an output voltage. Thus, each column of the first O electrodes may operate as a receiving line imager. In embodiments, during the receive mode, the electrical charge developed in a column of the second O electrodes connected to a conductor (e.g. O12) may be transmitted to a signal amplifier (e.g. 2814-1), which may be a low noise amplifier, via a switch (e.g. 2812-1). Then, the amplifier may amplify the electrical charge signal and convert the charge signal to an output voltage. Thus, each column of the second O electrodes may operate as a receiving line imager. In embodiments, during the transmit mode, the electrical signal pulse may be transmitted from the transmit driver (e.g. 2816-1) to a column of the second O electrodes connected to a conductor (e.g. O12) via a switch (e.g. 2812-1) so that the set of second O electrodes may generate pressure waves. Thus, each column of second O electrodes may operate as a transmit line unit. - In embodiments, the
switches 2812, which may be transistor switches, may be set to a neutral position (i.e., they are not coupled to either transmit drivers or amplifiers) during the receive mode. In such a case, only the second set of conductors O12, O22, . . . , On2 may operate during the receive mode. - In embodiments, the transmit driver (e.g. 2816-1) may send a signal to a column of piezoelectric elements (e.g. 2802-11-2802-m 1) via a conductor (O12) and simultaneously, an amplifier (e.g. 2810-1) may receive electrical charge signal from the same column of piezoelectric elements (e.g. 2802-11-2802-m 1). In such a case, each piezoelectric element (e.g. 2802-11) in a column may receive a signal from the transmit driver (e.g. 2816-1) through one conductor (e.g. O12) and simultaneously transmit an electrical charge signal to an amplifier (e.g. 2810-1) via another conductor (e.g. O11), i.e., the
imaging system 2800 may perform simultaneous transmitting and receiving modes. This simultaneous operation of transmitting and receiving modes may be very advantageous in continuous mode Doppler Imaging, where a high blood flow velocity may be imaged, compared to pulsed Doppler Imaging. - In embodiments, a line unit, which refers to a column of O electrodes electrically coupled to a common conductor, may operate as a transmit unit or a receive unit or both. For instance, electrical signals may be sequentially transmitted to the conductors O12, O22, . . . , On2 so that the line elements sequentially generate pressure waves during the transmit mode, and the reflected pressure waves may be processed and combined to generate a two dimensional image of the target organ in the receive mode. In another example, electrical drive signals may be simultaneously transmitted to the conductors O12, O22, . . . , On2 during the transmit mode and the reflected pressure waves may be processed at the same time using charge generated from conductors O11, O12 to On1 to simultaneously transmit and receive ultrasound to create a two dimensional image. Conductors O12-On2 may also be used to receive charge from the piezoelectric line elements in a receive mode of operation.
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FIG. 29 shows an exemplary embodiment of animaging system 2900 according to embodiments of the present disclosure. As depicted, theimaging system 2900 includes an array of piezoelectric elements 2902-11-2902-mn and each piezoelectric element may include first and second signal (O) electrodes and a T electrode. In embodiments, all of the T electrodes in the array may be electrically coupled to one common conductor (T) 2908; each row of the first O electrodes may be electrically connected to one of conductors O1-Om; and each column of the second O conductors may be electrically connected to aswitch 2912 via one of conductors O12-On2 and. In embodiments, each of the switches 2912-1-2912-n may toggle between a transmit driver (e.g. 2916-1) and an amplifier (e.g. 2914-1), which may be a low noise amplifier. In embodiments, each of the conductors O1-On may be connected to one of the amplifiers 2910-1-2910-m, which may be low noise amplifiers. - In embodiments, during the transmit mode, a signal may be transmitted from a transmit driver (e.g. 2916-1) to a column of second O electrodes via a conductor (e.g. O12) so that the column of piezoelectric elements may generate pressure waves as a line unit. During the transmit mode, each switch (e.g. 2912-1) may be toggled to a corresponding transmit driver (e.g. 2916-1).
- In embodiments, the
imaging system 2900 may process the reflected pressure waves in two different methods. In the first method, the amplifiers 2910-1-2910-n may receive electric charge signals from the first O electrodes, i.e., each amplifier may receive signals from a row of the first O electrodes. This method allows biplane imaging/mode, where for a two dimensional image, the biplane image may provide orthogonal perspectives. Also, this method may provide more than two dimensional imaging capability. The biplane imaging may be helpful for many applications, such as biopsy. It is noted that, in this method, the transmitting and receiving modes may be performed simultaneously. In the second method, theswitches 2912 may be toggled to theamplifiers 2914 so that each amplifier may receive and process the electrical charge signals from a corresponding column of the second O electrodes. - In embodiments, a line unit, which refers to a column (or row) of O electrode electrically coupled to an O conductor, may operate as a transmit unit or a receive unit or both. In embodiments, even though the conductors O1-Om are arranged in orthogonal directions to the conductors O12-On2, the directions may be electronically programmed and electronically adjustable. For instance, the gain of the
amplifiers -
FIG. 30 shows an embodiment of a piezoelectric element 3000 coupled to acircuit element 3001 according to embodiments of the present disclosure. As depicted, the piezoelectric element 3000 may include: a first sub-piezoelectric element 3021-1 and a second sub-piezoelectric element 3021-2. The piezoelectric element 3000 may include: a bottom electrode (X) 3002 that is shared by the first and second sub piezoelectric elements and coupled to a conductor (X) 3006. In embodiments, the first sub-piezoelectric element 3021-1 may include a signal (O)electrode 3003 that is electrically coupled to theamplifier 3010 via theconductor 3008. In embodiments, the second sub-piezoelectric element 3021-2 may include a signal (O)electrode 3004 that is electrically coupled to theswitch 3014 via theconductor 3012. - In embodiments, a
circuit element 3001 may be electrically coupled to the piezoelectric element 3000 and include twoamplifiers driver 3018. In embodiments, theswitch 3014 may have one end connected to theO electrode 3004 through theconductor 3012 and the other end that may toggle between theamplifier 3016 for the receive mode and a transmitdriver 3018 for the transmit mode. In embodiments, theamplifier 3016 may be connected to other electronics to further amplify, filter and digitize a receive signal, even though an amplifier is used to symbolically represent the electronics. The transmitdriver 3018 may be a multistage drive and may generate an output with two or more levels of a signaling. The signaling can be unipolar or bipolar. In embodiments, the transmitdriver 3018 may include a switch interconnecting an input to an output of a driver under electronic control of the driver, which is not explicitly shown InFIG. 30 . - In embodiments, the signal of the transmit
driver 3018 may be pulse width modulated (PWM), where, by controlling the pulse widths on a per element basis, a weighting function may be created on a transmitted ultrasound signal. This may for example perform a windowing function, where the transmit signal is weighted by a window function. In embodiments, the weighting coefficients may be achieved by varying the duty cycle of the transmit signal as is done during PWM signaling. This kind of operations may allow for transmit apodization, where the side lobe of a radiated signal are greatly attenuated, allowing for a higher quality image. - In embodiments, a transceiver array may be disposed in a transceiver substrate and include an n×n array of the piezoelectric element 3000 and an n×n array of the
circuit elements 3001 may be disposed in an ASIC chip, where each piezoelectric element 3000 may be electrically coupled to a corresponding one of the n×n array of thecircuit elements 3001. In such a case, the transceiver substrate may be interconnected to the ASIC chip by 3n2 bumps. In embodiments, each column (or row) of piezoelectric element array may be operated a line unit, as discussed in conjunction withFIGS. 28 and 29 . For instance, a same pulse may be simultaneously applied to a column of piezoelectric elements so that the column of piezoelectric elements may generate pressure waves simultaneously. It is noted that each piezoelectric element 3000 of the n×n array of piezoelectric elements may be coupled with a corresponding onecircuit element 3001 of the n×n array of circuit elements. - In embodiments, the sub-piezoelectric element 3021-1 may be in the receive mode during the entire operational period while the sub-piezoelectric element 3021-2 may be in either transmit or receive mode. In embodiments, the simultaneous operation of transmit and receive modes may allow the continuous mode Doppler imaging.
- In embodiments, when the transmit
driver 3018 transmits a signal to theelectrode 3004, the power levels of the pressure wave generated by the sub-piezoelectric element 3021-2 may be changed by using pulse width modulation (PWM) signaling. This is important, for example, when switching from B mode to Doppler Mode imaging, signal power transmitted into the human body may be long and if power levels are not reduced, tissue damage may occur. Typically, in the conventional systems, different fast settling power supplies are used for B Mode and various Doppler Mode imaging to allow transmit drive voltages to differ in the 2 cases to for example not create excessive power in Doppler mode. Unlike the conventional systems, in embodiments, the power level may be changed by using the PWM signals on the transmit without using the conventional fast settling power supplies. In embodiments, rapid switching between Doppler and B mode imaging is desired to co-image these modes together. In embodiments, the ground electrodes of the piezoelectric element may also be separated from each other and connected to the ground separately. In embodiments, this independent grounding may reduce the noise and result in faster settling times. In embodiments, power transmitted may also be reduced by reducing the height of the transmit columns under electronic control. This again facilitates use of same power supply for both Doppler and B mode and meet power transmission requirements in each mode. This also allows co imaging. -
FIG. 31 shows acircuit 3100 for controlling multiple piezoelectric elements according to embodiments of the present disclosure. In embodiments, thecircuit 3100 may be disposed in an ASIC chip, where the line (either column or row) of piezoelectric elements that is disposed in a transceiver substrate and the ASIC chip may be interconnected to the transceiver substrate by bumps. As depicted, thecircuit 3100 may include an array of circuit elements 3140-1-3140-n, where each circuit element may communicate signals with the O and X electrodes of the corresponding piezoelectric element. - As depicted in
FIG. 31 , each circuit element (e.g. 3140-1) may include a first switch (e.g. 3102-1), a second switch (e.g. 3104-1), a third switch (e.g. 3106-1), and a transmit driver (e.g. 3108-1). The output from the transmit driver (e.g. 3108-1) may be sent to an O electrode of the piezoelectric element via a conductor (e.g. 3110-1). During the transmit mode, each circuit element may receive a transmit driver (driving) signal 3124 through aconductor 3122. Each second switch (e.g. 3104-1), which may be transistor switches and controlled by acontrol unit 3150, may be turned on to transmit the signal 3124 to the transmit driver (e.g. 3108-1). (The electrical connections between thecontrol unit 3150 and other components in thecircuit 3100 are not shown inFIG. 31 .) The transmit driver (e.g. 3108-1) may perform logical decode, level shift, buffer the input signal and send the transit signal to the O electrode via the conductor (e.g. 3110-1). In embodiments, during the transmit mode, the first switch (e.g. 3102-1) may be turned off. - In embodiments, the
control unit 3150 may decide which piezoelectric elements need to be turned on during the transmit mode. If thecontrol unit 3150 decides not to turn on a second piezoelectric element, the first switch (e.g. 3102-2) and the second switch (e.g. 3104-2) may be turned off, while the third switch (e.g. 3106-2) may be turned on so that the O and X electrodes have the same electrical potential (i.e., there is a net zero volt drive across the piezoelectric layer). In in embodiments, thethird switches 3106 may be optional. - In embodiments, during the receive mode, the first switch (e.g. 3102-1) may be turned on so that the electrical charge developed in the O electrode may be transmitted through the conductors 3110-1 and 3120 to the
amplifier 3128. Then, theamplifier 3128 may receive electrical charge signal (or, equivalently, sensor signal) 3126 and amplify the sensor signal, where the amplified signal may be further processed to generate an image. During the receive mode, the second switch (e.g. 3104-1) and the third switch (e.g. 3106-1) may be turned off so that the received signal may not be interfered. It is noted that the entire array of the circuit element 3140-1-3140-n may share acommon amplifier 3128, simplifying the design of thecircuit 3100. In embodiments, the X electrodes of the piezoelectric elements may be electrically coupled to the ground or a DC bias voltage via the conductors 3112-1-3112-n, where the conductors 3112-1-3112-n may be electrically coupled to acommon conductor 3152. - In embodiments, the
circuit 3100 may be coupled to a column of piezoelectric elements (e.g. 2002-11-2002-n 1) inFIG. 20 . In embodiments, a plurality of circuits that are similar to thecircuit 3100 may be coupled with the multiple columns of piezoelectric elements in the array inFIG. 20 , and theconductors 3152 may be coupled to a common conductor (such as 2007 inFIG. 20 ). In embodiments, thecircuit 3100 may control a column of piezoelectric elements inFIGS. 20-27 . -
FIG. 32 shows acircuit 3200 for controlling multiple piezoelectric elements according to embodiments of the present disclosure. In embodiments, thecircuit 3200 may be disposed in an ASIC chip, where the line (either column or row) of piezoelectric elements that is disposed in a transceiver substrate and the ASIC chip may be interconnected to the transceiver substrate by bumps. As depicted, thecircuit 3200 may include an array of circuit elements 3240-1-3240-n, where each circuit element may communicate signals with the O, X, and T electrodes of the corresponding piezoelectric element. - As depicted in
FIG. 32 , each circuit element (e.g. 3240-1) may include a first switch (e.g. 3202-1), a second switch (e.g. 3204-1), a third switch (e.g. 3206-1), a fourth switch (e.g. 3207-1), and a transmit driver (e.g. 3208-1). The output from the transmit driver (e.g. 3208-1) may be sent to an O electrode of the piezoelectric element via a conductor (e.g. 3210-1). During the transmit mode, each circuit element may receive a transmit driver (or driving) signal 3224 through aconductor 3222. Each second switch (e.g. 3204-1), which may be a transistor switch and controlled by acontrol unit 3250, may be turned on to transmit the signal 3224 to the transmit driver (e.g. 3208-1). (The electrical connection between thecontrol unit 3250 and other components in thecircuit 3200 are not shown inFIG. 32 .) The transmit driver (e.g. 3208-1) may logically decode the signal, level shift it and buffer, the output signal and send the transmit output signal to the O electrode via the conductor (e.g. 3210-1). In embodiments, during the transmit mode, the first switch (e.g. 3202-1) may be turned off. - In embodiments, the
control unit 3250 may decide which piezoelectric elements need to be turned on during the transmit mode. If thecontrol unit 3250 decides not to turn on a second piezoelectric element, the first switch (e.g. 3202-2) and the second switch (e.g. 3204-2) may be turned off, while the third switch (e.g. 3206-2) and the fourth switch (e.g. 3207-2) may be turned on so that the O and X (and T) electrodes have the same electrical potential (i.e., there is a net zero volt drive across the piezoelectric layer). In in embodiments, the third and fourth switches (e.g. 3206-2 and 3207-2 may be optional. It is understood that 3 level signaling and a transmit driver that performs that is not shown explicitly. Similarly the connections to X T conductors and switches like 3206-2, 3207-2 are shown in a simplified manner. - In embodiments, during the receive mode, the first switch (e.g. 3202-1) may be turned on so that the electrical charge developed in the O electrode may be transmitted through the conductors 3210-1 and 3220 to the amplifier 3228. Then, the amplifier 3228 may amplify the electrical charge (or sensor) signal 3226, where the amplified signal may be further processed to generate an image. During the receive mode, the second switch (e.g. 3204-1), the third switch (e.g. 3206-1), and the fourth switch (e.g. 3207-1) may be turned off so that the received signal may not be interfered.
- It is noted that the entire array of the circuit element 3240-1-3240-n may share a common amplifier 3228, simplifying the design of the
circuit 3200. In embodiments, the X electrodes of the piezoelectric elements may be electrically coupled to the ground or a DC bias voltage via the conductors 3212-1-3212-n, where the conductors 3212-1-3212-n may be electrically coupled to a common conductor 3252. In embodiments, the T electrodes of the piezoelectric elements may be electrically coupled to the ground or a DC bias voltage via the conductors 3213-1-3213-n, where the conductors 3213-1-3213-n may be electrically coupled to acommon conductor 3254. - In embodiments, the
circuit 3200 may be coupled to a column of piezoelectric elements (e.g. 2102-11-2102-n 1) inFIG. 21 . In embodiments, a plurality of circuits that are similar to thecircuit 3200 may be coupled with the multiple columns of piezoelectric elements in the array inFIG. 21 , and the conductors 3252 may be coupled to a common conductor (such as 2106 inFIG. 20 ). Similarly, in embodiments, theconductors 3254 may be coupled to a common conductor (such as 2108 inFIG. 21 ). In embodiments, thecircuit 3200 may control a column of piezoelectric elements inFIGS. 20-27 . - In
FIGS. 22-32 , conductors are used to electrically couple an electrode to another electrode. For instance, the electrodes 2006-11-2006-m 1 are electrically coupled to aconductor 2007. In embodiments, the conductors inFIGS. 22-32 may be implemented in a variety of methods, such as metal interconnect layers deposited and patterned on the substrate on which the piezoelectric elements are disposed or on a different substrate, such as ASIC, that is connected to the substrate. -
FIGS. 33 and 34 showexemplary waveforms waveforms step waveform 3400. The actual voltage amplitude may vary typically from 1.8 V to 12.6 V. In embodiments, themultistep waveform 3400 or a waveform with more steps may reduce heating in the piezoelectric element and have advantages for use during certain imaging modes, such as Doppler or harmonic imaging. - In embodiments, the frequency of the pulses in the
waveforms - In embodiments, the circuits for driving the piezoelectric elements may further be designed such that the transmit output from the underlying membrane may be symmetrical in shape. In embodiments, for each signal pulse in the waveform 3300 (or 3400), the rising edge of the pulse may be substantially symmetrical to the falling edge of the pulse with respect to the center of the pulse. This symmetry lowers the harmonic content of the transmit signal, specially the second harmonic and other even order harmonics signal. In embodiments, the signal pulse in the waveform 3300 (or 3400) may be a pulse width modulated (PWM) signal.
-
FIG. 35 shows a transmit drive signal waveform according to embodiments of the present disclosure. As depicted, thesignal 3500 from the transmit driver may be symmetric and bipolar i.e., the magnitude (H1) and width (W1) of the peak maximum voltage are the same as the magnitude (H2) and width (W2) of the peak minimum voltage. Also, the slope of the risingedge 3502 is the same as the slope of the fallingedge 3504. In addition, the rising time W3 is the same as the fall time W4, where the fall time W4 refers to the time interval between the starting point of the fall and the reference voltage. Furthermore, the risingedge 3506 has the same slope as the risingedge 3502. - During the transmit operation, the transmit drive, e.g. 3018 in
FIG. 30 , may be driven by an electrical waveform, such as shown inFIGS. 33-34 .FIG. 36 shows output signals of various circuits in an imaging assembly according to embodiments of the present disclosure. In embodiments, thewaveform 3602 may be an output signal from the transmit driver, e.g. 3018 and transmitted to a piezoelectric element, e.g. 3000. In embodiments, as the piezoelectric element may have an inherent bandwidth, it may output asinusoidal output 3604 at its resonant frequency. If the output of the transmit driver connected to the O electrode of the piezoelectric element rises very slowly, it may not be able to charge the electrode to the desired final value and thus may cause low output signals, as shown inwaveform 3606, where final amplitude is smaller than in 3602. On the other hand, if the output signal of the transmit driver settles very quickly, the output signal of the transmit driver has larger bandwidth than the bandwidth limit of the piezoelectric element and therefore extra energy may be dissipated in heat. Therefore, in embodiments, as shown in thewaveform 3608, the piezoelectric element may be charged at a rate such that it is completely charged but not very quickly. In embodiments, thewaveform 3608, which represents the voltage potential across the top and bottom electrodes as a function of time, is closer in shape to the output of the transducer and because difference in shape is smaller, the input signal bandwidth and output signal bandwidth matches better, less loss of energy in heat occurs. In embodiments, drive impedance of transmit driver is optimized to reduce the loss of energy. Stated differently, the impedance of the transmit driver is designed to drive the piezoelectric element optimally with respect to heat dissipation and time constants needed for adequate voltage settling within a target time period. - In embodiments, the
imager 120 may use a harmonic imaging technique, where the harmonic imaging refers to transmitting pressure waves on the fundamental frequency of the membrane and receiving reflected pressure waves at second or higher harmonic frequencies of the membrane. In general, the images based on the reflected waves at the second or higher harmonic frequencies have higher quality than the images based on the reflected waves at the fundamental frequency. The symmetry in the transmit waveform may suppress the second or higher harmonic components of the transmit waves, and as such, the interference of these components with the second or higher harmonic waves in the reflected waves may be reduced, enhancing the image quality of the harmonic imaging technique. In embodiments, to reduce the second or higher harmonic waves in the transmit waves, thewaveform 3300 may have 50% duty cycle. - In
FIGS. 20-29 , the arrays may include multiple line units, where each line unit includes a plurality of piezoelectric elements that are electrically coupled to each other. In embodiments, the line units may be driven with multiple pulses that have phase differences (or equivalently delays). By adjusting the phases, the resultant pressure waves may be steered at an angle, which is referred to as beamforming. -
FIG. 37A shows a plot of the amplitude of a transmit pressure wave as a function of spatial location along the azimuth axis of the transducer according to embodiments of the present disclosure. If the piezoelectric elements in the array are arranged in 2 dimensions and the piezoelectric elements on a column in the Y direction are connected and have many columns along the X direction, the X direction is known as the azimuth direction and the Y direction is known as the elevation direction. As depicted inFIG. 37A , the transmit pressure wave includes the main lobe and multiple side lobes. The main lobe may be used to scan tissue targets and have high pressure amplitude. The side lobes have lower amplitude but degrade quality of images and therefore it is desirable to reduce their amplitude. -
FIG. 37B shows various types of windows for apodization process according to embodiments of the present disclosure. InFIG. 37B , x-axis represents position of a piezoelectric elements relative to the piezoelectric element at the center of an active window and y-axis represents the amplitude (or, weight applied to the piezoelectric element). As depicted, for therectangular window 3720, there is no weighting provided for any of the transmit lines, i.e., they are all at a uniform amplitude (i.e. symbolically 1). On the other hand, if the weighting function is implemented, as depicted by theHamming window 3722, lines at the center get a greater weighting than ones at the edges. For instance, to apply theHamming window 3722 to thetransducer tile 210 inFIG. 3B , the piezoelectric elements in the leftmost column (which is denoted as −N inFIG. 37B ) and the piezoelectric elements in the rightmost column (which is denoted as N inFIG. 37B ) may have the lowest weight, while the piezoelectric elements in the middle column may have the highest weight. This process is known as apodization. In embodiments, various types of window weighting may be applied, even though theHamming window 3722 shown is only meant to be one example. In embodiments, apodization may be implemented by a variety of means such as scaling the transmit driver output drive level differently for different lines by employing a digital to analog converter (DAC) or by keeping the same drive level but reducing the number of pixels on a line The net effect is the side lobe level can be reduced by use of apodization, where the weighting of the transmit drive varies based on where a particular line is located within the transmit aperture energized. - In embodiments, the reduction in the voltage of the pulses or waveforms may lower the temperature at the transducer surface. Alternately, for a given maximum acceptable transducer surface temperature, transducers operating at lower voltages may deliver better probe performance, resulting in better quality images. For example, for a probe with 192 piezoelectric elements to reduce power consumption, transmit pressure waves may be generated by using only a portion of probe (i.e., a subset of the piezoelectric elements) and scanning the remaining elements sequentially in time using a multiplexer. Therefore, at any point of time, in the conventional systems, only a portion of the transducer elements may be used to limit the temperature rise. In contrast, in embodiments, the lower voltage probe may allow more piezoelectric elements to be addressed simultaneously, which may enable increased frame rates of the images and enhanced image quality. Significant power is also consumed in the receive path where the received signal is amplified using LNAs. An imaging system typically uses a number of receive channels, with an amplifer per receiver channel. In embodiments, using temperature data, a number of receiver channels can be turned off to save power and reduce temperature.
- In embodiments, the apodization may be achieved by varying the number of piezoelectric elements in each line unit according to a window function. In embodiments, such a window approximation may be achieved by electronically controlling the number of piezoelectric elements on a line or by hardwiring the transducer array with the required number of elements.
- In general, the heat developed by a probe may be a function of the pulse duration in the transmit pulse/waveform. In general, to make the pressure waves penetrate deep in the target with better signal to noise ratio (SNR), a piezoelectric element may requires long pulse trains. However, this also degrades axial resolution and also generates more heat in the piezoelectric elements. So, in the conventional systems, the number of pulses emitted is small, sometimes one or two. Since longer pulses may create more heat energy, making it impractical for their use in the conventional systems. In contrast, in embodiments, the pulses and
waveforms - In embodiments, a layer of Polydimethylsiloxane (PDMS) or other impedance matching material may be spun over the transducer elements in
FIGS. 4-19 . This layer may improve the impedance matching between the transducer elements and the human body so that the reflection or loss of pressure waves at the interface between the transducer elements and the human body may be reduced. - In
FIGS. 20-29 , more than one line unit may be created by connecting pixels in the y-direction (or x-direction), where one line unit (or equivalently line element) refers to multiple piezoelectric elements that are electrically connected to each other. In embodiments, one or more line units may also be created by connecting piezoelectric elements along the x-direction. In embodiments, the piezoelectric elements in a line unit may be hardwired. - As discussed in conjunction with
FIG. 18A , each piezoelectric element 1806 may be electrically coupled to a circuit 1842, i.e., the number of piezoelectric elements in thetransceiver substrate 1802 is the same as the number of circuit 1842 in theASIC chip 1804. In such a case, the electrical connections of piezoelectric elements in each column (or row) may be performed electronically, i.e., the hardwire conductors (e.g. 2007) for connecting electrodes in a column (or row) is replaced by electronic switches. Stated differently, the piezoelectric elements in a line imager/unit may be electronically connected to each other. For an electronically controlled line imager, a line imager/unit may be built by connecting each piezoelectric element of a two dimensional matrix array to a corresponding control circuit (such as 1842) of a two dimensional array of control circuits, where the control circuits are located spatially close to pixels. To create a line element, a multiplicity of drivers controlling a column (or row) of pixels may be turned on electronically. In embodiments, the number of drivers in each line imager/unit can be electrically modified under program control and electronically adjustable, i.e., the line imager having the piezoelectric elements are electrically configurable. - In embodiments, smaller capacitance of each pixel may be driven efficiently by the distributed drive circuitry without other equalizing elements in between driver and pixel, eliminating the difficulty of driving a very large line capacitance. In embodiments, driver optimization may allow symmetry in rising edge and falling edges, allowing better linearity in transmit output, enabling harmonic imaging. (The symmetry is described in conjunction with
FIGS. 33 and 34 .) In embodiments, electronic control may allow programmable aperture size, transmit apodization, and horizontal or vertical steering control, all of which may improve image quality. In embodiments, the configurable line imager/unit under electronic control may be electrically modified under program control. For example, if a smaller number of connected elements is desired in the y-direction, the number may be adjusted by software control and without having to re-spin the control electronic circuitry or the piezoelectric array. - In embodiments, each line unit may be designed to consist of several sub units with separate control for each sub unit. The advantage of these sub units is that it may alleviate the difficulty of driving a large capacitive load for a line unit using one single external transmit driver. For example, if two line units are created in the place of one line unit that includes the entire piezoelectric elements in a column, two different transmit drivers (such as 2816) may be employed and each transmit driver may control half of the load of the full line unit. Also, even if one driver is used, driving the first half of the line unit and the second half of the line unit separately may improve the drive situation due to lower resistance connection to both ends of the line unit.
- In embodiments, both the length and orientation of the line units may be controlled. For instance, in
FIGS. 20-29 , the line units may be arranged in both x and y directions. By way of example, inFIG. 30 , the O electrodes along a column (e.g. 2003-11-2003-n 1) may be electrically coupled to form one line unit, and the O electrodes in the other columns may be electrically coupled to form n number of line units that extend along the x-direction. More specifically, the line units that extend along the x-direction include n number of O electrodes (2003-12-2003-1 n), . . . , (2003-n 2-2003-nn). In embodiments, the arrangement of line units along orthogonal directions may be possible by controlling the electrical circuits in ASIC chip. - In
FIGS. 20-30 , each piezoelectric element may include two or more top (X and T) electrodes. In embodiments, the piezoelectric layer under these top electrode may be poled in the same direction or opposite directions. The multiple poling direction when combined with an appropriate applied signal electric field may create improvements in transducer transmit and receive sensitivities and also create additional resonances to enable wider bandwidth. - In
FIGS. 20-30 , each array may have one or more membranes disposed under the piezoelectric elements. In embodiments, the membranes may have multiple modes of vibration. In embodiments, one membrane may vibrate in the fundamental mode at a certain frequency while another membrane may vibrate at a different frequency determined by membrane design and relative arrangements of electrodes with different poling directions. In embodiments, multiple membranes may be driven by same electrode set and each membrane may have different fundamental frequencies. In embodiments, each membrane may be responsive to a wide range of frequencies, increasing its bandwidth. Also, such a transducer with different poling directions may help increase transmit and receive sensitivities while also enabling a high bandwidth transducer. - In
FIGS. 22, 24, 25 , the X (or T) electrodes in a column may be electrically coupled to a conductor. In embodiments, these conductors may be electrically coupled to one common conductor. For instance, inFIG. 22 , the conductors 2008-1-2208-n may be electrically coupled to one common conductor line so that all of the T electrodes in thearray 2200 may be connected to the ground or a common DC bias voltage. - In
FIGS. 20-29 , each array may include piezoelectric elements that are arranged in a two dimensional array, where the number of elements in the x-direction may be the same as the number of elements in the y-direction. However, it should be apparent to those of ordinary skill in the art that the number of elements in the x-direction may be different from the number of elements in the y-direction. - In embodiments, the ASIC chip (such as 1804) coupled to the transducer substrate (such as 1802) may contain temperature sensors that measure the surface temperatures of the
imaging device 120 facing the human body during operation. In embodiments, the maximum allowable temperature may be regulated, and this regulation may limit the functionality of the imaging device since the temperatures should not rise beyond the allowable upper limit. In embodiments, this temperature information may be used to improve image quality. For example, if temperature is below the maximum allowed limit, additional power may be consumed in the amplifiers to lower its noise and improve system signal-to-noise ratio (SNR) for improved quality images. - In embodiments, the power consumed by the
imaging device 120 increases as the number of line units that are driven simultaneously increases. All line units in theimaging device 120 may need to be driven to complete transmitting pressure waves from the whole aperture. If only a few line units are driven to transmit pressure waves, wait and receive the reflected echo at a time, it will take more time to complete one cycle of driving the entire line units for the whole aperture, reducing the rate at which images can be taken per second (frame rate). In order to improve this rate, more line units need to be driven at a time. In embodiments, the information of the temperature may allow theimaging device 120 to drive more lines to improve the frame rate. - In
FIGS. 20-30 , each piezoelectric element may have one bottom electrode (O) and one or more top electrodes (X and T) and have more than one resonance frequency. For instance, eachpiezoelectric element 2502 inFIG. 25 may have one bottom electrode (O) and two top electrodes, where the first top electrode and the bottom electrode (O) may be responsive to a first frequency f1, while the second top electrode and the bottom electrode (O) may be responsive to a second frequency f2 that may be different from f1. - In embodiments, the electrical charge developed during the receive mode is transferred to an amplifier, such as 1811, 2810, 2814, 2910, 2914, 3010, 3016, 3128, and 3228. Then, the amplified signal may be further processed by various electrical components. As such, it should be apparent to those of ordinary skill in the art that the each of the
amplifiers -
FIG. 38 shows a schematic diagram of animaging assembly 3800 according to embodiments of the present disclosure. As depicted, theimaging assembly 3800 may include: atransceiver substrate 3801 having piezoelectric elements (not shown inFIG. 38 ); an ASIC chip 3802 electrically coupled to thetransceiver substrate 3801; areceiver multiplexer 3820 electrically coupled to the ASIC chip 3802; a receiver analogue-front-end (AFE) 3830; atransmitter multiplexer 3824 electrically coupled to the ASIC chip 3802; and a transmitbeamformer 3834 electrically coupled to thesecond multiplexer 3824. In embodiments, the ASIC chip 3802 may includemultiple circuits 3804 that are connected to and configured to drive multiple piezoelectric elements in thetransceiver substrate 3801. In embodiments, eachcircuit 3804 may include a receiver amplifier (or shortly amplifier) 3806, such as LNA, and a transmit driver 3808 for transmitting a signal to a piezoelectric element, and aswitch 3810 that toggles between the amplifier 3806 and the transmit driver 3808. The amplifiers may have programmable gain and means to connect them to piezo elements that need to be sensed. The transmit drivers have means to optimize their impedance and means to be connected to piezoelectric elements that are to be driven. - In embodiments, the
receiver multiplexer 3820 may include multiple switches 3822 and thereceiver AFE 3830 may includemultiple amplifiers 3832. In embodiments, each of the switches 3822 may electrically connect/disconnect acircuit 3804 to/from anamplifier 3832. In embodiments, thetransmitter multiplexer 3824 may include multiple switches 3826 and the transmitbeamformer 3834 may include multiple transmit driver 3836 and other circuitry not shown to control the relative delay between transmit driver waveform of the various drivers, and other circuitry not shown to control the frequency and the number of pulses for each of the transmit drivers. In embodiments, each of the switches 3826 turn on during a transmit operation and connect tocircuit 3804, while switches 3822 turn off, whileswitch 3810 connects to transmit driver 3808. Similarly, during a receive operation, switches 3826 turn off while switches 3822 turn on, whileswitch 3810 is connected to amplifier 3806. - In embodiments, the
switches 3810 may be toggled to the transmit drivers 3808 during the transmit mode and toggle to the amplifiers 3806 during the receive mode. In embodiments, a portion of the switches 3822 may be closed so that the correspondingcircuits 3804 may be set to the receive mode. Similarly, a portion of the switches 3826 may be closed so that the correspondingcircuits 3804 may be set to the transmit mode. Since a portion of the switches 3822 and a portion of the switches 3826 may be closed simultaneously, the imager assembly may be operated in both transmit and receive modes simultaneously. Also, thereceiver multiplexer 3820 and thetransmitter multiplexer 3824 reduce the number of ASIC pins. In embodiments, thereceiver multiplexer 3820,receiver AFE 3830,transmitter multiplexer 3824, andtransmitter beamformer 3834 may be included in thecircuits 215 inFIG. 2 . - In embodiments, each piezoelectric may have more than two electrodes, where one electrode may be in the transmit mode to generate pressure waves while the other electrode may be simultaneously in the receive mode to develop electrical charge. This simultaneous operation of transmit and receive modes may allow three dimensional imaging.
- While the invention is susceptible to various modifications and alternative forms, specific examples thereof have been shown in the drawings and are herein described in detail. It should be understood, however, that the invention is not to be limited to the particular forms disclosed, but to the contrary, the invention is to cover all modifications, equivalents, and alternatives falling within the scope of the appended claims.
Claims (35)
1. A transceiver, comprising:
an array of elements, wherein each element is formed on;
a substrate:
a membrane suspending from the substrate;
a bottom electrode disposed on the membrane;
a piezoelectric layer disposed on the bottom electrode; and
a first electrode disposed on the piezoelectric layer,
wherein each element exhibits a plurality of modes of vibration.
2. The transceiver of claim 1 , further comprising:
a circuit for generating a signal pulse that has rising and falling edges and the rising and falling edges are symmetrical to each other, with the high and low portions of the waveform substantially equal; and
a conductor electrically coupled to the circuit and the bottom electrode so that the signal pulse is transmitted to the bottom electrode through the conductor.
3. The transceiver of claim 2 , wherein a peak-to-peak amplitude of the signal pulse connected to one of the electrodes of each piezoelectric element is less than 11 V.
4. The transceiver of claim 3 , where the other one of the electrodes of each piezoelectric element is connected to a DC bias voltage.
5. The transceiver of claim 4 , wherein the signal pulse includes at least one of a unipolar signal transitioning between two levels and a three level signal, wherein the signal pulse is the output of transmit drivers connected to the pixel array.
6. The transceiver of claim 5 , wherein a transmit drive waveform is a coded signal and includes one of a chirp and Golay code.
7. The transceiver of claim 6 , wherein the transceiver uses a coded signal for transmitting an ultrasound signal towards an organ being imaged and the received signal is processed with matched filters.
8. The transceiver of claim 6 , wherein for imaging of organs deep inside a tissue, the transceiver allows more energy to be coupled into the tissue without degrading axial resolution.
9. The transceiver of claim 1 , wherein the piezoelectric layer includes at least one of PZT, KNN, PZT-N, PMT-Pt, AIN, Sc-AIN, ZnO, PVDF and LiNiO3.
10. The transceiver of claim 1 , wherein the bottom electrode is electrically connected to a signal conductor made of metal and the metal is deposited on a TiO2 layer deposited on the substrate.
11. The transceiver of claim 1 , wherein a thickness of the piezoelectric layer is 2 μm or less.
12. The transceiver of claim 1 , wherein a piezoelectric element comprises a common bottom electrode and two top electrodes, a first conductor connecting all bottom electrodes of the piezo array, a column of piezo elements with first top plates connected with a second conductor and connecting to a receive amplifier, wherein the second top electrode of all piezoelectric elements in a same column are connected using a third conductor, wherein the third conductor connects to a switch that connects the second top electrode of a column to a transmit driver in transmit mode and a receive amplifier in receive mode, wherein the imaging device has one or more columns.
13. The transceiver of claim 12 , wherein a sub piezoelectric element comprising bottom and first top electrodes is polarized in the opposite direction of sub piezoelectric element consisting of the bottom electrode and the second top electrode.
14. The transceiver of claim 12 , wherein the at least one circuit is configured to send a transmit signal to the second top electrode of a piezoelectric element and, at the same time, receive a signal from the first top electrode of the piezoelectric element.
15. The transceiver of claim 12 , wherein the device is configured to perform one of continuous Doppler imaging and B mode imaging.
16. The transceiver of claim 1 , wherein lower power operation is achieved by using lower AC drive voltages in transmit mode, wherein lower transmit voltages are less than 11V AC.
17. The transceiver of claim 1 , wherein for a given electric field across the piezoelectric layer, a thickness of piezoelectric layer is made thinner to operate with lower voltages across the top and bottom electrodes, wherein the piezoelectric layer thickness is 2 μm or smaller.
18. The transceiver of claim 1 , wherein the transceiver operates in a flexural mode of operation and the elements undergo a flexural mode resonance, causing a flex tensional motion of the membrane to transmit acoustic signals, wherein a received pressure signal from an object being imaged is converted to electrical charge by a flexural mode resonance of an element.
19. An imaging device, comprising:
a transceiver substrate including:
a substrate;
at least one membrane disposed on the substrate; and
a plurality of piezoelectric elements disposed on the at least one membrane, each of the plurality of piezoelectric elements including;
a bottom electrode;
a piezoelectric layer disposed on the bottom electrode;
first top electrodes disposed on the piezoelectric layer, where each element exhibits one of more modes of vibration and
an ASIC chip electrically coupled to the transceiver substrate by a three dimensional interconnection mechanism and including:
at least one circuit for controlling one or more of the plurality of piezoelectric elements; and
a control unit electrically coupled to the at least one circuit and controlling the at least one circuit.
20. The imaging device of claim 19 , wherein the bottom electrode is a signal electrode and wherein the first top electrode is connected to one of a ground or a DC bias, wherein all top electrodes in the plurality of piezoelectric elements are connected together using conductors.
21. The imaging device of claim 19 , wherein the at least one circuit includes:
a transmit driver for sending a transmit signal to the bottom electrode; and
an amplifier for receiving a receive signal from the bottom electrode and amplifying the receive signal.
22. The imaging device of claim 21 , wherein the at least one circuit includes:
a switch having a first terminal electrically coupled to the bottom electrode and a second terminal toggling between two conductors that are coupled to the transmit driver and the amplifier.
23. The imaging device of claim 22 , wherein the second terminal of the switch toggles to the conductor coupled to the amplifier during a receive mode so that an electrical charge developed on the bottom electrode is transferred to the amplifier.
24. The imaging device of claim 19 , wherein the transmit signal is a pulse wave modulated (PWM) signal.
25. The imaging device of claim 24 , wherein the plurality of piezoelectric elements are further arranged into columns, wherein a width of the PWM signal used to drive different columns of piezoelectric elements is adjusted to implement a transmit apodization.
26. The imaging device of claim 24 , wherein the transmit signal uses a PWM signal width to modulated power transmitted from the transducer.
27. The imaging device of claim 19 , wherein the transmit signal has two or more levels and a number of the levels is used to modulate a power of the transmitted ultrasound signal from the transducer.
28. The imaging device of claim 19 , wherein the at least one membrane is preconfigured to boost membrane pressure output.
29. The imaging device of claim 19 , wherein the imaging device is an ultrasonic medical probe.
30. The imaging device of claim 19 , further comprising a rechargeable battery.
31. The imaging device of claim 19 , wherein the plurality of piezoelectric elements are arranged in an array and wherein a piezoelectric element comprising a common bottom electrode and two top electrodes, a first conductor connecting all bottom electrodes of the array, a row of piezoelectric elements with first top plates connected with a second conductor and connecting to a receive amplifier, wherein the second top electrode of all piezoelectric elements in a same column are connected using a third conductor, wherein the third conductor connects to a switch that connects the second top electrode of a column to transmit driver in transmit mode and a receive amplifier in receive mode, wherein the imaging device has one or more columns and one or more rows of piezoelectric elements in the array.
32. The imaging device of claim 31 , wherein the imaging device is used to perform biplane imaging.
33. The imaging device of claim 31 , wherein variable weighting is applied to each column of the array and is used to modulated output power levels, wherein Doppler and B Mode imaging share a same power supply.
34. The imaging device of claim 33 , wherein the variable weighting is achieved using PWM signaling.
35. The imaging device of claim 34 , wherein the variable weighting is achieved by electronically changing a height of a column.
Priority Applications (1)
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US17/318,416 US20210275143A1 (en) | 2016-12-04 | 2021-05-12 | Low voltage, low power mems transducer with direct interconnect capability |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662429832P | 2016-12-04 | 2016-12-04 | |
US201662429833P | 2016-12-04 | 2016-12-04 | |
US201662433782P | 2016-12-13 | 2016-12-13 | |
US15/826,614 US11058396B2 (en) | 2016-12-04 | 2017-11-29 | Low voltage, low power MEMS transducer with direct interconnect capability |
US17/318,416 US20210275143A1 (en) | 2016-12-04 | 2021-05-12 | Low voltage, low power mems transducer with direct interconnect capability |
Related Parent Applications (1)
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US15/826,614 Division US11058396B2 (en) | 2016-12-04 | 2017-11-29 | Low voltage, low power MEMS transducer with direct interconnect capability |
Publications (1)
Publication Number | Publication Date |
---|---|
US20210275143A1 true US20210275143A1 (en) | 2021-09-09 |
Family
ID=62240217
Family Applications (10)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/820,319 Active 2039-05-23 US11039814B2 (en) | 2016-12-04 | 2017-11-21 | Imaging devices having piezoelectric transducers |
US15/826,606 Active 2038-11-07 US10835209B2 (en) | 2016-12-04 | 2017-11-29 | Configurable ultrasonic imager |
US15/826,614 Active 2039-08-02 US11058396B2 (en) | 2016-12-04 | 2017-11-29 | Low voltage, low power MEMS transducer with direct interconnect capability |
US17/067,139 Active 2038-08-29 US11712222B2 (en) | 2016-12-04 | 2020-10-09 | Configurable ultrasonic imager |
US17/067,119 Active 2038-10-05 US11759175B2 (en) | 2016-12-04 | 2020-10-09 | Configurable ultrasonic imager |
US17/237,723 Active 2038-10-23 US11986350B2 (en) | 2016-12-04 | 2021-04-22 | Imaging devices having piezoelectric transducers |
US17/318,416 Pending US20210275143A1 (en) | 2016-12-04 | 2021-05-12 | Low voltage, low power mems transducer with direct interconnect capability |
US18/222,364 Pending US20230355210A1 (en) | 2016-12-04 | 2023-07-14 | Configurable ultrasonic imager |
US18/369,832 Pending US20240000429A1 (en) | 2016-12-04 | 2023-09-18 | Configurable ultrasonic imager |
US18/668,668 Pending US20240307035A1 (en) | 2016-12-04 | 2024-05-20 | Imaging devices having piezoelectric transducers |
Family Applications Before (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/820,319 Active 2039-05-23 US11039814B2 (en) | 2016-12-04 | 2017-11-21 | Imaging devices having piezoelectric transducers |
US15/826,606 Active 2038-11-07 US10835209B2 (en) | 2016-12-04 | 2017-11-29 | Configurable ultrasonic imager |
US15/826,614 Active 2039-08-02 US11058396B2 (en) | 2016-12-04 | 2017-11-29 | Low voltage, low power MEMS transducer with direct interconnect capability |
US17/067,139 Active 2038-08-29 US11712222B2 (en) | 2016-12-04 | 2020-10-09 | Configurable ultrasonic imager |
US17/067,119 Active 2038-10-05 US11759175B2 (en) | 2016-12-04 | 2020-10-09 | Configurable ultrasonic imager |
US17/237,723 Active 2038-10-23 US11986350B2 (en) | 2016-12-04 | 2021-04-22 | Imaging devices having piezoelectric transducers |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US18/222,364 Pending US20230355210A1 (en) | 2016-12-04 | 2023-07-14 | Configurable ultrasonic imager |
US18/369,832 Pending US20240000429A1 (en) | 2016-12-04 | 2023-09-18 | Configurable ultrasonic imager |
US18/668,668 Pending US20240307035A1 (en) | 2016-12-04 | 2024-05-20 | Imaging devices having piezoelectric transducers |
Country Status (6)
Country | Link |
---|---|
US (10) | US11039814B2 (en) |
EP (6) | EP3547921B1 (en) |
JP (9) | JP7108625B2 (en) |
CN (5) | CN115251979A (en) |
PL (1) | PL3547921T3 (en) |
WO (3) | WO2018102223A1 (en) |
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