JP6975541B2 - 複合体、およびトランジスタ - Google Patents

複合体、およびトランジスタ Download PDF

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Publication number
JP6975541B2
JP6975541B2 JP2017044532A JP2017044532A JP6975541B2 JP 6975541 B2 JP6975541 B2 JP 6975541B2 JP 2017044532 A JP2017044532 A JP 2017044532A JP 2017044532 A JP2017044532 A JP 2017044532A JP 6975541 B2 JP6975541 B2 JP 6975541B2
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insulator
transistor
oxide
conductor
region
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Japanese (ja)
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JP2017168836A (ja
JP2017168836A5 (cg-RX-API-DMAC7.html
Inventor
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2017168836A publication Critical patent/JP2017168836A/ja
Publication of JP2017168836A5 publication Critical patent/JP2017168836A5/ja
Priority to JP2021181631A priority Critical patent/JP7258108B2/ja
Application granted granted Critical
Publication of JP6975541B2 publication Critical patent/JP6975541B2/ja
Priority to JP2023060760A priority patent/JP7505079B2/ja
Priority to JP2024094973A priority patent/JP7699697B2/ja
Priority to JP2025101036A priority patent/JP2025123395A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H01L2223/5446—Located in scribe lines
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Manufacturing & Machinery (AREA)
JP2017044532A 2016-03-11 2017-03-09 複合体、およびトランジスタ Active JP6975541B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2021181631A JP7258108B2 (ja) 2016-03-11 2021-11-08 複合酸化物半導体
JP2023060760A JP7505079B2 (ja) 2016-03-11 2023-04-04 トランジスタ
JP2024094973A JP7699697B2 (ja) 2016-03-11 2024-06-12 トランジスタ
JP2025101036A JP2025123395A (ja) 2016-03-11 2025-06-17 酸化物半導体膜

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016048802 2016-03-11
JP2016048802 2016-03-11

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2019087070A Division JP6817366B2 (ja) 2016-03-11 2019-04-30 トランジスタ
JP2021181631A Division JP7258108B2 (ja) 2016-03-11 2021-11-08 複合酸化物半導体

Publications (3)

Publication Number Publication Date
JP2017168836A JP2017168836A (ja) 2017-09-21
JP2017168836A5 JP2017168836A5 (cg-RX-API-DMAC7.html) 2020-04-23
JP6975541B2 true JP6975541B2 (ja) 2021-12-01

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Family Applications (6)

Application Number Title Priority Date Filing Date
JP2017044532A Active JP6975541B2 (ja) 2016-03-11 2017-03-09 複合体、およびトランジスタ
JP2019087070A Active JP6817366B2 (ja) 2016-03-11 2019-04-30 トランジスタ
JP2021181631A Active JP7258108B2 (ja) 2016-03-11 2021-11-08 複合酸化物半導体
JP2023060760A Active JP7505079B2 (ja) 2016-03-11 2023-04-04 トランジスタ
JP2024094973A Active JP7699697B2 (ja) 2016-03-11 2024-06-12 トランジスタ
JP2025101036A Pending JP2025123395A (ja) 2016-03-11 2025-06-17 酸化物半導体膜

Family Applications After (5)

Application Number Title Priority Date Filing Date
JP2019087070A Active JP6817366B2 (ja) 2016-03-11 2019-04-30 トランジスタ
JP2021181631A Active JP7258108B2 (ja) 2016-03-11 2021-11-08 複合酸化物半導体
JP2023060760A Active JP7505079B2 (ja) 2016-03-11 2023-04-04 トランジスタ
JP2024094973A Active JP7699697B2 (ja) 2016-03-11 2024-06-12 トランジスタ
JP2025101036A Pending JP2025123395A (ja) 2016-03-11 2025-06-17 酸化物半導体膜

Country Status (6)

Country Link
US (5) US10516060B2 (cg-RX-API-DMAC7.html)
JP (6) JP6975541B2 (cg-RX-API-DMAC7.html)
KR (4) KR102513161B1 (cg-RX-API-DMAC7.html)
CN (2) CN108780819B (cg-RX-API-DMAC7.html)
TW (3) TWI886086B (cg-RX-API-DMAC7.html)
WO (1) WO2017153862A1 (cg-RX-API-DMAC7.html)

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Publication number Publication date
JP2019149568A (ja) 2019-09-05
US20230033787A1 (en) 2023-02-02
CN108780819B (zh) 2022-06-14
WO2017153862A1 (en) 2017-09-14
JP7505079B2 (ja) 2024-06-24
JP7258108B2 (ja) 2023-04-14
KR20180123501A (ko) 2018-11-16
JP2017168836A (ja) 2017-09-21
JP7699697B2 (ja) 2025-06-27
CN115148824B (zh) 2025-10-03
KR20220017533A (ko) 2022-02-11
TW201739049A (zh) 2017-11-01
US20170263773A1 (en) 2017-09-14
US20200091346A1 (en) 2020-03-19
US11417771B2 (en) 2022-08-16
US10516060B2 (en) 2019-12-24
KR20230043237A (ko) 2023-03-30
KR102721654B1 (ko) 2024-10-23
KR102513161B1 (ko) 2023-03-22
US12283633B2 (en) 2025-04-22
JP6817366B2 (ja) 2021-01-20
KR102358289B1 (ko) 2022-02-03
US11869980B2 (en) 2024-01-09
JP2024107358A (ja) 2024-08-08
TWI829620B (zh) 2024-01-21
JP2023080161A (ja) 2023-06-08
CN115148824A (zh) 2022-10-04
KR102865888B1 (ko) 2025-09-26
JP2025123395A (ja) 2025-08-22
CN108780819A (zh) 2018-11-09
KR20240156430A (ko) 2024-10-29
TWI886086B (zh) 2025-06-01
TW202517055A (zh) 2025-04-16
JP2022010133A (ja) 2022-01-14
TW202418587A (zh) 2024-05-01
US20250169114A1 (en) 2025-05-22
US20240113231A1 (en) 2024-04-04

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