TWI886086B - 複合體及電晶體 - Google Patents
複合體及電晶體 Download PDFInfo
- Publication number
- TWI886086B TWI886086B TW113150910A TW113150910A TWI886086B TW I886086 B TWI886086 B TW I886086B TW 113150910 A TW113150910 A TW 113150910A TW 113150910 A TW113150910 A TW 113150910A TW I886086 B TWI886086 B TW I886086B
- Authority
- TW
- Taiwan
- Prior art keywords
- transistor
- insulator
- oxide
- conductor
- region
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
- H01L2223/5446—Located in scribe lines
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Electroluminescent Light Sources (AREA)
- Manufacturing & Machinery (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-048802 | 2016-03-11 | ||
| JP2016048802 | 2016-03-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202517055A TW202517055A (zh) | 2025-04-16 |
| TWI886086B true TWI886086B (zh) | 2025-06-01 |
Family
ID=59787167
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW113150910A TWI886086B (zh) | 2016-03-11 | 2017-03-09 | 複合體及電晶體 |
| TW106107851A TWI829620B (zh) | 2016-03-11 | 2017-03-09 | 複合體及電晶體 |
| TW112150433A TW202418587A (zh) | 2016-03-11 | 2017-03-09 | 複合體及電晶體 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106107851A TWI829620B (zh) | 2016-03-11 | 2017-03-09 | 複合體及電晶體 |
| TW112150433A TW202418587A (zh) | 2016-03-11 | 2017-03-09 | 複合體及電晶體 |
Country Status (6)
| Country | Link |
|---|---|
| US (5) | US10516060B2 (cg-RX-API-DMAC7.html) |
| JP (6) | JP6975541B2 (cg-RX-API-DMAC7.html) |
| KR (4) | KR102513161B1 (cg-RX-API-DMAC7.html) |
| CN (2) | CN108780819B (cg-RX-API-DMAC7.html) |
| TW (3) | TWI886086B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2017153862A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014027263A (ja) * | 2012-06-15 | 2014-02-06 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| WO2017149428A1 (en) | 2016-03-04 | 2017-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and display device including the semiconductor device |
| KR102513161B1 (ko) * | 2016-03-11 | 2023-03-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 복합체 및 트랜지스터 |
| WO2017168283A1 (ja) | 2016-04-01 | 2017-10-05 | 株式会社半導体エネルギー研究所 | 複合酸化物半導体、当該複合酸化物半導体を用いた半導体装置、当該半導体装置を有する表示装置 |
| US10388738B2 (en) | 2016-04-01 | 2019-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Composite oxide semiconductor and method for manufacturing the same |
| WO2017212363A1 (en) | 2016-06-06 | 2017-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering apparatus, sputtering target, and method for forming semiconductor film with the sputtering apparatus |
| DE112017004584T5 (de) | 2016-09-12 | 2019-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Anzeigevorrichtung und elektronisches Gerät |
| US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
| DE112018001296B4 (de) | 2017-03-13 | 2024-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Verbundoxid und Transistor |
| US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
| US10388533B2 (en) | 2017-06-16 | 2019-08-20 | Applied Materials, Inc. | Process integration method to tune resistivity of nickel silicide |
| KR102405723B1 (ko) | 2017-08-18 | 2022-06-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 및 고온 어닐링 챔버 |
| US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
| JP7112490B2 (ja) | 2017-11-11 | 2022-08-03 | マイクロマテリアルズ エルエルシー | 高圧処理チャンバのためのガス供給システム |
| JP2021503714A (ja) | 2017-11-17 | 2021-02-12 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 高圧処理システムのためのコンデンサシステム |
| CN111512549B (zh) * | 2017-12-28 | 2023-10-17 | 日本碍子株式会社 | 压电性材料基板与支撑基板的接合体及其制造方法 |
| EP3762962A4 (en) | 2018-03-09 | 2021-12-08 | Applied Materials, Inc. | HIGH PRESSURE ANNEALING PROCESS FOR METAL-BASED MATERIALS |
| US10916433B2 (en) | 2018-04-06 | 2021-02-09 | Applied Materials, Inc. | Methods of forming metal silicide layers and metal silicide layers formed therefrom |
| US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
| US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
| CN110875257B (zh) * | 2018-09-03 | 2021-09-28 | 联华电子股份有限公司 | 射频装置以及其制作方法 |
| US11881522B2 (en) * | 2018-10-05 | 2024-01-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
| WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
| US11211461B2 (en) * | 2018-12-28 | 2021-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and memory device |
| WO2020157558A1 (ja) | 2019-01-29 | 2020-08-06 | 株式会社半導体エネルギー研究所 | 記憶装置、半導体装置、および、電子機器 |
| US12349412B2 (en) * | 2019-04-29 | 2025-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US11205589B2 (en) * | 2019-10-06 | 2021-12-21 | Applied Materials, Inc. | Methods and apparatuses for forming interconnection structures |
| JP7461129B2 (ja) * | 2019-10-17 | 2024-04-03 | 株式会社ジャパンディスプレイ | 半導体装置及び半導体装置の製造方法 |
| US12005391B2 (en) | 2019-12-11 | 2024-06-11 | Brookhaven Science Associates, Llc | Method for trapping noble gas atoms and molecules in oxide nanocages |
| US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
| US20230124169A1 (en) * | 2020-03-05 | 2023-04-20 | Sony Semiconductor Solutions Corporation | Solid-state imaging device and electronic device |
| US20230307550A1 (en) * | 2020-08-27 | 2023-09-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140084287A1 (en) * | 2012-09-24 | 2014-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US20150103977A1 (en) * | 2012-06-20 | 2015-04-16 | Fujifilm Corporation | Method of producing thin film transistor, thin film transistor, display device, image sensor, and x-ray sensor |
| TW201538432A (zh) * | 2014-03-14 | 2015-10-16 | Sumitomo Metal Mining Co | 氧化物燒結體、濺鍍用靶及使用其而得之氧化物半導體薄膜 |
| US20150349127A1 (en) * | 2014-05-30 | 2015-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and electronic device |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5078246B2 (ja) | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| JP5504008B2 (ja) * | 2009-03-06 | 2014-05-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR101097322B1 (ko) | 2009-12-15 | 2011-12-23 | 삼성모바일디스플레이주식회사 | 산화물 반도체 박막 트랜지스터, 그 제조방법 및 산화물 반도체 박막 트랜지스터를 구비한 유기전계 발광소자 |
| JP6013676B2 (ja) * | 2011-11-11 | 2016-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
| WO2013081128A1 (ja) * | 2011-12-02 | 2013-06-06 | 株式会社神戸製鋼所 | 薄膜トランジスタの半導体層用酸化物薄膜、薄膜トランジスタおよび表示装置 |
| US9786793B2 (en) | 2012-03-29 | 2017-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide semiconductor layer including regions with different concentrations of resistance-reducing elements |
| US20130341180A1 (en) | 2012-06-22 | 2013-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target and method for using the same |
| KR102161077B1 (ko) | 2012-06-29 | 2020-09-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| EP2880690B1 (en) * | 2012-08-03 | 2019-02-27 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device with oxide semiconductor stacked film |
| WO2014061762A1 (en) * | 2012-10-17 | 2014-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
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| JP6352194B2 (ja) | 2013-01-16 | 2018-07-04 | 出光興産株式会社 | スパッタリングターゲット、酸化物半導体薄膜及び当該酸化物半導体薄膜を備える薄膜トランジスタ |
| JP2015188062A (ja) | 2014-02-07 | 2015-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6629509B2 (ja) | 2014-02-21 | 2020-01-15 | 株式会社半導体エネルギー研究所 | 酸化物半導体膜 |
| WO2015132697A1 (en) | 2014-03-07 | 2015-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US20150255029A1 (en) * | 2014-03-07 | 2015-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device, display module including the display device, and electronic device including the display device or the display module |
| KR20150126272A (ko) * | 2014-05-02 | 2015-11-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물의 제작 방법 |
| US20150318171A1 (en) | 2014-05-02 | 2015-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing oxide |
| TWI772799B (zh) | 2014-05-09 | 2022-08-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| TWI672804B (zh) * | 2014-05-23 | 2019-09-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| US9461179B2 (en) * | 2014-07-11 | 2016-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor device (TFT) comprising stacked oxide semiconductor layers and having a surrounded channel structure |
| US10684500B2 (en) | 2015-05-27 | 2020-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Touch panel |
| US10139663B2 (en) | 2015-05-29 | 2018-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Input/output device and electronic device |
| KR20160144314A (ko) | 2015-06-08 | 2016-12-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치 및 그 동작 방법, 및 전자 기기 |
| JP2017003976A (ja) | 2015-06-15 | 2017-01-05 | 株式会社半導体エネルギー研究所 | 表示装置 |
| KR102556718B1 (ko) | 2015-06-19 | 2023-07-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 그 제작 방법, 및 전자 기기 |
| US9860465B2 (en) | 2015-06-23 | 2018-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
| JP5968508B2 (ja) | 2015-07-17 | 2016-08-10 | 株式会社日立製作所 | 不揮発半導体記憶システム |
| WO2017153882A1 (en) | 2016-03-11 | 2017-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and display device including the semiconductor device |
| KR102513161B1 (ko) * | 2016-03-11 | 2023-03-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 복합체 및 트랜지스터 |
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2017
- 2017-02-27 KR KR1020227003004A patent/KR102513161B1/ko active Active
- 2017-02-27 US US15/443,052 patent/US10516060B2/en active Active
- 2017-02-27 KR KR1020247035037A patent/KR102865888B1/ko active Active
- 2017-02-27 KR KR1020237009473A patent/KR102721654B1/ko active Active
- 2017-02-27 WO PCT/IB2017/051114 patent/WO2017153862A1/en not_active Ceased
- 2017-02-27 KR KR1020187026989A patent/KR102358289B1/ko active Active
- 2017-02-27 CN CN201780016678.0A patent/CN108780819B/zh active Active
- 2017-02-27 CN CN202210549677.5A patent/CN115148824B/zh active Active
- 2017-03-09 TW TW113150910A patent/TWI886086B/zh active
- 2017-03-09 TW TW106107851A patent/TWI829620B/zh active
- 2017-03-09 TW TW112150433A patent/TW202418587A/zh unknown
- 2017-03-09 JP JP2017044532A patent/JP6975541B2/ja active Active
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2019
- 2019-04-30 JP JP2019087070A patent/JP6817366B2/ja active Active
- 2019-11-21 US US16/690,755 patent/US11417771B2/en active Active
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2021
- 2021-11-08 JP JP2021181631A patent/JP7258108B2/ja active Active
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2022
- 2022-08-10 US US17/884,717 patent/US11869980B2/en active Active
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2023
- 2023-04-04 JP JP2023060760A patent/JP7505079B2/ja active Active
- 2023-12-15 US US18/540,987 patent/US12283633B2/en active Active
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2024
- 2024-06-12 JP JP2024094973A patent/JP7699697B2/ja active Active
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2025
- 2025-01-16 US US19/023,954 patent/US20250169114A1/en active Pending
- 2025-06-17 JP JP2025101036A patent/JP2025123395A/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150103977A1 (en) * | 2012-06-20 | 2015-04-16 | Fujifilm Corporation | Method of producing thin film transistor, thin film transistor, display device, image sensor, and x-ray sensor |
| US20140084287A1 (en) * | 2012-09-24 | 2014-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TW201538432A (zh) * | 2014-03-14 | 2015-10-16 | Sumitomo Metal Mining Co | 氧化物燒結體、濺鍍用靶及使用其而得之氧化物半導體薄膜 |
| US20150349127A1 (en) * | 2014-05-30 | 2015-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and electronic device |
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