JP2017168836A5 - - Google Patents
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- JP2017168836A5 JP2017168836A5 JP2017044532A JP2017044532A JP2017168836A5 JP 2017168836 A5 JP2017168836 A5 JP 2017168836A5 JP 2017044532 A JP2017044532 A JP 2017044532A JP 2017044532 A JP2017044532 A JP 2017044532A JP 2017168836 A5 JP2017168836 A5 JP 2017168836A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- indium
- oxide semiconductor
- elemental
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 14
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 9
- 239000011701 zinc Substances 0.000 claims 8
- 239000000203 mixture Substances 0.000 claims 6
- 230000008878 coupling Effects 0.000 claims 4
- 238000010168 coupling process Methods 0.000 claims 4
- 238000005859 coupling reaction Methods 0.000 claims 4
- 239000013078 crystal Substances 0.000 claims 4
- 229910052738 indium Inorganic materials 0.000 claims 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 2
- 239000002131 composite material Substances 0.000 claims 2
- 229910052725 zinc Inorganic materials 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021181631A JP7258108B2 (ja) | 2016-03-11 | 2021-11-08 | 複合酸化物半導体 |
| JP2023060760A JP7505079B2 (ja) | 2016-03-11 | 2023-04-04 | トランジスタ |
| JP2024094973A JP7699697B2 (ja) | 2016-03-11 | 2024-06-12 | トランジスタ |
| JP2025101036A JP2025123395A (ja) | 2016-03-11 | 2025-06-17 | 酸化物半導体膜 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016048802 | 2016-03-11 | ||
| JP2016048802 | 2016-03-11 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019087070A Division JP6817366B2 (ja) | 2016-03-11 | 2019-04-30 | トランジスタ |
| JP2021181631A Division JP7258108B2 (ja) | 2016-03-11 | 2021-11-08 | 複合酸化物半導体 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017168836A JP2017168836A (ja) | 2017-09-21 |
| JP2017168836A5 true JP2017168836A5 (cg-RX-API-DMAC7.html) | 2020-04-23 |
| JP6975541B2 JP6975541B2 (ja) | 2021-12-01 |
Family
ID=59787167
Family Applications (6)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017044532A Active JP6975541B2 (ja) | 2016-03-11 | 2017-03-09 | 複合体、およびトランジスタ |
| JP2019087070A Active JP6817366B2 (ja) | 2016-03-11 | 2019-04-30 | トランジスタ |
| JP2021181631A Active JP7258108B2 (ja) | 2016-03-11 | 2021-11-08 | 複合酸化物半導体 |
| JP2023060760A Active JP7505079B2 (ja) | 2016-03-11 | 2023-04-04 | トランジスタ |
| JP2024094973A Active JP7699697B2 (ja) | 2016-03-11 | 2024-06-12 | トランジスタ |
| JP2025101036A Pending JP2025123395A (ja) | 2016-03-11 | 2025-06-17 | 酸化物半導体膜 |
Family Applications After (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019087070A Active JP6817366B2 (ja) | 2016-03-11 | 2019-04-30 | トランジスタ |
| JP2021181631A Active JP7258108B2 (ja) | 2016-03-11 | 2021-11-08 | 複合酸化物半導体 |
| JP2023060760A Active JP7505079B2 (ja) | 2016-03-11 | 2023-04-04 | トランジスタ |
| JP2024094973A Active JP7699697B2 (ja) | 2016-03-11 | 2024-06-12 | トランジスタ |
| JP2025101036A Pending JP2025123395A (ja) | 2016-03-11 | 2025-06-17 | 酸化物半導体膜 |
Country Status (6)
| Country | Link |
|---|---|
| US (5) | US10516060B2 (cg-RX-API-DMAC7.html) |
| JP (6) | JP6975541B2 (cg-RX-API-DMAC7.html) |
| KR (4) | KR102513161B1 (cg-RX-API-DMAC7.html) |
| CN (2) | CN108780819B (cg-RX-API-DMAC7.html) |
| TW (3) | TWI886086B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2017153862A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014027263A (ja) * | 2012-06-15 | 2014-02-06 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| WO2017149428A1 (en) | 2016-03-04 | 2017-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and display device including the semiconductor device |
| KR102513161B1 (ko) * | 2016-03-11 | 2023-03-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 복합체 및 트랜지스터 |
| WO2017168283A1 (ja) | 2016-04-01 | 2017-10-05 | 株式会社半導体エネルギー研究所 | 複合酸化物半導体、当該複合酸化物半導体を用いた半導体装置、当該半導体装置を有する表示装置 |
| US10388738B2 (en) | 2016-04-01 | 2019-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Composite oxide semiconductor and method for manufacturing the same |
| WO2017212363A1 (en) | 2016-06-06 | 2017-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering apparatus, sputtering target, and method for forming semiconductor film with the sputtering apparatus |
| DE112017004584T5 (de) | 2016-09-12 | 2019-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Anzeigevorrichtung und elektronisches Gerät |
| US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
| DE112018001296B4 (de) | 2017-03-13 | 2024-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Verbundoxid und Transistor |
| US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
| US10388533B2 (en) | 2017-06-16 | 2019-08-20 | Applied Materials, Inc. | Process integration method to tune resistivity of nickel silicide |
| KR102405723B1 (ko) | 2017-08-18 | 2022-06-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 및 고온 어닐링 챔버 |
| US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
| JP7112490B2 (ja) | 2017-11-11 | 2022-08-03 | マイクロマテリアルズ エルエルシー | 高圧処理チャンバのためのガス供給システム |
| JP2021503714A (ja) | 2017-11-17 | 2021-02-12 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 高圧処理システムのためのコンデンサシステム |
| CN111512549B (zh) * | 2017-12-28 | 2023-10-17 | 日本碍子株式会社 | 压电性材料基板与支撑基板的接合体及其制造方法 |
| EP3762962A4 (en) | 2018-03-09 | 2021-12-08 | Applied Materials, Inc. | HIGH PRESSURE ANNEALING PROCESS FOR METAL-BASED MATERIALS |
| US10916433B2 (en) | 2018-04-06 | 2021-02-09 | Applied Materials, Inc. | Methods of forming metal silicide layers and metal silicide layers formed therefrom |
| US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
| US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
| CN110875257B (zh) * | 2018-09-03 | 2021-09-28 | 联华电子股份有限公司 | 射频装置以及其制作方法 |
| US11881522B2 (en) * | 2018-10-05 | 2024-01-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
| WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
| US11211461B2 (en) * | 2018-12-28 | 2021-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and memory device |
| WO2020157558A1 (ja) | 2019-01-29 | 2020-08-06 | 株式会社半導体エネルギー研究所 | 記憶装置、半導体装置、および、電子機器 |
| US12349412B2 (en) * | 2019-04-29 | 2025-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US11205589B2 (en) * | 2019-10-06 | 2021-12-21 | Applied Materials, Inc. | Methods and apparatuses for forming interconnection structures |
| JP7461129B2 (ja) * | 2019-10-17 | 2024-04-03 | 株式会社ジャパンディスプレイ | 半導体装置及び半導体装置の製造方法 |
| US12005391B2 (en) | 2019-12-11 | 2024-06-11 | Brookhaven Science Associates, Llc | Method for trapping noble gas atoms and molecules in oxide nanocages |
| US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
| US20230124169A1 (en) * | 2020-03-05 | 2023-04-20 | Sony Semiconductor Solutions Corporation | Solid-state imaging device and electronic device |
| US20230307550A1 (en) * | 2020-08-27 | 2023-09-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5078246B2 (ja) | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| JP5504008B2 (ja) * | 2009-03-06 | 2014-05-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR101097322B1 (ko) | 2009-12-15 | 2011-12-23 | 삼성모바일디스플레이주식회사 | 산화물 반도체 박막 트랜지스터, 그 제조방법 및 산화물 반도체 박막 트랜지스터를 구비한 유기전계 발광소자 |
| JP6013676B2 (ja) * | 2011-11-11 | 2016-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
| WO2013081128A1 (ja) * | 2011-12-02 | 2013-06-06 | 株式会社神戸製鋼所 | 薄膜トランジスタの半導体層用酸化物薄膜、薄膜トランジスタおよび表示装置 |
| US9786793B2 (en) | 2012-03-29 | 2017-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide semiconductor layer including regions with different concentrations of resistance-reducing elements |
| JP5972065B2 (ja) * | 2012-06-20 | 2016-08-17 | 富士フイルム株式会社 | 薄膜トランジスタの製造方法 |
| US20130341180A1 (en) | 2012-06-22 | 2013-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target and method for using the same |
| KR102161077B1 (ko) | 2012-06-29 | 2020-09-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| EP2880690B1 (en) * | 2012-08-03 | 2019-02-27 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device with oxide semiconductor stacked film |
| TWI709244B (zh) * | 2012-09-24 | 2020-11-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| WO2014061762A1 (en) * | 2012-10-17 | 2014-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| WO2014065343A1 (en) | 2012-10-24 | 2014-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6352194B2 (ja) | 2013-01-16 | 2018-07-04 | 出光興産株式会社 | スパッタリングターゲット、酸化物半導体薄膜及び当該酸化物半導体薄膜を備える薄膜トランジスタ |
| JP2015188062A (ja) | 2014-02-07 | 2015-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6629509B2 (ja) | 2014-02-21 | 2020-01-15 | 株式会社半導体エネルギー研究所 | 酸化物半導体膜 |
| WO2015132697A1 (en) | 2014-03-07 | 2015-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US20150255029A1 (en) * | 2014-03-07 | 2015-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device, display module including the display device, and electronic device including the display device or the display module |
| WO2015137275A1 (ja) | 2014-03-14 | 2015-09-17 | 住友金属鉱山株式会社 | 酸化物焼結体、スパッタリング用ターゲット、及びそれを用いて得られる酸化物半導体薄膜 |
| KR20150126272A (ko) * | 2014-05-02 | 2015-11-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물의 제작 방법 |
| US20150318171A1 (en) | 2014-05-02 | 2015-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing oxide |
| TWI772799B (zh) | 2014-05-09 | 2022-08-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| TWI672804B (zh) * | 2014-05-23 | 2019-09-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| DE112014006711B4 (de) | 2014-05-30 | 2021-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung, Herstellungsverfahren dafür und elektronische Vorrichtung |
| US9461179B2 (en) * | 2014-07-11 | 2016-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor device (TFT) comprising stacked oxide semiconductor layers and having a surrounded channel structure |
| US10684500B2 (en) | 2015-05-27 | 2020-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Touch panel |
| US10139663B2 (en) | 2015-05-29 | 2018-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Input/output device and electronic device |
| KR20160144314A (ko) | 2015-06-08 | 2016-12-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치 및 그 동작 방법, 및 전자 기기 |
| JP2017003976A (ja) | 2015-06-15 | 2017-01-05 | 株式会社半導体エネルギー研究所 | 表示装置 |
| KR102556718B1 (ko) | 2015-06-19 | 2023-07-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 그 제작 방법, 및 전자 기기 |
| US9860465B2 (en) | 2015-06-23 | 2018-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
| JP5968508B2 (ja) | 2015-07-17 | 2016-08-10 | 株式会社日立製作所 | 不揮発半導体記憶システム |
| WO2017153882A1 (en) | 2016-03-11 | 2017-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and display device including the semiconductor device |
| KR102513161B1 (ko) * | 2016-03-11 | 2023-03-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 복합체 및 트랜지스터 |
-
2017
- 2017-02-27 KR KR1020227003004A patent/KR102513161B1/ko active Active
- 2017-02-27 US US15/443,052 patent/US10516060B2/en active Active
- 2017-02-27 KR KR1020247035037A patent/KR102865888B1/ko active Active
- 2017-02-27 KR KR1020237009473A patent/KR102721654B1/ko active Active
- 2017-02-27 WO PCT/IB2017/051114 patent/WO2017153862A1/en not_active Ceased
- 2017-02-27 KR KR1020187026989A patent/KR102358289B1/ko active Active
- 2017-02-27 CN CN201780016678.0A patent/CN108780819B/zh active Active
- 2017-02-27 CN CN202210549677.5A patent/CN115148824B/zh active Active
- 2017-03-09 TW TW113150910A patent/TWI886086B/zh active
- 2017-03-09 TW TW106107851A patent/TWI829620B/zh active
- 2017-03-09 TW TW112150433A patent/TW202418587A/zh unknown
- 2017-03-09 JP JP2017044532A patent/JP6975541B2/ja active Active
-
2019
- 2019-04-30 JP JP2019087070A patent/JP6817366B2/ja active Active
- 2019-11-21 US US16/690,755 patent/US11417771B2/en active Active
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2021
- 2021-11-08 JP JP2021181631A patent/JP7258108B2/ja active Active
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2022
- 2022-08-10 US US17/884,717 patent/US11869980B2/en active Active
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2023
- 2023-04-04 JP JP2023060760A patent/JP7505079B2/ja active Active
- 2023-12-15 US US18/540,987 patent/US12283633B2/en active Active
-
2024
- 2024-06-12 JP JP2024094973A patent/JP7699697B2/ja active Active
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2025
- 2025-01-16 US US19/023,954 patent/US20250169114A1/en active Pending
- 2025-06-17 JP JP2025101036A patent/JP2025123395A/ja active Pending
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