JP6931208B2 - 低応力低水素ｌｐｃｖｄシリコン窒化物 - Google Patents

低応力低水素ｌｐｃｖｄシリコン窒化物 Download PDF

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JP6931208B2
JP6931208B2 JP2017558375A JP2017558375A JP6931208B2 JP 6931208 B2 JP6931208 B2 JP 6931208B2 JP 2017558375 A JP2017558375 A JP 2017558375A JP 2017558375 A JP2017558375 A JP 2017558375A JP 6931208 B2 JP6931208 B2 JP 6931208B2
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nitride layer
silicon nitride
gate
gan fet
layer
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ステファン デラス ニコラス
ステファン デラス ニコラス
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テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
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    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
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    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
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    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
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    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
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    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0176—Chemical vapour Deposition
    • B81C2201/0177—Epitaxy, i.e. homo-epitaxy, hetero-epitaxy, GaAs-epitaxy
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    • B81—MICROSTRUCTURAL TECHNOLOGY
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  • Health & Medical Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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JP2017558375A 2015-05-07 2016-05-09 低応力低水素ｌｐｃｖｄシリコン窒化物 Active JP6931208B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/706,941 2015-05-07
US14/706,941 US9580304B2 (en) 2015-05-07 2015-05-07 Low-stress low-hydrogen LPCVD silicon nitride
PCT/US2016/031509 WO2016179596A1 (en) 2015-05-07 2016-05-09 Low-stress low-hydrogen lpcvd silicon nitride

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JP2018515926A JP2018515926A (ja) 2018-06-14
JP2018515926A5 JP2018515926A5 (https=) 2019-06-13
JP6931208B2 true JP6931208B2 (ja) 2021-09-01

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JP (1) JP6931208B2 (https=)
CN (1) CN107533974B (https=)
WO (1) WO2016179596A1 (https=)

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JP2018515926A (ja) 2018-06-14
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