JP2018515926A - 低応力低水素lpcvdシリコン窒化物 - Google Patents
低応力低水素lpcvdシリコン窒化物 Download PDFInfo
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- JP2018515926A JP2018515926A JP2017558375A JP2017558375A JP2018515926A JP 2018515926 A JP2018515926 A JP 2018515926A JP 2017558375 A JP2017558375 A JP 2017558375A JP 2017558375 A JP2017558375 A JP 2017558375A JP 2018515926 A JP2018515926 A JP 2018515926A
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- silicon nitride
- nitride layer
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 82
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 82
- 238000004518 low pressure chemical vapour deposition Methods 0.000 title claims abstract description 27
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 239000001257 hydrogen Substances 0.000 title claims abstract description 19
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 41
- 238000004377 microelectronic Methods 0.000 claims abstract description 37
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 35
- 125000006850 spacer group Chemical group 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 21
- 229910002601 GaN Inorganic materials 0.000 claims description 20
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims 5
- 150000004767 nitrides Chemical class 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
- XKMRRTOUMJRJIA-UHFFFAOYSA-N ammonia nh3 Chemical compound N.N XKMRRTOUMJRJIA-UHFFFAOYSA-N 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 229910021529 ammonia Inorganic materials 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000012528 membrane Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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Abstract
Description
が、PMOSトランジスタ404のゲート414及びソース/ドレイン拡張部420の水平表面の上、並びにNMOSトランジスタ406のゲート432及びソース/ドレイン拡張部438の上の、図5Aの高性能シリコン窒化物層450を取り除き、PMOSトランジスタ404のオフセットスペーサ416の垂直表面上のゲート側壁スペーサ424を形成するため、並びにNMOSトランジスタ406のオフセットスペーサ434の垂直表面上のゲート側壁スペーサ442を形成するために、高性能シリコン窒化物層450を残す。高性能シリコン窒化物層450を形成するためのLPCVDプロセスのコンフォーマルの態様により、ゲート側壁スペーサ424及び442が、フォトリソグラフィオペレーションなしに形成され得、有利にも、集積回路400の製造コスト及び複雑性を低減する。
Claims (20)
- マイクロ電子デバイスであって、
基板、及び
前記基板の上に配置されるシリコン窒化物層、
を含み、
前記シリコン窒化物層が、
3:4の比の2パーセント内のシリコン:窒素原子比、
600メカパスカル(MPa)〜1000MPaの応力、及び
5原子百分率未満の水素含有量、
の特性を有する、
マイクロ電子デバイス。 - 請求項1に記載のマイクロ電子デバイスであって、前記シリコン窒化物層が25ナノメートル未満の厚みである、
- 請求項1に記載のマイクロ電子デバイスであって、前記シリコン窒化物層が2.0〜2.1の屈折率を有する、マイクロ電子デバイス。
- 請求項1に記載のマイクロ電子デバイスであって、前記シリコン窒化物層が、12メガボルトパーセンチメートル(MV/cm)より大きい誘電破壊強度を有する、マイクロ電子デバイス。
- 請求項1に記載のマイクロ電子デバイスであって、前記マイクロ電子デバイスが半導体材料を含み、前記シリコン窒化物層が、前記半導体材料から10ナノメートル内である、マイクロ電子デバイス。
- 請求項1に記載のマイクロ電子デバイスであって、前記半導体材料がIII−V半導体材料を含む、マイクロ電子デバイス。
- 請求項1に記載のマイクロ電子デバイスであって、前記マイクロ電子デバイスが、ガリウム窒化物電界効果トランジスタ(GaN FET)を含む、マイクロ電子デバイス。
- 請求項7に記載のマイクロ電子デバイスであって、前記シリコン窒化物層が、III−V半導体材料に接し、前記GaN FETのゲートに接する、マイクロ電子デバイス。
- 請求項1に記載のマイクロ電子デバイスであって、前記マイクロ電子デバイスが、前記NMOSトランジスタの第1のゲートに近接する第1のゲート側壁スペーサを備えるnチャネル金属酸化物半導体(NMOS)トランジスタを含み、前記第1のゲート側壁スペーサが前記シリコン窒化物層を含む、マイクロ電子デバイス。
- 請求項9に記載のマイクロ電子デバイスであって、前記マイクロ電子デバイスが、前記PMOSトランジスタの第2のゲートに近接する第2のゲート側壁スペーサを備えるpチャネル金属酸化物半導体(PMOS)トランジスタを含み、前記第2のゲート側壁スペーサが前記シリコン窒化物層を含む、マイクロ電子デバイス。
- 請求項1に記載のマイクロ電子デバイスであって、前記マイクロ電子デバイスが、カンチレバー状要素を含むマイクロ電子メカニカルシステム(MEMS)デバイスであり、前記シリコン窒化物層が、前記カンチレバー状要素の頂部表面上及び前記カンチレバー状要素の底部表面上に配置される、マイクロ電子デバイス。
- マイクロ電子デバイスを形成する方法であって、
基板を提供すること、
低圧化学気相成長(LPCVD)ファーネスに前記基板を置くこと、
前記LPCVDファーネスにおいて前記基板を800℃〜820℃の温度まで加熱すること、
前記基板の上にシリコン窒化物層を形成するために、アンモニアガス及びジクロロシランガスを4対6の比で、及び150ミリトル〜250ミリトルの圧力で、前記反応チャンバに提供すること、及び
前記LPCVDファーネスから前記基板を取り除くこと、
を含む、方法。 - 請求項12に記載の方法であって、
前記シリコン窒化物層の上にエッチングマスクを形成すること、
前記エッチングマスクにより露出された前記シリコン窒化物層を、フッ素ラジカルを用いる反応性イオンエッチング(RIE)プロセスによって取り除くこと、及び
その後、前記エッチングマスクを取り除くこと、
を含む、方法。 - 請求項13に記載の方法であって、前記シリコン窒化物層に少なくとも部分的に重なる、電気的に導電性の要素を形成することを含む、方法。
- 請求項14に記載の方法であって、電気的に導電性の要素が、GaN FETのゲートであり、前記シリコン窒化物層が、前記基板上のキャップ層上に配置される、方法。
- 請求項12に記載の方法であって、前記シリコン窒化物層が、コンフォーマル層として形成され、フッ素ラジカルを用いる異方性RIEプロセスによって、前記基板の垂直表面上の前記シリコン窒化物層を残して、前記基板の水平表面から前記シリコン窒化物層を取り除くこと含む、方法。
- 請求項16に記載の方法であって、前記マイクロ電子デバイスが、集積回路を含むNMOSトランジスタであり、前記シリコン窒化物層が、前記NMOSトランジスタのゲートの上に形成され、前記異方性RIEプロセスの後に残る前記シリコン窒化物層が、前記NMOSトランジスタの前記ゲートに近接するゲート側壁スペーサを提供する、方法。
- 請求項12に記載の方法であって、前記マイクロ電子デバイスが、カンチレバー状要素を含むMEMSデバイスであり、前記シリコン窒化物層が、前記カンチレバー状要素の頂部表面上及び前記カンチレバー状要素の底部表面上に形成するようにコンフォーマル層として形成される、方法。
- 請求項12に記載の方法であって、前記シリコン窒化物層が、前記シリコン窒化物層により露出されたエリアにおける前記基板から材料が取り除かれるウェットエッチングプロセスの間、前記基板を保護する、方法。
- マイクロ電子デバイスを形成する方法であって、
ガリウム窒化物を含む基板を提供すること、
前記基板上にガリウム窒化物のキャップ層を形成すること、
前記基板をLPCVDファーネス内に置くこと、
前記LPCVDファーネスにおいて前記基板を800℃〜820℃の温度まで加熱すること、
前記キャップ層上のシリコン窒化物層を形成するために、アンモニアガス及びジクロロシランガスを、4対6の比で及び150ミリトル〜250ミリトルの圧力で前記反応チャンバに提供することであって、前記シリコン窒化物層が、3:4の比の2パーセント内のシリコン:窒素原子比と、600メカパスカル(MPa)〜1000MPaの応力と、5原子百分率未満の水素含有量との特性を有する、アンモニアガス及びジクロロシランガスを提供すること、
前記LPCVDファーネスから前記基板を取り除くこと、
前記シリコン窒化物層の上にエッチングマスクを形成すること、
前記エッチングマスクにより露出された前記シリコン窒化物層を、フッ素ラジカルを用いるRIEプロセスによって取り除くこと、
その後、前記エッチングマスクを取り除くこと、及び
前記シリコン窒化物層の一部の間に前記キャップ層の上に及び前記シリコン窒化物層の一部に部分的に重なって、GaN FETのゲートを形成すること、
を含む、方法。
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