CN107533974B - 低应力低氢型lpcvd氮化硅 - Google Patents

低应力低氢型lpcvd氮化硅 Download PDF

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CN107533974B
CN107533974B CN201680028363.3A CN201680028363A CN107533974B CN 107533974 B CN107533974 B CN 107533974B CN 201680028363 A CN201680028363 A CN 201680028363A CN 107533974 B CN107533974 B CN 107533974B
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silicon nitride
nitride layer
layer
gate
forming
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CN107533974A (zh
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N·S·德拉斯
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Texas Instruments Inc
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Texas Instruments Inc
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    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
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    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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  • Health & Medical Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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CN201680028363.3A 2015-05-07 2016-05-09 低应力低氢型lpcvd氮化硅 Active CN107533974B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/706,941 2015-05-07
US14/706,941 US9580304B2 (en) 2015-05-07 2015-05-07 Low-stress low-hydrogen LPCVD silicon nitride
PCT/US2016/031509 WO2016179596A1 (en) 2015-05-07 2016-05-09 Low-stress low-hydrogen lpcvd silicon nitride

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CN107533974A CN107533974A (zh) 2018-01-02
CN107533974B true CN107533974B (zh) 2022-03-18

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US (2) US9580304B2 (https=)
JP (1) JP6931208B2 (https=)
CN (1) CN107533974B (https=)
WO (1) WO2016179596A1 (https=)

Families Citing this family (7)

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Publication number Priority date Publication date Assignee Title
JP6834709B2 (ja) * 2017-04-03 2021-02-24 住友電気工業株式会社 窒化珪素パッシベーション膜の成膜方法及び半導体装置の製造方法
CN110120347B (zh) * 2018-02-05 2023-11-17 住友电气工业株式会社 形成场效应晶体管的方法
JP6984456B2 (ja) * 2018-02-05 2021-12-22 住友電気工業株式会社 電界効果トランジスタの製造方法
JP6997002B2 (ja) 2018-02-19 2022-01-17 住友電気工業株式会社 半導体装置及びその製造方法
CN110429024B (zh) * 2019-08-08 2022-04-15 京东方科技集团股份有限公司 层间绝缘层及薄膜晶体管的制备方法
CN113782420B (zh) * 2021-08-05 2024-07-19 华虹半导体(无锡)有限公司 晶圆加工方法
CN117488273A (zh) * 2023-11-21 2024-02-02 华东光电集成器件研究所 一种低粗糙度厚氮化硅薄膜的制备方法

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4538343A (en) * 1984-06-15 1985-09-03 Texas Instruments Incorporated Channel stop isolation technology utilizing two-step etching and selective oxidation with sidewall masking
US5326649A (en) * 1991-03-27 1994-07-05 Shin-Etsu Chemical Co., Ltd. X-ray transmitting membrane for mask in x-ray lithography and method for preparing the same
US6211033B1 (en) * 1996-01-23 2001-04-03 Micron Technology, Inc. Integrated capacitor bottom electrode for use with conformal dielectric
US6214697B1 (en) * 1997-12-18 2001-04-10 Micron Technology, Inc Trench isolation for semiconductor devices
US20030178633A1 (en) * 2002-03-25 2003-09-25 Flynn Jeffrey S. Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same
US20050112817A1 (en) * 2003-11-25 2005-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having high drive current and method of manufacture thereof
JP2009164300A (ja) * 2007-12-28 2009-07-23 Fujitsu Ltd 半導体装置及びその製造方法
US20110079822A1 (en) * 2009-10-02 2011-04-07 Fujitsu Limited Compound semiconductor device and manufacturing method
US20110187798A1 (en) * 2007-07-19 2011-08-04 Rogers John A High Resolution Electrohydrodynamic Jet Printing for Manufacturing Systems
US8063434B1 (en) * 2007-05-25 2011-11-22 Cypress Semiconductor Corporation Memory transistor with multiple charge storing layers and a high work function gate electrode
US20110297961A1 (en) * 2010-05-02 2011-12-08 Visic Technologies Ltd. Field effect power transistors
US20120104505A1 (en) * 2010-10-28 2012-05-03 International Business Machines Corporation Structure and method for using high-k material as an etch stop layer in dual stress layer process
US20120255932A1 (en) * 2010-07-15 2012-10-11 Massood Tabib-Azar Nanofabrication device and method for manufacture of a nanofabrication device
US20130178031A1 (en) * 2007-05-25 2013-07-11 Cypress Semiconductor Corporation Integration of non-volatile charge trap memory devices and logic cmos devices
JP2013175726A (ja) * 2012-02-23 2013-09-05 Efficient Power Conversion Corp ゲートスペーサを備えたエンハンスメントモードＧａＮＨＥＭＴデバイス、及びその製造方法
US20150004421A1 (en) * 2012-02-08 2015-01-01 Az Electronic Materials Usa Corp. Inorganic polysilazane resin

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH056890A (ja) * 1990-10-15 1993-01-14 Seiko Epson Corp パツシベーシヨン多層膜を備えた半導体装置及びその製造方法
US6316820B1 (en) * 1997-07-25 2001-11-13 Hughes Electronics Corporation Passivation layer and process for semiconductor devices
WO2000017695A1 (en) * 1998-09-24 2000-03-30 Reflectivity, Inc. A double substrate reflective spatial light modulator with self-limiting micro-mechanical elements
JP2005286135A (ja) * 2004-03-30 2005-10-13 Eudyna Devices Inc 半導体装置および半導体装置の製造方法
US7547911B2 (en) * 2004-08-27 2009-06-16 National Institute Of Information And Communications Technology, Incorporated Administrative Agency Gan-based field effect transistor and production method therefor
TWI263265B (en) * 2005-02-13 2006-10-01 United Microelectronics Corp Method for fabricating ultra-high tensile-stressed film and strained-silicon transistors thereof
JP4968067B2 (ja) * 2005-06-10 2012-07-04 日本電気株式会社 電界効果トランジスタ
US7855401B2 (en) * 2005-06-29 2010-12-21 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
JP2008034522A (ja) * 2006-07-27 2008-02-14 Oki Electric Ind Co Ltd 電界効果トランジスタ
JP5345328B2 (ja) * 2008-02-22 2013-11-20 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
WO2010079574A1 (ja) * 2009-01-09 2010-07-15 パナソニック株式会社 Ｍｅｍｓデバイス
JP5685020B2 (ja) * 2010-07-23 2015-03-18 住友電気工業株式会社 半導体装置の製造方法
CN102446840A (zh) * 2011-11-02 2012-05-09 上海华力微电子有限公司 一种增加双大马士革结构介质阻挡层薄膜击穿电压的方法
US9111868B2 (en) * 2012-06-26 2015-08-18 Freescale Semiconductor, Inc. Semiconductor device with selectively etched surface passivation
JP2014029908A (ja) * 2012-07-31 2014-02-13 Toyota Central R&D Labs Inc 半導体装置および半導体装置の製造方法
US9224532B2 (en) * 2012-10-11 2015-12-29 The Board Of Trustees Of The University Of Illinois Rolled-up inductor structure for a radiofrequency integrated circuit (RFIC)
JP6339762B2 (ja) * 2013-01-17 2018-06-06 富士通株式会社 半導体装置及びその製造方法、電源装置、高周波増幅器
US9035318B2 (en) * 2013-05-03 2015-05-19 Texas Instruments Incorporated Avalanche energy handling capable III-nitride transistors

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4538343A (en) * 1984-06-15 1985-09-03 Texas Instruments Incorporated Channel stop isolation technology utilizing two-step etching and selective oxidation with sidewall masking
US5326649A (en) * 1991-03-27 1994-07-05 Shin-Etsu Chemical Co., Ltd. X-ray transmitting membrane for mask in x-ray lithography and method for preparing the same
US6211033B1 (en) * 1996-01-23 2001-04-03 Micron Technology, Inc. Integrated capacitor bottom electrode for use with conformal dielectric
US6214697B1 (en) * 1997-12-18 2001-04-10 Micron Technology, Inc Trench isolation for semiconductor devices
US20030178633A1 (en) * 2002-03-25 2003-09-25 Flynn Jeffrey S. Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same
US20050112817A1 (en) * 2003-11-25 2005-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having high drive current and method of manufacture thereof
US20130178031A1 (en) * 2007-05-25 2013-07-11 Cypress Semiconductor Corporation Integration of non-volatile charge trap memory devices and logic cmos devices
US8063434B1 (en) * 2007-05-25 2011-11-22 Cypress Semiconductor Corporation Memory transistor with multiple charge storing layers and a high work function gate electrode
US20110187798A1 (en) * 2007-07-19 2011-08-04 Rogers John A High Resolution Electrohydrodynamic Jet Printing for Manufacturing Systems
JP2009164300A (ja) * 2007-12-28 2009-07-23 Fujitsu Ltd 半導体装置及びその製造方法
US20110079822A1 (en) * 2009-10-02 2011-04-07 Fujitsu Limited Compound semiconductor device and manufacturing method
US20110297961A1 (en) * 2010-05-02 2011-12-08 Visic Technologies Ltd. Field effect power transistors
US20120255932A1 (en) * 2010-07-15 2012-10-11 Massood Tabib-Azar Nanofabrication device and method for manufacture of a nanofabrication device
US20120104505A1 (en) * 2010-10-28 2012-05-03 International Business Machines Corporation Structure and method for using high-k material as an etch stop layer in dual stress layer process
US20150004421A1 (en) * 2012-02-08 2015-01-01 Az Electronic Materials Usa Corp. Inorganic polysilazane resin
JP2013175726A (ja) * 2012-02-23 2013-09-05 Efficient Power Conversion Corp ゲートスペーサを備えたエンハンスメントモードＧａＮＨＥＭＴデバイス、及びその製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
《LPCVD and PECVD silicon nitride for microelectronics technology》;B C Joshi等;《Indian Hournal of Engineering & Materials Sciences》;20001031;第7卷;全文 *
《LPCVD silicon-rich silicon nitride films for applications in micromechanics,》;J. G. E. Gardeniers等;《Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 》;19961031;第14卷(第5期);全文 *

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