JP6884823B2 - 電気素子搭載用パッケージ、アレイ型パッケージおよび電気装置 - Google Patents
電気素子搭載用パッケージ、アレイ型パッケージおよび電気装置 Download PDFInfo
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- JP6884823B2 JP6884823B2 JP2019128823A JP2019128823A JP6884823B2 JP 6884823 B2 JP6884823 B2 JP 6884823B2 JP 2019128823 A JP2019128823 A JP 2019128823A JP 2019128823 A JP2019128823 A JP 2019128823A JP 6884823 B2 JP6884823 B2 JP 6884823B2
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- 239000004020 conductor Substances 0.000 claims description 165
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 165
- 239000000758 substrate Substances 0.000 claims description 130
- 229910052751 metal Inorganic materials 0.000 claims description 77
- 239000002184 metal Substances 0.000 claims description 77
- 238000007789 sealing Methods 0.000 claims description 60
- 239000000919 ceramic Substances 0.000 claims description 12
- 230000005611 electricity Effects 0.000 claims 2
- 239000010408 film Substances 0.000 description 61
- 230000017525 heat dissipation Effects 0.000 description 28
- 238000004519 manufacturing process Methods 0.000 description 24
- 238000012986 modification Methods 0.000 description 22
- 230000004048 modification Effects 0.000 description 22
- 230000003287 optical effect Effects 0.000 description 16
- 230000005855 radiation Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 10
- 239000000843 powder Substances 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 239000011889 copper foil Substances 0.000 description 7
- 238000001514 detection method Methods 0.000 description 7
- 238000005304 joining Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000012787 coverlay film Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000011104 metalized film Substances 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 229910015363 Au—Sn Inorganic materials 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229920005822 acrylic binder Polymers 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- 229910017980 Ag—Sn Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 235000012255 calcium oxide Nutrition 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02315—Support members, e.g. bases or carriers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
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- Structure Of Printed Boards (AREA)
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Description
最初に、第1実施形態に係る発光素子搭載用パッケージA1の概要について、図1Aおよび図1Bを用いて説明する。
次に、第2実施形態に係る発光素子搭載用パッケージA2の構成について、図2A〜図2Cを用いて説明する。
次に、実施形態に係る発光素子搭載用パッケージの各種変形例について、図3A〜図7Cを用いて説明する。図3Aに示す発光素子搭載用パッケージA3は、第1実施形態に係る発光素子搭載用パッケージA1の変形例であり、図3Aは図1Bに対応する断面図である。
次に、各実施形態に係る発光素子搭載用パッケージの製造方法について説明する。
C1 アレイ型パッケージ
10 基板
10a おもて面
10b 裏面
10c 溝
10d 端面
10e 側面
10f、10g 凹部
11 台座
11a 搭載面
11b 側面
11A 第1台座
11B 第2台座
11C 混成台座
11C1 赤色用混成台座
11C2 緑色用混成台座
11C3 青色用混成台座
12a、12b 素子用端子
13 側面導体
14 平面導体
15a、15b 基板側ビア導体
16a、16b 電源用端子
16c、16d 縁
17a、17b 配線導体
18a、18b 端子側ビア導体
19 台座側ビア導体
20 封止用金属膜
21 金属膜
30 発光素子
30a 放射面
31 レーザダイオード
31R 赤色レーザダイオード
31G 緑色レーザダイオード
31B 青色レーザダイオード
32、32R、32G、32B フォトダイオード
40 キャップ
41 横窓
Claims (14)
- 平板状の基板と、
前記基板のおもて面から突出し、電気素子が搭載される搭載面を有する1つ以上の台座と、
を備え、
前記基板と前記台座とはセラミックスで一体的に形成されており、
前記基板の前記おもて面側に前記台座を取り巻くように封止用金属膜が設けられており、
前記台座は、前記封止用金属膜の内側の領域に複数設けられており、
前記基板の内部に設けられ、前記基板の面方向に延びる配線導体を備え、
前記封止用金属膜の外側に設けられる電源用端子を備え、
前記電源用端子と前記配線導体とは接続されており、
前記基板の前記おもて面に前記台座を取り巻くように溝が設けられており、
前記封止用金属膜は、前記溝の内部に設けられる、
電気素子搭載用パッケージ。 - 平板状の基板と、
前記基板のおもて面から突出し、電気素子が搭載される搭載面を有する1つ以上の台座と、
を備え、
前記基板と前記台座とはセラミックスで一体的に形成されており、
前記基板の前記おもて面側に前記台座を取り巻くように封止用金属膜が設けられており、
前記台座は、前記封止用金属膜の内側の領域に複数設けられており、
前記基板の内部に設けられ、前記基板の面方向に延びる配線導体を備え、
前記配線導体は、前記基板の前記おもて面より、前記基板の裏面に近い位置に設けられ、
前記封止用金属膜の外側に設けられる電源用端子を備え、
前記電源用端子と前記配線導体とは接続されており、
前記基板の前記おもて面に前記台座を取り巻くように溝が設けられており、
前記封止用金属膜は、前記溝の内部に設けられる、
電気素子搭載用パッケージ。 - 前記電源用端子は、
前記基板の前記おもて面より低い位置に設けられる、請求項1または2に記載の電気素子搭載用パッケージ。 - 前記電源用端子の外縁は、交差する2つの直線状の縁を有し、該2つの縁がそれぞれ前記基板の端面および側面の縁に合うように位置している、請求項1〜3のいずれか一つに記載の電気素子搭載用パッケージ。
- 前記封止用金属膜の内側の領域は、
前記台座の部分を除いて前記基板の前記おもて面より凹んでいる、請求項1〜4のいずれか一つに記載の電気素子搭載用パッケージ。 - 平板状の基板と、
前記基板のおもて面から突出し、電気素子が搭載される搭載面を有する1つ以上の台座と、
を備え、
前記基板と前記台座とはセラミックスで一体的に形成されており、
前記基板の前記おもて面側に前記台座を取り巻くように封止用金属膜が設けられており、
前記台座は、前記封止用金属膜の内側の領域に複数設けられており、
前記封止用金属膜の内側の領域に、前記台座として、第1台座および第2台座を有する混成台座が設けられており、
該混成台座は、前記第2台座の高さが前記第1台座の高さより低い、
電気素子搭載用パッケージ。 - 前記封止用金属膜の内側の領域に、前記混成台座が3組設けられている、請求項6に記載の電気素子搭載用パッケージ。
- 3組の前記混成台座は、
赤色レーザダイオードを搭載するための前記第1台座を有する赤色用混成台座と、
緑色レーザダイオードを搭載するための前記第1台座を有する緑色用混成台座と、
青色レーザダイオードを搭載するための前記第1台座を有する青色用混成台座と、
を含み、
前記赤色用混成台座と前記緑色用混成台座との間隔、または前記赤色用混成台座と前記青色用混成台座との間隔のうち狭いほうの間隔は、
前記緑色用混成台座と前記青色用混成台座との間隔よりも広い間隔である、請求項7に記載の電気素子搭載用パッケージ。 - 3組の前記混成台座は、それぞれ搭載されるレーザダイオードから出射される光の向きが、3組の前記混成台座に衝突しない方向に向くように配置されている、請求項7または8に記載の電気素子搭載用パッケージ。
- 請求項1〜9のいずれか一つに記載の電気素子搭載用パッケージが複数連結されている、アレイ型パッケージ。
- 電気素子搭載用パッケージ同士が一体焼結したものである、請求項10に記載のアレイ型パッケージ。
- 請求項1〜9のいずれか一つに記載の電気素子搭載用パッケージと、
前記電気素子搭載用パッケージの前記搭載面に搭載される電気素子と、を備える、電気装置。 - 請求項1〜9のいずれか一つに記載の電気素子搭載用パッケージと、
前記電気素子搭載用パッケージの前記搭載面に搭載される電気素子と、
前記封止用金属膜上に設けられ横窓を有するキャップと、を備える、電気装置。 - 請求項10または11に記載のアレイ型パッケージと、該アレイ型パッケージの搭載面に搭載される電気素子と、を備える、電気装置。
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