JP2018110262A - 電気素子搭載用パッケージ、アレイ型パッケージおよび電気装置 - Google Patents
電気素子搭載用パッケージ、アレイ型パッケージおよび電気装置 Download PDFInfo
- Publication number
- JP2018110262A JP2018110262A JP2018039007A JP2018039007A JP2018110262A JP 2018110262 A JP2018110262 A JP 2018110262A JP 2018039007 A JP2018039007 A JP 2018039007A JP 2018039007 A JP2018039007 A JP 2018039007A JP 2018110262 A JP2018110262 A JP 2018110262A
- Authority
- JP
- Japan
- Prior art keywords
- pedestal
- element mounting
- substrate
- light emitting
- mounting package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 claims abstract description 175
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 109
- 239000000919 ceramic Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 126
- 229910052751 metal Inorganic materials 0.000 claims description 70
- 239000002184 metal Substances 0.000 claims description 70
- 238000007789 sealing Methods 0.000 claims description 53
- 239000000463 material Substances 0.000 abstract description 19
- 230000005855 radiation Effects 0.000 abstract description 11
- 239000010408 film Substances 0.000 description 60
- 230000004048 modification Effects 0.000 description 45
- 238000012986 modification Methods 0.000 description 45
- 230000017525 heat dissipation Effects 0.000 description 30
- 238000004519 manufacturing process Methods 0.000 description 24
- 230000003287 optical effect Effects 0.000 description 16
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 10
- 238000001514 detection method Methods 0.000 description 10
- 239000000843 powder Substances 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 239000011889 copper foil Substances 0.000 description 7
- 239000012787 coverlay film Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 238000003825 pressing Methods 0.000 description 5
- 238000005304 joining Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000011104 metalized film Substances 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 229910015363 Au—Sn Inorganic materials 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229920005822 acrylic binder Polymers 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- 229910017980 Ag—Sn Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 235000012255 calcium oxide Nutrition 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- ZXGIFJXRQHZCGJ-UHFFFAOYSA-N erbium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Er+3].[Er+3] ZXGIFJXRQHZCGJ-UHFFFAOYSA-N 0.000 description 1
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(III) oxide Inorganic materials O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000010399 three-hybrid screening Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02315—Support members, e.g. bases or carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
- H01S5/4093—Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15192—Resurf arrangement of the internal vias
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02255—Out-coupling of light using beam deflecting elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Geometry (AREA)
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
- Structure Of Printed Boards (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
【解決手段】本開示の電気素子搭載用パッケージは、平板状の基板と、基板のおもて面から突出し、電気素子が搭載される搭載面を有する1つ以上の台座と、を備え、基板と台座とはセラミックスで一体的に形成されている。電気素子搭載用パッケージは、台座の搭載面に設けられる素子用端子と、台座の側面に設けられ、台座の厚み方向に延びる側面導体と、基板の内部に設けられ、基板の厚み方向に延びる基板側ビア導体と、を備え、素子用端子と側面導体と基板側ビア導体とは接続されている。
【選択図】図1A
Description
最初に、第1実施形態に係る発光素子搭載用パッケージA1の概要について、図1Aおよび図1Bを用いて説明する。
次に、第2実施形態に係る発光素子搭載用パッケージA2の構成について、図2A〜図2Cを用いて説明する。
次に、実施形態に係る発光素子搭載用パッケージの各種変形例について、図3A〜図7Cを用いて説明する。図3Aに示す発光素子搭載用パッケージA3は、第1実施形態に係る発光素子搭載用パッケージA1の変形例であり、図3Aは図1Bに対応する断面図である。
次に、各実施形態に係る発光素子搭載用パッケージの製造方法について説明する。
C1 アレイ型パッケージ
10 基板
10a おもて面
10b 裏面
10c 溝
10d 端面
10e 側面
10f、10g 凹部
11 台座
11a 搭載面
11b 側面
11A 第1台座
11B 第2台座
11C 混成台座
11C1 赤色用混成台座
11C2 緑色用混成台座
11C3 青色用混成台座
12a、12b 素子用端子
13 側面導体
14 平面導体
15a、15b 基板側ビア導体
16a、16b 電源用端子
16c、16d 縁
17a、17b 配線導体
18a、18b 端子側ビア導体
19 台座側ビア導体
20 封止用金属膜
21 金属膜
30 発光素子
30a 放射面
31 レーザダイオード
31R 赤色レーザダイオード
31G 緑色レーザダイオード
31B 青色レーザダイオード
32、32R、32G、32B フォトダイオード
40 キャップ
41 横窓
Claims (20)
- 平板状の基板と、
前記基板のおもて面から突出し、電気素子が搭載される搭載面を有する1つ以上の台座と、
を備え、
前記基板と前記台座とはセラミックスで一体的に形成されている、電気素子搭載用パッケージ。 - 前記台座の前記搭載面に設けられる素子用端子と、
前記台座の側面に設けられ、前記台座の厚み方向に延びる側面導体と、
前記基板の内部に設けられ、前記基板の厚み方向に延びる基板側ビア導体と、
を備え、
前記素子用端子と前記側面導体と前記基板側ビア導体とは接続されている、請求項1に記載の電気素子搭載用パッケージ。 - 前記台座の前記搭載面に設けられる素子用端子と、
前記台座の内部に設けられ、前記台座の厚み方向に延びる台座側ビア導体と、
前記基板の内部に設けられ、前記基板の厚み方向に延びる基板側ビア導体と、
を備え、
前記素子用端子と前記台座側ビア導体と前記基板側ビア導体とは接続されている、請求項1に記載の電気素子搭載用パッケージ。 - 前記基板の内部に設けられ、前記基板の面方向に延びる配線導体を備え、
前記配線導体と前記基板側ビア導体とは接続されている、請求項2または3に記載の電気素子搭載用パッケージ。 - 前記配線導体は、
前記基板の前記おもて面より、前記基板の裏面に近い位置に設けられる、請求項4に記載の電気素子搭載用パッケージ。 - 前記基板の前記おもて面側に前記台座を取り巻くように設けられる封止用金属膜と、
前記封止用金属膜の外側に設けられる電源用端子と、を備え、
前記電源用端子と前記配線導体とは接続されている、請求項4または5に記載の電気素子搭載用パッケージ。 - 前記基板の前記おもて面に前記台座を取り巻くように溝が設けられており、
前記封止用金属膜は、前記溝の内部に設けられる、請求項6に記載の電気素子搭載用パッケージ。 - 前記電源用端子は、
前記基板の前記おもて面より低い位置に設けられる、請求項6または7に記載の電気素子搭載用パッケージ。 - 前記電源用端子の外縁は、交差する2つの直線状の縁を有し、該2つの縁がそれぞれ前記基板の端面および側面の縁に合うように位置している、請求項6〜8のいずれか一つに記載の電気素子搭載用パッケージ。
- 前記封止用金属膜の内側の領域は、
前記台座の部分を除いて前記基板の前記おもて面より凹んでいる、請求項6〜9のいずれか一つに記載の電気素子搭載用パッケージ。 - 前記封止用金属膜の内側の領域に、前記台座が複数設けられる、請求項6〜10のいずれか一つに記載の電気素子搭載用パッケージ。
- 前記封止用金属膜の内側の領域に、前記台座として、第1台座および第2台座を有する混成台座が設けられており、
該混成台座は、前記第2台座の高さが前記第1台座の高さより低い、請求項11に記載の電気素子搭載用パッケージ。 - 前記封止用金属膜の内側の領域に、前記混成台座が3組設けられている、請求項12に記載の電気素子搭載用パッケージ。
- 3組の前記混成台座は、
赤色レーザダイオードを搭載するための前記第1台座を有する赤色用混成台座と、
緑色レーザダイオードを搭載するための前記第1台座を有する緑色用混成台座と、
青色レーザダイオードを搭載するための前記第1台座を有する青色用混成台座と、
を含み、
前記赤色用混成台座と前記緑色用混成台座との間隔、または前記赤色用混成台座と前記青色用混成台座との間隔のうち狭いほうの間隔は、
前記緑色用混成台座と前記青色用混成台座との間隔よりも広い間隔である、請求項13に記載の電気素子搭載用パッケージ。 - 3組の前記混成台座は、それぞれ搭載されるレーザダイオードから出射される光の向きが、3組の前記混成台座に衝突しない方向に向くように配置されている、請求項13または14に記載の電気素子搭載用パッケージ。
- 請求項1〜15のいずれか一つに記載の電気素子搭載用パッケージが複数連結されている、アレイ型パッケージ。
- 電気素子搭載用パッケージ同士が一体焼結したものである、請求項16に記載のアレイ型パッケージ。
- 請求項1〜15のいずれか一つに記載の電気素子搭載用パッケージと、
前記電気素子搭載用パッケージの前記搭載面に搭載される電気素子と、を備える、電気装置。 - 請求項6〜15のいずれか一つに記載の電気素子搭載用パッケージと、
前記電気素子搭載用パッケージの前記搭載面に搭載される電気素子と、
前記封止用金属膜上に設けられ横窓を有するキャップと、を備える、電気装置。 - 請求項16または17に記載のアレイ型パッケージと、該アレイ型パッケージの搭載面に搭載される電気素子と、を備える、電気装置。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016157221 | 2016-08-10 | ||
JP2016157221 | 2016-08-10 | ||
JP2016221034 | 2016-11-11 | ||
JP2016221034 | 2016-11-11 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017566048A Division JP6305668B1 (ja) | 2016-08-10 | 2017-08-09 | 電気素子搭載用パッケージ、アレイ型パッケージおよび電気装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019128822A Division JP6754479B2 (ja) | 2016-08-10 | 2019-07-10 | 電気素子搭載用パッケージ、アレイ型パッケージおよび電気装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018110262A true JP2018110262A (ja) | 2018-07-12 |
JP6577616B2 JP6577616B2 (ja) | 2019-09-18 |
Family
ID=61162365
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017566048A Active JP6305668B1 (ja) | 2016-08-10 | 2017-08-09 | 電気素子搭載用パッケージ、アレイ型パッケージおよび電気装置 |
JP2018039008A Active JP6577617B2 (ja) | 2016-08-10 | 2018-03-05 | 電気素子搭載用パッケージ、アレイ型パッケージおよび電気装置 |
JP2018039007A Active JP6577616B2 (ja) | 2016-08-10 | 2018-03-05 | 電気素子搭載用パッケージ、アレイ型パッケージおよび電気装置 |
JP2019128822A Active JP6754479B2 (ja) | 2016-08-10 | 2019-07-10 | 電気素子搭載用パッケージ、アレイ型パッケージおよび電気装置 |
JP2019128823A Active JP6884823B2 (ja) | 2016-08-10 | 2019-07-10 | 電気素子搭載用パッケージ、アレイ型パッケージおよび電気装置 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017566048A Active JP6305668B1 (ja) | 2016-08-10 | 2017-08-09 | 電気素子搭載用パッケージ、アレイ型パッケージおよび電気装置 |
JP2018039008A Active JP6577617B2 (ja) | 2016-08-10 | 2018-03-05 | 電気素子搭載用パッケージ、アレイ型パッケージおよび電気装置 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019128822A Active JP6754479B2 (ja) | 2016-08-10 | 2019-07-10 | 電気素子搭載用パッケージ、アレイ型パッケージおよび電気装置 |
JP2019128823A Active JP6884823B2 (ja) | 2016-08-10 | 2019-07-10 | 電気素子搭載用パッケージ、アレイ型パッケージおよび電気装置 |
Country Status (9)
Country | Link |
---|---|
US (2) | US20190214784A1 (ja) |
EP (1) | EP3499559B1 (ja) |
JP (5) | JP6305668B1 (ja) |
KR (1) | KR102449952B1 (ja) |
CN (1) | CN109564900B (ja) |
BR (1) | BR112019001967A2 (ja) |
RU (1) | RU2019106302A (ja) |
SG (1) | SG11201901073XA (ja) |
WO (1) | WO2018030486A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022016297A (ja) * | 2020-07-10 | 2022-01-21 | 日亜化学工業株式会社 | 半導体装置、及び半導体装置の製造方法 |
WO2023074342A1 (ja) * | 2021-10-25 | 2023-05-04 | 京セラ株式会社 | 電子素子実装用基板、電子装置、および電子モジュール |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US12046868B2 (en) | 2018-03-08 | 2024-07-23 | Kyocera Corporation | Substrate for mounting a light-emitting element and light-emitting device |
DE102018106959A1 (de) * | 2018-03-23 | 2019-09-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements |
JP7148276B2 (ja) * | 2018-05-30 | 2022-10-05 | 京セラ株式会社 | 発光素子搭載用パッケージおよび発光装置 |
JP6936839B2 (ja) * | 2018-10-05 | 2021-09-22 | 日本特殊陶業株式会社 | 配線基板 |
JP6775071B2 (ja) * | 2018-10-05 | 2020-10-28 | 日本特殊陶業株式会社 | 配線基板 |
US10985087B2 (en) | 2018-10-05 | 2021-04-20 | Ngk Spark Plug Co., Ltd. | Wiring board |
JP7351610B2 (ja) * | 2018-10-30 | 2023-09-27 | 浜松ホトニクス株式会社 | 光検出装置 |
KR101979265B1 (ko) * | 2019-01-28 | 2019-08-28 | 이민희 | 전력 반도체 모듈 패키지 및 이의 제조방법 |
JP7311301B2 (ja) * | 2019-04-19 | 2023-07-19 | シャープ株式会社 | 発光装置 |
JP7275894B2 (ja) * | 2019-06-20 | 2023-05-18 | 株式会社デンソー | 半導体レーザ光源モジュール、半導体レーザ装置 |
EP4012760A4 (en) * | 2019-08-09 | 2023-10-25 | Kyocera Corporation | OPTICAL ELEMENT MOUNTING BOX, ELECTRONIC DEVICE AND ELECTRONIC MODULE |
US11573485B2 (en) * | 2019-09-03 | 2023-02-07 | Himax Technologies Limited | Projector, 3D sensing module and method for fabricating the projector |
JP7470517B2 (ja) * | 2020-02-05 | 2024-04-18 | 古河電気工業株式会社 | 光学装置 |
DE102020105005A1 (de) | 2020-02-26 | 2021-08-26 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Substrat und halbleiterlaser |
JP2021163950A (ja) * | 2020-04-03 | 2021-10-11 | Dowaエレクトロニクス株式会社 | 光半導体パッケージの製造方法及び光半導体パッケージ |
WO2021210464A1 (ja) * | 2020-04-16 | 2021-10-21 | ヌヴォトンテクノロジージャパン株式会社 | アレー型半導体レーザ装置 |
WO2021241332A1 (ja) * | 2020-05-29 | 2021-12-02 | 京セラ株式会社 | 光導波路パッケージおよび発光装置 |
WO2022172374A1 (ja) * | 2021-02-10 | 2022-08-18 | セーレンKst株式会社 | 合成光生成装置及びその製造方法 |
JPWO2022230731A1 (ja) * | 2021-04-26 | 2022-11-03 | ||
WO2023119768A1 (ja) * | 2021-12-22 | 2023-06-29 | ローム株式会社 | レーザダイオード装置 |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0334909Y2 (ja) | 1985-05-31 | 1991-07-24 | ||
EP0547807A3 (en) * | 1991-12-16 | 1993-09-22 | General Electric Company | Packaged electronic system |
JPH09237854A (ja) * | 1996-02-29 | 1997-09-09 | Toshiba Corp | 半導体用パッケージ |
JP2000196175A (ja) * | 1998-12-28 | 2000-07-14 | Toshiba Corp | サブキャリア及び半導体装置 |
JP3536763B2 (ja) * | 2000-02-04 | 2004-06-14 | 日本電気株式会社 | 封止装置 |
JP2002246523A (ja) * | 2001-02-16 | 2002-08-30 | Matsushita Electric Ind Co Ltd | セラミック端子の製造方法 |
JP2003008072A (ja) * | 2001-06-25 | 2003-01-10 | Citizen Electronics Co Ltd | 発光ダイオード |
JP2003163382A (ja) * | 2001-11-29 | 2003-06-06 | Matsushita Electric Ind Co Ltd | 受光素子または発光素子用パッケージ |
JP2004311860A (ja) * | 2003-04-10 | 2004-11-04 | Sony Corp | 光集積型装置 |
US20050133808A1 (en) | 2003-09-11 | 2005-06-23 | Kyocera Corporation | Package for housing light-emitting element, light-emitting apparatus and illumination apparatus |
TWI245436B (en) | 2003-10-30 | 2005-12-11 | Kyocera Corp | Package for housing light-emitting element, light-emitting apparatus and illumination apparatus |
US6946726B1 (en) * | 2003-11-26 | 2005-09-20 | Actel Corporation | Chip carrier substrate with a land grid array and external bond terminals |
JP4511238B2 (ja) * | 2004-04-27 | 2010-07-28 | 京セラ株式会社 | 発光素子収納用パッケージおよび発光装置ならびに照明装置 |
JP4593974B2 (ja) * | 2004-05-27 | 2010-12-08 | 京セラ株式会社 | 発光装置および照明装置 |
JP5065888B2 (ja) * | 2005-03-24 | 2012-11-07 | 京セラ株式会社 | 発光装置ならびに照明装置 |
TWI302036B (en) * | 2005-04-01 | 2008-10-11 | Unimems Mfg Co Ltd | Infrared imaging sensor and vacuum packaging method thereof |
JP2007201420A (ja) * | 2005-12-27 | 2007-08-09 | Sharp Corp | 半導体発光装置、半導体発光素子、および半導体発光装置の製造方法 |
JP2007273603A (ja) * | 2006-03-30 | 2007-10-18 | Kyocera Corp | 発光素子用配線基板および発光装置 |
JP4653005B2 (ja) * | 2006-04-17 | 2011-03-16 | 富士通株式会社 | 電子部品パッケージ |
JP4844246B2 (ja) * | 2006-06-09 | 2011-12-28 | 豊田合成株式会社 | 発光装置及び液晶表示用バックライト装置 |
US8008674B2 (en) * | 2006-05-29 | 2011-08-30 | Toyoda Gosei Co., Ltd. | Light emitting device and LCD backlighting device |
CN101361240B (zh) * | 2006-05-31 | 2011-04-06 | 松下电器产业株式会社 | 半导体光源装置及发光元件驱动电路 |
JP2008015434A (ja) * | 2006-07-10 | 2008-01-24 | Nippon Telegr & Teleph Corp <Ntt> | 光モジュールおよびその製造方法 |
US8320102B2 (en) | 2006-09-27 | 2012-11-27 | Kyocera Corporation | Capacitor, capacitor device, electronic component, filter device, communication apparatus, and method of manufacturing capacitor device |
JP5435854B2 (ja) * | 2007-10-13 | 2014-03-05 | 日亜化学工業株式会社 | 半導体発光装置 |
JP4492733B2 (ja) * | 2008-05-27 | 2010-06-30 | ソニー株式会社 | 発光装置及び発光装置の製造方法 |
JP2010166023A (ja) * | 2008-09-30 | 2010-07-29 | Sanyo Electric Co Ltd | 半導体レーザ装置および表示装置 |
JP5126127B2 (ja) * | 2009-03-17 | 2013-01-23 | 豊田合成株式会社 | 発光装置の製造方法 |
TWM374650U (en) * | 2009-04-20 | 2010-02-21 | Hsin I Technology Co Ltd | LED packaging structure |
WO2011083812A1 (ja) | 2010-01-06 | 2011-07-14 | 株式会社フジクラ | 光結合構造および光送受信モジュール |
CN102403306B (zh) * | 2010-09-10 | 2015-09-02 | 展晶科技(深圳)有限公司 | 发光二极管封装结构 |
JP5472031B2 (ja) * | 2010-10-21 | 2014-04-16 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP5812671B2 (ja) * | 2011-04-28 | 2015-11-17 | 京セラ株式会社 | 素子収納用パッケージおよびこれを備えた半導体装置 |
JP5427325B2 (ja) * | 2011-11-30 | 2014-02-26 | パナソニック株式会社 | 窒化物半導体発光装置 |
JP2014116514A (ja) | 2012-12-11 | 2014-06-26 | Toshiba Lighting & Technology Corp | 発光素子パッケージおよび照明装置 |
JP7073716B2 (ja) | 2015-07-21 | 2022-05-24 | 住友ベークライト株式会社 | 熱伝導性樹脂組成物、熱伝導性シートおよび半導体装置 |
US11437775B2 (en) * | 2015-08-19 | 2022-09-06 | Kyocera Sld Laser, Inc. | Integrated light source using a laser diode |
-
2017
- 2017-08-09 BR BR112019001967-7A patent/BR112019001967A2/pt not_active Application Discontinuation
- 2017-08-09 WO PCT/JP2017/028988 patent/WO2018030486A1/ja unknown
- 2017-08-09 KR KR1020197002529A patent/KR102449952B1/ko active IP Right Grant
- 2017-08-09 US US16/323,803 patent/US20190214784A1/en not_active Abandoned
- 2017-08-09 JP JP2017566048A patent/JP6305668B1/ja active Active
- 2017-08-09 CN CN201780047560.4A patent/CN109564900B/zh active Active
- 2017-08-09 RU RU2019106302A patent/RU2019106302A/ru not_active Application Discontinuation
- 2017-08-09 SG SG11201901073XA patent/SG11201901073XA/en unknown
- 2017-08-09 EP EP17839553.9A patent/EP3499559B1/en active Active
-
2018
- 2018-03-05 JP JP2018039008A patent/JP6577617B2/ja active Active
- 2018-03-05 JP JP2018039007A patent/JP6577616B2/ja active Active
-
2019
- 2019-07-10 JP JP2019128822A patent/JP6754479B2/ja active Active
- 2019-07-10 JP JP2019128823A patent/JP6884823B2/ja active Active
-
2021
- 2021-12-01 US US17/539,882 patent/US11784459B2/en active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022016297A (ja) * | 2020-07-10 | 2022-01-21 | 日亜化学工業株式会社 | 半導体装置、及び半導体装置の製造方法 |
JP7223234B2 (ja) | 2020-07-10 | 2023-02-16 | 日亜化学工業株式会社 | 半導体装置、及び半導体装置の製造方法 |
WO2023074342A1 (ja) * | 2021-10-25 | 2023-05-04 | 京セラ株式会社 | 電子素子実装用基板、電子装置、および電子モジュール |
Also Published As
Publication number | Publication date |
---|---|
BR112019001967A2 (pt) | 2019-05-07 |
US11784459B2 (en) | 2023-10-10 |
CN109564900B (zh) | 2024-03-08 |
JP2019195096A (ja) | 2019-11-07 |
RU2019106302A (ru) | 2020-09-16 |
JP6577617B2 (ja) | 2019-09-18 |
KR20190034545A (ko) | 2019-04-02 |
WO2018030486A1 (ja) | 2018-02-15 |
US20220094135A1 (en) | 2022-03-24 |
JP6754479B2 (ja) | 2020-09-09 |
CN109564900A (zh) | 2019-04-02 |
JP2019195097A (ja) | 2019-11-07 |
SG11201901073XA (en) | 2019-03-28 |
JP6577616B2 (ja) | 2019-09-18 |
KR102449952B1 (ko) | 2022-10-04 |
JP2018110263A (ja) | 2018-07-12 |
US20190214784A1 (en) | 2019-07-11 |
EP3499559B1 (en) | 2023-11-22 |
JP6305668B1 (ja) | 2018-04-04 |
JP6884823B2 (ja) | 2021-06-09 |
JPWO2018030486A1 (ja) | 2018-08-09 |
EP3499559A4 (en) | 2020-03-18 |
EP3499559A1 (en) | 2019-06-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6577616B2 (ja) | 電気素子搭載用パッケージ、アレイ型パッケージおよび電気装置 | |
JP6893781B2 (ja) | 発光素子搭載用パッケージおよび発光装置 | |
JP6584549B2 (ja) | 発光素子収納用部材、アレイ部材および発光装置 | |
JP2006196565A (ja) | 発光素子収納用パッケージ | |
JP2010034262A (ja) | 発光素子収納用パッケージ | |
US11362484B2 (en) | Light-emitting-element housing member, array member, and light emitting device | |
JP6986453B2 (ja) | 半導体レーザ装置 | |
JP2014157949A (ja) | 配線基板および電子装置 | |
JP4895777B2 (ja) | 発光素子用配線基板ならびに発光装置 | |
JP2022173218A (ja) | 発光素子搭載用基板および発光装置 | |
TWI845964B (zh) | 發光元件搭載用封裝體、陣列型封裝體及電氣裝置 | |
JP2006066630A (ja) | 配線基板および電気装置並びに発光装置 | |
US11978998B2 (en) | Substrate for mounting a light-emitting element, array substrate, and light-emitting device | |
JP7148276B2 (ja) | 発光素子搭載用パッケージおよび発光装置 | |
JP2020017704A (ja) | セラミック回路基板、パッケージおよび電子装置 | |
JP2014207372A (ja) | 配線基板および発光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180315 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180315 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190514 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190710 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190723 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190822 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6577616 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |