JP4492733B2 - 発光装置及び発光装置の製造方法 - Google Patents
発光装置及び発光装置の製造方法 Download PDFInfo
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- JP4492733B2 JP4492733B2 JP2008137472A JP2008137472A JP4492733B2 JP 4492733 B2 JP4492733 B2 JP 4492733B2 JP 2008137472 A JP2008137472 A JP 2008137472A JP 2008137472 A JP2008137472 A JP 2008137472A JP 4492733 B2 JP4492733 B2 JP 4492733B2
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- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01S5/02208—Mountings; Housings characterised by the shape of the housings
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
- H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
- H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
- H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
- H01L2224/48479—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/0001—Technical content checked by a classifier
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
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Description
図1は本発明の第1の実施の形態に係る発光装置の構成を示す側断面図である。図示した発光装置1は、大きくは、発光素子2と、第1の基板3と、第2の基板4と、光取り出し窓5とを備えた構成となっている。
図8は本発明の第2の実施の形態に係る発光装置の構成を示す側断面図である。なお、本発明の第2の実施の形態においては、上記第1の実施の形態で挙げた構成要素と対応する部分に同じ符号を付して説明する。図示した発光装置1は、大きくは、発光素子2と、第1の基板3と、第2の基板4と、光取り出し窓5とを備えた構成となっており、この点は上記第1の実施の形態と同様である。ただし、第2の実施の形態においては、下記の点が第1の実施の形態と異なる。
Claims (10)
- 光を出射する発光素子と、
前記発光素子を実装した第1の基板と、
前記第1の基板との間に前記発光素子の封止空間を形成する第2の基板と、
前記発光素子から出射された光を取り出すための光取り出し窓とを備え、
前記第1の基板及び前記第2の基板のうち、少なくとも一方の基板は、劈開性を有し、かつ前記光取り出し窓が取り付けられる窓取り付け面を劈開面としてなる
発光装置。 - 前記第1の基板に前記発光素子を横向きの姿勢で実装してなる
請求項1記載の発光装置。 - 前記窓取り付け面を有する基板は、Si、GaAs、GaP、InP、AlN、GaNのいずれかの材料からなる
請求項1又は2記載の発光装置。 - 前記光取り出し窓は、前記発光素子から出射された光を直角に反射する反射面を有する
請求項1又は2記載の発光装置。 - 第1の基板に複数の発光素子を実装する工程と、
前記第1の基板に実装される前記複数の発光素子の実装位置に対応して第2の基板に複数の凹部を形成する工程と、
前記発光素子を前記凹部に収容するように前記第1の基板と前記第2の基板を張り合わせて接合する工程と、
前記第1の基板及び前記第2の基板のうち、少なくとも一方の基板を劈開する工程と、
前記少なくとも一方の基板の劈開面に、当該劈開面に開孔している導光孔を塞ぐ状態で光取り出し窓を取り付ける工程と
を有する発光装置の製造方法。 - 前記複数の発光素子が実装された前記第1の基板を短冊状に切り出す工程を含み、
前記短冊状に切り出された前記第1の基板の長手方向に沿って前記第2の基板を劈開する
請求項5記載の発光装置の製造方法。 - 前記第1の基板を短冊状に切り出した後に、前記第1の基板と前記発光素子とをワイヤボンディングによって電気的に接続する工程を有する
請求項6記載の発光装置の製造方法。 - 前記第1の基板と前記第2の基板を張り合わせて接合した後、前記第1の基板及び前記第2の基板の張り合わせ基板を短冊状に劈開し、その後、当該劈開面に開孔している導光孔を塞ぐ状態で、前記張り合わせ基板の劈開面に光取り出し窓を取り付ける
請求項5記載の発光装置の製造方法。 - 前記第1の基板に前記複数の発光素子を実装した後で、かつ前記第1の基板と前記第2の基板を張り合わせる前に、前記第1の基板と前記発光素子とをワイヤボンディングによって電気的に接続する
請求項8記載の発光装置の製造方法。 - 前記導光孔は、前記第2の基板に前記凹部を形成する際に、当該凹部の一部として形成される
請求項5〜9のいずれか1項に記載の発光装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008137472A JP4492733B2 (ja) | 2008-05-27 | 2008-05-27 | 発光装置及び発光装置の製造方法 |
US12/470,744 US20090294789A1 (en) | 2008-05-27 | 2009-05-22 | Light emitting device and method of manufacturing light emitting device |
CN2009101430580A CN101593932B (zh) | 2008-05-27 | 2009-05-26 | 发光装置和发光装置制造方法 |
Applications Claiming Priority (1)
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JP2008137472A JP4492733B2 (ja) | 2008-05-27 | 2008-05-27 | 発光装置及び発光装置の製造方法 |
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JP2009289775A JP2009289775A (ja) | 2009-12-10 |
JP4492733B2 true JP4492733B2 (ja) | 2010-06-30 |
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JP2008137472A Expired - Fee Related JP4492733B2 (ja) | 2008-05-27 | 2008-05-27 | 発光装置及び発光装置の製造方法 |
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US (1) | US20090294789A1 (ja) |
JP (1) | JP4492733B2 (ja) |
CN (1) | CN101593932B (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011198962A (ja) * | 2010-03-18 | 2011-10-06 | Toshiba Corp | 半導体発光素子の製造方法 |
JP2014027179A (ja) * | 2012-07-27 | 2014-02-06 | Harison Toshiba Lighting Corp | 発光装置およびその製造方法、並びにパッケージ部材 |
US9560781B2 (en) * | 2013-07-19 | 2017-01-31 | Materion Corporation | Metal cap assembly for optical communications |
DE102014202220B3 (de) * | 2013-12-03 | 2015-05-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung eines Deckelsubstrats und gehäustes strahlungsemittierendes Bauelement |
JP6524632B2 (ja) * | 2014-09-30 | 2019-06-05 | 日亜化学工業株式会社 | 半導体レーザ装置及びその製造方法 |
US11431146B2 (en) * | 2015-03-27 | 2022-08-30 | Jabil Inc. | Chip on submount module |
DE102015208704A1 (de) * | 2015-05-11 | 2016-11-17 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
DE102015114292A1 (de) * | 2015-08-27 | 2017-03-02 | Osram Opto Semiconductors Gmbh | Laserbauelement und Verfahren zu seiner Herstellung |
US10727144B2 (en) | 2016-03-02 | 2020-07-28 | Sny Corporation | Light emitting apparatus and method of manufacturing light emitting apparatus |
WO2018030486A1 (ja) * | 2016-08-10 | 2018-02-15 | 京セラ株式会社 | 電気素子搭載用パッケージ、アレイ型パッケージおよび電気装置 |
JP2018190864A (ja) * | 2017-05-09 | 2018-11-29 | ウシオ電機株式会社 | 半導体レーザ装置 |
DE102017110317A1 (de) | 2017-05-12 | 2018-11-15 | Osram Opto Semiconductors Gmbh | Abdeckung für ein optoelektronisches Bauelement und optoelektronisches Bauteil |
DE102017130131B4 (de) | 2017-12-15 | 2021-08-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen und optoelektronisches Halbleiterbauteil |
DE102020114371A1 (de) * | 2020-05-28 | 2021-12-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements |
DE102020215033A1 (de) | 2020-11-30 | 2022-06-02 | Robert Bosch Gesellschaft mit beschränkter Haftung | Laserdiodenvorrichtung |
JP2023107471A (ja) * | 2022-01-24 | 2023-08-03 | ヌヴォトンテクノロジージャパン株式会社 | 半導体レーザ装置及び半導体レーザ素子の製造方法 |
DE102022108870A1 (de) | 2022-04-12 | 2023-10-12 | Ams-Osram International Gmbh | Verfahren zur herstellung eines optoelektronischen bauteils sowie optoelektronischer bauteilverbund |
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JP2002084027A (ja) * | 2000-09-07 | 2002-03-22 | Sony Corp | 半導体発光装置 |
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2008
- 2008-05-27 JP JP2008137472A patent/JP4492733B2/ja not_active Expired - Fee Related
-
2009
- 2009-05-22 US US12/470,744 patent/US20090294789A1/en not_active Abandoned
- 2009-05-26 CN CN2009101430580A patent/CN101593932B/zh not_active Expired - Fee Related
Patent Citations (5)
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JPH05129712A (ja) * | 1991-10-30 | 1993-05-25 | Rohm Co Ltd | パツケージ型半導体レーザ装置 |
JPH09307122A (ja) * | 1996-05-17 | 1997-11-28 | Shinko Electric Ind Co Ltd | 光素子モジュール |
JP2005094019A (ja) * | 2003-09-19 | 2005-04-07 | Agilent Technol Inc | 光電子デバイスのウェハレベルパッケージおよびパッケージング方法 |
JP2005191529A (ja) * | 2003-09-19 | 2005-07-14 | Agilent Technol Inc | 反射鏡及び位置合わせポストを有する光デバイスパッケージ |
JP2008009098A (ja) * | 2006-06-29 | 2008-01-17 | Namiki Precision Jewel Co Ltd | 光接続装置と実装方法 |
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JP2009289775A (ja) | 2009-12-10 |
CN101593932A (zh) | 2009-12-02 |
US20090294789A1 (en) | 2009-12-03 |
CN101593932B (zh) | 2011-05-25 |
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