CN114026752B - 半导体激光装置 - Google Patents
半导体激光装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 238000007789 sealing Methods 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 abstract description 17
- 239000000463 material Substances 0.000 abstract description 5
- 229910000679 solder Inorganic materials 0.000 description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 11
- 230000003071 parasitic effect Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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Abstract
本发明的半导体激光装置具备:作为基体材料的管座(1);LD次基台(2),设置有表面电极(20a、20b),并与管座(1)的表面接合;LD芯片(4),配置于表面电极(20a),并与表面电极(20b)连接;以及引线(3a、3b),经由设置于LD次基台(2)的通孔(2c、2d)内的埋入层(21a、21b)而与表面电极(20a、20b)电连接,并通过封接部件(10a、10b)固定于设置于管座(1)的孔(1a、1b),在管座(1)与LD次基台(2)的接合面侧的、封接部(10a、10b)或LD次基台(2)的引线(3a、3b)与埋入层(21a、21b)的连接部的周围设置有槽部(10ad、10bd),由此得到良好的调制光波形。
Description
技术领域
本申请涉及半导体激光装置。
背景技术
在以往的半导体激光装置中,激光二极管(Laser Diode:以下简称为LD)芯片安装在从管座(stem)的金属基体垂直地突出的突起部的散热片(例如,参照专利文献1)。另外,已知在管座上具备平行地放射激光的半导体激光元件和次基台的半导体激光装置(例如,参照专利文献2)等。
以往的半导体激光装置被输入用于驱动LD芯片的DC(Direct Current)偏压和调制信号。调制信号经由引线、金线以及次基台而输入到LD芯片,LD芯片以追随矩形的调制信号的接通断开的方式接通断开激光。此时,即使输入于LD芯片的信号是理想的矩形波,由于引线以及金属线的寄生电感而导致阻抗不匹配变大,从LD芯片得到的激光的调制光波形的上升时间以及下降时间变长,导致波形劣化。若波形的劣化严重,则在接收侧无法区分光信号的接通断开,而使信号的解调变得困难。特别是,调制频率越高阻抗不匹配的影响越大,光波形越大幅劣化。另一方面,虽然光调制度受半导体激光芯片的缓和振动的影响,而在频率fr变大,但在比其更高调制频率下,光调制度变小。若将光调制度比低频调制时降低1.5dB时的频率设为fc,将调制光波形从10%上升到90%所需的时间设为tr,将从90%下降到10%所需的时间设为tf,则fc、tr以及tf的关系由tr=tf=0.35/fc赋予,由此fc越大tr、tf越小,能够得到良好的调制光波形。为了改善调制光波形,降低寄生电感来抑制阻抗不匹配,提高fc是有效的。
专利文献1:日本特开2004-342882号公报(段落0026,图1)
专利文献2:日本特开2008-198934号公报(段落0022,图1)
为了减少寄生电感,有效的是缩短引线以及金线,但在专利文献1以及专利文献2所示的以往构造中,需要将引线以及金属线延伸到芯片位置,而存在长引线以及金线使调制光波形劣化的问题。另外,若使LD芯片的位置接近管座上表面则能够缩短引线以及金属线,但在使用通常的半导体激光装置的组装装置的情况下,由于在安装芯片时芯片吸附用夹头与管座干扰,所以存在缺乏实现性的问题。
发明内容
本申请公开了用于解决上述那样的课题的技术,其目的在于提供一种能够减少金属线的使用,得到良好的调制光波形,并且芯片的安装容易的半导体激光装置。
本申请所公开的半导体激光装置的特征在于,具备:作为基体的管座;次基台,在表面设置有电极,并与上述管座接合;半导体激光元件,与上述电极接合;以及引线,与上述电极连接,并被封接部件固定于设置于上述管座的孔,在上述管座与上述次基台的接合面侧的、上述封接部件或上述次基台的上述引线的周围设置有槽部。
根据本申请,通过减少金属线的使用,能够减少寄生电感,而得到良好的调制光波形,并且能够容易地安装芯片。
附图说明
图1是表示实施方式1的半导体激光装置的结构的俯视图。
图2是表示实施方式1的半导体激光装置的结构的剖视图。
图3是表示实施方式1的半导体激光装置的结构的剖视图。
图4是用于说明实施方式1的半导体激光装置所使用的次基台的安装工序的图。
图5是表示实施方式2的半导体激光装置的结构的俯视图。
图6是表示实施方式2的半导体激光装置的结构的剖视图。
图7是表示实施方式2的半导体激光装置的结构的俯视图。
图8是表示实施方式2的半导体激光装置的结构的剖视图。
图9是表示实施方式3的半导体激光装置的结构的俯视图。
图10是表示实施方式3的半导体激光装置的结构的剖视图。
图11是表示实施方式3的半导体激光装置的结构的俯视图。
图12是表示实施方式3的半导体激光装置的结构的剖视图。
具体实施方式
实施方式1
图1是表示本申请的实施方式1所涉及的半导体激光装置101的结构的俯视图。图2是图1的AA向视剖视图,图3是图1的BB剖视图。如图1至图3所示,半导体激光装置101由如下部件构成:作为基体材料的管座1;LD次基台2,设置于管座1的表面;引线3a、3b,分别固定于开设在管座1的孔1a、1b,分别经由作为通孔2c、2d的导电层的埋入层21a、21b以及背面电极22a、22b而与LD次基台2的表面电极20a、20b电连接;作为半导体激光元件的LD芯片4,与LD次基台2的表面电极20a的表面接合;金线5,将LD芯片4的表电极与LD次基台2的表面电极20b连接;以及反射镜6,反射从LD芯片4射出的激光。
管座1是半导体激光装置101的基体材料,且开设有用于供引线3a、3b分别通过的孔1a、1b,使用玻璃等封接部件10a、10b将引线3a、3b固定于孔1a、1b的内部。
LD次基台2使用焊料被安装于管座1之上,在表面电极20a之上搭载有LD芯片4,LD芯片4的表面电极与表面电极20b通过金线5连接。LD次基台2的表面电极20a、20b分别经由通孔2c、2d的埋入层21a、21b与背面电极22a、22b连接。
引线3a、3b使用玻璃等封接部件10a、10b分别被固定于管座1的孔1a、1b的内部。引线3a、3b的上端面与管座1的上表面处于同一平面,使用焊料分别与LD次基台2的背面电极22a、22b连接,并且经由埋入层21a、21b与表面电极20a、20b连接。
LD芯片4使用焊料等并经由LD芯片4的背面电极接合于LD次基台2的表面电极20a之上。LD芯片4的表面电极通过金线5与LD次基台2的表面电极20b连接。
反射镜6搭载于管座1的上表面,通过反射从LD芯片4射出的激光,而向垂直于管座1上表面的方向引出该激光。反射镜也可以为棱镜等光学部件,也可以为形成有高反射膜的光电二极管(Photodiode:以下简称为PD)芯片。
这里,对本申请的半导体激光装置101的构造上的特征进行说明。对于半导体激光装置101而言,特征在于,分别经由通孔2c、2d的埋入层21a、21b,将与LD芯片4连接的LD次基台2的表面电极20a、20b和背面电极22a、22b电连接,并且在固定与背面电极22a、22b连接的引线3a、3b的管座1的孔1a、1b中,在管座1的与LD次基台2对置的对置侧分别设置有锪孔部1az、1bz,在锪孔部1az、1bz中的封接部件10a、10b的与LD次基台2对置的对置面,在引线3a、3b的周围设置有槽部10ad、10bd。另外,在LD次基台2的与封接部件10a、10b对置的区域2a、2b未形成有背面电极22、22a、22b。
图4是表示实施方式1的半导体激光装置101所使用的LD次基台2的结构的仰视图(图4的(a))以及固定了引线3a、3b的管座1的剖视图(图4的(b))。在将LD次基台2安装于管座1的制造工序中,引线3a、3b分别与背面电极22a、22b、以及管座1与背面电极22,使用焊料而接合。
此时,若背面电极22a、22b与引线3a、3b错位、以及用于接合的焊料的量变多,则焊料大幅扩展而与管座1接触,导致短路不良。为了防止这样的不良,需要严格地控制背面电极22a、22b与引线3a、3b的对位以及焊料的量,使得制造困难。在本申请中,作为不产生这样的短路不良而容易制造的构造,在引线3a、3b周围的封接部件10a、10b设置有槽部10ad、10bd。
根据该结构,能够减少在将LD次基台2接合到管座1时所扩展的焊料与管座1接触的不良。此外,也可以通过在LD次基台2的背面侧,在与引线连接的背面电极22a、22b的周围设置槽部,来抑制焊料的扩展。另外,引线上端部也可以不与管座1上表面处于同一平面,而是比管座上表面降低与焊料的厚度相当的量。
如以上那样,根据本实施方式1所涉及的半导体激光装置101,具备:作为基体材料的管座1;LD次基台2,设置有表面电极20a、20b,并与管座1的表面接合;LD芯片4,与表面电极20a接合,并与表面电极20b连接;以及引线3a、3b,经由设置于LD次基台2的通孔2c、2d内的埋入层21a、21b而与表面电极20a、20b电连接,并通过封接部件10a、10b固定于设置于管座1的孔1a、1b,在管座1与LD次基台2的接合面侧的、封接部件10a、10b或LD次基台2的引线3a、3b与埋入层21a、21b的连接部的周围设置有槽部10ad、10bd,因此不需要如以往的半导体激光装置那样使用寄生电感大的长引线等,通过减少金属线的使用,能够改善调制光波形,能够得到良好的调制光波形。另外,能够容易地安装芯片。
实施方式2
在实施方式1中,虽然将表面电极20a、20b与引线3a、3b经由通孔2c、2d内的埋入层21a、21b而连接,但在实施方式2中,对使引线3a、3b与表面电极20a、20b直接接触而连接的情况进行说明。
图5是表示本申请的实施方式2所涉及的半导体激光装置102的结构的俯视图。图6是图5的AA向视剖视图。如图5以及图6所示,在半导体激光装置102中,引线3a、3b构成为,比管座1的表面突出,不经由通孔的埋入层,而是与削去在实施方式1中使用的LD次基台2的两处角部而成的LD次基台7的表面电极70a、70b分别直接接触并通过焊料电连接。对于引线70a、70b的上端部,也可以根据需要而进行扩大、变细,以便容易附着焊料。此外,也可以代替焊料,而使用金线或金带。
另外,在管座1与LD次基台7的接合面侧的封接部件10a、10b或LD次基台7的引线3a、3b的周围设置槽部。对于实施方式2所涉及的半导体激光装置102的其他结构,与实施方式1的半导体激光装置101同样,对对应的部分标注相同的附图标记并省略其说明。
如以上那样,根据本实施方式2所涉及的半导体激光装置102,具备:作为基体材料的管座1;LD次基台7,设置有表面电极70a、70b,并与管座1的表面接合;LD芯片4,配置于表面电极70a,并与表面电极70b连接;以及引线3a、3b,与表面电极70a、70b接触而电接合,并通过封接部件10a、10b固定于设置于管座1的孔1a、1b,在管座1与LD次基台7的接合面侧的、封接部件10a、10b或LD次基台7的引线3a、3b的周围设置有槽部10ad、10bd,因此能够减少如以往的半导体激光装置那样寄生电感大的金属线的使用,能够改善调制光波形,能够得到良好的调制光波形。另外,能够容易地安装芯片。
此外,本实施方式2所涉及的半导体激光装置102的LD次基台7的形状并不局限于此,也可以使用削去两处短边而成的LD次基台7。图7是表示本申请的实施方式2所涉及的半导体激光装置102的其他结构的俯视图。图8是图7的AA向视剖视图。在该情况下,也能够得到与上述实施方式2同样的效果。
实施方式3
在实施方式3中,对搭载有用于监视从LD芯片4射出的激光的输出的PD芯片的情况进行说明。
图9是表示本申请的实施方式3所涉及的半导体激光装置103的结构的俯视图。图10是图9的BB向视剖视图。
在通常的半导体激光装置中,LD芯片设置为不使用反射镜而是向相对于管座垂直的方向射出激光,作为监视光输出的方法,使从LD芯片泄漏的光入射到安装于与LD芯片垂直的方向(与管座平行的方向)的PD芯片。但是,在实施方式1中,难以在LD芯片4的背面侧设置垂直设置PD芯片的空间。
为此,如图9以及图10所示,在半导体激光装置103中,将作为光电二极管元件的PD芯片9和PD次基台8设置于反射镜6的后方侧,由PD芯片9接收透过了反射镜6的从LD芯片4射出的激光的一部分。从接收了一部分激光的PD芯片9,经由金线13、中继基板12的表面电极11、金线14以及作为LD次基台2的表面电极的引绕图案20c向引线3c发送电信号。对于实施方式3所涉及的半导体激光装置103的其他结构,与实施方式1的半导体激光装置101同样,对对应的部分标注相同的附图标记并省略其说明。
如以上那样,根据本实施方式3所涉及的半导体激光装置103,具备PD芯片9,该PD芯片9设置于反射镜6的后方,并接收透过了反射镜6的激光,将PD芯片9经由LD次基台2的表面电极20c,并经由通孔2e的埋入层21c以及背面电极22c而与引线3c电连接,在管座1与LD次基台2的接合面侧的封接部件10c或LD次基台2的引线3c与埋入层21c的连接部的周围设置有槽部10cd,因此通过PD芯片检测从LD芯片射出的激光,即使在监视LD芯片的激光的输出时,也不需要如以往的半导体激光装置那样使用寄生电感大的长引线等,通过减少金属线的使用,能够改善调制光波形,能够得到良好的调制光波形。另外,能够容易地安装芯片。
此外,在本实施方式3所涉及的半导体激光装置103中,虽然将中继基板12的表面电极11与引绕图案20c通过金线14连接,但并不局限于此。也可以将中继基板和LD次基台设为一体,而形成中继基板的表面电极和引绕图案(图11、图12)。在该情况下,也能够得到与上述实施方式3同样的效果。
本申请中虽然记载了各种例示的实施方式以及实施例,但一个或多个实施方式所记载的各种特征、形态以及功能并不限定于特定的实施方式的应用,也可以单独或以各种组合应用于实施方式。因此,在本申请说明书所公开的技术范围内能够想到未例示的无数的变形例。例如,包括对至少一个构成要素进行变形的情况、追加的情况或省略的情况,还包括抽取至少一个构成要素并与其他实施方式的构成要素组合的情况。
附图标记说明
1...管座;1a、1b...孔;2、7...LD次基台;2c、2d...通孔;3a、3b...引线;4...LD芯片;10a、10b...封接部件;10ad、10bd...槽部;20a、20b...表面电极;21a、21b...埋入层;22a、22b...背面电极;70a、70b...表面电极;101、102、103...半导体激光装置。
Claims (3)
1.一种半导体激光装置,其特征在于,
所述半导体激光装置具备:
作为基体的管座;
次基台,设置有表面电极以及背面电极,并且所述背面电极与所述管座接合;
半导体激光元件,与所述表面电极接合;以及
引线,与所述背面电极连接,并被封接部件固定于设置于所述管座的孔,且经由所述背面电极以及设置于所述次基台的孔内的金属制的埋入层而与所述表面电极电连接,
在所述管座与所述次基台的接合面侧的、所述封接部件或所述次基台的所述引线的周围设置有槽部。
2.一种半导体激光装置,其特征在于,
所述半导体激光装置具备:
作为基体的管座;
次基台,设置有表面电极以及背面电极,并且所述背面电极与所述管座接合;
半导体激光元件,与所述表面电极接合;以及
引线,与所述表面电极连接,并被封接部件固定于设置于所述管座的孔,且与所述次基台的所述表面电极直接接触而电连接,
在所述管座与所述次基台的接合面侧的、所述封接部件或所述次基台的所述引线的周围设置有槽部。
3.根据权利要求1或2所述的半导体激光装置,其特征在于,
所述半导体激光装置具备:
反射镜,反射从所述半导体激光元件射出的激光;和
光电二极管元件,设置于所述反射镜的后方,接收透过了所述反射镜的所述激光,
所述光电二极管元件经由所述电极与所述引线连接。
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US20220224071A1 (en) | 2022-07-14 |
WO2021001914A1 (ja) | 2021-01-07 |
US11973312B2 (en) | 2024-04-30 |
JP7209837B2 (ja) | 2023-01-20 |
TW202103399A (zh) | 2021-01-16 |
TWI730826B (zh) | 2021-06-11 |
CN114026752A (zh) | 2022-02-08 |
JPWO2021001914A1 (zh) | 2021-01-07 |
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