JP6400108B2 - 高周波モジュール - Google Patents
高周波モジュール Download PDFInfo
- Publication number
- JP6400108B2 JP6400108B2 JP2016545541A JP2016545541A JP6400108B2 JP 6400108 B2 JP6400108 B2 JP 6400108B2 JP 2016545541 A JP2016545541 A JP 2016545541A JP 2016545541 A JP2016545541 A JP 2016545541A JP 6400108 B2 JP6400108 B2 JP 6400108B2
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- high frequency
- frequency integrated
- ground layer
- frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims description 53
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 230000005855 radiation Effects 0.000 claims description 13
- 230000005684 electric field Effects 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 description 25
- 239000011162 core material Substances 0.000 description 13
- 239000004020 conductor Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 240000004050 Pentaglottis sempervirens Species 0.000 description 1
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/02—Arrangements for de-icing; Arrangements for drying-out ; Arrangements for cooling; Arrangements for preventing corrosion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/16—Resonant antennas with feed intermediate between the extremities of the antenna, e.g. centre-fed dipole
- H01Q9/28—Conical, cylindrical, cage, strip, gauze, or like elements having an extended radiating surface; Elements comprising two conical surfaces having collinear axes and adjacent apices and fed by two-conductor transmission lines
- H01Q9/285—Planar dipole
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/0204—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
- H05K1/0206—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate by printed thermal vias
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/141—Analog devices
- H01L2924/1423—Monolithic Microwave Integrated Circuit [MMIC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Thermal Sciences (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Description
以下、図面を参照しながらこの発明の実施の形態1に係る高周波モジュールについて説明する。図1は、この発明の実施の形態1に係る高周波モジュールの断面図を示す。高周波モジュール1は、誘電体多層基板2上に任意の数の高周波集積回路3(FET:Field Effect Transistor,MMIC:Monolithic Microwave Integrated Circuitなど)および入力コネクタ4が搭載されている。入力信号および制御信号は、入力コネクタ4を介して高周波モジュール1へ入力される。誘電体多層基板2裏面には、アンテナ素子7が形成されている。アンテナ素子7は、高周波集積回路3により増幅されたマイクロ波等の高周波信号を、空間に放射する。アンテナ素子7から放射される高周波信号の電力(高周波電力)の評価のために、アンテナ素子7の入力端子の直前に、切替スイッチ付同軸コネクタ8が配置されている。
ここで、カットオフ周波数fc=c/λc、c=光速。
この発明の実施の形態2に係る高周波モジュールについて、図を用いて説明する。図4は、この発明の実施の形態2に係る高周波モジュールの断面図を示す。図4において、図1〜図3と同一若しくは同等の構成要素には同一符号を付し、その説明を省略する。この発明の実施の形態2は、この発明の実施の形態1における誘電体多層基板2内に、アルミコア材などのメタルコア材12を埋め込んだものである。メタルコア材12は、グラウンドビア2dによってグラウンドパターン(接地層)2aに電気的且つ熱的に接続されている。
この発明の実施の形態3に係る高周波モジュールについて、図を用いて説明する。図5は、この発明の実施の形態3に係る高周波モジュールの断面図を示す。図5において、図1〜図3と同一若しくは同等の構成要素には同一符号を付し、その説明を省略する。この発明の実施の形態3は、この発明の実施の形態1におけるカットオフブロック5に放熱フィン13を形成したものである。
この発明の実施の形態4に係る高周波モジュールについて、図を用いて説明する。図6は、この発明の実施の形態4に係る高周波モジュールの断面図を示す。図6において、図1〜図3と同一若しくは同等の構成要素には同一符号を付し、その説明を省略する。この発明の実施の形態4は、この発明の実施の形態1におけるカットオフブロック5に水冷用ヒートパイプ14を形成したものである。
この発明の実施の形態5に係る高周波モジュールについて、図を用いて説明する。図7は、この発明の実施の形態5に係る高周波モジュールの断面図を示す。図7において、図1〜図3と同一若しくは同等の構成要素には同一符号を付し、その説明を省略する。この発明の実施の形態5は、この発明の実施の形態1において、高周波集積回路3のパッケージを上下逆に実装した構造とし、カットオフブロック5と高周波集積回路3を直接接触させたものである。伝熱量を増大させるためには、高周波集積回路3のパッケージとカットオフブロック5の接触性を良くする必要がある。高周波集積回路3のパッケージへねじ加工処理を施し、カットオフブロック5を誘電体多層基板2に取り付ける。このように、取り付けた後、ねじ18を用いて、高周波集積回路3のパッケージとカットオフブロック5の接触性を向上させる。具体的には、カットオフブロック5側から通したねじ18を用いて、高周波集積回路3のパッケージに設けたねじ加工部と嵌合させ、カットオフブロック5側に引き寄せることにより接触性を高める。ねじ18は、Z方向において挿入されている。
この発明の実施の形態6に係る高周波モジュールについて、図を用いて説明する。図8は、この発明の実施の形態6に係る高周波モジュールの断面図を示す。図8において、図1〜図3と同一若しくは同等の構成要素には同一符号を付し、その説明を省略する。この発明の実施の形態6は、この発明の実施の形態1に加えて、アンテナ素子7も放熱経路とするものである。
Claims (8)
- 接地層を有し、発熱素子である高周波集積回路を前記接地層に接触して実装した誘電体多層基板と、
前記誘電体多層基板の接地層に接触している立壁部及びこれを覆う蓋部から構成され、内部に前記高周波集積回路を収納し、前記高周波集積回路が使用する高周波信号の周波数においてカットオフ特性を有する空洞部を設け、前記接地層を通じて伝熱される前記高周波集積回路で発熱した熱を放熱するカットオフブロックと、を備え、
前記高周波集積回路及び前記カットオフブロックは、前記誘電体多層基板の一方の面に実装され、
前記誘電体多層基板の他方の面に設けられ、前記誘電体多層基板を介して電熱される前記高周波集積回路で発熱した熱を放熱する平面アンテナで構成されたアンテナ素子を有し、
前記アンテナ素子の電界強度の零点を前記接地層に接続した、高周波モジュール。 - 接地層を有し、発熱素子である高周波集積回路を前記接地層に接触して実装した誘電体多層基板と、
前記誘電体多層基板の接地層に接触している立壁部及びこれを覆う蓋部から構成され、内部に前記高周波集積回路を収納し、前記高周波集積回路が使用する高周波信号の周波数においてカットオフ特性を有する空洞部を設けたカットオフブロックと、を備え、
前記高周波集積回路及び前記カットオフブロックは、前記誘電体多層基板の一方の面に実装され、前記誘電体多層基板の他方の面に前記高周波集積回路に接続されたアンテナ素子を具備し、
前記アンテナ素子は平面アンテナであって、前記アンテナ素子の電界強度の零点を前記接地層に接続した高周波モジュール。 - 前記接地層の一部はメタルコアであって、このメタルコアに前記高周波集積回路が接触して実装されている請求項2に記載の高周波モジュール。
- 前記接地層は、前記誘電体多層基板の誘電体層を跨いで複数形成され、前記誘電体層を跨いで形成された複数の前記接地層は、前記誘電体層に形成された導電性のグラウンドビアにてそれぞれ接続されている請求項2または3に記載の高周波モジュール。
- 前記グラウンドビアは、前記高周波集積回路の周囲に複数形成されている請求項4に記載の高周波モジュール。
- 前記カットオフブロックの蓋部に放熱フィンを立設した請求項2から5のいずれか1項に記載の高周波モジュール。
- 前記カットオフブロックに放熱ヒートパイプを内設した請求項2から5のいずれか1項に記載の高周波モジュール。
- 前記アンテナ素子の電界強度の零点を前記接地層に接続した請求項3から7のいずれか1項に記載の高周波モジュール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014171058 | 2014-08-26 | ||
JP2014171058 | 2014-08-26 | ||
PCT/JP2015/073829 WO2016031807A1 (ja) | 2014-08-26 | 2015-08-25 | 高周波モジュール |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018163012A Division JP6671435B2 (ja) | 2014-08-26 | 2018-08-31 | 高周波モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2016031807A1 JPWO2016031807A1 (ja) | 2017-06-01 |
JP6400108B2 true JP6400108B2 (ja) | 2018-10-03 |
Family
ID=55399694
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016545541A Active JP6400108B2 (ja) | 2014-08-26 | 2015-08-25 | 高周波モジュール |
JP2018163012A Active JP6671435B2 (ja) | 2014-08-26 | 2018-08-31 | 高周波モジュール |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018163012A Active JP6671435B2 (ja) | 2014-08-26 | 2018-08-31 | 高周波モジュール |
Country Status (5)
Country | Link |
---|---|
US (2) | US10109552B2 (ja) |
EP (1) | EP3188229A4 (ja) |
JP (2) | JP6400108B2 (ja) |
CN (2) | CN106796924B (ja) |
WO (1) | WO2016031807A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11611361B2 (en) | 2019-10-02 | 2023-03-21 | Murata Manufacturing Co., Ltd. | Communication module |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017209761A1 (en) * | 2016-06-03 | 2017-12-07 | Intel IP Corporation | Wireless module with antenna package and cap package |
JP6725378B2 (ja) * | 2016-09-15 | 2020-07-15 | 株式会社東芝 | アンテナモジュール |
US10020249B2 (en) * | 2016-10-21 | 2018-07-10 | Ciena Corporation | Electronic device package using a substrate side coaxial interface |
JP6449837B2 (ja) * | 2016-12-01 | 2019-01-09 | 太陽誘電株式会社 | 無線モジュール及び無線モジュールの製造方法 |
KR102617349B1 (ko) * | 2016-12-02 | 2023-12-26 | 삼성전자주식회사 | 인쇄회로기판, 및 이를 가지는 솔리드 스테이트 드라이브 장치 |
CN106598347B (zh) * | 2017-01-16 | 2023-04-28 | 宸鸿科技(厦门)有限公司 | 力感测装置及oled显示装置 |
JP6981432B2 (ja) * | 2017-01-18 | 2021-12-15 | Tdk株式会社 | 電子部品搭載パッケージ |
JP6905438B2 (ja) * | 2017-09-22 | 2021-07-21 | 株式会社フジクラ | 無線通信モジュール |
US11509037B2 (en) | 2018-05-29 | 2022-11-22 | Intel Corporation | Integrated circuit packages, antenna modules, and communication devices |
JP7115568B2 (ja) * | 2019-01-23 | 2022-08-09 | 株式会社村田製作所 | アンテナモジュール及び通信装置 |
JP7124969B2 (ja) * | 2019-06-27 | 2022-08-24 | 株式会社村田製作所 | 電子部品モジュール |
DE102019219478A1 (de) | 2019-12-12 | 2021-06-17 | Continental Automotive Gmbh | Modular erweiterbares elektronisches steuergerät |
CN110994116B (zh) * | 2019-12-24 | 2022-02-11 | 瑞声精密制造科技(常州)有限公司 | 一种天线的散热结构和天线组件 |
KR20210100443A (ko) | 2020-02-06 | 2021-08-17 | 삼성전자주식회사 | 유전 시트가 부착된 안테나 모듈을 포함하는 전자 장치 |
JP2021129059A (ja) * | 2020-02-14 | 2021-09-02 | シャープ株式会社 | 電子機器 |
JP7278233B2 (ja) * | 2020-03-19 | 2023-05-19 | 株式会社ソニー・インタラクティブエンタテインメント | 電子機器 |
JP7134385B2 (ja) * | 2020-07-31 | 2022-09-09 | 三菱電機株式会社 | アクティブフェーズドアレーアンテナ |
CN111987405B (zh) * | 2020-09-11 | 2021-10-22 | 中国航空工业集团公司雷华电子技术研究所 | 一种雷达天线散热结构 |
EP4315500A1 (en) * | 2021-04-01 | 2024-02-07 | Hughes Network Systems, LLC | Cavity resonance suppression using discrete thermal pedestals in active electronically scanned array |
EP4315501A1 (en) * | 2021-04-01 | 2024-02-07 | Hughes Network Systems, LLC | Cavity resonance suppression using thermal pedestal arrangements in active electronically scanned array |
US20220321239A1 (en) * | 2021-04-01 | 2022-10-06 | Hughes Network Systems, Llc | Cavity Resonance Suppression Using Discrete Thermal Pedestals in Active Electronically Scanned Array |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63149544A (ja) * | 1986-12-12 | 1988-06-22 | Kobe Steel Ltd | オプチカルフアイバ式自動螢光磁粉探傷用の被検査部品取付装置 |
JPS63149544U (ja) * | 1987-03-23 | 1988-10-03 | ||
JPH01154607A (ja) * | 1987-12-11 | 1989-06-16 | Fujitsu Ltd | 送受信装置 |
JPH0760952B2 (ja) | 1990-08-03 | 1995-06-28 | 三菱電機株式会社 | マイクロ波回路装置 |
JPH0536896U (ja) * | 1991-10-17 | 1993-05-18 | 株式会社アドバンテスト | 半導体icの冷却構造 |
JPH06140538A (ja) * | 1992-10-28 | 1994-05-20 | Nec Corp | クォドフラットパッケージ型ic |
US5459368A (en) * | 1993-08-06 | 1995-10-17 | Matsushita Electric Industrial Co., Ltd. | Surface acoustic wave device mounted module |
JPH07263887A (ja) * | 1994-03-18 | 1995-10-13 | Fujitsu Ltd | マイクロ波回路装置 |
JPH09102579A (ja) | 1995-10-03 | 1997-04-15 | Murata Mfg Co Ltd | 高周波モジュ−ル |
JPH10125830A (ja) * | 1996-10-24 | 1998-05-15 | Hitachi Ltd | 高周波モジュールおよびその製造方法 |
JP3982876B2 (ja) * | 1997-06-30 | 2007-09-26 | 沖電気工業株式会社 | 弾性表面波装置 |
JP2000228452A (ja) * | 1999-02-05 | 2000-08-15 | Ibiden Co Ltd | 電子部品搭載用基板 |
JP2000236045A (ja) | 1999-02-16 | 2000-08-29 | Mitsubishi Electric Corp | 高周波パッケージ |
JP3711332B2 (ja) * | 2000-08-01 | 2005-11-02 | 三菱電機株式会社 | 電子機器 |
US6870505B2 (en) * | 2002-07-01 | 2005-03-22 | Integral Technologies, Inc. | Multi-segmented planar antenna with built-in ground plane |
JP3830430B2 (ja) | 2002-07-09 | 2006-10-04 | 京セラ株式会社 | 高周波回路用パッケージ蓋体及びその製造方法並びにこれを用いた高周波回路用パッケージ |
US6965072B2 (en) * | 2003-02-07 | 2005-11-15 | Nokia Corporation | Shielding arrangement |
JP4634837B2 (ja) * | 2004-03-26 | 2011-02-16 | 三菱電機株式会社 | 高周波パッケージ、送受信モジュールおよび無線装置 |
JP4684730B2 (ja) * | 2004-04-30 | 2011-05-18 | シャープ株式会社 | 高周波半導体装置、送信装置および受信装置 |
JP2007116217A (ja) | 2005-10-18 | 2007-05-10 | Hitachi Ltd | ミリ波レーダ装置およびそれを用いたミリ波レーダシステム |
CN101568687B (zh) * | 2006-12-20 | 2012-06-27 | 巴斯夫欧洲公司 | 纸施胶剂混合物 |
JP2010520132A (ja) * | 2007-03-03 | 2010-06-10 | チョイ、キュン−ドン | スライドドアの押圧保護装置、ロック装置及びスクリーンドアシステム |
EP2284881B1 (en) * | 2008-05-12 | 2021-02-17 | Mitsubishi Electric Corporation | High frequency module including a storing case and a plurality of high frequency circuits |
US8706049B2 (en) * | 2008-12-31 | 2014-04-22 | Intel Corporation | Platform integrated phased array transmit/receive module |
JP2011165931A (ja) | 2010-02-10 | 2011-08-25 | Mitsubishi Electric Corp | 高周波回路モジュール |
JP2011199842A (ja) * | 2010-02-16 | 2011-10-06 | Renesas Electronics Corp | 平面アンテナ装置 |
JP2013211368A (ja) * | 2012-03-30 | 2013-10-10 | Mitsubishi Electric Corp | パッケージ |
JP2013254925A (ja) * | 2012-05-10 | 2013-12-19 | Nippon Seiki Co Ltd | 電子回路装置 |
JP5550159B1 (ja) * | 2013-09-12 | 2014-07-16 | 太陽誘電株式会社 | 回路モジュール及びその製造方法 |
JP6163421B2 (ja) * | 2013-12-13 | 2017-07-12 | 株式会社東芝 | 半導体装置、および、半導体装置の製造方法 |
JP6091460B2 (ja) * | 2014-04-11 | 2017-03-08 | シマネ益田電子株式会社 | 電子部品の製造方法 |
-
2015
- 2015-08-25 US US15/504,240 patent/US10109552B2/en active Active
- 2015-08-25 CN CN201580046563.7A patent/CN106796924B/zh active Active
- 2015-08-25 CN CN201910137230.5A patent/CN109616455A/zh not_active Withdrawn
- 2015-08-25 EP EP15835438.1A patent/EP3188229A4/en not_active Withdrawn
- 2015-08-25 WO PCT/JP2015/073829 patent/WO2016031807A1/ja active Application Filing
- 2015-08-25 JP JP2016545541A patent/JP6400108B2/ja active Active
-
2018
- 2018-08-31 JP JP2018163012A patent/JP6671435B2/ja active Active
- 2018-09-17 US US16/132,956 patent/US10468323B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11611361B2 (en) | 2019-10-02 | 2023-03-21 | Murata Manufacturing Co., Ltd. | Communication module |
Also Published As
Publication number | Publication date |
---|---|
JPWO2016031807A1 (ja) | 2017-06-01 |
JP2019009457A (ja) | 2019-01-17 |
US20170250120A1 (en) | 2017-08-31 |
WO2016031807A1 (ja) | 2016-03-03 |
CN106796924B (zh) | 2019-02-26 |
US20190019738A1 (en) | 2019-01-17 |
EP3188229A4 (en) | 2018-04-25 |
US10468323B2 (en) | 2019-11-05 |
EP3188229A1 (en) | 2017-07-05 |
US10109552B2 (en) | 2018-10-23 |
JP6671435B2 (ja) | 2020-03-25 |
CN109616455A (zh) | 2019-04-12 |
CN106796924A (zh) | 2017-05-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6400108B2 (ja) | 高周波モジュール | |
JP5442424B2 (ja) | 半導体装置 | |
US10438862B2 (en) | Electromagnetic shield structure of high frequency circuit and high frequency module | |
WO2017187559A1 (ja) | 高周波回路 | |
US11984380B2 (en) | Semiconductor package, semiconductor device, semiconductor package-mounted apparatus, and semiconductor device-mounted apparatus | |
US9621196B2 (en) | High-frequency module and microwave transceiver | |
JP5921586B2 (ja) | ミリ波帯用半導体パッケージおよびミリ波帯用半導体装置 | |
US20080023826A1 (en) | Mounting device for a semiconductor package | |
JP2005026263A (ja) | 混成集積回路 | |
JP5444915B2 (ja) | 高周波モジュール及び高周波モジュールの製造方法 | |
KR20160036945A (ko) | 인쇄회로기판 및 이를 포함하는 전자부품 패키지 | |
KR102038602B1 (ko) | 고방열 팬아웃 패키지 및 그 제조방법 | |
JP7098820B2 (ja) | 無線通信モジュール | |
US9666543B2 (en) | Electronic system | |
WO2022014066A1 (ja) | 無線通信モジュール | |
WO2019221054A1 (ja) | アンテナ、アレイアンテナ及び無線通信装置 | |
TWI569379B (zh) | Semiconductor package for semiconductor and millimeter wavelength bands | |
TWI549231B (zh) | 亳米波段半導體用封裝及亳米波段用半導體裝置 | |
CN118117330A (zh) | 天线模块 | |
JP2009153071A (ja) | 2つのマイクロストリップ線路の接続構造及び筐体を用いた集積回路チップの実装基板への実装構造 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170216 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170216 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20171107 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171225 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180313 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180509 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180807 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180904 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6400108 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |