JP6384868B2 - システムインパッケージ及びその製造方法 - Google Patents

システムインパッケージ及びその製造方法 Download PDF

Info

Publication number
JP6384868B2
JP6384868B2 JP2014558928A JP2014558928A JP6384868B2 JP 6384868 B2 JP6384868 B2 JP 6384868B2 JP 2014558928 A JP2014558928 A JP 2014558928A JP 2014558928 A JP2014558928 A JP 2014558928A JP 6384868 B2 JP6384868 B2 JP 6384868B2
Authority
JP
Japan
Prior art keywords
substrate
package
semiconductor die
contact
laminate body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014558928A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015508244A (ja
JP2015508244A5 (https=
Inventor
ランゲ ベルンハルト
ランゲ ベルンハルト
ノイホイスラー ユルゲン
ノイホイスラー ユルゲン
Original Assignee
日本テキサス・インスツルメンツ株式会社
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本テキサス・インスツルメンツ株式会社, テキサス インスツルメンツ インコーポレイテッド, テキサス インスツルメンツ インコーポレイテッド filed Critical 日本テキサス・インスツルメンツ株式会社
Publication of JP2015508244A publication Critical patent/JP2015508244A/ja
Publication of JP2015508244A5 publication Critical patent/JP2015508244A5/ja
Application granted granted Critical
Publication of JP6384868B2 publication Critical patent/JP6384868B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00Packaging processes not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H10W70/614Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together the multiple chips being integrally enclosed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/019Manufacture or treatment of bond pads
    • H10W72/01931Manufacture or treatment of bond pads using blanket deposition
    • H10W72/01933Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H10W72/01935Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07331Connecting techniques
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07351Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07354Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in dispositions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/321Structures or relative sizes of die-attach connectors
    • H10W72/325Die-attach connectors having a filler embedded in a matrix
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/341Dispositions of die-attach connectors, e.g. layouts
    • H10W72/347Dispositions of multiple die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/351Materials of die-attach connectors
    • H10W72/352Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/59Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/926Multiple bond pads having different sizes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/9413Dispositions of bond pads on encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/944Dispositions of multiple bond pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • H10W72/952Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10Containers or parts thereof
    • H10W76/12Containers or parts thereof characterised by their shape
    • H10W76/13Containers comprising a conductive base serving as an interconnection
    • H10W76/138Containers comprising a conductive base serving as an interconnection having another interconnection being formed by a cover plate parallel to the conductive base, e.g. sandwich type
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Die Bonding (AREA)
  • Combinations Of Printed Boards (AREA)
JP2014558928A 2012-02-24 2013-02-25 システムインパッケージ及びその製造方法 Active JP6384868B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP12156909.9 2012-02-24
EP12156909 2012-02-24
US13/770,237 2013-02-19
US13/770,237 US8884343B2 (en) 2012-02-24 2013-02-19 System in package and method for manufacturing the same
PCT/US2013/027656 WO2013126893A1 (en) 2012-02-24 2013-02-25 System in package and method for manufacturing the same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018136615A Division JP6615284B2 (ja) 2012-02-24 2018-07-20 システムインパッケージ及びその製造方法

Publications (3)

Publication Number Publication Date
JP2015508244A JP2015508244A (ja) 2015-03-16
JP2015508244A5 JP2015508244A5 (https=) 2016-03-24
JP6384868B2 true JP6384868B2 (ja) 2018-09-05

Family

ID=49001956

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2014558928A Active JP6384868B2 (ja) 2012-02-24 2013-02-25 システムインパッケージ及びその製造方法
JP2018136615A Active JP6615284B2 (ja) 2012-02-24 2018-07-20 システムインパッケージ及びその製造方法
JP2019186475A Active JP7132467B2 (ja) 2012-02-24 2019-10-10 システムインパッケージ及びその製造方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2018136615A Active JP6615284B2 (ja) 2012-02-24 2018-07-20 システムインパッケージ及びその製造方法
JP2019186475A Active JP7132467B2 (ja) 2012-02-24 2019-10-10 システムインパッケージ及びその製造方法

Country Status (4)

Country Link
US (1) US8884343B2 (https=)
JP (3) JP6384868B2 (https=)
CN (1) CN104170082B (https=)
WO (1) WO2013126893A1 (https=)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8884343B2 (en) * 2012-02-24 2014-11-11 Texas Instruments Incorporated System in package and method for manufacturing the same
US9899133B2 (en) 2013-08-01 2018-02-20 Qorvo Us, Inc. Advanced 3D inductor structures with confined magnetic field
US12224096B2 (en) 2013-03-15 2025-02-11 Qorvo Us, Inc. Advanced 3D inductor structures with confined magnetic field
US9705478B2 (en) 2013-08-01 2017-07-11 Qorvo Us, Inc. Weakly coupled tunable RF receiver architecture
US9391565B2 (en) 2013-03-15 2016-07-12 TriQuint International PTE, Ltd. Amplifier phase distortion correction based on amplitude distortion measurement
DE112014001487B4 (de) * 2013-10-03 2021-03-04 Fuji Electric Co., Ltd. Halbleitermodul
US10242969B2 (en) 2013-11-12 2019-03-26 Infineon Technologies Ag Semiconductor package comprising a transistor chip module and a driver chip module and a method for fabricating the same
US9437516B2 (en) * 2014-01-07 2016-09-06 Infineon Technologies Austria Ag Chip-embedded packages with backside die connection
US10104764B2 (en) * 2014-03-18 2018-10-16 Texas Instruments Incorporated Electronic device package with vertically integrated capacitors
US10257937B2 (en) * 2014-07-07 2019-04-09 Infineon Technologies Austria Ag Device for electrically coupling a plurality of semiconductor device layers by a common conductive layer
EP2988328B1 (en) * 2014-08-19 2021-05-12 ABB Schweiz AG Power semiconductor module and method of manufacturing the same
JP6500563B2 (ja) * 2015-03-31 2019-04-17 アイシン・エィ・ダブリュ株式会社 スイッチング素子ユニット
SG10201504273UA (en) * 2015-05-29 2016-12-29 Delta Electronics Int’L Singapore Pte Ltd Power module
KR102394542B1 (ko) * 2015-07-30 2022-05-04 현대자동차 주식회사 반도체 패키지 및 그 제조 방법
US10796835B2 (en) * 2015-08-24 2020-10-06 Qorvo Us, Inc. Stacked laminate inductors for high module volume utilization and performance-cost-size-processing-time tradeoff
ITUB20153344A1 (it) * 2015-09-02 2017-03-02 St Microelectronics Srl Modulo di potenza elettronico con migliorata dissipazione termica e relativo metodo di fabbricazione
FR3041210B1 (fr) * 2015-09-15 2017-09-15 Sagem Defense Securite Procede d'assemblage par frittage d'argent sans pression
CN107919345B (zh) * 2015-10-15 2023-04-25 矽力杰半导体技术(杭州)有限公司 芯片的叠层封装结构及叠层封装方法
US10707171B2 (en) 2015-12-22 2020-07-07 Intel Corporation Ultra small molded module integrated with die by module-on-wafer assembly
US10845375B2 (en) * 2016-02-19 2020-11-24 Agjunction Llc Thermal stabilization of inertial measurement units
DE102016108000B3 (de) * 2016-04-29 2016-12-15 Danfoss Silicon Power Gmbh Verfahren zum stoffschlüssigen Verbinden einer ersten Komponente eines Leistungshalbleitermoduls mit einer zweiten Komponente eines Leistungshalbleitermoduls
US9824976B1 (en) * 2016-08-16 2017-11-21 Infineon Technologies Americas Corp. Single-sided power device package
US11139238B2 (en) 2016-12-07 2021-10-05 Qorvo Us, Inc. High Q factor inductor structure
FR3060243B1 (fr) * 2016-12-12 2019-08-23 Institut Vedecom Module de commutation de puissance, convertisseur integrant celui-ci et procede de fabrication
EP3584833B1 (en) * 2018-06-19 2021-09-01 Mitsubishi Electric R&D Centre Europe B.V. Power module with improved alignment
US20200176355A1 (en) * 2018-12-04 2020-06-04 Intel Corporation Substrate embedded heat pipe
JP7384335B2 (ja) * 2019-10-24 2023-11-21 京東方科技集團股▲ふん▼有限公司 駆動基板及びその製作方法並びに表示装置
DE102020106518A1 (de) 2020-03-10 2021-09-16 Infineon Technologies Ag Halbleitervorrichtungen mit parallelen elektrisch leitenden Schichten
JP7475925B2 (ja) * 2020-03-31 2024-04-30 愛三工業株式会社 電子基板
US12593739B2 (en) * 2020-07-06 2026-03-31 Amosense Co., Ltd. Power module
DE102020211631A1 (de) * 2020-09-17 2022-03-17 Robert Bosch Gesellschaft mit beschränkter Haftung Halbleitermodul für einen schweisstransformator und verfahren zum herstellen eines solchen halbleitermoduls
EP4016618B1 (en) 2020-12-21 2025-01-29 Hamilton Sundstrand Corporation Power device packaging
DE102021109658B3 (de) 2021-04-16 2022-10-20 Danfoss Silicon Power Gmbh Verfahren zur Herstellung eines Halbleiter-Leistungsgeräts und damit hergestelltes Halbleiter-Leistungsgerät sowie ein Werkzeugteil für eine Sinterpresse und Verwendung einer Sinterpresse
DE102021109666B3 (de) 2021-04-16 2022-10-20 Danfoss Silicon Power Gmbh Elektronisches Gerät und Verfahren zu dessen Herstellung
WO2023175675A1 (ja) * 2022-03-14 2023-09-21 三菱電機株式会社 パワーモジュール半導体パッケージおよび半導体装置
CN116230701B (zh) * 2023-03-09 2026-01-23 中国电子科技集团公司第十三研究所 系统级数模混合芯片封装结构及方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000151112A (ja) * 1998-11-10 2000-05-30 Toshiba Corp 配線基板及びその製造方法
JP2001044606A (ja) 1999-08-02 2001-02-16 Hitachi Ltd 半導体パッケージの実装構造体およびその実装方法並びにそのリワーク方法
JP2003197849A (ja) * 2001-10-18 2003-07-11 Matsushita Electric Ind Co Ltd 部品内蔵モジュールとその製造方法
CN1428851A (zh) * 2001-12-25 2003-07-09 譁裕实业股份有限公司 基片或芯片输入输出接点上金属凸块结构及其制造方法
JP2006202938A (ja) * 2005-01-20 2006-08-03 Kojiro Kobayashi 半導体装置及びその製造方法
TWI352406B (en) * 2006-11-16 2011-11-11 Nan Ya Printed Circuit Board Corp Embedded chip package with improved heat dissipati
JP2008153470A (ja) * 2006-12-18 2008-07-03 Renesas Technology Corp 半導体装置および半導体装置の製造方法
JP5151150B2 (ja) * 2006-12-28 2013-02-27 株式会社日立製作所 導電性焼結層形成用組成物、これを用いた導電性被膜形成法および接合法
US8350382B2 (en) * 2007-09-21 2013-01-08 Infineon Technologies Ag Semiconductor device including electronic component coupled to a backside of a chip
WO2009150875A1 (ja) * 2008-06-12 2009-12-17 株式会社安川電機 パワーモジュールおよびその制御方法
JP2010050189A (ja) * 2008-08-20 2010-03-04 Hitachi Metals Ltd 接合材、半導体装置およびその製造方法
US7898083B2 (en) * 2008-12-17 2011-03-01 Texas Instruments Incorporated Method for low stress flip-chip assembly of fine-pitch semiconductor devices
US8120158B2 (en) * 2009-11-10 2012-02-21 Infineon Technologies Ag Laminate electronic device
US8193040B2 (en) 2010-02-08 2012-06-05 Infineon Technologies Ag Manufacturing of a device including a semiconductor chip
JP2011222553A (ja) * 2010-04-02 2011-11-04 Denso Corp 半導体チップ内蔵配線基板及びその製造方法
JP2011238779A (ja) * 2010-05-11 2011-11-24 Mitsubishi Electric Corp 導電性接合構造体、これを用いた半導体装置および半導体装置の製造方法
US8884343B2 (en) * 2012-02-24 2014-11-11 Texas Instruments Incorporated System in package and method for manufacturing the same

Also Published As

Publication number Publication date
JP7132467B2 (ja) 2022-09-07
US20130221526A1 (en) 2013-08-29
JP2018190999A (ja) 2018-11-29
JP2015508244A (ja) 2015-03-16
WO2013126893A1 (en) 2013-08-29
CN104170082A (zh) 2014-11-26
CN104170082B (zh) 2021-09-03
JP2020021951A (ja) 2020-02-06
US8884343B2 (en) 2014-11-11
JP6615284B2 (ja) 2019-12-04

Similar Documents

Publication Publication Date Title
JP6615284B2 (ja) システムインパッケージ及びその製造方法
US9437516B2 (en) Chip-embedded packages with backside die connection
US10607957B2 (en) Ultra-thin embedded semiconductor device package and method of manufacturing thereof
JP5273095B2 (ja) 半導体装置
CN104051377B (zh) 功率覆盖结构及其制作方法
JP3709882B2 (ja) 回路モジュールとその製造方法
CN101937899B (zh) 半导体封装结构及封装工艺
US20170092611A1 (en) Porous metallic film as die attach and interconnect
US20170025379A1 (en) Power module package
CN112447534B (zh) 封装体及其制备方法
CN101009269B (zh) 半导体器件及其制造方法
US20130221442A1 (en) Embedded power stage module
CN108511406B (zh) 具有增强的散热性的电子组件
TW201230286A (en) Semiconductor device and method for manufacturing same
CN111599696A (zh) 半导体模块封装方法及半导体模块
JP5129472B2 (ja) 電力回路パッケージ及びその製作方法
CN118843934A (zh) 一种混合键合片以及一种冷却半导体功率模块
CN112714539A (zh) 电子组件及制造电子组件的方法
JP6804181B2 (ja) 電力用半導体モジュール及びその実装方法
KR20220033089A (ko) 복합 반도체 패키지 제조방법 및 동 제조방법으로 제조된 복합 반도체 패키지
JP2021052055A (ja) 部品モジュールおよびその製造方法
CN104157627B (zh) 半导体组件
JP2024126313A (ja) 半導体装置及び半導体装置の製造方法
CN102201393A (zh) 具有电器件和复合膜的电路系统

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20140825

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160203

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160203

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170221

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20170519

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170714

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180124

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20180419

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20180625

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180720

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180801

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180801

R150 Certificate of patent or registration of utility model

Ref document number: 6384868

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313117

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250