JP6384868B2 - システムインパッケージ及びその製造方法 - Google Patents
システムインパッケージ及びその製造方法 Download PDFInfo
- Publication number
- JP6384868B2 JP6384868B2 JP2014558928A JP2014558928A JP6384868B2 JP 6384868 B2 JP6384868 B2 JP 6384868B2 JP 2014558928 A JP2014558928 A JP 2014558928A JP 2014558928 A JP2014558928 A JP 2014558928A JP 6384868 B2 JP6384868 B2 JP 6384868B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- package
- semiconductor die
- contact
- laminate body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W95/00—Packaging processes not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
- H10W70/614—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together the multiple chips being integrally enclosed
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
- H10W72/01931—Manufacture or treatment of bond pads using blanket deposition
- H10W72/01933—Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
- H10W72/01935—Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07331—Connecting techniques
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
- H10W72/07354—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in dispositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/321—Structures or relative sizes of die-attach connectors
- H10W72/325—Die-attach connectors having a filler embedded in a matrix
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/341—Dispositions of die-attach connectors, e.g. layouts
- H10W72/347—Dispositions of multiple die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
- H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/59—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/926—Multiple bond pads having different sizes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/9413—Dispositions of bond pads on encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/944—Dispositions of multiple bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
- H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
- H10W76/10—Containers or parts thereof
- H10W76/12—Containers or parts thereof characterised by their shape
- H10W76/13—Containers comprising a conductive base serving as an interconnection
- H10W76/138—Containers comprising a conductive base serving as an interconnection having another interconnection being formed by a cover plate parallel to the conductive base, e.g. sandwich type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Die Bonding (AREA)
- Combinations Of Printed Boards (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP12156909.9 | 2012-02-24 | ||
| EP12156909 | 2012-02-24 | ||
| US13/770,237 | 2013-02-19 | ||
| US13/770,237 US8884343B2 (en) | 2012-02-24 | 2013-02-19 | System in package and method for manufacturing the same |
| PCT/US2013/027656 WO2013126893A1 (en) | 2012-02-24 | 2013-02-25 | System in package and method for manufacturing the same |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018136615A Division JP6615284B2 (ja) | 2012-02-24 | 2018-07-20 | システムインパッケージ及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015508244A JP2015508244A (ja) | 2015-03-16 |
| JP2015508244A5 JP2015508244A5 (https=) | 2016-03-24 |
| JP6384868B2 true JP6384868B2 (ja) | 2018-09-05 |
Family
ID=49001956
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014558928A Active JP6384868B2 (ja) | 2012-02-24 | 2013-02-25 | システムインパッケージ及びその製造方法 |
| JP2018136615A Active JP6615284B2 (ja) | 2012-02-24 | 2018-07-20 | システムインパッケージ及びその製造方法 |
| JP2019186475A Active JP7132467B2 (ja) | 2012-02-24 | 2019-10-10 | システムインパッケージ及びその製造方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018136615A Active JP6615284B2 (ja) | 2012-02-24 | 2018-07-20 | システムインパッケージ及びその製造方法 |
| JP2019186475A Active JP7132467B2 (ja) | 2012-02-24 | 2019-10-10 | システムインパッケージ及びその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8884343B2 (https=) |
| JP (3) | JP6384868B2 (https=) |
| CN (1) | CN104170082B (https=) |
| WO (1) | WO2013126893A1 (https=) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8884343B2 (en) * | 2012-02-24 | 2014-11-11 | Texas Instruments Incorporated | System in package and method for manufacturing the same |
| US9899133B2 (en) | 2013-08-01 | 2018-02-20 | Qorvo Us, Inc. | Advanced 3D inductor structures with confined magnetic field |
| US12224096B2 (en) | 2013-03-15 | 2025-02-11 | Qorvo Us, Inc. | Advanced 3D inductor structures with confined magnetic field |
| US9705478B2 (en) | 2013-08-01 | 2017-07-11 | Qorvo Us, Inc. | Weakly coupled tunable RF receiver architecture |
| US9391565B2 (en) | 2013-03-15 | 2016-07-12 | TriQuint International PTE, Ltd. | Amplifier phase distortion correction based on amplitude distortion measurement |
| DE112014001487B4 (de) * | 2013-10-03 | 2021-03-04 | Fuji Electric Co., Ltd. | Halbleitermodul |
| US10242969B2 (en) | 2013-11-12 | 2019-03-26 | Infineon Technologies Ag | Semiconductor package comprising a transistor chip module and a driver chip module and a method for fabricating the same |
| US9437516B2 (en) * | 2014-01-07 | 2016-09-06 | Infineon Technologies Austria Ag | Chip-embedded packages with backside die connection |
| US10104764B2 (en) * | 2014-03-18 | 2018-10-16 | Texas Instruments Incorporated | Electronic device package with vertically integrated capacitors |
| US10257937B2 (en) * | 2014-07-07 | 2019-04-09 | Infineon Technologies Austria Ag | Device for electrically coupling a plurality of semiconductor device layers by a common conductive layer |
| EP2988328B1 (en) * | 2014-08-19 | 2021-05-12 | ABB Schweiz AG | Power semiconductor module and method of manufacturing the same |
| JP6500563B2 (ja) * | 2015-03-31 | 2019-04-17 | アイシン・エィ・ダブリュ株式会社 | スイッチング素子ユニット |
| SG10201504273UA (en) * | 2015-05-29 | 2016-12-29 | Delta Electronics Int’L Singapore Pte Ltd | Power module |
| KR102394542B1 (ko) * | 2015-07-30 | 2022-05-04 | 현대자동차 주식회사 | 반도체 패키지 및 그 제조 방법 |
| US10796835B2 (en) * | 2015-08-24 | 2020-10-06 | Qorvo Us, Inc. | Stacked laminate inductors for high module volume utilization and performance-cost-size-processing-time tradeoff |
| ITUB20153344A1 (it) * | 2015-09-02 | 2017-03-02 | St Microelectronics Srl | Modulo di potenza elettronico con migliorata dissipazione termica e relativo metodo di fabbricazione |
| FR3041210B1 (fr) * | 2015-09-15 | 2017-09-15 | Sagem Defense Securite | Procede d'assemblage par frittage d'argent sans pression |
| CN107919345B (zh) * | 2015-10-15 | 2023-04-25 | 矽力杰半导体技术(杭州)有限公司 | 芯片的叠层封装结构及叠层封装方法 |
| US10707171B2 (en) | 2015-12-22 | 2020-07-07 | Intel Corporation | Ultra small molded module integrated with die by module-on-wafer assembly |
| US10845375B2 (en) * | 2016-02-19 | 2020-11-24 | Agjunction Llc | Thermal stabilization of inertial measurement units |
| DE102016108000B3 (de) * | 2016-04-29 | 2016-12-15 | Danfoss Silicon Power Gmbh | Verfahren zum stoffschlüssigen Verbinden einer ersten Komponente eines Leistungshalbleitermoduls mit einer zweiten Komponente eines Leistungshalbleitermoduls |
| US9824976B1 (en) * | 2016-08-16 | 2017-11-21 | Infineon Technologies Americas Corp. | Single-sided power device package |
| US11139238B2 (en) | 2016-12-07 | 2021-10-05 | Qorvo Us, Inc. | High Q factor inductor structure |
| FR3060243B1 (fr) * | 2016-12-12 | 2019-08-23 | Institut Vedecom | Module de commutation de puissance, convertisseur integrant celui-ci et procede de fabrication |
| EP3584833B1 (en) * | 2018-06-19 | 2021-09-01 | Mitsubishi Electric R&D Centre Europe B.V. | Power module with improved alignment |
| US20200176355A1 (en) * | 2018-12-04 | 2020-06-04 | Intel Corporation | Substrate embedded heat pipe |
| JP7384335B2 (ja) * | 2019-10-24 | 2023-11-21 | 京東方科技集團股▲ふん▼有限公司 | 駆動基板及びその製作方法並びに表示装置 |
| DE102020106518A1 (de) | 2020-03-10 | 2021-09-16 | Infineon Technologies Ag | Halbleitervorrichtungen mit parallelen elektrisch leitenden Schichten |
| JP7475925B2 (ja) * | 2020-03-31 | 2024-04-30 | 愛三工業株式会社 | 電子基板 |
| US12593739B2 (en) * | 2020-07-06 | 2026-03-31 | Amosense Co., Ltd. | Power module |
| DE102020211631A1 (de) * | 2020-09-17 | 2022-03-17 | Robert Bosch Gesellschaft mit beschränkter Haftung | Halbleitermodul für einen schweisstransformator und verfahren zum herstellen eines solchen halbleitermoduls |
| EP4016618B1 (en) | 2020-12-21 | 2025-01-29 | Hamilton Sundstrand Corporation | Power device packaging |
| DE102021109658B3 (de) | 2021-04-16 | 2022-10-20 | Danfoss Silicon Power Gmbh | Verfahren zur Herstellung eines Halbleiter-Leistungsgeräts und damit hergestelltes Halbleiter-Leistungsgerät sowie ein Werkzeugteil für eine Sinterpresse und Verwendung einer Sinterpresse |
| DE102021109666B3 (de) | 2021-04-16 | 2022-10-20 | Danfoss Silicon Power Gmbh | Elektronisches Gerät und Verfahren zu dessen Herstellung |
| WO2023175675A1 (ja) * | 2022-03-14 | 2023-09-21 | 三菱電機株式会社 | パワーモジュール半導体パッケージおよび半導体装置 |
| CN116230701B (zh) * | 2023-03-09 | 2026-01-23 | 中国电子科技集团公司第十三研究所 | 系统级数模混合芯片封装结构及方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000151112A (ja) * | 1998-11-10 | 2000-05-30 | Toshiba Corp | 配線基板及びその製造方法 |
| JP2001044606A (ja) | 1999-08-02 | 2001-02-16 | Hitachi Ltd | 半導体パッケージの実装構造体およびその実装方法並びにそのリワーク方法 |
| JP2003197849A (ja) * | 2001-10-18 | 2003-07-11 | Matsushita Electric Ind Co Ltd | 部品内蔵モジュールとその製造方法 |
| CN1428851A (zh) * | 2001-12-25 | 2003-07-09 | 譁裕实业股份有限公司 | 基片或芯片输入输出接点上金属凸块结构及其制造方法 |
| JP2006202938A (ja) * | 2005-01-20 | 2006-08-03 | Kojiro Kobayashi | 半導体装置及びその製造方法 |
| TWI352406B (en) * | 2006-11-16 | 2011-11-11 | Nan Ya Printed Circuit Board Corp | Embedded chip package with improved heat dissipati |
| JP2008153470A (ja) * | 2006-12-18 | 2008-07-03 | Renesas Technology Corp | 半導体装置および半導体装置の製造方法 |
| JP5151150B2 (ja) * | 2006-12-28 | 2013-02-27 | 株式会社日立製作所 | 導電性焼結層形成用組成物、これを用いた導電性被膜形成法および接合法 |
| US8350382B2 (en) * | 2007-09-21 | 2013-01-08 | Infineon Technologies Ag | Semiconductor device including electronic component coupled to a backside of a chip |
| WO2009150875A1 (ja) * | 2008-06-12 | 2009-12-17 | 株式会社安川電機 | パワーモジュールおよびその制御方法 |
| JP2010050189A (ja) * | 2008-08-20 | 2010-03-04 | Hitachi Metals Ltd | 接合材、半導体装置およびその製造方法 |
| US7898083B2 (en) * | 2008-12-17 | 2011-03-01 | Texas Instruments Incorporated | Method for low stress flip-chip assembly of fine-pitch semiconductor devices |
| US8120158B2 (en) * | 2009-11-10 | 2012-02-21 | Infineon Technologies Ag | Laminate electronic device |
| US8193040B2 (en) | 2010-02-08 | 2012-06-05 | Infineon Technologies Ag | Manufacturing of a device including a semiconductor chip |
| JP2011222553A (ja) * | 2010-04-02 | 2011-11-04 | Denso Corp | 半導体チップ内蔵配線基板及びその製造方法 |
| JP2011238779A (ja) * | 2010-05-11 | 2011-11-24 | Mitsubishi Electric Corp | 導電性接合構造体、これを用いた半導体装置および半導体装置の製造方法 |
| US8884343B2 (en) * | 2012-02-24 | 2014-11-11 | Texas Instruments Incorporated | System in package and method for manufacturing the same |
-
2013
- 2013-02-19 US US13/770,237 patent/US8884343B2/en active Active
- 2013-02-25 WO PCT/US2013/027656 patent/WO2013126893A1/en not_active Ceased
- 2013-02-25 JP JP2014558928A patent/JP6384868B2/ja active Active
- 2013-02-25 CN CN201380010431.XA patent/CN104170082B/zh active Active
-
2018
- 2018-07-20 JP JP2018136615A patent/JP6615284B2/ja active Active
-
2019
- 2019-10-10 JP JP2019186475A patent/JP7132467B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP7132467B2 (ja) | 2022-09-07 |
| US20130221526A1 (en) | 2013-08-29 |
| JP2018190999A (ja) | 2018-11-29 |
| JP2015508244A (ja) | 2015-03-16 |
| WO2013126893A1 (en) | 2013-08-29 |
| CN104170082A (zh) | 2014-11-26 |
| CN104170082B (zh) | 2021-09-03 |
| JP2020021951A (ja) | 2020-02-06 |
| US8884343B2 (en) | 2014-11-11 |
| JP6615284B2 (ja) | 2019-12-04 |
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