JP6244019B2 - Iii族窒化物半導体デバイスおよびその製造方法 - Google Patents
Iii族窒化物半導体デバイスおよびその製造方法 Download PDFInfo
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- JP6244019B2 JP6244019B2 JP2016522773A JP2016522773A JP6244019B2 JP 6244019 B2 JP6244019 B2 JP 6244019B2 JP 2016522773 A JP2016522773 A JP 2016522773A JP 2016522773 A JP2016522773 A JP 2016522773A JP 6244019 B2 JP6244019 B2 JP 6244019B2
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- nitride
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- dielectric layer
- nitride semiconductor
- semiconductor device
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- 150000004767 nitrides Chemical class 0.000 title claims description 313
- 239000004065 semiconductor Substances 0.000 title claims description 68
- 238000004519 manufacturing process Methods 0.000 title claims description 52
- 239000002131 composite material Substances 0.000 claims description 69
- 230000004888 barrier function Effects 0.000 claims description 62
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 42
- 238000002161 passivation Methods 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 36
- 229910002601 GaN Inorganic materials 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 25
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- -1 silicon-aluminum-nitrogen Chemical compound 0.000 claims description 10
- 230000006911 nucleation Effects 0.000 claims description 9
- 238000010899 nucleation Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 238000003780 insertion Methods 0.000 claims description 8
- 230000037431 insertion Effects 0.000 claims description 8
- 238000000231 atomic layer deposition Methods 0.000 claims description 6
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 2
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 502
- 230000005669 field effect Effects 0.000 description 54
- 230000000694 effects Effects 0.000 description 23
- 238000010586 diagram Methods 0.000 description 15
- 230000006872 improvement Effects 0.000 description 13
- 230000015556 catabolic process Effects 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 4
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 230000001052 transient effect Effects 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 208000032750 Device leakage Diseases 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical group Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
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- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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Description
本願は、2013年10月15日に中国専利局に提出された、出願番号が201310482857.7であり、発明の名称が「III族窒化物半導体デバイスおよびその製造方法」である特許出願の優先権を主張し、その全ての内容は参照することにより本願に組み込まれる。
III族窒化物半導体デバイスであって、
基板と、
前記基板上に位置し、基板の方向から順次に形成された窒化物核形成層、窒化物バッファ層、窒化物チャネル層、窒化物バリア層を含む窒化物半導体層と、
前記窒化物半導体層上に位置し、窒化ケイ素、ケイ素−アルミニウム−窒素(Si−Al−N)、二酸化ケイ素のうちの1つまたは複数の組み合わせであり、ゲート領域において窒化物バリア層を暴露するまでエッチングされ、ゲート溝が形成されているパッシベーション層と、
前記パッシベーション層および前記ゲート溝の上に位置し、基板の方向から順次に形成された窒化物誘電体層、酸窒化物誘電体層、および酸化物誘電体層のうちの2つ以上の組み合わせ構造を1つまたは複数含む複合誘電体層と、
前記窒化物バリア層上のソース領域およびドレイン領域に位置するソースおよびドレイン、並びに、ソースとドレインとの間で前記複合誘電体層上の対応のゲート領域に位置するゲートと、を含む。
本発明のさらなる改善として、前記窒化アルミニウム誘電体層の厚さが4ナノメートルより小さい。
本発明のさらなる改善として、前記窒化アルミニウム誘電体層の厚さが2ナノメートルより小さい。
本発明のさらなる改善として、前記窒化物キャップ層は、窒化ガリウム層を含む。
本発明のさらなる改善として、前記窒化物バリア層と前記窒化物チャネル層との間には、窒化物挿入層が設けられている。
基板を提供し、
基板の方向から順次に形成された窒化物核形成層、窒化物バッファ層、窒化物チャネル層、窒化物バリア層を含む窒化物半導体層を前記基板上に形成し、
窒化ケイ素、ケイ素−アルミニウム−窒素(Si−Al−N)、二酸化ケイ素のうちの1つまたは複数の組み合わせであり、ゲート領域において窒化物バリア層を暴露するまでエッチングされ、ゲート溝が形成されているパッシベーション層を前記窒化物半導体層上に形成し、
基板の方向から順次に形成された窒化物誘電体層、酸窒化物誘電体層、および酸化物誘電体層のうちの2つ以上の組み合わせ構造を1つまたは複数含む複合誘電体層を前記パッシベーション層および前記ゲート溝の上に形成し、
前記窒化物バリア層上のソース領域およびドレイン領域にソースおよびドレインを形成し、ソースとドレインとの間で前記複合誘電体層上の対応のゲート領域にゲートを形成する、ことを含む。
本発明のさらなる改善として、前記酸窒化物誘電体層の形成方法は、具体的に、
窒化物誘電体層を堆積し、
前記窒化物誘電体層の表面に酸化処理を行って、酸窒化物誘電体層を生成する、ことを含む。
基板と、
基板上に位置し、基板の方向から順次に形成された窒化物核形成層、窒化物バッファ層、窒化物チャネル層、窒化物バリア層を含む窒化物半導体層と、
窒化物半導体層上に位置し、窒化ケイ素、ケイ素−アルミニウム−窒素(Si−Al−N)、二酸化ケイ素のうちの1つまたは複数の組み合わせであり、ゲート領域において窒化物バリア層を暴露するまでエッチングされ、ゲートに溝が形成されているパッシベーション層と、
パッシベーション層および溝の上に位置し、基板の方向から順次に形成された窒化物誘電体層、酸窒化物誘電体層、および酸化物誘電体層のうちの2つ以上の組み合わせ構造を1つまたは複数含む複合誘電体層と、
窒化物バリア層上のソース領域およびドレイン領域に位置するソースおよびドレイン、並びに、ソースとドレインとの間で複合誘電体層上の対応のゲート領域に位置するゲートと、を含む。
好ましくは、窒化物キャップ層は、窒化ガリウム層を含む。
好ましくは、窒化物バリア層と窒化物チャネル層との間には、窒化アルミニウム挿入層が設けられている。
基板を提供し、
基板の方向から順次に形成された窒化物核形成層、窒化物バッファ層、窒化物チャネル層、窒化物バリア層を含む窒化物半導体層を基板上に形成し、
窒化ケイ素、ケイ素−アルミニウム−窒素(Si−Al−N)、二酸化ケイ素のうちの1つまたは複数の組み合わせであり、ゲート領域において窒化物バリア層を暴露するまでエッチングされ、ゲートに溝が形成されているパッシベーション層を窒化物半導体層上に形成し、
基板の方向から順次に形成された窒化物誘電体層、酸窒化物誘電体層、および酸化物誘電体層のうちの2つ以上の組み合わせ構造を1つまたは複数含む複合誘電体層をパッシベーション層および溝の上に形成し、
窒化物バリア層上のソース領域およびドレイン領域にソースおよびドレインを形成し、ソースとドレインとの間で複合誘電体層上の対応のゲート領域にゲートを形成する、ことを含む。
好ましくは、窒化物キャップ層は、窒化ガリウム層を含む。
好ましくは、パッシベーション層のゲート領域をエッチングする際に、窒化物バリア層をオーバーエッチングして、窒化物バリア層の内部に溝を形成してもよい。
Claims (15)
- III族窒化物半導体デバイスであって、
基板と、
前記基板上に位置し、基板の方向から順次に形成された窒化物核形成層、窒化物バッファ層、窒化物チャネル層、窒化物バリア層を含む窒化物半導体層と、
前記窒化物半導体層上に位置し、窒化ケイ素、ケイ素−アルミニウム−窒素(Si−Al−N)、二酸化ケイ素のうちの1つまたは複数の組み合わせであり、ゲート領域において窒化物バリア層を暴露するまでエッチングされ、ゲート溝が形成されているパッシベーション層と、
前記パッシベーション層および前記ゲート溝の上に位置し、基板の方向から順次に形成された結晶体または無定形状態である窒化アルミニウム誘電体層を含む窒化物誘電体層、酸窒化物誘電体層、および酸化物誘電体層の組み合わせ構造を1つまたは複数含む複合誘電体層と、
前記窒化物バリア層上のソース領域およびドレイン領域に位置するソースおよびドレイン、並びに、ソースとドレインとの間で前記複合誘電体層上の対応のゲート領域に位置するゲートと、
を含むことを特徴とするIII族窒化物半導体デバイス。 - III族窒化物半導体デバイスであって、
基板と、
前記基板上に位置し、基板の方向から順次に形成された窒化物核形成層、窒化物バッファ層、窒化物チャネル層、窒化物バリア層を含む窒化物半導体層と、
前記窒化物半導体層上に位置し、窒化ケイ素、ケイ素−アルミニウム−窒素(Si−Al−N)、二酸化ケイ素のうちの1つまたは複数の組み合わせであり、ゲート領域において窒化物バリア層を暴露するまでエッチングされ、ゲート溝が形成されているパッシベーション層と、
前記パッシベーション層および前記ゲート溝の上に位置し、基板の方向から順次に形成された窒化物誘電体層、酸窒化物誘電体層、および酸化物誘電体層のうちの2つ以上の組み合わせ構造を複数含む複合誘電体層と、
前記窒化物バリア層上のソース領域およびドレイン領域に位置するソースおよびドレイン、並びに、ソースとドレインとの間で前記複合誘電体層上の対応のゲート領域に位置するゲートと、
を含み、
前記複合誘電体層における複数の、基板の方向から順次に形成された窒化物誘電体層、酸窒化物誘電体層、および酸化物誘電体層のうちの2つ以上の組み合わせ構造は、複数周期繰り返して交互積層するように設けられる、ことを特徴とするIII族窒化物半導体デバイス。 - 前記窒化物誘電体層は、結晶体または無定形状態である窒化アルミニウム誘電体層を含む、ことを特徴とする請求項2に記載のIII族窒化物半導体デバイス。
- 前記窒化アルミニウム誘電体層の厚さが4ナノメートルより小さいことを特徴とする請求項1又は3に記載のIII族窒化物半導体デバイス。
- 前記窒化アルミニウム誘電体層の厚さが2ナノメートルより小さいことを特徴とする請求項4に記載のIII族窒化物半導体デバイス。
- 前記酸化物誘電体層は、アルミナ誘電体層、二酸化ケイ素誘電体層、酸化ハフニウム誘電体層のうちの1つまたは複数の組み合わせを含む、ことを特徴とする請求項1又は2に記載のIII族窒化物半導体デバイス。
- 前記酸窒化物誘電体層は、酸窒化アルミニウム誘電体層を含む、ことを特徴とする請求項1又は2に記載のIII族窒化物半導体デバイス。
- 前記窒化物バリア層と前記パッシベーション層との間に、窒化物キャップ層をさらに含む、ことを特徴とする請求項1又は2に記載のIII族窒化物半導体デバイス。
- 前記窒化物キャップ層は、窒化ガリウム層を含む、ことを特徴とする請求項8に記載のIII族窒化物半導体デバイス。
- 前記窒化物バリア層は、エッチングによって内部に溝構造が形成されている、ことを特徴とする請求項1又は2に記載のIII族窒化物半導体デバイス。
- 前記窒化物バリア層と前記窒化物チャネル層との間には、窒化物挿入層が設けられている、ことを特徴とする請求項1又は2に記載のIII族窒化物半導体デバイス。
- 前記窒化物半導体層は、窒化ガリウム層、インジウム窒化ガリウム層、窒化アルミニウムガリウム層、窒化アルミニウムインジウムガリウム層の1つまたは複数の組み合わせを含む、ことを特徴とする請求項1又は2に記載のIII族窒化物半導体デバイス。
- 請求項1〜12のいずれか1項に記載のIII族窒化物半導体デバイスの製造方法であって、
基板を提供し、
基板の方向から順次に形成された窒化物核形成層、窒化物バッファ層、窒化物チャネル層、窒化物バリア層を含む窒化物半導体層を前記基板上に形成し、
窒化ケイ素、ケイ素−アルミニウム−窒素(Si−Al−N)、二酸化ケイ素のうちの1つまたは複数の組み合わせであり、ゲート領域において窒化物バリア層を暴露するまでエッチングされ、ゲート溝が形成されているパッシベーション層を前記窒化物半導体層上に形成し、
基板の方向から順次に形成された窒化物誘電体層、酸窒化物誘電体層、および酸化物誘電体層のうちの2つ以上の組み合わせ構造を1つまたは複数含む複合誘電体層を前記パッシベーション層および前記ゲート溝の上に形成し、
前記窒化物バリア層上のソース領域およびドレイン領域にソースおよびドレインを形成し、ソースとドレインとの間で前記複合誘電体層上の対応のゲート領域にゲートを形成する、
ことを含むことを特徴とするIII族窒化物半導体デバイスの製造方法。 - 前記酸化物誘電体層の形成方法は、原子層堆積を含む、ことを特徴とする請求項13に記載のIII族窒化物半導体デバイスの製造方法。
- 前記酸窒化物誘電体層の形成方法は、具体的に、
窒化物誘電体層を堆積し、
前記窒化物誘電体層の表面に酸化処理を行って、酸窒化物誘電体層を生成する、
ことを含むことを特徴とする請求項13に記載のIII族窒化物半導体デバイスの製造方法。
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Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103500763B (zh) * | 2013-10-15 | 2017-03-15 | 苏州晶湛半导体有限公司 | Ⅲ族氮化物半导体器件及其制造方法 |
CN105336789A (zh) * | 2015-10-29 | 2016-02-17 | 中山大学 | 一种高质量MIS结构的GaN基场效应晶体管及其制备方法 |
CN107230620A (zh) * | 2016-03-25 | 2017-10-03 | 北京大学 | 氮化镓晶体管的制备方法 |
JP6772579B2 (ja) * | 2016-06-23 | 2020-10-21 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
CN107785243B (zh) * | 2016-08-26 | 2023-06-20 | 住友电工光电子器件创新株式会社 | 形成氮化物半导体层的工艺 |
TWI612662B (zh) * | 2017-01-09 | 2018-01-21 | 國立臺灣師範大學 | 半導體裝置及其製造方法 |
JP7203727B2 (ja) * | 2017-07-07 | 2023-01-13 | パナソニックホールディングス株式会社 | 半導体装置 |
US10446681B2 (en) * | 2017-07-10 | 2019-10-15 | Micron Technology, Inc. | NAND memory arrays, and devices comprising semiconductor channel material and nitrogen |
US10068986B1 (en) * | 2017-10-27 | 2018-09-04 | Vanguard International Semiconductor Corporation | Enhanced-mode high electron mobility transistor and method for forming the same |
CN108022833A (zh) * | 2017-11-17 | 2018-05-11 | 清华大学 | 制备半导体结构的方法、半导体结构及场效应晶体管 |
JP6728123B2 (ja) * | 2017-11-22 | 2020-07-22 | 株式会社東芝 | 半導体装置、電源回路、及び、コンピュータ |
US10297611B1 (en) | 2017-12-27 | 2019-05-21 | Micron Technology, Inc. | Transistors and arrays of elevationally-extending strings of memory cells |
US10559466B2 (en) | 2017-12-27 | 2020-02-11 | Micron Technology, Inc. | Methods of forming a channel region of a transistor and methods used in forming a memory array |
CN110556422B (zh) * | 2018-06-01 | 2023-07-18 | 苏州捷芯威半导体有限公司 | 半导体器件及制造方法 |
CN108831923B (zh) * | 2018-06-08 | 2021-08-27 | 珠海镓未来科技有限公司 | 一种增强型高电子迁移率晶体管及其制备方法 |
JP7071893B2 (ja) * | 2018-07-23 | 2022-05-19 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2022525635A (ja) | 2019-03-22 | 2022-05-18 | アプライド マテリアルズ インコーポレイテッド | 金属窒化物の堆積のための方法及び装置 |
JP2022525617A (ja) * | 2019-03-22 | 2022-05-18 | アプライド マテリアルズ インコーポレイテッド | 超電導膜を有する多層デバイスの堆積のための方法及び装置 |
US12027613B2 (en) * | 2019-05-22 | 2024-07-02 | Intel Corporation | III-N transistor arrangements for reducing nonlinearity of off-state capacitance |
EP3973576A1 (en) * | 2019-05-23 | 2022-03-30 | Power Integrations, Inc. | An enhancement mode metal insulator semiconductor high electron mobility transistor |
JP6773873B2 (ja) * | 2019-11-19 | 2020-10-21 | 株式会社東芝 | 半導体装置 |
US20220069113A1 (en) * | 2019-11-26 | 2022-03-03 | Enkris Semiconductor, Inc. | Semiconductor structures and manufacturing methods thereof |
TWI753759B (zh) | 2020-02-03 | 2022-01-21 | 美商應用材料股份有限公司 | 具有整合化氮化鋁種晶或波導層的超導奈米線單光子偵測器 |
TWI780579B (zh) | 2020-02-03 | 2022-10-11 | 美商應用材料股份有限公司 | 具有整合化氮化鋁晶種或波導層的超導奈米線單光子偵測器 |
CN111477536A (zh) | 2020-03-31 | 2020-07-31 | 华为技术有限公司 | 一种半导体外延结构及半导体器件 |
CN216354230U (zh) * | 2020-12-01 | 2022-04-19 | 深圳市晶相技术有限公司 | 一种半导体器件及其应用 |
US11538919B2 (en) | 2021-02-23 | 2022-12-27 | Micron Technology, Inc. | Transistors and arrays of elevationally-extending strings of memory cells |
CN113594036A (zh) * | 2021-07-30 | 2021-11-02 | 苏州英嘉通半导体有限公司 | Ⅲ族氮化物增强型hemt器件及其制造方法 |
US20230078017A1 (en) * | 2021-09-16 | 2023-03-16 | Wolfspeed, Inc. | Semiconductor device incorporating a substrate recess |
CN115579290B (zh) * | 2022-12-13 | 2023-03-10 | 江苏能华微电子科技发展有限公司 | 一种p-GaN增强型器件制备方法 |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003026019A1 (fr) * | 2001-09-12 | 2003-03-27 | Nec Corporation | Dispositif a semi-conducteurs et procede de production correspondant |
US7238560B2 (en) * | 2004-07-23 | 2007-07-03 | Cree, Inc. | Methods of fabricating nitride-based transistors with a cap layer and a recessed gate |
JP2006250968A (ja) | 2005-03-08 | 2006-09-21 | Ricoh Co Ltd | 投射型表示装置、投射型表示装置の液晶表示素子調整接着方法及び液晶表示素子調整接着装置 |
JP2007220356A (ja) | 2006-02-14 | 2007-08-30 | Toray Eng Co Ltd | 固体高分子型燃料電池のセパレータ |
US7674573B2 (en) * | 2006-08-08 | 2010-03-09 | Canon Kabushiki Kaisha | Method for manufacturing layered periodic structures |
JP2008072029A (ja) * | 2006-09-15 | 2008-03-27 | Sumitomo Chemical Co Ltd | 半導体エピタキシャル結晶基板の製造方法 |
JP4282708B2 (ja) * | 2006-10-20 | 2009-06-24 | 株式会社東芝 | 窒化物系半導体装置 |
US7687856B2 (en) * | 2007-05-10 | 2010-03-30 | Texas Instruments Incorporated | Body bias to facilitate transistor matching |
JP5348364B2 (ja) * | 2007-08-27 | 2013-11-20 | サンケン電気株式会社 | ヘテロ接合型電界効果半導体装置 |
JP5301208B2 (ja) * | 2008-06-17 | 2013-09-25 | 日本電信電話株式会社 | 半導体装置 |
US7985986B2 (en) * | 2008-07-31 | 2011-07-26 | Cree, Inc. | Normally-off semiconductor devices |
US8330167B2 (en) * | 2008-11-26 | 2012-12-11 | Furukawa Electric Co., Ltd | GaN-based field effect transistor and method of manufacturing the same |
WO2010084725A1 (ja) * | 2009-01-23 | 2010-07-29 | シャープ株式会社 | 半導体装置およびその製造方法ならびに表示装置 |
JP4968747B2 (ja) * | 2009-02-03 | 2012-07-04 | シャープ株式会社 | Iii−v族化合物半導体素子 |
JP5697456B2 (ja) * | 2009-02-16 | 2015-04-08 | ルネサスエレクトロニクス株式会社 | 電界効果トランジスタ及び電力制御装置 |
JP5233904B2 (ja) | 2009-08-18 | 2013-07-10 | サンケン電気株式会社 | Led駆動回路 |
JP2012099617A (ja) | 2010-11-01 | 2012-05-24 | Sharp Corp | 化合物半導体装置、および化合物半導体装置の製造方法 |
JP5919626B2 (ja) * | 2011-02-25 | 2016-05-18 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
CN102760759B (zh) * | 2011-04-29 | 2016-02-03 | 比亚迪股份有限公司 | 一种半导体功率器件 |
GB201112330D0 (en) * | 2011-07-18 | 2011-08-31 | Epigan Nv | Method for growing III-V epitaxial layers and semiconductor structure |
US8941118B1 (en) * | 2011-07-29 | 2015-01-27 | Hrl Laboratories, Llc | Normally-off III-nitride transistors with high threshold-voltage and low on-resistance |
JP5782947B2 (ja) | 2011-09-15 | 2015-09-24 | 富士通株式会社 | 半導体装置及びその製造方法、電源装置、高周波増幅器 |
US8633094B2 (en) * | 2011-12-01 | 2014-01-21 | Power Integrations, Inc. | GaN high voltage HFET with passivation plus gate dielectric multilayer structure |
JP5785103B2 (ja) * | 2012-01-16 | 2015-09-24 | シャープ株式会社 | ヘテロ接合型電界効果トランジスタ用のエピタキシャルウエハ |
JP5888064B2 (ja) * | 2012-03-29 | 2016-03-16 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
JP5990976B2 (ja) * | 2012-03-29 | 2016-09-14 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
CN102723358B (zh) * | 2012-05-30 | 2015-01-07 | 苏州能讯高能半导体有限公司 | 绝缘栅场效应晶体管及其制造方法 |
JP6042160B2 (ja) * | 2012-10-03 | 2016-12-14 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
CN203085533U (zh) * | 2012-10-26 | 2013-07-24 | 京东方科技集团股份有限公司 | 阵列基板和显示装置 |
CN103117303B (zh) * | 2013-02-07 | 2016-08-17 | 苏州晶湛半导体有限公司 | 一种氮化物功率器件及其制造方法 |
US9123802B2 (en) * | 2013-10-03 | 2015-09-01 | Texas Instruments Incorporated | Vertical trench MOSFET device in integrated power technologies |
CN103500763B (zh) * | 2013-10-15 | 2017-03-15 | 苏州晶湛半导体有限公司 | Ⅲ族氮化物半导体器件及其制造方法 |
CN103887163B (zh) * | 2014-04-03 | 2016-04-20 | 中国科学院半导体研究所 | 用于SiC基MOS器件栅介质薄膜的制备方法 |
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