CN103887163B - 用于SiC基MOS器件栅介质薄膜的制备方法 - Google Patents
用于SiC基MOS器件栅介质薄膜的制备方法 Download PDFInfo
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- CN103887163B CN103887163B CN201410132967.5A CN201410132967A CN103887163B CN 103887163 B CN103887163 B CN 103887163B CN 201410132967 A CN201410132967 A CN 201410132967A CN 103887163 B CN103887163 B CN 103887163B
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- gate dielectric
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- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000012528 membrane Substances 0.000 title claims abstract description 15
- 239000010408 film Substances 0.000 claims abstract description 53
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000003647 oxidation Effects 0.000 claims abstract description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 8
- 238000000137 annealing Methods 0.000 claims abstract description 6
- 229910052786 argon Inorganic materials 0.000 claims abstract description 6
- 238000000427 thin-film deposition Methods 0.000 claims abstract description 6
- 238000005516 engineering process Methods 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 238000001704 evaporation Methods 0.000 claims abstract description 4
- 230000008020 evaporation Effects 0.000 claims abstract description 4
- 238000004544 sputter deposition Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- 238000005240 physical vapour deposition Methods 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 32
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- 239000008367 deionised water Substances 0.000 description 7
- 229910021641 deionized water Inorganic materials 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000415 inactivating effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201410132967.5A CN103887163B (zh) | 2014-04-03 | 2014-04-03 | 用于SiC基MOS器件栅介质薄膜的制备方法 |
Applications Claiming Priority (1)
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CN201410132967.5A CN103887163B (zh) | 2014-04-03 | 2014-04-03 | 用于SiC基MOS器件栅介质薄膜的制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN103887163A CN103887163A (zh) | 2014-06-25 |
CN103887163B true CN103887163B (zh) | 2016-04-20 |
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CN201410132967.5A Active CN103887163B (zh) | 2014-04-03 | 2014-04-03 | 用于SiC基MOS器件栅介质薄膜的制备方法 |
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Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103500763B (zh) * | 2013-10-15 | 2017-03-15 | 苏州晶湛半导体有限公司 | Ⅲ族氮化物半导体器件及其制造方法 |
CN106653591A (zh) * | 2016-12-12 | 2017-05-10 | 东莞市广信知识产权服务有限公司 | 一种在GaN表面生长高K介质的方法 |
CN106783976A (zh) * | 2016-12-12 | 2017-05-31 | 东莞市广信知识产权服务有限公司 | 一种GaN沟道MOS界面结构 |
CN109037332A (zh) * | 2017-06-12 | 2018-12-18 | 中兴通讯股份有限公司 | 碳化硅金属氧化物半导体场效应晶体管及其制造方法 |
CN107910265A (zh) * | 2017-11-17 | 2018-04-13 | 清华大学 | 制备半导体结构的方法、半导体结构及场效应晶体管 |
CN108022833A (zh) * | 2017-11-17 | 2018-05-11 | 清华大学 | 制备半导体结构的方法、半导体结构及场效应晶体管 |
CN108417488B (zh) * | 2018-03-15 | 2021-04-06 | 吉林大学 | 一种复合绝缘结构、晶体管以及复合绝缘结构和晶体管的制作方法 |
CN110233174A (zh) * | 2019-06-13 | 2019-09-13 | 深圳爱仕特科技有限公司 | 绝缘栅介质层的制备方法及其碳化硅器件和碳化硅器件的制备方法 |
CN111640794A (zh) * | 2020-06-10 | 2020-09-08 | 全球能源互联网研究院有限公司 | 一种高介电常数栅介质材料及其制备方法 |
CN113555441B (zh) * | 2021-06-09 | 2023-06-27 | 浙江芯科半导体有限公司 | 一种SiC基MIS器件及其制备方法 |
CN114530506B (zh) * | 2021-11-02 | 2023-03-17 | 浙江芯科半导体有限公司 | 用于SiC基场效应晶体管的栅介质薄膜晶体管及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1336010A (zh) * | 1998-08-28 | 2002-02-13 | 克里公司 | 碳化硅半导体结构上的层叠电介质 |
CN1555580A (zh) * | 2001-09-12 | 2004-12-15 | �ձ�������ʽ���� | 半导体器件及其制造方法 |
CN101427386A (zh) * | 2004-06-04 | 2009-05-06 | 国际商业机器公司 | 阻挡层的选择性实施以实现在具有高k电介质的CMOS器件制造中的阈值电压控制 |
CN101563780A (zh) * | 2005-10-26 | 2009-10-21 | 国际商业机器公司 | 具有双重阈值电压控制手段的低阈值电压半导体器件 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3923926B2 (ja) * | 2003-07-04 | 2007-06-06 | 株式会社東芝 | 半導体記憶装置 |
US7045814B2 (en) * | 2004-06-24 | 2006-05-16 | Lucent Technologies Inc. | OFET structures with both n- and p-type channels |
-
2014
- 2014-04-03 CN CN201410132967.5A patent/CN103887163B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1336010A (zh) * | 1998-08-28 | 2002-02-13 | 克里公司 | 碳化硅半导体结构上的层叠电介质 |
CN1555580A (zh) * | 2001-09-12 | 2004-12-15 | �ձ�������ʽ���� | 半导体器件及其制造方法 |
CN101427386A (zh) * | 2004-06-04 | 2009-05-06 | 国际商业机器公司 | 阻挡层的选择性实施以实现在具有高k电介质的CMOS器件制造中的阈值电压控制 |
CN101563780A (zh) * | 2005-10-26 | 2009-10-21 | 国际商业机器公司 | 具有双重阈值电压控制手段的低阈值电压半导体器件 |
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CN103887163A (zh) | 2014-06-25 |
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Effective date of registration: 20200521 Address after: 361000 room 3194, Xuanye building, Chuangyuan, torch high tech Zone, Xiamen City, Fujian Province Patentee after: Xiamen Shockley Energy Technology Co.,Ltd. Address before: 100083 No. 35, Qinghua East Road, Beijing, Haidian District Patentee before: Institute of Semiconductors, Chinese Academy of Sciences |
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Effective date of registration: 20231019 Address after: Room 301E, South Building, Weiye Building, Entrepreneurship Park, Xiamen Torch High tech Zone, Xiamen, Fujian Province, 361000 Patentee after: Xiamen purple silicon semiconductor technology Co.,Ltd. Address before: Room 3194, Xuanye Building, Entrepreneurship Park, Torch High tech Zone, Xiamen City, Fujian Province, 361000 Patentee before: Xiamen Shockley Energy Technology Co.,Ltd. |