CN110265486A - 氧化镓sbd终端结构及制备方法 - Google Patents

氧化镓sbd终端结构及制备方法 Download PDF

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CN110265486A
CN110265486A CN201910537853.1A CN201910537853A CN110265486A CN 110265486 A CN110265486 A CN 110265486A CN 201910537853 A CN201910537853 A CN 201910537853A CN 110265486 A CN110265486 A CN 110265486A
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gallium oxide
metal layer
layer
terminal structure
anode metal
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CN110265486B (zh
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吕元杰
王元刚
周幸叶
谭鑫
宋旭波
邹学锋
梁士雄
冯志红
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CETC 13 Research Institute
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Abstract

本发明适用于半导体器件制造技术领域，提供了一种氧化镓SBD终端结构，自下至上包括阴极金属层、N+高浓度衬底层、N‑低浓度Ga2O3外延层和阳极金属层，其中，N‑低浓度Ga2O3外延层在靠近阳极金属层的一定厚度范围内，阳极金属层下方的掺杂浓度大于阳极金属层两侧的掺杂浓度。即只改变阳极金属层对应区域以外部分的掺杂浓度，从而保证在低导通电阻的情况下，提高氧化镓SBD终端结构的击穿电压。

Description

氧化镓SBD终端结构及制备方法
技术领域
本发明属于半导体器件制造技术领域，尤其涉及一种氧化镓SBD终端结构及制备方法。
背景技术
电力电子器件又称为功率半导体器件主要用于电力设备的电能变化和电路控制，是工业设施、家用电器等设备电能控制与转换的核心器件，可以进行典型的功率处理，包括变频、变压、变流、功率管理等。硅基半导体功率器件是目前电力系统使用最普遍的功率器件，但其性能已接近由其材料决定的理论极限，使得其功率密度的增长呈饱和趋势。
超宽禁带氧化镓作为一种新的半导体材料，在击穿场强、巴利加优值和成本等方面优势突出，目前共发现α、β、γ、δ、ε五种氧化镓的结晶形态，其中，以β结构的氧化镓最为稳定，目前为止在半导体领域围绕氧化镓的研究都是在β结构的氧化镓上展开的；国际上通常采用巴利加优值来表征材料适合功率器件的程度，β-Ga2O3材料的巴利加优值是第一代半导体Si材料的3444倍，第三代宽禁带半导体GaN材料的4倍、SiC材料的10倍，β-Ga2O3功率器件与GaN和SiC器件相同耐压情况下，导通电阻更低，功耗更小，能够极大地降低器件工作时的电能损耗。
镜像力致势垒降低效应是限制氧化镓SBD(Schottky Barrier Diode，肖特基势垒二极管)特性的瓶颈问题，利用等离子处理工艺降低漂移区浓度可以缓解镜像力致势垒降低效应和提高器件击穿电压，通过引入Ar离子注入，使阳极结以外区域变成高阻区，调节阳极电场，提高击穿电压。然而，Ar离子注入对材料损伤大且影响击穿电压的进一步提升，如何在保证低导通电阻的情况下进一步提高击穿电压成为亟待解决的问题。
发明内容
有鉴于此，本发明实施例提供了一种氧化镓SBD终端结构及制备方法，以解决现有技术中在保证低导通电阻的情况下进一步提高击穿电压的问题。
为了实现上述目的，本发明实施例的第一方面提供了一种氧化镓SBD终端结构：自下至上包括阴极金属层、N+高浓度衬底层、N-低浓度Ga2O3外延层和阳极金属层，其中，N-低浓度Ga2O3外延层在靠近阳极金属层的一定厚度范围内，阳极金属层下方的掺杂浓度大于阳极金属层两侧的掺杂浓度。
进一步地，所述N-低浓度Ga2O3外延层在靠近阳极金属层的一定厚度范围内，掺杂浓度自下至上逐渐减小。
进一步地，所述N-低浓度Ga2O3外延层的电子浓度为1.0×1015cm-3至1.0×1020cm-3。
进一步地，所述N-低浓度Ga2O3外延层的厚度为100nm至50μm。
进一步地，所述N+高浓度衬底层的材料为Ga2O3或SiC。
进一步地，所述阳极金属层为Ni/Au，所述阴极金属层为Ti/Au。
本发明实施例的第二方面提供了一种一种氧化镓SBD终端结构的制备方法，包括：
在N+高浓度衬底层上生长N-低浓度Ga2O3外延层；
在所述N-低浓度Ga2O3外延层上淀积掩膜层；
去除掩膜层与阳极金属层对应的区域以外的部分，得到氧化镓SBD终端样品；
对所述氧化镓SBD终端样品进行含至少两种温度的高温退火处理；
去除经过高温退火处理后的氧化镓SBD终端样品上的掩膜层，并在氧化镓SBD终端样品的两侧分别形成阳极金属层和阴极金属层。
进一步地，所述掩膜层材料为采用PECVD或者溅射方式实现的SiO2、SiN或者Al2O3。
进一步地，所述高温退火处理在氧气氛围中进行。
进一步地，所述高温退火处理的温度变化方式为线性或者阶梯状变化。
进一步地，所述退火温度为200℃至900℃中的任意值，退火时间为10秒至100分钟。
进一步地，所述退火温度为400℃和450℃，每种温度下的退火时间均为10分钟。
本发明实施例通过在N-低浓度Ga2O3外延层上淀积掩膜层，并去除掩膜层与阳极金属层对应的区域以外的部分，得到一个只有阳极金属层对应区域覆盖有掩膜层的氧化镓SBD终端样品，对此样品进行退火处理，可以只使掩膜层与阳极金属层对应区域以外的部分形成掺杂浓度由下至上的逐渐减小的变化，而不改变阳极金属层对应区域的掺杂浓度，从而实现在低导通电阻的情况下，提高氧化镓SBD终端结构的击穿电压。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1是本发明实施例提供的氧化镓SBD终端结构示意图；
图2是本发明实施例提供的氧化镓SBD终端结构制备方法的流程图；
图3是本发明实施例提供的氧化镓SBD终端结构淀积掩膜层的结构示意图；
图4是本发明实施例提供的氧化镓SBD终端样品进行退火处理后的结构示意图。
图中：1、阴极金属层；2、N+高浓度衬底层；3、N-低浓度Ga2O3外延层；31、第二N-低浓度Ga2O3外延层；3’、掩膜层；4、阳极金属层。
具体实施方式
以下描述中，为了说明而不是为了限定，提出了诸如特定系统结构、技术之类的具体细节，以便透彻理解本发明实施例。然而，本领域的技术人员应当清楚，在没有这些具体细节的其它实施例中也可以实现本发明。在其它情况中，省略对众所周知的系统、装置、电路以及方法的详细说明，以免不必要的细节妨碍本发明的描述。
为了说明本发明所述的技术方案，下面通过具体实施例来进行说明。
如图1所示，氧化镓SBD终端结构包括阴极金属层1、N+高浓度衬底层2、N-低浓度Ga2O3外延层3和阳极金属层4，其中N-低浓度Ga2O3外延层3在靠近阳极金属层4的一定厚度范围内，阳极金属层下方的掺杂浓度大于阳极金属层两侧的掺杂浓度。
具体地，第二N-低浓度Ga2O3外延层31属于N-低浓度Ga2O3外延层3，为靠近阳极金属层的一定厚度范围内，阳极金属层对应区域以外的部分，第二N-低浓度Ga2O3外延层31的掺杂浓度小于阳极金属层对应区域的掺杂浓度。
在上述实施例的基础上：
作为一种优选的实施例，N-低浓度Ga2O3外延层的电子浓度为1.0×1015cm-3至1.0×1020cm-3。
具体的，N-低浓度Ga2O3外延层3的掺杂浓度可以为一个固定值，也可以是一个梯度变化的值。
作为一种优选的实施例，N-低浓度Ga2O3外延层3的厚度为100nm至50μm。
作为一种优选的实施例，N+高浓度衬底层2的材料为Ga2O3或SiC。
作为一种优选的实施例，阳极金属层为Ni/Au，所述阴极金属层为Ti/Au。
如图2所示，本发明中公开了一种氧化镓SBD终端结构的制备方法，包括
步骤S101，在N+高浓度衬底层上生长N-低浓度Ga2O3外延层；
步骤S102，如图3所示，在所述N-低浓度Ga2O3外延层上淀积掩膜层3’；
作为一种优选的实施例，所述掩膜层材料为采用PECVD或者溅射方式实现的SiO2、SiN或者Al2O3。
具体的，所述掩膜层的厚度为50nm至3000nm。
步骤S103，去除掩膜层与阳极金属层对应的区域以外的部分，得到氧化镓SBD终端样品；
具体的，可以在阳极金属层对应的区域涂覆上一层光刻胶，然后再采用干法或湿法刻蚀的方式去除阳极金属层对应的区域以外的部分的掩膜层。
步骤S104，如图4所示，对所述氧化镓SBD终端样品进行含至少两种温度的高温退火处理；
具体的，由于阳极金属层对应的N-低浓度Ga2O3外延层上表面淀积有掩膜层3’，因此退火处理会使与阳极金属层对应的区域以外的部分的掺杂浓度在靠近阳极金属层的一定厚度范围内，由下至上逐渐减小；而退火处理并没有改变阳极金属层对应的区域的掺杂浓度，即阳极金属层下方为未进行退火处理区域，这样就在靠近阳极金属层的一定厚度范围内的N-低浓度Ga2O3外延层中引入了横向浓度变化，从而使整体氧化镓SBD终端结构的导通电阻更低。
其中，两个不同温度的退火处理会导致N-低浓度Ga2O3外延层的表面区域掺杂浓度降低，从而实现掺杂浓度自下至上，从内部到表面逐渐减小。
步骤S105，去除经过高温退火处理后的氧化镓SBD终端样品上的掩膜层，并在氧化镓SBD终端样品的两侧分别形成阳极金属层和阴极金属层。
作为一种优选的实施例，高温退火处理在氧气氛围中进行。
作为一种优选的实施例，高温退火处理的温度变化方式为线性或者阶梯状变化。
其中，温度变化可以是先高温后低温，也可以是先低温后高温。
作为一种优选的实施例，退火温度为200℃至900℃中的任意值，退火时间为10秒至100分钟。
作为一种优选的实施例，所述退火温度为400℃和450℃，每种温度下的退火时间均为10分钟。
以上所述实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围，均应包含在本发明的保护范围之内。

Claims (12)

1.一种氧化镓SBD终端结构，其特征在于，自下至上包括阴极金属层、N+高浓度衬底层、N-低浓度Ga2O3外延层和阳极金属层，其中，N-低浓度Ga2O3外延层在靠近阳极金属层的一定厚度范围内，阳极金属层下方的掺杂浓度大于阳极金属层两侧的掺杂浓度。
2.如权利要求1所述的氧化镓SBD终端结构，其特征在于，所述N-低浓度Ga2O3外延层在靠近阳极金属层的一定厚度范围内，掺杂浓度自下至上逐渐减小。
3.如权利要求1所述的氧化镓SBD终端结构，其特征在于，所述N-低浓度Ga2O3外延层的电子浓度为1.0×1015cm-3至1.0×1020cm-3。
4.如权利要求1所述的氧化镓SBD终端结构，其特征在于，所述N-低浓度Ga2O3外延层的厚度为100nm至50μm。
5.如权利要求1所述的氧化镓SBD终端结构，其特征在于，所述N+高浓度衬底层的材料为Ga2O3或SiC。
6.如权利要求1至5任一项所述的氧化镓SBD终端结构，其特征在于，所述阳极金属层为Ni/Au，所述阴极金属层为Ti/Au。
7.一种氧化镓SBD终端结构的制备方法，其特征在于，包括以下步骤：
在N+高浓度衬底层上生长N-低浓度Ga2O3外延层；
在所述N-低浓度Ga2O3外延层上淀积掩膜层；
去除掩膜层与阳极金属层对应的区域以外的部分，得到氧化镓SBD终端样品；
对所述氧化镓SBD终端样品进行含至少两种温度的高温退火处理；
去除经过高温退火处理后的氧化镓SBD终端样品上的掩膜层，并在氧化镓SBD终端样品的两侧分别形成阳极金属层和阴极金属层。
8.如权利要求7所述的氧化镓SBD终端结构的制备方法，其特征在于，所述掩膜层材料为采用PECVD或者溅射方式实现的SiO2、SiN或者Al2O3。
9.如权利要求7所述的氧化镓SBD终端结构的制备方法，其特征在于，所述高温退火处理在氧气氛围中进行。
10.如权利要求7所述的氧化镓SBD终端结构的制备方法，其特征在于，所述高温退火处理的温度变化方式为线性或者阶梯状变化。
11.如权利要求7至10任一项所述的氧化镓SBD终端结构的制备方法，其特征在于，所述退火温度为200℃至900℃中的任意值，退火时间为10秒至100分钟。
12.如权利要求11所述的氧化镓SBD终端结构的制备方法，其特征在于，所述退火温度为400℃和450℃，每种温度下的退火时间均为10分钟。
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