SG11201603012SA - Group-iii nitride semiconductor device and manufacturing method therefor - Google Patents

Group-iii nitride semiconductor device and manufacturing method therefor

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Publication number
SG11201603012SA
SG11201603012SA SG11201603012SA SG11201603012SA SG11201603012SA SG 11201603012S A SG11201603012S A SG 11201603012SA SG 11201603012S A SG11201603012S A SG 11201603012SA SG 11201603012S A SG11201603012S A SG 11201603012SA SG 11201603012S A SG11201603012S A SG 11201603012SA
Authority
SG
Singapore
Prior art keywords
manufacturing
group
semiconductor device
nitride semiconductor
iii nitride
Prior art date
Application number
SG11201603012SA
Other languages
English (en)
Inventor
Kai Cheng
Original Assignee
Enkris Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enkris Semiconductor Inc filed Critical Enkris Semiconductor Inc
Publication of SG11201603012SA publication Critical patent/SG11201603012SA/en

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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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    • H01L29/66409—Unipolar field-effect transistors
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    • H01L29/66522—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with an active layer made of a group 13/15 material

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)
SG11201603012SA 2013-10-15 2014-10-14 Group-iii nitride semiconductor device and manufacturing method therefor SG11201603012SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201310482857.7A CN103500763B (zh) 2013-10-15 2013-10-15 Ⅲ族氮化物半导体器件及其制造方法
PCT/CN2014/088538 WO2015055108A1 (zh) 2013-10-15 2014-10-14 Ⅲ族氮化物半导体器件及其制造方法

Publications (1)

Publication Number Publication Date
SG11201603012SA true SG11201603012SA (en) 2016-05-30

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SG11201603012SA SG11201603012SA (en) 2013-10-15 2014-10-14 Group-iii nitride semiconductor device and manufacturing method therefor

Country Status (7)

Country Link
US (1) US10516042B2 (ja)
EP (1) EP3059757B1 (ja)
JP (1) JP6244019B2 (ja)
KR (1) KR101902663B1 (ja)
CN (1) CN103500763B (ja)
SG (1) SG11201603012SA (ja)
WO (1) WO2015055108A1 (ja)

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CN105336789A (zh) * 2015-10-29 2016-02-17 中山大学 一种高质量MIS结构的GaN基场效应晶体管及其制备方法
CN107230620A (zh) * 2016-03-25 2017-10-03 北京大学 氮化镓晶体管的制备方法
JP6772579B2 (ja) * 2016-06-23 2020-10-21 富士通株式会社 半導体装置及び半導体装置の製造方法
CN107785243B (zh) * 2016-08-26 2023-06-20 住友电工光电子器件创新株式会社 形成氮化物半导体层的工艺
TWI612662B (zh) * 2017-01-09 2018-01-21 國立臺灣師範大學 半導體裝置及其製造方法
WO2019009006A1 (ja) * 2017-07-07 2019-01-10 パナソニック株式会社 半導体装置
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CN113614274A (zh) 2019-03-22 2021-11-05 应用材料公司 用于沉积具有超导膜的多层器件的方法及装置
KR102691924B1 (ko) 2019-03-22 2024-08-05 어플라이드 머티어리얼스, 인코포레이티드 금속 질화물들의 증착을 위한 방법 및 장치
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CN114616678A (zh) * 2019-11-26 2022-06-10 苏州晶湛半导体有限公司 半导体结构及其制作方法
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