JP2022525635A - 金属窒化物の堆積のための方法及び装置 - Google Patents
金属窒化物の堆積のための方法及び装置 Download PDFInfo
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- JP2022525635A JP2022525635A JP2021556225A JP2021556225A JP2022525635A JP 2022525635 A JP2022525635 A JP 2022525635A JP 2021556225 A JP2021556225 A JP 2021556225A JP 2021556225 A JP2021556225 A JP 2021556225A JP 2022525635 A JP2022525635 A JP 2022525635A
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Abstract
Description
ここで図2を参照すると、物理的気相堆積(PVD)リアクタ100は、真空チャンバ110を含む。チャンバ110は、側壁112、床114、及び天井116を含む、チャンバ壁によって囲まれている。ワークピース支持体120、例えば、ペデスタル又はサセプタは、チャンバ110の内部に位置決めされ得る。ワークピース支持体120は、チャンバ110内のワークピース10を支持する上面120aを有する。支持体120は、床114の上に上昇する。
ワークピース処理ツール100は、ワークピース上に窒化ニオブ、特にδ相NbNの堆積を実施するのに利用され得る。一例では、ワークピース110は、窒化ニオブが上に堆積される緩衝層、例えば窒化アルミニウムを含む。
図5は、超電導材料として使用するための金属窒化物層226を含むデバイス220中のいくつかの層の概略図である。デバイス220は、超電導ナノワイヤ単一光子検出器(SNSPD)、超電導量子干渉デバイス(SQUID)、量子コンピュータ中の回路等であり得る。図6は、層の製造方法のフローチャートである。
上記のとおり、堆積に使用されるツールからワークピースを除去することは、汚染又は酸化をもたらし、それにより、臨界温度を低下させ得る。
コントローラ、例えばコントローラ190及び/又はコントローラ150は、デジタル電子回路において、又はコンピュータのソフトウェア、ファームウェア、若しくはハードウェアにおいて、又はそれらの組み合わせにおいて、実装され得る。コントローラは、一又は複数のプロセッサを含み得る。例えば、コントローラは分散システムであり得る。一又は複数のコンピュータプログラム製品(すなわち、機械可読記憶媒体において有形に具現化された一又は複数のコンピュータプログラム製品)は、コントローラ(例えば、プログラマブルプロセッサ、コンピュータ、又は複数のプロセッサ若しくはコンピュータ)によって実行され得る、又はその動作を制御し得る。コンピュータプログラム(プログラム、ソフトウェア、ソフトウェアアプリケーション又はコードとしても既知である)は、コンパイル型言語又はインタプリタ型言語を含む任意の形態のプログラミング言語で書かれてよく、かつ、スタンドアローンプログラムとして、又はモジュール、コンポーネント、サブルーチン、若しくはコンピューティング環境での使用に適するその他のユニットとして含め、任意の形態でデプロイされ得る。コンピュータプログラムは、必ずしもファイルに対応しているわけではない。プログラムは、他のプログラム又はデータを保持するファイルの一部分に、当該プログラム専用の単一のファイルに、又は、複数の連携ファイル(例えば、一又は複数のモジュール、サブプログラム、又はコードの部分を記憶する複数のファイル)に記憶され得る。コンピュータプログラムは、1つのコンピュータで若しくは一箇所にある複数のコンピュータで実行されるようデプロイされても、複数箇所にわたって分散配置されて通信ネットワークによって相互接続されてもよい。
Claims (15)
- 金属窒化物層を含む構造体をワークピース上に形成する方法であって、
金属ターゲットを含むチャンバ内に前記ワークピースを配置する前に、窒素ガス及び不活性ガスを第1の流量比で前記チャンバ内へ流して、前記チャンバ内のプラズマを点火することにより、前記チャンバを事前調整することと、
前記事前調整後に、前記チャンバを排気することと、
前記事前調整後に、前記チャンバ内のワークピース支持体上に前記ワークピースを配置することと、
窒素ガス及び前記不活性ガスを第2の流量比で前記チャンバ内に流して、前記チャンバ内のプラズマを点火することによって、前記チャンバ内の前記ワークピース上に金属窒化物層の物理的気相堆積を実施することであって、前記第2の流量比が前記第1の流量比よりも小さい、物理的気相堆積を実施することと、
を含む、方法。 - 前記金属ターゲットがニオブ又はニオブ合金を含み、前記金属窒化物層が窒化ニオブ又はニオブ合金窒化物を含む、請求項1に記載の方法。
- 前記第2の流量比が、前記第1の流量比よりも2-30%小さい、請求項1に記載の方法。
- 前記第1の流量比が4:100から1:1であり、前記第2の流量比が3:100から48:52である、請求項1に記載の方法。
- 前記チャンバを事前調整することが、シャッタディスクを前記基板支持体上に配置することを含む、請求項1に記載の方法。
- 事前調整することが、前記シャッタディスクをある温度に加熱することを含み、物理的気相堆積を実施することが、前記ワークピースを同じ温度に加熱することを含む、請求項5に記載の方法。
- 前記温度が200-500℃である、請求項6に記載の方法。
- 事前調整においてプラズマを点火することと、堆積においてプラズマを点火することとが、同じ電力レベルを使用する、請求項6に記載の方法。
- 物理的気相堆積システムであって、
チャンバを形成するチャンバ壁と、
前記チャンバ内にワークピースを保持するための支持体と、
前記チャンバを排気するための真空ポンプと、
窒素ガス及び不活性ガスを前記チャンバへ送達するためのガス供給部と、
金属ターゲットを支持するための電極と、
前記電極に電力を印加するための電源と、
コントローラであって、
上に金属窒化物層が堆積されるワークピースが前記チャンバ内に配置される前に、ガス源が窒素ガス及び前記不活性ガスを第1の流量比でチャンバ内へ流すよう、かつ電源が前記チャンバ内のプラズマを点火するのに十分な電力を印加して、前記チャンバを事前調整するよう、構成されており、かつ
前記ワークピースがチャンバ内に配置された後に、前記ガス源が窒素ガス及び前記不活性ガスを第2の流量比でチャンバ内へ流すよう、かつ電源が前記チャンバ内のプラズマを点火するのに十分な電力を印加して、物理的気相堆積によって前記ワークピース上に金属窒化物層を堆積させるよう、構成されており、前記第2の流量比が第1の流量比よりも小さい、
コントローラと、
を含む、システム。 - 前記チャンバ内のプラズマにおける少なくとも窒素イオン濃度を測定するための光学センサを含む、請求項9に記載のシステム。
- 前記センサが前記チャンバの外側に位置決めされ、前記チャンバ壁が、前記センサに前記チャンバへの光学的アクセスを提供するための窓を含む、請求項10に記載のシステム。
- 前記チャンバ内に位置決めされているスパッタシールドをさらに含み、前記シールドが、前記センサに前記プラズマへの明確な見通し線を提供するための開口部を有する、請求項11に記載のシステム。
- 前記第2の流量比が、前記第1の流量比よりも2から30%小さい、請求項9に記載のシステム。
- 前記第1の流量比が4:100から1:1であり、前記第2の流量比が3:100から48:52である、請求項13に記載のシステム。
- 前記チャンバの事前調整のために、前記チャンバ内にシャッタディスクを位置決めするように構成されているロボットを含む、請求項9に記載のシステム。
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