WO2020027152A1 - 基板を処理する方法、処理装置、および、処理システム - Google Patents
基板を処理する方法、処理装置、および、処理システム Download PDFInfo
- Publication number
- WO2020027152A1 WO2020027152A1 PCT/JP2019/029885 JP2019029885W WO2020027152A1 WO 2020027152 A1 WO2020027152 A1 WO 2020027152A1 JP 2019029885 W JP2019029885 W JP 2019029885W WO 2020027152 A1 WO2020027152 A1 WO 2020027152A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film
- processing
- etching
- substrate
- layer
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 187
- 238000000034 method Methods 0.000 title claims abstract description 96
- 239000000758 substrate Substances 0.000 title claims abstract description 92
- 238000005530 etching Methods 0.000 claims abstract description 141
- 239000007789 gas Substances 0.000 claims abstract description 77
- 239000007772 electrode material Substances 0.000 claims abstract description 53
- 239000000463 material Substances 0.000 claims abstract description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 16
- 239000001301 oxygen Substances 0.000 claims abstract description 16
- 230000008569 process Effects 0.000 claims description 47
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 238000005240 physical vapour deposition Methods 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000012546 transfer Methods 0.000 description 43
- 230000008859 change Effects 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 230000032258 transport Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 239000002826 coolant Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- 229910019236 CoFeB Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000011819 refractory material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3476—Testing and control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Definitions
- Exemplary embodiments of the present disclosure relate to a method, a processing apparatus, and a processing system for processing a substrate.
- Patent Literature 1 discloses a technique relating to a plasma processing method and a plasma processing apparatus.
- the technique disclosed in Patent Literature 1 discloses a technique in which a first layer made of a conductor made of a difficult-to-etch material, a second layer made of an insulator, and a third layer made of a conductor are sequentially stacked. This is a method of performing a plasma etching process using a mask.
- a method for processing a substrate includes an etching layer and a mask.
- the mask is provided on the first surface of the etching layer.
- the method includes a first step, a second step, and a third step.
- the first step is to form a first film on a second surface of the mask.
- a second film having a material for the etching layer is formed on the first film by etching the first surface of the etching layer.
- the first film and the second film are removed by exposing the substrate after the second step to plasma of the processing gas.
- the first film has an electrode material.
- the processing gas has oxygen.
- FIG. 4 illustrates a method according to one exemplary embodiment.
- FIG. 1 illustrates a processing system according to one example embodiment.
- FIG. 2 is a diagram illustrating a plasma processing apparatus according to one exemplary embodiment.
- FIG. 4 is a diagram showing functions of a control unit shown in each of FIGS. 2 and 3.
- FIG. 2 is a diagram illustrating a processing flow according to the method illustrated in FIG. 1 by a cross-sectional view of a substrate.
- FIG. 2 is a diagram illustrating an example of a configuration of a substrate to which the method illustrated in FIG. 1 is applied.
- a method for processing a substrate includes an etching layer and a mask.
- the mask is provided on the first surface of the etching layer.
- the method includes a first step, a second step, and a third step.
- the first step is to form a first film on a second surface of the mask.
- a second film having a material for the etching layer is formed on the first film by etching the first surface of the etching layer.
- the first film and the second film are removed by exposing the substrate after the second step to plasma of the processing gas.
- the first film has an electrode material.
- the processing gas has oxygen.
- the substrate is exposed to a plasma of a processing gas containing oxygen, so that a first film of the electrode material is deposited on the first film and a second film having the material of the etching layer is provided.
- a first film of the electrode material is deposited on the first film and a second film having the material of the etching layer is provided.
- it can be suitably peeled from the second surface of the mask.
- a change in the CD (Critical Dimension) of the mask shape can be sufficiently suppressed while the mask remaining film is sufficiently maintained. Therefore, it is possible to avoid a situation in which a film containing the material of the etching layer is formed on the second surface of the mask by the etching of the etching layer, so that fine etching processing becomes difficult.
- the etching layer comprises an electrode material layer, wherein the electrode material layer extends to the first surface.
- the electrode material layer is etched, and a first film is formed by sputtering the material of the electrode material layer.
- the first film of the electrode material is formed by etching the etching layer, and the etching of the etching layer and the formation of the first film are both performed in the first step. Therefore, the processing can be simplified.
- the first step forms a first film by chemical vapor deposition or physical vapor deposition.
- the first film can be formed by a film forming process by chemical vapor deposition or physical vapor deposition, the timing of forming the first film can be adjusted relatively flexibly.
- a series of first, second, and third steps is repeatedly performed. Therefore, maintenance of the mask residual film and suppression of a change in the CD of the mask shape can be more remarkably realized.
- the etch layer includes a magnetic tunnel junction region.
- the magnetic tunnel junction region has a refractory material, the above-described exemplary embodiments can be applied to the etching layer having the magnetic tunnel junction region of the refractory material.
- the first film comprises a ruthenium or carbon electrode material.
- the electrode material of the first film may be a ruthenium or carbon electrode material, the formation of the first film is relatively easily performed.
- a processing apparatus for processing a substrate includes a processing container configured to receive the substrate, and a control unit configured to control the processing device.
- the control unit includes a first film forming unit, a second film forming unit, and a film removing unit.
- the first film forming unit is configured to use the first film having the electrode material as a mask when the substrate housed in the processing container includes the etching layer and the mask and the mask is provided on the first surface of the etching layer. It is configured to control the processing device to form on the second surface.
- the second film forming unit forms the second film having the material of the etching layer on the first film by etching the first surface of the etching layer after the formation of the first film by the first film forming unit. It is configured to control the processing device.
- the film removing unit controls the processing apparatus to remove the first film and the second film by exposing the substrate on which the second film is formed by the second film forming unit to a plasma of a processing gas having oxygen. It is configured as follows.
- the substrate is exposed to a plasma of a processing gas containing oxygen, so that a first film of the electrode material is deposited on the first film and a second film having the material of the etching layer is provided.
- a first film of the electrode material is deposited on the first film and a second film having the material of the etching layer is provided.
- it can be suitably peeled from the second surface of the mask. Therefore, in the etching of the etching layer, a change in the CD of the mask shape can be sufficiently suppressed while the mask remaining film is sufficiently maintained. Therefore, it is possible to avoid a situation in which a film containing the material of the etching layer is formed on the second surface of the mask by the etching of the etching layer, so that fine etching processing becomes difficult.
- the first film forming unit etches the electrode material layer and sputters the material of the electrode material layer when the etching layer includes the electrode material layer and the electrode material layer extends to the first surface.
- the first film of the electrode material is formed by etching the etching layer, and the etching of the etching layer and the formation of the first film are both performed by the first film forming unit. Therefore, the processing can be simplified.
- a processing system for processing a substrate includes a film forming apparatus configured to perform a film forming process on the substrate, an etching apparatus configured to perform an etching process on the substrate, and a control unit configured to control the processing system.
- the control unit includes a first film forming unit, a second film forming unit, and a film removing unit.
- the first film forming unit is configured to use the first film having the electrode material as a mask when the substrate accommodated in the film forming apparatus includes an etching layer and a mask, and the mask is provided on the first surface of the etching layer.
- the processing system is configured to control the formation of the second surface.
- the second film forming part transfers the second film having the material of the etching layer by transferring the substrate to the etching device and etching the first surface of the etching layer after the formation of the first film by the first film forming part. It is configured to control the processing system to form on one film.
- the film removing unit controls the processing system to remove the first film and the second film by exposing the substrate on which the second film is formed by the second film forming unit to a plasma of a processing gas having oxygen. It is configured as follows.
- the substrate is exposed to a plasma of a processing gas containing oxygen, so that a first film of the electrode material is deposited on the first film and a second film having the material of the etching layer is provided.
- a first film of the electrode material is deposited on the first film and a second film having the material of the etching layer is provided.
- it can be suitably peeled from the second surface of the mask. Therefore, in the etching of the etching layer, a change in the CD of the mask shape can be sufficiently suppressed while the mask remaining film is sufficiently maintained. Therefore, it is possible to avoid a situation in which a film containing the material of the etching layer is formed on the second surface of the mask by the etching of the etching layer, so that fine etching processing becomes difficult.
- the first film forming unit is configured to control the processing system to form the first film by chemical vapor deposition or physical vapor deposition.
- the timing of forming the first film can be adjusted relatively flexibly.
- the method MT shown in FIG. 1 is an exemplary embodiment of a method for processing a substrate.
- the method MT may be performed by the processing system 1 shown in FIG.
- the processing system 1 can be used for performing the method MT shown in FIG.
- the processing system 1 includes a carrier mounting port 11, an atmosphere transfer chamber 120, a load lock module LLM1, and a load lock module LLM2.
- the processing system 1 includes a vacuum transfer chamber 13, a processing module PM1, a processing module PM2, a processing module PM3, and a processing module PM4.
- the atmosphere transfer chamber 120, the load lock module LLM1, and the load lock module LLM2 are interconnected via a door valve G2 while maintaining airtightness.
- the load lock module LLM1, the load lock module LLM2, and the transfer arm 131 are interconnected via a gate valve G3 while maintaining airtightness.
- the transfer arm 131 and the processing modules PM1 to PM4 are connected to each other while maintaining airtightness via a gate valve G4.
- the carrier container C is placed on the carrier mounting port 11.
- the carrier mounting port 11 corresponds to a carry-in port of the transport container C.
- the transfer container C stores a plurality of substrates W.
- the transfer container C is connected to the atmospheric transfer chamber 120 via the door G1.
- the atmospheric transfer chamber 120 transfers the substrate W taken out of the transfer container C under an atmospheric atmosphere.
- a transfer arm 121 is provided in the atmospheric transfer chamber 120.
- the transfer arm 121 can freely rotate, expand, contract, move up and down, and move left and right.
- the transport arm 121 takes out the substrates W one by one from the transport container C and transports the taken out substrates W.
- An alignment chamber 120 a is provided on a side surface of the atmospheric transfer chamber 120.
- the alignment chamber 120a has a built-in orienter for aligning the substrate W.
- Each of the load lock module LLM1 and the load lock module LLM2 is connected to the atmospheric transfer chamber 120 via a door valve G2.
- Each of the load lock module LLM1 and the load lock module LLM2 switches the internal state between the air atmosphere and the preliminary vacuum atmosphere, and waits for the substrate W.
- Both the load lock module LLM1 and the load lock module LLM2 are arranged so as to connect between the atmospheric transfer chamber 120 and the vacuum transfer chamber 13.
- a vacuum pump and a leak valve are connected to each of the load lock module LLM1 and the load lock module LLM2.
- the vacuum pump and the leak valve switch the inside of each of the load lock module LLM1 and the load lock module LLM2 between the atmospheric atmosphere and the vacuum atmosphere.
- Each of the load lock module LLM1 and the load lock module LLM2 is provided with a mounting table LS.
- the mounting table LS mounts the loaded substrate W.
- a vacuum transfer chamber 13 is connected to each of the load lock modules LLM1 and LLM2 via a gate valve G3.
- the vacuum transfer chamber 13 transfers the substrate W under a vacuum atmosphere.
- Processing modules PM1 to PM4 are connected to the vacuum transfer chamber 13 via a gate valve G4.
- a vacuum pump (not shown) for maintaining the inside of the vacuum transfer chamber 13 in a vacuum atmosphere is connected to the vacuum transfer chamber 13.
- a transfer arm 131 is provided in the vacuum transfer chamber 13.
- the transfer arm 131 can rotate and expand and contract freely.
- the transfer arm 131 transfers the substrate W between the load lock modules LLM1 and LLM2 and the processing modules PM1 to PM4.
- Each of the processing modules PM1 to PM4 executes a process processing on the substrate W.
- Each of the processing modules PM1 to PM4 includes a processing container PS configured to house the substrate W.
- the process processing is performed on the substrate W accommodated in the processing container PS.
- the process may be, for example, an etching process, a film forming process, or the like.
- Each of the processing modules PM1 to PM4 can execute, for example, different types of processing on the substrate W.
- the processing module PM1 may be each of the film forming apparatuses configured to perform a film forming process on the substrate W disposed in the processing container PS.
- the processing module PM1 (film forming apparatus) may be the plasma processing apparatus 10 illustrated in FIG.
- the processing module PM2 may be an etching apparatus configured to perform an etching process on the substrate W disposed in the processing container PS.
- the processing module PM2 etching apparatus
- the processing module PM2 can be the plasma processing apparatus 10 shown in FIG.
- the processing system 1 includes a control unit Cnt.
- the control unit Cnt is configured to totally control the operation of each unit (the transfer arm 121 shown in FIG. 2, the processing modules PM1 to PM4, etc.) of the processing system 1.
- the control unit Cnt can be physically configured as a computer device including a processor, a memory, a storage, a communication device, a bus, and the like (not shown).
- the processor of the control unit Cnt includes a CPU, a memory, and the like.
- each unit of the processing system 1 is realized by causing the processor to read a computer program (for example, a program for executing the method MT shown in FIG. 1) stored in a storage or the like into the processor and the memory, and executing the computer program. Is done.
- a computer program for example, a program for executing the method MT shown in FIG. 1
- the processing operation of the substrate W by the processing system 1 described above will be schematically described.
- the substrate W stored in the transfer container C on the carrier mounting port 11 is taken out by the transfer arm 121 and positioned in the alignment chamber 120 a while being transferred in the atmospheric transfer chamber 120. After the positioning, the substrate W is transferred to one of the load lock module LLM1 and the load lock module LLM2.
- the inside of each of the load lock module LLM1 and the load lock module LLM2 becomes a preliminary vacuum atmosphere.
- the substrate W is taken out by the transfer arm 131 and transferred into the vacuum transfer chamber 13.
- the substrate W is transferred between the vacuum transfer chamber 13 and the processing modules PM1 to PM4, and undergoes process processing in the processing modules PM1 to PM4.
- the substrate W after the process processing is accommodated in the transport container C through a path (excluding the alignment chamber 120a) opposite to the path at the time of carrying in.
- the plasma processing apparatus 10 can be used for performing the method MT shown in FIG.
- the plasma processing apparatus 10 can be used in any of the processing modules PM1 to PM4 of the processing system 1 shown in FIG.
- FIG. 3 schematically shows the structure of a longitudinal section of the plasma processing apparatus 10.
- the plasma processing apparatus 10 shown in FIG. 3 is a capacitively-coupled plasma processing apparatus.
- the plasma processing apparatus 10 can be used for performing an etching process and a film forming process.
- the etching process and the film forming process can be consistently performed by one apparatus (the plasma processing apparatus 10).
- the etching process and the film forming process can be performed by different processing apparatuses.
- the plasma processing apparatus 10 includes a processing container 12.
- the processing container 12 accommodates the substrate W.
- the processing container 12 has a substantially cylindrical shape.
- the processing container 12 provides the internal space of the processing container 12 as a chamber 12c.
- the processing container 12 is made of, for example, aluminum.
- the processing container 12 is connected to the ground potential.
- a film having plasma resistance is formed on an inner wall surface of the processing container 12, that is, a wall surface defining the chamber 12c.
- This film may be a film formed by anodizing treatment or a film made of ceramics.
- This ceramic film is, for example, a film containing yttrium oxide.
- An opening 12g for transporting the substrate W is provided in the side wall 12s of the processing container 12.
- the opening 12g can be opened and closed by a gate valve 14.
- the support portion 15 extends upward from the bottom of the processing container 12.
- the support portion 15 has a substantially cylindrical shape, and has an insulating material such as quartz.
- a stage 16 is provided in the chamber 12c.
- the stage 16 is configured to support a substrate W mounted on the stage 16.
- the substrate W may have a disk shape like a wafer.
- the stage 16 includes a lower electrode 18 and an electrostatic chuck 20. The stage 16 is supported by the support 15.
- the lower electrode 18 includes a first plate 18a and a second plate 18b.
- the first plate 18a and the second plate 18b include a metal such as aluminum and have a substantially disk shape.
- the second plate 18b is provided on the first plate 18a and is electrically connected to the first plate 18a.
- An electrostatic chuck 20 is provided on the second plate 18b.
- the electrostatic chuck 20 has an insulating layer and an electrode built in the insulating layer.
- a DC power supply 22 is electrically connected to the electrodes of the electrostatic chuck 20 via a switch 23.
- a DC voltage from a DC power supply 22 is applied to the electrodes of the electrostatic chuck 20, the electrostatic chuck 20 generates an electrostatic force.
- the electrostatic chuck 20 attracts the substrate W to the electrostatic chuck 20 by the electrostatic force, and holds the substrate W.
- a focus ring 24 is arranged on the peripheral portion of the second plate 18b so as to surround the edge of the substrate W and the electrostatic chuck 20.
- the focus ring 24 is provided to improve the uniformity of the plasma processing.
- the focus ring 24 includes a material appropriately selected according to the plasma processing, and includes, for example, quartz.
- the substrate W placed on the electrostatic chuck 20 can be controlled using a chiller unit that supplies a coolant to the flow path 18f and a heater power supply HP that supplies power to the temperature control unit HT.
- the channel 18f is provided inside the second plate 18b.
- a coolant is supplied to the flow path 18f from a chiller unit provided outside the processing container 12 via a pipe 26a.
- the refrigerant supplied to the flow path 18f is returned to the chiller unit via the pipe 26b.
- the coolant is supplied to the flow path 18f so as to circulate in the flow path 18f.
- the temperature controller HT is provided on the electrostatic chuck 20.
- the heater power supply HP is connected to the temperature control unit HT.
- the temperature of the electrostatic chuck 20 is adjusted, and the temperature of the substrate W mounted on the electrostatic chuck 20 is adjusted.
- the temperature control unit HT can be embedded in the second plate 18b.
- the temperature control unit HT includes a temperature sensor (not shown), which detects the temperature around the temperature control unit HT and outputs the detection result to the control unit Cnt as a detection signal.
- the temperature detected by the temperature sensor is equal to the temperature of the substrate W placed on the electrostatic chuck 20.
- the plasma processing apparatus 10 is provided with a gas supply line 28.
- the gas supply line 28 supplies a heat transfer gas, for example, He gas, from the heat transfer gas supply mechanism between the upper surface of the electrostatic chuck 20 and the back surface of the substrate W.
- a heat transfer gas for example, He gas
- the plasma processing apparatus 10 further includes an upper electrode 30.
- the upper electrode 30 is provided above the stage 16 and is provided substantially parallel to the lower electrode 18.
- the upper electrode 30 together with the member 32 closes the upper opening of the processing container 12.
- the member 32 has an insulating property.
- the upper electrode 30 is supported above the processing container 12 via a member 32.
- the upper electrode 30 includes a top plate 34 and a support 36.
- the top plate 34 faces the chamber 12c.
- the top plate 34 is provided with a plurality of gas discharge holes 34a.
- the top plate 34 includes, for example, silicon, but is not limited thereto, and may have a structure in which a plasma-resistant film is provided on the surface of an aluminum base material.
- the film may be a ceramic film.
- the ceramic film is a film formed by anodizing treatment, a film containing yttrium oxide, or the like.
- the support 36 detachably supports the top plate 34.
- the support 36 has a conductive material such as aluminum. Inside the support 36, a gas diffusion chamber 36a is provided.
- a plurality of gas holes 36b extend downward from the gas diffusion chamber 36a, and the plurality of gas holes 36b communicate with the plurality of gas discharge holes 34a, respectively.
- the support 36 has a gas inlet 36c for guiding the gas to the gas diffusion chamber 36a, and a gas supply pipe 38 is connected to the gas inlet 36c.
- a gas source group 40 is connected to the gas supply pipe 38 via a valve group 42 and a flow controller group 44.
- the gas source group 40 has a plurality of gas sources.
- the plurality of gas sources include at least one or more rare gas sources, hydrocarbon gas sources, and oxygen-containing gas sources.
- the rare gas source may include an Ar gas source.
- the source of hydrocarbon gas may include, for example, a source of CH 4 gas.
- the source of the gas containing oxygen may include, for example, a source of O 2 gas.
- the valve group 42 includes a plurality of valves.
- the flow controller group 44 includes a plurality of flow controllers such as a mass flow controller.
- the plurality of gas sources of the gas source group 40 are connected to the gas supply pipe 38 via corresponding valves of the valve group 42 and corresponding flow controllers of the flow controller group 44, respectively.
- the plasma processing apparatus 10 can supply gas from one or more gas sources selected from a plurality of gas sources of the gas source group 40 to the chamber 12c at individually adjusted flow rates.
- a baffle plate 48 is provided between the support portion 15 and the side wall 12s of the processing container 12.
- the baffle plate 48 has a configuration in which, for example, a base material made of aluminum is coated with ceramics such as yttrium oxide.
- the baffle plate 48 has a plurality of through holes.
- an exhaust pipe 52 is connected to the bottom of the processing container 12.
- An exhaust device 50 is connected to the exhaust pipe 52.
- the exhaust device 50 has a pressure controller and a vacuum pump such as a turbo molecular pump, and can reduce the pressure in the chamber 12c.
- the plasma processing apparatus 10 includes a first high-frequency power supply 62.
- the first high frequency power supply 62 is a power supply for generating a first high frequency for plasma generation, and generates a high frequency having a frequency within a range of 27 to 100 [MHz], for example, a frequency of 60 [MHz].
- the first high frequency power supply 62 is connected to the upper electrode 30 via the matching unit 63.
- the matching unit 63 has a circuit for matching the output impedance of the first high-frequency power supply 62 with the input impedance on the load side (upper electrode 30 side). Note that the first high-frequency power supply 62 may be connected to the lower electrode 18 via the matching unit 63. When the first high frequency power supply 62 is connected to the lower electrode 18, the upper electrode 30 is connected to the ground potential.
- the plasma processing apparatus 10 includes a second high frequency power supply 64.
- the second high frequency power supply 64 is a power supply that generates a second high frequency for bias for drawing ions into the substrate W.
- the frequency of the second high frequency is lower than the frequency of the first high frequency.
- the frequency of the second high frequency is a frequency in the range of 400 [kHz] to 13.56 [MHz], for example, 400 [kHz].
- the second high frequency power supply 64 is connected to the lower electrode 18 via the matching unit 65.
- the matching unit 65 has a circuit for matching the output impedance of the second high-frequency power supply 64 with the input impedance on the load side (the lower electrode 18 side).
- the control unit Cnt of the plasma processing apparatus 10 is the same as the control unit Cnt of the processing system 1.
- the control unit Cnt of the processing system 1 functions as the control unit Cnt of the plasma processing apparatus 10.
- FIGS. 4, 5 and 6 are referred to.
- the method MT shown in FIG. 1 can be executed when the substrate W has the configuration shown in FIG.
- the substrate W shown in FIG. 5A includes an etching layer EL and a mask MK1 and the like (further, a mask MK2 and the like shown in FIG. 5D), and the mask MK1 and the like have a surface FS1 ( (First surface).
- the surface FS2 (second surface) of the mask MK1 (further, the mask MK2 and the like) extends on the surface FS1.
- the substrate W having the configuration shown in FIG. 5A is used, for example, for manufacturing an MRAM (Magnetoresistive Random Access Memory).
- the substrate W may include a support substrate SW, a region RA, and a region RB, as shown in FIG.
- the region RA corresponds to the etching layer EL
- the region RB corresponds to the mask MK1.
- the etching layer EL has an MTJ (Magnetoresistive Tunnel Junction) region.
- the region RA is provided on the support substrate SW, and the region RB is provided on the region RA.
- the region RA includes layers LY1 to LY16, and the region RB includes layers LY17 to LY20.
- the layers LY1 to LY16 are sequentially stacked on the support substrate SW.
- the layers LY17 to LY20 are sequentially stacked on the region RA (on the layer LY16).
- the support substrate SW has Si (silicon).
- the layer LY1 has SiO 2 (silicon dioxide).
- the layer LY2 has Ta (tantalum).
- the layer LY3 has Ru (ruthenium).
- the layer LY4 has Ta.
- the layer LY5 is a base layer having Pt (platinum).
- the layer LY6 is a magnetic layer having Pt / Co (Co: cobalt).
- the layer LY7 has Co.
- the layer LY8 has Ru.
- the layer LY9 is a magnetic layer having Pt / Co.
- the layer LY10 has Co.
- the layer LY11 has Ta.
- the layer LY12 has CoFeB (Fe: iron, B: boron).
- the layer LY13 has MgO (magnesium oxide).
- the layer LY14 has CoFeB.
- the layer LY15 has Ta.
- the layer LY16 has Ru.
- the layer LY17 includes TiN (titanium nitride).
- the layer LY18 has SiO 2 .
- the layer LY19 has SiC (silicon carbide).
- the layer LY20 is a SOG (Spin On Glass) layer.
- the control unit Cnt that executes the method MT functionally includes a first film forming unit CP1, a second film forming unit CP2, and a film removing unit CP3, as shown in FIG.
- the first film forming unit CP1, the second film forming unit CP2, and the film removing unit CP3 implement the method MT shown in FIG.
- the first film forming unit CP1, the second film forming unit CP2, and the film removing unit CP3 are used regardless of whether the method MT includes the film forming process and the etching process. obtain.
- the single plasma processing apparatus 10 may be used regardless of whether the method MT includes the film forming process and the etching process.
- each of the film forming process and the etching process can be performed by any one of the processing modules PM1 to PM4 of the processing system 1.
- the processing modules PM1 to PM4 include a film forming device and an etching device. Either one or both of the film forming apparatus and the etching apparatus may be the plasma processing apparatus 10.
- the method MT can be performed in a vacuum consistent manner.
- the method MT includes step ST1 (first step), step ST2 (second step), and step ST3 (third step).
- the first film forming unit CP1 is configured to perform Step ST1.
- the second film forming unit CP2 is configured to perform Step ST2.
- the film removing unit CP3 is configured to execute Step ST3.
- the first film F1 is formed on the surface FS2 of the mask MK1.
- the first film F1 has an electrode material.
- the electrode material of the first film F1 includes, for example, Ru or C (carbon).
- the first film F1 can be formed by an etching process in step ST1.
- the material of the electrode material layer ED includes the electrode material of the first film F1.
- the electrode material layer ED extends to the surface FS1 of the etching layer EL.
- Step ST1 is performed on the substrate W accommodated in the processing container 12 of the plasma processing apparatus 10.
- the electrode material layer ED is etched, and the first film F1 is formed on the surface FS2 of the mask MK1 by sputtering the material of the electrode material layer ED.
- the electrode material layer ED is included in the MTJ region, and may be, for example, a Ru layer.
- the etching performed in step ST1 may be RIE (Reactive Ion Etching).
- the gas used for the RIE etching process mainly includes a rare gas (eg, Ar gas), but may include, for example, a CH 4 gas (further, an O 2 gas) together with the rare gas.
- the first film F1 can be formed by a film forming process in step ST1.
- step ST1 is performed on the substrate W accommodated in the processing container 12 of the plasma processing apparatus 10 or the processing container PS of the film forming apparatus (the processing module PM1 or the like) of the processing system 1.
- the first film F1 is formed by CVD (Chemical Vapor Deposition) (chemical vapor deposition) or PVD (Physical Vapor Deposition) (physical vapor deposition).
- step ST2 the second film F2 having the material of the etching layer EL is formed on the first film F1 by etching the surface FS1 of the etching layer EL, as shown in FIG. 5C.
- the second film F2 is formed by an etching process in step ST2.
- step ST1 is performed by the plasma processing apparatus 10
- step ST2 is performed by the plasma processing apparatus 10 in which step ST1 is continuously performed.
- step ST1 is performed by the film forming apparatus (the processing module PM1 or the like) of the processing system 1
- step ST2 is performed after the substrate W is transferred to the etching apparatus (the processing module PM2 or the like) of the processing system 1.
- step ST2 when the etching process is performed in step ST1, the etching process performed in step ST1 may be continuously performed. That is, the etching process performed in step ST2 may be RIE.
- the gas used for the RIE etching process mainly includes a rare gas (eg, Ar gas), but may include, for example, a CH 4 gas (further, an O 2 gas) together with the rare gas.
- the first film F1 and the second film F2 include the surface FS1 and the surface FS2 by exposing the substrate W after step ST2 to the plasma of the processing gas. It is removed from the surface of the substrate W.
- a mask MK2 including the mask MK1 is formed.
- Mask MK2 extends on surface FS1 of etching layer EL after step ST3.
- the mask MK2 can function as a new mask for the etching layer EL.
- the processing gas used in step ST3 may include oxygen (O).
- the processing gas may include oxygen and a rare gas (such as Ar gas).
- the substrate W is exposed to the plasma of the processing gas containing oxygen, whereby the first film F1 of an electrode material such as Ru is deposited on the first film F1, and the material of the etching layer EL is changed. Together with the second film F2, it can be suitably peeled from the surface FS2 of the mask MK1. Therefore, in the etching of the etching layer EL, a change in the CD of the shape of the mask MK1, etc. can be sufficiently suppressed while the remaining film such as the mask MK1 is sufficiently maintained.
- an electrode material such as Ru
- the electrode material layer ED extends on the surface FS1 of the etching layer EL
- the first film F1 of the electrode material is formed by etching the etching layer EL, and the etching of the etching layer EL and the formation of the first film F1 are both performed by the first film forming unit CP1 in step ST1. Therefore, the processing can be simplified.
- the timing of forming the first film F1 can be adjusted relatively flexibly.
- step ST1, step ST2, and step ST3 may be repeatedly performed. In this case, the maintenance of the mask residual film and the suppression of the change in the CD of the mask shape can be more remarkably realized.
- the method MT may be used for etching an etching layer EL having an MTJ region including a film of a non-volatile material, for example.
- a CD with a mask residual film of 40 [nm] or more and a mask shape of 40 [nm] or less can be sufficiently realized.
- the above-described method MT can be applied to the etching layer having the MTJ region of the non-volatile material.
- the first film F1 can be made of an electrode material of Ru or C, the first film F1 can be formed relatively easily.
- the etching layer EL includes an MTJ junction region
- the MTJ region includes a Ru layer. Therefore, by using Ru of the Ru layer, the first film F1 can be more easily formed. Can be.
- the etching layer EL may include a plurality of electrode material layers ED (the layers LY3, LY8, and LY16 having Ru) that are spaced apart from each other. .
- step ST1, step ST2, and step ST3 can be repeatedly performed using a plurality of electrode material layers ED.
- the first film F1 is formed by etching the electrode material layer ED.
- the method MT includes both the step ST1 of forming the first film F1 by the etching process and the step ST1 of forming the first film F1 by the film forming process.
- SYMBOLS 1 DESCRIPTION OF SYMBOLS 1 ... Processing system, 10 ... Plasma processing apparatus, 11 ... Carrier mounting port, 12 ... Processing container, 120 ... Atmospheric transfer chamber, 120a ... Alignment chamber, 121 ... Transfer arm, 12c ... Chamber, 12g ... Opening, 12s ... Side wall, 13 vacuum transfer chamber, 131 transfer arm, 14 gate valve, 15 support, 16 stage, 18 lower electrode, 18a first plate, 18b second plate, 18f flow path, 20 static Electric chuck, 22 DC power supply, 23 switch, 24 focus ring, 26a pipe, 26b pipe, 28 gas supply line, 30 upper electrode, 32 member, 34 top plate, 34a gas discharge hole , 36 ... Support, 36a ... Gas diffusion chamber, 36b ...
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Multi-Process Working Machines And Systems (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
Claims (10)
- 基板を処理する方法であって、
前記基板は、エッチング層とマスクとを備え、
前記マスクは、前記エッチング層の第1表面上に設けられ、
当該方法は、
前記マスクの第2表面に第1膜を形成する第1工程と、
前記エッチング層の前記第1表面をエッチングすることによって、該エッチング層の材料を有する第2膜を前記第1膜上に形成する第2工程と、
前記第2工程後の前記基板を処理ガスのプラズマに晒すことによって、前記第1膜および前記第2膜を除去する第3工程と、
を備え、
前記第1膜は、電極材料を有し、
前記処理ガスは、酸素を有する、
方法。 - 前記エッチング層は、電極材料層を備え、
前記電極材料層は、前記第1表面に延在し、
前記第1工程は、前記電極材料層をエッチングし、該電極材料層の材料のスパッタによって前記第1膜を形成する、
請求項1に記載の方法。 - 前記第1工程は、化学蒸着または物理蒸着によって前記第1膜を形成する、
請求項1に記載の方法。 - 前記第1工程、前記第2工程、前記第3工程の一連の工程を繰り返し実行する、
請求項1~3の何れか一項に記載の方法。 - 前記エッチング層は、磁気トンネル接合領域を含む、
請求項1~4の何れか一項に記載の方法。 - 前記第1膜は、ルテニウムまたは炭素の電極材料を有する、
請求項1~5の何れか一項に記載の方法。 - 基板を処理する処理装置であって、
前記基板が収容されるように構成される処理容器と、
当該処理装置を制御するように構成される制御部と、
を備え、
前記制御部は、
前記処理容器内に収容された前記基板がエッチング層とマスクとを備え、該マスクが該エッチング層の第1表面上に設けられている場合に、電極材料を有する第1膜を該マスクの第2表面に形成するように当該処理装置を制御するように構成される第1膜形成部と、
前記第1膜形成部による前記第1膜の形成の後に前記エッチング層の前記第1表面をエッチングすることによって、該エッチング層の材料を有する第2膜を該第1膜上に形成するように当該処理装置を制御するように構成される第2膜形成部と、
前記第2膜形成部によって前記第2膜が形成された前記基板を、酸素を有する処理ガスのプラズマに晒すことによって、前記第1膜および該第2膜を除去するように当該処理装置を制御するように構成される膜除去部と、
を備える、
処理装置。 - 前記第1膜形成部は、前記エッチング層が電極材料層を備え、該電極材料層が前記第1表面に延在する場合に、該電極材料層をエッチングし該電極材料層の材料のスパッタによって、前記第1膜を形成するように当該処理装置を制御するように構成される、
請求項7に記載の処理装置。 - 基板を処理する処理システムであって、
前記基板に対し成膜処理を行うように構成される成膜装置と、
前記基板に対しエッチング処理を行うように構成されるエッチング装置と、
当該処理システムを制御するように構成される制御部と、
を備え、
前記制御部は、
前記成膜装置に収容された前記基板がエッチング層とマスクとを備え、該マスクが該エッチング層の第1表面上に設けられている場合に、電極材料を有する第1膜を該マスクの第2表面に形成するように当該処理システムを制御するように構成される第1膜形成部と、
前記第1膜形成部による前記第1膜の形成の後に前記基板を前記エッチング装置に移送し前記エッチング層の前記第1表面をエッチングすることによって、該エッチング層の材料を有する第2膜を該第1膜上に形成するように当該処理システムを制御するように構成される第2膜形成部と、
前記第2膜形成部によって前記第2膜が形成された前記基板を、酸素を有する処理ガスのプラズマに晒すことによって、前記第1膜および該第2膜を除去するように当該処理システムを制御するように構成される膜除去部と、
を備える、
処理システム。 - 前記第1膜形成部は、化学蒸着または物理蒸着によって前記第1膜を形成するように当該処理システムを制御するように構成される、
請求項9に記載の処理システム。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020217004556A KR20210035218A (ko) | 2018-07-30 | 2019-07-30 | 기판을 처리하는 방법, 처리 장치, 및 처리 시스템 |
US17/264,213 US11832524B2 (en) | 2018-07-30 | 2019-07-30 | Method for processing substrate, processing apparatus, and processing system |
CN201980041384.2A CN112352304A (zh) | 2018-07-30 | 2019-07-30 | 处理基板的方法、处理装置以及处理系统 |
JP2020534676A JP7058332B2 (ja) | 2018-07-30 | 2019-07-30 | 基板を処理する方法、処理装置、および、処理システム |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018142317 | 2018-07-30 | ||
JP2018-142317 | 2018-07-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2020027152A1 true WO2020027152A1 (ja) | 2020-02-06 |
Family
ID=69231825
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2019/029885 WO2020027152A1 (ja) | 2018-07-30 | 2019-07-30 | 基板を処理する方法、処理装置、および、処理システム |
Country Status (6)
Country | Link |
---|---|
US (1) | US11832524B2 (ja) |
JP (1) | JP7058332B2 (ja) |
KR (1) | KR20210035218A (ja) |
CN (1) | CN112352304A (ja) |
TW (1) | TWI812762B (ja) |
WO (1) | WO2020027152A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07263420A (ja) * | 1994-03-23 | 1995-10-13 | Sony Corp | 積層配線のドライエッチング方法およびドライエッチング装置 |
JP2005268252A (ja) * | 2004-03-16 | 2005-09-29 | Sony Corp | 磁気記憶装置の製造方法 |
JP2010165980A (ja) * | 2009-01-19 | 2010-07-29 | Hitachi Ltd | 磁性記憶素子を用いた半導体集積回路装置の製造方法 |
JP2012119564A (ja) * | 2010-12-02 | 2012-06-21 | Fujitsu Semiconductor Ltd | 磁気抵抗効果素子及びその製造方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05299391A (ja) * | 1992-04-16 | 1993-11-12 | Sony Corp | ドライエッチング方法 |
JP3185408B2 (ja) * | 1992-09-29 | 2001-07-09 | ソニー株式会社 | ドライエッチング方法 |
US6177353B1 (en) * | 1998-09-15 | 2001-01-23 | Infineon Technologies North America Corp. | Metallization etching techniques for reducing post-etch corrosion of metal lines |
US6893893B2 (en) * | 2002-03-19 | 2005-05-17 | Applied Materials Inc | Method of preventing short circuits in magnetic film stacks |
JP3818511B2 (ja) | 2003-02-14 | 2006-09-06 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
US20060264054A1 (en) * | 2005-04-06 | 2006-11-23 | Gutsche Martin U | Method for etching a trench in a semiconductor substrate |
JP2007123766A (ja) * | 2005-10-31 | 2007-05-17 | Tokyo Electron Ltd | エッチング方法、プラズマ処理装置及び記憶媒体 |
US20080194107A1 (en) * | 2007-02-08 | 2008-08-14 | Nec Electronics Corporation | Method of manufacturing semiconductor device |
EP2136391A4 (en) * | 2007-04-11 | 2012-12-19 | Ulvac Inc | dry |
KR100943860B1 (ko) * | 2007-12-21 | 2010-02-24 | 주식회사 하이닉스반도체 | 자기터널접합 셀 형성방법 |
KR20100106501A (ko) * | 2007-12-21 | 2010-10-01 | 램 리써치 코포레이션 | 고 식각율 레지스트 마스크를 이용한 식각 |
JP2010103224A (ja) | 2008-10-22 | 2010-05-06 | Toshiba Corp | 磁気抵抗素子、及び磁気メモリ |
JP2013258244A (ja) * | 2012-06-12 | 2013-12-26 | Tokyo Electron Ltd | エッチング方法及びプラズマ処理装置 |
JP6041709B2 (ja) * | 2013-03-05 | 2016-12-14 | 東京エレクトロン株式会社 | 金属層をエッチングする方法 |
KR102025256B1 (ko) * | 2013-07-25 | 2019-09-26 | 에스케이하이닉스 주식회사 | 전자 장치 및 그 제조 방법 |
US9123879B2 (en) * | 2013-09-09 | 2015-09-01 | Masahiko Nakayama | Magnetoresistive element and method of manufacturing the same |
JP2015084396A (ja) * | 2013-09-19 | 2015-04-30 | 東京エレクトロン株式会社 | エッチング方法 |
JP6289996B2 (ja) * | 2014-05-14 | 2018-03-07 | 東京エレクトロン株式会社 | 被エッチング層をエッチングする方法 |
US9806252B2 (en) * | 2015-04-20 | 2017-10-31 | Lam Research Corporation | Dry plasma etch method to pattern MRAM stack |
US9887350B2 (en) * | 2015-05-31 | 2018-02-06 | Headway Technologies, Inc. | MTJ etching with improved uniformity and profile by adding passivation step |
US9705071B2 (en) * | 2015-11-24 | 2017-07-11 | International Business Machines Corporation | Structure and method to reduce shorting and process degradation in STT-MRAM devices |
JP6656082B2 (ja) * | 2016-05-19 | 2020-03-04 | 東京エレクトロン株式会社 | 酸化膜除去方法および除去装置、ならびにコンタクト形成方法およびコンタクト形成システム |
-
2019
- 2019-07-24 TW TW108126095A patent/TWI812762B/zh active
- 2019-07-30 WO PCT/JP2019/029885 patent/WO2020027152A1/ja active Application Filing
- 2019-07-30 US US17/264,213 patent/US11832524B2/en active Active
- 2019-07-30 JP JP2020534676A patent/JP7058332B2/ja active Active
- 2019-07-30 KR KR1020217004556A patent/KR20210035218A/ko active IP Right Grant
- 2019-07-30 CN CN201980041384.2A patent/CN112352304A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07263420A (ja) * | 1994-03-23 | 1995-10-13 | Sony Corp | 積層配線のドライエッチング方法およびドライエッチング装置 |
JP2005268252A (ja) * | 2004-03-16 | 2005-09-29 | Sony Corp | 磁気記憶装置の製造方法 |
JP2010165980A (ja) * | 2009-01-19 | 2010-07-29 | Hitachi Ltd | 磁性記憶素子を用いた半導体集積回路装置の製造方法 |
JP2012119564A (ja) * | 2010-12-02 | 2012-06-21 | Fujitsu Semiconductor Ltd | 磁気抵抗効果素子及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP7058332B2 (ja) | 2022-04-21 |
TWI812762B (zh) | 2023-08-21 |
TW202013499A (zh) | 2020-04-01 |
CN112352304A (zh) | 2021-02-09 |
KR20210035218A (ko) | 2021-03-31 |
US11832524B2 (en) | 2023-11-28 |
JPWO2020027152A1 (ja) | 2021-08-02 |
US20220115589A1 (en) | 2022-04-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102363052B1 (ko) | 피처리체를 처리하는 방법 | |
TWI813883B (zh) | 用於形成供磁阻隨機存取記憶體應用之具期望結晶性之結構之方法 | |
US10896821B2 (en) | Asymmetric wafer bow compensation by physical vapor deposition | |
US20230093011A1 (en) | Atomic layer etching of molybdenum | |
JP6211893B2 (ja) | エッチング処理方法及び基板処理装置 | |
JP2011151263A (ja) | エッチング方法、エッチング装置及びリング部材 | |
CN107622945B (zh) | 等离子体蚀刻方法、等离子体蚀刻装置和基板载置台 | |
KR20160068668A (ko) | Cu 배선의 형성 방법 및 성막 시스템, 기억 매체 | |
US9150969B2 (en) | Method of etching metal layer | |
US20220131071A1 (en) | Ion beam etching with sidewall cleaning | |
JP2014183184A (ja) | コバルト及びパラジウムを含む膜をエッチングする方法 | |
TWI723162B (zh) | 磁阻元件之製造方法及磁阻元件之製造系統 | |
WO2020027152A1 (ja) | 基板を処理する方法、処理装置、および、処理システム | |
US10790152B2 (en) | Method for etching multilayer film | |
JP2010219266A (ja) | 基板処理装置 | |
KR20210114865A (ko) | 에지링의 지지 방법, 플라즈마 처리 장치, 및 기판 처리 시스템 | |
JP5825948B2 (ja) | 基板処理装置及び半導体装置の製造方法 | |
JP2007221171A (ja) | 異種薄膜作成装置 | |
JP2019068012A (ja) | 被加工物の処理方法。 | |
JP5975128B2 (ja) | 基板処理装置、基板処理方法 | |
TW202040689A (zh) | 蝕刻膜之方法及電漿處理裝置 | |
TW202040684A (zh) | 膜之蝕刻方法 | |
JP2021128976A (ja) | ステージ装置、給電機構、および処理装置 | |
TW201923895A (zh) | 蝕刻方法 | |
JPH0758092A (ja) | 減圧処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 19845155 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2020534676 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20217004556 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 19845155 Country of ref document: EP Kind code of ref document: A1 |