JP2019068012A - 被加工物の処理方法。 - Google Patents
被加工物の処理方法。 Download PDFInfo
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Abstract
【解決手段】磁気抵抗効果素子の製造において実行される被加工物の処理方法であって、被加工物は第1の多層膜と第2の多層膜とを有しており、第1の多層膜は第1の磁性層、第2の磁性層、およびトンネルバリア層を含み、トンネルバリア層は第1の磁性層と第2の磁性層との間に設けられ、第2の多層膜は磁気抵抗効果素子においてピニング層を構成する多層膜である。当該方法は、第1の多層膜および第2の多層膜に対するエッチングの実行後に、または、このエッチングの実行中に、被加工物を加熱する工程を備える。この工程は、被加工物の周囲の状態を調整しつつ被加工物を加熱する。
【選択図】図1
Description
<加熱工程ST2の条件>
・被加工物Wの温度:摂氏200度
・実行時間:600秒
Claims (7)
- 磁気抵抗効果素子の製造において実行される被加工物の処理方法であって、該被加工物は第1の多層膜と第2の多層膜とを有しており、該第1の多層膜は第1の磁性層、第2の磁性層、およびトンネルバリア層を含み、該トンネルバリア層は該第1の磁性層と該第2の磁性層との間に設けられ、該第2の多層膜は該磁気抵抗効果素子においてピニング層を構成する多層膜であり、
当該方法は、
前記第1の多層膜および前記第2の多層膜に対するエッチングの実行後に、または、該エッチングの実行中に、前記被加工物を加熱する工程を備え、
前記工程は、前記被加工物の周囲の状態を調整しつつ該被加工物を加熱する、
方法。 - 前記工程は、前記被加工物を真空加熱する、
請求項1に記載の方法。 - 前記工程は、前記エッチングの実行後において、前記被加工物の周囲にガスを供給することによって該被加工物の周囲の状態を調整する、
請求項1に記載の方法。 - 前記ガスは、水素ガスおよび希ガスの何れかを含む、
請求項3に記載の方法。 - 前記工程は、前記被加工物の周囲に供給される前記ガスのプラズマを発生させることによって該被加工物の周囲の状態を調整する、
請求項3または請求項4に記載の方法。 - 前記工程は、前記被加工物の温度が摂氏160度以上且つ摂氏200度以下となるように該被加工物を加熱する、
請求項1〜5の何れか一項に記載の方法。 - 前記工程は、前記被加工物の温度が摂氏160度以上且つ摂氏180度以下となるように該被加工物を加熱する、
請求項1〜5の何れか一項に記載の方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2017194975A JP2019068012A (ja) | 2017-10-05 | 2017-10-05 | 被加工物の処理方法。 |
TW107133752A TWI779102B (zh) | 2017-10-05 | 2018-09-26 | 被加工物之處理方法 |
KR1020180117612A KR102580731B1 (ko) | 2017-10-05 | 2018-10-02 | 피가공물의 처리 방법 |
US16/151,689 US11171286B2 (en) | 2017-10-05 | 2018-10-04 | Method of processing workpiece |
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JP2017194975A JP2019068012A (ja) | 2017-10-05 | 2017-10-05 | 被加工物の処理方法。 |
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JP2019068012A true JP2019068012A (ja) | 2019-04-25 |
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US (1) | US11171286B2 (ja) |
JP (1) | JP2019068012A (ja) |
KR (1) | KR102580731B1 (ja) |
TW (1) | TWI779102B (ja) |
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US11688650B2 (en) * | 2019-07-05 | 2023-06-27 | Tokyo Electron Limited | Etching method and substrate processing apparatus |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008091484A (ja) * | 2006-09-29 | 2008-04-17 | Toshiba Corp | 磁気抵抗効果素子の製造方法および磁気抵抗効果素子の製造装置 |
JP2013021129A (ja) * | 2011-07-11 | 2013-01-31 | Toshiba Corp | エッチング装置及び半導体装置の製造方法 |
JP2016051819A (ja) * | 2014-08-29 | 2016-04-11 | 東京エレクトロン株式会社 | 磁気アニール装置及び磁気アニール方法 |
JP2017505538A (ja) * | 2014-01-09 | 2017-02-16 | アレグロ・マイクロシステムズ・エルエルシー | 磁界に対する応答が改善された磁気抵抗素子 |
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TWI293213B (en) * | 2004-10-05 | 2008-02-01 | Taiwan Semiconductor Mfg | Magnetoresistive structures, magnetoresistive devices, and memory cells |
JP6414754B2 (ja) * | 2013-11-06 | 2018-10-31 | 日本電気株式会社 | 磁気抵抗効果素子および磁気メモリ |
JP2016164955A (ja) * | 2015-03-06 | 2016-09-08 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2017079089A (ja) * | 2015-10-22 | 2017-04-27 | 東京エレクトロン株式会社 | 磁気抵抗素子の製造方法及び磁気抵抗素子の製造システム |
US20170186944A1 (en) * | 2015-12-29 | 2017-06-29 | International Business Machines Corporation | Enhancement of spin transfer torque magnetoresistive random access memory device using hydrogen plasma |
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- 2017-10-05 JP JP2017194975A patent/JP2019068012A/ja active Pending
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- 2018-10-02 KR KR1020180117612A patent/KR102580731B1/ko active IP Right Grant
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008091484A (ja) * | 2006-09-29 | 2008-04-17 | Toshiba Corp | 磁気抵抗効果素子の製造方法および磁気抵抗効果素子の製造装置 |
JP2013021129A (ja) * | 2011-07-11 | 2013-01-31 | Toshiba Corp | エッチング装置及び半導体装置の製造方法 |
JP2017505538A (ja) * | 2014-01-09 | 2017-02-16 | アレグロ・マイクロシステムズ・エルエルシー | 磁界に対する応答が改善された磁気抵抗素子 |
JP2016051819A (ja) * | 2014-08-29 | 2016-04-11 | 東京エレクトロン株式会社 | 磁気アニール装置及び磁気アニール方法 |
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Publication number | Publication date |
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US11171286B2 (en) | 2021-11-09 |
KR102580731B1 (ko) | 2023-09-21 |
KR20190039651A (ko) | 2019-04-15 |
TWI779102B (zh) | 2022-10-01 |
TW201923890A (zh) | 2019-06-16 |
US20190109282A1 (en) | 2019-04-11 |
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