JP6230343B2 - 固体撮像装置、その駆動方法及び撮像システム - Google Patents

固体撮像装置、その駆動方法及び撮像システム Download PDF

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Publication number
JP6230343B2
JP6230343B2 JP2013185211A JP2013185211A JP6230343B2 JP 6230343 B2 JP6230343 B2 JP 6230343B2 JP 2013185211 A JP2013185211 A JP 2013185211A JP 2013185211 A JP2013185211 A JP 2013185211A JP 6230343 B2 JP6230343 B2 JP 6230343B2
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Prior art keywords
transfer transistor
potential
gate
solid
imaging device
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JP2013185211A
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Japanese (ja)
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JP2015053596A (ja
JP2015053596A5 (enExample
Inventor
伸一郎 清水
伸一郎 清水
章 大谷
章 大谷
大 藤村
大 藤村
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Canon Inc
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Canon Inc
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Priority to JP2013185211A priority Critical patent/JP6230343B2/ja
Priority to US14/472,612 priority patent/US9554069B2/en
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/626—Reduction of noise due to residual charges remaining after image readout, e.g. to remove ghost images or afterimages
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/779—Circuitry for scanning or addressing the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2013185211A 2013-09-06 2013-09-06 固体撮像装置、その駆動方法及び撮像システム Expired - Fee Related JP6230343B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013185211A JP6230343B2 (ja) 2013-09-06 2013-09-06 固体撮像装置、その駆動方法及び撮像システム
US14/472,612 US9554069B2 (en) 2013-09-06 2014-08-29 Solid-state imaging apparatus changing a gate voltage of a transfer transistor, driving method for the same, and imaging system

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JP2013185211A JP6230343B2 (ja) 2013-09-06 2013-09-06 固体撮像装置、その駆動方法及び撮像システム

Publications (3)

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JP2015053596A JP2015053596A (ja) 2015-03-19
JP2015053596A5 JP2015053596A5 (enExample) 2016-09-29
JP6230343B2 true JP6230343B2 (ja) 2017-11-15

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US (1) US9554069B2 (enExample)
JP (1) JP6230343B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015128253A (ja) 2013-12-27 2015-07-09 キヤノン株式会社 固体撮像装置およびその駆動方法
KR102170627B1 (ko) 2014-01-08 2020-10-27 삼성전자주식회사 이미지 센서
JP2018082295A (ja) 2016-11-16 2018-05-24 キヤノン株式会社 撮像装置及び撮像システム
JP6904772B2 (ja) 2017-04-26 2021-07-21 キヤノン株式会社 固体撮像装置及びその駆動方法
JP7245014B2 (ja) 2018-09-10 2023-03-23 キヤノン株式会社 固体撮像装置、撮像システム、および固体撮像装置の駆動方法
US11245860B2 (en) * 2019-12-13 2022-02-08 Varian Medical Systems International Ag Reduction of image lag in an X-ray detector panel

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JPS5580370A (en) * 1978-12-13 1980-06-17 Toshiba Corp Driving system for driving electric-charge transfer element
JP3524440B2 (ja) * 1999-07-27 2004-05-10 キヤノン株式会社 固体撮像装置とその駆動方法
JP3667214B2 (ja) * 2000-08-25 2005-07-06 キヤノン株式会社 固体撮像装置およびその駆動方法
JP3728260B2 (ja) 2002-02-27 2005-12-21 キヤノン株式会社 光電変換装置及び撮像装置
US7429764B2 (en) 2002-02-27 2008-09-30 Canon Kabushiki Kaisha Signal processing device and image pickup apparatus using the same
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JP4827508B2 (ja) 2005-12-02 2011-11-30 キヤノン株式会社 撮像システム
JP2008004682A (ja) * 2006-06-21 2008-01-10 Matsushita Electric Ind Co Ltd 固体撮像装置、その駆動方法および製造方法
JP5043388B2 (ja) 2006-09-07 2012-10-10 キヤノン株式会社 固体撮像装置および撮像システム
JP5173171B2 (ja) 2006-09-07 2013-03-27 キヤノン株式会社 光電変換装置、撮像装置及び信号読出方法
JP4674589B2 (ja) * 2007-02-05 2011-04-20 ソニー株式会社 固体撮像装置および撮像装置
JP4110193B1 (ja) 2007-05-02 2008-07-02 キヤノン株式会社 固体撮像装置および撮像システム
JP5111140B2 (ja) 2008-02-06 2012-12-26 キヤノン株式会社 固体撮像装置の駆動方法、固体撮像装置、及び撮像システム
JP5203913B2 (ja) 2008-12-15 2013-06-05 キヤノン株式会社 光電変換装置、撮像システム、及び光電変換装置の駆動方法
JP5643555B2 (ja) 2010-07-07 2014-12-17 キヤノン株式会社 固体撮像装置及び撮像システム
JP5885401B2 (ja) 2010-07-07 2016-03-15 キヤノン株式会社 固体撮像装置および撮像システム
JP5697371B2 (ja) 2010-07-07 2015-04-08 キヤノン株式会社 固体撮像装置および撮像システム
JP5656484B2 (ja) 2010-07-07 2015-01-21 キヤノン株式会社 固体撮像装置および撮像システム
JP2012034350A (ja) 2010-07-07 2012-02-16 Canon Inc 固体撮像装置及び撮像システム
JP5645513B2 (ja) 2010-07-07 2014-12-24 キヤノン株式会社 固体撮像装置及び撮像システム
JP5506586B2 (ja) 2010-07-30 2014-05-28 キヤノン株式会社 固体撮像装置及び固体撮像装置の駆動方法
US9103724B2 (en) * 2010-11-30 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising photosensor comprising oxide semiconductor, method for driving the semiconductor device, method for driving the photosensor, and electronic device
JP6112963B2 (ja) * 2013-05-10 2017-04-12 キヤノン株式会社 撮像装置

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US20150070554A1 (en) 2015-03-12
JP2015053596A (ja) 2015-03-19
US9554069B2 (en) 2017-01-24

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