JP6190600B2 - 超高電圧固体電解コンデンサ - Google Patents
超高電圧固体電解コンデンサ Download PDFInfo
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- JP6190600B2 JP6190600B2 JP2013048424A JP2013048424A JP6190600B2 JP 6190600 B2 JP6190600 B2 JP 6190600B2 JP 2013048424 A JP2013048424 A JP 2013048424A JP 2013048424 A JP2013048424 A JP 2013048424A JP 6190600 B2 JP6190600 B2 JP 6190600B2
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- Prior art keywords
- acid
- anode
- capacitor
- volts
- optionally substituted
- Prior art date
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- NLVXSWCKKBEXTG-UHFFFAOYSA-N vinylsulfonic acid Chemical compound OS(=O)(=O)C=C NLVXSWCKKBEXTG-UHFFFAOYSA-N 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Description
アノードは、バルブ金属組成物で典型的に形成される。組成物の比電荷は、約2,000μF*V/gから約70,000μF*V/g、一部の実施形態において約3,000μF*V/gから40,000μF*V/g又はそれよりも高く、一部の実施形態において約4,000μF*V/gから約20,000μF*V/gのように変えることができる。バルブ金属組成物は、タンタル、ニオブ、アルミニウム、ハフニウム、チタン、その合金、それらの酸化物、及びそれらの窒化物などのようなバルブ金属(すなわち、酸化ができる金属)又はバルブ金属ベースの化合物を含有する。例えば、バルブ金属組成物は、1:1.0±1.0、一部の実施形態において1:10±0.3、一部の実施形態において1:10±0.1、一部の実施形態において1:1±0.05のニオブの酸素に対する原子比を有するニオブ酸化物のようなニオブの導電性酸化物を含有することができる。ニオブ酸化物は、NbO0.7、NbO1.0、NbO1.1、及びNbO2とすることができる。そのようなバルブ金属酸化物の例は、Fifeに付与された米国特許第6,322,912号明細書、Fife他に付与された第6,391,275号明細書、Fife他に付与された第6,416,730号明細書、Fifeに付与された第6,527,937号明細書、Kimmel他に付与された第6,576,099号明細書、Fife他に付与された第6,592,740号明細書、及びKimmel他に付与された第6,639,787号明細書、及びKimmel他に付与された第7,220,397号明細書、並びにSchnitterに付与された米国特許出願公開第2005/0019581号明細書、Schnitter他に付与された第2005/0103638号明細書、Thomas他に付与された第2005/0013765号明細書に説明されており、それらの全ては、全ての目的に関するそれらの引用により、それらの全体として本明細書に組み込まれている。
誘電体を形成するために、焼結アノードは陽極酸化され(「アノダイズド」)、それによって誘電体がアノードを覆い及び/又はその内部に形成される。例えば、タンタル(Ta)アノードは、五酸化タンタル(Ta2O5)に陽極酸化することができる。陽極酸化は、アノードを例えば電解質を収容した溶液槽内に浸漬するなどしてアノードに電解質を最初に付加することによって行われる。電解質は、溶液(例えば、水性又は非水性)、分散液、溶融物などのような一般的に液体の形態である。水(例えば、脱イオン水);エーテル(例えば、ジエチルエーテル及びテトラヒドロフラン);アルコール(例えば、メタノール、エタノール、n−プロパノール、イソプロパノール、及びブタノール);トリグリセリド;ケトン(例えば、アセトン、メチルエチルケトン、及びメチルイソブチルケトン);エステル(例えば、酢酸エチル、酢酸ブチル、ジエチレングリコールエーテルアセタート、及びメトキシプロピルアセタート);アミド(例えば、ジメチルホルムアミド、ジメチルアセトアミド、ジメチルカプリリック/カプリック脂肪酸アミド及びN−アルキルピロリドン);ニトリル(例えば、アセトニトリル、プロピオニトリル、ブチロニトリル及びベンゾニトリル);スルホキシド又はスルホン(例えば、ジメチルスルホキシド(DMSO)及びスルホラン);その他のような溶媒が電解質中に一般的に用いられる。溶媒は、電解質の約50重量%から約99.9重量%、一部の実施形態において約75重量%から約99重量%、一部の実施形態において約80重量%から約95重量%を構成することができる。必ずしも必要でないが、水性溶媒(例えば、水)の使用が、酸化物の形成を容易にするために多くの場合に望ましい。実際上、水は、電解質中に使用される溶媒の約1重量%よりも多く、一部の実施形態において約10重量%よりも多く、一部の実施形態において約50重量%よりも多く、一部の実施形態において約70重量%よりも多く、一部の実施形態において約90重量%から100重量%を構成することができる。
コンデンサのためのカソードとして一般的に機能する固体電解質は、誘電体の上に重なる。固体電解質は、1つ又はそれよりも多くの導電性ポリマー層で形成することができる。いずれであっても、固体電解質は、置換ポリチオフェンである導電性ポリマーを一般的に含む。一実施形態において、例えば、置換ポリチオフェンは、以下の一般構造を有する。
ここで、
Tは、O又はSであり、
Dは、任意的に置換されたC1からC5アルキレン基(例えば、メチレン、エチレン、n−プロピレン、n−ブチレン、n−ペンチレンなど)であり、
R7は、直鎖又は分岐の任意的に置換されたC1からC18アルキル基(例えば、メチル、エチル、n−又はiso−プロピル、n−,iso−,sec−又はtert−ブチル、n−ペンチル、1−メチルブチル、2−メチルブチル、3−メチルブチル、1−エチルプロピル、1,1−ジメチルプロピル、1,2−ジメチルプロピル、2,2−ジメチルプロピル、n−ヘキシル、n−ヘプチル、n−オクチル、2−エチルヘキシル、n−ノニル、n−デシル、n−ウンデシル、n−ドデシル、n−トリデシル、n−テトラデシル、n−ヘキサデシル、n−オクタデシルなど);任意的に置換されたC5からC12シクロアルキル基(例えば、シクロペンチル、シクロヘキシル、シクロヘプチル、シクロオクチル、シクロノニル、シクロデシルなど);任意的に置換されたC6からC14アリール基(例えば、フェニル、ナフチルなど);任意的に置換されたC7からC18アラルキル基(例えば、ベンジル、o−,m−,p−トリル,2,3−,2,4−,2,5−,2,6−,3,4−,3,5−キシリル、メシチルなど);任意的に置換されたC1からC4ヒドロキシアルキル基、又はヒドロキシル基であり、
qは、0から8、一部の実施形態において0から2の整数であり、一部の実施形態において0であり、
nは、2から5,000、一部の実施形態において4から2,000、一部の実施形態において5から1,000である。ラジカル「D」又は「R7」のための置換基の例は、例えば、アルキル、シクロアルキル、アリール、アラルキル、アルコキシ、ハロゲン、エーテル、チオエーテル、ジスルフィド、スルホキシド、スルホン、スルホナート、アミノ、アルデヒド、ケト、カルボン酸エステル、カルボン酸、カーボナート、カルボキシラート、シアノ、アルキルシラン及びアルコキシシラン基、カルボキシルアミド基などを含む。
ここで、T、D、R7、及びqは、上記に定義されている。とりわけ適切なチオフェンモノマーは、「D」が任意的に置換されたC2からC3アルキレン基のものである。例えば、以下の一般構造を有する任意的に置換された3,4−アルキレンジオキシチオフェンを使用することができる。
ここで、R7及びqは、上記に定義されている。1つの特定的な実施形態において、「q」は0である。3,4−エチレンジオキシチオフェンの市販の適切な例は、「Heraeus Clevios」からClevios(登録商標)Mの名称で入手可能である。他の適切なモノマーは、本明細書に全ての目的に対してその引用により全体として組み込まれているBlohm他に付与された米国特許第5,111,327号明細書及びGroenedaal他に付与された米国特許第6,635,729号明細書にも説明されている。例えば、上述のモノマーの二量体又は三量体であるこれらのモノマーの誘導体を使用することもできる。より高分子の誘導体、すなわち、このモノマーの四量体、五量体などは、本発明での使用に適切である。この誘導体は、同一の又は異なるモノマー単位から構成することができ、かつ純粋形態で及び互いとの及び/又はモノマーとの混合物で使用することができる。これらの前駆体の酸化型又は還元型も用いることができる。
必要に応じて、コンデンサは、当業技術で公知のように他の層を含むことができる。例えば、比較的絶縁性の樹脂状材料(天然又は合成)で製造されたもののような保護コーティングを任意的に付加することができる。そのような材料は、約10Ω/cmよりも大きく、一部の実施形態において約100よりも大きく、一部の実施形態において約1,000Ω/cmよりも大きく、一部の実施形態において約1×105Ω/cmよりも大きく、一部の実施形態において約1×1010Ω/cmよりも大きい比抵抗を有することができる。本発明に利用することができる一部の樹脂状材料は、以下に制限されるものではないが、ポリウレタン、ポリスチレン、不飽和又は飽和脂肪酸のエステル(例えば、グリセリド)などを含む。例えば、適切な脂肪酸のエステルは、以下に制限されるものではないが、ラウリン酸、ミリスチン酸、パルミチン酸、ステアリン酸、エレオステアリン酸、オレイン酸、リノール酸、リノレン酸、アレウリチン酸、シェロール酸のようなエステルを含む。これらの脂肪酸のエステルは、得られるフィルムが安定した層に迅速に重合することを可能にする「乾性油」を形成する比較的複雑な組合せで使用される時にとりわけ有用であることが公知である。こうした乾性油は、それぞれ1つ、2つ、及び3つのエステル化された脂肪酸アシル残基を有するグリセロール主鎖を有するモノ−、ジ−、及び/又はトリ−グリセリドを含むことができる。例えば、使用することができる一部の適切な乾性油は、以下に制限されるものではないが、オリーブ油、アマニ油、ヒマシ油、キリ油、大豆油、及びシェラックを含む。これら及び他の保護コーティングは、Fife他に付与された米国特許第6,674,635号明細書により詳細に説明されており、この特許は、全ての目的に対してその引用によりその全体が本明細書に組み込まれている。
キャパシタンス
キャパシタンスは、2.2ボルトDCのバイアス及び0.5ボルトピーク間の正弦波信号を用いてKelvinリードを付した「Keithley 3330 Precision LCZ」メーターを使用して測定された。
等価直列抵抗は、2.2ボルトDCのバイアス及び0.5ボルトピーク間の正弦波信号を用いてKelvinリードを付した「Keithley 3330 Precision LCZ」メーターを使用して測定することができる。作動周波数は100kHz、温度は室温であった。
漏れ電流(「DCL」)は、室温かつ定格電圧で最低限60秒後での漏れ電流を測定するリーケージ試験セットを用いて測定された。
サージ電流試験は、全ての目的に関してそれへの引用によって本明細書に全体として組み込まれている「固体タンタルコンデンサにおけるサージ(Surge in Solid Tantulam Capacitors)」という名称のJohn Gillによる論文に従って室温で実施された。特に、サージ試験は次図の回路を用いて行われた。
(a)個々のコンデンサが、コンデンサが短絡した時の電圧まで充電される(定格電圧から開始した)。
(b)プローブがコンデンサ上に下される。スイッチングFETはこの段階ではオフであり、電流は流れない。
(c)FETがオンにされ、従って、急速瞬時ピークサージ電流が流れてコンデンサを充電することが可能とされる。ピークサージ電流は、この部分の〜2×定格電流に対応する。例えば、50ボルトの定格電圧を有するコンデンサは、約100アンペアのピークサージ電流を有することになる。
(d)電流は、トランジスタのソースログ内の抵抗(例えば、0.18オーム抵抗)によってモニタされ、その電流がこのキャパシタンスに基づく所定の時間の後で依然として低下していない場合、この部分は動的に拒否される。
(e)FETがオフにされて充電処理が停止される。
(f)コンデンサの短絡前の以前の電圧と電流が記録される。
絶縁破壊電圧試験は、室温で実施された。試験は、個々のコンデンサを0.01ミリアンペアで10キロオームを通して充電することによって行われた(充電勾配dU/dt=1)。印加電圧が10%を超えて低下した時に絶縁破壊電圧の値が記録された。
30 電解コンデンサ
33 コンデンサ要素
62 アノード終端
72 カソード終端
Claims (19)
- 超高電圧固体電解コンデンサ要素を形成する方法であって、
タンタル、ニオブ、又はそれらの導電性酸化物を含有する粉末から形成される焼結多孔質アノード本体を約300ボルト又はそれよりも高い形成電圧及び約25℃から約50℃の温度で陽極酸化し、該アノード本体上に誘電体コーティングを含有するアノードを形成する段階と、
置換ポリチオフェンを含む導電性ポリマー粒子の分散液を前記アノードに付加して固体電解質を形成する段階と、
を含むことを特徴とする方法。 - 前記多孔質アノード本体は、電解質を収容する溶液槽中に浸漬され、
前記電解質は、約10℃から約70℃の温度に保たれる、
ことを特徴とする請求項1に記載の方法。 - 電流が、前記電解質を通って流されて約300ボルト又はそれよりも高い電圧で前記誘電体コーティングを形成することを特徴とする請求項2に記載の方法。
- 前記形成電圧は、約340ボルトから約380ボルトであることを特徴とする請求項1から請求項3のいずれか1項に記載の方法。
- 前記多孔質アノード本体は、約2から約100のアスペクト比を有する薄片粒子を含有するタンタル粉末から形成されることを特徴とする請求項1から請求項4のいずれか1項に記載の方法。
- 前記多孔質アノード本体は、約5,000から約40,000μF*V/gの比電荷を有する粉末から形成されることを特徴とする請求項1から請求項5のいずれか1項に記載の方法。
- 前記導電性ポリマー粒子は、ポリ(3,4−エチレンジオキシチオフェン)又はその誘導体を有することを特徴とする請求項1から請求項8のいずれか1項に記載の方法。
- 前記導電性ポリマー粒子は、約1から約200ナノメートルの平均直径を有することを特徴とする請求項1から請求項9のいずれか1項に記載の方法。
- 前記固体電解質は、モノマーアニオン又はポリマーアニオンのような対イオンを更に含むことを特徴とする請求項1から請求項10のいずれか1項に記載の方法。
- 前記アノードの前記多孔質本体から縦方向に延びるリードを更に含むことを特徴とする請求項1から請求項11のいずれか1項に記載の方法。
- 前記固体電解質は、原位置重合によって形成された導電性ポリマーを一般的に含まないことを特徴とする請求項1から請求項12のいずれか1項に記載の方法。
- 請求項1から請求項13のいずれか1項に記載の方法から形成されたコンデンサ要素。
- 固体電解コンデンサであって、
陽極酸化された焼結多孔質アノード本体を含み、該アノード本体がタンタル又は酸化ニオブを含有して約3,000から約40,000μF*V/gの比電荷を有する粉末から形成されたアノードと、
前記アノードの上に重なり、ポリ(3,4−エチレンジオキシチオフェン)又はその誘導体を有する導電性ポリマー粒子の分散液から形成された固体電解質と、
前記アノードに電気的に接続したアノード終端と、
前記固体電解質に電気的に接続したカソード終端と、
を含み、
コンデンサが、約200ボルト又はそれよりも高く、好ましくは約240から約300ボルトの絶縁破壊電圧を示し、約300から約800アンペアのピークサージ電流を示し、約110ボルトから約200ボルトの定格電圧を有する、ことを特徴とするコンデンサ。 - 前記多孔質アノード本体は、約2から約100のアスペクト比を有する薄片粒子を含有するタンタル粉末から形成されることを特徴とする請求項15に記載のコンデンサ。
- 前記固体電解質は、モノマーアニオン又はポリマーアニオンのような対イオンを更に含むことを特徴とする請求項15に記載のコンデンサ。
- 前記固体電解質は、原位置重合によって形成された導電性ポリマーを一般的に含まないことを特徴とする請求項15に記載のコンデンサ。
- 前記焼結多孔質アノード本体は、約50ppmよりも多くないカーボンを有することを特徴とする請求項15に記載のコンデンサ。
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-
2013
- 2013-02-14 DE DE102013101443A patent/DE102013101443A1/de active Pending
- 2013-02-20 GB GB1302973.1A patent/GB2499900B/en not_active Expired - Fee Related
- 2013-02-21 JP JP2013048424A patent/JP6190600B2/ja not_active Expired - Fee Related
- 2013-02-22 CN CN201310057687.8A patent/CN103295792B/zh active Active
- 2013-02-22 US US13/773,692 patent/US9053854B2/en active Active
- 2013-02-28 KR KR1020130021878A patent/KR102025821B1/ko active IP Right Grant
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GB201302973D0 (en) | 2013-04-03 |
CN103295792B (zh) | 2017-11-07 |
JP6641321B2 (ja) | 2020-02-05 |
DE102013101443A1 (de) | 2013-09-05 |
US20130229751A1 (en) | 2013-09-05 |
GB2499900A (en) | 2013-09-04 |
KR20130100731A (ko) | 2013-09-11 |
CN103295792A (zh) | 2013-09-11 |
GB2499900B (en) | 2016-01-06 |
US9053854B2 (en) | 2015-06-09 |
JP2017188692A (ja) | 2017-10-12 |
JP2013183162A (ja) | 2013-09-12 |
KR102025821B1 (ko) | 2019-11-04 |
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