JP2011091408A - 密閉されたコンデンサアセンブリ - Google Patents
密閉されたコンデンサアセンブリ Download PDFInfo
- Publication number
- JP2011091408A JP2011091408A JP2010241438A JP2010241438A JP2011091408A JP 2011091408 A JP2011091408 A JP 2011091408A JP 2010241438 A JP2010241438 A JP 2010241438A JP 2010241438 A JP2010241438 A JP 2010241438A JP 2011091408 A JP2011091408 A JP 2011091408A
- Authority
- JP
- Japan
- Prior art keywords
- anode
- capacitor assembly
- assembly according
- capacitor
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000003990 capacitor Substances 0.000 title claims abstract description 82
- 239000000919 ceramic Substances 0.000 claims abstract description 40
- 239000007784 solid electrolyte Substances 0.000 claims abstract description 33
- 229920001940 conductive polymer Polymers 0.000 claims abstract description 28
- 239000011261 inert gas Substances 0.000 claims abstract description 16
- 239000012298 atmosphere Substances 0.000 claims abstract description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000001301 oxygen Substances 0.000 claims abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 16
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- 239000000853 adhesive Substances 0.000 claims description 12
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- 238000003466 welding Methods 0.000 claims description 12
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 11
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 7
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 6
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 5
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- 229910052715 tantalum Inorganic materials 0.000 description 7
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
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- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical class O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 4
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- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 4
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- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 4
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/08—Housing; Encapsulation
- H01G9/10—Sealing, e.g. of lead-in wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
【解決手段】陽極体には陽極リード6も電気的に接続され、陽極体から縦方向に延びる。陽極リードは、リードフレーム62の「直立」部分に接続される。とりわけ、これがリードの実質的な水平方向の動きを制限するのに役立ち、この結果部品の機械的ロバスト性が向上する。コンデンサ20及びリードフレームは、不活性ガスの雰囲気中でセラミックハウジング120内に内包され密閉される。セラミックハウジングは、コンデンサの導電性ポリマーに供給される酸素及び水分の量を制限できると考えられている。このようにして、固体電解質が高温環境で反応を受ける可能性が低くなり、コンデンサアセンブリ100の熱的安定性が高められる。
【選択図】図1
Description
陽極体は、約40,000μF*V/g以上、実施形態によっては約50,000μF*V/g以上、実施形態によっては約60,000μF*V/g以上、及び実施形態によっては約70,000〜約700,000μF*V/gのような高い比電荷を有するバルブ金属組成物から形成することができる。バルブ金属組成物は、タンタル、ニオブ、アルミニウム、ハフニウム、チタン、これらの合金、これらの酸化物、及びこれらの窒化物などのバルブ金属(すなわち酸化できる金属)又はバルブ金属ベースの化合物を含む。例えば、バルブ金属組成物は、ニオブの酸素に対する原子比が1:1.0±1.0、実施形態によっては1:10±0.3、実施形態によっては1:10±0.1、及び実施形態によっては1:1±0.05のニオブ酸化物のようなニオブの導電性酸化物を含むことができる。例えば、ニオブ酸化物は、NbO0.7、NbO1.0、NbO1.1、及びNbO2であってもよい。好ましい実施形態では、組成物はNbO1.0を含み、これは高温での焼結後であっても化学的に安定した状態を保つことができる導電性ニオブ酸化物である。このようなバルブ金属酸化物の例が、Fifeに付与された米国特許第6,322,912号、Fife他に付与された第6,391,275号、Fife他に付与された第6,416,730号、Fifeに付与された第6,527,937号、Kimmel他に付与された第6,576,099号、Fife他に付与された第6,592,740号、Kimmel他に付与された第6,639,787号、及びKimmel他に付与された第7,220,397号、並びにSchnitterへの米国特許出願公開第2005/0019581号、Schnitter他への米国特許出願公開第2005/0103638号、Thomas他への米国特許出願公開第2005/0013765号に記載されており、これらの特許は全てあらゆる目的によるこれらへの参照によりその全体が本明細書に組み入れられる。
Aは任意に置換されたC1〜C5のアルキレン基(例えば、メチレン、エチレン、n‐プロピレン、n‐ブチレン、n‐ペンチレンなど)であり、
Rは直鎖又は分岐の、任意に置換されたC1〜C18のアルキル基(例えば、メチル、エチル、n‐又はiso‐プロピル、n‐,iso‐,sec‐又はtert‐ブチル、n‐ペンチル、1‐メチルブチル、2‐メチルブチル、3‐メチルブチル、1‐エチルプロピル、1,1‐ジメチルプロピル、1,2‐ジメチルプロピル、2,2‐ジメチルプロピル、n‐ヘキシル、n‐ヘプチル、n‐オクチル、2‐エチルヘキシル、n‐ノニル、n‐デシル、n‐ウンデシル、n‐ドデシル、n‐トリデシル、n‐テトラデシル、n‐ヘキサデシル、n‐オクタデシルなど)、任意に置換されたC5〜C12のシクロアルキル基(例えば、シクロペンチル、シクロヘキシル、シクロヘプチル、シクロオクチル、シクロノニル、シクロデシルなど)、任意に置換されたC6〜C14のアリール基(例えば、フェニル、ナフチルなど)、任意に置換されたC7〜C18のアラルキル基(例えば、ベンジル、o‐,m‐,p‐トリル,2,3‐,2,4‐,2,5‐,2,6‐,3,4‐,3,5‐キシリル、メシチルなど)、任意に置換されたC1〜C4のヒドロキシアルキル基、又はヒドロキシル基であり、
xは0〜8の、実施形態によっては0〜2の整数であり、及び実施形態によってはxは0である。化学基「A」又は「R」の置換基の例としては、例えば、アルキル、シクロアルキル、アリール、アラルキル、アルコキシ、ハロゲン、エーテル、チオエーテル、ジスルフィド、スルホキシド、スルホン、スルホネート、アミノ、アルデヒド、ケト、カルボン酸エステル、カルボン酸、カーボネート、カルボキシレート、シアノ、アルキルシラン及びアルコキシシラン基、カルボキシアミド基などが挙げられる。
上述したように、本発明によれば、コンデンサを内包して密閉するためにセラミックハウジングも提供される。一般に、使用中に導電性ポリマー陰極の酸化を抑えるために、セラミックハウジング内におけるセラミックによるコンデンサの密閉は少なくとも1つの不活性ガスを含む気体雰囲気中で行われる。不活性ガスとして、例えば、窒素、ヘリウム、アルゴン、キセノン、ネオン、クリプトン、ラドン、など、並びにこれらの混合物を挙げることができる。通常、不活性ガスは、約50重量%〜約100重量%、実施形態によっては約75重量%〜約100重量%、及び実施形態によっては約90重量%〜約99重量%などのように、セラミックハウジング内の雰囲気の大部分を構成する。必要であれば、比較的少量の、二酸化炭素、酸素、水蒸気などの非不活性ガスを使用することもできる。しかしながらこのような場合、通常、非不活性ガスは、セラミックハウジング内の雰囲気の15重量%以下、実施形態によっては10重量%以下、実施形態によっては約5重量%以下、実施形態によっては約1重量%以下、及び実施形態によっては約0.01重量%〜約1重量%を構成する。例えば、(相対湿度によって示される)水分含量は、約10%以下、実施形態によっては約5%以下、実施形態によっては約1%以下、及び実施形態によっては約0.01〜約5%であることができる。
等価直列抵抗(ESR)、静電容量、及び誘電正接:
Kelvinリードを付したKeithley 3330 Precision LCZメータを使用して0ボルトバイアス及び1ボルト信号で等価直列抵抗を測定した。動作周波数は100kHzであった。Kelvinリードを付したKeithley 3330 Precision LCZメータを使用して2ボルトバイアス及び1ボルト信号で静電容量を測定した。動作周波数は120Hz、温度は23℃±2℃であった。
漏れ電流:
英国のMantracourt Electronics社製のMC 190 Leakage test setを使用して漏れ電流(「DCL」)を測定した。MC190試験により、25℃の温度及び所定の定格電圧で10秒後の漏れ電流を測定した。
Claims (20)
- 陽極体と、誘電体と、前記誘電体の上にある固体電解質とを含む電解コンデンサを備えたコンデンサアセンブリであって、
前記陽極体に陽極リードが電気的に接続されるとともに該陽極体から縦方向に延び、
前記陽極リードの前記縦方向に概ね垂直に配置されて該陽極リードに接続する第1の部分を含むリードフレームと、
不活性ガスを含む気体雰囲気を有する内側キャビティを定め、内部に前記電解コンデンサ及び前記リードフレームの前記第1の部分が配置され密閉された前記セラミックハウジングと、
前記リードフレームに電気的に接続された陽極終端と、
前記固体電解質に電気的に接続された陰極終端と、
をさらに備えることを特徴とするコンデンサアセンブリ。 - 前記陽極がバルブ金属組成物から形成される、
ことを特徴とする請求項1に記載のコンデンサアセンブリ。 - 前記バルブ金属組成物がタンタル又はニオブ酸化物を含む、
ことを特徴とする請求項2に記載のコンデンサアセンブリ。 - 前記固体電解質が導電性ポリマーを含む、
ことを特徴とする請求項1に記載のコンデンサアセンブリ。 - 前記導電性ポリマーが、ポリピロール、ポリチオフェン、ポリアニリン、ポリアセチレン、ポリ‐p‐フェニレン、ポリフェノレート、又はこれらの組み合わせである、
ことを特徴とする請求項4に記載のコンデンサアセンブリ。 - 前記導電性ポリマーがポリ(3,4‐エチレンジオキシチオフェン)である、
ことを特徴とする請求項4に記載のコンデンサアセンブリ。 - 前記不活性ガスが、窒素、ヘリウム、アルゴン、キセノン、ネオン、クリプトン、ラドン、又はこれらの組み合わせを含む、
ことを特徴とする請求項1に記載のコンデンサアセンブリ。 - 不活性ガスが、前記気体雰囲気の約50重量%〜100重量%を構成する、
ことを特徴とする請求項1に記載のコンデンサアセンブリ。 - 不活性ガスが、前記気体雰囲気の約75重量%〜100重量%を構成する、
ことを特徴とする請求項1に記載のコンデンサアセンブリ。 - 酸素が、前記気体雰囲気の約1重量%未満を構成する、
ことを特徴とする請求項1に記載のコンデンサアセンブリ。 - 前記リードフレームが、前記陽極リードが延びる前記縦方向に概ね平行な第2の部分をさらに含む、
ことを特徴とする請求項1に記載のコンデンサアセンブリ。 - 導電性接着剤が、前記リードフレームの前記第2の部分を前記陽極終端に電気的に接続する、
ことを特徴とする請求項11に記載のコンデンサアセンブリ。 - 前記第2の部分が前記セラミックハウジング内に位置する、
ことを特徴とする請求項11に記載のコンデンサアセンブリ。 - 導電性接着剤が、前記固体電解質を前記陰極終端に電気的に接続する、
ことを特徴とする請求項1に記載のコンデンサアセンブリ。 - 前記陽極終端の第1の領域が前記セラミックハウジング内に位置し、前記陽極終端の第2の領域が前記セラミックハウジング外部に位置する、
ことを特徴とする請求項1に記載のコンデンサアセンブリ。 - 前記陰極終端の第1の領域が前記セラミックハウジング内に位置し、前記陰極終端の第2の領域が前記セラミックハウジング外部に位置する、
ことを特徴とする請求項1に記載のコンデンサアセンブリ。 - 前記リードフレームの前記第1の部分が、前記陽極リードに溶接によって接続される、
ことを特徴とする請求項1に記載のコンデンサアセンブリ。 - 前記リードフレームの前記第1の部分が、前記陽極リードを受け入れるU字形取付け領域を含む、
ことを特徴とする請求項1に記載のコンデンサアセンブリ。 - 前記セラミックハウジングに溶接又はハンダ付けされる蓋をさらに備える、
ことを特徴とする請求項1に記載のコンデンサアセンブリ。 - コンデンサアセンブリを形成する方法であって、
陽極体と、前記陽極体の上にある誘電体と、前記誘電体の上にある固体電解質とを含む電解コンデンサを提供するステップを含み、前記陽極体に陽極リードが電気的に接続されるとともに該陽極体から縦方向に延び、
前記陽極リードを、該陽極リードが延びる前記縦方向に対して概ね垂直に配置されたリードフレームの第1の部分に接続するステップと、
前記電解コンデンサと前記リードフレームの前記第1の部分とをセラミックハウジング内に配置するステップと、
前記コンデンサの前記固体電解質を陰極終端に電気的に接続するステップと、
前記リードフレームを陽極終端に電気的に接続するステップと、
前記セラミックハウジングを覆って蓋を配置するステップと、
前記セラミックハウジングを、不活性ガスを含む気体雰囲気中で前記蓋により密閉するステップと、
をさらに含むことを特徴とする方法。
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CN102034616B (zh) | 2014-09-17 |
US20120307420A1 (en) | 2012-12-06 |
US20110085285A1 (en) | 2011-04-14 |
US8780530B2 (en) | 2014-07-15 |
HK1156435A1 (en) | 2012-06-08 |
CN102034616A (zh) | 2011-04-27 |
US8194395B2 (en) | 2012-06-05 |
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