JP6165502B2 - 測定装置 - Google Patents

測定装置 Download PDF

Info

Publication number
JP6165502B2
JP6165502B2 JP2013104618A JP2013104618A JP6165502B2 JP 6165502 B2 JP6165502 B2 JP 6165502B2 JP 2013104618 A JP2013104618 A JP 2013104618A JP 2013104618 A JP2013104618 A JP 2013104618A JP 6165502 B2 JP6165502 B2 JP 6165502B2
Authority
JP
Japan
Prior art keywords
fet
film
oxide semiconductor
electrically connected
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013104618A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014002133A5 (enrdf_load_stackoverflow
JP2014002133A (ja
Inventor
高橋　圭
圭 高橋
昇 井上
昇 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2013104618A priority Critical patent/JP6165502B2/ja
Publication of JP2014002133A publication Critical patent/JP2014002133A/ja
Publication of JP2014002133A5 publication Critical patent/JP2014002133A5/ja
Application granted granted Critical
Publication of JP6165502B2 publication Critical patent/JP6165502B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/36—Overload-protection arrangements or circuits for electric measuring instruments
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06766—Input circuits therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/27—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2013104618A 2012-05-23 2013-05-17 測定装置 Expired - Fee Related JP6165502B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013104618A JP6165502B2 (ja) 2012-05-23 2013-05-17 測定装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012117197 2012-05-23
JP2012117197 2012-05-23
JP2013104618A JP6165502B2 (ja) 2012-05-23 2013-05-17 測定装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017121095A Division JP6562973B2 (ja) 2012-05-23 2017-06-21 測定装置

Publications (3)

Publication Number Publication Date
JP2014002133A JP2014002133A (ja) 2014-01-09
JP2014002133A5 JP2014002133A5 (enrdf_load_stackoverflow) 2016-06-23
JP6165502B2 true JP6165502B2 (ja) 2017-07-19

Family

ID=49621104

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2013104618A Expired - Fee Related JP6165502B2 (ja) 2012-05-23 2013-05-17 測定装置
JP2017121095A Expired - Fee Related JP6562973B2 (ja) 2012-05-23 2017-06-21 測定装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2017121095A Expired - Fee Related JP6562973B2 (ja) 2012-05-23 2017-06-21 測定装置

Country Status (2)

Country Link
US (1) US9817032B2 (enrdf_load_stackoverflow)
JP (2) JP6165502B2 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017181524A (ja) * 2012-05-23 2017-10-05 株式会社半導体エネルギー研究所 測定装置

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102472875B1 (ko) * 2013-12-26 2022-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6330415B2 (ja) * 2014-03-27 2018-05-30 富士通株式会社 半導体装置の製造方法
JP6537892B2 (ja) * 2014-05-30 2019-07-03 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
KR20250019744A (ko) * 2014-05-30 2025-02-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 발광 장치
US9910530B2 (en) * 2015-02-27 2018-03-06 Panasonic Liquid Crystal Display Co., Ltd. Display panel with touch detection function
TWI628721B (zh) * 2015-07-08 2018-07-01 聯華電子股份有限公司 氧化物半導體元件及其製造方法
JP2017022377A (ja) * 2015-07-14 2017-01-26 株式会社半導体エネルギー研究所 半導体装置
US10714633B2 (en) * 2015-12-15 2020-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US20170338252A1 (en) * 2016-05-17 2017-11-23 Innolux Corporation Display device
CN107403804B (zh) * 2016-05-17 2020-10-30 群创光电股份有限公司 显示设备
JP6917160B2 (ja) 2017-02-26 2021-08-11 住友化学株式会社 半導体基板、電子デバイス、半導体基板の検査方法および電子デバイスの製造方法
KR20200014801A (ko) * 2017-06-02 2020-02-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 부품, 및 전자 기기
JP7202319B2 (ja) * 2018-01-25 2023-01-11 株式会社半導体エネルギー研究所 半導体材料、および半導体装置
CN109781788B (zh) * 2019-01-30 2021-02-26 南通大学 一种纳米级绝缘薄膜电压-电流特性测量系统
CN109709151B (zh) * 2019-01-30 2021-02-09 南通大学 一种电介质薄膜电学性质测量系统
CN109709152B (zh) * 2019-01-30 2021-04-06 南通大学 一种用于fA～pA量级微弱电流的绝缘薄膜测量系统
US11916121B2 (en) * 2020-06-29 2024-02-27 Taiwan Semiconductor Manufacturing Company Limited Tri-gate orthogonal channel transistor and methods of forming the same
CN112731090A (zh) * 2020-12-24 2021-04-30 江西生益科技有限公司 在线测试覆铜板耐压性能的方法和装置
US20230008866A1 (en) * 2021-07-08 2023-01-12 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of making
WO2025062252A1 (ja) * 2023-09-22 2025-03-27 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (131)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4042881A (en) 1975-06-23 1977-08-16 Unitec, Inc. Voltage measuring device having an amplifier in the probe
US4205264A (en) 1978-04-25 1980-05-27 Charles Gold High impedance electrical testing instrument for AC and DC voltage detection and continuity testing
JPS5638853A (en) 1979-09-07 1981-04-14 Toshiba Corp System for protecting input and output of semiconductor integrated circuit
US4473857A (en) 1982-06-10 1984-09-25 Sencore, Inc. Input protection circuit for electronic instrument
JPS5950559A (ja) * 1982-09-16 1984-03-23 Hitachi Ltd 半導体装置保護回路
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
US4646002A (en) 1984-05-10 1987-02-24 Regents Of The University Of Minnesota Circuit for high impedance broad band probe
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JPH0658373U (ja) * 1993-01-25 1994-08-12 スタック電子株式会社 Ｆｅｔ増幅器の保護回路を備えたプローブ
JP3565893B2 (ja) 1994-02-04 2004-09-15 アジレント・テクノロジーズ・インク プローブ装置及び電気回路素子計測装置
JP2908240B2 (ja) 1994-05-31 1999-06-21 山形日本電気株式会社 電荷量の測定方法、静電エネルギーの測定方法及び電荷量測定装置
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
US5532608A (en) 1995-04-06 1996-07-02 International Business Machines Corporation Ceramic probe card and method for reducing leakage current
KR100394896B1 (ko) 1995-08-03 2003-11-28 코닌클리케 필립스 일렉트로닉스 엔.브이. 투명스위칭소자를포함하는반도체장치
DE19536948C2 (de) 1995-10-04 1999-07-15 Wandel & Goltermann Batteriebetriebenes Feldstärkehandmeßgerät und Verfahren zum Nullabgleich des Gerätes
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
US6603322B1 (en) 1996-12-12 2003-08-05 Ggb Industries, Inc. Probe card for high speed testing
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP2001133487A (ja) * 1999-11-01 2001-05-18 Mitsubishi Heavy Ind Ltd 電位センサ
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
EP1443130B1 (en) 2001-11-05 2011-09-28 Japan Science and Technology Agency Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
CN1445821A (zh) 2002-03-15 2003-10-01 三洋电机株式会社 ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
JP2003298057A (ja) 2002-03-29 2003-10-17 Advanced Lcd Technologies Development Center Co Ltd 液晶表示装置の入出力保護回路
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
US6731104B1 (en) 2002-12-05 2004-05-04 Tektronix, Inc. Measurement probe system with EOS/ESD protection
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
JP4620046B2 (ja) 2004-03-12 2011-01-26 独立行政法人科学技術振興機構 薄膜トランジスタ及びその製造方法
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
EP2455975B1 (en) 2004-11-10 2015-10-28 Canon Kabushiki Kaisha Field effect transistor with amorphous oxide
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
KR100889796B1 (ko) 2004-11-10 2009-03-20 캐논 가부시끼가이샤 비정질 산화물을 사용한 전계 효과 트랜지스터
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
CN101057333B (zh) 2004-11-10 2011-11-16 佳能株式会社 发光器件
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI390735B (zh) 2005-01-28 2013-03-21 Semiconductor Energy Lab 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI412138B (zh) 2005-01-28 2013-10-11 Semiconductor Energy Lab 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
WO2006105077A2 (en) 2005-03-28 2006-10-05 Massachusetts Institute Of Technology Low voltage thin film transistor with high-k dielectric material
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
CN101577256B (zh) 2005-11-15 2011-07-27 株式会社半导体能源研究所 半导体器件及其制造方法
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
US8067718B2 (en) * 2006-05-04 2011-11-29 Tektronix, Inc. Method and apparatus for probing
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
US8274078B2 (en) 2007-04-25 2012-09-25 Canon Kabushiki Kaisha Metal oxynitride semiconductor containing zinc
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
US8202365B2 (en) 2007-12-17 2012-06-19 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
KR101722913B1 (ko) * 2008-09-12 2017-04-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
US8138775B2 (en) * 2008-12-09 2012-03-20 Lexmark International, Inc. CMOS-controlled printhead sense circuit in inkjet printer
CN102422426B (zh) * 2009-05-01 2016-06-01 株式会社半导体能源研究所 半导体装置的制造方法
BRPI1011202A2 (pt) * 2009-06-09 2016-03-15 Sharp Kk dispositivo semicondutor
US8921857B2 (en) * 2009-06-18 2014-12-30 Sharp Kabushiki Kaisha Semiconductor device
JP2011066482A (ja) * 2009-09-15 2011-03-31 Sanyo Electric Co Ltd 駆動回路
US8154346B2 (en) * 2009-11-06 2012-04-10 IML International Ltd Short circuits and power limit protection circuits
JP5656325B2 (ja) * 2009-11-13 2015-01-21 株式会社半導体エネルギー研究所 非線形素子、及び表示装置
WO2011065209A1 (en) 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
KR101800850B1 (ko) 2010-01-29 2017-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
US8928466B2 (en) 2010-08-04 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8941958B2 (en) * 2011-04-22 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8730625B2 (en) * 2011-09-22 2014-05-20 Freescale Semiconductor, Inc. Electrostatic discharge protection circuit for an integrated circuit
FR2987496A1 (fr) * 2012-02-29 2013-08-30 St Microelectronics Rousset Circuit de protection contre les decharges electrostatiques
US9817032B2 (en) * 2012-05-23 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Measurement device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017181524A (ja) * 2012-05-23 2017-10-05 株式会社半導体エネルギー研究所 測定装置

Also Published As

Publication number Publication date
JP2017181524A (ja) 2017-10-05
US9817032B2 (en) 2017-11-14
US20130314074A1 (en) 2013-11-28
JP6562973B2 (ja) 2019-08-21
JP2014002133A (ja) 2014-01-09

Similar Documents

Publication Publication Date Title
JP6562973B2 (ja) 測定装置
JP6564824B2 (ja) 半導体装置
US9755083B2 (en) Semiconductor device and method for manufacturing the same
CN104185898B (zh) 绝缘膜、半导体装置的制造方法以及半导体装置
TWI611557B (zh) 半導體裝置
CN101740636B (zh) 薄膜晶体管和显示装置
JP6483750B2 (ja) 半導体装置の作製方法
US20150022251A1 (en) Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
KR20160132982A (ko) 반도체 장치와 그 제작 방법
TW201144969A (en) Voltage regulator circuit
WO2016076168A1 (ja) 半導体装置およびその製造方法
TW201143264A (en) Voltage regulator circuit
US8304781B2 (en) Circuit board provided with monolithic circuit having thin film transistor on substrate, and display device having the circuit board
JP6981786B2 (ja) トランジスタ及び電子機器
JP6487581B2 (ja) 半導体装置
JP2014003594A (ja) 半導体装置及びその駆動方法
US20240395824A1 (en) Back-end-of-line cmos inverter with vertical channels and methods of forming the same
TWI858808B (zh) 半導體裝置結構、其形成方法及半導體裝置
JP2019186443A (ja) 半導体装置
JP2017103260A (ja) トランジスタ、および、トランジスタの製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160510

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160510

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170215

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170221

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170322

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170523

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170621

R150 Certificate of patent or registration of utility model

Ref document number: 6165502

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees