CN101740636B - 薄膜晶体管和显示装置 - Google Patents
薄膜晶体管和显示装置 Download PDFInfo
- Publication number
- CN101740636B CN101740636B CN2009102245271A CN200910224527A CN101740636B CN 101740636 B CN101740636 B CN 101740636B CN 2009102245271 A CN2009102245271 A CN 2009102245271A CN 200910224527 A CN200910224527 A CN 200910224527A CN 101740636 B CN101740636 B CN 101740636B
- Authority
- CN
- China
- Prior art keywords
- oxide semiconductor
- semiconductor film
- metal
- film
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 52
- 229910052751 metal Inorganic materials 0.000 claims abstract description 116
- 239000002184 metal Substances 0.000 claims abstract description 116
- 239000010408 film Substances 0.000 claims abstract description 113
- 239000004065 semiconductor Substances 0.000 claims abstract description 90
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 23
- 239000011733 molybdenum Substances 0.000 claims abstract description 23
- 238000003475 lamination Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 38
- 239000001301 oxygen Substances 0.000 abstract description 36
- 229910052760 oxygen Inorganic materials 0.000 abstract description 36
- 230000004888 barrier function Effects 0.000 abstract description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 7
- 150000004767 nitrides Chemical class 0.000 abstract description 6
- 230000006866 deterioration Effects 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 19
- 238000000137 annealing Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 9
- 239000002800 charge carrier Substances 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000010276 construction Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 229910007541 Zn O Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
Abstract
Description
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008293043A JP2010123595A (ja) | 2008-11-17 | 2008-11-17 | 薄膜トランジスタおよび表示装置 |
JP2008-293043 | 2008-11-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101740636A CN101740636A (zh) | 2010-06-16 |
CN101740636B true CN101740636B (zh) | 2013-06-19 |
Family
ID=42171262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009102245271A Active CN101740636B (zh) | 2008-11-17 | 2009-11-17 | 薄膜晶体管和显示装置 |
Country Status (3)
Country | Link |
---|---|
US (2) | US8319226B2 (zh) |
JP (1) | JP2010123595A (zh) |
CN (1) | CN101740636B (zh) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9991311B2 (en) | 2008-12-02 | 2018-06-05 | Arizona Board Of Regents On Behalf Of Arizona State University | Dual active layer semiconductor device and method of manufacturing the same |
US9601530B2 (en) | 2008-12-02 | 2017-03-21 | Arizona Board Of Regents, A Body Corporated Of The State Of Arizona, Acting For And On Behalf Of Arizona State University | Dual active layer semiconductor device and method of manufacturing the same |
US20140008651A1 (en) * | 2008-12-02 | 2014-01-09 | Arizona Board of Regents, a body corporate of the State of Arizona Acting for and on behalf of Arizo | Dual active layers for semiconductor devices and methods of manufacturing the same |
US9721825B2 (en) | 2008-12-02 | 2017-08-01 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University | Method of providing a flexible semiconductor device and flexible semiconductor device thereof |
KR101797253B1 (ko) * | 2009-12-04 | 2017-11-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
KR102241766B1 (ko) | 2009-12-04 | 2021-04-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
TWI509707B (zh) * | 2010-08-16 | 2015-11-21 | Semiconductor Energy Lab | 半導體裝置之製造方法 |
JP2012119664A (ja) * | 2010-11-12 | 2012-06-21 | Kobe Steel Ltd | 配線構造 |
JP5982125B2 (ja) | 2011-01-12 | 2016-08-31 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5743064B2 (ja) * | 2011-02-17 | 2015-07-01 | 株式会社Joled | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
CN103137701B (zh) * | 2011-11-30 | 2018-01-19 | 株式会社半导体能源研究所 | 晶体管及半导体装置 |
CN102646699B (zh) * | 2012-01-13 | 2014-12-10 | 京东方科技集团股份有限公司 | 一种氧化物薄膜晶体管及其制备方法 |
WO2013111533A1 (ja) * | 2012-01-23 | 2013-08-01 | シャープ株式会社 | 薄膜トランジスタ基板の製造方法及びその方法により製造された薄膜トランジスタ基板 |
CN102651322A (zh) * | 2012-02-27 | 2012-08-29 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制造方法、阵列基板、显示器件 |
KR20130126240A (ko) | 2012-05-11 | 2013-11-20 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 |
JP6059501B2 (ja) * | 2012-10-17 | 2017-01-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR102001057B1 (ko) | 2012-10-31 | 2019-07-18 | 엘지디스플레이 주식회사 | 어레이 기판의 제조방법 |
US10381224B2 (en) | 2014-01-23 | 2019-08-13 | Arizona Board Of Regents On Behalf Of Arizona State University | Method of providing an electronic device and electronic device thereof |
WO2015156891A2 (en) | 2014-01-23 | 2015-10-15 | Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University | Method of providing a flexible semiconductor device and flexible semiconductor device thereof |
WO2017034644A2 (en) | 2015-06-09 | 2017-03-02 | ARIZONA BOARD OF REGENTS a body corporate for THE STATE OF ARIZONA for and on behalf of ARIZONA STATE UNIVERSITY | Method of providing an electronic device and electronic device thereof |
JP2015158572A (ja) * | 2014-02-24 | 2015-09-03 | 株式会社Joled | 表示装置、電子機器 |
CN106663640B (zh) | 2014-05-13 | 2020-01-07 | 代表亚利桑那大学的亚利桑那校董会 | 提供电子器件的方法及其电子器件 |
US10446582B2 (en) | 2014-12-22 | 2019-10-15 | Arizona Board Of Regents On Behalf Of Arizona State University | Method of providing an imaging system and imaging system thereof |
US9741742B2 (en) | 2014-12-22 | 2017-08-22 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University | Deformable electronic device and methods of providing and using deformable electronic device |
CN105785684A (zh) * | 2014-12-25 | 2016-07-20 | 业鑫科技顾问股份有限公司 | 薄膜晶体管基板、其制作方法及使用之液晶显示面板 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000002892A (ja) * | 1998-04-17 | 2000-01-07 | Toshiba Corp | 液晶表示装置、マトリクスアレイ基板およびその製造方法 |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
KR100799463B1 (ko) * | 2001-03-21 | 2008-02-01 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그 제조방법 |
US20030122987A1 (en) * | 2001-12-28 | 2003-07-03 | Myung-Joon Kim | Array substrate for a liquid crystal display device having multi-layered metal line and fabricating method thereof |
JP3672256B2 (ja) * | 2002-08-08 | 2005-07-20 | インターナショナル・ビジネス・マシーンズ・コーポレーション | エッチング液、薄膜トランジスタ・アレイ基板、薄膜トランジスタ・アレイ基板の製造方法および表示装置 |
KR101012491B1 (ko) * | 2003-12-04 | 2011-02-08 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판과 제조방법 |
JP4299717B2 (ja) * | 2004-04-14 | 2009-07-22 | Nec液晶テクノロジー株式会社 | 薄膜トランジスタとその製造方法 |
KR101107246B1 (ko) * | 2004-12-24 | 2012-01-25 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
US7411298B2 (en) * | 2005-08-17 | 2008-08-12 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices |
EP1998375A3 (en) * | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method |
JP5064747B2 (ja) * | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
JP4793679B2 (ja) | 2005-11-10 | 2011-10-12 | 富士電機株式会社 | 薄膜トランジスタ |
TWI320233B (en) * | 2006-09-12 | 2010-02-01 | Pixel structure and fabricating method thereof | |
KR20080037296A (ko) * | 2006-10-25 | 2008-04-30 | 삼성전자주식회사 | 박막 트랜지스터 기판 및 그 제조방법 |
JP5305630B2 (ja) * | 2006-12-05 | 2013-10-02 | キヤノン株式会社 | ボトムゲート型薄膜トランジスタの製造方法及び表示装置の製造方法 |
JP2008235871A (ja) * | 2007-02-20 | 2008-10-02 | Canon Inc | 薄膜トランジスタの形成方法及び表示装置 |
US7935964B2 (en) * | 2007-06-19 | 2011-05-03 | Samsung Electronics Co., Ltd. | Oxide semiconductors and thin film transistors comprising the same |
JP5213422B2 (ja) | 2007-12-04 | 2013-06-19 | キヤノン株式会社 | 絶縁層を有する酸化物半導体素子およびそれを用いた表示装置 |
-
2008
- 2008-11-17 JP JP2008293043A patent/JP2010123595A/ja active Pending
-
2009
- 2009-11-16 US US12/619,299 patent/US8319226B2/en active Active
- 2009-11-17 CN CN2009102245271A patent/CN101740636B/zh active Active
-
2012
- 2012-06-26 US US13/533,328 patent/US20120267625A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN101740636A (zh) | 2010-06-16 |
JP2010123595A (ja) | 2010-06-03 |
US20100123131A1 (en) | 2010-05-20 |
US20120267625A1 (en) | 2012-10-25 |
US8319226B2 (en) | 2012-11-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101740636B (zh) | 薄膜晶体管和显示装置 | |
JP7058724B2 (ja) | Tft基板とその製造方法、及びoledパネルの製造方法 | |
JP5668917B2 (ja) | 薄膜トランジスタおよびその製造方法 | |
CN101794821B (zh) | 薄膜晶体管和显示装置 | |
CN102097487B (zh) | 氧化物半导体薄膜晶体管及其制造方法 | |
JP6059566B2 (ja) | 半導体装置の作製方法 | |
JP5552753B2 (ja) | 薄膜トランジスタおよび表示装置 | |
US8431927B2 (en) | Thin film transistor, method of manufacturing the same, and organic electroluminescent device including thin film transistor | |
TWI493723B (zh) | 薄膜電晶體、薄膜電晶體的製造方法及顯示器 | |
US20130277660A1 (en) | Thin film transistor and flat panel display device having the same | |
US9768322B2 (en) | Metal oxide TFT with improved source/drain contacts and reliability | |
JP2011187506A (ja) | 薄膜トランジスタおよびその製造方法、並びに表示装置 | |
KR20110113568A (ko) | 박막 트랜지스터 및 표시 장치 및 전자 기기 | |
US20160204126A1 (en) | Thin-film transistor substrate and method for fabricating the same | |
JP2010135462A (ja) | 薄膜トランジスタ、表示装置および薄膜トランジスタの製造方法 | |
US20160336386A1 (en) | Thin-film transistor substrate and method of manufacturing the thin-film transistor substrate | |
US11205729B2 (en) | Semiconductor device and method for manufacturing same | |
US10020324B2 (en) | Display device | |
US9698273B2 (en) | Thin film transistor, method of manufacturing the same, display unit, and electronic apparatus | |
CN102683383A (zh) | 显示装置和电子设备 | |
WO2014196107A1 (ja) | 薄膜トランジスタ素子とその製造方法及び表示装置 | |
US10551704B2 (en) | Active matrix substrate method of manufacturing active matrix substrate, and display device | |
JP5527225B2 (ja) | 薄膜トランジスタおよび表示装置 | |
JP2016103605A (ja) | 薄膜トランジスタおよびその製造方法、ならびに表示装置および電子機器 | |
JP2013165108A (ja) | 薄膜トランジスタ、薄膜トランジスタの製造方法、表示装置および電子機器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: JANPAN ORGANIC RATE DISPLAY CO., LTD. Free format text: FORMER OWNER: SONY CORPORATION Effective date: 20150812 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150812 Address after: Tokyo, Japan Patentee after: JOLED Inc. Address before: Tokyo, Japan Patentee before: Sony Corp. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231126 Address after: Tokyo, Japan Patentee after: Japan Display Design and Development Contract Society Address before: Tokyo, Japan Patentee before: JOLED Inc. |