JP6126349B2 - 半導体装置及び半導体装置の作製方法 - Google Patents
半導体装置及び半導体装置の作製方法 Download PDFInfo
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- JP6126349B2 JP6126349B2 JP2012222924A JP2012222924A JP6126349B2 JP 6126349 B2 JP6126349 B2 JP 6126349B2 JP 2012222924 A JP2012222924 A JP 2012222924A JP 2012222924 A JP2012222924 A JP 2012222924A JP 6126349 B2 JP6126349 B2 JP 6126349B2
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Description
本実施の形態では、半導体装置及び半導体装置の作製方法の一形態を、図1を用いて説明する。本実施の形態では、半導体装置の一例として酸化物半導体膜を有するトランジスタを示す。
本実施の形態では、半導体装置及び半導体装置の作製方法の他の一形態を、図5を用いて説明する。上記実施の形態と同一部分又は同様な機能を有する部分、及び工程は、上記実施の形態と同様に行うことができ、繰り返しの説明は省略する。また同じ箇所の詳細な説明は省略する。
本実施の形態では、本明細書に示すトランジスタを使用し、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置の一例を、図面を用いて説明する。
本実施の形態においては、実施の形態1乃至3に示すトランジスタを使用し、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置について、実施の形態3に示した構成と異なる構成について、図7及び図8を用いて説明を行う。
本実施の形態では、先の実施の形態で示した半導体装置を携帯電話、スマートフォン、電子書籍などの携帯機器に応用した場合の例を図9乃至図12を用いて説明する。
Claims (9)
- 酸化物絶縁膜上の、酸化物半導体膜と、
前記酸化物半導体膜上の、ゲート絶縁膜と、
前記ゲート絶縁膜を介して、前記酸化物半導体膜のチャネル形成領域と重畳する領域を有する、ゲート電極層と、
前記ゲート電極層の上面及び側面を覆う第1の絶縁膜と、
前記酸化物半導体膜下の、第1の電極層と、
前記酸化物半導体膜下の、第2の電極層と、
前記酸化物半導体膜上の、第1の配線層と、
前記酸化物半導体膜上の、第2の配線層と、を有し、
前記酸化物半導体膜は、前記チャネル形成領域と、第1の低抵抗領域と、第2の低抵抗領域と、を有し、
前記第1の低抵抗領域及び前記第2の低抵抗領域は、それぞれ、ドーパントを有し、
前記第1の電極層は、前記第1の低抵抗領域と電気的に接続され、
前記第1の配線層は、前記第1の低抵抗領域と電気的に接続され、
前記第1の配線層は、前記第1の電極層と重なる領域を有し、
前記第2の電極層は、前記第2の低抵抗領域と電気的に接続され、
前記第2の配線層は、前記第2の低抵抗領域と電気的に接続され、
前記第2の配線層は、前記第2の電極層と重なる領域を有し、
前記第1の配線層は、前記ゲート電極層上の前記第1の絶縁膜の上面の一部と接する領域と、前記第1の絶縁膜の側面の一部に接する領域と、を有し、
前記第2の配線層は、前記ゲート電極層上の前記第1の絶縁膜の上面の一部と接する領域と、前記第1の絶縁膜の側面の一部に接する領域と、を有し、
前記第1の絶縁膜は、酸化アルミニウム膜を有することを特徴とする半導体装置。 - 酸化物絶縁膜上の、酸化物半導体膜と、
前記酸化物半導体膜上の、ゲート絶縁膜と、
前記ゲート絶縁膜を介して、前記酸化物半導体膜のチャネル形成領域と重畳する領域を有する、ゲート電極層と、
前記ゲート電極層の上面及び側面を覆う第1の絶縁膜と、
前記酸化物半導体膜下の、第1の電極層と、
前記酸化物半導体膜下の、第2の電極層と、
前記酸化物半導体膜上の、第1の配線層と、
前記酸化物半導体膜上の、第2の配線層と、を有し、
前記酸化物半導体膜は、前記チャネル形成領域と、第1の低抵抗領域と、第2の低抵抗領域と、を有し、
前記第1の電極層は、前記第1の低抵抗領域と電気的に接続され、
前記第1の配線層は、前記第1の低抵抗領域と電気的に接続され、
前記第1の配線層は、前記第1の電極層と重なる領域を有し、
前記第2の電極層は、前記第2の低抵抗領域と電気的に接続され、
前記第2の配線層は、前記第2の低抵抗領域と電気的に接続され、
前記第2の配線層は、前記第2の電極層と重なる領域を有し、
前記第1の配線層は、前記ゲート電極層上の前記第1の絶縁膜の上面の一部と接する領域と、前記第1の絶縁膜の側面の一部に接する領域と、を有し、
前記第2の配線層は、前記ゲート電極層上の前記第1の絶縁膜の上面の一部と接する領域と、前記第1の絶縁膜の側面の一部に接する領域と、を有し、
前記第1の絶縁膜は、酸化アルミニウム膜を有することを特徴とする半導体装置。 - 酸化物絶縁膜上の、酸化物半導体膜と、
前記酸化物半導体膜上の、ゲート絶縁膜と、
前記ゲート絶縁膜を介して、前記酸化物半導体膜のチャネル形成領域と重畳する領域を有する、ゲート電極層と、
前記ゲート電極層の上面及び側面を覆う第1の絶縁膜と、
前記酸化物半導体膜下の、第1の電極層と、
前記酸化物半導体膜下の、第2の電極層と、
前記酸化物半導体膜上の、第1の配線層と、
前記酸化物半導体膜上の、第2の配線層と、を有し、
前記酸化物半導体膜は、前記チャネル形成領域と、第1の低抵抗領域と、第2の低抵抗領域と、を有し、
前記第1の電極層は、前記第1の低抵抗領域と電気的に接続され、
前記第1の配線層は、前記第1の低抵抗領域と電気的に接続され、
前記第1の配線層は、前記第1の電極層と重なる領域を有し、
前記第2の電極層は、前記第2の低抵抗領域と電気的に接続され、
前記第2の配線層は、前記第2の低抵抗領域と電気的に接続され、
前記第2の配線層は、前記第2の電極層と重なる領域を有し、
前記第1の絶縁膜は、酸化アルミニウム膜を有することを特徴とする半導体装置。 - 請求項1乃至請求項3のいずれか一において、
前記第1の絶縁膜は前記酸化物半導体膜と接することを特徴とする半導体装置。 - 請求項1乃至請求項4のいずれか一において、
前記第1の電極層及び前記第2の電極層は、それぞれ前記酸化物絶縁膜に埋め込まれて設けられることを特徴とする半導体装置。 - 酸化物絶縁膜を形成し、
前記酸化物絶縁膜の開口部に、電極層を形成し、
前記酸化物絶縁膜及び前記電極層上に酸化物半導体膜を形成し、
前記酸化物半導体膜上にゲート絶縁膜を形成し、
前記ゲート絶縁膜上に前記酸化物半導体膜と重なる領域を有するゲート電極層を形成し、
前記ゲート電極層をマスクとして前記酸化物半導体膜にドーパントを選択的に導入して低抵抗領域を形成し、
前記ゲート電極層の上面及び側面を覆う、第1の絶縁膜を形成し、
前記低抵抗領域と電気的に接続された、配線層を形成する半導体装置の作製方法であって、
前記第1の絶縁膜は、酸化アルミニウム膜を有し、
前記配線層は、前記ゲート電極層上の前記第1の絶縁膜の上面の一部と接する領域と、前記第1の絶縁膜の側面の一部に接する領域とを有し、
前記配線層は、前記電極層と重なる領域を有することを特徴とする半導体装置の作製方法。 - 酸化物絶縁膜を形成し、
前記酸化物絶縁膜の開口部に、電極層を形成し、
前記酸化物絶縁膜及び前記電極層上に酸化物半導体膜を形成し、
前記酸化物半導体膜上にゲート絶縁膜を形成し、
前記ゲート絶縁膜上に前記酸化物半導体膜と重なる領域を有するゲート電極層を形成し、
前記ゲート電極層をマスクとして前記酸化物半導体膜にドーパントを選択的に導入して低抵抗領域を形成し、
前記ゲート電極層の上面及び側面を覆う、第1の絶縁膜を形成し、
前記低抵抗領域と電気的に接続された、配線層を形成する半導体装置の作製方法であって、
前記第1の絶縁膜は、酸化アルミニウム膜を有し、
前記配線層は、前記電極層と重なる領域を有することを特徴とする半導体装置の作製方法。 - 請求項6又は請求項7において、
前記ゲート電極層を形成した後、前記ゲート電極層をマスクとして、前記ゲート絶縁膜をエッチングする工程を有し、
前記第1の絶縁膜を、前記酸化物半導体膜と接するように形成することを特徴とする半導体装置の作製方法。 - 請求項6乃至請求項8のいずれか一において、
前記酸化物半導体膜を形成する前に前記酸化物絶縁膜表面に平坦化処理を行うことを特徴とする半導体装置の作製方法。
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US20130092924A1 (en) | 2013-04-18 |
US9287405B2 (en) | 2016-03-15 |
JP6345831B2 (ja) | 2018-06-20 |
US9728648B2 (en) | 2017-08-08 |
US20160126360A1 (en) | 2016-05-05 |
US20170358685A1 (en) | 2017-12-14 |
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JP7220273B2 (ja) | 2023-02-09 |
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JP2017123495A (ja) | 2017-07-13 |
JP2013102141A (ja) | 2013-05-23 |
KR20200026865A (ko) | 2020-03-11 |
KR102087246B1 (ko) | 2020-03-10 |
JP2020043371A (ja) | 2020-03-19 |
US10153375B2 (en) | 2018-12-11 |
KR20130040135A (ko) | 2013-04-23 |
JP6633129B2 (ja) | 2020-01-22 |
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