JP5945391B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5945391B2
JP5945391B2 JP2011195363A JP2011195363A JP5945391B2 JP 5945391 B2 JP5945391 B2 JP 5945391B2 JP 2011195363 A JP2011195363 A JP 2011195363A JP 2011195363 A JP2011195363 A JP 2011195363A JP 5945391 B2 JP5945391 B2 JP 5945391B2
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Prior art keywords
oxide semiconductor
layer
semiconductor layer
conductive film
film
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JP2011195363A
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Japanese (ja)
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JP2012084852A (ja
JP2012084852A5 (enExample
Inventor
正美 神長
正美 神長
大和 相原
大和 相原
克明 栃林
克明 栃林
徹 荒川
徹 荒川
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2012084852A5 publication Critical patent/JP2012084852A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
    • H01L21/4757—After-treatment
    • H01L21/47573—Etching the layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Non-Volatile Memory (AREA)
JP2011195363A 2010-09-13 2011-09-07 半導体装置の作製方法 Active JP5945391B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011195363A JP5945391B2 (ja) 2010-09-13 2011-09-07 半導体装置の作製方法

Applications Claiming Priority (3)

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JP2010204685 2010-09-13
JP2010204685 2010-09-13
JP2011195363A JP5945391B2 (ja) 2010-09-13 2011-09-07 半導体装置の作製方法

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Publications (3)

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JP2012084852A JP2012084852A (ja) 2012-04-26
JP2012084852A5 JP2012084852A5 (enExample) 2014-10-16
JP5945391B2 true JP5945391B2 (ja) 2016-07-05

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JP2011195363A Active JP5945391B2 (ja) 2010-09-13 2011-09-07 半導体装置の作製方法
JP2016107078A Active JP6306641B2 (ja) 2010-09-13 2016-05-30 半導体装置の作製方法
JP2018041775A Active JP6474929B2 (ja) 2010-09-13 2018-03-08 半導体装置の作製方法
JP2019013802A Active JP6685440B2 (ja) 2010-09-13 2019-01-30 半導体装置の作製方法
JP2020063200A Active JP6957668B2 (ja) 2010-09-13 2020-03-31 半導体装置の作製方法
JP2021164408A Withdrawn JP2022003698A (ja) 2010-09-13 2021-10-06 半導体装置の作製方法
JP2022049862A Active JP7300031B2 (ja) 2010-09-13 2022-03-25 半導体装置
JP2023099055A Active JP7514980B2 (ja) 2010-09-13 2023-06-16 半導体装置
JP2024105903A Active JP7583972B2 (ja) 2010-09-13 2024-07-01 半導体装置
JP2024192655A Active JP7719937B2 (ja) 2010-09-13 2024-11-01 半導体装置
JP2025124523A Pending JP2025146916A (ja) 2010-09-13 2025-07-25 半導体装置

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JP2016107078A Active JP6306641B2 (ja) 2010-09-13 2016-05-30 半導体装置の作製方法
JP2018041775A Active JP6474929B2 (ja) 2010-09-13 2018-03-08 半導体装置の作製方法
JP2019013802A Active JP6685440B2 (ja) 2010-09-13 2019-01-30 半導体装置の作製方法
JP2020063200A Active JP6957668B2 (ja) 2010-09-13 2020-03-31 半導体装置の作製方法
JP2021164408A Withdrawn JP2022003698A (ja) 2010-09-13 2021-10-06 半導体装置の作製方法
JP2022049862A Active JP7300031B2 (ja) 2010-09-13 2022-03-25 半導体装置
JP2023099055A Active JP7514980B2 (ja) 2010-09-13 2023-06-16 半導体装置
JP2024105903A Active JP7583972B2 (ja) 2010-09-13 2024-07-01 半導体装置
JP2024192655A Active JP7719937B2 (ja) 2010-09-13 2024-11-01 半導体装置
JP2025124523A Pending JP2025146916A (ja) 2010-09-13 2025-07-25 半導体装置

Country Status (3)

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US (3) US8664097B2 (enExample)
JP (11) JP5945391B2 (enExample)
KR (2) KR101468264B1 (enExample)

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US8664097B2 (en) * 2010-09-13 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8932913B2 (en) 2011-04-22 2015-01-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8916868B2 (en) 2011-04-22 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8809854B2 (en) 2011-04-22 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8878288B2 (en) 2011-04-22 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8847233B2 (en) 2011-05-12 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film
JP5933895B2 (ja) 2011-11-10 2016-06-15 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
JP6059566B2 (ja) * 2012-04-13 2017-01-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9006024B2 (en) * 2012-04-25 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9153650B2 (en) 2013-03-19 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor
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TWI608523B (zh) 2013-07-19 2017-12-11 半導體能源研究所股份有限公司 Oxide semiconductor film, method of manufacturing oxide semiconductor film, and semiconductor device
WO2015125042A1 (en) 2014-02-19 2015-08-27 Semiconductor Energy Laboratory Co., Ltd. Oxide, semiconductor device, module, and electronic device
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JP6667400B2 (ja) * 2016-08-12 2020-03-18 東京エレクトロン株式会社 プラズマエッチング方法およびプラズマエッチングシステム
JP6345842B2 (ja) * 2017-05-02 2018-06-20 株式会社半導体エネルギー研究所 半導体装置
JP7199174B2 (ja) * 2018-07-26 2023-01-05 東京エレクトロン株式会社 エッチング方法
JP2024000648A (ja) 2022-06-21 2024-01-09 キオクシア株式会社 半導体装置及び半導体記憶装置

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