JP5889091B2 - 制御された雰囲気を有する電気機械的システム及びこのシステムを製造する方法 - Google Patents
制御された雰囲気を有する電気機械的システム及びこのシステムを製造する方法 Download PDFInfo
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- JP5889091B2 JP5889091B2 JP2012087867A JP2012087867A JP5889091B2 JP 5889091 B2 JP5889091 B2 JP 5889091B2 JP 2012087867 A JP2012087867 A JP 2012087867A JP 2012087867 A JP2012087867 A JP 2012087867A JP 5889091 B2 JP5889091 B2 JP 5889091B2
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00293—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS maintaining a controlled atmosphere with processes not provided for in B81C1/00285
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0136—Growing or depositing of a covering layer
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
- Gyroscopes (AREA)
- Treatment Of Fiber Materials (AREA)
Description
図9に示された実施形態において、微細加工された機械的構造体12a〜cは、図1〜8Cに示されかつ上に説明された機械的構造体12と同じ特徴、属性、選択肢、材料及び利点を有していてよく、かつ同じ形式で製造されてよい。簡単にするために、これらの特徴、属性、選択肢、材料、技術及び利点はここでは再び述べられない。
Claims (19)
- 機械的構造体を有する電気機械的装置のチャンバをシールする方法において、前記機械的構造体がチャンバ内に配置されており、該チャンバが、機械的構造体のための機械的減衰を提供することができる第1の流体を含んでおり、該流体が、少なくとも1つの比較的安定したガスを含んでおり、前記方法が、
機械的構造体の少なくとも一部の上に犠牲層を堆積させ、
該犠牲層の上に第1の封止層を堆積させ、
犠牲層の少なくとも一部を露出させるように第1の封止層を貫通して少なくとも1つのベントを形成し、
犠牲層の少なくとも一部を除去してチャンバを形成し、
少なくとも1つの比較的安定したガスをチャンバに導入して前記流体の一部を形成し、
少なくとも1つのベント上又は少なくとも1つのベント内に第2の封止層を堆積させ、これにより、チャンバ内に前記流体をシールし、
この場合、前記第2の封止層が半導体材料であり、前記第2の封止層の堆積は、前記流体の別の一部として、前記第2の封止層を形成するために使用されたガスにより生じる少なくとも1つの副生成ガスを生成することを特徴とする、機械的構造体を有する電気機械的装置のチャンバをシールする方法。 - 前記少なくとも1つの比較的安定したガスが、ヘリウム、窒素、ネオン、アルゴン、クリプトン、キセノン又は過フルオロ化ハイドロフルオロカーボンである、請求項1記載の方法。
- 前記電気機械的装置が、マイクロ電気機械的装置である、請求項2記載の方法。
- 前記電気機械的装置が、ナノ電気機械的装置である、請求項2記載の方法。
- 前記第2の封止層が、(a)シリコン含有化合物を含んでいるか又は(b)ゲルマニウム又は砒化ガリウムのうちの1つである、請求項1記載の方法。
- 前記第2の封止層が、単結晶シリコン、多結晶シリコン、非晶質シリコン、又はシリコン/ゲルマニウムのうちの1つである、請求項1記載の方法。
- 第2の封止層を堆積させることが、エピタキシャル又はCVDリアクタを使用することを含む、請求項1記載の方法。
- 比較的安定したガスが、低い拡散率を有している、請求項1記載の方法。
- 流体の圧力を所定の圧力範囲内に調節するために、流体をチャンバ内で加熱するか又はガスをチャンバ内に拡散させる、請求項1記載の方法。
- 電気機械的装置が加速度計であり、チャンバ内の流体の圧力が、機械的構造体のための十分な機械的減衰を提供するように十分に高い、請求項1記載の方法。
- 機械的減衰特性を選択するステップと、選択された当該機械的減衰特性に基づいて、前記第2の封止層の堆積のための少なくとも1つのパラメータを選択するステップと、を含む、請求項1記載の方法。
- 前記第2の封止層は、400℃よりも低い温度で堆積される、請求項1記載の方法。
- 前記第2の封止層は、化学的気相成長(CVD)を用いて、0.1−10kPaの圧力下且つ350−400℃の温度で堆積される、請求項1記載の方法。
- 前記第2の封止層は、常圧CVDプロセス(APCVD)を用いて堆積される、請求項1記載の方法。
- 前記第2の封止層は、エピタキシャル堆積法を用いて、1−2気圧且つ400−1,200℃の温度で堆積される、請求項1記載の方法。
- 前記第2の封止層の堆積に続いて、流体の第3の部分を前記第2の封止層を介してチャンバ内へ拡散するステップを含む、請求項1記載の方法。
- 前記拡散は、第3の封止層を堆積している間に行われ、第3の封止層は、得られた流体をチャンバ内で捕捉する、請求項1記載の方法。
- 前記第2の封止層の堆積に続いて、微細加工を行ってチャンバ内の流体の圧力を減じる、請求項1記載の方法。
- (a)前記電気機械的装置は、他のチャンバを密閉する封止層の堆積中に少なくとも部分的に発生した流体で満たされた別のチャンバを含み、
(b)他のチャンバを密閉する封止の堆積は、当該他のチャンバ内の流体が第1の流体とは異なる機械的減衰を提供するように、第2の封止層の堆積に使用されるものとは異なる少なくとも1つの堆積パラメータを用いて行われる、請求項1記載の方法。
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US10/392528 | 2003-03-20 | ||
US10/392,528 US7514283B2 (en) | 2003-03-20 | 2003-03-20 | Method of fabricating electromechanical device having a controlled atmosphere |
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JP2004081289A Division JP5021153B2 (ja) | 2003-03-20 | 2004-03-19 | 制御された雰囲気を有する電気機械的システム及びこのシステムを製造する方法 |
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JP5889091B2 true JP5889091B2 (ja) | 2016-03-22 |
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JP2012087867A Expired - Lifetime JP5889091B2 (ja) | 2003-03-20 | 2012-04-06 | 制御された雰囲気を有する電気機械的システム及びこのシステムを製造する方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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US7075160B2 (en) | 2003-06-04 | 2006-07-11 | Robert Bosch Gmbh | Microelectromechanical systems and devices having thin film encapsulated mechanical structures |
DE10350038A1 (de) * | 2003-10-27 | 2005-05-25 | Robert Bosch Gmbh | Verfahren zum anodischen Bonden von Wafern und Vorrichtung |
US7625603B2 (en) * | 2003-11-14 | 2009-12-01 | Robert Bosch Gmbh | Crack and residue free conformal deposited silicon oxide with predictable and uniform etching characteristics |
US7553684B2 (en) * | 2004-09-27 | 2009-06-30 | Idc, Llc | Method of fabricating interferometric devices using lift-off processing techniques |
JP2008523466A (ja) | 2004-12-06 | 2008-07-03 | エヌエックスピー ビー ヴィ | マルチセンサアセンブリ |
JP2006231439A (ja) * | 2005-02-23 | 2006-09-07 | Sony Corp | 微小機械素子とその製造方法、半導体装置、ならびに通信装置 |
DE102005060870A1 (de) * | 2005-12-20 | 2007-06-21 | Robert Bosch Gmbh | Verfahren zum Verschließen einer Öffnung |
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-
2003
- 2003-03-20 US US10/392,528 patent/US7514283B2/en active Active
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2004
- 2004-03-18 EP EP04101108A patent/EP1460038A3/en not_active Ceased
- 2004-03-19 JP JP2004081289A patent/JP5021153B2/ja not_active Expired - Lifetime
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2009
- 2009-03-13 US US12/403,468 patent/US8018077B2/en not_active Expired - Lifetime
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2011
- 2011-08-19 US US13/213,709 patent/US9771257B2/en active Active
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Also Published As
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JP5021153B2 (ja) | 2012-09-05 |
US20090309175A1 (en) | 2009-12-17 |
EP1460038A2 (en) | 2004-09-22 |
US8018077B2 (en) | 2011-09-13 |
US9771257B2 (en) | 2017-09-26 |
US20110298065A1 (en) | 2011-12-08 |
JP2004314292A (ja) | 2004-11-11 |
US7514283B2 (en) | 2009-04-07 |
JP2012148402A (ja) | 2012-08-09 |
US20040183214A1 (en) | 2004-09-23 |
EP1460038A3 (en) | 2005-12-14 |
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