JP5880690B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 310
- 238000004519 manufacturing process Methods 0.000 title claims description 65
- 239000000758 substrate Substances 0.000 claims description 183
- 238000000137 annealing Methods 0.000 claims description 144
- 230000001133 acceleration Effects 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 48
- 239000012535 impurity Substances 0.000 claims description 35
- 230000001678 irradiating effect Effects 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 11
- 150000002500 ions Chemical class 0.000 claims description 9
- 230000005684 electric field Effects 0.000 claims description 7
- 230000003213 activating effect Effects 0.000 claims description 6
- 229920006395 saturated elastomer Polymers 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 302
- 230000010355 oscillation Effects 0.000 description 28
- 230000007547 defect Effects 0.000 description 16
- 238000010586 diagram Methods 0.000 description 16
- 239000013078 crystal Substances 0.000 description 12
- 239000000386 donor Substances 0.000 description 12
- 230000007423 decrease Effects 0.000 description 8
- 239000002344 surface layer Substances 0.000 description 8
- 238000009826 distribution Methods 0.000 description 6
- SLXKOJJOQWFEFD-UHFFFAOYSA-N 6-aminohexanoic acid Chemical compound NCCCCCC(O)=O SLXKOJJOQWFEFD-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000000852 hydrogen donor Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Description
まず、実施の形態1にかかる半導体装置の製造方法により作製(製造)される半導体装置の一例としてトレンチゲート型IGBTの構造について説明する。図1は、実施の形態1にかかる半導体装置の製造方法により製造される半導体装置の一例を示す断面図である。図1の紙面左側には、エミッタ電極7とn++エミッタ領域3との境界から半導体基板の深さ方向における不純物濃度分布を示す。図1に示す実施の形態1にかかる半導体装置の製造方法により製造される半導体装置において、n-ドリフト層1となる半導体基板の内部には、おもて面側の表面層にpベース領域2が設けられている。
図13は、実施の形態2にかかる半導体装置の製造方法により製造される半導体装置の一例を示す断面図である。実施の形態2にかかる半導体装置の製造方法が実施の形態1にかかる半導体装置の製造方法と異なる点は、IGBTに代えてダイオードを作製する点である。
次に、半導体層のドーピング濃度について検証した。図14は、周知の広がり抵抗(Spread Resistance)測定法によって測定した、実施例にかかる半導体装置のキャリア濃度分布を示す特性図である。実施の形態1にかかる半導体装置の製造方法に従い、プロトン照射(ステップS5)および第1アニール(ステップS6)を行った試料を用意した(以下、実施例とする)。
次に、本発明にかかる半導体装置の製造方法の複数回のプロトン注入において、1段目のn+フィールドストップ層のプロトンピーク位置の好ましい位置について、実施の形態3として説明する。1段目のn+フィールドストップ層とは、ダイオードの場合はカソード層側、IGBTの場合はコレクタ層側となる基板裏面から、基板の深さ方向で最も深い箇所に位置するn+フィールドストップ層のことである。
本発明にかかる半導体装置の製造方法におけるプロトンの加速エネルギーについて、実施の形態4として説明する。上記のγの範囲を満たすように、空乏層が最初に達するn+フィールドストップ層のピーク位置が基板裏面からの距離Xを有するように当該n+フィールドストップ層を実際にプロトン照射で形成するには、プロトンの加速エネルギーを、以下に示す図18の特性図から決めればよい。図18は、本発明にかかる半導体装置のプロトンの平均飛程とプロトンの加速エネルギーとの関係を示す特性図である。
2 pベース領域
3 n++エミッタ領域
4 トレンチ
5 ゲート絶縁膜
6 ゲート電極
7 エミッタ電極
8 層間絶縁膜
9 p+コレクタ層
10 n+フィールドストップ層
10a〜10c n+層
11 コレクタ電極
Claims (18)
- 第1導電型の半導体基板の裏面から、プロトンを照射する照射工程と、
前記半導体基板の裏面に照射されたプロトンを活性化し、前記半導体基板よりも不純物濃度が高い第1導電型の第1半導体層を形成するアニール工程と、を含み、
前記照射工程の照射条件に応じて、前記照射工程と前記アニール工程とを組にして複数回行うことにより、前記半導体基板の深さ方向に、前記第1半導体層を複数形成し、
前記一組の照射工程とアニール工程において、複数回の照射工程の後に1回のアニールを行うことを特徴とする半導体装置の製造方法。 - 前記照射工程は、前記半導体基板の裏面から前記第1半導体層を形成する領域の深さが深いほど高い加速電圧とし、
前記アニール工程は、前記半導体基板の裏面から前記第1半導体層を形成する領域の深さが深いほど高いアニール温度とし、
前記照射工程および前記アニール工程の組は、前記第1半導体層が前記半導体基板の裏面から最も深い位置となる組から順に行うことを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記照射工程の照射条件に応じて、複数回の前記照射工程と1回の前記アニール工程とを組にして複数回行うことにより、前記半導体基板の深さ方向に、前記第1半導体層を複数形成することを特徴とする請求項1または2に記載の半導体装置の製造方法。
- 前記第1半導体層は、空乏層の広がりを抑制するフィールドストップ層であることを特徴とする請求項1〜3のいずれか一つに記載の半導体装置の製造方法。
- 前記照射工程および前記アニール工程により形成する前記第1半導体層の数は、前記半導体基板の厚さもしくは定格電圧あるいはこれらの両方に基づくことを特徴とする請求項1〜4のいずれか一つに記載の半導体装置の製造方法。
- 前記半導体装置は、絶縁ゲート型バイポーラトランジスタであることを特徴とする請求項1〜5のいずれか一つに記載の半導体装置の製造方法。
- 前記半導体装置は、ダイオードであることを特徴とする請求項1〜5のいずれか一つに記載の半導体装置の製造方法。
- 前記半導体基板からなる第1導電型のドリフト層を備え、
前記半導体基板のおもて面には第2導電型の第2半導体層が形成され、
qを電荷素量、N d を前記ドリフト層の平均濃度、ε S を前記半導体基板の誘電率、V rate を定格電圧、J F を定格電流密度、v sat をキャリアの速度が所定の電界強度で飽和した飽和速度として、距離指標Lが下記式(1)で表され、
前記第2半導体層に最も近い前記第1半導体層のキャリア濃度がピーク濃度となる位置の前記半導体基板の裏面からの深さをXとし、
前記半導体基板の厚さをW 0 としたときに、
X=W 0 −γLであり、γが0.2以上1.5以下となるように前記第2半導体層に最も近い前記第1半導体層のピーク濃度となる位置とすることを特徴とする請求項1〜7のいずれか一つに記載の半導体装置の製造方法。
- 前記γが0.9以上1.4以下であることを特徴とする請求項8に記載の半導体装置の製造方法。
- 前記γが1.0以上1.3以下であることを特徴とする請求項9に記載の半導体装置の製造方法。
- 第1導電型の半導体基板の裏面からプロトンを照射する照射工程と、
前記半導体基板の裏面に照射されたプロトンを活性化し、前記半導体基板よりも不純物濃度が高い第1導電型の第1半導体層を形成するアニール工程と、
を含み、
前記照射工程と前記アニール工程とを組にして複数回行うことにより、前記半導体基板の深さ方向に、前記第1半導体層を複数形成し、
複数回の前記照射工程のうち前記半導体基板の裏面から最も深い位置にプロトンを照射する第1の照射工程の組となる、複数回の前記アニール工程のうちの第1のアニール工程のアニール温度を380℃以上450℃以下とし、
複数回の前記照射工程のうち前記半導体基板の裏面から2番目に深い位置にプロトンを照射する第2の照射工程の組となる、複数回の前記アニール工程のうちの第2のアニール工程のアニール温度を350℃以上420℃以下とし、
複数回の前記照射工程のうち前記半導体基板の裏面から3番目に深い位置にプロトンを照射する第3の照射工程の組となる、複数回の前記アニール工程のうちの第3のアニール工程のアニール温度を340℃以上400℃以下とすることを特徴とする半導体装置の製造方法。 - 前記第1のアニール工程のアニール温度を400℃以上420℃以下とし、
前記第2のアニール工程のアニール温度を370℃以上390℃以下とし、
前記第3のアニール工程のアニール温度を350℃よりも高く370℃以下とすることを特徴とする請求項11に記載の半導体装置の製造方法。 - 前記照射工程において、プロトンの照射により飛程Rpの前記第1半導体層を形成するときのプロトンの加速エネルギーEは、前記飛程Rpの対数log(Rp)をx、前記加速エネルギーEの対数log(E)をyとして、下記式(2)を満たすことを特徴とする請求項1〜7,11,12のいずれか一つに記載の半導体装置の製造方法。
y=−0.0047x 4 +0.0528x 3 −0.2211x 2 +0.9923x+5.0474 ・・・(2) - 前記プロトンの前記半導体基板の裏面からの飛程が15μm以上であることを特徴とする請求項1〜7,11〜13のいずれか一つに記載の半導体装置の製造方法。
- 前記半導体基板を薄板化し、薄板化された前記半導体基板の裏面に、裏面電極とのコンタクトとなる半導体層を形成するための不純物イオンをイオン注入する工程と、前記半導体基板の裏面に裏面電極を形成する工程とを含み、前記不純物イオンを活性化させるためのアニール工程が前記裏面電極を形成する工程後に行われることを特徴とする請求項1〜7,11〜14のいずれか一つに記載の半導体装置の製造方法。
- 複数の前記プロトン照射は、加速エネルギーが高い程、前記プロトンのドーズ量が低いことを特徴とする請求項1〜15のいずれか一つに記載の半導体装置の製造方法。
- 前記アニール工程のアニール温度が、前記プロトンを照射する照射工程によって形成された水素誘起ドナーを消失させない温度であることを特徴とする請求項1〜16のいずれか一つに記載の半導体装置の製造方法。
- 前記アニール工程のアニール時間が、0.5時間から10時間の範囲であることを特徴とする請求項1〜17のいずれか一つに記載の半導体装置の製造方法。
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