JP5871396B2 - ソルダーレジストパターンの形成方法 - Google Patents
ソルダーレジストパターンの形成方法 Download PDFInfo
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- JP5871396B2 JP5871396B2 JP2012536324A JP2012536324A JP5871396B2 JP 5871396 B2 JP5871396 B2 JP 5871396B2 JP 2012536324 A JP2012536324 A JP 2012536324A JP 2012536324 A JP2012536324 A JP 2012536324A JP 5871396 B2 JP5871396 B2 JP 5871396B2
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- Prior art keywords
- solder resist
- resist layer
- aqueous solution
- resist pattern
- thickness
- Prior art date
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- 238000000034 method Methods 0.000 title claims description 176
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- 229910000318 alkali metal phosphate Inorganic materials 0.000 claims description 12
- 239000004115 Sodium Silicate Substances 0.000 claims description 11
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical group [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 11
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- 238000007598 dipping method Methods 0.000 claims description 8
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- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 claims description 6
- 229910000288 alkali metal carbonate Inorganic materials 0.000 claims description 5
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- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 claims description 3
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- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- POWFTOSLLWLEBN-UHFFFAOYSA-N tetrasodium;silicate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-][Si]([O-])([O-])[O-] POWFTOSLLWLEBN-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
- H05K2201/09881—Coating only between conductors, i.e. flush with the conductors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0756—Uses of liquids, e.g. rinsing, coating, dissolving
- H05K2203/0769—Dissolving insulating materials, e.g. coatings, not used for developing resist after exposure
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
- H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
- H05K2203/0793—Aqueous alkaline solution, e.g. for cleaning or etching
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
- Materials For Photolithography (AREA)
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PCT/JP2011/070670 WO2012043201A1 (ja) | 2010-09-28 | 2011-09-05 | ソルダーレジストパターンの形成方法 |
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KR (2) | KR101891949B1 (ko) |
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JP3182371U (ja) | 2012-02-10 | 2013-03-21 | 三菱製紙株式会社 | レジスト層の薄膜化処理装置 |
JP3186533U (ja) | 2012-09-25 | 2013-10-10 | 三菱製紙株式会社 | レジスト層の薄膜化装置 |
JP2014089996A (ja) * | 2012-10-29 | 2014-05-15 | Ngk Spark Plug Co Ltd | 配線基板 |
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JP2014187352A (ja) | 2013-02-22 | 2014-10-02 | Mitsubishi Paper Mills Ltd | レジスト層の薄膜化装置 |
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CN107969077B (zh) * | 2013-05-22 | 2020-02-18 | 三菱制纸株式会社 | 布线基板的制造方法 |
WO2014199890A1 (ja) * | 2013-06-14 | 2014-12-18 | 三菱製紙株式会社 | 配線基板の製造方法 |
KR20150084206A (ko) * | 2014-01-13 | 2015-07-22 | 삼성전기주식회사 | 패키지용 기판 제조방법 |
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CN114245575A (zh) * | 2021-11-16 | 2022-03-25 | 龙南骏亚电子科技有限公司 | 一种pcb阻焊锯齿形电路板的设计方法 |
CN114885510B (zh) * | 2022-04-18 | 2023-07-04 | 安捷利美维电子(厦门)有限责任公司 | 一种减少铜面油墨黑点污染的方法 |
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JP6124372B2 (ja) | 2017-05-10 |
KR20180075697A (ko) | 2018-07-04 |
JPWO2012043201A1 (ja) | 2014-02-06 |
KR20130099093A (ko) | 2013-09-05 |
KR101891949B1 (ko) | 2018-08-27 |
CN103109588B (zh) | 2016-09-07 |
JP2016048786A (ja) | 2016-04-07 |
KR101891840B1 (ko) | 2018-08-24 |
CN103109588A (zh) | 2013-05-15 |
WO2012043201A1 (ja) | 2012-04-05 |
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