WO2012043201A1 - ソルダーレジストパターンの形成方法 - Google Patents
ソルダーレジストパターンの形成方法 Download PDFInfo
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- WO2012043201A1 WO2012043201A1 PCT/JP2011/070670 JP2011070670W WO2012043201A1 WO 2012043201 A1 WO2012043201 A1 WO 2012043201A1 JP 2011070670 W JP2011070670 W JP 2011070670W WO 2012043201 A1 WO2012043201 A1 WO 2012043201A1
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- solder resist
- resist layer
- aqueous solution
- thickness
- forming
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
- H05K2201/09881—Coating only between conductors, i.e. flush with the conductors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0756—Uses of liquids, e.g. rinsing, coating, dissolving
- H05K2203/0769—Dissolving insulating materials, e.g. coatings, not used for developing resist after exposure
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
- H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
- H05K2203/0793—Aqueous alkaline solution, e.g. for cleaning or etching
Definitions
- This relates to a method for forming a solder resist pattern.
- solder resist pattern on the circuit boards inside various electrical devices is coated on the entire surface other than the part to be soldered to prevent solder from adhering to the wiring pattern that does not require soldering. It plays the role of electrical insulation and protection from the external environment.
- flip chip connection In a semiconductor package in which an electronic component such as a semiconductor chip is mounted on a circuit board, mounting by flip chip connection is an effective means for realizing high speed and high density.
- flip chip connection a part of the conductor wiring of the circuit board is used as a connection pad for flip chip connection, and, for example, solder bumps arranged on the connection pad and electrode terminals of the semiconductor chip are joined.
- FIG. 1 is a schematic cross-sectional structure diagram of a Solder Mask Defined (SMD) structure, which is characterized in that the opening of the solder resist layer 3 is smaller than the connection pad 6.
- SMD Solder Mask Defined
- NSD Non Solder Mask Defined
- a photolithography method As a method for forming a solder resist pattern, a photolithography method is generally known. In the photolithography method, after forming the solder resist layer 3 on the circuit board having the connection pads 6 and the conductor wirings 2 on the insulating substrate 1, the solder resist layer 3 around the connection pads 6 is formed by exposure and development. Completely removed to provide an opening. In this photolithography method, only the structures shown in FIGS. 1, 2 and 3 can be produced so far.
- solder resist pattern having slit-like openings is formed by wet blasting, and a plurality of connection pads 6 arranged side by side are exposed and adjacent to each other exposed in the slit-like openings.
- the solder resist layer 3 having the same height as the connection pads 6 is filled between the connection pads 6.
- connection pad is exposed to the circuit board having the connection pad and the conductor wiring having a height lower than that of the connection pad, and the conductor wiring is covered with the solder resist layer.
- a structure filled with a solder resist layer is also disclosed (for example, see Patent Document 2). This structure is formed by applying a solder resist layer on a circuit board having a connection pad and a conductor wiring having a height lower than that of the connection pad, and then polishing until the upper surface of the connection pad is exposed.
- a polishing method a mechanical polishing method or a laser scribing method can be adopted.
- solder resist layer 3 exists between the connection pads 6, but the outer peripheral surface of the connection pad 6 is exposed.
- the entire connection pad 6 is electroless nickel-plated and coated with a nickel layer, and a solder resist layer 3 is applied on the conductor wiring, followed by UV curing and heat curing. Is formed by exposing the upper surface of the nickel layer and then removing the nickel layer by etching (see, for example, Patent Document 3).
- a polishing method such as wet blasting or mechanical polishing is used to form the opening of the solder resist layer.
- the in-plane polishing amount is made uniform.
- it is extremely difficult to perform highly accurate processing that does not leave a residue of the solder resist layer on the connection pad and completely exposes the upper surface thereof.
- An object of the present invention is to provide a method for forming a solder resist pattern in which there is no electrical short circuit due to solder between adjacent connection pads for semiconductor connection, and no solder resist residue is left on the connection pads.
- solder resist pattern forming method characterized by including these in this order.
- solder resist pattern according to any one of (1) to (4), wherein the aqueous alkali solution is an aqueous solution containing an inorganic alkaline compound, and the content of the inorganic alkaline compound is 3 to 25% by mass.
- Forming method (6) Formation of solder resist pattern according to (5), wherein the inorganic alkaline compound is at least one selected from alkali metal carbonates, alkali metal phosphates, alkali metal hydroxides, and alkali metal silicates.
- Method (7) The method for forming a solder resist pattern according to (5), wherein the inorganic alkaline compound is an alkali metal silicate.
- solder resist pattern there is no electrical short-circuit due to solder between adjacent connection pads for semiconductor connection, and solder resist residue on the connection pads The effect of not leaving can be achieved.
- FIG. 6 is a cross-sectional process diagram illustrating an example of a solder resist pattern forming method (1) according to the present invention.
- a circuit board having connection pads 6 formed on an insulating substrate 1 is prepared.
- a subtractive method, a semi-additive method, an additive method, or the like may be used.
- the solder resist layer 3 is formed so as to cover the entire surface of the substrate.
- the solder resist layer 3 is thinned with an alkaline aqueous solution.
- the thickness of the soldering resist layer 3 in this invention is the value which measured the thickness to the soldering resist layer surface from the surface of the insulating substrate 1 as a base point.
- FIG. 7 is a sectional process diagram showing an example of the solder resist pattern forming method (2) of the present invention.
- a circuit board in which connection pads 6 and conductor wirings 2 are formed on an insulating substrate 1 is prepared.
- the solder resist layer 3 is formed so as to cover the entire surface of the substrate.
- the step (C) a portion other than the region to be thinned is exposed with the actinic ray 5 until the thickness of the solder resist layer becomes equal to or less than the thickness of the connection pad. Although exposure is performed through the photomask 4 in FIG. 7, it may be performed by a direct drawing method.
- the solder resist layer 3 in the non-exposed part is thinned with an alkaline aqueous solution.
- FIG. 11 is a three-dimensional explanatory view showing an outline of the vicinity of the connection pad of the circuit board produced by the solder resist pattern forming method (2) of the present invention, in which the connection pad 6 is exposed from the solder resist layer 3. A resist pattern is formed.
- FIG. 8 is a sectional process diagram showing an example of a solder resist pattern forming method (3) according to the present invention.
- a circuit board in which connection pads 6 and conductor wirings 2 are formed on an insulating substrate 1 is prepared.
- the solder resist layer 3 is formed so as to cover the entire surface of the substrate.
- the solder resist layer 3 is thinned to a desired thickness within a range thicker than the thickness of the connection pad 6 with an alkaline aqueous solution. Since exposure is performed after the solder resist layer 3 is thinned to a desired thickness, light scattering during exposure is reduced, and higher-definition patterning becomes possible.
- FIG. 12 is a three-dimensional explanatory view schematically showing the vicinity of the connection pad of the circuit board produced by the solder resist pattern forming method (3) of the present invention.
- the conductor wiring 2 is covered with the solder resist layer 3, and the connection pad is shown.
- a solder resist pattern having a shape 6 exposed from the solder resist layer 3 is formed.
- FIG. 9 is a cross-sectional process diagram illustrating an example of a solder resist pattern forming method (4) according to the present invention.
- a circuit board is prepared in which a connection pad 6 and a conductor wiring 2 having a height lower than that of the connection pad 6 are formed on the insulating substrate 1.
- the solder resist layer 3 is formed so as to cover the entire surface of the substrate.
- the solder resist layer 3 is thinned with an alkaline aqueous solution until the thickness of the solder resist layer 3 is equal to or less than the thickness of the connection pad 6 and larger than the thickness of the conductor wiring 2.
- FIG. 13 and 14 are three-dimensional explanatory views schematically showing the vicinity of the connection pad of the circuit board manufactured by the solder resist pattern forming method (4) of the present invention.
- the conductor wiring 2 having a height lower than that of the connection pad 6 is shown in FIG.
- a solder resist pattern having a shape covered with the solder resist layer 3 and having the connection pads 6 exposed from the solder resist layer 3 is formed.
- the circuit board having connection pads in the present invention is a circuit board in which connection pads for connecting electronic components such as semiconductor chips made of metal such as copper are formed on an insulating substrate.
- the circuit board having connection pads and conductor wiring on the substrate in the present invention is a circuit in which connection pads and conductor wiring for connecting electronic components such as semiconductor chips made of metal such as copper are formed on an insulating substrate. It is a substrate. Examples of a method for manufacturing a substrate in which connection pads and conductor wirings are formed on the substrate include a subtractive method, a semi-additive method, and an additive method.
- a through-hole called a through-hole is formed in a copper-clad laminate obtained by bonding a copper foil to a glass base epoxy resin, and plated copper is deposited on the surface including the inner wall of the through-hole by electrolytic copper plating. .
- an etching resist layer is formed in the circuit portion, and the copper in the non-circuit portion is removed by an etching process. Thereafter, the etching resist layer in the circuit portion is removed to produce a circuit board.
- a through hole is formed in a copper clad laminate in which an extremely thin copper foil is bonded to a glass base epoxy resin, and an electroless copper plating layer is provided on the surface including the inner wall of the through hole.
- a plating resist layer is formed on the non-circuit portion, and an electrolytic copper plating layer is formed on the surface of the portion where the electroless copper plating layer is exposed by electrolytic copper plating treatment.
- the plating resist layer in the non-circuit portion is removed, and the electroless copper plating layer under the plating resist layer is removed by flash etching to produce a circuit board.
- a circuit board having a connection pad and a conductor wiring having a height lower than the connection pad on the substrate is a connection pad for connecting an electronic component such as a semiconductor chip made of a metal such as copper on the insulating substrate.
- a circuit board on which a conductor wiring having a height lower than that of the connection pad is formed. Examples of a method for manufacturing a substrate having a connection pad and a conductor wiring having a height lower than the connection pad on the substrate include a semi-additive method and an additive method.
- a through-hole called a through-hole is formed in a copper-clad laminate obtained by bonding a copper foil to a glass base epoxy resin, and an electroless copper plating layer is provided on the surface including the inner wall of the through-hole.
- a plating resist layer is formed on the non-circuit portion, and an electrolytic copper plating layer (connection pad precursor and conductor wiring) is formed on the surface of the portion where the electroless copper plating layer is exposed by electrolytic copper plating.
- a plating resist layer is formed again so that the connection pad precursor portion is exposed, and an electrolytic copper plating layer is formed on the surface of the connection pad precursor portion exposed by the electrolytic copper plating treatment. Thereafter, the plating resist layer is removed, and the electroless copper plating layer below the plating resist layer is removed by flash etching to produce a circuit board.
- the circuit board may be any one of a single-sided board, a double-sided board, and a multilayer board, and the solder resist pattern forming method of the present invention can be applied to any circuit board as long as it is necessary to form a solder resist pattern. Can be applied.
- any solder resist can be used as long as it can dissolve or swell the surface of the solder resist layer with an alkaline aqueous solution and remove the solder resist layer. Further, it may be either a one-component or two-component liquid resist, or a dry film resist.
- the solder resist contains, for example, an alkali-soluble resin, a polyfunctional acrylic monomer, a photopolymerization initiator, an epoxy resin, an inorganic filler, and the like.
- alkali-soluble resin include alkali-soluble resins having both photo-curing properties and thermosetting properties.
- a secondary hydroxyl group of a resin obtained by adding an acrylic acid to a novolac-type epoxy resin to form an epoxy acrylate may be mentioned.
- a resin to which an acid anhydride has been added may be mentioned.
- the polyfunctional acrylic monomer include trimethylolpropane triacrylate, dipentaerythritol hexaacrylate, pentaerythritol triacrylate, and the like.
- the photopolymerization initiator include 2-methyl-1- (4-methylthiophenyl) -2-morpholinopropan-1-one.
- Epoxy resin is used as a curing agent.
- the development type solder resist often takes a two-component form to be mixed before use.
- the inorganic filler include talc, silica, barium sulfate, titanium oxide, and zinc oxide.
- step (A1) a solder resist layer is formed on the surface of the circuit board having connection pads.
- step (A2) a solder resist layer is formed on the surface of the circuit board having the connection pads and the conductor wiring.
- step (A3) a solder resist layer is formed on the surface of the circuit board having a connection pad and a conductor wiring having a height lower than that of the connection pad.
- the solder resist layer for example, if it is a liquid resist, screen printing method, roll coating method, spray method, dipping method, curtain coating method, bar coating method, air knife method, hot melt method, gravure coating method, brush A coating method or an offset printing method can be used. Moreover, if it is a dry film shape, the laminating method and the vacuum laminating method are used.
- a portion of the solder resist layer other than the region to be thinned is selectively irradiated with actinic rays and cured.
- Exposure methods include xenon lamps, high-pressure mercury lamps, low-pressure mercury lamps, ultra-high-pressure mercury lamps, reflection image exposure systems using UV fluorescent lamps as light sources, single-sided or double-sided contact exposure systems using photomasks, proximity systems, projection systems, and lasers. Examples include a scanning exposure method.
- the “region to be thinned” is, for example, a region around the connection pad including on the connection pad and between the connection pads.
- the “region other than the region to be thinned” is, for example, a region around the conductor wiring including the conductor wiring and between the conductor wirings.
- the solder resist layer is thinned with an alkaline aqueous solution until the thickness of the connection pad is reduced.
- the solder resist layer is thinned with an alkaline aqueous solution within a range thicker than the thickness of the connection pad 6. Specifically, the surface of the solder resist layer is dissolved or swollen with an alkaline aqueous solution, and the surface of the solder resist layer in the non-exposed area is removed.
- the thickness of the solder resist layer around the connection pad is determined by the thickness after the solder resist layer is formed and the amount of the solder resist layer in the non-exposed area formed into a thin film by the alkaline aqueous solution treatment. Is done. Further, in the method for forming a solder resist pattern of the present invention, the amount of thinning can be appropriately adjusted within the range of 0.01 to 500 ⁇ m. The height from the surface of the solder resist layer after the thinning to the surface of the connection pad is appropriately adjusted according to the necessary amount of solder later.
- the thinning process is performed until the thickness of the solder resist layer after the thinning process is the same as or thinner than the thickness of the connection pad. If the solder resist layer is too thin, the electrical insulation between the connection pads will be insufficient, causing a short circuit between the electroless nickel / gold plating and a short circuit due to the solder between the connection pads. . Therefore, the thickness of the solder resist layer after thinning is preferably at least one-half of the thickness of the connection pad, more preferably at least three-half.
- a water washing treatment may be performed as a pretreatment.
- Pretreatment rinsing reorients hydrophilic groups such as carboxyl groups in the solder resist layer, making the layer surface hydrophilic. Further, contaminants and foreign matters existing on the solder resist layer can be removed.
- water used for the pretreatment washing include industrial water, tap water, ion exchange water, and distilled water.
- Examples of the pretreatment water washing method include immersion treatment, paddle treatment, spray treatment, brushing, scraping and the like, and spray treatment is preferred in consideration of the removal of contaminants and foreign matters on the solder resist layer.
- the spray conditions (temperature, spray pressure, time) can be adjusted as appropriate. Specifically, the temperature is preferably 15 to 30 ° C, more preferably 20 to 25 ° C.
- the spray pressure is preferably 0.02 to 0.5 MPa, more preferably 0.05 to 0.3 MPa.
- a surfactant may be contained in the pretreated washing water.
- surfactants include alkyl sulfate salts, polyoxyethylene alkyl ether sulfate salts, alkylbenzene sulfonate salts, fatty acid salts and other anionic surfactants; polyoxyethylene alkyl ethers, polyoxyalkylene derivatives, sorbitan fatty acid esters, Polyoxyethylene sorbitan fatty acid ester, polyoxyethylene sorbitol fatty acid ester, glycerin fatty acid ester, polyoxyethylene fatty acid ester, polyoxyethylene hydrogenated castor oil, polyoxyethylene alkylamine, alkylalkanolamide, polyoxyethylene alkylphenyl ether, polyoxy Ethylene-polyoxypropylene block copolymer (so-called pluronic surfactant), fatty acid pentaerythr
- any type of surfactant can be used, but anionic, cationic and amphoteric surfactants are specific to the resist surface. It is preferable to use a nonionic surfactant because it may partially invade the resist surface depending on the type of the surfactant. More preferred specific examples of the nonionic surfactant include acetylene glycol, Surfynol (registered trademark) 465, Surfynol (registered trademark) 485, Surfynol (registered trademark) manufactured by Nissin Chemical Industry Co., Ltd. ) 82 or the like.
- the amount of surfactant to be added to the pretreatment rinse water varies depending on the properties of various surfactants, but in addition to the hydrophilicity of the solder resist layer surface, there is little foaming during the pretreatment rinse, and further due to the surfactant.
- the range of 0.001 to 0.1% by mass is preferable, the range of 0.001 to 0.05% by mass is more preferable, and 0.01
- the range of ⁇ 0.05 mass% is more preferable.
- An aqueous alkali solution according to the present invention is an aqueous solution of an inorganic alkaline compound such as an alkali metal silicate, alkali metal hydroxide, alkali metal phosphate, alkali metal carbonate, ammonium phosphate, ammonium carbonate; monoethanolamine , Diethanolamine, triethanolamine, methylamine, dimethylamine, ethylamine, diethylamine, triethylamine, cyclohexylamine, tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide, trimethyl-2-hydroxyethylammonium hydroxide (choline), etc.
- an inorganic alkaline compound such as an alkali metal silicate, alkali metal hydroxide, alkali metal phosphate, alkali metal carbonate, ammonium phosphate, ammonium carbonate
- monoethanolamine Diethanolamine, triethanolamine, methylamine, dimethylamine,
- An aqueous solution of an organic alkaline compound can be mentioned.
- the alkali metal include lithium, sodium, and potassium.
- the inorganic alkaline compound and organic alkaline compound may be used alone or in combination. Inorganic alkaline compounds and organic alkaline compounds may be used in combination.
- a sodium salt as an alkali metal of an inorganic alkaline compound
- the carbonate ion or silicate ion in the component may form an insoluble salt with calcium or magnesium contained in water, and may be agglomerated and separated in an alkaline aqueous solution.
- Potassium is more soluble in water than sodium and highly reactive with other compounds, so it reacts preferentially with potassium rather than carbonate and silicate ions react with calcium and magnesium. It is believed that the formation of insoluble salts is impeded.
- sulfates and sulfites can be added to the alkaline aqueous solution.
- the sulfate or sulfite include alkali metal sulfates or sulfites such as lithium, sodium or potassium, and alkaline earth metal sulfates or sulfites such as magnesium and calcium.
- the aqueous alkaline solution is an aqueous solution containing an inorganic alkaline compound
- the inorganic alkaline compound is at least one selected from alkali metal carbonates, alkali metal phosphates, alkali metal hydroxides, and alkali metal silicates. Preferably it is a seed.
- the content of the inorganic alkaline compound is preferably 3 to 25% by mass.
- Alkaline aqueous solution with an inorganic alkaline compound content of less than 3% by mass is a solution used for development after exposure by a conventional photolithography method, and is effective for completely removing the unexposed solder resist layer.
- the content of the inorganic alkaline compound is more preferably 5 to 20% by mass, and further preferably 7 to 15% by mass. Further, a surfactant, an antifoaming agent, a solvent and the like can be added as appropriate.
- the presence of an inorganic filler insoluble in the alkaline aqueous solution contained in the solder resist layer cannot be ignored.
- the size of the inorganic filler depends on the type, it has a particle size distribution ranging from submicron order called nanofiller to several tens of microns, with a content of 30 to 70% by mass in the layer.
- the thinning process proceeds by dissolving and diffusing after the alkaline compound penetrates into the solder resist layer, but the presence of the insoluble inorganic filler suppresses the penetration of the alkaline compound and may slow down the thinning rate. .
- the pH of the alkaline aqueous solution is preferably 12.5 or more, and more preferably 13.0 or more.
- the higher the pH of the alkaline aqueous solution the greater the swelling of the solder resist layer when the alkaline compound penetrates, and the less the influence of the penetration inhibition by the inorganic filler.
- the surface of the connection pad is exposed by a thinning process.
- the surface of the connection pad is roughened by various polishing processes in consideration of the adhesion between the conductor wiring and the solder resist layer. .
- the anchor effect by the roughening improves the adhesion between the conductor wiring and the solder resist layer, and maintains high insulation reliability over a long period of time.
- solder resist layer when removing the solder resist layer to expose the connection pad surface, it is common to use a low-concentration sodium carbonate aqueous solution with excellent dispersion capability as a developer, and the solder pad residue remains on the connection pad surface. Hardly occurs.
- a thinning process is performed using a low-concentration sodium carbonate aqueous solution, the surface of the solder resist layer cannot be uniformly treated, and in-plane unevenness occurs.
- an alkaline aqueous solution containing an alkali metal silicate can be cited as an alkaline aqueous solution that does not leave a solder resist residue on the surface of the roughened connection pad while making the film uniformly in-plane.
- Alkali metal silicates are superior to other inorganic alkaline compounds in the ability to dissolve and diffuse the solder resist layer, and residue residues are unlikely to occur on the surface of the connection pads.
- the general formula of the alkali metal silicate is shown in the following formula (i).
- Alkali metal silicate is a general term for chemicals that are formed by continuously changing the three components at various ratios.
- a sodium salt one having a mass ratio of 0.5 is sodium orthosilicate, one having a mass ratio of 1.0 is sodium metasilicate, and one having a mass ratio of 1.3 to 4 is generally sodium silicate.
- Those having a mass ratio of 1 or less are called crystalline sodium silicate, and those having a mass ratio of more than 1 are non-crystalline, and the mass ratio can be continuously changed.
- the viscosity of the sodium silicate solution varies significantly depending on the mass ratio, concentration, temperature, and the like.
- the sodium silicate solution contains silicate ion monomers, polysilicate ions, colloidal silicate ion micelles, and the like, and takes various forms depending on mass ratio and concentration.
- silicate ion monomers are mainly present, and when the mass ratio is high, dimer and polysilicate ion micelles are included in addition to the silicate ion monomers.
- the concentration of acid ion micelles increases.
- the increase in the polysilicate ion micelle increases the mass average molecular weight of the solution and increases the viscosity.
- sodium metasilicate is most preferably used from the viewpoint of the stability of the aqueous solution and workability.
- potassium salts are more soluble in water than sodium salts, various solutions can be used without the aqueous solution easily coagulating and separating.
- the content of the alkali metal silicate is more preferably 5 to 25% by mass, and further preferably 7 to 20% by mass.
- Examples of the inorganic alkaline compound having the ability to dissolve and diffuse the solder resist layer after the alkali metal silicate include an aqueous alkali solution containing an alkali metal phosphate.
- an alkali metal phosphate strongly alkaline trisodium phosphate or tripotassium phosphate in which three atoms of alkali metal are coordinated is preferably used.
- the content of the alkali metal phosphate is more preferably 5 to 20% by mass, and further preferably 7 to 15% by mass.
- an aqueous solution containing potassium carbonate as an inorganic alkaline compound can moderately dissolve and diffuse the solder resist layer.
- Carbonate has higher hydration power than silicates and phosphates, but as an alkali metal, potassium has a greater tendency to ionize in aqueous solution than sodium and is advantageous for dissolution and diffusion of the solder resist layer.
- the content of potassium carbonate is more preferably 3 to 15% by mass, further preferably 5 to 10% by mass.
- the organic alkaline compound contained in the alkaline aqueous solution is selected from tetramethylammonium hydroxide (TMAH) and trimethyl-2-hydroxyethylammonium hydroxide (choline). It is preferable that at least any one of these is included. Further, an alkaline aqueous solution having an organic alkaline compound content of 5 to 25% by mass can be suitably used. If it is less than 5% by mass, in-plane unevenness may easily occur in the thinning process. On the other hand, if it exceeds 25 mass%, the thinning rate may be slow.
- TMAH tetramethylammonium hydroxide
- choline trimethyl-2-hydroxyethylammonium hydroxide
- the content of the organic alkaline compound is more preferably 7 to 20% by mass, and further preferably 10 to 20% by mass. Further, a surfactant, an antifoaming agent, a solvent and the like can be added as appropriate.
- a surfactant, an antifoaming agent, a solvent and the like can be added as appropriate.
- alkali metal ions may be taken into the solder resist layer and the insulation reliability may be reduced. In the case of using an alkaline aqueous solution containing bismuth, an effect of suppressing a decrease in insulation reliability can be obtained.
- the temperature of the alkaline aqueous solution is preferably 15 to 35 ° C, more preferably 20 to 30 ° C. If the temperature is too low, the penetration rate of the alkaline compound into the solder resist layer may be slow, and it takes a long time to reduce the desired thickness. On the other hand, if the temperature is too high, the dispersion of the alkaline compound proceeds simultaneously with the penetration of the alkaline compound into the solder resist layer.
- a neutralization titration method is preferably used as a liquid management method for the alkaline aqueous solution.
- concentration an index of liquid management.
- management by pH is also conceivable, but the pH is actually adjusted by contact and reaction between an alkali-soluble resin having an acid group terminal such as a carboxylic acid group contained in the solder resist layer and a high concentration aqueous alkali solution. Therefore, it is difficult to strictly manage the liquid at pH.
- concentration management by the neutralization titration method it is preferable to replenish an alkaline aqueous solution having the same concentration as the initial concentration as a replenisher.
- concentration management by the neutralization titration method it is preferable to replenish an alkaline aqueous solution having the same concentration as the initial concentration as a replenisher.
- the development processing is performed in a time about 1.5 to 2.0 times longer than the time during which all the solder resist layer is eluted.
- replenishing a high-concentration alkaline aqueous solution it is common to perform operations such as mechanical stirring so that the liquid concentration in the tank instantaneously becomes a target concentration. From this point, it is preferable to replenish an alkaline aqueous solution having the same concentration as the initial concentration.
- a predetermined amount of alkaline aqueous solution is collected from a continuously operating thinning apparatus, hydrochloric acid or sulfuric acid is dropped while measuring pH, and a neutralization point is obtained.
- the concentration of the alkaline compound is determined from the amount of acid added to reach the value.
- the concentration of the alkaline compound is calculated from the obtained titration curve.
- the titration curve shifts due to the influence of acid groups contained in the solder resist layer, so that the exact concentration may not be estimated. Therefore, it is necessary to calculate the concentration in the alkaline region.
- the “predetermined range” refers to a concentration range of ⁇ 5% to + 5% with respect to the initial concentration, and is hereinafter also referred to as “target concentration”.
- From neutralization titration to addition and replenishment of alkaline aqueous solution can be performed automatically.
- a function for example, a function (sample pump, metering tube, etc.) for sampling while measuring an alkaline aqueous solution at least automatically every predetermined time, a pH meter, a function for stirring a liquid (magnetic stirrer, etc.), a titrant, etc.
- a function of dropping (acidic liquid) (pulse motor driven pump, etc.), an estimated neutralization point pH, a function of stopping dropping of the titrant when the pH is reached, a function of calculating the amount of titrant dropped, A function for calculating the concentration of the alkaline compound from the dripping amount, a function for setting the target concentration, and an alkali having the same concentration as the initial concentration calculated by [(target concentration ⁇ measured concentration) ⁇ alkaline aqueous solution tank volume / target concentration].
- Examples include a system including a function of supplying an aqueous solution (such as a metering pump) and a function of washing a titration container after completion of a series of titration measurements.
- the calculation formula for replenishing the liquid is based on the above, but it is preferable to make various corrections while observing the actual process.
- the estimated neutralization point pH was set, and the concentration of the alkaline compound was calculated from the amount of acid dropped until reaching that pH.
- the titration end pH was set as the neutralization point. Set the pH past the pH (about 7 to 6 if the neutralization point is pH 8), determine the amount of acid dripping that gives the highest rate of pH change from the start of acid dripping to the end of dripping. It is preferable to calculate the concentration of the alkaline compound from the amount of acid dropped so far as the sum point.
- thinning treatment with an alkaline aqueous solution methods such as immersion treatment, paddle treatment, spray treatment, brushing, and scraping can be used, but immersion treatment is preferred.
- immersion treatment is preferred.
- bubbles are likely to be generated in the alkaline aqueous solution, and the generated bubbles may adhere to the surface of the solder resist layer during the thinning treatment, resulting in non-uniform film thickness.
- spraying or the like it is preferable to make the spray pressure as small as possible so that bubbles are not generated.
- the circuit board cleaning with water completely dissolves and removes the solder resist layer to be removed.
- the temperature of the washing water is more preferably 25 to 45 ° C, and further preferably 27 to 40 ° C.
- an alkaline compound is contained. It is preferable to include a step of treating with an aqueous solution having a content of the alkaline compound less than that of the alkaline aqueous solution and having a pH of 5.0 to 10.0 and a temperature of 22 to 50 ° C. Step (E) is performed before washing with water.
- the aqueous solution containing the alkaline compound since the aqueous solution containing the alkaline compound has an excellent buffering capacity in the alkaline region, it is possible to prevent an abrupt increase in pH, which is useful for maintaining excellent in-plane uniformity.
- the dissolution diffusibility of the solder resist layer can be kept constant, and a stable continuous thinning process can be performed. Furthermore, by setting the temperature of the aqueous solution to 22 to 50 ° C., it is possible to obtain an effect that treatment can be performed without leaving a solder resist residue on the roughened connection pad surface.
- alkaline compound in the aqueous solution of step (E) examples include inorganic alkaline compounds such as alkali metal carbonates, alkali metal phosphates, alkali metal hydroxides, and alkali metal silicates, tetramethylammonium hydroxide (TMAH), trimethyl And organic alkaline compounds such as 2-hydroxyethylammonium hydroxide (choline).
- inorganic alkaline compounds such as alkali metal carbonates, alkali metal phosphates, alkali metal hydroxides, and alkali metal silicates, tetramethylammonium hydroxide (TMAH), trimethyl
- TMAH tetramethylammonium hydroxide
- choline 2-hydroxyethylammonium hydroxide
- the alkaline compound in the alkaline aqueous solution used in the step (B1), (B2), (B3) or (D) performed before the step (E) and the alkaline compound used in the step (E) are: Although it may be the same or different, usually two steps are performed continuously, and it is considered that an alkaline compound is mixed during the transition from the previous step to the subsequent step. In general, the same alkaline compound is included.
- the content of the alkaline compound in the aqueous solution in the step (E) is smaller than the content in the alkaline aqueous solution used in the step (B1), (B2), (B3) or (D). That is, an aqueous solution that is diluted with the alkaline aqueous solution used in the step (B1), (B2), (B3), or (D) is used in the step (E).
- the aqueous solution in step (E) is thicker than the alkaline aqueous solution used in step (B1), (B2), (B3) or (D), it is difficult to control the amount of solder resist layer to be thinned Occurs.
- the pH of the aqueous solution in step (E) is less than 5.0, the solder resist components dissolved in the aqueous solution may aggregate and become insoluble sludge and adhere to the surface of the solder resist layer after thinning.
- the pH of the aqueous solution in step (E) exceeds 10.0, dissolution and diffusion of the solder resist layer is promoted, and uneven film thickness may easily occur in the surface.
- the pH of the aqueous solution can be adjusted using sulfuric acid, phosphoric acid, hydrochloric acid or the like.
- the pH of the aqueous alkali solution and the aqueous solution in step (E) is temperature-dependent, but the pH according to the present invention indicates a value at a liquid temperature of 22 ° C.
- the pH value of the aqueous solution at 22 ° C. can be examined.
- the temperature of the aqueous solution is more preferably 25 to 45 ° C, and further preferably 27 to 40 ° C.
- the temperature of the aqueous solution in the step (E) affects the dissolution / diffusion efficiency of the solder resist layer. If the temperature is lower than 22 ° C., poor dissolution of the solder resist layer component occurs, and the solder resist residue tends to remain on the roughened connection pad surface. There is a case. On the other hand, when the temperature exceeds 50 ° C., problems such as evaporation of the aqueous solution, temperature management in continuous operation, and restrictions on the device design may occur, which is not preferable.
- an antifoaming agent effective for antifoaming can be added to the aqueous solution in step (E).
- an antifoaming agent effective for antifoaming (foam suppression and foam breaking) can be added to the aqueous solution in step (E).
- the antifoaming agent suppresses such foaming, but is roughly classified into a silicone type antifoaming agent and an organic type antifoaming agent.
- Silicone-based antifoaming agents are excellent in defoaming fast-acting properties, but are inferior in terms of sustainability, compatibility and wettability of defoaming ability, and easily cause defects such as repellency and craters.
- organic antifoaming agents include surfactants, paraffins, mineral oils, etc., but exhibit superior durability in defoaming aqueous foams compared to silicone antifoaming agents.
- an emulsion-dispersed surfactant having a low HLB using an emulsifier is often used. This type of antifoaming agent is relatively durable, Many of the effects are small compared to others.
- the surfactant represented by the following formula 1 or 2 having an acetylene group at the center and a symmetrical and very stable molecular structure has a small molecular weight and an effect of greatly reducing the surface tension. In addition to work such as foaming and dispersibility, it exhibits excellent performance in wettability and compatibility.
- n and n are 0 or an integer of 1 or more and 0 ⁇ m + n ⁇ 30.
- surfactants examples include Surfinol (registered trademark) 104, Surfinol (registered trademark) DF110D, Surfinol (registered trademark) MD-20, Surfinol (registered trademark) manufactured by Nissin Chemical Industry Co., Ltd. 420, Surfinol (registered trademark) 440, Surfinol (registered trademark) 465, Surfinol (registered trademark) 485, Olphine (registered trademark) AF-103, Orphin (registered trademark) E1004, and the like.
- Surfynol (registered trademark) 104 and Olphine (registered trademark) AF-103 are preferable from the viewpoint of defoaming properties
- Surfhinol (registered trademark) 465 and Surfynol (registered trademark) are preferable from the viewpoint of water solubility.
- 485, Olphine (registered trademark) E1004 and the like are preferable, but in addition to these, considering the compatibility, the durability of the defoaming effect, and the dispersibility of the oily scum accompanying the increase in the amount of penetration, Surfynol (registered trademark) MD- The use of 20 is most preferred.
- surfactants are preferably added in an amount of 0.01 to 5.0 g, more preferably 0.05 to 2.0 g, per 1 g of the solder resist to be dissolved and dispersed. If it is less than 0.01g, the defoaming effect with respect to foaming may become inadequate. If it exceeds 5.0 g, layer separation of the surfactant may occur. Further, when the surfactant is added in a state dispersed in an aqueous solution, it quickly diffuses and exhibits an antifoaming effect.
- the paraffin-based antifoaming agent is an emulsion-dispersed paraffin wax or a modified product thereof using an emulsifier, and is preferably an antifoaming agent containing mineral oil as a component.
- mineral oil used include mainly paraffinic and naphthenic saturated hydrocarbons obtained from petroleum crude oil or processed products thereof, such as liquid paraffin, lubricating oil, gasoline, kerosene, light oil, heavy oil, and machine oil.
- Mineral oil-based antifoaming agents contain mineral oil as the main antifoaming component, and some of them contain metal soap, silicon dioxide, etc.
- Antifoaming agents with mineral oil as the main antifoaming component have extremely poor dispersibility in water, and the oil separated on the water surface floats, or the separated oil adheres to the surface of the solder resist layer. There is a problem of significantly contaminating the bathtub.
- the antifoaming agent containing mineral oil should have a mineral oil content of 20% by mass or less. Although mineral oil generally has a large foam suppression effect, it is said that there is no persistence. However, by containing mineral oil at 20% by mass or less and supplementing the persistence with other components, Sustainability is compatible.
- the content of mineral oil contained in the antifoaming agent is more preferably 10 to 20% by mass, and further preferably 15 to 20% by mass.
- As the antifoaming agent having a mineral oil content of 20% by mass or less commercially available products can be generally used. Specifically, Kuriles (registered trademark) 505, 514 manufactured by Kurita Kogyo Co., Ltd. 521 and the like.
- the addition amount of the antifoaming agent is not particularly limited, but the concentration is preferably 1 to 10,000 ppm, and more preferably 10 to 1000 ppm.
- the concentration of the solder resist component removed by thinning in the aqueous solution in the step (E) is preferably 0.5% by mass or less, more preferably. Is 0.3 mass% or less, more preferably 0.2 mass% or less.
- the amount of the solder resist component dissolved in the aqueous solution in step (E) increases due to continuous thinning treatment, clouding unevenness occurs on the thinned solder resist surface, and uneven film thickness occurs at that portion. There is.
- the cloudiness unevenness is considered to be caused by poor dispersibility of the solder resist layer due to the thinning process and poor dissolution, resulting in precipitation of insoluble components, but the details are unknown.
- the solder resist component dissolved in the aqueous solution in step (E) can be removed at any time by circulating the filter.
- the type of the filter can be used without particular limitation, and for example, a depth cartridge filter or a wind cartridge filter manufactured by Advantech Toyo Co., Ltd. can be used.
- the number of filters to be used, the pore diameter, and the like can be freely selected as necessary.
- the concentration of the solder resist component dissolved in the aqueous solution in the step (E) it can be measured as a difference from the absolutely dry mass. Specifically, for example, 10 g of an aqueous solution in which a solder resist component is dissolved is collected in a petri dish and placed in a drier at a temperature of 100 ° C. to completely evaporate moisture. Next, by measuring the mass after evaporation, the amount (% by mass) of the solder resist component dissolved in 10 g of the dissolving liquid can be calculated.
- spray treatment is most preferable from the viewpoint of the dissolution / diffusion rate of the solder resist layer and the uniformity of liquid supply.
- the spray pressure is preferably 0.01 to 0.5 MPa, more preferably 0.02 to 0.3 MPa.
- the spraying method is preferably sprayed from a direction inclined with respect to the direction perpendicular to the surface of the solder resist layer.
- the time to start is preferably 6 seconds or less, more preferably 4 seconds or less.
- the thinning amount of the solder resist layer is determined by the total time from the start of the step (B1), (B2), (B3) or (D) to immediately before washing with water or the start of the step (E). That is, the time from the end of the step (B1), (B2), (B3) or (D) to the start of the cleaning with water or the step (E) also affects the thinning amount.
- the time for shifting from the process (B1), (B2), (B3) or (D) to the process (E) is zero. Even considering the speed, it is virtually impossible. If the time from the end of the step (B1), (B2), (B3) or (D) to the start of the step (E) becomes longer, the progress of the swelling and penetration of the alkaline aqueous solution into the solder resist layer becomes uneven. In some cases, unevenness of the film thickness occurs in the surface.
- Example 1 ⁇ Process (A1)> A circuit board having a connection pad with a wiring width of 50 ⁇ m and a wiring width interval of 50 ⁇ m was produced on a copper-clad laminate (area 170 mm ⁇ 200 mm, copper foil thickness 18 ⁇ m, base material thickness 0.4 mm) using a subtractive method. Next, using a vacuum laminator, a 30 ⁇ m thick solder resist film (manufactured by Taiyo Ink Manufacturing Co., Ltd., trade name: PFR-800 AUS410) was vacuum thermocompression bonded onto the circuit board (lamination temperature 75 ° C., (Suction time 30 seconds, pressurization time 10 seconds). As a result, a solder resist layer having a thickness of 38 ⁇ m from the surface of the insulating substrate to the surface of the solder resist layer was formed.
- a 30 ⁇ m thick solder resist film manufactured by Taiyo Ink Manufacturing Co., Ltd., trade name: PFR-800 AUS410
- solder resist layer In order to cure the solder resist layer, the entire surface was exposed with an exposure amount of 500 mJ / cm 2 , and then a heat curing treatment was performed at 150 ° C. for 60 minutes to form a solder resist pattern.
- the formed solder resist pattern has the structure shown in FIG. 10.
- the connection pad 6 having a thickness of 18 ⁇ m has an exposed metal surface and has a thickness between the adjacent connection pads 6.
- a 12 ⁇ m-thick solder resist layer 3 was embedded.
- Example 2 A circuit board having conductor wiring with a wiring width of 50 ⁇ m and a wiring width interval of 50 ⁇ m was prepared using a copper-clad laminate (area 170 mm ⁇ 200 mm, copper foil thickness 18 ⁇ m, base material thickness 0.4 mm) using a subtractive method. Next, using a vacuum laminator, a 30 ⁇ m thick solder resist film (manufactured by Taiyo Ink Manufacturing Co., Ltd., trade name: PFR-800 AUS410) was vacuum thermocompression bonded onto the circuit board (lamination temperature 75 ° C., (Suction time 30 seconds, pressurization time 10 seconds). As a result, a solder resist layer having a thickness of 38 ⁇ m from the surface of the insulating substrate to the surface of the solder resist layer was formed.
- a solder resist layer having a thickness of 38 ⁇ m from the surface of the insulating substrate to the surface of the solder resist layer was formed.
- solder resist layer In order to cure the solder resist layer, the entire surface was exposed with an exposure amount of 500 mJ / cm 2 , and then a thermosetting treatment was performed at 150 ° C. for 60 minutes.
- the formed solder resist pattern has the structure shown in FIG. 11.
- the conductor wiring 2 having a thickness of 18 ⁇ m is covered with the solder resist layer 3 having a thickness of 38 ⁇ m, and a connection having a thickness of 18 ⁇ m is formed.
- the metal surface of the pad 6 was exposed, and the solder resist layer 3 having a thickness of 12 ⁇ m was buried between the adjacent connection pads 6.
- Example 3 A circuit board having conductor wiring with a wiring width of 50 ⁇ m and a wiring width interval of 50 ⁇ m was prepared using a copper-clad laminate (area 170 mm ⁇ 200 mm, copper foil thickness 18 ⁇ m, base material thickness 0.4 mm) using a subtractive method.
- a vacuum laminator a 30 ⁇ m thick solder resist film (manufactured by Taiyo Ink Manufacturing Co., Ltd., trade name: PFR-800 AUS410) was vacuum thermocompression bonded onto the circuit board (lamination temperature 75 ° C., (Suction time 30 seconds, pressurization time 10 seconds).
- a solder resist layer having a thickness of 38 ⁇ m from the surface of the insulating substrate to the surface of the solder resist layer was formed.
- solder resist layer In order to cure the solder resist layer, the entire surface was exposed with an exposure amount of 500 mJ / cm 2 , and then a thermosetting treatment was performed at 150 ° C. for 60 minutes.
- the formed solder resist pattern has the structure shown in FIG. 12, and as a result of observing it with an optical microscope, the conductor wiring 2 having a thickness of 18 ⁇ m is covered with the solder resist layer 3 having a thickness of 28 ⁇ m, and a connection having a thickness of 18 ⁇ m.
- the metal surface of the pad 6 was exposed, and the solder resist layer 3 having a thickness of 12 ⁇ m was buried between the adjacent connection pads 6.
- Example 4 Using a semi-additive method on a copper clad laminate (area 170 mm x 200 mm, base material thickness 0.4 mm), connection pad and thickness 15 ⁇ m, wiring width 50 ⁇ m, wiring width spacing 25 ⁇ m thick, wiring width 50 ⁇ m, wiring width spacing 50 ⁇ m A circuit board having a conductor wiring of 50 ⁇ m was produced. Next, using a vacuum laminator, a 30 ⁇ m thick solder resist film (manufactured by Taiyo Ink Manufacturing Co., Ltd., trade name: PFR-800 AUS410) was vacuum thermocompression bonded onto the circuit board (lamination temperature 75 ° C., (Suction time 30 seconds, pressurization time 10 seconds). As a result, a solder resist layer having a thickness of 38 ⁇ m from the surface of the insulating substrate to the surface of the solder resist layer was formed.
- solder resist layer having a thickness of 38 ⁇ m from the surface of the insulating substrate to the surface of the sold
- solder resist layer was buried between the adjacent connection pads 6.
- Example 5 ⁇ Process (A3)> Using a semi-additive method on a copper-clad laminate (area 170 mm ⁇ 200 mm, substrate thickness 0, 4 mm), a wiring width of 50 ⁇ m and a wiring width interval of 50 ⁇ m, each wiring has a connection pad with a thickness of 25 ⁇ m and a conductor wiring with a thickness of 15 ⁇ m. A circuit board formed in a step shape was produced.
- solder resist film manufactured by Taiyo Ink Manufacturing Co., Ltd., trade name: PFR-800 AUS410
- laminate temperature 75 ° C. (Suction time 30 seconds, pressurization time 10 seconds).
- solder resist layer having a thickness of 38 ⁇ m from the surface of the insulating substrate to the surface of the solder resist layer was formed.
- solder resist layer was buried between the adjacent connection pads 6.
- a circuit board having conductor wiring with a wiring width of 50 ⁇ m and a wiring width interval of 50 ⁇ m was prepared using a copper-clad laminate (area 170 mm ⁇ 200 mm, copper foil thickness 18 ⁇ m, base material thickness 0.4 mm) using a subtractive method.
- a vacuum laminator using a vacuum laminator, a 30 ⁇ m thick solder resist film (manufactured by Taiyo Ink Manufacturing Co., Ltd., trade name: PFR-800 AUS410) was vacuum thermocompression bonded onto the circuit board (lamination temperature 75 ° C., (Suction time 30 seconds, pressurization time 10 seconds).
- a solder resist layer having a thickness of 38 ⁇ m from the surface of the insulating substrate to the surface of the solder resist layer was formed.
- contact exposure using a photomask was performed at an exposure amount of 300 mJ / cm 2 in order to cure the solder resist layer in a region other than 50 ⁇ m from the end of the connection pad.
- solder resist layer in the non-exposed area was all removed by a development process, and a thermosetting process was performed at 150 ° C. for 60 minutes.
- the formed solder resist pattern has the structure shown in FIG. 15, and the conductor wiring 2 having a thickness of 18 ⁇ m was covered with the solder resist layer 3 having a thickness of 38 ⁇ m.
- the solder resist layer 3 since there is no solder resist layer 3 between adjacent connection pads 6, a connection failure due to a solder bridge occurs in the mounting process.
- a circuit board having conductor wiring with a wiring width of 50 ⁇ m and a wiring width interval of 50 ⁇ m was prepared using a copper-clad laminate (area 170 mm ⁇ 200 mm, copper foil thickness 18 ⁇ m, base material thickness 0.4 mm) using a subtractive method.
- a vacuum laminator using a vacuum laminator, a 30 ⁇ m thick solder resist film (manufactured by Taiyo Ink Manufacturing Co., Ltd., trade name: PFR-800 AUS410) was vacuum thermocompression bonded onto the circuit board (lamination temperature 75 ° C., (Suction time 30 seconds, pressurization time 10 seconds).
- a solder resist layer having a thickness of 38 ⁇ m from the surface of the insulating substrate to the surface of the solder resist layer was formed.
- solder resist layer in the non-exposed area was all removed by development treatment, and a thermosetting treatment was performed at 150 ° C. for 60 minutes.
- the formed solder resist pattern has the structure shown in FIG. 16, in which a conductor wiring 2 having a thickness of 18 ⁇ m is covered with a solder resist layer 3 having a thickness of 38 ⁇ m, and a portion having a width of 20 ⁇ m from an intermediate point between adjacent connection pads 6. There was a solder resist layer 3 having a thickness of 38 ⁇ m.
- solder resist layer 3 on the insulating substrate 1 is in contact with the connection pad 6 due to the positional deviation in the exposure process.
- the amount of solder for ensuring the electrical connection between the electrode terminal and the connection pad cannot be secured, a connection failure occurs at the time of bonding, and the misaligned solder resist layer 3 interferes with component mounting. It was.
- a circuit board having conductor wiring with a wiring width of 50 ⁇ m and a wiring width interval of 50 ⁇ m was prepared using a copper-clad laminate (area 170 mm ⁇ 200 mm, copper foil thickness 18 ⁇ m, base material thickness 0.4 mm) using a subtractive method.
- a vacuum laminator using a vacuum laminator, a 30 ⁇ m thick solder resist film (manufactured by Taiyo Ink Manufacturing Co., Ltd., trade name: PFR-800 AUS410) was vacuum thermocompression bonded onto the circuit board (lamination temperature 75 ° C., (Suction time 30 seconds, pressurization time 10 seconds).
- a solder resist layer having a thickness of 38 ⁇ m from the surface of the insulating substrate to the surface of the solder resist layer was formed.
- the entire surface of the solder resist layer was exposed at an exposure amount of 1000 mJ / cm 2 , and then a thermosetting treatment was performed at 150 ° C. for 60 minutes.
- a wet blast pattern was formed on the surface of the solder resist layer after the thermosetting treatment, and the wet blast treatment was performed until the connection pad surface was exposed using the pattern as a mask. Thereafter, the mask pattern was removed.
- the formed solder resist pattern has the structure shown in FIG. 11. As a result of observing this with an optical microscope, the conductor wiring 2 having a thickness of 18 ⁇ m is covered with the solder resist layer 3 having a thickness of 38 ⁇ m, and a connection having a thickness of 18 ⁇ m is formed.
- connection pads 6 The metal surface of the pad 6 is exposed, and the solder resist layer 3 is embedded between the adjacent connection pads 6. However, there was a variation in the thickness of the solder resist layer embedded between the adjacent connection pads 6, and there was a portion where the solder resist layer remained without completely exposing the metal surface of the connection pad 6. Further, many scratches made by blasting were confirmed on the connection pads 6 whose surfaces were exposed.
- Examples 6 to 27 A solder resist pattern was formed in the same manner as in Example 2 using the alkaline aqueous solution described in Table 1. After the thinning treatment, the thickness of the thinned portion of the solder resist layer was measured at 10 points to examine the maximum value and the minimum value. The results are shown in Table 1. In Examples 2 and 6 to 27, when an aqueous solution having an inorganic alkaline compound content of 3 to 25% by mass was used (Examples 2 and 7 to 27), the difference between the maximum film thickness value and the minimum film thickness value. was sufficiently small, and a solder resist pattern with very good in-plane uniformity after thinning was formed.
- Example 6 in which the content of the inorganic alkaline compound was 1% by mass, the difference between the maximum film thickness value and the minimum film thickness value was slightly large, and it was confirmed that the in-plane uniformity after thinning was deteriorated.
- the rate of thinning becomes the maximum when the concentration is 7% by mass in the comparison of Examples 2 and 6 to 12 and the concentration is 20% by mass in the comparison of Examples 13 to 18 and is higher than that. In the concentration, the thinning rate tended to decrease.
- the time required for the thinning treatment varies depending on the type of the inorganic alkaline compound, and in particular, when using sodium metasilicate, a very fast thinning rate was obtained.
- Example 28 to 41 After producing a circuit board having conductor wiring on a copper-clad laminate using a subtractive method, the surface of the conductor circuit was roughened by chemical polishing treatment, and each of the alkaline aqueous solutions listed in Table 2 was used as an alkaline aqueous solution.
- the solder resist pattern was formed by the same method as in Example 2. In order to examine the presence or absence of solder resist residue on the roughened surface of the connection pad exposed by the thinning treatment, an electroless nickel plating treatment was performed on the exposed copper surface. Moreover, the plating pre-processing was performed as needed, and when there was a residue, the removal property was also investigated. The evaluation criteria are as follows. The results are shown in Table 2. In particular, when an alkaline aqueous solution containing sodium metasilicate was used, no residue of the solder resist component was confirmed even on the roughened surface.
- Example 42 to 55 A solder resist pattern was formed in the same manner as in Example 2 except that the alkaline aqueous solution described in Table 3 was used. After the thinning treatment, the thickness of the thinned portion of the solder resist layer was measured at 10 points to examine the maximum value and the minimum value. The results are shown in Table 3. When an aqueous solution containing an organic alkaline compound content of 5 to 25% by mass is used, the difference between the maximum film thickness and the minimum film thickness is sufficiently small, and the in-plane uniformity after thinning is very good. A solder resist pattern was formed. In Example 42 and Example 43 in which the content of the organic alkaline compound is 3% by mass or less, the difference between the maximum film thickness and the minimum film thickness is slightly large, and the in-plane uniformity after thinning tends to deteriorate. Was confirmed.
- Example 56 After producing a circuit board having conductor wiring on a copper-clad laminate using a subtractive method, the surface of the conductor circuit was roughened by chemical polishing treatment, and each of the alkaline aqueous solutions listed in Table 4 was used as an alkaline aqueous solution.
- the solder resist pattern was formed by the same method as in Example 2. In order to examine the presence or absence of solder resist residue on the roughened surface of the connection pad exposed by the thinning treatment, an electroless nickel plating treatment was performed on the exposed copper surface. Moreover, the plating pre-processing was performed as needed, and when there was a residue, the removal property was also investigated. The evaluation criteria are as follows. The results are shown in Table 4. Even when an organic alkaline compound was used, the residue of the solder resist component on the roughened surface was at a level that could be easily removed by plating pretreatment, and there was no practical problem.
- Example 1 The solder resist patterns prepared in Example 1, Example 2, Example 19, Example 47, Example 53, and Comparative Example 1 were each ion extracted with hot water at 100 ° C., and then extracted from the extract by ion chromatography. Sodium ion concentration was measured. The results are shown in Table 5. When an alkaline aqueous solution containing an organic alkaline compound was used, there was almost no contamination of sodium ions into the solder resist layer. On the other hand, when an alkaline aqueous solution containing an inorganic alkaline compound was used, sodium ions were found to be mixed into the solder resist layer to the same extent as in the development processing in Comparative Example 1.
- Example 1 when the entire surface of the solder resist layer was thinned using an inorganic alkaline compound, the amount of sodium ions mixed was small. From this, it was found that sodium ions tend to increase mainly when there is an exposed portion of the solder resist layer.
- Examples 64-91 In the thinning process of the solder resist layer, the alkaline aqueous solution (liquid temperature 25 ° C.) shown in Table 6 is used, and before the water washing treatment, the aqueous solution in the step (E) shown in Table 7 is used for the spray treatment ( A solder resist pattern was formed in the same manner as in Example 28 except that the spray pressure was 0.20 MPa. The pH of the aqueous solution in step (E) was adjusted by adding dilute sulfuric acid. After the thinning treatment, the thickness of the thinned portion of the solder resist layer was measured at 10 points to examine the maximum value and the minimum value. The results are shown in Table 7.
- Example 67 where the pH of the aqueous solution in the step (E) is 10.3, the difference between the maximum film thickness value and the minimum film thickness value is somewhat large, and the in-plane uniformity after thinning tends to deteriorate. .
- Example 92 to 93 In order to investigate the stability of the continuous thinning process, an alkaline aqueous solution (25 ° C.) shown in Table 8 was used in the thinning process of the solder resist layer, and before the washing process (E The solder resist pattern was formed in the same manner as in Example 2 except that the spray treatment (spray pressure 0.20 MPa) was performed using the aqueous solution.
- the pH of the aqueous solution in step (E) is not adjusted for each sheet processing, and the thickness of the thinned part of the solder resist layer is adjusted between the first thinning process and the 10th thinning process. Ten points were measured and the maximum and minimum values were examined.
- Example 9 The results are shown in Table 9 together with the pH value of the aqueous solution in the step (E).
- Example 2 and Example 20 in which the film was thinned by washing with water after the treatment with the alkaline aqueous solution, the difference between the maximum film thickness and the minimum film thickness increased with the increase in the number of thinned films. There was a tendency for in-plane uniformity to deteriorate.
- Example 92 and Example 93 in which the step (E) was performed before the water washing treatment, the aqueous solution in the step (E) has a buffering capacity, so the pH of the aqueous solution after the thinning treatment of 10 sheets is less than 10. The difference between the maximum value and the minimum value was small, and the in-plane uniformity after thinning was good.
- Example 94 A solder resist pattern was formed in the same manner as in Example 2 except that the solder resist layer was thinned by spraying an aqueous alkali solution at a spray pressure of 0.1 MPa. The spraying time was adjusted so that the thickness of the solder resist layer after thinning became 12 ⁇ m on average.
- the method for forming a solder resist pattern of the present invention can be applied to, for example, an application in which a solder resist pattern is formed on a circuit board provided with connection pads for flip chip connection.
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Abstract
Description
(B1)アルカリ水溶液によって、ソルダーレジスト層の厚みが接続パッドの厚み以下になるまで薄膜化する工程、
をこの順に含むことを特徴とするソルダーレジストパターンの形成方法。
(2)(A2)接続パッドと導体配線を有する回路基板の表面にソルダーレジスト層を形成する工程、
(C)ソルダーレジスト層の厚みが接続パッドの厚み以下になるまで薄膜化される領域以外の部分を露光する工程、
(B2)アルカリ水溶液によって、非露光部のソルダーレジスト層の厚みが接続パッドの厚み以下になるまでソルダーレジスト層を薄膜化する工程、
を含むことを特徴とするソルダーレジストパターンの形成方法。
(3)(A2)工程と(C)工程の間に、
(D)アルカリ水溶液によって、ソルダーレジスト層全面を薄膜化する工程、
を含む請求項2記載のソルダーレジストパターンの形成方法。
(4)(A3)接続パッドと接続パッドより高さの低い導体配線を有する回路基板の表面にソルダーレジスト層を形成する工程、
(B3)アルカリ水溶液によって、ソルダーレジスト層の厚みが接続パッドの厚み以下で、導体配線の厚みよりも厚くなるまで薄膜化する工程、
をこの順に含むことを特徴とするソルダーレジストパターンの形成方法。
(6)無機アルカリ性化合物が、アルカリ金属炭酸塩、アルカリ金属リン酸塩、アルカリ金属水酸化物、アルカリ金属ケイ酸塩から選ばれる少なくともいずれか1種である(5)記載のソルダーレジストパターンの形成方法。
(7)無機アルカリ性化合物が、アルカリ金属ケイ酸塩である(5)記載のソルダーレジストパターンの形成方法。
(8)アルカリ金属ケイ酸塩が、メタケイ酸ナトリウムである(7)に記載のソルダーレジストパターンの形成方法。
(9)無機アルカリ性化合物が、アルカリ金属リン酸塩である(5)記載のレジストパターンの形成方法。
(10)アルカリ金属リン酸塩が、リン酸三ナトリウム、リン酸三カリウムから選ばれる少なくとも1種である(9)記載のレジストパターンの形成方法。
(11)無機アルカリ性化合物が、炭酸カリウムである(5)記載のレジストパターンの形成方法。
(13)有機アルカリ性化合物の含有量が5~25質量%である(12)記載のソルダーレジストパターンの形成方法。
(14)アルカリ水溶液のpHが12.5以上である(1)~(13)のいずれかに記載のソルダーレジストパターンの形成方法。
(E)アルカリ性化合物を含有し、該アルカリ性化合物の含有量がアルカリ水溶液よりも少なく、pH5.0~10.0、温度22~50℃の水溶液で処理する工程、
を含む(1)~(14)のいずれかに記載のソルダーレジストパターンの形成方法。
(16)アルカリ水溶液によってソルダーレジスト層を薄膜化する工程が浸漬処理による(1)~(15)のいずれかに記載のソルダーレジストパターンの形成方法。
[M:ナトリウム又はカリウム、n:モル比(SiO2/M2O)]
<工程(A1)>
銅張積層板(面積170mm×200mm、銅箔厚18μm、基材厚み0.4mm)にサブトラクティブ法を用いて、配線幅50μm、配線幅間隔50μmの接続パッドを有する回路基板を作製した。次に、真空ラミネータを用いて、厚さ30μmのソルダーレジストフィルム(太陽インキ製造(株)製、商品名:PFR−800 AUS410)を上記回路基板上に真空熱圧着させた(ラミネート温度75℃、吸引時間30秒、加圧時間10秒)。これにより絶縁性基板表面からソルダーレジスト層表面までの膜厚が38μmのソルダーレジスト層を形成した。
表1記載のアルカリ水溶液(液温25℃)を用いて、絶縁性基板表面からのソルダーレジスト層の厚みが平均12μmになるように、浸漬方式により、表1に記載の時間で薄膜化処理を行い、十分な水洗処理(液温25℃)、冷風乾燥を経て、薄膜化されたソルダーレジスト層を得た。薄膜化処理後、薄膜化した部分のソルダーレジスト層の厚みを10点測定し、最大値及び最小値を調べた。結果を表1に示す。膜厚最大値と膜厚最小値の差は十分に小さく、良好な面内均一性が得られた。
<工程(A2)>
銅張積層板(面積170mm×200mm、銅箔厚18μm、基材厚み0.4mm)にサブトラクティブ法を用いて、配線幅50μm、配線幅間隔50μmの導体配線を有する回路基板を作製した。次に、真空ラミネータを用いて、厚さ30μmのソルダーレジストフィルム(太陽インキ製造(株)製、商品名:PFR−800 AUS410)を上記回路基板上に真空熱圧着させた(ラミネート温度75℃、吸引時間30秒、加圧時間10秒)。これにより絶縁性基板表面からソルダーレジスト層表面までの膜厚が38μmのソルダーレジスト層を形成した。
導体配線の一部を接続パッドとして、その接続パッドの端部から50μm以外の領域のソルダーレジスト層を硬化させるため、露光量300mJ/cm2でフォトマスクによる密着露光を実施した。
表1記載のアルカリ水溶液(液温25℃)を用いて、非露光部の絶縁性基板表面からのソルダーレジスト層の厚みが平均12μmになるように、浸漬方式により、表1に記載の時間で薄膜化処理を行い、十分な水洗処理(液温25℃)、冷風乾燥を経て、薄膜化されたソルダーレジスト層を得た。薄膜化処理後、薄膜化した部分のソルダーレジスト層の厚みを10点測定し、最大値及び最小値を調べた。結果を表1に示す。膜厚最大値と膜厚最小値の差は十分に小さく、良好な面内均一性が得られた。
<工程(A2)>
銅張積層板(面積170mm×200mm、銅箔厚18μm、基材厚み0.4mm)にサブトラクティブ法を用いて、配線幅50μm、配線幅間隔50μmの導体配線を有する回路基板を作製した。次に、真空ラミネータを用いて、厚さ30μmのソルダーレジストフィルム(太陽インキ製造(株)製、商品名:PFR−800 AUS410)を上記回路基板上に真空熱圧着させた(ラミネート温度75℃、吸引時間30秒、加圧時間10秒)。これにより絶縁性基板表面からソルダーレジスト層表面までの膜厚が38μmのソルダーレジスト層を形成した。
表1記載のアルカリ水溶液(液温25℃)を用いて、絶縁性基板表面からのソルダーレジスト層の厚みが平均28μmになるまで、浸漬方式により、薄膜化処理を行い、十分な水洗処理(液温25℃)、冷風乾燥を経て、薄膜化されたソルダーレジスト層を得た。
導体配線の一部を接続パッドとして、その接続パッドの端部から50μm以外の領域のソルダーレジスト層を硬化させるため、露光量300mJ/cm2でフォトマスクによる密着露光を実施した。
表1記載のアルカリ水溶液(液温25℃)を用いて、非露光部の絶縁性基板表面からのソルダーレジスト層の厚みが平均12μmになるように、浸漬方式により、表1に記載の時間で薄膜化処理を行い、十分な水洗処理(液温25℃)、冷風乾燥により薄膜化されたソルダーレジスト層を得た。薄膜化処理後、薄膜化した部分のソルダーレジスト層の厚みを10点測定し、最大値及び最小値を調べた。結果を表1に示す。膜厚最大値と膜厚最小値の差は十分に小さく、良好な面内均一性が得られた。
<工程(A3)>
銅張積層板(面積170mm×200mm、基材厚み0.4mm)にセミアディティブ法を用いて、厚み25μm、配線幅50μm、配線幅間隔50μmの接続パッドと厚み15μm、配線幅50μm、配線幅間隔50μmの導体配線を有する回路基板を作製した。次に、真空ラミネータを用いて、厚さ30μmのソルダーレジストフィルム(太陽インキ製造(株)製、商品名:PFR−800 AUS410)を上記回路基板上に真空熱圧着させた(ラミネート温度75℃、吸引時間30秒、加圧時間10秒)。これにより絶縁性基板表面からソルダーレジスト層表面までの膜厚が38μmのソルダーレジスト層を形成した。
表1記載のアルカリ水溶液(液温25℃)を用いて、絶縁性基板表面からのソルダーレジスト層の厚みが平均20μmになるように、浸漬方式により、表1に記載の時間で薄膜化処理を行い、十分な水洗処理(液温25℃)、冷風乾燥を経て、薄膜化されたソルダーレジスト層を得た。薄膜化処理後、薄膜化した部分のソルダーレジスト層の厚みを10点測定し、最大値及び最小値を調べた。結果を表1に示す。膜厚最大値と膜厚最小値の差は十分に小さく、良好な面内均一性が得られた。
<工程(A3)>
銅張積層板(面積170mm×200mm、基材厚み0、4mm)にセミアディティブ法を用いて、配線幅50μm、配線幅間隔50μmで、各配線に厚み25μmの接続パッドと厚み15μmの導体配線が階段状に形成された回路基板を作製した。次に、真空ラミネータを用いて、厚さ30μmのソルダーレジストフィルム(太陽インキ製造(株)製、商品名:PFR−800 AUS410)を上記回路基板上に真空熱圧着させた(ラミネート温度75℃、吸引時間30秒、加圧時間10秒)。これにより絶縁性基板表面からソルダーレジスト層表面までの膜厚が38μmのソルダーレジスト層を形成した。
表1記載のアルカリ水溶液(液温25℃)を用いて、絶縁性基板表面からのソルダーレジスト層の厚みが平均20μmになるように、浸漬方式により、表1に記載の時間で薄膜化処理を行い、十分な水洗処理(液温25℃)、冷風乾燥を経て、薄膜化されたソルダーレジスト層を得た。薄膜化処理後、薄膜化した部分のソルダーレジスト層の厚みを10点測定し、最大値及び最小値を調べた。結果を表1に示す。膜厚最大値と膜厚最小値の差は十分に小さく、良好な面内均一性が得られた。
銅張積層板(面積170mm×200mm、銅箔厚18μm、基材厚み0.4mm)にサブトラクティブ法を用いて、配線幅50μm、配線幅間隔50μmの導体配線を有する回路基板を作製した。次に、真空ラミネータを用いて、厚さ30μmのソルダーレジストフィルム(太陽インキ製造(株)製、商品名:PFR−800 AUS410)を上記回路基板上に真空熱圧着させた(ラミネート温度75℃、吸引時間30秒、加圧時間10秒)。これにより絶縁性基板表面からソルダーレジスト層表面までの膜厚が38μmのソルダーレジスト層を形成した。
銅張積層板(面積170mm×200mm、銅箔厚18μm、基材厚み0.4mm)にサブトラクティブ法を用いて、配線幅50μm、配線幅間隔50μmの導体配線を有する回路基板を作製した。次に、真空ラミネータを用いて、厚さ30μmのソルダーレジストフィルム(太陽インキ製造(株)製、商品名:PFR−800 AUS410)を上記回路基板上に真空熱圧着させた(ラミネート温度75℃、吸引時間30秒、加圧時間10秒)。これにより絶縁性基板表面からソルダーレジスト層表面までの膜厚が38μmのソルダーレジスト層を形成した。
銅張積層板(面積170mm×200mm、銅箔厚18μm、基材厚み0.4mm)にサブトラクティブ法を用いて、配線幅50μm、配線幅間隔50μmの導体配線を有する回路基板を作製した。次に、真空ラミネータを用いて、厚さ30μmのソルダーレジストフィルム(太陽インキ製造(株)製、商品名:PFR−800 AUS410)を上記回路基板上に真空熱圧着させた(ラミネート温度75℃、吸引時間30秒、加圧時間10秒)。これにより絶縁性基板表面からソルダーレジスト層表面までの膜厚が38μmのソルダーレジスト層を形成した。
表1記載のアルカリ水溶液を用いて、実施例2と同じ方法で、ソルダーレジストパターンの形成を行った。薄膜化処理後、薄膜化した部分のソルダーレジスト層の厚みを10点測定し、最大値及び最小値を調べた。結果を表1に示す。実施例2、6~27において、無機アルカリ性化合物の含有量が3~25質量%の水溶液を用いた場合(実施例2、7~27)には、膜厚最大値と膜厚最小値の差は十分に小さく、薄膜化後の面内均一性が非常に良好なソルダーレジストパターンが形成されていた。無機アルカリ性化合物の含有量が1質量%である実施例6においては、膜厚最大値と膜厚最小値の差がやや大きく、薄膜化後の面内均一性が悪化する傾向が確認された。薄膜化速度については、実施例2、6~12の比較では濃度7質量%の場合、実施例13~18の比較では濃度20質量%の場合に、薄膜化速度が最大となり、それよりも高濃度では、薄膜化速度が低下する傾向があった。また、無機アルカリ性化合物の種類によって、薄膜化処理に要する時間は異なり、特に、メタケイ酸ナトリウムを用いた場合に非常に速い薄膜化速度が得られた。
銅張積層板にサブトラクティブ法を用いて導体配線を有する回路基板を作製した後、化学研磨処理によって導体回路表面を粗面化し、アルカリ水溶液としてそれぞれ表2に記載のアルカリ水溶液を用いた以外は、実施例2と同じ方法でソルダーレジストパターンの形成を行った。薄膜化処理によって露出された接続パッドの粗面化表面におけるソルダーレジスト残渣の有無を調べるため、露出した銅表面に対して無電解ニッケルめっき処理を行った。また、必要に応じてめっき前処理を行い、残渣がある場合には、その除去性についても調査を行った。評価基準は以下の通りである。結果を表2に示す。特に、メタケイ酸ナトリウムを含むアルカリ水溶液を用いた場合、粗面化表面上においてもソルダーレジスト成分の残渣が確認されなかった。
△:極微量の残渣があるが、めっき前処理によって容易に除去されるレベル
×:多量の残渣があり、めっき前処理によって容易に除去されないレベル
表3に記載のアルカリ水溶液を用いた以外は、実施例2と同じ方法でソルダーレジストパターンの形成を行った。薄膜化処理後、薄膜化した部分のソルダーレジスト層の厚みを10点測定し、最大値及び最小値を調べた。結果を表3に示す。有機アルカリ性化合物の含有量が5~25質量%の水溶液を用いた場合には、膜厚最大値と膜厚最小値の差は十分に小さく、薄膜化後の面内均一性が非常に良好なソルダーレジストパターンが形成されていた。有機アルカリ性化合物の含有量が3質量%以下である実施例42、実施例43においては、膜厚最大値と膜厚最小値の差がやや大きく、薄膜化後の面内均一性が悪化する傾向が確認された。
銅張積層板にサブトラクティブ法を用いて導体配線を有する回路基板を作製した後、化学研磨処理によって導体回路表面を粗面化し、アルカリ水溶液としてそれぞれ表4に記載のアルカリ水溶液を用いた以外は、実施例2と同じ方法でソルダーレジストパターンの形成を行った。薄膜化処理によって露出された接続パッドの粗面化表面におけるソルダーレジスト残渣の有無を調べるため、露出した銅表面に対して無電解ニッケルめっき処理を行った。また、必要に応じてめっき前処理を行い、残渣がある場合には、その除去性についても調査を行った。評価基準は以下の通りである。結果を表4に示す。有機アルカリ性化合物を用いた場合でも、粗面化表面上のソルダーレジスト成分の残渣はめっき前処理によって容易に除去できるレベルであり、実用上問題になるものはなかった。
実施例1、実施例2、実施例19、実施例47、実施例53、比較例1において作製したソルダーレジストパターンをそれぞれ100℃の熱水でイオン抽出した後、抽出液からイオンクロマトグラフィー法によりナトリウムイオン濃度を測定した。結果を表5に示す。有機アルカリ性化合物を含有するアルカリ水溶液を用いた場合、ソルダーレジスト層中へのナトリウムイオンの混入はほとんどなかった。一方、無機アルカリ性化合物を含有するアルカリ水溶液を用いた場合には、比較例1における現像処理と同等程度のソルダーレジスト層中へのナトリウムイオンの混入が認められた。ただ、実施例1において、無機アルカリ性化合物を用いてソルダーレジスト層全面を薄膜化処理した場合には、ナトリウムイオンの混入量は少なかった。このことから、ナトリウムイオンの混入は、主にソルダーレジスト層の露光部が存在した場合に多くなる傾向があることが分かった。
ソルダーレジスト層の薄膜化処理において、表6記載のアルカリ水溶液(液温25℃)を使用し、かつ、水洗処理の前に、表7に示す工程(E)の水溶液を使用してスプレー処理(スプレー圧0.20MPa)を行った以外は、実施例28と同じ方法で、ソルダーレジストパターンの形成を行った。また、工程(E)の水溶液のpHは、希薄濃度の硫酸を添加することによって調整した。薄膜化処理後、薄膜化した部分のソルダーレジスト層の厚みを10点測定し、最大値及び最小値を調べた。結果を表7に示す。工程(E)の水溶液のpHが5.0~10.0では、膜厚最大値と膜厚最小値の差は小さく、薄膜化後の面内均一性は良好だった。工程(E)の水溶液のpHが10.3である実施例67では、膜厚最大値と膜厚最小値の差がやや大きく、薄膜化後の面内均一性が悪化する傾向が確認された。
連続薄膜化処理の安定性を調べるため、ソルダーレジスト層の薄膜化処理において、表8記載の示すアルカリ水溶液(25℃)を使用し、かつ、水洗処理の前に、表8に示す工程(E)の水溶液を使用してスプレー処理(スプレー圧0.20MPa)を行った以外は、実施例2と同じ方法で、ソルダーレジストパターンの形成を行った。連続薄膜化処理中、1枚処理毎に工程(E)の水溶液のpHは調整せず、薄膜化処理1枚目と薄膜化処理10枚目において、薄膜化した部分のソルダーレジスト層の厚みを10点測定し、最大値及び最小値を調べた。工程(E)の水溶液のpHの値とともに結果を表9に示す。アルカリ水溶液による処理の後、水洗処理によって薄膜化を行った実施例2、実施例20では、薄膜化処理枚数の増加とともに膜厚最大値と膜厚最小値の差が大きくなり、薄膜化後の面内均一性が悪化する傾向があった。水洗処理の前に工程(E)を行った実施例92、実施例93では、工程(E)の水溶液が緩衝能力を有するため、10枚薄膜化処理後における該水溶液のpHは10未満であり、膜厚最大値と膜厚最小値の差も小さく、薄膜化後の面内均一性は良好だった。
ソルダーレジスト層の薄膜化処理において、アルカリ水溶液をスプレー圧0.1MPaで噴射するスプレー処理で行った以外は、実施例2と同じ方法でソルダーレジストパターンの形成を行った。薄膜化後のソルダーレジスト層の厚みが平均12μmになるように、スプレー噴射時間を調整した。アルカリ水溶液をスプレー噴射によって供給する際、アルカリ水溶液中に大量に発生した気泡が薄膜化すべきソルダーレジスト層表面に付着し、局所的に薄膜化されない厚膜部分が膜厚ムラとして確認された。そこで、気泡が発生しないようにスプレー圧を0.03MPaまで低くし、アルカリ水溶液噴射後の液の回収経路にも泡トラップ用のフィルターを配置したところ、上記で発生したような局所的な膜厚ムラは実用上問題にならないレベルまで低減した。
2 導体配線
3 ソルダーレジスト層
4 フォトマスク
5 活性光線
6 接続パッド
Claims (16)
- (A1)接続パッドを有する回路基板の表面にソルダーレジスト層を形成する工程、
(B1)アルカリ水溶液によって、ソルダーレジスト層の厚みが接続パッドの厚み以下になるまで薄膜化する工程、
をこの順に含むことを特徴とするソルダーレジストパターンの形成方法。 - (A2)接続パッドと導体配線を有する回路基板の表面にソルダーレジスト層を形成する工程、
(C)ソルダーレジスト層の厚みが接続パッドの厚み以下になるまで薄膜化される領域以外の部分を露光する工程、
(B2)アルカリ水溶液によって、非露光部のソルダーレジスト層の厚みが接続パッドの厚み以下になるまでソルダーレジスト層を薄膜化する工程、
を含むことを特徴とするソルダーレジストパターンの形成方法。 - (A2)工程と(C)工程の間に、
(D)アルカリ水溶液によって、ソルダーレジスト層全面を薄膜化する工程、
を含む請求項2記載のソルダーレジストパターンの形成方法。 - (A3)接続パッドと接続パッドより高さの低い導体配線を有する回路基板の表面にソルダーレジスト層を形成する工程、
(B3)アルカリ水溶液によって、ソルダーレジスト層の厚みが接続パッドの厚み以下で、導体配線の厚みよりも厚くなるまで薄膜化する工程、
をこの順に含むことを特徴とするソルダーレジストパターンの形成方法。 - アルカリ水溶液が、無機アルカリ性化合物を含有してなる水溶液であり、該無機アルカリ性化合物の含有量が3~25質量%である請求項1~4のいずれかに記載のソルダーレジストパターンの形成方法。
- 無機アルカリ性化合物が、アルカリ金属炭酸塩、アルカリ金属リン酸塩、アルカリ金属水酸化物、アルカリ金属ケイ酸塩から選ばれる少なくともいずれか1種である請求項5記載のソルダーレジストパターンの形成方法。
- 無機アルカリ性化合物が、アルカリ金属ケイ酸塩である請求項5記載のソルダーレジストパターンの形成方法。
- アルカリ金属ケイ酸塩が、メタケイ酸ナトリウムである請求項7に記載のソルダーレジストパターンの形成方法。
- 無機アルカリ性化合物が、アルカリ金属リン酸塩である請求項5記載のレジストパターンの形成方法。
- アルカリ金属リン酸塩が、リン酸三ナトリウム、リン酸三カリウムから選ばれる少なくとも1種である請求項9記載のレジストパターンの形成方法。
- 無機アルカリ性化合物が、炭酸カリウムである請求項5記載のレジストパターンの形成方法。
- アルカリ水溶液が、有機アルカリ性化合物を含有してなる水溶液である請求項1~4のいずれかに記載のソルダーレジストパターンの形成方法。
- 有機アルカリ性化合物の含有量が5~25質量%である請求項12記載のソルダーレジストパターンの形成方法。
- アルカリ水溶液のpHが12.5以上である請求項1~13のいずれかに記載のソルダーレジストパターンの形成方法。
- アルカリ水溶液によって、ソルダーレジスト層を薄膜化する工程の後に、
(E)アルカリ性化合物を含有し、該アルカリ性化合物の含有量がアルカリ水溶液よりも少なく、pH5.0~10.0、温度22~50℃の水溶液で処理する工程、
を含む請求項1~14のいずれかに記載のソルダーレジストパターンの形成方法。 - アルカリ水溶液によってソルダーレジスト層を薄膜化する工程が浸漬処理による請求項1~15のいずれかに記載のソルダーレジストパターンの形成方法。
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CN114245575A (zh) * | 2021-11-16 | 2022-03-25 | 龙南骏亚电子科技有限公司 | 一种pcb阻焊锯齿形电路板的设计方法 |
CN114885510A (zh) * | 2022-04-18 | 2022-08-09 | 安捷利美维电子(厦门)有限责任公司 | 一种减少铜面油墨黑点污染的方法 |
CN114885510B (zh) * | 2022-04-18 | 2023-07-04 | 安捷利美维电子(厦门)有限责任公司 | 一种减少铜面油墨黑点污染的方法 |
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KR20130099093A (ko) | 2013-09-05 |
JP6124372B2 (ja) | 2017-05-10 |
CN103109588B (zh) | 2016-09-07 |
JPWO2012043201A1 (ja) | 2014-02-06 |
KR101891949B1 (ko) | 2018-08-27 |
JP5871396B2 (ja) | 2016-03-01 |
KR101891840B1 (ko) | 2018-08-24 |
KR20180075697A (ko) | 2018-07-04 |
JP2016048786A (ja) | 2016-04-07 |
CN103109588A (zh) | 2013-05-15 |
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