TW202113507A - 光阻除去用組成物 - Google Patents
光阻除去用組成物 Download PDFInfo
- Publication number
- TW202113507A TW202113507A TW109125482A TW109125482A TW202113507A TW 202113507 A TW202113507 A TW 202113507A TW 109125482 A TW109125482 A TW 109125482A TW 109125482 A TW109125482 A TW 109125482A TW 202113507 A TW202113507 A TW 202113507A
- Authority
- TW
- Taiwan
- Prior art keywords
- tin
- copper
- group
- semiconductor element
- photoresist
- Prior art date
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 120
- 239000000203 mixture Substances 0.000 title claims abstract description 111
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 235
- 229910052802 copper Inorganic materials 0.000 claims abstract description 232
- 239000010949 copper Substances 0.000 claims abstract description 232
- 239000004065 semiconductor Substances 0.000 claims abstract description 129
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 119
- 229910001128 Sn alloy Inorganic materials 0.000 claims abstract description 102
- 238000007747 plating Methods 0.000 claims abstract description 62
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000003495 polar organic solvent Substances 0.000 claims abstract description 21
- 150000005846 sugar alcohols Chemical class 0.000 claims abstract description 17
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 16
- 125000001453 quaternary ammonium group Chemical group 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052718 tin Inorganic materials 0.000 claims description 103
- 239000000758 substrate Substances 0.000 claims description 63
- 238000004519 manufacturing process Methods 0.000 claims description 51
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 claims description 43
- 239000000600 sorbitol Substances 0.000 claims description 43
- 235000010356 sorbitol Nutrition 0.000 claims description 43
- -1 azole compound Chemical class 0.000 claims description 18
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 claims description 16
- 229960005323 phenoxyethanol Drugs 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 14
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 11
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 10
- HEBKCHPVOIAQTA-UHFFFAOYSA-N meso ribitol Natural products OCC(O)C(O)C(O)CO HEBKCHPVOIAQTA-UHFFFAOYSA-N 0.000 claims description 9
- ZUAURMBNZUCEAF-UHFFFAOYSA-N 2-(2-phenoxyethoxy)ethanol Chemical compound OCCOCCOC1=CC=CC=C1 ZUAURMBNZUCEAF-UHFFFAOYSA-N 0.000 claims description 7
- TVXBFESIOXBWNM-UHFFFAOYSA-N Xylitol Natural products OCCC(O)C(O)C(O)CCO TVXBFESIOXBWNM-UHFFFAOYSA-N 0.000 claims description 7
- 239000000811 xylitol Substances 0.000 claims description 7
- 235000010447 xylitol Nutrition 0.000 claims description 7
- HEBKCHPVOIAQTA-SCDXWVJYSA-N xylitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)CO HEBKCHPVOIAQTA-SCDXWVJYSA-N 0.000 claims description 7
- 229960002675 xylitol Drugs 0.000 claims description 7
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 6
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 6
- FBPFZTCFMRRESA-KVTDHHQDSA-N D-Mannitol Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-KVTDHHQDSA-N 0.000 claims description 6
- 229930195725 Mannitol Natural products 0.000 claims description 6
- 239000000594 mannitol Substances 0.000 claims description 6
- 235000010355 mannitol Nutrition 0.000 claims description 6
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 claims description 5
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 5
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 claims description 5
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 5
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 5
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 4
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 4
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 4
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 4
- BSIUFWMDOOFBSP-UHFFFAOYSA-N 2-azanylethanol Chemical compound NCCO.NCCO BSIUFWMDOOFBSP-UHFFFAOYSA-N 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 1
- 230000007797 corrosion Effects 0.000 abstract description 10
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- 239000010410 layer Substances 0.000 description 110
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 89
- 230000000052 comparative effect Effects 0.000 description 18
- 238000011282 treatment Methods 0.000 description 15
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- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 8
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
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- 239000011889 copper foil Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229940102253 isopropanolamine Drugs 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
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- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- UNXHWFMMPAWVPI-UHFFFAOYSA-N Erythritol Natural products OCC(O)C(O)CO UNXHWFMMPAWVPI-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
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- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 239000002998 adhesive polymer Substances 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
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- LXQMHOKEXZETKB-UHFFFAOYSA-N 1-amino-2-methylpropan-2-ol Chemical compound CC(C)(O)CN LXQMHOKEXZETKB-UHFFFAOYSA-N 0.000 description 1
- KODLUXHSIZOKTG-UHFFFAOYSA-N 1-aminobutan-2-ol Chemical compound CCC(O)CN KODLUXHSIZOKTG-UHFFFAOYSA-N 0.000 description 1
- MPGVRLGIUWFEPA-UHFFFAOYSA-N 1-aminooctan-2-ol Chemical compound CCCCCCC(O)CN MPGVRLGIUWFEPA-UHFFFAOYSA-N 0.000 description 1
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- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 1
- VOKXCKZXSBBOPC-UHFFFAOYSA-N 2-(2-chlorophenyl)-1-[2-(2-chlorophenyl)-4,5-diphenylimidazol-1-yl]-4,5-diphenylimidazole Chemical compound ClC1=CC=CC=C1C(N1N2C(=C(N=C2C=2C(=CC=CC=2)Cl)C=2C=CC=CC=2)C=2C=CC=CC=2)=NC(C=2C=CC=CC=2)=C1C1=CC=CC=C1 VOKXCKZXSBBOPC-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
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Abstract
本發明提供除了銅配線以外亦能一邊防止錫鍍敷及錫合金鍍敷受到腐蝕,一邊從印刷電路板或半導體晶圓將光阻予以除去之水性組成物、及使用其之光阻之除去方法。本發明之水性組成物係含有烷醇胺(A)、氫氧化四級銨(B)、糖醇(C)、極性有機溶劑(D)及水(E)之組成物,其特徵為:按組成物之全量為基準計,烷醇胺(A)之含量為2.5~50質量%,氫氧化四級銨(B)之含量為0.5~4質量%,糖醇(C)之含量為0.5~20質量%。
Description
本發明關於用於將在至少一部分具有銅配線之絕緣層上形成含有成為該銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案用的光阻於該電路圖案形成後予以去除之組成物,及使用其之光阻之除去方法。又,本發明關於包括使用上述組成物將上述光阻予以除去之步驟之半導體元件搭載用封裝基板、半導體元件及半導體封裝體的製造方法。
近年來,伴隨著電子設備之小型化、輕量化及高功能化,印刷電路板被強烈要求銅配線之微細化及高密度化。
印刷電路板之製造步驟中,在一部分具有銅配線之絕緣層上形成稱作種子層之金屬層,再於該表面上形成光阻層,並經曝光顯影形成抗蝕劑圖案後,於圖案開口部實施銅鍍敷,然後,將光阻及種子層除去而形成將成為銅配線之連接端子部的電路圖案。
就光阻而言,多使用乾式薄膜抗蝕劑,通常係使用氫氧化鈉及氫氧化鉀等無機鹼之水溶液將光阻從基板予以除去。又,針對半導體元件搭載用封裝基板等的根據配線形成之難易度而具有高度微細配線的印刷電路板,係使用胺水溶液,例如將胺、四級銨鹽、極性溶劑及銅腐蝕抑制劑等予以組合而成之光阻剝離液將光阻從基板予以除去(專利文獻1等)。
以往係於銅配線之連接端子部使用焊球來將印刷電路板(例如半導體元件搭載用封裝基板)與半導體元件等零件予以電性連接,近年則伴隨著零件之小型化及配線之高密度化而有將焊球置換成錫鍍敷或錫合金鍍敷的趨勢。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特開2015-46575號公報
[發明所欲解決之課題]
在印刷電路板之製造步驟中,錫鍍敷通常係在於絕緣層上之圖案開口部實施銅鍍敷之後直接在銅鍍敷上實施。此時,在實施錫鍍敷後將光阻予以除去時,若使用鹼藥液,則錫鍍敷將容易受到損害。又,在半導體元件之製造步驟中,在半導體晶圓上形成銅鍍敷,再於其表面上實施錫鍍敷後,在將光阻予以除去時會發生同樣的問題。使用錫合金鍍敷替代錫鍍敷時,或併用錫鍍敷與錫合金鍍敷時亦有同樣的問題。
在這種狀況下,希望提供除了銅以外,亦能一邊抑制錫及錫合金之腐蝕並一邊從印刷電路板或半導體晶圓將光阻予以除去之組成物及光阻之除去方法。
[解決課題之手段]
本發明係提供以下所示之光阻除去用組成物、光阻之除去方法、以及包括使用上述光阻除去用組成物將光阻予以除去之步驟之半導體元件搭載用封裝基板、半導體元件及半導體封裝體的製造方法。
[1]一種組成物,係用於將在至少一部分具有銅配線之絕緣層上形成含有成為該銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案用的光阻於該電路圖案形成後予以去除,
含有烷醇胺(A)、氫氧化四級銨(B)、糖醇(C)、極性有機溶劑(D)及水(E),
按組成物之全量為基準計,鏈烷醇胺(A)之含量為2.5~50質量%,氫氧化四級銨(B)之含量為0.5~4質量%,糖醇(C)之含量為0.5~20質量%,
極性有機溶劑(D)係選自於由乙二醇單乙醚、2-丁氧乙醇、苯氧乙醇(phenyl glycol)、丙二醇單乙醚、二乙二醇單乙醚、二乙二醇單丁醚、及二乙二醇單苯基醚構成之群組中之1種以上,
該組成物實質上不含有唑化合物。
[2]如[1]之組成物,其中,選自於由錫及錫合金構成之群組中之至少1種之在50℃時的蝕刻速率為0.1μm/分以下。
[3]如[1]或[2]之組成物,其中,水(E)之含量按組成物之全量為基準計,係40質量%以上。
[4]如[1]至[3]中任一項之組成物,其中,極性有機溶劑(D)之含量,按組成物之全量為基準計,係0.5~10質量%。
[5]如[1]至[4]中任一項之組成物,其中,極性有機溶劑(D)係選自於由苯氧乙醇及二乙二醇單苯基醚構成之群組中之1種以上。
[6]如[1]至[5]中任一項之組成物,其中,糖醇(C)係選自於由山梨醇、木糖醇、及甘露醇構成之群組中之1種以上。
[7]如[1]至[6]中任一項之組成物,其中,氫氧化四級銨(B)係選自於由氫氧化四甲基銨、氫氧化四乙基銨、及氫氧化三乙基甲基銨構成之群組中之1種以上。
[8]如[1]至[7]中任一項之組成物,其中,烷醇胺(A)係選自於由2-胺基乙醇(單乙醇胺)及1-胺基-2-丙醇構成之群組中之1種以上。
[9]如[1]至[8]中任一項之組成物,其中,該連接端子部係印刷電路板中之銅配線的連接端子部。
[10]如[1]至[8]中任一項之組成物,其中,該連接端子部係半導體元件搭載用封裝基板或半導體元件中之銅配線的連接端子部。
[11]一種光阻之除去方法,包括使如[1]至[10]中任一項之組成物接觸在至少一部分具有銅配線之絕緣層上形成含有成為該銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案用的光阻之步驟。
[12]一種半導體元件搭載用封裝基板之製造方法,係具有含有成為銅配線及該銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案的半導體元件搭載用封裝基板之製造方法,
包括以下步驟:
銅層形成步驟,在至少一部分具有銅配線之絕緣層上形成銅層,
抗蝕劑圖案形成步驟,在該銅層之表面形成乾式薄膜抗蝕劑層,並將該乾式薄膜抗蝕劑層進行曝光顯影而形成由光阻構成之抗蝕劑圖案,
電路圖案形成步驟,在該抗蝕劑圖案之開口部實施銅鍍敷,並在該銅鍍敷上實施由錫鍍敷及錫合金鍍敷構成之群組中之至少1種,而形成含有成為該銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案,
光阻去除步驟,在形成該電路圖案後,使如[1]至[10]中任一項之組成物接觸該光阻而將該光阻去除,
銅層去除步驟,在將該光阻去除後,將露出之該銅層去除。
[13]一種半導體元件之製造方法,係具有含有成為銅配線及該銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案的半導體元件之製造方法,
包括以下步驟:
銅層形成步驟,在至少一部分具有銅配線之絕緣層上形成銅層,
抗蝕劑圖案形成步驟,在該銅層之表面形成乾式薄膜抗蝕劑層,並將該乾式薄膜抗蝕劑層進行曝光顯影而形成由光阻構成之抗蝕劑圖案,
電路圖案形成步驟,在該抗蝕劑圖案之開口部實施銅鍍敷,並在該銅鍍敷上實施由錫鍍敷及錫合金鍍敷構成之群組中之至少1種,形成含有成為該銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案,
光阻去除步驟,在形成該電路圖案後,使如[1]至[10]中任一項之組成物接觸該光阻而將該光阻去除,
銅層去除步驟,在將該光阻去除後,將露出之該銅層去除。
[14]一種半導體封裝體之製造方法,係包括介隔著選自於由錫及錫合金構成之群組中之至少1種將半導體元件搭載用封裝基板與半導體元件予以電性連接之步驟的半導體封裝體之製造方法,
該半導體元件搭載用封裝基板及該半導體元件中之至少一者,具有含有成為連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種的電路圖案,
當該半導體元件搭載用封裝基板具有含有銅以及選自於由錫及錫合金構成之群組中之至少1種的電路圖案的時候,根據如[12]之半導體元件搭載用封裝基板之製造方法來製造具有含有銅以及選自於由錫及錫合金構成之群組中之至少1種的電路圖案的半導體元件搭載用封裝基板,
當該半導體元件具有含有銅以及選自於由錫及錫合金構成之群組中之至少1種的電路圖案的時候,根據如[13]之半導體元件之製造方法來製造具有含有銅以及選自於由錫及錫合金構成之群組中之至少1種的電路圖案的半導體元件,
且包括以下步驟:
將該半導體元件搭載用封裝基板及該半導體元件以各自之連接部面對的方式配置,並加熱到選自於由錫及錫合金構成之群組中之至少1種會熔融的溫度,而使半導體元件搭載用封裝基板與半導體元件介隔著選自於由錫及錫合金構成之群組中之至少1種而電性連接。
[發明之效果]
根據本發明之較佳態樣,藉由使用本發明之光阻除去用組成物,於印刷電路板或半導體元件中使用光阻於至少一部分具有銅配線之絕緣層上形成含有成為該銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案之後,可一邊抑制該電路圖案受到損害並一邊將光阻予以除去。
以下針對本發明之光阻除去用組成物、光阻之除去方法、以及包括光阻之除去步驟之半導體元件搭載用封裝基板、半導體元件及半導體封裝體的製造方法進行具體說明。又,本發明並不限定於此,在不脫離其要旨之範圍內可有各種變形。
1.光阻除去用組成物
本發明之光阻除去用組成物(以下亦稱作「本發明之組成物」),係用於將在至少一部分具有銅配線之絕緣層上形成含有成為該銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案用的光阻於該電路圖案形成後予以去除之組成物,其特徵為:
含有烷醇胺(A)、氫氧化四級銨(B)、糖醇(C)、極性有機溶劑(D)及水(E),
按組成物之全量為基準計,鏈烷醇胺(A)之含量為2.5~50質量%,氫氧化四級銨(B)之含量為0.5~4質量%,糖醇(C)之含量為0.5~20質量%,
極性有機溶劑(D)係選自於由乙二醇單乙醚、2-丁氧乙醇、苯氧乙醇、丙二醇單乙醚、二乙二醇單乙醚、二乙二醇單丁醚、及二乙二醇單苯基醚構成之群組中之1種以上,
實質上不含有唑化合物。
本發明之組成物,可將在至少一部分具有銅配線之絕緣層上形成含有成為該銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案用的光阻予以除去。根據本發明之較佳態樣,在使用光阻形成電路圖案之後,能一邊抑制獲得之電路圖案受到損害一邊將光阻予以除去。
又,本說明書中所謂「錫合金」,只要是在錫中添加1種以上之錫以外的金屬元素或非金屬元素並具有金屬性質者則無特別限定。錫合金中上述金屬元素或非金屬元素的含量並不特別限定,包含50質量%以上的錫較為理想,80質量%以上更為理想,90質量%以上更甚理想,包含98質量%以上又更甚理想。就上述金屬元素或非金屬元素而言,可列舉如銀(Ag)。
以下,針對本發明之組成物中含有之各成分進行說明。
[烷醇胺(A)]
本發明之組成物包含烷醇胺(A)(以下亦稱作成分(A))。就烷醇胺(A)而言,並不特別限定,可列舉如單烷醇胺、二烷醇胺、三烷醇胺、及它們的烷基化物(N-烷基化物、O-烷基化物)。
就烷醇胺(A)而言,較佳可列舉如2-胺基乙醇(單乙醇胺)、N-甲基乙醇胺、N-乙基乙醇胺、N-丙基乙醇胺、N-丁基乙醇胺、二乙醇胺、1-胺基-2-丙醇(異丙醇胺)、N-甲基異丙醇胺、N-乙基異丙醇胺、N-丙基異丙醇胺、2-胺基丙烷-1-醇、N-甲基-2-胺基-丙烷-1-醇、N-乙基-2-胺基-丙烷-1-醇、1-胺基丙烷-3-醇、N-甲基-1-胺基丙烷-3-醇、N-乙基-1-胺基丙烷-3-醇、1-胺基丁烷-2-醇、N-甲基-1-胺基丁烷-2-醇、N-乙基-1-胺基丁烷-2-醇、2-胺基丁烷-1-醇、N-甲基-2-胺基丁烷-1-醇、N-乙基-2-胺基丁烷-1-醇、3-胺基丁烷-1-醇、N-甲基-3-胺基丁烷-1-醇、N-乙基-3-胺基丁烷-1-醇、1-胺基丁烷-4-醇、N-甲基1-胺基丁烷-4-醇、N-乙基-1-胺基丁烷-4-醇、1-胺基-2-甲基丙烷-2-醇、2-胺基-2-甲基丙烷-1-醇、1-胺基戊烷-4-醇、2-胺基-4-甲基戊烷-1-醇、2-胺基己烷-1-醇、3-胺基庚烷-4-醇、1-胺基辛烷-2-醇、5-胺基辛烷-4-醇、1-胺基丙烷-2,3-二醇、2-胺基丙烷-1,3-二醇、參(甲氧基)胺基甲烷、1,2-二胺基丙烷-3-醇、1,3-二胺基丙烷-2-醇、2-(2-胺基乙氧基)乙醇等。這些可單獨使用1種,亦可組合使用2種以上。
這些當中,就烷醇胺(A)而言,尤以選自於由2-胺基乙醇(單乙醇胺)及1-胺基-2-丙醇構成之群組中之1種以上較為理想。
烷醇胺(A)之含量,按組成物之全量為基準計係落在2.5~50質量%之範圍內,3~30質量%較為理想,3.5~15質量%更為理想,4~10質量%之範圍內更甚理想。又,本說明書中,可適當地組合數值範圍之上限值及下限值。若烷醇胺(A)之含量落在上述範圍內,可使光阻之除去性變好,又,可抑制含有成為銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案受到損害。
[氫氧化四級銨(B)]
本發明之組成物藉由包含氫氧化四級銨(B)(以下亦稱作成分(B)),可將光阻剝離片予以微細化並抑制光阻之剝離殘渣的發生。
就氫氧化四級銨(B)而言,並不特別限定,可列舉如氫氧化四甲基銨、氫氧化四乙基銨、氫氧化四丙基銨、氫氧化三乙基甲基銨、氫氧化乙基三甲基銨、氫氧化三甲基(2-羥乙基)銨、氫氧化三乙基(2-羥乙基)銨。這些可單獨使用1種,亦可組合使用2種以上。
這些當中尤以選自於由氫氧化四甲基銨、氫氧化四乙基銨、及氫氧化三乙基甲基銨構成之群組中之1種以上較為理想。
氫氧化四級銨(B)之含量,按組成物之全量為基準計係落在0.5~4質量%之範圍內,0.5~3.5質量%較為理想,1~3.5質量%更為理想,落在1~2質量%之範圍內更甚理想。若氫氧化四級銨(B)之含量落在上述範圍,則光阻之除去性會變好,又,可抑制含有成為銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案受到損害。
[糖醇(C)]
本發明之組成物藉由包含糖醇(C)(以下亦稱作成分(C)),可不損及光阻之除去性,且抑制含有成為銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案受到損害。尤其能有效地抑制錫鍍敷受到損害。
就糖醇(C)而言,並不特別限定,較佳可列舉如蘇糖醇、赤蘚醇、核糖醇、阿糖醇、木糖醇、塔羅糖醇、山梨醇、甘露醇、艾杜醇、半乳糖醇、及肌醇。這些可單獨使用1種,亦可組合使用2種以上。
這些當中尤以選自於由山梨醇、木糖醇、及甘露醇構成之群組中之1種以上較為理想,考量抑制選自於由錫及錫合金構成之群組中之至少1種所受之損害的觀點,從山梨醇或木糖醇中選擇至少1種更為理想。
糖醇(C)之含量,按組成物之全量為基準計係落在0.5~20質量%的範圍內,1~20質量%較為理想,2~15質量%更為理想,落在3~10質量%的範圍內更甚理想。若糖醇(C)之含量落在上述範圍內,則光阻之除去性會變好,又,可抑制含有成為銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案所受到之損害。
[極性有機溶劑(D)]
本發明之組成物,據認為藉由包含極性有機溶劑(D)(以下亦稱作成分(D)),會使組成物對光阻的滲透性更好,光阻之除去性會變好,又,可抑制光阻之剝離殘渣的產生。
就極性有機溶劑(D)而言,係使用由乙二醇單乙醚、2-丁氧乙醇、乙二醇單苯基醚(苯氧乙醇)、丙二醇單乙醚、二乙二醇單乙醚、二乙二醇單丁醚、及二乙二醇單苯基醚構成之群組中之1種以上。其中,考量抑制選自於由錫及錫合金構成之群組中之至少1種所受之損害的觀點,尤以乙二醇單苯基醚、二乙二醇單苯基醚較為理想。這些可單獨使用1種,亦可組合使用2種以上。本發明中,藉由使用這些特定的極性有機溶劑,可使光阻之除去性更好。上述以外之極性有機溶劑,例如若極性有機溶劑之烷基醚部分為甲醚的話,則光阻之除去性會降低。
極性有機溶劑(D)之含量,按組成物之全量為基準計係落在0.5~10質量%的範圍內較為理想,1~10質量%的範圍內更為理想,1.5~8質量%更甚理想,落在2~6質量%的範圍內又更甚理想。若極性有機溶劑(D)之含量落在上述範圍內,則光阻之除去性會變好,又,可抑制含有成為銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案所受到之損害。
[水(E)]
本發明之組成物包含水(E)(以下亦稱作成分(E))。就水(E)而言,並無特別限制,藉由蒸餾、離子交換處理、過濾處理、各種吸附處理等將金屬離子、有機雜質、微粒等除去者較為理想,純水更為理想,超純水特別理想。
水(E)的含量係本發明之組成物之殘餘部分,按組成物之全量為基準計,為40質量%以上較為理想,超過40質量%更為理想,落在40~99質量%之範圍內又更為理想,50~97質量%更甚理想,60~95質量%又更甚理想,70~95質量%特別理想。若水之含量落在上述範圍內,則因為烷醇胺(A)及氫氧化四級銨(B)對光阻的反應性會更好,所以可使光阻之除去性更好。水若過少,有時光阻之除去性會降低。
[其他成分]
本發明之組成物,在不妨害本發明之組成物之效果的範圍內亦可視需要含有其他成分。
就其他成分而言,可列舉如界面活性劑、消泡劑等。
因為唑化合物容易吸附在銅上而在藥液處理後殘存於銅表面,所以會在之後的步驟中成為電性連接不良的原因。雖然能藉由酸洗淨、鹼洗淨將唑化合物從銅表面予以除去,但同時錫及錫合金會受到腐蝕。因此,為了防止唑化合物吸附於銅,本發明之組成物係實質上不含有唑化合物。在此,所謂實質上不含有唑化合物,係指按組成物之全量為基準計,唑化合物之含量未達0.01質量%。唑化合物之含量未達0.001質量%更為理想,未達0.0001質量%更甚理想,不含有係特別理想。
本發明之組成物宜對錫及錫合金之損害較小較為理想。例如將本發明之組成物藉由例如噴灑噴霧予以接觸時,選自於由錫及錫合金構成之群組中之至少1種在50℃下的蝕刻速率為0.1μm/分以下較為理想,0.07μm/分以下更為理想,0.05μm/分以下更甚理想,0.03μm/分以下特別理想。上述蝕刻速率能以實施例中記載之方法進行測定。
又,本發明之組成物為溶解液較為理想,係不含有研磨粒子等固體粒子者。
[組成物之製備]
本發明之組成物可藉由將成分(A)、成分(B)、成分(C)、成分(D)、及成分(E)、以及視需要之其他成分均勻地攪拌來製備。這些成分的攪拌方法並無特別限制,可採用一般使用之攪拌方法。
[組成物之用途]
本發明之組成物可理想地使用於將在至少一部分具有銅配線之絕緣層上形成含有成為該銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案用的光阻於該電路圖案形成後予以去除。
在此,所謂「至少一部分具有銅配線之絕緣層」,只要是表面或內部有嵌入銅配線之絕緣層並無特別限定,可列舉如印刷電路板、半導體元件搭載用封裝基板、半導體晶圓之聚矽氧絕緣層等。
又,所謂「上述含有成為銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案」,上述絕緣層具有之銅配線的連接端子部係用於與其他構件進行電性連接者。本發明之一實施態樣中,上述連接端子部係印刷電路板中之銅配線的連接端子部。又,本發明之一實施態樣中,上述連接端子部係半導體元件搭載用封裝基板中之銅配線的連接端子部。又,本發明之一實施態樣中,上述連接端子部係半導體元件中之銅配線的連接端子部。
例如,本發明之組成物在印刷電路板(例如半導體元件搭載用封裝基板)之製造步驟中,可理想地使用於將在至少一部分具有銅配線之絕緣層上形成含有成為該銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案用的光阻於該電路圖案形成後予以去除。
又,本發明之組成物在半導體元件之製造步驟中,可理想地使用於將在至少一部分具有銅配線之絕緣層上形成含有成為該銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案用的光阻於該電路圖案形成後予以去除。
在此,就用於印刷電路板之光阻而言,可列舉如包含黏合聚合物、光聚合性單體、光聚合起始劑及其他添加劑之組成物。
就黏合聚合物而言,可列舉如將甲基丙烯酸及丙烯酸中之至少1種作為必要成分,將甲基丙烯酸酯、丙烯酸酯、苯乙烯等數種乙烯基單體予以共聚合所得者。
就光聚合性單體而言,較佳可列舉如甲基丙烯酸酯及丙烯酸酯中之至少1種。
就光聚合起始劑而言,可列舉如由二苯基酮、4,4’-二胺基二苯基酮、4,4’-雙(二甲基胺基)二苯基酮、2-乙基蒽醌、苯偶姻、苯偶姻甲醚、9-苯基吖啶、苄基二甲基縮酮、苄基二乙基縮酮構成之群組中之至少1種。又,亦可使用由六芳基二咪唑與供氫體(2-巰基苯㗁唑、N-苯基甘胺酸)構成之二分子系統。
就其他添加劑而言,可列舉如熱聚合起始劑、染料等。
就使用於半導體元件之光阻而言,較佳可列舉如酚-甲醛樹脂(總稱為「酚醛清漆樹脂」)與係感光成分之重氮萘醌(naphthoquinonediazide)化合物的組合等。
本發明之組成物之使用溫度並無特別限制,為10~70℃之溫度較為理想,為20~65℃更為理想,為25~60℃更甚理想。若本發明之組成物之溫度為10℃以上,則光阻之除去性會變好,所以可獲得優異之生產效率。另一方面,若本發明之組成物之溫度為70℃以下,則可抑制組成物之組成變化,使光阻之除去條件保持一定。雖藉由使組成物之溫度提高,能使光阻之除去性更好,但在考慮抑制組成物之組成變化使其變小等之後,適當地決定最適合的處理溫度即可。
又,利用本發明之組成物的處理時間並無特別限制,20~600秒較為理想,30~300秒更為理想,亦可為30~240秒。亦可根據係除去對象物之光阻之表面的狀態、組成物的濃度、溫度及處理方法等各種條件來適當地選擇處理時間。
使本發明之組成物接觸光阻的方法並無特別限制。可採用例如藉由滴加(單片旋轉處理)或噴灑噴霧等形式使本發明之組成物接觸係除去對象物之光阻的方法、或將係除去對象物之光阻浸漬於本發明之組成物的方法等方法。本發明中可採用任一者之方法。
2.光阻之除去方法
本發明之光阻之除去方法,包括下列步驟:使本發明之組成物接觸用於將在至少一部分具有銅配線之絕緣層上形成上述含有成為銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案的光阻。
本發明之組成物就使用溫度及處理時間而言,係如上述「1.光阻除去用組成物」中之記載。就使本發明之組成物接觸光阻之方法而言,亦如上述「1.光阻除去用組成物」中之記載。根據本發明之較佳態樣,藉由使用本發明之組成物,可一邊抑制對含有成為銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案的損害,一邊將光阻予以除去。藉此,能以良好的產率在至少一部分具有銅配線之絕緣層上形成上述含有成為銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案。
3.半導體元件搭載用封裝基板之製造方法
本發明之半導體元件搭載用封裝基板之製造方法,係具有含有成為銅配線及該銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案的半導體元件搭載用封裝基板之製造方法,
其特徵為包括以下步驟:
銅層形成步驟,在至少一部分具有銅配線之絕緣層上形成銅層,
抗蝕劑圖案形成步驟,在該銅層之表面形成乾式薄膜抗蝕劑層,並將該乾式薄膜抗蝕劑層進行曝光顯影而形成由光阻構成之抗蝕劑圖案,
電路圖案形成步驟,在該抗蝕劑圖案之開口部實施銅鍍敷,並在該銅鍍敷上實施由錫鍍敷及錫合金鍍敷構成之群組中之至少1種,而形成含有成為該銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案,
光阻去除步驟,在形成該電路圖案後,使本發明之組成物接觸上述前記光阻而將該光阻去除,
銅層去除步驟,在將該光阻去除後,將露出之該銅層去除。
以下,利用圖式針對本發明之半導體元件搭載用封裝基板之製造方法進行說明。
圖1為顯示本發明之一實施態樣之半導體元件搭載用封裝基板之製造方法之步驟之一例之圖。
如圖1(a)所示,首先,準備將銅配線10埋置在層間絕緣樹脂11之間而得之係一部分具有銅配線10之絕緣層的樹脂基板1。
然後,如圖1(b)所示,在樹脂基板1之表面上形成銅層2。銅層2,可在樹脂基板1之表面上實施化學銅鍍敷(無電解銅鍍敷)予以形成,例如Modified Semi-Additive Process(M-SAP)等,亦可使用附載體銅箔之極薄銅箔等來形成銅箔層,亦可藉由濺鍍將銅予以成膜而形成。藉由濺鍍來形成銅層2的時候,雖未圖示,但可在銅層2形成之前先任意地形成鈦層、鎳-鉻合金層等金屬阻隔層,然後再形成銅層2。本發明之半導體元件搭載用封裝基板之製造方法中,藉由化學銅鍍敷來形成銅層2較為理想。
接著,如圖1(c)所示,在銅層2之表面形成乾式薄膜抗蝕劑層3,然後於其上施用未圖示之電路遮罩圖案,並予以曝光顯影,如圖1(d)所示,形成具有銅層2之表面之一部分露出的開口部3a且由光阻3b構成之抗蝕劑圖案。
接著,如圖1(e)所示,在抗蝕劑圖案之開口部3a實施電性銅鍍敷(電解銅鍍敷),形成銅層4。然後,如圖1(f)所示,在銅層4之表面上實施錫鍍敷或錫合金鍍敷而形成錫層或錫合金層5,形成含有成為銅配線10之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案6。或在銅層4之表面上依序實施錫鍍敷及錫合金鍍敷而形成錫層及錫合金層,形成含有成為銅配線10之連接端子部之銅、錫及錫合金之電路圖案亦可。此時錫鍍敷及錫合金鍍敷的順序並無特別限定,可適當地決定。
在形成電路圖案6之後,使本發明之組成物接觸光阻3b,如圖1(g)所示,將光阻3b予以除去。
然後,將露出之銅層2的露出部2a予以除去,如圖1(h)所示,可在樹脂基板1上形成銅配線10之連接端子部7。
以如上方式,可製造具有銅配線及上述含有成為銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案的半導體元件搭載用封裝基板。連接端子部7,可在將半導體元件等零件搭載於半導體元件搭載用封裝基板時使用。
以與本發明之半導體元件搭載用封裝基板之製造方法同樣的作法亦可製造其他印刷電路板,例如亦可製造以加成工法製造之稱作高密度安裝配線板之母板上的連接端子部。
4.半導體元件之製造方法
接著,針對本發明之半導體元件之製造方法進行說明。
本發明之半導體元件之製造方法,係具有銅配線及該含有成為銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案之半導體元件的製造方法,
其特徵為包括以下步驟:
銅層形成步驟,在至少一部分具有銅配線之絕緣層上形成銅層,
抗蝕劑圖案形成步驟,在該銅層之表面形成乾式薄膜抗蝕劑層,並將該乾式薄膜抗蝕劑層進行曝光顯影而形成由光阻構成之抗蝕劑圖案,
電路圖案形成步驟,在該抗蝕劑圖案之開口部實施銅鍍敷,並在該銅鍍敷上實施由錫鍍敷及錫合金鍍敷構成之群組中之至少1種,形成含有成為該銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案,
光阻去除步驟,在形成該電路圖案後,使本發明之組成物接觸該光阻而將該光阻去除,
銅層去除步驟,在將該光阻去除後,將露出之該銅層去除。
圖2為顯示本發明之一實施態樣之半導體元件之製造方法之步驟之一例之圖。
如圖2(a)所示,首先,準備將銅配線10埋置在聚矽氧絕緣層12之間而得之係一部分具有銅配線10之絕緣層的聚矽氧基板1’。
然後,如圖2(b)所示,在聚矽氧基板1’之表面上形成銅層2。銅層2,可在聚矽氧基板1’之表面上實施化學銅鍍敷予以形成,亦可藉由濺鍍將銅予以成膜而形成。本發明之半導體元件之製造方法中,藉由濺鍍將銅予以成膜而形成銅層2較為理想。亦可在銅層2形成之前,先任意地形成鈦層等金屬阻隔層8,然後再形成銅層2,雖未圖示,但亦可在銅層2與金屬阻隔層8之間再形成其他層。鈦層等金屬阻隔層8可例如藉由濺鍍予以成膜而形成。
接著,如圖2(c)所示,在銅層2之表面形成乾式薄膜抗蝕劑層3,然後於其上施用未圖示之電路遮罩圖案,並予以曝光顯影,如圖2(d)所示,形成具有銅層2之表面之一部分露出的開口部3a且由光阻3b構成之抗蝕劑圖案。
接著,如圖2(e)所示,在抗蝕劑圖案之開口部3a實施電性銅鍍敷,形成銅層4。然後,如圖2(f)所示,在銅層4之表面上實施錫鍍敷或錫合金鍍敷,形成錫層或錫合金層5,並形成含有成為銅配線10之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案6。或在銅層4之表面上依序實施錫鍍敷及錫合金鍍敷而形成錫層及錫合金層,並形成含有成為銅配線10之連接端子部之銅、錫及錫合金之電路圖案亦可。此時錫鍍敷及錫合金鍍敷的順序並無特別限定,可適當地決定。
在形成電路圖案6之後,使本發明之組成物接觸光阻3b,如圖2(g)所示,將光阻3b予以除去。
然後,將露出之銅層2的露出部2a予以除去,然後,將因為除去露出部2a而露出之金屬阻隔層8予以除去,如圖2(h)所示,可在聚矽氧基板1’上形成銅配線10之連接端子部7’。之後,可將聚矽氧基板1’以預定的大小予以切斷,作為半導體元件而使用。
以如上方式,可製造具有銅配線及上述含有成為銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案的半導體元件。連接端子部7’,可在將獲得之半導體元件搭載於半導體元件搭載用封裝基板等時候使用。
5.半導體封裝體之製造方法
接著,針對本發明之半導體封裝體之製造方法進行說明。
本發明之半導體封裝體之製造方法,包括介隔著選自於由錫及錫合金構成之群組中之至少1種將半導體元件搭載用封裝基板與半導體元件予以電性連接之步驟,
該半導體元件搭載用封裝基板及該半導體元件中之至少一者,具有含有成為連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種的電路圖案,
當該半導體元件搭載用封裝基板具有含有銅以及選自於由錫及錫合金構成之群組中之至少1種的電路圖案的時候,根據上述半導體元件搭載用封裝基板之製造方法來製造具有含有銅以及選自於由錫及錫合金構成之群組中之至少1種的電路圖案的半導體元件搭載用封裝基板,
當該半導體元件具有含有銅以及選自於由錫及錫合金構成之群組中之至少1種的電路圖案的時候,根據上述半導體元件之製造方法來製造具有含有銅以及選自於由錫及錫合金構成之群組中之至少1種的電路圖案的半導體元件,
其特徵為包括以下步驟:
將該半導體元件搭載用封裝基板及該半導體元件以各自之連接部面對的方式配置,並加熱到選自於由錫及錫合金構成之群組中之至少1種會熔融的溫度,而使半導體元件搭載用封裝基板與半導體元件介隔著選自於由錫及錫合金構成之群組中之至少1種而電性連接。
本發明之半導體封裝體之製造方法中,半導體元件搭載用封裝基板及半導體元件中之任一者或兩者,具有含有成為連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種的電路圖案。又,藉由將上述半導體元件搭載用封裝基板及上述半導體元件以各自之連接部面對的方式配置,並加熱到具有電路圖案之選自於由錫及錫合金構成之群組中之至少1種會熔融的溫度,可使半導體元件搭載用封裝基板與半導體元件介隔著選自於由錫及錫合金構成之群組中之至少1種而電性連接。
這時候的加熱溫度,只要是選自於由錫及錫合金構成之群組中之至少1種會熔融的溫度並不特別限定,考量使半導體元件搭載用封裝基板與半導體元件的電性連接良好並防止它們受到損傷的觀點,通常為180~280℃,180~260℃較為理想,180~240℃更為理想。
如上述,本發明之半導體封裝體之製造方法中,若所欲連接之半導體元件搭載用封裝基板與半導體元件中之至少一者具有含有成為連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種的電路圖案,則可使半導體元件搭載用封裝基板與半導體元件介隔著選自於由錫及錫合金構成之群組中之至少1種而電性連接。對比於習知的利用將焊球、焊料糊劑直接塗佈於連接構件來進行半導體元件搭載用封裝基板與半導體元件間的電性連接的情況,藉由本發明之較佳態樣可輕易地控制電性連接,即使是對於電子設備之配線之高密度化及小型化的要求亦能因應。
又,本發明之一實施態樣中,半導體元件搭載用封裝基板及半導體元件中之至少一者具有之含有成為連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案的錫層或錫合金層的上方,亦可再配置焊球、焊料糊劑等接合劑將電性連接予以強化。對比於將這些接合劑直接塗佈於連接構件的情況,藉由介隔著連接端子部而配置焊球、焊料糊劑等接合劑,會使控制電性連接變容易。
將半導體元件搭載用封裝基板與半導體元件予以電性連接之後,為了確保電性連接強度及機械連接強度而注入密封樹脂將半導體元件搭載用封裝基板與半導體元件間的間隙予以密封較為理想。
[實施例]
以下,根據實施例對本發明做具體說明,但只要能發揮本發明之效果便可適當地變更實施形態。
[實施例1~28]
以表1記載之組成,將成分(A)、成分(B)、成分(C)、成分(D)、成分(E)及其他任意成分投入容量1L之玻璃燒杯中,將其攪拌成均勻的狀態來製備水性組成物。
[比較例1~16]
除了改成表2記載之組成以外,係與上述實施例同樣地製備水性組成物。
[光阻除去性評價用試樣之製備]
在絕緣層(Ajinomoto Fine-Techno(股)公司製之「ABF-GX-92」)上實施化學銅鍍敷(上村工業(股)公司製之「THRU-CUP PEAver.2」)將銅薄膜(厚度:0.8μm)予以製膜。使乾式薄膜抗蝕劑(日立化成(股)公司製之「RD-1225」、厚度:25μm)附著於此銅薄膜之表面,於其上施用電路遮罩圖案,並進行曝光顯影。在將乾式薄膜抗蝕劑進行曝光顯影所形成之電路圖案開口部上實施電性銅鍍敷(厚度:20μm),獲得光阻除去性評價用試樣。
[錫抗蝕性評價用試樣之製備]
在覆銅箔疊層板(三菱瓦斯化學(股)公司製之「CCL-HL832HS 12/12HS-L」)之表面上實施石原化學(股)公司製之錫鍍敷(厚度:10μm),獲得錫抗蝕性評價用試樣。
<評價方法>
使具有表1或2之組成的水性組成物以噴灑壓力0.15MPa、50℃、3分鐘噴灑噴霧而分別接觸光阻除去性評價用試樣及錫抗蝕性評價用試樣。
光阻除去性能,係使用光學顯微鏡「OLYMPUS MX-61L 50倍接物透鏡」,對光阻除去性評價用試樣之光阻除去的程度進行確認。
<光阻除去性評價基準>
A:光阻全部除去。
B:殘留部分光阻。
C:光阻完全無法除去。
<錫抗蝕性評價>
錫抗蝕性評價,係測定處理前後之試樣質量,由其質量差、錫之密度(7.37g/cm3
)、及試樣尺寸(處理面積[m2
],又,因為試樣之背面係以遮蔽膠帶進行保護,所以處理面積係試樣表面之面積。)來算出蝕刻之厚度,再根據下式求得每1分鐘之蝕刻量(錫之蝕刻速率)。
錫之蝕刻速率[μm/min]=(處理前試樣質量[g]-處理後試樣質量[g])/{(處理面積[m2
]×7.37[g/cm3
](錫之密度)×處理時間[min])}
蝕刻速率在0.1μm/分以下為合格,0.05μm/分以下為特別優異。
結果各自顯示於表1及2。
[表1]
PhGE:苯氧乙醇=2-苯氧基乙醇=乙二醇單苯基醚
EDG:二乙二醇單乙醚
DGBE:二乙二醇單丁醚
組成[質量%] | Sn蝕刻速率 [μm/min] | 乾式薄膜抗蝕劑除去性 | ||||||||
烷醇胺(A) | 氫氧化四甲基銨(B) | 糖醇(C) | 極性有機溶劑(D) | 水(E) | ||||||
實施例1 | 2-胺基乙醇 | 5 | 1 | 山梨醇 | 4 | PhGE | 2.5 | 87.5 | 0.01 | A |
實施例2 | 2-胺基乙醇 | 10 | 1.5 | 山梨醇 | 4 | PhGE | 2.5 | 82 | 0.01 | A |
實施例3 | 2-胺基乙醇 | 20 | 1.5 | 山梨醇 | 4 | PhGE | 4 | 70.5 | 0.01 | A |
實施例4 | 2-胺基乙醇 | 8.8 | 3.3 | 山梨醇 | 4 | PhGE | 3.1 | 80.9 | 0.04 | A |
實施例5 | 2-胺基乙醇 | 8.8 | 3.3 | 山梨醇 | 2 | PhGE | 4.4 | 81.6 | 0.05 | A |
實施例6 | 2-胺基乙醇 | 3 | 3.3 | 山梨醇 | 4 | PhGE | 2.5 | 87.2 | 0.01 | A |
實施例7 | 2-胺基乙醇 | 4 | 3.3 | 山梨醇 | 4 | PhGE | 2.5 | 86.2 | 0.01 | A |
實施例8 | 2-胺基乙醇 | 6 | 1.5 | 山梨醇 | 2.5 | PhGE | 5 | 85 | 0.01 | A |
實施例9 | 2-胺基乙醇 | 5 | 1 | 山梨醇 | 15 | PhGE | 2.5 | 76.5 | 0.01 | A |
實施例10 | 2-胺基乙醇 | 5 | 1 | 山梨醇 | 1 | PhGE | 2.5 | 90.5 | 0.02 | A |
實施例11 | 2-胺基乙醇 | 5 | 1.5 | 山梨醇 | 0.5 | PhGE | 2.5 | 90.5 | 0.07 | A |
實施例12 | 2-胺基乙醇 | 10 | 1 | 山梨醇 | 4 | PhGE | 2.5 | 82.5 | 0.03 | A |
實施例13 | 2-胺基乙醇 | 6 | 1.5 | 木糖醇 | 4 | PhGE | 2.5 | 86 | 0.01 | A |
實施例14 | 2-胺基乙醇 | 6 | 1.5 | 甘露醇 | 4 | PhGE | 2.5 | 86 | 0.05 | A |
實施例15 | 1-胺基-2-丙醇 | 6 | 1.5 | 山梨醇 | 4 | PhGE | 2.5 | 86 | 0.02 | A |
實施例16 | 2-胺基乙醇 | 30 | 1.5 | 山梨醇 | 4 | PhGE | 4 | 60.5 | 0.01 | A |
實施例17 | 2-胺基乙醇 | 30 | 4 | 山梨醇 | 4 | PhGE | 4 | 58 | 0.01 | A |
實施例18 | 2-胺基乙醇 | 50 | 1.5 | 山梨醇 | 4 | PhGE | 4 | 40.5 | 0.02 | A |
實施例19 | 2-胺基乙醇 | 30 | 4 | 山梨醇 | 1 | PhGE | 4 | 61 | 0.04 | A |
實施例20 | 2-胺基乙醇 | 50 | 4 | 山梨醇 | 1 | PhGE | 2.5 | 42.5 | 0.05 | A |
實施例21 | 2-胺基乙醇 | 30 | 1.5 | 山梨醇 | 0.5 | PhGE | 2.5 | 65.5 | 0.02 | A |
實施例22 | 2-胺基乙醇 | 30 | 4 | 山梨醇 | 0.5 | PhGE | 2.5 | 63 | 0.01 | A |
實施例23 | 2-胺基乙醇 | 6 | 1.5 | 山梨醇 | 2.5 | EDG | 5 | 85 | 0.01 | A |
實施例24 | 2-胺基乙醇 | 6 | 1.5 | 山梨醇 | 2.5 | DGBE | 5 | 85 | 0.04 | A |
實施例25 | 2-胺基乙醇 | 6 | 1.5 | 山梨醇 | 2.5 | 2-丁氧乙醇 | 5 | 85 | 0.04 | A |
實施例26 | 2-胺基乙醇 | 6 | 1.5 | 山梨醇 | 2.5 | 丙二醇單乙醚 | 5 | 85 | 0.02 | A |
實施例27 | 2-胺基乙醇 | 6 | 1.5 | 山梨醇 | 2.5 | 二乙二醇單苯基醚 | 5 | 85 | 0.01 | A |
實施例28 | 2-胺基乙醇 | 6 | 1.5 | 山梨醇 | 2.5 | 乙二醇單乙醚 | 5 | 85 | 0.02 | A |
[表2]
PhGE:苯氧乙醇=2-苯氧基乙醇=乙二醇單苯基醚
DGME:二乙二醇單甲醚
DMSO:二甲基亞碸
NMP:N-甲基-2-吡咯烷酮=1-甲基-2-吡咯烷酮
MFDG:二丙二醇單甲醚
組成[質量%] | Sn蝕刻速率[μm/min] | 乾式薄膜抗蝕劑除去性 | ||||||||
烷醇胺(A) | 氫氧化四甲基銨(B) | 糖醇(C) | 極性有機溶劑(D) | 水(E) | ||||||
比較例1 | - | 0 | 1.5 | 山梨醇 | 4 | PhGE | 2.5 | 92 | 0.02 | C |
比較例2 | 2-胺基乙醇 | 6 | 0 | 山梨醇 | 4 | PhGE | 2.5 | 87.5 | 0.01 | C |
比較例3 | 2-胺基乙醇 | 6 | 1.5 | - | 0 | PhGE | 2.5 | 90 | 0.19 | A |
比較例4 | 2-胺基乙醇 | 6 | 1.5 | 山梨醇 | 4 | - | 0 | 88.5 | 0.01 | C |
比較例5 | 2-胺基乙醇 | 5.5 | 1 | - | 0 | - | 0 | 93.5 | 0.26 | A |
比較例6 | 2-胺基乙醇 | 8 | 4.5 | 山梨醇 | 4 | PhGE | 4 | 79.5 | 0.15 | A |
比較例7 | 2-胺基乙醇 | 2 | 3.3 | 山梨醇 | 4 | PhGE | 2.5 | 88.2 | 0.01 | B |
比較例8 | 2-胺基乙醇 | 35 | 3 | 山梨醇 | 10 | DGME | 20 | 32 | 0.02 | C |
比較例9 | 2-胺基乙醇 | 9.97 | 0.24 | 山梨醇 | 0.4 | DMSO | 79.76 | 9.63 | 0.01 | C |
比較例10 | 2-胺基乙醇 | 30 | 1 | 山梨醇 | 5 | NMP | 50 | 14 | 0.19 | A |
比較例11 | 2-胺基乙醇 | 25 | 5 | 山梨醇 | 10 | DGME | 20 | 40 | 0.02 | B |
比較例12 | 2-胺基乙醇 | 6 | 1.5 | 山梨醇 | 2.5 | DGME | 5 | 85 | 0.03 | C |
比較例13 | 2-胺基乙醇 | 6 | 1.5 | 木糖醇 | 2.5 | MFDG | 5 | 85 | 0.03 | B |
比較例14 | 2-胺基乙醇 | 6 | 1.5 | 甘露醇 | 2.5 | 乙二醇單甲醚 | 5 | 85 | 0.05 | B |
比較例15 | 2-胺基乙醇 | 6 | 1.5 | 山梨醇 | 2.5 | 二乙二醇二甲醚 | 5 | 85 | 0.05 | B |
比較例16 | 2-胺基乙醇 | 6 | 1.5 | 山梨醇 | 2.5 | 丙二醇單甲醚 | 5 | 85 | 0.03 | B |
如表1所示,實施例1~28之水性組成物中皆為光阻全部除去且錫抗蝕性亦良好。
另一方面,如表2所示,比較例1~16之水性組成物中皆為光阻之除去性不充分,或錫抗蝕性不充分。
1:樹脂基板
1’:聚矽氧基板
2:銅層
2a:露出部
3:乾式薄膜抗蝕劑
3a:開口部
3b:光阻
4:銅層
5:錫層或錫合金層
6:電路圖案
7:連接端子部
7’:連接端子部
8:金屬阻隔層
10:銅配線
11:層間絕緣樹脂
12:聚矽氧絕緣層
[圖1](a)~(h)為顯示係本發明之一實施態樣之半導體元件搭載用封裝基板之製造方法之步驟之一例之圖。
[圖2](a)~(h)為顯示本發明之一實施態樣之半導體元件之製造方法之步驟之一例之圖。
Claims (14)
- 一種組成物,係用於將在至少一部分具有銅配線之絕緣層上形成含有成為該銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案用的光阻於該電路圖案形成後予以去除, 含有烷醇胺(A)、氫氧化四級銨(B)、糖醇(C)、極性有機溶劑(D)及水(E), 按組成物之全量為基準計,鏈烷醇胺(A)之含量為2.5~50質量%,氫氧化四級銨(B)之含量為0.5~4質量%,糖醇(C)之含量為0.5~20質量%, 極性有機溶劑(D)係選自於由乙二醇單乙醚、2-丁氧乙醇、苯氧乙醇(phenyl glycol)、丙二醇單乙醚、二乙二醇單乙醚、二乙二醇單丁醚、及二乙二醇單苯基醚構成之群組中之1種以上, 該組成物實質上不含有唑化合物。
- 如請求項1之組成物,其中,選自於由錫及錫合金構成之群組中之至少1種之在50℃時的蝕刻速率為0.1μm/分以下。
- 如請求項1或2之組成物,其中,水(E)之含量按組成物之全量為基準計,係40質量%以上。
- 如請求項1至3中任一項之組成物,其中,極性有機溶劑(D)之含量,按組成物之全量為基準計,係0.5~10質量%。
- 如請求項1至4中任一項之組成物,其中,極性有機溶劑(D)係選自於由苯氧乙醇及二乙二醇單苯基醚構成之群組中之1種以上。
- 如請求項1至5中任一項之組成物,其中,糖醇(C)係選自於由山梨醇、木糖醇、及甘露醇構成之群組中之1種以上。
- 如請求項1至6中任一項之組成物,其中,氫氧化四級銨(B)係選自於由氫氧化四甲基銨、氫氧化四乙基銨、及氫氧化三乙基甲基銨構成之群組中之1種以上。
- 如請求項1至7中任一項之組成物,其中,烷醇胺(A)係選自於由2-胺基乙醇(單乙醇胺)及1-胺基-2-丙醇構成之群組中之1種以上。
- 如請求項1至8中任一項之組成物,其中,該連接端子部係印刷電路板中之銅配線的連接端子部。
- 如請求項1至8中任一項之組成物,其中,該連接端子部係半導體元件搭載用封裝基板或半導體元件中之銅配線的連接端子部。
- 一種光阻之除去方法,包括使如請求項1至10中任一項之組成物接觸在至少一部分具有銅配線之絕緣層上形成含有成為該銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案用的光阻之步驟。
- 一種半導體元件搭載用封裝基板之製造方法,係具有含有成為銅配線及該銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案的半導體元件搭載用封裝基板之製造方法, 包括以下步驟: 銅層形成步驟,在至少一部分具有銅配線之絕緣層上形成銅層, 抗蝕劑圖案形成步驟,在該銅層之表面形成乾式薄膜抗蝕劑層,並將該乾式薄膜抗蝕劑層進行曝光顯影而形成由光阻構成之抗蝕劑圖案, 電路圖案形成步驟,在該抗蝕劑圖案之開口部實施銅鍍敷,並在該銅鍍敷上實施由錫鍍敷及錫合金鍍敷構成之群組中之至少1種,而形成含有成為該銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案, 光阻去除步驟,在形成該電路圖案後,使如請求項1至10中任一項之組成物接觸該光阻而將該光阻去除, 銅層去除步驟,在將該光阻去除後,將露出之該銅層去除。
- 一種半導體元件之製造方法,係具有含有成為銅配線及該銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案的半導體元件之製造方法, 包括以下步驟: 銅層形成步驟,在至少一部分具有銅配線之絕緣層上形成銅層, 抗蝕劑圖案形成步驟,在該銅層之表面形成乾式薄膜抗蝕劑層,並將該乾式薄膜抗蝕劑層進行曝光顯影而形成由光阻構成之抗蝕劑圖案, 電路圖案形成步驟,在該抗蝕劑圖案之開口部實施銅鍍敷,並在該銅鍍敷上實施由錫鍍敷及錫合金鍍敷構成之群組中之至少1種,形成含有成為該銅配線之連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種之電路圖案, 光阻去除步驟,在形成該電路圖案後,使如請求項1至10中任一項之組成物接觸該光阻而將該光阻去除, 銅層去除步驟,在將該光阻去除後,將露出之該銅層去除。
- 一種半導體封裝體之製造方法,係包括介隔著選自於由錫及錫合金構成之群組中之至少1種將半導體元件搭載用封裝基板與半導體元件予以電性連接之步驟的半導體封裝體之製造方法, 該半導體元件搭載用封裝基板及該半導體元件中之至少一者,具有含有成為連接端子部之銅以及選自於由錫及錫合金構成之群組中之至少1種的電路圖案, 當該半導體元件搭載用封裝基板具有含有銅以及選自於由錫及錫合金構成之群組中之至少1種的電路圖案的時候,根據如請求項12之半導體元件搭載用封裝基板之製造方法來製造具有含有銅以及選自於由錫及錫合金構成之群組中之至少1種的電路圖案的半導體元件搭載用封裝基板, 當該半導體元件具有含有銅以及選自於由錫及錫合金構成之群組中之至少1種的電路圖案的時候,根據如請求項13之半導體元件之製造方法來製造具有含有銅以及選自於由錫及錫合金構成之群組中之至少1種的電路圖案的半導體元件, 且包括以下步驟: 將該半導體元件搭載用封裝基板及該半導體元件以各自之連接部面對的方式配置,並加熱到選自於由錫及錫合金構成之群組中之至少1種會熔融的溫度,而使半導體元件搭載用封裝基板與半導體元件介隔著選自於由錫及錫合金構成之群組中之至少1種而電性連接。
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