JP5848297B2 - 電気デバイス - Google Patents
電気デバイス Download PDFInfo
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- JP5848297B2 JP5848297B2 JP2013185188A JP2013185188A JP5848297B2 JP 5848297 B2 JP5848297 B2 JP 5848297B2 JP 2013185188 A JP2013185188 A JP 2013185188A JP 2013185188 A JP2013185188 A JP 2013185188A JP 5848297 B2 JP5848297 B2 JP 5848297B2
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- 238000000034 method Methods 0.000 claims description 38
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 21
- 229920005591 polysilicon Polymers 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 12
- 230000001419 dependent effect Effects 0.000 claims description 10
- 238000002955 isolation Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000000926 separation method Methods 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 2
- 230000010355 oscillation Effects 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 239000002131 composite material Substances 0.000 description 36
- 239000000758 substrate Substances 0.000 description 23
- 239000003990 capacitor Substances 0.000 description 12
- 230000010354 integration Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000004891 communication Methods 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- 229920000729 poly(L-lysine) polymer Polymers 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
- H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
- H03B5/1246—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance
- H03B5/1253—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance the transistors being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/354—Astable circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/006—Functional aspects of oscillators
- H03B2200/0098—Functional aspects of oscillators having a balanced output signal
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
Description
接続は、ソース電極37およびドレイン電極38を用い、ソース領域33およびドレイン領域34のそれぞれに対し行われる。バラクタ30の第2電極CBは、ゲート電極39を用い、ゲート36に接続される。
Claims (10)
- 入力電圧(V freq )の印加のための入力端子と、前記入力電圧に依存する周波数を有する振動信号(I out )の出力のための出力端子と、を有する電圧制御発振器(VCO)を製造するための方法であって、
前記VCOは、可変周波数の信号を制御するための容量ダイナミックレンジを提供する、第1電極と第2電極との間に電圧依存キャパシタンスを有するバラクタ、を含み:
前記バラクタは、一連のプロセスステップで形成されて均一な特性を有する、電圧依存キャパシタンスを有する少なくとも2つの並列に接続された電気デバイスを備え;
前記電気デバイスは:
第1領域の半導体材料と、
前記第1領域内に形成された第2領域および第3領域の半導体材料であって、前記第2領域および第3領域が分離領域により分離されている、前記第2領域および第3領域の半導体材料と、
前記第1領域の少なくとも前記分離領域に対応する領域上に形成された電気絶縁層と、
前記絶縁層の少なくとも前記分離領域に対応する領域上に形成された導電素子であって、前記絶縁層が、前記導電素子を、前記第1、第2、および第3領域から電気的に絶縁する前記導電素子と、
前記導電素子に接続された前記第1電極と、
前記第2領域および第3領域に接続された前記第2電極と、
を含む前記電気デバイスであり;
前記第2領域と、前記第3領域と、前記導電素子とが、MOSトランジスタのドレインと、ソースと、ゲートと、をそれぞれ構成し;
動作中に前記分離領域内に電圧依存空乏層が形成されるように、及び、対応する前記電圧依存空乏層の容量によって前記容量ダイナミックレンジが獲得されるように、前記ドレイン及びソース領域と前記導電素子とが形成され;
前記ゲートの長さは2μmより小さく;
前記一連のプロセスステップは、前記少なくとも2つの電気デバイスの前記第1領域の全体を1回で形成するステップと、前記第1領域を主表面において軽度にドーピングするステップと、前記少なくとも2つの電気デバイスの前記ゲートを並列的に形成するステップと、前記少なくとも2つの電気デバイスの前記ソース及び前記ドレインを並列的に形成するステップと、を含み、
前記少なくとも2つの電気デバイスの前記第1領域の前記分離領域が全体として前記均一な特性を有し、
前記方法は、前記入力電圧(V freq )を前記電気デバイスの前記第2電極へ接続すること、をさらに含む、
方法。 - 前記導電素子は、ポリシリコンによって前記第1電極と接続される、請求項1に記載の方法。
- 前記ドレインおよびソースは、櫛形のフィンガの形状を形成する、請求項1に記載の方法。
- 前記MOSトランジスタは、マトリックス状に配置される、請求項1又は請求項2に記載の方法。
- 前記ゲートの長さが1μmである、請求項4に記載の方法。
- 前記導電素子が金属シリサイドを含む、請求項1又は請求項2に記載の方法。
- 前記ゲートの幅が5μmより小さい、請求項1又は請求項2に記載の方法。
- 前記ゲートの幅が20μmより小さい、請求項1又は請求項2に記載の方法。
- 前記ゲートの長さのプロセス寸法に対する比は、8より小さい、請求項1〜8のいずれかに記載の方法。
- 電圧制御発振器(VCO)を用いる位相同期ループ回路を製造するための方法であって、請求項1〜9のいずれかに記載の方法に従って前記VCOを製造することを含む、方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9703295-7 | 1997-09-11 | ||
SE9703295A SE515783C2 (sv) | 1997-09-11 | 1997-09-11 | Elektriska anordningar jämte förfarande för deras tillverkning |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011161985A Division JP2012028782A (ja) | 1997-09-11 | 2011-07-25 | 電気デバイス |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014039043A JP2014039043A (ja) | 2014-02-27 |
JP5848297B2 true JP5848297B2 (ja) | 2016-01-27 |
Family
ID=20408227
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000511198A Pending JP2001516955A (ja) | 1997-09-11 | 1998-09-01 | 電気デバイスおよびその製造方法 |
JP2011161985A Pending JP2012028782A (ja) | 1997-09-11 | 2011-07-25 | 電気デバイス |
JP2013185188A Expired - Lifetime JP5848297B2 (ja) | 1997-09-11 | 2013-09-06 | 電気デバイス |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000511198A Pending JP2001516955A (ja) | 1997-09-11 | 1998-09-01 | 電気デバイスおよびその製造方法 |
JP2011161985A Pending JP2012028782A (ja) | 1997-09-11 | 2011-07-25 | 電気デバイス |
Country Status (13)
Country | Link |
---|---|
US (1) | US6100770A (ja) |
JP (3) | JP2001516955A (ja) |
KR (1) | KR100552916B1 (ja) |
CN (2) | CN100342553C (ja) |
AR (1) | AR017100A1 (ja) |
AU (1) | AU741339B2 (ja) |
BR (1) | BRPI9811639B1 (ja) |
EE (1) | EE200000047A (ja) |
IL (3) | IL134416A (ja) |
MY (1) | MY115602A (ja) |
SE (1) | SE515783C2 (ja) |
TR (1) | TR200000511T2 (ja) |
WO (1) | WO1999013514A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11524222B2 (en) | 2018-11-21 | 2022-12-13 | Hanayama International Trading Limited | Polyhedral toy |
Families Citing this family (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6320474B1 (en) * | 1998-12-28 | 2001-11-20 | Interchip Corporation | MOS-type capacitor and integrated circuit VCO using same |
US6369671B1 (en) * | 1999-03-30 | 2002-04-09 | International Business Machines Corporation | Voltage controlled transmission line with real-time adaptive control |
US6271733B1 (en) * | 1999-12-13 | 2001-08-07 | Agere Systems Guardian Corp. | Integrated oscillator circuit with a memory based frequency control circuit and associated methods |
US6407412B1 (en) * | 2000-03-10 | 2002-06-18 | Pmc-Sierra Inc. | MOS varactor structure with engineered voltage control range |
US7000119B1 (en) | 2000-04-20 | 2006-02-14 | Realnetworks, Inc. | Instruction/data protection employing derived obscuring instruction/data |
US6504443B1 (en) | 2000-05-17 | 2003-01-07 | Nec America, Inc., | Common anode varactor tuned LC circuit |
US6642607B2 (en) | 2001-02-05 | 2003-11-04 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
US6621362B2 (en) | 2001-05-18 | 2003-09-16 | Broadcom Corporation | Varactor based differential VCO band switching |
DE10126328A1 (de) * | 2001-05-30 | 2002-12-12 | Infineon Technologies Ag | Integrierte, abstimmbare Kapazität |
KR100530739B1 (ko) * | 2001-06-28 | 2005-11-28 | 한국전자통신연구원 | 가변 수동소자 및 그 제조방법 |
US7235862B2 (en) * | 2001-07-10 | 2007-06-26 | National Semiconductor Corporation | Gate-enhanced junction varactor |
DE10139396A1 (de) * | 2001-08-10 | 2003-01-16 | Infineon Technologies Ag | Integrierte Halbleiterschaltung mit einem Varaktor |
US6667539B2 (en) | 2001-11-08 | 2003-12-23 | International Business Machines Corporation | Method to increase the tuning voltage range of MOS varactors |
US6521506B1 (en) | 2001-12-13 | 2003-02-18 | International Business Machines Corporation | Varactors for CMOS and BiCMOS technologies |
US6828654B2 (en) * | 2001-12-27 | 2004-12-07 | Broadcom Corporation | Thick oxide P-gate NMOS capacitor for use in a phase-locked loop circuit and method of making same |
US7169679B2 (en) * | 2002-01-07 | 2007-01-30 | Honeywell International Inc. | Varactor with improved tuning range |
US7081663B2 (en) | 2002-01-18 | 2006-07-25 | National Semiconductor Corporation | Gate-enhanced junction varactor with gradual capacitance variation |
DE10206375A1 (de) * | 2002-02-15 | 2003-06-26 | Infineon Technologies Ag | Integrierte, abstimmbare Kapazität |
JP4153233B2 (ja) * | 2002-04-18 | 2008-09-24 | 富士通株式会社 | pnバラクタ |
DE10222764B4 (de) * | 2002-05-15 | 2011-06-01 | Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik | Halbleitervaraktor und damit aufgebauter Oszillator |
US6608362B1 (en) | 2002-08-20 | 2003-08-19 | Chartered Semiconductor Manufacturing Ltd. | Method and device for reducing capacitive and magnetic effects from a substrate by using a schottky diode under passive components |
KR100460273B1 (ko) * | 2003-03-25 | 2004-12-08 | 매그나칩 반도체 유한회사 | 모스 바랙터의 제조방법 |
JP4046634B2 (ja) | 2003-04-08 | 2008-02-13 | Necエレクトロニクス株式会社 | 電圧制御型容量素子及び半導体集積回路 |
JP2004311858A (ja) * | 2003-04-10 | 2004-11-04 | Nec Electronics Corp | 半導体集積回路装置 |
US6825089B1 (en) * | 2003-06-04 | 2004-11-30 | Agere Systems Inc. | Increased quality factor of a varactor in an integrated circuit via a high conductive region in a well |
JP2005019487A (ja) | 2003-06-24 | 2005-01-20 | Nippon Precision Circuits Inc | Mos型可変容量素子及び電圧制御発振回路 |
US7075379B2 (en) * | 2003-07-23 | 2006-07-11 | Agency For Science, Technology And Research | Low supply-sensitive and wide tuning-range CMOS LC-tank voltage-controlled oscillator monolithic integrated circuit |
TWI373925B (en) * | 2004-02-10 | 2012-10-01 | Tridev Res L L C | Tunable resonant circuit, tunable voltage controlled oscillator circuit, tunable low noise amplifier circuit and method of tuning a resonant circuit |
US7038527B2 (en) * | 2004-02-25 | 2006-05-02 | Analog Devices, Inc. | MOS varactor for LC VCOs |
SE527215C2 (sv) * | 2004-03-23 | 2006-01-24 | Infineon Technologies Ag | Integrerad omkopplingsanordning |
CN100353568C (zh) * | 2004-04-07 | 2007-12-05 | 联华电子股份有限公司 | 可变电容器与差动式可变电容器 |
JP4857531B2 (ja) * | 2004-07-08 | 2012-01-18 | 三菱電機株式会社 | 半導体装置 |
JP2006066897A (ja) * | 2004-07-30 | 2006-03-09 | Semiconductor Energy Lab Co Ltd | 容量素子及び半導体装置 |
EP1633005A1 (en) * | 2004-09-03 | 2006-03-08 | Infineon Technologies AG | Monolithically integrated capacitor |
WO2006031777A2 (en) * | 2004-09-10 | 2006-03-23 | University Of Florida Research Foundation, Inc. | Capacitive circuit element and method of using the same |
US20060125012A1 (en) * | 2004-12-09 | 2006-06-15 | Honeywell International Inc. | Varactor |
US7323948B2 (en) * | 2005-08-23 | 2008-01-29 | International Business Machines Corporation | Vertical LC tank device |
DE102005061683B4 (de) * | 2005-12-21 | 2011-12-08 | Forschungsverbund Berlin E.V. | Vorrichtung, Tastkopf und Verfahren zur galvanisch entkoppelten Übertragung eines Messsignals |
US20080149983A1 (en) * | 2006-12-20 | 2008-06-26 | International Business Machines Corporation | Metal-oxide-semiconductor (mos) varactors and methods of forming mos varactors |
US7825441B2 (en) | 2007-06-25 | 2010-11-02 | International Business Machines Corporation | Junction field effect transistor with a hyperabrupt junction |
US8130051B2 (en) * | 2008-02-06 | 2012-03-06 | Broadcom Corporation | Method and system for varactor linearization |
US8008748B2 (en) * | 2008-12-23 | 2011-08-30 | International Business Machines Corporation | Deep trench varactors |
CN101924142B (zh) * | 2009-06-17 | 2011-09-14 | 中国科学院微电子研究所 | 一种GaAs肖特基变容二极管及其制作方法 |
US9236466B1 (en) | 2011-10-07 | 2016-01-12 | Mie Fujitsu Semiconductor Limited | Analog circuits having improved insulated gate transistors, and methods therefor |
US8779861B2 (en) * | 2011-10-19 | 2014-07-15 | Newport Media, Inc. | Multi-phase voltage controlled oscillator using capacitance degenerated single ended transconductance stage and inductance/capacitance load |
US9299699B2 (en) | 2013-03-13 | 2016-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-gate and complementary varactors in FinFET process |
US9847433B2 (en) * | 2014-05-30 | 2017-12-19 | Interchip Corporation | Integrated MOS varicap, and voltage controlled oscillator and filter having same |
CN107112283B (zh) * | 2014-12-24 | 2021-03-16 | 英特尔公司 | 具有增大的调谐范围的cmos变容二极管 |
US9837555B2 (en) | 2015-04-15 | 2017-12-05 | Futurewei Technologies, Inc. | Apparatus and method for a low loss coupling capacitor |
KR102345676B1 (ko) * | 2015-09-09 | 2021-12-31 | 에스케이하이닉스 주식회사 | 모스 버렉터 및 이를 포함하는 반도체 집적소자 |
US10608123B2 (en) * | 2017-05-08 | 2020-03-31 | Qualcomm Incorporated | Metal oxide semiconductor varactor quality factor enhancement |
KR20200058192A (ko) | 2018-11-19 | 2020-05-27 | 이용재 | 압력 밸런스 기능을 갖는 가스용기 밸브 |
US11515434B2 (en) * | 2019-09-17 | 2022-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Decoupling capacitor and method of making the same |
KR20210132026A (ko) * | 2020-04-22 | 2021-11-03 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 가변 커패시터 |
Family Cites Families (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3878482A (en) * | 1973-10-04 | 1975-04-15 | Gen Electric | Wide-band, voltage controlled oscillator utilizing complimentary metal oxide semiconductor integrated circuits and a constant current MOS-FET field effect transistor |
US3904988A (en) * | 1974-09-11 | 1975-09-09 | Motorola Inc | CMOS voltage controlled oscillator |
JPS53139959A (en) * | 1977-05-13 | 1978-12-06 | Hitachi Ltd | Amplifying circuit |
JPS5530862A (en) * | 1978-08-25 | 1980-03-04 | Seiko Instr & Electronics Ltd | Method of making semiconductor device |
DE2915134A1 (de) * | 1979-04-12 | 1980-10-16 | Siemens Ag | Steuerbare oszillatoranordnung |
JPS57113264A (en) * | 1980-12-29 | 1982-07-14 | Fujitsu Ltd | Manufacture of mis type capacitor |
GB2104725B (en) * | 1981-07-17 | 1986-04-09 | Clarion Co Ltd | Variable capacitance device |
US4450416A (en) * | 1981-08-17 | 1984-05-22 | General Electric Company | Voltage controlled oscillator |
JPS5923569A (ja) * | 1982-07-29 | 1984-02-07 | Matsushita Electronics Corp | 半導体可変容量素子 |
JPS59104180A (ja) * | 1982-12-06 | 1984-06-15 | Clarion Co Ltd | 可変容量ダイオ−ド |
JPS59154077A (ja) * | 1983-02-23 | 1984-09-03 | Clarion Co Ltd | 可変容量素子 |
JPS61292358A (ja) * | 1985-06-19 | 1986-12-23 | Fujitsu Ltd | Mis型電界効果トランジスタの製造方法 |
JPS62156853A (ja) * | 1985-12-28 | 1987-07-11 | Toshiba Corp | Mos型可変容量回路 |
US4692717A (en) * | 1986-03-14 | 1987-09-08 | Western Digital Corporation | Voltage controlled oscillator with high speed current switching |
JPS6461070A (en) * | 1987-09-01 | 1989-03-08 | Nec Corp | Semiconductor device |
US4853655A (en) * | 1987-11-27 | 1989-08-01 | American Telephone And Telegraph Company, At&T Bell Laboratories | High frequency CMOS oscillator |
US4887053A (en) * | 1987-11-27 | 1989-12-12 | American Telephone And Telegraph Company | High frequency VLSI oscillator |
JPH01146351A (ja) * | 1987-12-02 | 1989-06-08 | Mitsubishi Electric Corp | 半導体装置 |
US5107227A (en) * | 1988-02-08 | 1992-04-21 | Magellan Corporation (Australia) Pty. Ltd. | Integratable phase-locked loop |
JPH0294914A (ja) * | 1988-09-30 | 1990-04-05 | Nec Corp | 電圧制御型発振器 |
US4866567A (en) * | 1989-01-06 | 1989-09-12 | Ncr Corporation | High frequency integrated circuit channel capacitor |
JP2786467B2 (ja) * | 1989-03-15 | 1998-08-13 | 沖電気工業株式会社 | Cmos半導体集積回路 |
JPH03278579A (ja) * | 1990-03-28 | 1991-12-10 | Nec Corp | 半導体装置 |
US5045966A (en) * | 1990-09-17 | 1991-09-03 | Micrel Semiconductor | Method for forming capacitor using FET process and structure formed by same |
JPH0477266U (ja) * | 1990-11-16 | 1992-07-06 | ||
US5061907A (en) * | 1991-01-17 | 1991-10-29 | National Semiconductor Corporation | High frequency CMOS VCO with gain constant and duty cycle compensation |
FR2679702A1 (fr) * | 1991-07-23 | 1993-01-29 | Thomson Csf | Element semi-conducteur a capacite variable pour circuit integre en micro-ondes et circuit integre equipe d'au moins un tel element. |
US5173835A (en) * | 1991-10-15 | 1992-12-22 | Motorola, Inc. | Voltage variable capacitor |
US5175512A (en) * | 1992-02-28 | 1992-12-29 | Avasem Corporation | High speed, power supply independent CMOS voltage controlled ring oscillator with level shifting circuit |
US5218325A (en) * | 1992-03-31 | 1993-06-08 | Motorola, Inc. | Low noise oscillator |
KR950003233B1 (ko) * | 1992-05-30 | 1995-04-06 | 삼성전자 주식회사 | 이중층 실리사이드 구조를 갖는 반도체 장치 및 그 제조방법 |
US5300898A (en) * | 1992-07-29 | 1994-04-05 | Ncr Corporation | High speed current/voltage controlled ring oscillator circuit |
JP2951128B2 (ja) * | 1992-10-20 | 1999-09-20 | 三洋電機株式会社 | 電圧制御型発振回路 |
US5365204A (en) * | 1993-10-29 | 1994-11-15 | International Business Machines Corporation | CMOS voltage controlled ring oscillator |
JPH07176952A (ja) * | 1993-12-20 | 1995-07-14 | Sony Corp | 発振器 |
JPH07162231A (ja) * | 1993-12-08 | 1995-06-23 | Nec Corp | 発振回路 |
US5396195A (en) * | 1993-12-13 | 1995-03-07 | At&T Corp. | Low-power-dissipation CMOS oscillator circuits |
JP3215258B2 (ja) * | 1994-04-05 | 2001-10-02 | 富士通株式会社 | Pll集積回路および調整方法 |
US5483207A (en) * | 1994-12-30 | 1996-01-09 | At&T Corp. | Adiabatic MOS oscillators |
JPH08102526A (ja) * | 1995-07-14 | 1996-04-16 | Rohm Co Ltd | Cmos半導体装置 |
DE19631389A1 (de) * | 1995-08-29 | 1997-03-06 | Hewlett Packard Co | Monolithischer spannungsvariabler Kondensator |
JPH0993124A (ja) * | 1995-09-27 | 1997-04-04 | Ando Electric Co Ltd | 広帯域vco回路 |
US5629652A (en) * | 1996-05-09 | 1997-05-13 | Analog Devices | Band-switchable, low-noise voltage controlled oscillator (VCO) for use with low-q resonator elements |
US5914513A (en) * | 1997-06-23 | 1999-06-22 | The Board Of Trustees Of The University Of Illinois | Electronically tunable capacitor |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11524222B2 (en) | 2018-11-21 | 2022-12-13 | Hanayama International Trading Limited | Polyhedral toy |
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WO1999013514A2 (en) | 1999-03-18 |
MY115602A (en) | 2003-07-31 |
EE200000047A (et) | 2000-10-16 |
JP2012028782A (ja) | 2012-02-09 |
BRPI9811639B1 (pt) | 2016-08-02 |
CN1270704A (zh) | 2000-10-18 |
CN1508966A (zh) | 2004-06-30 |
AU741339B2 (en) | 2001-11-29 |
JP2014039043A (ja) | 2014-02-27 |
JP2001516955A (ja) | 2001-10-02 |
US6100770A (en) | 2000-08-08 |
BR9811639A (pt) | 2000-08-08 |
IL134416A (en) | 2004-08-31 |
KR20010023918A (ko) | 2001-03-26 |
IL159398A0 (en) | 2004-06-01 |
AU9192498A (en) | 1999-03-29 |
SE9703295L (sv) | 1999-03-12 |
AR017100A1 (es) | 2001-08-22 |
WO1999013514A3 (en) | 1999-06-24 |
TR200000511T2 (tr) | 2000-06-21 |
IL134416A0 (en) | 2001-04-30 |
SE515783C2 (sv) | 2001-10-08 |
KR100552916B1 (ko) | 2006-02-22 |
CN100557945C (zh) | 2009-11-04 |
IL159187A0 (en) | 2004-06-01 |
SE9703295D0 (sv) | 1997-09-11 |
CN100342553C (zh) | 2007-10-10 |
IL159187A (en) | 2005-06-19 |
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