JP5842866B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 94
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims description 42
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 31
- 229920005591 polysilicon Polymers 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 11
- 238000004151 rapid thermal annealing Methods 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 230000004048 modification Effects 0.000 description 16
- 238000012986 modification Methods 0.000 description 16
- 230000004044 response Effects 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 6
- 230000036413 temperature sense Effects 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000006903 response to temperature Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
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- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
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- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66992—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by the variation of applied heat
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Description
図1は、本発明の実施の形態1に係る半導体装置を示す上面図である。図2は、図1のI−IIに沿った断面図である。図3は、本発明の実施の形態1に係る温度センスダイオードを示す上面図である。
図6は、本発明の実施の形態2に係る半導体装置を示す断面図である。トレンチ電極27は、n+型層18の直下に配置され、n+型層18と一体的に形成されている。これにより、熱変動が伝わり易くなり高速応答性が向上する。また、温度センスダイオード17に瞬間的に流れるサージ電流をトレンチ電極27に逃がすことができるため、ESD耐量が高くなる。
図10は、本発明の実施の形態3に係る半導体装置を示す断面図である。トレンチ電極27は、p+型層19とn−型層20との間のp+n−接合の直下に配置されている。p+n−接合がトレンチ電極27内までのびている。
Claims (10)
- 半導体基板と、
前記半導体基板の表面上に形成された第1の絶縁膜と、
前記第1の絶縁膜上に形成された温度センスダイオードと、
前記半導体基板の前記表面から内部にのびるトレンチ内に第2の絶縁膜を介して埋め込まれ、前記温度センスダイオードに接続されたトレンチ電極とを備え、
前記温度センスダイオードはn + 型層、p + 型層、及びn − 型層を有し、
前記トレンチ電極は前記n + 型層に接続され、
前記トレンチ電極は、前記n + 型層と一体的に形成されていることを特徴とする半導体装置。 - 半導体基板と、
前記半導体基板の表面上に形成された第1の絶縁膜と、
前記第1の絶縁膜上に形成された温度センスダイオードと、
前記半導体基板の前記表面から内部にのびるトレンチ内に第2の絶縁膜を介して埋め込まれ、前記温度センスダイオードに接続されたトレンチ電極とを備え、
前記温度センスダイオードはn + 型層、p + 型層、及びn − 型層を有し、
前記トレンチ電極はp + 型層に接続され、
前記トレンチ電極は、前記p + 型層と一体的に形成されていることを特徴とする半導体装置。 - 半導体基板と、
前記半導体基板の表面上に形成された第1の絶縁膜と、
前記第1の絶縁膜上に形成された温度センスダイオードと、
前記半導体基板の前記表面から内部にのびるトレンチ内に第2の絶縁膜を介して埋め込まれ、前記温度センスダイオードに接続されたトレンチ電極とを備え、
前記温度センスダイオードはn + 型層、p + 型層、及びn − 型層を有し、
前記トレンチ電極は前記n − 型層に接続され、
前記トレンチ電極は、前記n − 型層と一体的に形成されていることを特徴とする半導体装置。 - 半導体基板と、
前記半導体基板の表面上に形成された第1の絶縁膜と、
前記第1の絶縁膜上に形成された温度センスダイオードと、
前記半導体基板の前記表面から内部にのびるトレンチ内に第2の絶縁膜を介して埋め込まれ、前記温度センスダイオードに接続されたトレンチ電極とを備え、
前記温度センスダイオードはn + 型層、p + 型層、及びn − 型層を有し、
前記トレンチ電極は、前記n + 型層と一体的に形成された第1のトレンチ電極と、前記p + 型層と一体的に形成された第2のトレンチ電極と、前記n − 型層と一体的に形成された第3のトレンチ電極とを有することを特徴とする半導体装置。 - 半導体基板と、
前記半導体基板の表面上に形成された第1の絶縁膜と、
前記第1の絶縁膜上に形成された温度センスダイオードと、
前記半導体基板の前記表面から内部にのびるトレンチ内に第2の絶縁膜を介して埋め込まれ、前記温度センスダイオードに接続されたトレンチ電極とを備え、
前記温度センスダイオードはn + 型層、p + 型層、及びn − 型層を有し、
前記トレンチ電極は、前記p + 型層と前記n − 型層との間のp + n − 接合の直下に配置され、
前記p + n − 接合が前記トレンチ電極内までのびていることを特徴とする半導体装置。 - 半導体基板と、
前記半導体基板の表面上に形成された第1の絶縁膜と、
前記第1の絶縁膜上に形成された温度センスダイオードと、
前記半導体基板の前記表面から内部にのびるトレンチ内に第2の絶縁膜を介して埋め込まれ、前記温度センスダイオードに接続されたトレンチ電極とを備え、
前記温度センスダイオードはn + 型層、p + 型層、及びn − 型層を有し、
前記トレンチ電極は、前記n − 型層と前記n + 型層との間のn − n + 接合の直下に配置され、
前記n − n + 接合が前記トレンチ電極内までのびていることを特徴とする半導体装置。 - 前記温度センスダイオード及び前記トレンチ電極はポリシリコン又はアモルファスシリコンからなることを特徴とする請求項1〜6の何れか1項に記載の半導体装置。
- 前記第2の絶縁膜の厚みは前記第1の絶縁膜の厚みよりも薄いことを特徴とする請求項1〜6の何れか1項に記載の半導体装置。
- 前記半導体基板に形成された半導体素子を更に備え、
前記トレンチ電極は前記温度センスダイオードよりも前記半導体素子の近くに配置されていることを特徴とする請求項1〜6の何れか1項に記載の半導体装置。 - 半導体基板の表面上に第1の絶縁膜を形成する工程と、
前記半導体基板の前記表面から内部にのびるトレンチを形成する工程と、
前記第1の絶縁膜上及び前記トレンチ内に第2の絶縁膜を介してポリシリコン膜を形成する工程と、
前記ポリシリコン膜は前記トレンチを境にして分かれた第1の領域と第2の領域を有し、前記ポリシリコン膜の前記第1の領域に第1の不純物を注入する工程と、
前記ポリシリコン膜の前記第2の領域に第2の不純物を注入する工程と、
前記トレンチの部分の前記ポリシリコン膜に局所的にRTA(Rapid Thermal Annealing)処理を行って前記第1の不純物と前記第2の不純物を前記トレンチの深さ方向に拡散させ接合を形成する工程とを備えることを特徴とする半導体装置の製造方法。
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JP2013113124A JP5842866B2 (ja) | 2013-05-29 | 2013-05-29 | 半導体装置及びその製造方法 |
US14/186,925 US9240358B2 (en) | 2013-05-29 | 2014-02-21 | Semiconductor device provided with temperature sensing diode and manufacturing method thereof |
KR1020140043989A KR101672689B1 (ko) | 2013-05-29 | 2014-04-14 | 반도체장치 및 그 제조방법 |
DE102014005735.6A DE102014005735B4 (de) | 2013-05-29 | 2014-04-17 | Halbleitervorrichtung und Herstellungsverfahren dafür |
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CN105378923B (zh) * | 2013-07-11 | 2019-09-27 | 三菱电机株式会社 | 半导体装置的制造方法以及pin二极管 |
DE102014105790B4 (de) * | 2014-04-24 | 2019-08-29 | Infineon Technologies Dresden Gmbh | Halbleitervorrichtung mit elektrostatischer Entladungsschutzstruktur |
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