JP5775361B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5775361B2 JP5775361B2 JP2011110036A JP2011110036A JP5775361B2 JP 5775361 B2 JP5775361 B2 JP 5775361B2 JP 2011110036 A JP2011110036 A JP 2011110036A JP 2011110036 A JP2011110036 A JP 2011110036A JP 5775361 B2 JP5775361 B2 JP 5775361B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide semiconductor
- layer
- semiconductor layer
- conductive layer
- drain electrode
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 251
- 239000010410 layer Substances 0.000 description 377
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- 239000010408 film Substances 0.000 description 30
- 238000000034 method Methods 0.000 description 25
- 230000015556 catabolic process Effects 0.000 description 24
- 239000000758 substrate Substances 0.000 description 24
- 230000005684 electric field Effects 0.000 description 22
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 20
- 239000000463 material Substances 0.000 description 20
- 239000012298 atmosphere Substances 0.000 description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 18
- 229910052760 oxygen Inorganic materials 0.000 description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 16
- 239000001301 oxygen Substances 0.000 description 16
- 229910007541 Zn O Inorganic materials 0.000 description 15
- 239000007789 gas Substances 0.000 description 14
- 238000004544 sputter deposition Methods 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 238000003860 storage Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000011787 zinc oxide Substances 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 9
- 239000002356 single layer Substances 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 239000000969 carrier Substances 0.000 description 8
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- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 229910044991 metal oxide Inorganic materials 0.000 description 8
- 150000004706 metal oxides Chemical group 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 230000006870 function Effects 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 6
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- 239000000203 mixture Substances 0.000 description 6
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- 238000005240 physical vapour deposition Methods 0.000 description 6
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- 208000005156 Dehydration Diseases 0.000 description 5
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- 230000018044 dehydration Effects 0.000 description 5
- 238000006297 dehydration reaction Methods 0.000 description 5
- 238000006356 dehydrogenation reaction Methods 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
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- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000012141 concentrate Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910019092 Mg-O Inorganic materials 0.000 description 3
- 229910019395 Mg—O Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910001413 alkali metal ion Inorganic materials 0.000 description 2
- 229910001420 alkaline earth metal ion Inorganic materials 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
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- 238000009832 plasma treatment Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 150000003608 titanium Chemical class 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 108091006149 Electron carriers Proteins 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
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- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910020923 Sn-O Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
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- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
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- 230000005686 electrostatic field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- -1 hafnium aluminate Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
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- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229940038504 oxygen 100 % Drugs 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
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- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
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- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Description
本実施の形態では、半導体装置および半導体装置の作製方法の一形態を、図1乃至図4を用いて説明する。
次に、図1に示す半導体装置の他の構成について、図3を参照して説明する。
本実施の形態では、上記実施の形態1とは異なる半導体装置の構成について、図5乃至図7を参照して説明する。なお、実施の形態1と同一部分または同様な機能を有する部分については、その詳細な説明は省略する。
次に、図5に示す半導体装置の他の構成について、図6を参照して説明する。
次に、図5に示す半導体装置の他の構成について、図7を参照して説明する。
上記実施の形態で示したトランジスタを用いて、様々な半導体装置を作製することができる。例えば、電圧変動が大きい電圧から安定した値の電源電圧を生成する場合、または複数の異なる値の電源電圧が必要となる場合などに、ある値の直流電圧を別の値の直流電圧に変換する回路(直流変換回路またはDC−DCコンバータともいう)を用いることができる。上記実施の形態で示したトランジスタは、絶縁破壊耐圧を向上させたトランジスタであるため、該トランジスタを適用することで、信頼性の高い直流変換回路を構成することができる。
本実施の形態は、上記実施の形態3に示す電源回路を適用することができる電子機器の一例について図9を用いて説明する。
401 ゲート電極
402 ゲート絶縁層
403 酸化物半導体層
404 第1の導電層
405a 第1のソース電極
405b 第1のドレイン電極
406 絶縁層
406a 第1の絶縁層
406b 第2の絶縁層
407a 第2のソース電極
407b 第2のドレイン電極
407c 第2の導電層
410 トランジスタ
420 トランジスタ
450 トランジスタ
460 トランジスタ
470 トランジスタ
601 蓄電装置
602 直流変換回路
2800 筐体
2801 筐体
2802 表示パネル
2803 スピーカー
2804 マイクロフォン
2805 操作キー
2806 ポインティングデバイス
2807 カメラ用レンズ
2808 外部接続端子
2810 太陽電池セル
2811 外部メモリスロット
3001 本体
3002 筐体
3003 表示部
3004 キーボード
Claims (4)
- ゲート電極と、
前記ゲート電極上のゲート絶縁層と、
前記ゲート絶縁層上の酸化物半導体層と、
前記酸化物半導体層に接する第1の導電層および第2の導電層と、
前記酸化物半導体層、前記第1の導電層および前記第2の導電層上の絶縁層と、
前記絶縁層上の第3の導電層および第4の導電層とを有し、
前記第1の導電層は、ソース電極およびドレイン電極の一方として機能する領域を有し、
前記第2の導電層は、ソース電極およびドレイン電極の他方として機能する領域を有し、
前記第3の導電層は、前記第1の導電層と電気的に接続され、
前記第4の導電層は、前記第2の導電層と電気的に接続され、
前記酸化物半導体層のチャネル長方向の長さは、前記ゲート電極のチャネル長方向の長さよりも大きく、
前記酸化物半導体層のチャネル幅方向の端部の一方は、前記ゲート電極と重なる領域を有し、
前記酸化物半導体層のチャネル幅方向の端部の他方は、前記ゲート電極のチャネル幅方向の端部の外側に位置し、
前記酸化物半導体層の段差部分は、前記第1の導電層と接せず、
前記酸化物半導体層の段差部分は、前記第2の導電層と接せず、
前記酸化物半導体層のチャネル幅方向の端部の他方は、前記第1の導電層と重なる領域を有さず、
前記酸化物半導体層のチャネル幅方向の端部の一方は、前記第2の導電層と重なる領域を有さず、
前記酸化物半導体層のチャネル幅方向の端部の他方は、前記絶縁層を介して前記第3の導電層と重なる領域を有し、
前記酸化物半導体層のチャネル幅方向の端部の一方は、前記絶縁層を介して前記第4の導電層と重なる領域を有することを特徴とする半導体装置。 - 請求項1において、
前記酸化物半導体層の段差部分は、前記酸化物半導体層が前記ゲート電極の端部を覆う領域に設けられることを特徴とする半導体装置。 - 第1のゲート電極と、
前記第1のゲート電極上のゲート絶縁層と、
前記ゲート絶縁層上の酸化物半導体層と、
前記酸化物半導体層に接する第1の導電層および第2の導電層と、
前記酸化物半導体層、前記第1の導電層および前記第2の導電層上の第1の絶縁層と、
前記第1の絶縁層上の第5の導電層と、
前記第5の導電層上の第2の絶縁層と、
前記第2の絶縁層上の第3の導電層および第4の導電層と、を有し、
前記第1の導電層は、ソース電極およびドレイン電極の一方として機能する領域を有し、
前記第2の導電層は、ソース電極およびドレイン電極の他方として機能する領域を有し、
前記第5の導電層は、第2のゲート電極として機能する領域を有し、
前記第3の導電層は、前記第1の導電層と電気的に接続され、
前記第4の導電層は、前記第2の導電層と電気的に接続され、
前記酸化物半導体層のチャネル長方向の長さは、前記第1のゲート電極のチャネル長方向の長さよりも大きく、
前記酸化物半導体層のチャネル幅方向の端部の一方は、前記第1のゲート電極と重なる領域を有し、
前記酸化物半導体層のチャネル幅方向の端部の他方は、前記第1のゲート電極のチャネル幅方向の端部の外側に位置し、
前記酸化物半導体層の段差部分は、前記第1の導電層と接せず、
前記酸化物半導体層の段差部分は、前記第2の導電層と接せず、
前記酸化物半導体層のチャネル幅方向の端部の他方は、前記第1の導電層と重なる領域を有さず、
前記酸化物半導体層のチャネル幅方向の端部の一方は、前記第2の導電層と重なる領域を有さず、
前記酸化物半導体層のチャネル幅方向の端部の他方は、前記第1の絶縁層及び前記第2の絶縁層を介して前記第3の導電層と重なる領域を有し、
前記酸化物半導体層のチャネル幅方向の端部の一方は、前記第1の絶縁層及び前記第2の絶縁層を介して前記第4の導電層と重なる領域を有することを特徴とする半導体装置。 - 請求項3において、
前記酸化物半導体層の段差部分は、前記酸化物半導体層が前記第1のゲート電極の端部を覆う領域に設けられることを特徴とする半導体装置。
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