JP5663266B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5663266B2
JP5663266B2 JP2010242190A JP2010242190A JP5663266B2 JP 5663266 B2 JP5663266 B2 JP 5663266B2 JP 2010242190 A JP2010242190 A JP 2010242190A JP 2010242190 A JP2010242190 A JP 2010242190A JP 5663266 B2 JP5663266 B2 JP 5663266B2
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JP
Japan
Prior art keywords
layer
oxide
oxide semiconductor
metal
electrode layer
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Expired - Fee Related
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JP2010242190A
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English (en)
Japanese (ja)
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JP2011119693A (ja
JP2011119693A5 (enExample
Inventor
山崎　舜平
舜平 山崎
鈴之介 平石
鈴之介 平石
秋元　健吾
健吾 秋元
坂田　淳一郎
淳一郎 坂田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2010242190A priority Critical patent/JP5663266B2/ja
Publication of JP2011119693A publication Critical patent/JP2011119693A/ja
Publication of JP2011119693A5 publication Critical patent/JP2011119693A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2010242190A 2009-11-06 2010-10-28 半導体装置 Expired - Fee Related JP5663266B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010242190A JP5663266B2 (ja) 2009-11-06 2010-10-28 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009255103 2009-11-06
JP2009255103 2009-11-06
JP2010242190A JP5663266B2 (ja) 2009-11-06 2010-10-28 半導体装置

Publications (3)

Publication Number Publication Date
JP2011119693A JP2011119693A (ja) 2011-06-16
JP2011119693A5 JP2011119693A5 (enExample) 2013-11-14
JP5663266B2 true JP5663266B2 (ja) 2015-02-04

Family

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Family Applications (1)

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JP2010242190A Expired - Fee Related JP5663266B2 (ja) 2009-11-06 2010-10-28 半導体装置

Country Status (6)

Country Link
US (1) US8530892B2 (enExample)
JP (1) JP5663266B2 (enExample)
KR (1) KR101818265B1 (enExample)
CN (1) CN102598279B (enExample)
TW (1) TWI529933B (enExample)
WO (1) WO2011055668A1 (enExample)

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KR102026212B1 (ko) 2009-11-20 2019-09-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
KR102008769B1 (ko) 2009-11-27 2019-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작방법
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JP6285150B2 (ja) * 2012-11-16 2018-02-28 株式会社半導体エネルギー研究所 半導体装置
WO2014103901A1 (en) 2012-12-25 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102297634B1 (ko) 2013-04-19 2021-09-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 이차 전지 및 그 제작 방법
TWI631711B (zh) * 2013-05-01 2018-08-01 半導體能源研究所股份有限公司 半導體裝置
TWM471031U (zh) 2013-08-13 2014-01-21 Chunghwa Picture Tubes Ltd 氧化物半導體薄膜電晶體基板
JP2015070114A (ja) * 2013-09-30 2015-04-13 エルジー ディスプレイ カンパニー リミテッド 薄膜半導体装置
US9882014B2 (en) 2013-11-29 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CA2932446A1 (en) * 2013-12-04 2015-06-11 The Governors Of The University Of Alberta Buried source schottky barrier thin film transistor and method of manufacture
KR102221842B1 (ko) * 2014-04-08 2021-03-03 삼성디스플레이 주식회사 센서 기판, 이의 제조 방법 및 이를 갖는 표시장치
CN106887436B (zh) * 2015-12-16 2019-10-25 鸿富锦精密工业（深圳）有限公司 薄膜晶体管阵列基板及其制备方法
TWI684283B (zh) * 2017-06-07 2020-02-01 日商日新電機股份有限公司 薄膜電晶體的製造方法
CN111613521B (zh) * 2020-05-08 2022-04-05 中国科学院宁波材料技术与工程研究所 一种化合物薄膜、制备方法及其应用

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