JP5602095B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5602095B2
JP5602095B2 JP2011129261A JP2011129261A JP5602095B2 JP 5602095 B2 JP5602095 B2 JP 5602095B2 JP 2011129261 A JP2011129261 A JP 2011129261A JP 2011129261 A JP2011129261 A JP 2011129261A JP 5602095 B2 JP5602095 B2 JP 5602095B2
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JP
Japan
Prior art keywords
base plate
semiconductor device
insulating substrate
main surface
transfer mold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011129261A
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English (en)
Japanese (ja)
Other versions
JP2012256746A (ja
JP2012256746A5 (https=
Inventor
哲也 上田
義弘 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2011129261A priority Critical patent/JP5602095B2/ja
Priority to US13/405,890 priority patent/US9029994B2/en
Priority to CN201210081415.7A priority patent/CN102820271B/zh
Priority to DE102012206596.2A priority patent/DE102012206596B4/de
Publication of JP2012256746A publication Critical patent/JP2012256746A/ja
Publication of JP2012256746A5 publication Critical patent/JP2012256746A5/ja
Application granted granted Critical
Publication of JP5602095B2 publication Critical patent/JP5602095B2/ja
Active legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
JP2011129261A 2011-06-09 2011-06-09 半導体装置 Active JP5602095B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011129261A JP5602095B2 (ja) 2011-06-09 2011-06-09 半導体装置
US13/405,890 US9029994B2 (en) 2011-06-09 2012-02-27 Semiconductor device
CN201210081415.7A CN102820271B (zh) 2011-06-09 2012-03-26 半导体装置
DE102012206596.2A DE102012206596B4 (de) 2011-06-09 2012-04-20 Halbleitervorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011129261A JP5602095B2 (ja) 2011-06-09 2011-06-09 半導体装置

Publications (3)

Publication Number Publication Date
JP2012256746A JP2012256746A (ja) 2012-12-27
JP2012256746A5 JP2012256746A5 (https=) 2013-06-20
JP5602095B2 true JP5602095B2 (ja) 2014-10-08

Family

ID=47292483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011129261A Active JP5602095B2 (ja) 2011-06-09 2011-06-09 半導体装置

Country Status (4)

Country Link
US (1) US9029994B2 (https=)
JP (1) JP5602095B2 (https=)
CN (1) CN102820271B (https=)
DE (1) DE102012206596B4 (https=)

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WO2014046058A1 (ja) 2012-09-20 2014-03-27 ローム株式会社 パワーモジュール半導体装置およびインバータ装置、およびパワーモジュール半導体装置の製造方法、および金型
CN105190874B (zh) 2013-05-09 2018-05-18 三菱电机株式会社 半导体模块及半导体装置
DE102013216709B4 (de) * 2013-08-22 2021-03-25 Infineon Technologies Ag Halbleiteranordnung, verfahren zur herstellung einer anzahl von chipbaugruppen und verfahren zur herstellung einer halbleiteranordnung
JP6160698B2 (ja) * 2013-08-23 2017-07-12 富士電機株式会社 半導体装置
JP6154342B2 (ja) * 2013-12-06 2017-06-28 トヨタ自動車株式会社 半導体装置
JP2015170785A (ja) * 2014-03-10 2015-09-28 三菱電機株式会社 絶縁基板および電力用半導体装置
JP6356550B2 (ja) * 2014-09-10 2018-07-11 三菱電機株式会社 半導体装置およびその製造方法
CN104201116B (zh) 2014-09-12 2018-04-20 苏州晶方半导体科技股份有限公司 指纹识别芯片封装方法和封装结构
JP6320331B2 (ja) * 2015-03-16 2018-05-09 三菱電機株式会社 電力用半導体装置
JP2017135144A (ja) * 2016-01-25 2017-08-03 三菱電機株式会社 半導体モジュール
US9704812B1 (en) * 2016-05-06 2017-07-11 Atmel Corporation Double-sided electronic package
JP6673012B2 (ja) * 2016-05-26 2020-03-25 三菱電機株式会社 半導体装置およびその製造方法
JP6783128B2 (ja) * 2016-12-06 2020-11-11 三菱電機株式会社 リード加工装置
JP6665804B2 (ja) * 2017-01-30 2020-03-13 トヨタ自動車株式会社 半導体装置
JP7031172B2 (ja) * 2017-08-24 2022-03-08 富士電機株式会社 半導体装置
JP6816691B2 (ja) * 2017-09-29 2021-01-20 三菱電機株式会社 半導体装置
JP6848802B2 (ja) * 2017-10-11 2021-03-24 三菱電機株式会社 半導体装置
DE102017218875C5 (de) * 2017-10-23 2026-03-05 Semikron Danfoss GmbH Leistungsmodul-Baugruppe
KR102496483B1 (ko) * 2017-11-23 2023-02-06 삼성전자주식회사 아발란치 광검출기 및 이를 포함하는 이미지 센서
JP7010143B2 (ja) * 2018-05-24 2022-02-10 三菱電機株式会社 絶縁基板の検査方法、検査装置
JP6906654B2 (ja) * 2018-06-05 2021-07-21 三菱電機株式会社 半導体装置およびその製造方法
JP2020031130A (ja) * 2018-08-22 2020-02-27 トヨタ自動車株式会社 半導体装置
JP7346178B2 (ja) * 2019-09-05 2023-09-19 株式会社東芝 半導体装置
CN114762109B (zh) * 2019-12-10 2025-05-23 三菱电机株式会社 半导体封装件
JP6999749B2 (ja) * 2020-06-16 2022-02-04 三菱電機株式会社 電気機器配線部品
US20240030101A1 (en) * 2020-09-17 2024-01-25 Hitachi Energy Switzerland Ag Power Module and Method for Producing a Power Module
CN116034473A (zh) 2020-10-14 2023-04-28 罗姆股份有限公司 半导体模块
JP7352754B2 (ja) 2020-10-14 2023-09-28 ローム株式会社 半導体モジュール
WO2022080122A1 (ja) 2020-10-14 2022-04-21 ローム株式会社 半導体モジュール
CN116018677A (zh) 2020-10-14 2023-04-25 罗姆股份有限公司 半导体模块
WO2022219934A1 (ja) 2021-04-12 2022-10-20 富士電機株式会社 半導体装置
WO2026028737A1 (ja) * 2024-08-01 2026-02-05 富士電機株式会社 半導体モジュール

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Also Published As

Publication number Publication date
US20120313252A1 (en) 2012-12-13
CN102820271B (zh) 2015-04-08
JP2012256746A (ja) 2012-12-27
US9029994B2 (en) 2015-05-12
DE102012206596B4 (de) 2017-11-16
DE102012206596A1 (de) 2013-01-03
CN102820271A (zh) 2012-12-12

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