DE102012206596B4 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

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Publication number
DE102012206596B4
DE102012206596B4 DE102012206596.2A DE102012206596A DE102012206596B4 DE 102012206596 B4 DE102012206596 B4 DE 102012206596B4 DE 102012206596 A DE102012206596 A DE 102012206596A DE 102012206596 B4 DE102012206596 B4 DE 102012206596B4
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DE
Germany
Prior art keywords
base plate
semiconductor device
insulating substrate
molding resin
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102012206596.2A
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German (de)
English (en)
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DE102012206596A1 (de
Inventor
Tetsuya Ueda
Yoshihiro Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication date
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Publication of DE102012206596A1 publication Critical patent/DE102012206596A1/de
Application granted granted Critical
Publication of DE102012206596B4 publication Critical patent/DE102012206596B4/de
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
DE102012206596.2A 2011-06-09 2012-04-20 Halbleitervorrichtung Active DE102012206596B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011129261A JP5602095B2 (ja) 2011-06-09 2011-06-09 半導体装置
JP2011-129261 2011-06-09

Publications (2)

Publication Number Publication Date
DE102012206596A1 DE102012206596A1 (de) 2013-01-03
DE102012206596B4 true DE102012206596B4 (de) 2017-11-16

Family

ID=47292483

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102012206596.2A Active DE102012206596B4 (de) 2011-06-09 2012-04-20 Halbleitervorrichtung

Country Status (4)

Country Link
US (1) US9029994B2 (https=)
JP (1) JP5602095B2 (https=)
CN (1) CN102820271B (https=)
DE (1) DE102012206596B4 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014046058A1 (ja) 2012-09-20 2014-03-27 ローム株式会社 パワーモジュール半導体装置およびインバータ装置、およびパワーモジュール半導体装置の製造方法、および金型
CN105190874B (zh) 2013-05-09 2018-05-18 三菱电机株式会社 半导体模块及半导体装置
DE102013216709B4 (de) * 2013-08-22 2021-03-25 Infineon Technologies Ag Halbleiteranordnung, verfahren zur herstellung einer anzahl von chipbaugruppen und verfahren zur herstellung einer halbleiteranordnung
JP6160698B2 (ja) * 2013-08-23 2017-07-12 富士電機株式会社 半導体装置
JP6154342B2 (ja) * 2013-12-06 2017-06-28 トヨタ自動車株式会社 半導体装置
JP2015170785A (ja) * 2014-03-10 2015-09-28 三菱電機株式会社 絶縁基板および電力用半導体装置
JP6356550B2 (ja) * 2014-09-10 2018-07-11 三菱電機株式会社 半導体装置およびその製造方法
CN104201116B (zh) 2014-09-12 2018-04-20 苏州晶方半导体科技股份有限公司 指纹识别芯片封装方法和封装结构
JP6320331B2 (ja) * 2015-03-16 2018-05-09 三菱電機株式会社 電力用半導体装置
JP2017135144A (ja) * 2016-01-25 2017-08-03 三菱電機株式会社 半導体モジュール
US9704812B1 (en) * 2016-05-06 2017-07-11 Atmel Corporation Double-sided electronic package
JP6673012B2 (ja) * 2016-05-26 2020-03-25 三菱電機株式会社 半導体装置およびその製造方法
JP6783128B2 (ja) * 2016-12-06 2020-11-11 三菱電機株式会社 リード加工装置
JP6665804B2 (ja) * 2017-01-30 2020-03-13 トヨタ自動車株式会社 半導体装置
JP7031172B2 (ja) * 2017-08-24 2022-03-08 富士電機株式会社 半導体装置
JP6816691B2 (ja) * 2017-09-29 2021-01-20 三菱電機株式会社 半導体装置
JP6848802B2 (ja) * 2017-10-11 2021-03-24 三菱電機株式会社 半導体装置
DE102017218875C5 (de) * 2017-10-23 2026-03-05 Semikron Danfoss GmbH Leistungsmodul-Baugruppe
KR102496483B1 (ko) * 2017-11-23 2023-02-06 삼성전자주식회사 아발란치 광검출기 및 이를 포함하는 이미지 센서
JP7010143B2 (ja) * 2018-05-24 2022-02-10 三菱電機株式会社 絶縁基板の検査方法、検査装置
JP6906654B2 (ja) * 2018-06-05 2021-07-21 三菱電機株式会社 半導体装置およびその製造方法
JP2020031130A (ja) * 2018-08-22 2020-02-27 トヨタ自動車株式会社 半導体装置
JP7346178B2 (ja) * 2019-09-05 2023-09-19 株式会社東芝 半導体装置
CN114762109B (zh) * 2019-12-10 2025-05-23 三菱电机株式会社 半导体封装件
JP6999749B2 (ja) * 2020-06-16 2022-02-04 三菱電機株式会社 電気機器配線部品
US20240030101A1 (en) * 2020-09-17 2024-01-25 Hitachi Energy Switzerland Ag Power Module and Method for Producing a Power Module
CN116034473A (zh) 2020-10-14 2023-04-28 罗姆股份有限公司 半导体模块
JP7352754B2 (ja) 2020-10-14 2023-09-28 ローム株式会社 半導体モジュール
WO2022080122A1 (ja) 2020-10-14 2022-04-21 ローム株式会社 半導体モジュール
CN116018677A (zh) 2020-10-14 2023-04-25 罗姆股份有限公司 半导体模块
WO2022219934A1 (ja) 2021-04-12 2022-10-20 富士電機株式会社 半導体装置
WO2026028737A1 (ja) * 2024-08-01 2026-02-05 富士電機株式会社 半導体モジュール

Citations (7)

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Publication number Priority date Publication date Assignee Title
JPH09129822A (ja) * 1995-10-26 1997-05-16 Mitsubishi Electric Corp 半導体装置
EP1119037A2 (en) * 1996-08-20 2001-07-25 Hitachi, Ltd. Semiconductor device and method of manufacturing thereof
US20020109211A1 (en) * 2001-02-09 2002-08-15 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing same
JP2004319992A (ja) * 2003-04-10 2004-11-11 Semikron Elektron Gmbh モジュール構成式のパワー半導体モジュール
US20070090514A1 (en) * 2005-10-24 2007-04-26 Freescale Semiconductor, Inc. Semiconductor structure and method of manufacture
US20080079145A1 (en) * 2006-09-28 2008-04-03 Infineon Technologies Ag Power semiconductor arrangement
US20100133684A1 (en) * 2008-11-28 2010-06-03 Mitsubishi Electric Corporation Power semiconductor module and manufacturing method thereof

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JPH11204693A (ja) 1998-01-14 1999-07-30 Fuji Electric Co Ltd 半導体装置
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JP5345017B2 (ja) 2009-08-27 2013-11-20 三菱電機株式会社 電力用半導体装置とその製造方法
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Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09129822A (ja) * 1995-10-26 1997-05-16 Mitsubishi Electric Corp 半導体装置
EP1119037A2 (en) * 1996-08-20 2001-07-25 Hitachi, Ltd. Semiconductor device and method of manufacturing thereof
US20020109211A1 (en) * 2001-02-09 2002-08-15 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing same
JP2004319992A (ja) * 2003-04-10 2004-11-11 Semikron Elektron Gmbh モジュール構成式のパワー半導体モジュール
US20050093122A9 (en) * 2003-04-10 2005-05-05 Semikron Elektronik Gmbh Modular power semiconductor module
US20070090514A1 (en) * 2005-10-24 2007-04-26 Freescale Semiconductor, Inc. Semiconductor structure and method of manufacture
US20080079145A1 (en) * 2006-09-28 2008-04-03 Infineon Technologies Ag Power semiconductor arrangement
US20100133684A1 (en) * 2008-11-28 2010-06-03 Mitsubishi Electric Corporation Power semiconductor module and manufacturing method thereof

Also Published As

Publication number Publication date
US20120313252A1 (en) 2012-12-13
JP5602095B2 (ja) 2014-10-08
CN102820271B (zh) 2015-04-08
JP2012256746A (ja) 2012-12-27
US9029994B2 (en) 2015-05-12
DE102012206596A1 (de) 2013-01-03
CN102820271A (zh) 2012-12-12

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