JP2004319992A - モジュール構成式のパワー半導体モジュール - Google Patents
モジュール構成式のパワー半導体モジュール Download PDFInfo
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- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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Abstract
【解決手段】 パワー半導体モジュール(1)が、個々の部分モジュール(10)を接続させ且つ互いに固定させる唯一のカバーを有し、及び/又は、全ての部分モジュールが固定接続部を用いて互いに配設されていること。
【選択図】 図6
Description
・ 部分モジュールに分割することにより、これらの部分モジュールが故障の場合には個別に交換され得る。
・ 同種の部分モジュールにより、様々なパワー半導体モジュールの製造がより少ない部品消費で実施可能である。
・ 個々の部分モジュールから成る構成にもかかわらず、パワー半導体モジュールが例えば3相フルブリッジ回路の従来技術に対してコンパチブルである。
10 部分モジュール
20 ベースプレート
22 凹部(又は半穴)
24 長穴(又は丸穴)
26 突合せエッジ
28 凹形成された部分(面)
30 ケーシング
32 ロックノーズ
34 ロックノーズ
36 支持部
40 ターミナル要素
42 負荷ターミナル
44 補助ターミナル
46、48 ワイヤボンディング接続部
50 基板
52 絶縁材料ボディ
54 接続パス
56 パワー半導体素子
58 ワイヤボンディング接続部
62、64 ワイヤボンディング接続部
70 カバー
72、72a 丸穴
74 継続部
80 ネジ
Claims (7)
- 平坦なボディ上に取り付けるパワー半導体モジュール(10)であって、このパワー半導体モジュールが、多数の部分モジュール(10)から構成され、これらの部分モジュールの方は、ベースプレート(20)と、フレーム状のケーシング(30)と、負荷ターミナル(42)及び補助ターミナル(44)のためのターミナル要素(40)とを有し、更に各ケーシング(30)内部で各々のベースプレート(20)上に配設されている電気絶縁式の少なくとも1つの基板(50)を備えていて、この基板の方は絶縁材料ボディ(52)を有し、この絶縁材料ボディが、この絶縁材料ボディ上に設けられていて互いに絶縁されている金属性の多数の接続パス(54)と、これらの接続パス上に設けられていて回路に適してこれらの接続パスと接続されている多数のパワー半導体素子(56)とを備えている前記パワー半導体モジュールにおいて、
このパワー半導体モジュールが、個々の部分モジュールを接続させ且つ互いに固定させる唯一のカバー(70)を有し、及び/又は、全ての部分モジュールが固定接続部(34、36)を用いて互いに配設されていることを特徴とするパワー半導体モジュール。 - カバー(70)がスナップ・ロック接続部を用いて部分モジュール(10)と接続されていて、更にはケーシング(30)がロックノーズ(32)を有し、カバー(70)がそれらのロックノーズに対応する支持部を有することを特徴とする、請求項1に記載のパワー半導体モジュール。
- 各部分モジュール(10)が、丸穴状又は長穴状であるが全ての方面では包囲されていない少なくとも2つの凹部(22)を有し、これらの凹部が、部分モジュール(10)をパワー半導体モジュール(1)として配置構成する場合に各々互いに境を接する側面にて丸穴又は長穴を完全なものとすることを特徴とする、請求項1に記載のパワー半導体モジュール。
- カバー(70)がネジ(80)を受容するための丸穴状の凹部(72)を有し、これらの凹部が部分モジュール(10)の突合せ領域(26)にてそこで丸穴又は長穴(24)を形成する凹部(22)と一列に並んで配設されていることを特徴とする、請求項2に記載のパワー半導体モジュール。
- 各部分モジュール(10)が、他の部分モジュールに対する境界側にて少なくとも1つのロックノーズ(34)を有し、並びに、反対側の対峙する境界側にてこのロックノーズに対応する少なくとも1つの支持部(36)を有することを特徴とする、請求項1に記載のパワー半導体モジュール。
- 固定接続部が、直接的に隣接する全ての部分モジュールのスナップ・ロック接続部(34、36)として形成されていることを特徴とする、請求項5に記載のパワー半導体モジュール。
- 固定接続部が、各々の側面の全ての凹部(22)並びにこれらの凹部から形成されている丸穴又は長穴(24)を覆うレールとして形成されていることを特徴とする、請求項2に記載のパワー半導体モジュール。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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DE10316356A DE10316356B4 (de) | 2003-04-10 | 2003-04-10 | Modular aufgebautes Leistungshalbleitermodul |
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Publication Number | Publication Date |
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JP2004319992A true JP2004319992A (ja) | 2004-11-11 |
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Application Number | Title | Priority Date | Filing Date |
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JP2004095430A Pending JP2004319992A (ja) | 2003-04-10 | 2004-03-29 | モジュール構成式のパワー半導体モジュール |
Country Status (7)
Country | Link |
---|---|
US (1) | US7190070B2 (ja) |
EP (1) | EP1467406B1 (ja) |
JP (1) | JP2004319992A (ja) |
AT (1) | ATE350768T1 (ja) |
DE (2) | DE10316356B4 (ja) |
DK (1) | DK1467406T3 (ja) |
ES (1) | ES2279243T3 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007049131A (ja) * | 2005-08-09 | 2007-02-22 | Semikron Elektronik Gmbh & Co Kg | 桶形状のベースボディを備えたパワー半導体モジュール |
JP2007059902A (ja) * | 2005-08-24 | 2007-03-08 | Semikron Elektronik Gmbh & Co Kg | 固定装置を備えたパワー半導体モジュール |
JP2008258626A (ja) * | 2007-04-04 | 2008-10-23 | Semikron Elektronik Gmbh & Co Kg | 押圧接触式のパワー半導体モジュール並びにその製造方法 |
DE102012206596A1 (de) | 2011-06-09 | 2013-01-03 | Mitsubishi Electric Corp. | Halbleitervorrichtung |
JP2014053618A (ja) * | 2008-11-26 | 2014-03-20 | Infineon Technologies Ag | セグメント化された基板を有するパワー半導体モジュール |
JP2018182119A (ja) * | 2017-04-17 | 2018-11-15 | 三菱電機株式会社 | 半導体装置 |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4583122B2 (ja) * | 2004-09-28 | 2010-11-17 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
DE102005039278A1 (de) | 2005-08-19 | 2007-02-22 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit Leitungselement |
DE102007007223B4 (de) | 2007-02-14 | 2008-11-20 | Semikron Elektronik Gmbh & Co. Kg | Modular aufgebautes Leistungshalbleitermodul |
DE102007026768A1 (de) * | 2007-06-09 | 2008-12-11 | Semikron Elektronik Gmbh & Co. Kg | Druckkontaktiertes dreiphasiges Stromrichtermodul |
DE102007046969B3 (de) | 2007-09-28 | 2009-04-02 | Siemens Ag | Elektronische Schaltung aus Teilschaltungen und Verfahren zu deren Herstellung und demgemäßer Umrichter oder Schalter |
WO2010004802A1 (ja) | 2008-07-10 | 2010-01-14 | 三菱電機株式会社 | 電力用半導体モジュール |
DE102008033410B4 (de) | 2008-07-16 | 2011-06-30 | SEMIKRON Elektronik GmbH & Co. KG, 90431 | Leistungselektronische Verbindungseinrichtung mit einem Leistungshalbleiterbauelement und Herstellungsverfahren hierzu |
DE102008034148B4 (de) * | 2008-07-22 | 2011-08-25 | Infineon Technologies AG, 85579 | Leistungshalbleitermodulsystem und Verfahren zur Herstellung einer Leistungshalbleiteranordnung |
US8279640B2 (en) | 2008-09-24 | 2012-10-02 | Teco-Westinghouse Motor Company | Modular multi-pulse transformer rectifier for use in symmetric multi-level power converter |
US7830681B2 (en) | 2008-09-24 | 2010-11-09 | Teco-Westinghouse Motor Company | Modular multi-pulse transformer rectifier for use in asymmetric multi-level power converter |
US7940537B2 (en) * | 2008-12-31 | 2011-05-10 | Teco-Westinghouse Motor Company | Partial regeneration in a multi-level power inverter |
US8223515B2 (en) * | 2009-02-26 | 2012-07-17 | TECO—Westinghouse Motor Company | Pre-charging an inverter using an auxiliary winding |
US8976526B2 (en) | 2009-06-30 | 2015-03-10 | Teco-Westinghouse Motor Company | Providing a cooling system for a medium voltage drive system |
US8575479B2 (en) | 2009-06-30 | 2013-11-05 | TECO—Westinghouse Motor Company | Providing a transformer for an inverter |
US8254076B2 (en) | 2009-06-30 | 2012-08-28 | Teco-Westinghouse Motor Company | Providing modular power conversion |
US8130501B2 (en) | 2009-06-30 | 2012-03-06 | Teco-Westinghouse Motor Company | Pluggable power cell for an inverter |
US8711530B2 (en) * | 2009-06-30 | 2014-04-29 | Teco-Westinghouse Motor Company | Pluggable power cell for an inverter |
DE102009033258B4 (de) * | 2009-07-14 | 2019-01-10 | Sew-Eurodrive Gmbh & Co Kg | Gehäuse |
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- 2004-03-13 DE DE502004002495T patent/DE502004002495D1/de not_active Expired - Lifetime
- 2004-03-13 DK DK04006021T patent/DK1467406T3/da active
- 2004-03-13 EP EP04006021A patent/EP1467406B1/de not_active Expired - Lifetime
- 2004-03-13 AT AT04006021T patent/ATE350768T1/de active
- 2004-03-29 JP JP2004095430A patent/JP2004319992A/ja active Pending
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JP2007049131A (ja) * | 2005-08-09 | 2007-02-22 | Semikron Elektronik Gmbh & Co Kg | 桶形状のベースボディを備えたパワー半導体モジュール |
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JP2008258626A (ja) * | 2007-04-04 | 2008-10-23 | Semikron Elektronik Gmbh & Co Kg | 押圧接触式のパワー半導体モジュール並びにその製造方法 |
JP2014053618A (ja) * | 2008-11-26 | 2014-03-20 | Infineon Technologies Ag | セグメント化された基板を有するパワー半導体モジュール |
DE102012206596A1 (de) | 2011-06-09 | 2013-01-03 | Mitsubishi Electric Corp. | Halbleitervorrichtung |
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DE102012206596B4 (de) * | 2011-06-09 | 2017-11-16 | Mitsubishi Electric Corp. | Halbleitervorrichtung |
JP2018182119A (ja) * | 2017-04-17 | 2018-11-15 | 三菱電機株式会社 | 半導体装置 |
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US20050012190A1 (en) | 2005-01-20 |
ES2279243T3 (es) | 2007-08-16 |
US20050093122A9 (en) | 2005-05-05 |
EP1467406B1 (de) | 2007-01-03 |
DE502004002495D1 (de) | 2007-02-15 |
DK1467406T3 (da) | 2007-05-14 |
EP1467406A1 (de) | 2004-10-13 |
DE10316356B4 (de) | 2012-07-26 |
US7190070B2 (en) | 2007-03-13 |
ATE350768T1 (de) | 2007-01-15 |
DE10316356A1 (de) | 2004-11-11 |
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