WO2016194048A1 - 半導体装置、及び、半導体装置の実装方法 - Google Patents
半導体装置、及び、半導体装置の実装方法 Download PDFInfo
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- WO2016194048A1 WO2016194048A1 PCT/JP2015/065584 JP2015065584W WO2016194048A1 WO 2016194048 A1 WO2016194048 A1 WO 2016194048A1 JP 2015065584 W JP2015065584 W JP 2015065584W WO 2016194048 A1 WO2016194048 A1 WO 2016194048A1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02K—DYNAMO-ELECTRIC MACHINES
- H02K11/00—Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection
- H02K11/30—Structural association with control circuits or drive circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/115—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02K—DYNAMO-ELECTRIC MACHINES
- H02K11/00—Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02K—DYNAMO-ELECTRIC MACHINES
- H02K11/00—Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection
- H02K11/30—Structural association with control circuits or drive circuits
- H02K11/33—Drive circuits, e.g. power electronics
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02K—DYNAMO-ELECTRIC MACHINES
- H02K11/00—Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection
- H02K11/30—Structural association with control circuits or drive circuits
- H02K11/38—Control circuits or drive circuits associated with geared commutator motors of the worm-and-wheel type
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02K—DYNAMO-ELECTRIC MACHINES
- H02K5/00—Casings; Enclosures; Supports
- H02K5/04—Casings or enclosures characterised by the shape, form or construction thereof
- H02K5/22—Auxiliary parts of casings not covered by groups H02K5/06-H02K5/20, e.g. shaped to form connection boxes or terminal boxes
- H02K5/225—Terminal boxes or connection arrangements
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
Definitions
- the present invention relates to a semiconductor device and a semiconductor device mounting method.
- Patent Document 1 describes a configuration in which a plurality of semiconductor devices formed in a trapezoidal shape in plan view are individually attached to an electric motor (base portion) formed in a columnar shape and arranged in an annular shape. ing.
- a semiconductor device as one embodiment of the present invention includes a semi-annular device body having an inner peripheral surface formed in an arc shape in plan view and an outer peripheral surface formed in an arc shape in plan view, and the circumferential direction of the device main body A notch portion into which a screw for fixing the apparatus main body to the base portion is inserted is formed on the first end surface on one end side and the second end surface on the other end side.
- the semiconductor device 10 constitutes a control circuit for the electric motor 1 used in an electric power steering device for a vehicle or the like.
- the use and function of the semiconductor device 10 are examples, and the use and function of the semiconductor device 10 are not limited to this.
- the semiconductor device 10 includes a device body 13 and a plurality of connection terminals 12.
- the apparatus main body 13 is formed in a semi-annular shape (semi-annular) in plan view.
- the apparatus body 13 is formed in a plate shape having a predetermined thickness.
- the apparatus main body 13 is configured by sealing a semiconductor element and a circuit board (both not shown) constituting a control circuit of the electric motor 1 with a sealing material such as a mold resin.
- connection terminals 12 are attached to the outer peripheral edge (outer peripheral surface 13 o) of the apparatus main body 13, and are arranged at intervals in the circumferential direction of the apparatus main body 13.
- the connection terminal 12 is made of a conductive material such as metal, and connects the semiconductor element and the circuit board in the apparatus main body 13 to another external device, a power source, and the like.
- Each connection terminal 12 is a lead that protrudes outward in the radial direction of the apparatus main body 13 and then bends in an L shape toward the upper side.
- An L-shaped bent portion of each connection terminal 12 and a tip portion protruding upward from the bent portion are exposed to the outside on the radially outer side of the apparatus main body 13.
- the inner peripheral surface 13i and the outer peripheral surface 13o of the apparatus main body 13 are formed in an arc shape (arc shape) that is concentric with each other.
- the circumferential direction of the semiconductor device 10 means a direction along an arc of a semicircle drawn by the device body 13 in plan view.
- the inner peripheral surface 13 i of the device main body 13 means a surface along the circumferential direction that is located on the radially inner side of the device main body 13 in plan view.
- the outer peripheral surface 13o of the apparatus main body 13 means the surface along the circumferential direction located in the radial direction outer side of the apparatus main body 13 by planar view.
- the apparatus main body 13 has a first end face 13e-1 on one end side in the circumferential direction and a second end face 13e-2 on the other end side in the circumferential direction.
- the inner peripheral surface 13i and the outer peripheral surface 13o of the apparatus main body 13 are connected to each other by the first end face 13e-1 and the second end face 13e-2 at each end in the circumferential direction of the apparatus main body 13.
- a second notch 14B (in the vicinity of each radially inner corner adjacent to the inner peripheral surface 13i is provided. A notch) is formed.
- the second notch portion 14B includes a straight portion a parallel to the first end surface 13e-1 and the second end surface 13e-2 and a radially outer side of the straight portion a.
- a curved portion b that curves in an arc shape from the end portion toward the first end surface 13e-1 and the second end surface 13e-2.
- outer peripheral notches 15A and 15B are formed on the outer peripheral surface 13o of the apparatus main body 13 so as to be separated from each other in the circumferential direction.
- a shaft portion 11a of a screw 11 for fixing the apparatus main body 13 to the base portion 1A is inserted into each of the outer peripheral notches 15A and 15B (see FIG. 1).
- the outer circumferential notches 15A and 15B are formed to be recessed in a substantially U shape from the outer circumferential surface 13o of the apparatus main body 13 toward the radially inner side.
- the distances to the part 15B are equal to each other.
- the two semiconductor devices 10 forming a pair are attached to the base portion 1A of the electric motor 1 as follows.
- the two semiconductor devices 10 first, the first end surface 13 e-1 of one device body 13 and the second end surface 13 e-2 of the other device body 13 are opposed to each other, and the second end surface of one device body 13 is second.
- the first end surface 13e-1 of the other apparatus main body 13 is opposed to the first end surface 13e-2 of the other device main body 13, and is arranged in an annular shape on the base portion 1A of the electric motor 1.
- the first notches 14A of the two semiconductor devices 10 face each other, and the second notches 14B face each other.
- the first cutout portion 14A, the second cutout portion 14B, and the outer peripheral cutout portions 15A and 15B have corresponding screw holes (not shown) on the base portion 1A. It is arranged to be located on the top.
- the outer diameter of the annular portion including the two semiconductor devices 10 may be equal to, for example, the outer diameter of the electric motor 1 or less than the outer diameter of the electric motor 1. There may be.
- the shaft portion 11a of the screw 11 is inserted between the first notch portion 14A and the second notch portion 14B of the two semiconductor devices 10, and the shaft portion 11a of each screw 11 is the base. It is tightened into the corresponding screw hole on the part 1A. As a result, the edges of the first notches 14A and the edges of the second notches 14B of the two semiconductor devices 10 are pressed against the base 1A by the common screw 11 and fixed. Before and after this, the shaft portion 11a of the screw 11 is inserted into the outer peripheral cutout portions 15A and 15B of each semiconductor device 10, and the shaft portion 11a of each screw 11 is tightened into the corresponding screw hole on the base portion 1A. It is.
- the edges of the outer peripheral cutout portions 15A and 15B of the two semiconductor devices 10 are pressed against the base portion 1A by the screws 11 and fixed.
- the two semiconductor devices 10 are fixed to the base portion 1A by four screws 11 disposed between them and a total of four screws 11 disposed on each outer peripheral surface 13o.
- the first notch portion 14A and the second notch portion 14A are formed on the first end surface 13e-1 and the second end surface 13e-2 of the device body 13, respectively.
- a notch 14B is formed.
- the semiconductor device 10 in a state where the device main bodies 13 of the two semiconductor devices 10 are arranged in an annular shape, between the notch portions facing each other (between the first notch portions 14A). Since the common screw 11 can be inserted into each of the second notch portions 14B), the two semiconductor devices 10 can be positioned relative to each other with reference to the common screw 11 fixed to the base portion 1A. The first cutout portion 14A and the second cutout portion 14B abut on the shaft portion 11a of the screw 11 mainly at the curved portion b.
- the notch portions 14 ⁇ / b> B are arranged so as to be equidistant from the center of curvature of the apparatus main body 13. For this reason, two semiconductor devices 10 having the same shape can be attached to the base portion 1 ⁇ / b> A using the common screw 11.
- the notch portions (the first notch portion 14A and the first notch portion 14A) are formed on the first end surface 13e-1 and the second end surface 13e-2 of the device body 13.
- 2 notches 14B) are formed in a portion adjacent to the outer peripheral surface 13o of the apparatus main body 13 and a portion adjacent to the inner peripheral surface 13i.
- notches are provided in a portion adjacent to the outer peripheral surface 13o and a portion adjacent to the inner peripheral surface 13i of the first end surface 13e-1 and the second end surface 13e-2 of the apparatus body 13.
- a cutout portion may be provided only in one of the portion adjacent to the outer peripheral surface 13o and the portion adjacent to the inner peripheral surface 13i.
- notches are provided in both the portion adjacent to the outer peripheral surface 13o and the portion adjacent to the inner peripheral surface 13i. In such a case, the fastening balance of the apparatus main body 13 becomes good in the radial direction.
- outer peripheral notches 15A and 15B are provided on the outer peripheral surface 13o of the device body 13, and the shaft portion 11a of the screw 11 is provided on these outer peripheral notches 15A and 15B.
- the outer peripheral edge of the apparatus main body 13 is fastened and fixed to the base 1 ⁇ / b> A by the screw 11.
- the device main bodies 13 of the two semiconductor devices 10 face each other and are attached to the base portion 1A, the positions of the device main bodies 13 in the direction away from the first end surface 13e-1 and the second end surface 13e-2.
- the displacement and the lift from the base portion 1A can be restricted, and the fixing balance of the apparatus main body 13 can be increased.
- the device body 13 is formed in a semicircular shape in plan view as in the first embodiment, and the first end surface 13 e of the device body 13 is formed.
- the first notch 14A and the second notch 14B are formed on the first end surface 13e-2, and the outer notches 15A and 15B are formed on the outer surface 13o.
- the first end face 13e-1 and the second end face 13e-2 are connected to the first concave and convex engaging portions 18a that are engaged with each other when the device main bodies 13 of the two semiconductor devices 110 are arranged to face each other.
- a second uneven engagement portion 18b is provided.
- the first concavo-convex engaging portion 18a provided on the first end face 13e-1 is formed in a shape in which the upper half portion in the thickness direction protrudes in the circumferential direction with respect to the lower half portion.
- the first concavo-convex engaging portion 18a is not formed in the first end surface 13e-1 at a portion where the first notch portion 14A and the second notch portion 14B are formed.
- the second concave-convex engaging portion 18b provided on the second end surface 13e-2 is formed in a shape in which the lower half portion in the thickness direction protrudes in the circumferential direction with respect to the upper half portion.
- the second concavo-convex engaging portion 18b is not formed in a portion of the second end surface 13e-2 where the first notch portion 14A and the second notch portion 14B are formed.
- the upper half of the first concave / convex engaging portion 18a of the first end surface 13e-1 of one device main body 13 is connected to the other device main body 13.
- the second end face 13e-2 overlaps the lower half of the second concave-convex engaging portion 18b in the thickness direction (vertical direction).
- the semiconductor device 110 since the basic configuration is the same as that of the first embodiment, the same effect as that of the first embodiment is achieved. Further, according to the semiconductor device 110 according to the present embodiment, the first uneven surface engaging portion 18a is provided on the first end surface 13e-1, and the second uneven surface engaging portion is provided on the second end surface 13e-2. 18b is provided. For this reason, when the device main bodies 13 of the two semiconductor devices 110 are disposed to face each other, the first concavo-convex engaging portion 18a and the second concavo-convex engaging portion 18b can be engaged with each other. Thereby, the position shift of one semiconductor device 110 and the other semiconductor device 110 can be prevented.
- the device main body 213 is formed in a semicircular shape in plan view as in the first and second embodiments.
- Each of the end face 213e-1 and the second end face 213e-2 is provided with one notch 214.
- the notch 214 is formed in a semicircular shape in plan view at each radial center of the first end surface 213e-1 and the second end surface 213e-2.
- the two device main bodies 213 When the two device main bodies 213 are attached to the base portion so as to oppose each other so that the device main bodies 213 of the two semiconductor devices 210 form a ring shape as a whole, as with the first embodiment, Two notches 214 of the other semiconductor device 210 may be opposed to each other, and a shaft portion of a fastening screw may be inserted between the notches 214 facing each other.
- one outer circumferential notch 15 is formed at the center position in the circumferential direction of the outer circumferential surface 13 o of the apparatus main body 213.
- the outer circumferential notch 15 is formed to be recessed in a U shape toward the radially inner side.
- a shaft portion of a fastening screw is inserted into the outer peripheral notch portion 15.
- the semiconductor device 210 according to the present embodiment has the same basic effects as the first embodiment because the basic configuration is the same as that of the first embodiment. Further, according to the semiconductor device 210 according to the present embodiment, the notch 214 is provided at the center of each of the first end surface 213e-1 and the second end surface 213e-2 of the device body 213, and the outer periphery of the device body 213 is One outer peripheral notch 15 is provided at the center of the surface 13o. For this reason, when two semiconductor devices 210 are opposed to each other and attached to the base portion, the two semiconductor devices 210 can be fastened and fixed only by a total of four screws. Therefore, by using the semiconductor device 210 according to the present embodiment, it is possible to reduce the number of parts and the number of attachment work steps, and further reduce the manufacturing cost.
- the semiconductor device 310 has the same basic structure as that of the third embodiment.
- the ground conductor 20 is provided on the upper surface side periphery of the notch 214 formed in the first end surface 213e-1 and the second end surface 213e-2 in the upper surface of the apparatus main body 213.
- the ground conductor 20 is connected to, for example, a low voltage part of a control circuit inside the semiconductor device 310.
- the shaft portion 11a of the screw 11 is inserted between the notched portions 214 of the two semiconductor devices 310 as in the third embodiment. Then, the two semiconductor devices 310 are fastened and fixed to the base portion 1A by tightening the screws 11.
- the screw 11 is made of a conductive metal.
- the head portion 11b of the screw 11 contacts the ground conductor 20 at the periphery of the notch 214, while the shaft portion 11a of the screw 11 is tightened to the metal portion of the base portion. It is. As a result, the control circuit inside the semiconductor device 310 is grounded to the base portion 1A.
- the semiconductor device 310 according to the present embodiment can obtain the same effects as those of the third embodiment, and can easily ground the internal circuit using the screw 11.
- the configuration of the semiconductor device 310 according to the fourth embodiment described here can be applied to the semiconductor devices 10 and 110 according to the first and second embodiments described above.
- the outer peripheral surface and the inner peripheral surface of the device body of the semiconductor device are formed in an arc shape, but either the outer peripheral surface or the inner peripheral surface of the device body or both are It may be polygonal or elliptical.
- the position where the notch formed on the first end surface of the apparatus main body and the notch formed on the second end surface are at equal distances from the arc center of the apparatus main body.
- the position of the notch formed on the first end face and the notch formed on the second end face The relationship is arbitrary.
- the device main body is formed so that the inner peripheral surface and the outer peripheral surface are concentric with each other in plan view, but when two device main bodies that are plane-symmetric with each other in plan view are used.
- the inner peripheral surface and the outer peripheral surface of the apparatus main body may be eccentric from each other.
- Base portion 10 110, 210, 310 Semiconductor device 11 Screw 13 Device body 13e-1, 213e-1 First end surface 13e-2, 213e-2 Second end surface 14A First notch (notch ) 14B Second notch (notch) 15 outer periphery notch 18a 1st uneven
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- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Steering Mechanism (AREA)
- Inverter Devices (AREA)
Abstract
Description
例えば特許文献1には、平面視台形状に形成された複数の半導体装置を、円柱状に形成された電動モータ(ベース部)に対して個別に取り付けると共に、円環状に配列する構成が記載されている。
また、上記のように二つの半導体装置を配置した状態で、二つの装置本体の互いに向かい合う切欠き部に共通のネジを挿入できるため、共通のネジを基準として二つの半導体装置を相互に位置決めすることもできる。
以下、図1~図3を参照して本発明の第一実施形態について説明する。
本実施形態に係る半導体装置10は、車両の電動パワーステアリング装置等で用いられる電動モータ1の制御回路を構成している。この半導体装置10の用途や機能は一例であり、半導体装置10の用途や機能はこれに限るものではない。
なお、以下では説明の便宜上、電動モータ1の軸方向のうちの半導体装置10の取り付けられる側を上と呼び、半導体装置10についても軸方向の同側を上と呼ぶものとする。
装置本体13は、平面視で半円環状(半環状)に形成されている。また、装置本体13は、所定の厚みを有する板状に形成されている。装置本体13は、電動モータ1の制御回路を構成する半導体素子や回路基板(いずれも不図示)を、モールド樹脂等の封止材で封止して構成されている。
二つの半導体装置10は、最初に、一方の装置本体13の第1の端面13e-1と他方の装置本体13の第2の端面13e-2を対向させ、かつ一方の装置本体13の第2の端面13e-2と他方の装置本体13の第1の端面13e-1を対向させた状態で、電動モータ1のベース部1A上に円環状に配置される。このとき、二つの半導体装置10の、第1の切欠き部14A同士が互いに対向するとともに、第2の切欠き部14B同士が互いに対向する。また、このとき、各半導体装置10は、第1の切欠き部14Aと第2の切欠き部14Bと外周切欠き部15A,15Bとが、ベース部1A上の対応するネジ穴(不図示)上に位置するように配置される。
なお、本実施形態の場合、二つの半導体装置10を合わせた円環形状部の外径は、例えば、電動モータ1の外径と同等であっても良いし、電動モータ1の外径以下であっても良い。
また、これと前後して各半導体装置10の外周切欠き部15A,15Bにネジ11の軸部11aが挿入され、各ネジ11の軸部11aがベース部1A上の対応するネジ穴に締め込まれる。これにより、二つの半導体装置10の各外周切欠き部15A,15Bの縁部がネジ11によってベース部1Aに押し付けられて固定される。
この結果、二つの半導体装置10は、両者の間に配置される4本のネジ11と、各外周面13oに配置される計4本のネジ11によってベース部1Aに固定される。
なお、本実施形態においては、装置本体13の第1の端面13e-1と第2の端面13e-2の外周面13oに隣接する部分と内周面13iに隣接する部分に切欠き部が設けられているが、外周面13oに隣接する部分と内周面13iに隣接する部分のいずれか一方にのみ切欠き部を設けるようにしても良い。ただし、本実施形態のように第1の端面13e-1、第2の端面13e-2のうち、外周面13oに隣接する部分と内周面13iに隣接する部分の両方に切欠き部を設けるようにした場合には、装置本体13の締結バランスが径方向において良好になる。
次に、本発明の第二実施形態について、図4~図6を参照して第一実施形態との相違点を中心に説明する。なお、第一実施形態と共通する構成については、同一符号を付し、その説明を省略する。また、図4において、接続端子12(図1~図3参照)は省略している。
また、第2の端面13e-2に設けられる第2の凹凸係合部18bは、厚み方向の下半部が上半部に対して周方向に突出する形状に形成されている。第2の凹凸係合部18bは、第2の端面13e-2のうち、第1の切欠き部14A、第2の切欠き部14Bが形成される部位には形成されていない。
また、本実施形態に係る半導体装置110によれば、第1の端面13e-1に第1の凹凸係合部18aが設けられるとともに、第2の端面13e-2に第2の凹凸係合部18bが設けられている。このため、二つの半導体装置110の装置本体13を対向配置するときに、両者の第1の凹凸係合部18aと第2の凹凸係合部18bを相互に係合することができる。これにより、一方の半導体装置110と他方の半導体装置110の位置ずれを防止することができる。特に、本実施形態では、第1の凹凸係合部18aの上半部と第2の凹凸係合部18bの下半部とが厚み方向で重なるため、二つの半導体装置110の厚み方向(上下方向)の位置ずれを防止することができる。したがって、本実施形態に係る半導体装置110を採用した場合には、ベース部1Aに対して二つの半導体装置110を容易に、かつ正確に取り付けることができる。
次に、本発明の第三実施形態について、図7を参照して第一、第二実施形態との相違点を中心に説明する。なお、第一、第二実施形態と共通する構成については、同一符号を付し、その説明を省略する。また、図7において、接続端子12(図1~図3参照)は省略している。
また、装置本体213の外周面13oの周方向の中央位置には一つの外周切欠き部15が形成されている。外周切欠き部15は径方向内側に向かってU字状に窪んで形成されている。外周切欠き部15には締結用のネジの軸部が挿入される。
また、本実施形態に係る半導体装置210によれば、装置本体213の第1の端面213e-1と第2の端面213e-2の各中央に切欠き部214が設けられ、装置本体213の外周面13oの中央に一つの外周切欠き部15が設けられている。このため、二つの半導体装置210を相互に対向させてベース部に取り付けるときに、合計4本のネジのみによって二つの半導体装置210を締結固定することができる。したがって、本実施形態に係る半導体装置210を用いることにより、部品点数と取付作業工数を削減して、さらになる製造コストの削減を図ることができる。
次に、本発明の第四実施形態について、図8,図9を参照して第三実施形態との相違点を中心に説明する。なお、第三実施形態と共通する構成については、同一符号を付し、その説明を省略する。
例えば、上記の各実施形態においては、半導体装置の装置本体の外周面と内周面が円弧状に形成されているが、装置本体の外周面と内周面のいずれか一方、若しくは、両方が多角形状や楕円形状であっても良い。
さらに、上記の各実施形態では、平面視で内周面と外周面が互いに同心になるように装置本体が形成されているが、平面視で互いに面対称となる二つの装置本体を用いる場合には、装置本体の内周面と外周面とは互い偏心しても良い。
10,110,210,310 半導体装置
11 ネジ
13 装置本体
13e-1,213e-1 第1の端面
13e-2,213e-2 第2の端面
14A 第1の切欠き部(切欠き部)
14B 第2の切欠き部(切欠き部)
15 外周切欠き部
18a 第1の凹凸係合部(凹凸係合部)
18b 第2の凹凸係合部(凹凸係合部)
20 アース導体
214 切欠き部
Claims (7)
- 平面視で弧状に形成された内周面と平面視で弧状に形成された外周面とを有する半環状の装置本体を備え、
前記装置本体の周方向の一端側の第1の端面と他端側の第2の端面とに、前記装置本体をベース部に固定するためのネジが挿入される切欠き部が形成されている、半導体装置。 - 前記内周面と前記外周面とが平面視で互いに同心の弧状に形成され、
前記第1の端面の前記切欠き部と前記第2の端面の前記切欠き部とは、前記装置本体の弧中心から互いに等しい距離となる位置に配置されている、請求項1に記載の半導体装置。 - 前記第1の端面の前記切欠き部と前記第2の端面の前記切欠き部とは、前記外周面に隣接する部分及び前記内周面に隣接する部分の少なくともいずれか一方に形成されている、請求項1または請求項2に記載の半導体装置。
- 前記装置本体の外周面には、前記装置本体を前記ベース部に固定するためのネジが挿入される外周切欠き部が形成されている、請求項1から請求項3のいずれか1項に記載の半導体装置。
- 前記装置本体の前記第1の端面と前記第2の端面には凹凸係合部が設けられている、請求項1から請求項4のいずれか1項に記載の半導体装置。
- 前記装置本体の前記切欠き部の縁部にアース導体が設けられ、
導電性を有する前記ネジが、前記アース導体に接触するように前記切欠き部に挿入される、請求項1から請求項5のいずれか1項に記載の半導体装置。 - 請求項1~請求項6のいずれか1項に記載の半導体装置を二つ用意し、
二つの前記装置本体が、全体で環状をなすように、二つの前記半導体装置を前記ベース部上に配置し、
前記二つの半導体装置の互いに対向する前記切欠き部に前記ネジを挿入し、前記ネジを前記ベース部に締め込む、半導体装置の実装方法。
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US5737210A (en) * | 1996-04-30 | 1998-04-07 | Magnetek, Inc. | Bridge rectifier configuration and mounting for supplying exciter current in an AC generator |
DE19705228A1 (de) * | 1997-02-12 | 1998-08-13 | Bosch Gmbh Robert | Elektrische Maschine, vorzugsweise Drehstromgenerator mit Gleichrichter-Baueinheit |
US5838544A (en) * | 1997-05-13 | 1998-11-17 | Mobiletron Electronics Co., Ltd. | Heat dissipating structure for rectifiers of car alternators |
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DE102008064161B4 (de) * | 2008-12-19 | 2013-09-19 | Bühler Motor GmbH | Elektronisch kommutierter Gleichstrommotor für eine Flüssigkeitspumpe |
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JPS5961090A (ja) * | 1982-09-29 | 1984-04-07 | 富士通株式会社 | プリント板の実装方法 |
JP2013188027A (ja) * | 2012-03-08 | 2013-09-19 | Nissan Motor Co Ltd | インバータモジュール |
JP2014183615A (ja) * | 2013-03-18 | 2014-09-29 | Denso Corp | 回転電機 |
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US20180138788A1 (en) | 2018-05-17 |
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